CN111613533A - 制作非对称低中压器件的方法及非对称低中压器件 - Google Patents
制作非对称低中压器件的方法及非对称低中压器件 Download PDFInfo
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- CN111613533A CN111613533A CN201910142611.2A CN201910142611A CN111613533A CN 111613533 A CN111613533 A CN 111613533A CN 201910142611 A CN201910142611 A CN 201910142611A CN 111613533 A CN111613533 A CN 111613533A
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 150000002500 ions Chemical class 0.000 claims abstract description 19
- -1 boron ions Chemical class 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910142611.2A CN111613533B (zh) | 2019-02-26 | 2019-02-26 | 制作非对称低中压器件的方法及非对称低中压器件 |
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CN201910142611.2A CN111613533B (zh) | 2019-02-26 | 2019-02-26 | 制作非对称低中压器件的方法及非对称低中压器件 |
Publications (2)
Publication Number | Publication Date |
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CN111613533A true CN111613533A (zh) | 2020-09-01 |
CN111613533B CN111613533B (zh) | 2024-04-30 |
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CN201910142611.2A Active CN111613533B (zh) | 2019-02-26 | 2019-02-26 | 制作非对称低中压器件的方法及非对称低中压器件 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112382655A (zh) * | 2020-11-12 | 2021-02-19 | 中国科学院半导体研究所 | 一种宽禁带功率半导体器件及制备方法 |
Citations (15)
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US5510279A (en) * | 1995-01-06 | 1996-04-23 | United Microelectronics Corp. | Method of fabricating an asymmetric lightly doped drain transistor device |
US20010013628A1 (en) * | 1999-05-03 | 2001-08-16 | Sunit Tyagi | Asymmetric mosfet devices |
WO2003017349A2 (de) * | 2001-08-17 | 2003-02-27 | IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik | Dmos-transistor |
US20030073313A1 (en) * | 2001-10-12 | 2003-04-17 | Pendharkar Sameer P. | Low leakage power transistor and method of forming |
US20050006701A1 (en) * | 2003-07-07 | 2005-01-13 | Tzu-Chiang Sung | High voltage metal-oxide semiconductor device |
US20060145250A1 (en) * | 2005-01-06 | 2006-07-06 | Infineon Technologies North America Corp. | LDMOS transistor |
CN101484985A (zh) * | 2005-07-25 | 2009-07-15 | 飞思卡尔半导体公司 | 半导体器件及其制造方法 |
CN101609841A (zh) * | 2008-06-18 | 2009-12-23 | 中芯国际集成电路制造(上海)有限公司 | 一种金属氧化物半导体(mos)晶体管结构及其制造方法 |
CN201898135U (zh) * | 2009-05-28 | 2011-07-13 | 成都芯源***有限公司 | 一种mosfet器件 |
CN102760734A (zh) * | 2011-04-27 | 2012-10-31 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN103325834A (zh) * | 2013-05-02 | 2013-09-25 | 上海华力微电子有限公司 | 晶体管及其沟道长度的形成方法 |
CN103956384A (zh) * | 2014-04-29 | 2014-07-30 | 无锡中星微电子有限公司 | 一种高压pmos晶体管及其制备方法 |
US20150129959A1 (en) * | 2013-11-13 | 2015-05-14 | Magnachip Semiconductor, Ltd. | Semiconductor device and manufacturing method thereof |
US20180240913A1 (en) * | 2017-02-23 | 2018-08-23 | Macronix International Co., Ltd. | Semiconductor device and method of manufacturing the same |
KR20180110703A (ko) * | 2017-03-29 | 2018-10-11 | 매그나칩 반도체 유한회사 | 낮은 소스-드레인 저항을 갖는 반도체 소자 구조 및 그 제조 방법 |
-
2019
- 2019-02-26 CN CN201910142611.2A patent/CN111613533B/zh active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5510279A (en) * | 1995-01-06 | 1996-04-23 | United Microelectronics Corp. | Method of fabricating an asymmetric lightly doped drain transistor device |
US20010013628A1 (en) * | 1999-05-03 | 2001-08-16 | Sunit Tyagi | Asymmetric mosfet devices |
WO2003017349A2 (de) * | 2001-08-17 | 2003-02-27 | IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik | Dmos-transistor |
US20030073313A1 (en) * | 2001-10-12 | 2003-04-17 | Pendharkar Sameer P. | Low leakage power transistor and method of forming |
US20050006701A1 (en) * | 2003-07-07 | 2005-01-13 | Tzu-Chiang Sung | High voltage metal-oxide semiconductor device |
US20060145250A1 (en) * | 2005-01-06 | 2006-07-06 | Infineon Technologies North America Corp. | LDMOS transistor |
CN101484985A (zh) * | 2005-07-25 | 2009-07-15 | 飞思卡尔半导体公司 | 半导体器件及其制造方法 |
CN101609841A (zh) * | 2008-06-18 | 2009-12-23 | 中芯国际集成电路制造(上海)有限公司 | 一种金属氧化物半导体(mos)晶体管结构及其制造方法 |
CN201898135U (zh) * | 2009-05-28 | 2011-07-13 | 成都芯源***有限公司 | 一种mosfet器件 |
CN102760734A (zh) * | 2011-04-27 | 2012-10-31 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
CN103325834A (zh) * | 2013-05-02 | 2013-09-25 | 上海华力微电子有限公司 | 晶体管及其沟道长度的形成方法 |
US20150129959A1 (en) * | 2013-11-13 | 2015-05-14 | Magnachip Semiconductor, Ltd. | Semiconductor device and manufacturing method thereof |
CN103956384A (zh) * | 2014-04-29 | 2014-07-30 | 无锡中星微电子有限公司 | 一种高压pmos晶体管及其制备方法 |
US20180240913A1 (en) * | 2017-02-23 | 2018-08-23 | Macronix International Co., Ltd. | Semiconductor device and method of manufacturing the same |
KR20180110703A (ko) * | 2017-03-29 | 2018-10-11 | 매그나칩 반도체 유한회사 | 낮은 소스-드레인 저항을 갖는 반도체 소자 구조 및 그 제조 방법 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112382655A (zh) * | 2020-11-12 | 2021-02-19 | 中国科学院半导体研究所 | 一种宽禁带功率半导体器件及制备方法 |
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CN111613533B (zh) | 2024-04-30 |
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Address after: No.385, Hongcao Road, Xuhui District, Shanghai 200233 Applicant after: SHANGHAI ADVANCED SEMICONDUCTO Address before: No.385, Hongcao Road, Xuhui District, Shanghai 200233 Applicant before: ADVANCED SEMICONDUCTOR MANUFACTURING Co.,Ltd. |
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Effective date of registration: 20211110 Address after: 201306 No. 600, Yunshui Road, Lingang xinpian District, pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: GTA Semiconductor Co.,Ltd. Address before: 200233 No. 385, Hongcao Road, Xuhui District, Shanghai Applicant before: SHANGHAI ADVANCED SEMICONDUCTO |
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