CN111584592B - Display panel and preparation method thereof - Google Patents

Display panel and preparation method thereof Download PDF

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Publication number
CN111584592B
CN111584592B CN202010441698.6A CN202010441698A CN111584592B CN 111584592 B CN111584592 B CN 111584592B CN 202010441698 A CN202010441698 A CN 202010441698A CN 111584592 B CN111584592 B CN 111584592B
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layer
light
base plate
substrate base
orthographic projection
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CN111584592A (en
Inventor
舒适
王雷
徐传祥
岳阳
李翔
姚琪
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN202010441698.6A priority Critical patent/CN111584592B/en
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Priority to PCT/CN2021/094886 priority patent/WO2021233380A1/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to the technical field of display, and provides a display panel and a preparation method thereof. The display panel comprises a back plate, a packaging structure, a phase retarder, a linear polarizer and a color film layer; the backboard comprises a substrate, a photoelectric sensing structure and a light-emitting structure, wherein the photoelectric sensing structure and the light-emitting structure are arranged on the substrate; the packaging structure is arranged on one surface of the photoelectric sensing structure and the light-emitting structure, which is far away from the substrate; the phase delay sheet is arranged on one surface of the packaging structure far away from the back plate; the linear polaroid is arranged on one surface of the phase delay sheet, which is far away from the back plate; the color film layer is arranged on one surface of the linear polaroid, which is far away from the back plate, and comprises a plurality of color resistance areas, and the orthographic projection of the color resistance areas on the back plate is superposed with the orthographic projection of the light-emitting layer on the back plate; the phase delay plate is at least positioned among the color resistance areas and at least fills the gaps among the color resistance areas; the orthographic projection of the linear polaroid on the back plate is superposed with the orthographic projection of the phase retarder on the back plate.

Description

Display panel and preparation method thereof
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a preparation method of the display panel.
Background
The most prominent feature of current OLED panels over LCDs is an all-solid-state display (no liquid crystal), with significant advantages in bending and even folding capabilities.
In order to improve the bending performance of the OLED product, the thickness of the module needs to be continuously reduced. In order to solve the problem, people adopt a method of integrating a Touch structure on a packaging layer (TOT/Touch on TFE) and integrating a color film layer on the packaging layer (COE/CF on Encapsulation), so that the thickness of the module is greatly reduced; however, this method has a drawback that fingerprint recognition cannot be performed.
The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned disadvantage that fingerprint identification cannot be performed in the prior art, and provides a display panel capable of performing fingerprint identification and a method for manufacturing the display panel.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
According to an aspect of the present disclosure, there is provided a display panel including:
The back plate comprises a substrate base plate, a photoelectric sensing structure and a light-emitting structure, wherein the photoelectric sensing structure and the light-emitting structure are arranged on the substrate base plate;
the packaging structure is arranged on one surfaces, far away from the substrate, of the photoelectric sensing structure and the light-emitting structure;
the phase delay piece is arranged on one surface of the packaging structure far away from the back plate;
the linear polaroid is arranged on one surface of the phase retarder, which is far away from the back plate;
the color film layer is arranged on one surface of the linear polarizer, which is far away from the back plate, and comprises a plurality of color resistance areas, and the orthographic projection of the color resistance areas on the back plate is superposed with the orthographic projection of the light-emitting layer on the back plate;
the phase delay plate is at least positioned among the color resistance areas and at least fills gaps among the color resistance areas; and the orthographic projection of the linear polarizer on the back plate is superposed with the orthographic projection of the phase retarder on the back plate.
In one exemplary embodiment of the present disclosure,
the photoelectric sensing structure includes:
the first thin film transistor is arranged on the substrate base plate;
the photoelectric sensing device is arranged on one surface, far away from the substrate base plate, of the first thin film transistor and is electrically connected with the first thin film transistor;
The light emitting structure includes:
the second thin film transistor is arranged on the substrate base plate;
the light-emitting device is arranged on one surface, far away from the substrate base plate, of the second thin film transistor and is electrically connected with the second thin film transistor, and the light-emitting device comprises the light-emitting layer;
the orthographic projection of the photoelectric sensing device on the substrate base plate is not overlapped with the orthographic projection of the light emitting layer on the substrate base plate.
In an exemplary embodiment of the present disclosure, the display panel further includes:
the first protective layer is arranged on one surfaces, far away from the substrate base plate, of the first thin film transistor and the second thin film transistor;
the first planarization layer is arranged on one surface, far away from the substrate, of the first protection layer;
the insulating layer is arranged on one surface, far away from the substrate base plate, of the first planarization layer;
the connecting electrode is arranged on one surface of the insulating layer, which is far away from the substrate base plate;
the photoelectric sensor is arranged on one surface of the insulating layer, which is far away from the substrate base plate;
the second protective layer is arranged on the connection electrode and one surface, far away from the substrate, of the photoelectric sensing device;
And the second planarization layer is arranged on one surface, far away from the substrate base plate, of the second protection layer, and a third through hole is formed in the second planarization layer.
In one exemplary embodiment of the present disclosure, the light emitting device further includes:
the first electrode is arranged on one surface, far away from the substrate, of the second planarization layer;
the first pixel dielectric layer is arranged on one surface, far away from the substrate, of the first electrode, the transmittance of the first pixel dielectric layer for light with the wavelength less than 600nm is higher than that of light with the wavelength more than 600nm, a first through hole is formed in the first pixel dielectric layer and communicated with the first electrode, and the orthographic projection of the photoelectric sensing device on the substrate is at least partially positioned in the orthographic projection of the first pixel dielectric layer on the substrate;
the light-emitting layer is arranged in the first through hole on the first pixel dielectric layer;
and the second electrode is arranged on one surface of the light-emitting layer, which is far away from the substrate base plate.
In an exemplary embodiment of the present disclosure, the light emitting device further includes:
the first electrode is arranged on one surface, far away from the substrate, of the second planarization layer;
The first pixel dielectric layer is arranged on one surface, far away from the substrate, of the first electrode, the transmittance of the pixel dielectric layer for light with the wavelength less than 600nm is higher than that of light with the wavelength more than 600nm, a first through hole is formed in the first pixel dielectric layer and communicated with the first electrode, and the orthographic projection of the photoelectric sensing device on the substrate is at least partially positioned in the orthographic projection of the first pixel dielectric layer on the substrate;
the second pixel dielectric layer is arranged on one surface, far away from the substrate base plate, of the first pixel dielectric layer, the orthographic projection of the first pixel dielectric layer on the substrate base plate is in the orthographic projection of the second pixel dielectric layer on the substrate base plate, a second through hole is formed in the second pixel dielectric layer, and the orthographic projection of the second through hole on the substrate base plate is in the orthographic projection of the first through hole on the substrate base plate;
the light-emitting layer is arranged in the second through hole on the second pixel dielectric layer;
and the second electrode is arranged on one surface of the light-emitting layer, which is far away from the substrate base plate.
In an exemplary embodiment of the present disclosure, the display panel further includes:
The third pixel dielectric layer is arranged on one surface of the linear polarizer, which is far away from the substrate base plate, and the transmittance of the third pixel dielectric layer to the light with the wavelength less than 600nm is higher than that of the light with the wavelength more than 600 nm; the orthographic projection of the third pixel dielectric layer on the substrate base plate is coincident with the orthographic projection of the phase retarder on the substrate base plate, and the orthographic projection of the photoelectric sensing device on the substrate base plate is at least partially positioned in the orthographic projection of the third pixel dielectric layer on the substrate base plate.
In one exemplary embodiment of the present disclosure, the photosensor device includes:
the third electrode is arranged on one surface, far away from the substrate base plate, of the insulating layer and is electrically connected with the first thin film transistor;
the photoelectric conversion layer is arranged on one surface, far away from the substrate, of the third electrode;
and the fourth electrode is arranged on one surface of the photoelectric conversion layer, which is far away from the substrate base plate.
In an exemplary embodiment of the present disclosure, the phase retarder is a quarter-wave plate.
In an exemplary embodiment of the present disclosure, the phase retarder is a polymer liquid crystal layer, has a thickness of 1 μm or more and 3 μm or less, and has a transmittance of 95% or more.
In an exemplary embodiment of the present disclosure, the linear polarizer is a coated linear polarizer, the thickness of the coated linear polarizer is greater than or equal to 1 μm and less than or equal to 10 μm, the transmittance is greater than or equal to 30% and less than or equal to 45%, and the polarization degree is greater than or equal to 85% and less than or equal to 99%.
In an exemplary embodiment of the present disclosure, the display panel further includes:
and the touch sensing structure is arranged between the packaging structure and the phase delay piece.
According to an aspect of the present disclosure, there is provided a method of manufacturing a display panel, including:
providing a backboard, wherein the backboard comprises a substrate, a photoelectric sensing structure and a light-emitting structure, wherein the photoelectric sensing structure and the light-emitting structure are arranged on the substrate, and the light-emitting structure comprises a light-emitting layer;
forming a packaging structure on one surfaces of the photoelectric sensing structure and the light-emitting structure, which are far away from the substrate base plate;
forming a phase delay sheet material layer on one surface of the packaging structure far away from the back plate;
forming a linear polarizer material layer on one surface of the phase retarder material layer, which is far away from the back plate;
patterning the phase retarder material layer and the linear polarizer material layer to form a phase retarder, wherein the linear polarizer material layer forms a linear polarizer;
Forming a color film layer on one surface of the linear polarizer, which is far away from the back plate, wherein the color film layer comprises a plurality of color resistance areas, and the orthographic projection of the color resistance areas on the back plate is superposed with the orthographic projection of the light-emitting layer on the back plate;
the phase retarder is at least positioned among the color resistance areas and at least fills gaps among the color resistance areas; and the orthographic projection of the linear polarizer on the back plate is superposed with the orthographic projection of the phase retarder on the back plate.
According to the technical scheme, the invention has at least one of the following advantages and positive effects:
according to the display panel, the phase delay sheet is arranged on one surface, far away from the back plate, of the packaging structure, the wired polaroid is arranged on one surface, far away from the back plate, of the phase delay sheet, the color film layer is arranged on one surface, far away from the back plate, of the online polaroid, the color film layer comprises a plurality of color resistance areas, orthographic projections of the color resistance areas on the back plate are overlapped with orthographic projections of the light emitting layer on the back plate, the phase delay sheet is at least located among the color resistance areas, and at least gaps among the color resistance areas are filled; the orthographic projection of the linear polaroid on the back plate is superposed with the orthographic projection of the phase retarder on the back plate. On one hand, a phase delay sheet and a linear polarizer are used for replacing a black matrix in the color film layer to form a one-way light transmission effect; the reflected light of the fingerprint can be transmitted through the phase delay sheet and the linear polarizer and then is transmitted to the photoelectric sensing structure to realize the fingerprint identification function; after the ambient light enters the backboard, the reflected light reflected by the metal layer in the backboard to the ambient light can be prevented from being emitted, and the influence on the display effect is avoided; in another aspect, the phase retarder and the linear polarizer are not arranged above the light emitting layer, so that the problems of low brightness and high power consumption of the display panel caused by low transmittance of the phase retarder and the linear polarizer are solved.
Drawings
The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
FIG. 1 is a schematic diagram of an optical path for fingerprint recognition in a display panel according to the related art;
FIG. 2 is a schematic diagram of an exemplary embodiment of a display panel according to the present invention;
FIG. 3 is a schematic diagram illustrating the display panel shown in FIG. 2 after a first pixel dielectric layer is formed thereon;
FIG. 4 is a schematic structural diagram of a second pixel dielectric layer formed on the substrate of FIG. 3;
FIG. 5 is a schematic diagram of the structure of another exemplary embodiment of a display panel according to the present invention;
FIG. 6 is a schematic diagram of the light path blocking ambient light in a display panel of the present invention;
FIG. 7 is a schematic diagram of a structure of yet another exemplary embodiment of a display panel according to the present invention;
fig. 8 is a schematic block diagram of an exemplary embodiment of a method of manufacturing a display panel of the present invention.
The reference numerals of the main elements in the figures are explained as follows:
1. a substrate base plate; 21. a source and a drain; 22. a first thin film transistor; 23. a second thin film transistor;
3. a photoelectric sensor device; 31. a fourth electrode; 32. a photoelectric conversion layer; 33. a third electrode;
4. a light emitting device; 41. a first electrode; 42. a first pixel dielectric layer; 421. a first via hole; 43. a second pixel dielectric layer; 431. a second via hole; 44. a light emitting layer; 45. a second electrode; 46. a spacer;
5. A packaging structure;
6. a phase retarder; 7. a linear polarizer; 8. a third pixel dielectric layer;
9. a color film layer; 91. a black matrix; 92. a color blocking area;
10. a glass cover plate; 11. a fingerprint;
121. a first planarizing layer; 122. a second planarizing layer; 123. a third via hole;
131. a first protective layer; 132. a second protective layer;
14. an insulating layer; 15. and connecting the electrodes.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Referring to fig. 1, a schematic diagram of an optical path for fingerprint recognition in a display panel according to the related art is shown. In the related art, the optical fingerprint recognition is to use light emitted by the OLED to enter the display panel after being reflected by the fingerprint 11 or to pass through the display panel to be received by the photoelectric sensing structure, however, only the portion of the display panel that is not shielded by the anode (the first electrode 41) can transmit the light, and the color film layer 9 in the COE (CF on Encapsulation, color film layer on the Encapsulation layer) shields the portion that is not shielded by the black matrix 91, so the path of the reflected light of the fingerprint is completely sealed, and thus the fingerprint recognition cannot be performed.
The present exemplary embodiment first provides a display panel, referring to fig. 2, 3 and 4, which are schematic structural views of an exemplary embodiment of a display panel according to the present invention; the display panel can comprise a back plate, a packaging structure 5, a phase retarder 6, a linear polarizer 7 and a color film layer 9; the back plate comprises a substrate base plate 1, and a photoelectric sensing structure and a light-emitting structure which are arranged on the substrate base plate 1, wherein the light-emitting structure comprises a light-emitting layer 44; the packaging structure 5 is arranged on one surfaces of the photoelectric sensing structure and the light-emitting structure, which are far away from the substrate; the phase delay sheet 6 is arranged on one surface of the packaging structure 5 far away from the back plate; the linear polarizer 7 is arranged on one surface of the phase retarder 6, which is far away from the back plate; the color film layer 9 is arranged on one surface of the linear polarizer 7, which is far away from the back plate, the color film layer 9 comprises a plurality of color resistance areas 92, and the orthographic projection of the color resistance areas 92 on the back plate is superposed with the orthographic projection of the light-emitting layer 44 on the back plate; the phase delay plate 6 is at least positioned between the color resistance regions 92, and at least fills gaps between the color resistance regions 92; the orthographic projection of the linear polarizer 7 on the back plate is superposed with the orthographic projection of the phase retarder 6 on the back plate.
The display panel replaces a black matrix 91 in the color film layer 9 by the phase delay sheet 6 and the linear polarizer 7 to form a one-way light transmission effect; the reflected light of the fingerprint 11 can be transmitted to the photoelectric sensing structure through the phase delay sheet 6 and the linear polarizer 7 to realize the fingerprint identification function; after the ambient light enters the backboard, the metal layer in the backboard can be prevented from reflecting the reflected light reflected by the ambient light, and the influence on the display effect is avoided. The phase retarder and the linear polarizer are not arranged above the light emitting layer, so that the problems of low brightness and high power consumption of the display panel caused by low transmittance of the phase retarder 6 and the linear polarizer 7 are solved.
In the present exemplary embodiment, the backplate may include a substrate base plate 1, and a photoelectric sensing structure and a light emitting structure disposed over the substrate base plate 1.
The substrate 1 may be a flexible substrate, but a rigid substrate may be used.
The photoelectric sensing structure may include a first thin film transistor 22 and a photoelectric sensor device 3, the first thin film transistor 22 being provided on the substrate base plate 1; the photoelectric sensor device 3 is provided on a surface of the first thin film transistor 22 remote from the substrate base plate 11, and is electrically connected to the first thin film transistor 22.
The light emitting structure may include a second thin film transistor 23 and a light emitting device 4, the second thin film transistor 23 being disposed on the substrate base 1; the light emitting device 4 is provided on a surface of the second thin film transistor 23 remote from the base substrate 1, and is electrically connected to the second thin film transistor 23.
Specifically, the method comprises the following steps: the first thin film transistor 22 and the second thin film transistor 23 are provided over the substrate 1, and the first thin film transistor 22 and the second thin film transistor 23 may be of a top gate type, a bottom gate type, or a dual gate type, and in this exemplary embodiment, the first thin film transistor 22 is of a top gate type. The second thin film transistor 23 is of a double gate type. The thin film transistor has a structure of the prior art, and thus, the details thereof are not repeated herein.
The first protective layer 131 is provided on the surface of the first thin film transistor 22 and the second thin film transistor 23 away from the base substrate 1, the first planarizing layer 121 is provided on the surface of the first protective layer 131 away from the base substrate 1, the first planarizing layer 121 is made of an organic resin material, and the first planarizing layer 121 can solve the problem of high dark current of the photoelectric sensing device 3.
An insulating layer 14 is provided on a surface of the first planarizing layer 121 remote from the base substrate 1, a connection electrode 15 and the photosensor device 3 are provided on a surface of the insulating layer 14 remote from the base substrate 1, and the connection electrode 15 is electrically connected to the source-drain electrode 21 of the second thin film transistor 23 through via holes in the first protective layer 131, the first planarizing layer 121, and the insulating layer 14. The photo-sensor device 3 may be an amorphous silicon photo-sensor device, i.e. the photo-sensor device 3 may be a PIN photodiode. The photoelectric sensor device 3 includes a fourth electrode 31, a photoelectric conversion layer 32, and a third electrode 33, and the photoelectric conversion layer 32 is located between the fourth electrode 31 and the third electrode 33. The third electrode 33 of the photo-sensor device 3 is electrically connected to the source-drain electrode 21 of the first thin film transistor 22 through the first protective layer 131, the first planarization layer 121 and the via hole on the insulating layer 14 to control the switching of the photo-sensor device 3 through the first thin film transistor 22. The photoelectric conversion layer 32 is used for receiving the reflected light reflected by the fingerprint 11 and converting the reflected light into an electrical signal to be transmitted to the processor for processing and identifying the fingerprint 11.
A second protective layer 132 is provided on the surface of the connection electrode 15 and the photosensor device 3 which is away from the substrate board 1, a second planarizing layer 122 is provided on the surface of the second protective layer 132 which is away from the substrate board 1, and a third via hole 123 is provided in the second planarizing layer 122 (in the figure, the third via hole 123 is indicated by an arrow at the hole wall of the third via hole 123 because the first pixel mediating layer 42 is already formed in the third via hole 123). A light-emitting device 4 is provided on a surface of the second planarizing layer 122 remote from the base substrate 1. The light emitting device 4 may include a first electrode 41, a first pixel dielectric layer 42, a second pixel dielectric layer 43, a light emitting layer 44, a second electrode 45, and a spacer 46.
Specifically, the method comprises the following steps: the first electrode 41 may be an anode, the first electrode 41 is disposed on a surface of the second planarization layer 122 away from the substrate 1, and the first electrode 41 is electrically connected to the connection electrode 15 through the third via hole 123 on the second planarization layer 122 and the via hole on the second protection layer 132, and is connected to the second thin film transistor 23 through the connection electrode 15, so as to control the light emitting device 4 to be switched through the second thin film transistor 23.
A first pixel defining layer 42 is disposed on a surface of the first electrode 41 away from the substrate base plate 1, a transmittance of the first pixel defining layer 42 for light with a wavelength less than 600nm is higher than a transmittance of light with a wavelength greater than 600nm, that is, a transmittance of light with a wavelength less than 600nm through the first pixel defining layer 42 is higher, and a transmittance of light with a wavelength greater than 600nm through the first pixel defining layer 42 is lower, so that a color of light of which light passes through the first pixel defining layer 42 is blue, cyan or green; referring to fig. 3, a first via hole 421 is disposed on the first pixel dielectric layer 42, and the first via hole 421 is connected to the first electrode 41, that is, the first via hole 421 is located above the first electrode 41, so that the first electrode 41 is partially exposed.
Referring to fig. 4, a second pixel defining layer 43 is disposed on a surface of the first pixel defining layer 42 away from the substrate 1, and an orthogonal projection of the first pixel defining layer 42 on the substrate 1 is within an orthogonal projection of the second pixel defining layer 43 on the substrate 1, that is, the second pixel defining layer 43 completely covers the first pixel defining layer 42, and an edge of the second pixel defining layer 43 protrudes beyond an edge of the first pixel defining layer 42 by 0.5 μm or more; the second via hole 431 is disposed on the second pixel dielectric layer 43, and an orthographic projection of the second via hole 431 on the substrate base plate 1 is in an orthographic projection of the first via hole 421 on the substrate base plate 1, that is, the position of the second via hole 431 is the same as that of the first via hole 421, but the radial dimension of the second via hole 431 is smaller than that of the first via hole 421, so as to ensure that the second pixel dielectric layer 43 can completely cover the first pixel dielectric layer 42 and expose the first electrode 41 at the first via hole 421 and the second via hole 431. The second pixel dielectric layer 43 can protect the first pixel dielectric layer 42.
The orthographic projection of the photoelectric sensing device 3 on the substrate base plate 1 is at least partially positioned in the orthographic projection of the first pixel dielectric layer 42 on the substrate base plate 1, namely the first pixel dielectric layer 42 partially or completely covers the lower photoelectric sensing device 3, the first pixel dielectric layer 42 shields the photoelectric sensing device 3, and the problem that the noise of the photoelectric sensing device 3 is too large when the fingerprint 11 is identified under strong ambient light is solved.
A light emitting layer 44 is disposed in the second via 431, the light emitting layer 44 is in contact with the first electrode 41, and an electrical signal is transmitted to the light emitting layer 44 through the first electrode 41; the orthographic projection of the light emitting layer 44 on the substrate 1 and the orthographic projection of the photoelectric conversion layer 32 on the substrate 1 do not overlap, that is, the orthographic projection of the photoelectric sensor device 3 on the substrate 1 and the orthographic projection of the light emitting layer 44 on the substrate 1 do not overlap. A spacer 46 is arranged on one surface of the second pixel dielectric layer 43 away from the substrate base plate 1, and the spacer 46 is used for supporting a mask plate in the process of evaporating the luminescent layer 44; a second electrode 45 is provided on the surfaces of the light-emitting layer 44, the second pixel dielectric layer 43, and the spacer 46 that are away from the base substrate 1, and the second electrode 45 may be a cathode.
Further, the specific structure of the light emitting device 4 is not limited to the above description, and for example, as shown in fig. 5, the second pixel defining layer 43 may not be provided, that is, only one first pixel defining layer 42 may be provided, and the transmittance of the first pixel defining layer 42 with respect to light having a wavelength of less than 600nm is higher than that of light having a wavelength of more than 600nm, that is, the transmittance of light having a wavelength of less than 600nm through the first pixel defining layer 42 is higher, and the transmittance of light having a wavelength of more than 600nm through the first pixel defining layer 42 is lower, so that the color of light having passed through the first pixel defining layer 42 is blue, cyan or green; the first via hole 421 is disposed on the first pixel dielectric layer 42, and the first via hole 421 is connected to the first electrode, that is, the first via hole 421 is located above the first electrode 41, so that the first electrode 41 is partially exposed. The orthographic projection of the photoelectric sensing device 3 on the substrate base plate 1 is at least partially positioned in the orthographic projection of the first pixel dielectric layer 42 on the substrate base plate 1, namely the first pixel dielectric layer 42 partially or completely covers the lower photoelectric sensing device 3, so that the problem of overlarge noise of the photoelectric sensing device 3 when the fingerprint 11 is identified under strong ambient light is solved. The light-emitting layer 44 is disposed in the first via 421 on the first pixel defining layer 42; the second electrode is provided on the surface of the light-emitting layer 44 remote from the base substrate 1. The structural arrangement of the rest parts is unchanged, and therefore, the description is omitted here.
As shown in fig. 2, a package structure 5 is disposed on a surface of the second electrode 45 of the light emitting device 4 away from the substrate 1. The Encapsulation structure 5 may use TFE (Thin-Film Encapsulation).
It should be noted that in some of the above exemplary embodiments, the photo-sensing structure is disposed between the substrate board 1 and the light-emitting structure. In other exemplary embodiments, the photoelectric sensing structure may also be disposed on a side of the substrate 1 away from the light emitting structure; specifically, the backplate may include a substrate base plate 1, a light emitting structure disposed on the substrate base plate 1; and the photoelectric sensing structure is arranged on one surface of the substrate base plate 1, which is far away from the light-emitting structure. The specific structure of the light emitting structure is the same as above, and is not described herein again. The photo-sensing structure has its individual conductors.
In some other exemplary embodiments, the display panel may further include a touch sensing structure (not shown), and the touch sensing structure is disposed between the package structure 5 and the retarder 6. The touch sensing structure is used for receiving touch of a user to generate a touch signal.
In the present exemplary embodiment, a phase retarder 6 is disposed on a surface of the package structure 5 away from the substrate 1, the phase retarder 6 is at least located between the color-resisting regions 92 and at least fills a gap between the color-resisting regions 92, that is, an orthogonal projection of the phase retarder 6 on the substrate 1 at least fills a gap between orthogonal projections of the light-emitting layer 44 on the substrate 1, that is, the phase retarder 6 may be located between the color-resisting regions 92 and fills a gap between the color-resisting regions 92; the color resistance region 92 can also be slightly protruded to cover the edge part of the color resistance region; that is, the phase retarder 6 may be provided with a first through hole through which light emitted from the light-emitting layer 44 can exit, and an orthogonal projection of the light-emitting layer 44 on the substrate board 1 may coincide with an orthogonal projection of the first through hole on the substrate board 1, or an edge of the orthogonal projection of the first through hole on the substrate board 1 may be within the orthogonal projection of the light-emitting layer 44 on the substrate board 1. For error reasons, the orthographic projection edge of the first through hole on the substrate base plate 1 may protrude about 4 microns relative to the orthographic projection edge of the second via hole on the second pixel dielectric layer 43 on the substrate base plate 1, or the orthographic projection edge of the first through hole on the substrate base plate 1 is indented about 4 microns relative to the orthographic projection edge of the second via hole on the second pixel dielectric layer 43 on the substrate base plate 1; in other exemplary embodiments, the orthographic projection edge of the first through hole on the substrate base plate 1 may protrude about 4 microns relative to the orthographic projection edge of the via hole on the first pixel dielectric layer 42 on the substrate base plate 1, or the orthographic projection edge of the first through hole on the substrate base plate 1 is indented about 4 microns relative to the orthographic projection edge of the via hole on the first pixel dielectric layer 42 on the substrate base plate 1.
The phase retardation plate 6 is a quarter-wave plate, the phase retardation plate 6 can be a polymer liquid crystal layer, the thickness is more than or equal to 1 μm and less than or equal to 3 μm, and the transmittance is more than or equal to 95%.
In the present exemplary embodiment, a linear polarizer 7 is provided on the side of the phase retarder 6 away from the base substrate 1, and the orthographic projection of the linear polarizer 7 on the base substrate 1 coincides with the orthographic projection of the phase retarder 6 on the base substrate 1; that is, the second through hole is provided on the online polarizer 7, and the orthographic projection of the light emitting layer 44 on the substrate base plate 1 coincides with the orthographic projection of the second through hole on the substrate base plate 1, so that the light emitted by the light emitting layer 44 can be emitted through the first through hole and the second through hole, or the position and the size of the second through hole on the online polarizer 7 are completely the same as the position and the size of the first through hole on the phase retarder 6 in the orthographic projection of the edge of the orthographic projection of the second through hole on the substrate base plate 1 on the light emitting layer 44 on the substrate base plate 1, and the description is omitted here. The linear polarizer 7 is a coated linear polarizer, the thickness of which is more than or equal to 1 μm and less than or equal to 10 μm, the transmittance of which is more than or equal to 30% and less than or equal to 45%, and the polarization degree of which is more than or equal to 85% and less than or equal to 99%.
Referring to fig. 6, the retardation film 6 and the coated-type polarizer can be used to prevent the reflection of ambient light from the metal layer inside the back plate, such as the reflection light of the metal layer or the metal traces (source/drain electrodes 21, etc.) inside the back plate, which affects the display effect. Ambient light is modulated into linearly polarized light in the same direction as the optical axis through the linear polarizer 7 after incidence, is modulated into circularly polarized light in a certain direction through the quarter-wave plate, forms reverse circularly polarized light due to half-wave loss after being reflected by a metal layer or metal wiring (source drain 21 and the like), and is modulated into linearly polarized light perpendicular to the optical axis of the linear polarizer 7 after passing through the quarter-wave plate again, so that reflected light is blocked and cannot be emitted. Part of the positions can be shielded by the color film layer to reduce the reflectivity to the ambient light.
The film group formed by the phase delay sheet 6 and the coating type linear polaroid is one-way light-permeable, so that light emitted by the light emitting layer 44 is transmitted to the fingerprint 11, and reflected light of the fingerprint 11 can penetrate and enter the back plate or downwards penetrate to the photoelectric sensing structure, so that the reflected light of the fingerprint can penetrate through the phase delay sheet 6 and the linear polaroid 7 to be transmitted to the photoelectric sensing structure to realize the fingerprint identification function; but also can prevent the reflection light reflected by the metal layer in the back plate to the ambient light from emitting, thereby avoiding the influence on the display effect and being compatible with COE.
In both cases where two pixel defining layers (the first pixel defining layer 42 and the second pixel defining layer 43) and one first pixel defining layer 42 are provided, the third pixel defining layer 8 may be provided on the surface of the linear polarizer 7 remote from the base substrate 1. Referring to fig. 7, an orthographic projection of the third pixel dielectric layer 8 on the substrate base plate 1 coincides with an orthographic projection of the phase retarder 6 on the substrate base plate 1, that is, a third through hole is provided on the third pixel dielectric layer 8, and an orthographic projection of the light-emitting layer 44 on the substrate base plate 1 coincides with an orthographic projection of the third through hole on the substrate base plate 1, or an orthographic projection of an edge of the orthographic projection of the third through hole on the substrate base plate 1 on the light-emitting layer 44 on the substrate base plate 1, so that light emitted by the light-emitting layer 44 can be emitted through the first through hole, the second through hole and the third through hole, and a position and a size of the third through hole on the third pixel dielectric layer 8, and a position and a size of the second through hole on the polarizer 7 are completely the same as a position and a size of the first through hole on the phase retarder 6, which will not be described herein again. The transmittance of the third pixel defining layer 8 for light having a wavelength of less than 600nm is higher than that of light having a wavelength of more than 600nm, that is, the transmittance of light having a wavelength of less than 600nm through the pixel defining layer is high, and the transmittance of light having a wavelength of more than 600nm through the pixel defining layer is low, so that the color of light transmitted through the third pixel defining layer 8 is blue, cyan or green. The orthographic projection of the photoelectric sensing structure on the substrate base plate 1 is at least partially positioned in the orthographic projection of the third pixel dielectric layer 8 on the substrate base plate 1, namely the third pixel dielectric layer 8 partially or completely covers the lower photoelectric sensing structure 3, so that the problem of overlarge noise of the photoelectric sensing structure 3 when a fingerprint is identified under strong ambient light is solved.
With reference to fig. 2, fig. 5 or fig. 7, a color film layer 9 is disposed on a surface of the online polarizer 7 away from the substrate base plate 1, the color film layer 9 includes a plurality of color-resisting regions 92, and an orthographic projection of the color-resisting regions 92 on the backplane coincides with an orthographic projection of the light-emitting layer 44 on the backplane. A glass cover plate 10 is attached to a surface of the color film layer 9 away from the substrate base plate 1 by an Optically Clear Adhesive (OCA).
Of course, as shown in fig. 7, when the third pixel defining layer 8 is provided, the color film layer 9 is provided on the surface of the third pixel defining layer 8 away from the base substrate 1, and the black matrix is not provided on the color film layer 9. The one side of keeping away from substrate base plate 1 at various rete 9 is through OCA laminating glass apron 10.
Further, the present exemplary embodiment further provides a display device, which includes the display panel described above, and the specific structure of the display panel has been described in detail above, and therefore, the detailed description is omitted here.
The specific type of the display device is not particularly limited, and any display device commonly used in the art may be used, specifically, for example, an OLED display, a mobile device such as a mobile phone, a wearable device such as a watch, a VR device, and the like.
It should be noted that the display device includes other necessary components and components besides the display panel, taking the display as an example, specifically, such as a housing, a circuit board, a power line, and the like, and those skilled in the art can supplement the display device accordingly according to the specific use requirements of the display device, and details are not described herein.
Compared with the prior art, the display device provided by the embodiment of the invention has the same beneficial effects as the display panel provided by the embodiment, and the detailed description is omitted here.
Further, the present exemplary embodiment also provides a method for manufacturing a display panel, which may include, as shown in fig. 8, the following steps:
step S10, providing a backplane, where the backplane includes a substrate 1, and a photo-sensing structure and a light-emitting structure disposed on the substrate 1, and the light-emitting structure includes a light-emitting layer 44.
Step S20, forming a package structure 5 on the photoelectric sensing structure and the light emitting structure on the surface far away from the substrate 1.
Step S30, forming a phase retarder material layer on a surface of the package structure 5 away from the back plate.
In step S40, a linear polarizer material layer is formed on the side of the phase retarder material layer away from the back plate.
Step S50, performing patterning processing on the phase retarder material layer and the linear polarizer material layer to form a phase retarder 6 on the phase retarder material layer, and forming a linear polarizer 7 on the linear polarizer material layer.
Step S60, forming a color film 9 on a surface of the linear polarizer 7 away from the backplane, where the color film 9 includes a plurality of color-resist regions 92, and an orthographic projection of the color-resist regions 92 on the backplane coincides with an orthographic projection of the light-emitting layer 44 on the backplane.
The phase delay plate 6 is at least positioned between the color resistance regions 92, and at least fills gaps between the color resistance regions 92; the orthographic projection of the linear polarizer 7 on the back plate is superposed with the orthographic projection of the phase retarder 6 on the back plate.
In the present exemplary embodiment, a liquid crystal polymer solution is spin-coated, blade-coated, printed, etc. to form a uniform film layer on the side of the package structure 5 away from the back plate and cured to form a phase retarder material layer; the dichroic dye forms a uniform film layer on the surface of the phase retarder material layer, which is far away from the back plate, by spin coating, blade coating, printing and other modes, and the uniform film layer is cured to form a linear polarizer material layer, and the linear polarizer material layer is aligned under the induction of liquid crystal, so that the whole film layer has the polarizing characteristic. Then, the phase retarder material layer and the linear polarizer material layer are subjected to the same photoetching or dry etching, so that the phase retarder material layer forms a phase retarder 6, and the linear polarizer material layer forms a linear polarizer 7.
The thickness of the film layer formed by coating is relatively thin, while the thickness of the film layer formed by stretching cannot meet the requirement.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments, and the features discussed in connection with the embodiments are interchangeable, if possible. In the above description, numerous specific details are provided to give a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of the invention.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
In this specification, the terms "a", "an", "the" and "the" are used to indicate the presence of one or more elements/components/parts/etc.; the terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first," "second," and "third," etc. are used merely as labels, and are not limiting on the number of their objects.
It is to be understood that the invention is not limited in its application to the details of construction and the arrangement of components set forth in the present description. The invention is capable of other embodiments and of being practiced and carried out in various ways. The foregoing variations and modifications fall within the scope of the present invention. It will be understood that the invention disclosed and defined in this specification extends to all alternative combinations of two or more of the individual features mentioned or evident from the text and/or drawings. All of these different combinations constitute alternative aspects of the present invention. The embodiments described in this specification illustrate the best mode known for carrying out the invention and will enable those skilled in the art to utilize the invention.

Claims (12)

1. A display panel, comprising:
the back plate comprises a substrate base plate, and a photoelectric sensing structure and a light-emitting structure which are arranged on the substrate base plate, wherein the photoelectric sensing structure comprises a photoelectric sensing device, the light-emitting structure comprises a light-emitting layer, and the orthographic projection of the photoelectric sensing device on the substrate base plate is not overlapped with the orthographic projection of the light-emitting layer on the substrate base plate;
the packaging structure is arranged on one surfaces, far away from the substrate, of the photoelectric sensing structure and the light-emitting structure;
the phase delay piece is arranged on one surface of the packaging structure, which is far away from the back plate;
the linear polaroid is arranged on one surface of the phase retarder, which is far away from the back plate;
the color film layer is arranged on one surface of the linear polarizer, which is far away from the back plate, and comprises a plurality of color resistance areas, and the orthographic projection of the color resistance areas on the back plate is superposed with the orthographic projection of the light-emitting layer on the back plate;
the phase delay plate is at least positioned among the color resistance areas and at least fills gaps among the color resistance areas; the orthographic projection of the linear polarizer on the back plate is superposed with the orthographic projection of the phase retarder on the back plate;
The light emitting structure further includes:
the first electrode is arranged on the substrate base plate;
the first pixel dielectric layer is arranged on one surface, far away from the substrate, of the first electrode, the transmittance of the first pixel dielectric layer for light with the wavelength less than 600nm is higher than that of light with the wavelength more than 600nm, a first through hole is formed in the first pixel dielectric layer and communicated with the first electrode, and the orthographic projection of the photoelectric sensing device on the substrate is at least partially positioned in the orthographic projection of the first pixel dielectric layer on the substrate;
and the second electrode is arranged on one surface of the light-emitting layer, which is far away from the substrate base plate.
2. The display panel according to claim 1,
the photoelectric sensing structure further comprises:
the first thin film transistor is arranged on the substrate base plate;
the photoelectric sensor is arranged on one surface of the first thin film transistor, which is far away from the substrate base plate, and is electrically connected with the first thin film transistor;
the light emitting structure further includes:
the second thin film transistor is arranged on the substrate base plate;
and the light-emitting device is arranged on one surface of the second thin film transistor, which is far away from the substrate base plate, and is electrically connected with the second thin film transistor, and the light-emitting device comprises the light-emitting layer, the first electrode, the first pixel dielectric layer and the second electrode.
3. The display panel according to claim 2, characterized in that the display panel further comprises:
the first protective layer is arranged on one surfaces, far away from the substrate base plate, of the first thin film transistor and the second thin film transistor;
the first planarization layer is arranged on one surface, far away from the substrate, of the first protection layer;
the insulating layer is arranged on one surface, far away from the substrate base plate, of the first planarization layer;
the connecting electrode is arranged on one surface of the insulating layer, which is far away from the substrate base plate;
the photoelectric sensor is arranged on one surface of the insulating layer, which is far away from the substrate base plate;
the second protective layer is arranged on the connection electrode and one surface, far away from the substrate, of the photoelectric sensing device;
and the second planarization layer is arranged on one surface, far away from the substrate base plate, of the second protection layer, and a third through hole is formed in the second planarization layer.
4. The display panel of claim 1, wherein the light emitting layer is disposed in the first via hole on the first pixel dielectric layer.
5. The display panel of claim 1, wherein the light emitting structure further comprises:
The second pixel dielectric layer is arranged on one surface, far away from the substrate base plate, of the first pixel dielectric layer, the orthographic projection of the first pixel dielectric layer on the substrate base plate is in the orthographic projection of the second pixel dielectric layer on the substrate base plate, a second through hole is formed in the second pixel dielectric layer, and the orthographic projection of the second through hole on the substrate base plate is in the orthographic projection of the first through hole on the substrate base plate;
the light emitting layer is disposed in the second via hole on the second pixel dielectric layer.
6. The display panel according to claim 4 or 5, characterized in that the display panel further comprises:
the third pixel dielectric layer is arranged on one surface of the linear polarizer, which is far away from the substrate base plate, and the transmittance of the third pixel dielectric layer to the light with the wavelength less than 600nm is higher than that of the light with the wavelength more than 600 nm; the orthographic projection of the third pixel dielectric layer on the substrate base plate is coincident with the orthographic projection of the phase retarder on the substrate base plate, and the orthographic projection of the photoelectric sensing device on the substrate base plate is at least partially positioned in the orthographic projection of the third pixel dielectric layer on the substrate base plate.
7. The display panel according to claim 3, wherein the photoelectric sensor device comprises:
the third electrode is arranged on one surface, far away from the substrate base plate, of the insulating layer and is electrically connected with the first thin film transistor;
the photoelectric conversion layer is arranged on one surface, far away from the substrate, of the third electrode;
and the fourth electrode is arranged on one surface of the photoelectric conversion layer, which is far away from the substrate.
8. The display panel according to any one of claims 1 to 5 or 7, wherein the phase retarder is a quarter-wave plate.
9. The display panel according to claim 8, wherein the phase retarder is a polymer liquid crystal layer, has a thickness of 1 μm or more and 3 μm or less, and has a transmittance of 95% or more.
10. The display panel according to any one of claims 1 to 5 and 7, wherein the linear polarizer is a coated linear polarizer, has a thickness of 1 μm or more and 10 μm or less, a transmittance of 30% or more and 45% or less, and a degree of polarization of 85% or more and 99% or less.
11. The display panel according to any one of claims 1 to 5 and 7, further comprising:
And the touch sensing structure is arranged between the packaging structure and the phase delay piece.
12. A method for manufacturing a display panel, comprising:
providing a back plate, wherein the back plate comprises a substrate base plate, and a photoelectric sensing structure and a light-emitting structure which are arranged on the substrate base plate, the photoelectric sensing structure comprises a photoelectric sensing device, the light-emitting structure comprises a light-emitting layer, and the orthographic projection of the photoelectric sensing device on the substrate base plate is not overlapped with the orthographic projection of the light-emitting layer on the substrate base plate; the light emitting structure further includes:
the first electrode is arranged on the substrate base plate;
the first pixel dielectric layer is arranged on one surface, far away from the substrate, of the first electrode, the transmittance of the first pixel dielectric layer for light with the wavelength less than 600nm is higher than that of light with the wavelength more than 600nm, a first through hole is formed in the first pixel dielectric layer and communicated with the first electrode, and the orthographic projection of the photoelectric sensing device on the substrate is at least partially positioned in the orthographic projection of the first pixel dielectric layer on the substrate;
the second electrode is arranged on one surface, far away from the substrate, of the light-emitting layer;
Forming a packaging structure on one surfaces of the photoelectric sensing structure and the light-emitting structure, which are far away from the substrate base plate;
forming a phase delay sheet material layer on one surface of the packaging structure far away from the back plate;
forming a linear polarizer material layer on one surface of the phase retarder material layer, which is far away from the back plate;
patterning the phase retarder material layer and the linear polarizer material layer to form a phase retarder, wherein the linear polarizer material layer forms a linear polarizer;
forming a color film layer on one surface of the linear polarizer, which is far away from the back plate, wherein the color film layer comprises a plurality of color resistance areas, and the orthographic projection of the color resistance areas on the back plate is superposed with the orthographic projection of the light-emitting layer on the back plate;
the phase delay plate is at least positioned among the color resistance areas and at least fills gaps among the color resistance areas; and the orthographic projection of the linear polarizer on the back plate is superposed with the orthographic projection of the phase retarder on the back plate.
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