CN111624854A - Photosensitive semiconductor device - Google Patents
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- CN111624854A CN111624854A CN202010286343.4A CN202010286343A CN111624854A CN 111624854 A CN111624854 A CN 111624854A CN 202010286343 A CN202010286343 A CN 202010286343A CN 111624854 A CN111624854 A CN 111624854A
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- polyimide resin
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- photosensitive polyimide
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 229920001721 polyimide Polymers 0.000 claims abstract description 37
- 239000009719 polyimide resin Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 13
- NDMUQNOYNAWAAL-UHFFFAOYSA-N 3-diazo-1,4-dioxonaphthalene-2-sulfonic acid Chemical class C1=CC=C2C(=O)C(=[N+]=[N-])C(S(=O)(=O)O)C(=O)C2=C1 NDMUQNOYNAWAAL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 11
- -1 modified diazonaphthoquinone sulfonate ester Chemical class 0.000 claims abstract description 8
- PURRFFFGAKFXOB-UHFFFAOYSA-M [Na+].FC(COCC(C1=CC=CC=C1)OC(C1=CC=CC=C1)=O)(S(=O)(=O)[O-])F Chemical compound [Na+].FC(COCC(C1=CC=CC=C1)OC(C1=CC=CC=C1)=O)(S(=O)(=O)[O-])F PURRFFFGAKFXOB-UHFFFAOYSA-M 0.000 claims abstract description 7
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 claims abstract description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 claims description 6
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000000376 reactant Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 229940126062 Compound A Drugs 0.000 claims description 5
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- LZKVGVXWGQWLAI-UHFFFAOYSA-M sodium;1,1-difluoro-2-hydroxyethanesulfonate Chemical compound [Na+].OCC(F)(F)S([O-])(=O)=O LZKVGVXWGQWLAI-UHFFFAOYSA-M 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 239000007810 chemical reaction solvent Substances 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- 239000012065 filter cake Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000009471 action Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract description 2
- 230000003321 amplification Effects 0.000 abstract description 2
- 150000001768 cations Chemical class 0.000 abstract description 2
- 238000004090 dissolution Methods 0.000 abstract description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 2
- 239000003112 inhibitor Substances 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 230000036211 photosensitivity Effects 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- MMUMFYKJVCNQOL-UHFFFAOYSA-N 1,1-difluoro-2-hydroxyethanesulfonic acid Chemical compound OCC(F)(F)S(O)(=O)=O MMUMFYKJVCNQOL-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
Abstract
The invention provides a photosensitive semiconductor device which comprises a substrate and a composition coated on the substrate and containing positive photosensitive polyimide resin, wherein the composition containing the positive photosensitive polyimide resin comprises 75-85% of the positive photosensitive polyimide resin and the balance of modified diazonaphthoquinone sulfonate. The photosensitive semiconductor device provided by the invention adopts positive photosensitive polyimide resin and modified diazonaphthoquinone sulfonate ester to coat on a substrate, the modified diazonaphthoquinone sulfonate ester releases 2,1, 4-diazonaphthoquinone sulfonyl chloride and benzoic acid 2- (2, 2-difluoro-2-sulfoethoxy) -1-phenylethyl ester sodium salt after illumination, the 2,1, 4-diazonaphthoquinone sulfonyl chloride forms indene acid substances under the action of light, loses the action of a dissolution inhibitor on polyimide resin with good hydroxyl-containing solubility, therefore, a positive image can be formed, and the benzoic acid 2- (2, 2-difluoro-2-sulfoethoxy) -1-phenylethyl ester sodium salt as a chemical amplification type material generates cations under the action of light, so that the photosensitivity of the material is greatly improved.
Description
Technical Field
The invention belongs to the technical field of electricity, and particularly relates to a photosensitive semiconductor device.
Background
The high molecular material with the double functions of heat resistance and light sensitivity has important application in many aspects such as the microelectronic field. Polyimide, which is an insulating material, is undoubtedly the mainstream of molecular design of current heat-resistant photosensitive polymers if it can simultaneously have photosensitive properties. The photosensitive polyimide material with the ability to be directly lithographically patterned into fine patterns would allow the entire complex microfabrication process to be simplified.
Because of the excellent properties and development potential of photosensitive polyimides, more and more scientists have actively researched and explored many new preparation methods to obtain a series of practical photosensitive polyimides. Meanwhile, photosensitive polyimides are classified into two major categories, positive and negative, according to the properties of images after photolithography. Positive-working photosensitive polyimides are those in which the exposed areas become soluble and are washed away during development, leaving an image in the unexposed areas.
With the miniaturization of various electronic products and the popularization and spread of portable devices such as smart phones and tablet terminals in recent years, flexible printed circuit boards are developing in the direction of ultra-thin and ultra-dense and the upgrading of large-scale integrated circuits is accelerating, and meanwhile, higher requirements are put forward on the performance of photosensitive polyimide. Such as polyimide, which is required to have excellent heat resistance, a low thermal expansion coefficient, a high glass transition temperature (Tg), high tensile strength and elastic modulus, a low dielectric constant, and the like.
However, the performance of the positive photosensitive polyimides is not currently able to meet the increasingly high requirements.
Disclosure of Invention
The technical problem is as follows: to address the deficiencies of the prior art, the present invention provides a photosensitive semiconductor device.
The technical scheme is as follows: the invention provides a photosensitive semiconductor device, which comprises a substrate and a composition coated on the substrate and containing positive photosensitive polyimide resin, wherein the composition containing the positive photosensitive polyimide resin comprises 75-85% of the positive photosensitive polyimide resin and the balance of modified diazonaphthoquinone sulfonate (DNQ);
the positive photosensitive polyimide resin has a structural formula as follows:
the structural formula of the modified diazonaphthoquinone sulfonate is as follows:
preferably, the method for preparing the positive photosensitive polyimide resin comprises the following steps:
(1) adding a compound A into a DMAc solvent at room temperature, stirring, adding a compound B, and reacting to generate a viscous solution;
(2) treating the viscous solution obtained in the step (1) by a thermal imidization method to obtain positive photosensitive polyimide resin;
the reaction formula is as follows:
preferably, in step (1), the molar ratio of compound a to compound B is 1: 1.
Preferably, the preparation method of the modified diazonaphthoquinone sulfonate comprises the following steps:
(1) in dichloroethane solvent, 1, 1-difluoro-2-hydroxyethanesulfonic acid sodium salt and 2-phenyl oxirane are stirred and reacted at normal temperature, sulfuric acid with the weight of 1-3% of that of reactants is slowly dripped, and the mixture is stirred and reacted for 1-3h after dripping; after the reaction is finished, removing the reaction solvent, preparing the residue into slurry by using ether, filtering, washing a filter cake by using distilled water and ether, and drying in vacuum to obtain a compound C;
(2) in a dichloroethane solvent, a compound C, namely 2- (2, 2-difluoro-2-sulfoethoxy) -1-phenylethyl benzoate sodium salt and 2,1, 4-diazo naphthoquinone sulfonyl chloride are stirred and reacted at normal temperature, triethylamine accounting for 1-3% of the weight of reactants is slowly dripped, and the modified diazo naphthoquinone sulfonate is obtained after stirring and mixing for 1-3 h;
the reaction formula is as follows:
preferably, the molar ratio of 1, 1-difluoro-2-hydroxyethanesulfonic acid sodium salt to 2-phenyl oxirane is 1:1, and the molar ratio of compound C to 2,1, 4-diazonaphthoquinone sulfonyl chloride is 1: 1.
Preferably, the preparation method of the photosensitive semiconductor device comprises the following steps:
(1) coating a positive photosensitive polyimide resin on a substrate and drying to form a coating film;
(2) irradiating the formed coating film with light to expose it;
(3) removing unexposed portions other than the exposed portions with a developer to obtain a pattern resin film;
(4) and heat-treating the pattern resin film.
Has the advantages that: the photosensitive semiconductor device provided by the invention adopts positive photosensitive polyimide resin and modified diazonaphthoquinone sulfonate ester to coat on a substrate, on one hand, 2,1, 4-diazonaphthoquinone sulfonyl chloride and C benzoic acid 2- (2, 2-difluoro-2-sulfoethoxy) -1-phenylethyl ester sodium salt are released after the modified diazonaphthoquinone sulfonate ester is illuminated, and the 2,1, 4-diazonaphthoquinone sulfonyl chloride forms indene acid substances under the action of light, so that the action of a dissolution inhibitor on polyimide resin with good hydroxyl-containing solubility is lost, therefore, a positive image can be formed, and on the other hand, the C benzoic acid 2- (2, 2-difluoro-2-sulfoethoxy) -1-phenylethyl ester sodium salt as a chemical amplification type material generates cations under the action of light, so that the photosensitivity of the material is greatly improved.
Drawings
FIG. 1 is a hydrogen spectrum of modified diazonaphthoquinone sulfonate.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A photosensitive semiconductor device comprising a substrate and a composition containing a positive photosensitive polyimide resin coated on the substrate, wherein the composition containing the positive photosensitive polyimide resin comprises 75-85% of the positive photosensitive polyimide resin and the balance of modified diazonaphthoquinone sulfonate (DNQ);
the positive photosensitive polyimide resin has a structural formula as follows:
the structural formula of the modified diazonaphthoquinone sulfonate is as follows:
the preparation method comprises the following steps:
(1) preparation of positive photosensitive polyimide resin:
(1.1) adding a compound A into a DMAc solvent at room temperature, stirring, adding a compound B, and reacting to generate a viscous solution; the molar ratio of the compound A to the compound B is 1: 1;
(1.2) treating the viscous solution obtained in the step (1.1) by a thermal imidization method to obtain positive photosensitive polyimide resin;
the reaction formula is as follows:
the number average molecular weight was 572, the weight average molecular weight was 658, and the molecular weight distribution index was 1.359.
Testing the performance of the alloy:
| examples | COMPARATIVE EXAMPLE (Pi) | |
| Dielectric constant | 2.27 | 3.4 |
| Dielectric loss | 0.0012 | 0.0028 |
| Thermal cracking temperature C | 541 | 452 |
| Coefficient of thermal expansion ppm/. degree.C | 24.8 | 51.6 |
| Tensile strength MPa | 267 | 186 |
| Elongation% | 26.5 | 20.4 |
| Elastic modulus GPa | 1.9 | 4.5 |
| Peel strength kgf/cm | 1.25 | 1.09 |
| Flame-retardant VTM-0 | ○ | ○ |
(2) Preparation of modified diazonaphthoquinone sulfonate:
(2.1) in a dichloroethane solvent, stirring 1, 1-difluoro-2-hydroxyethanesulfonic acid sodium salt and 2-phenyl oxirane at normal temperature for reaction, slowly dropwise adding sulfuric acid accounting for 1-3% of the weight of reactants, and stirring and mixing for reaction for 1-3h after dropwise adding; after the reaction is finished, removing the reaction solvent, preparing the residue into slurry by using ether, filtering, washing a filter cake by using distilled water and ether, and drying in vacuum to obtain a compound C; the molar ratio of the sodium salt of 1, 1-difluoro-2-hydroxyethanesulfonic acid to 2-phenyloxirane is 1: 1;
(2.2) in a dichloroethane solvent, reacting a compound C, namely 2- (2, 2-difluoro-2-sulfoethoxy) -1-phenylethyl benzoate sodium salt with 2,1, 4-diazo naphthoquinone sulfonyl chloride under stirring at normal temperature, slowly dropwise adding triethylamine accounting for 1-3% of the weight of a reactant, and reacting for 1-3h after dropwise adding, stirring and mixing to obtain modified diazo naphthoquinone sulfonate; the molar ratio of the compound C to the 2,1, 4-diazonaphthoquinone sulfonyl chloride is 1: 1;
modified diazonaphthoquinone sulfonate ester: m/z: 513.02, respectively; the hydrogen spectrum is shown in FIG. 1.
The reaction formula is as follows:
(3) the preparation method of the photosensitive semiconductor device comprises the following steps:
(3.1) coating a positive photosensitive polyimide resin on a substrate and drying to form a coating film;
(3.2) irradiating the formed coating film with light to expose it;
(3.3) removing unexposed portions other than the exposed portions with a developer to obtain a pattern resin film;
(3.4) heat-treating the pattern resin film.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (6)
1. A photosensitive semiconductor device, characterized in that: the composition comprises a substrate and a positive photosensitive polyimide resin-containing composition coated on the substrate, wherein the positive photosensitive polyimide resin-containing composition comprises 75-85% of positive photosensitive polyimide resin and the balance of modified diazonaphthoquinone sulfonate (DNQ);
the positive photosensitive polyimide resin has a structural formula as follows:
the structural formula of the modified diazonaphthoquinone sulfonate is as follows:
2. a photosensitive semiconductor device according to claim 1, wherein: the preparation method of the positive photosensitive polyimide resin comprises the following steps:
(1) adding a compound A into a DMAc solvent at room temperature, stirring, adding a compound B, and reacting to generate a viscous solution;
(2) treating the viscous solution obtained in the step (1) by a thermal imidization method to obtain positive photosensitive polyimide resin;
the reaction formula is as follows:
3. a photosensitive semiconductor device according to claim 2, wherein: in the step (1), the molar ratio of the compound A to the compound B is 1: 1.
4. A photosensitive semiconductor device according to claim 1, wherein: the preparation method of the modified diazonaphthoquinone sulfonate comprises the following steps:
(1) in dichloroethane solvent, 1, 1-difluoro-2-hydroxyethanesulfonic acid sodium salt and 2-phenyl oxirane are stirred and reacted at normal temperature, sulfuric acid with the weight of 1-3% of that of reactants is slowly dripped, and the mixture is stirred and reacted for 1-3h after dripping; after the reaction is finished, removing the reaction solvent, preparing the residue into slurry by using ether, filtering, washing a filter cake by using distilled water and ether, and drying in vacuum to obtain a compound C;
(2) in a dichloroethane solvent, a compound C, namely 2- (2, 2-difluoro-2-sulfoethoxy) -1-phenylethyl benzoate sodium salt and 2,1, 4-diazo naphthoquinone sulfonyl chloride are stirred and reacted at normal temperature, triethylamine accounting for 1-3% of the weight of reactants is slowly dripped, and the modified diazo naphthoquinone sulfonate is obtained after stirring and mixing for 1-3 h;
the reaction formula is as follows:
5. a photosensitive semiconductor device according to claim 1, wherein: the molar ratio of the 1, 1-difluoro-2-hydroxyethanesulfonic acid sodium salt to the 2-phenyl oxirane is 1:1, and the molar ratio of the compound C to the 2,1, 4-diazonaphthoquinone sulfonyl chloride is 1: 1.
6. A photosensitive semiconductor device according to claim 1, wherein: the preparation method of the photosensitive semiconductor device comprises the following steps:
(1) coating a positive photosensitive polyimide resin on a substrate and drying to form a coating film;
(2) irradiating the formed coating film with light to expose it;
(3) removing unexposed portions other than the exposed portions with a developer to obtain a pattern resin film;
(4) and heat-treating the pattern resin film.
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|---|---|---|---|
| CN202010286343.4A CN111624854A (en) | 2020-04-13 | 2020-04-13 | Photosensitive semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010286343.4A CN111624854A (en) | 2020-04-13 | 2020-04-13 | Photosensitive semiconductor device |
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