CN111524834B - Polysilicon cleaning device and method - Google Patents
Polysilicon cleaning device and method Download PDFInfo
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- CN111524834B CN111524834B CN202010356974.9A CN202010356974A CN111524834B CN 111524834 B CN111524834 B CN 111524834B CN 202010356974 A CN202010356974 A CN 202010356974A CN 111524834 B CN111524834 B CN 111524834B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a polysilicon cleaning device and a method, which belong to the technical field of semiconductors, wherein the polysilicon cleaning device comprises: an etching container for containing polysilicon and an acid solution; and the acid liquor pulsation unit is communicated with the etching container and is used for driving acid liquor in the etching container to fluctuate according to a specified rule so as to drive the polysilicon to fluctuate. Therefore, the etching cleaning efficiency can be improved, the process time can be shortened, the productivity can be improved, and the energy consumption and the liquid consumption can be effectively reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a polysilicon cleaning device and method.
Background
The polycrystalline silicon is used as a base material of monocrystalline silicon in the semiconductor industry, has extremely high cleanliness requirement, and is generally obtained from a professional polycrystalline silicon raw material supplier, but a lot of crystal bar structure losses occur in the crystal pulling process, and the monocrystalline silicon is cracked due to accidental machine faults in the subsequent roll grinding and cutting working section, so that polycrystalline parts and cracked silicon materials are required to be recycled, and the raw material cost is reduced; however, after transportation and multiple transfers of the ingot, many contaminants are contacted, including mainly metal particles on the surface of the polysilicon feedstock, and other organic or inorganic contaminants, which require thorough cleaning for reuse.
At present, when etching and cleaning are performed on polysilicon, a motor drives a polysilicon frame filled with polysilicon in an etching tank to move up and down so as to drive the polysilicon in the polysilicon frame to move up and down in acid liquor, thereby improving the cleaning efficiency. However, this cleaning method requires lifting the entire polysilicon frame on which the polysilicon is loaded, and consumes a large amount of energy.
Disclosure of Invention
In view of the above, the present invention provides a polysilicon cleaning device and method, which solves the problem of high energy consumption caused by the need of lifting the polysilicon frame loaded with polysilicon.
In order to solve the above technical problems, the present invention provides a polysilicon cleaning device, comprising:
an etching container for containing polysilicon and an acid solution;
and the acid liquor pulsation unit is communicated with the etching container and is used for driving acid liquor in the etching container to fluctuate according to a specified rule so as to drive the polysilicon to fluctuate.
Optionally, the acid liquor pulsation unit includes: a receiving chamber, a baffle, and a drive mechanism;
the accommodating cavity is communicated with the etching container, and the baffle is arranged in the accommodating cavity;
the driving mechanism is connected with the baffle and is used for driving the baffle to slide in the accommodating cavity and driving the acid liquor in the accommodating cavity to flow to the etching container so as to enable the acid liquor in the etching container to fluctuate.
Optionally, the accommodating cavity includes: a first acid cavity;
the first acid liquor cavity is composed of at least part of cavity walls of the accommodating cavity and the baffle, the baffle is in sliding connection with the cavity walls of the accommodating cavity and is tightly matched with the cavity walls of the accommodating cavity, and the first acid liquor cavity is used for accommodating acid liquor to flow to the etching container.
Optionally, the driving mechanism comprises a driving motor and a screw;
the driving motor is connected with the screw rod and used for driving the screw rod to rotate;
the screw rod is connected with the baffle and used for driving the baffle to slide in the accommodating cavity.
Optionally, the polysilicon cleaning device further includes: an acid liquor recovery unit;
the acid liquor recovery unit is communicated with the etching container and the acid liquor pulsation unit through a first valve, and is used for receiving acid liquor flowing out of the etching container and conveying the acid liquor to the acid liquor pulsation unit.
Optionally, the polysilicon cleaning device further includes: an acid liquid supply unit;
the acid liquor supply unit is communicated with the acid liquor recovery unit through a second valve.
Optionally, the polysilicon cleaning device further includes: a first acid liquid conveying pipe;
the first acid liquid conveying pipe comprises a first acid liquid inlet and a first acid liquid outlet, the first acid liquid inlet is communicated with the acid liquid recovery unit, the first acid liquid outlet is communicated with the acid liquid pulsation unit, and the distance between the lowest position of the first acid liquid inlet and the bottom of the acid liquid recovery unit is larger than a preset value;
the first valve is arranged on the first acid liquid conveying pipe.
Optionally, the acid liquor recovery unit comprises a second acid liquor accommodating cavity and a filter plate, and the filter plate is arranged at the bottom of the second acid liquor accommodating cavity.
Optionally, the polysilicon cleaning device further includes: a solid waste collection unit;
the solid waste collecting unit is communicated with the acid liquor recycling unit through a third valve and is used for recycling solids in the acid liquor recycling unit.
Optionally, the bottom of the etching container is in a conical structure, and the bottom of the etching container is communicated with the solid waste collecting unit and is used for recovering solid matters falling to the bottom in the etching container.
Optionally, the polysilicon cleaning device further includes: a second acid liquid conveying pipe;
the second acid liquid conveying pipe comprises a second acid liquid inlet and a second acid liquid outlet, the second acid liquid inlet is communicated with the accommodating cavity, and the second acid liquid outlet is communicated with the etching container;
the second acid liquid outlet is arranged at the bottom of the etching container, and an opening of the second acid liquid outlet faces upwards.
Optionally, the polysilicon cleaning device further includes: a flow distribution plate;
the flow distribution plate is arranged in the etching container, the flow distribution plate is arranged above the second acid liquid outlet, and the polysilicon is positioned above the flow distribution plate;
the flow distribution plate is gradually bent upwards from a central position to an edge position.
Optionally, the polysilicon cleaning device further includes: a gas supply unit;
the gas supply unit is communicated with the second acid liquid outlet and is used for mixing gas into the acid liquid flowing into the etching container from the accommodating cavity.
The invention also provides a polysilicon cleaning method, which is applied to a polysilicon cleaning device, wherein the polysilicon cleaning device comprises: an etching container for containing polysilicon and an acid solution, the method comprising:
and driving the acid liquor in the etching container to fluctuate according to a specified rule so as to drive the polysilicon to fluctuate.
Optionally, the polysilicon cleaning device further includes: the acid liquor pulsation unit is communicated with the etching container;
the step of driving the acid liquid in the etching container to fluctuate according to a specified rule so as to drive the polysilicon to fluctuate comprises the following steps:
the acid liquor pulsation unit drives the acid liquor in the etching container to fluctuate according to a specified rule.
Optionally, the acid liquor pulsation unit includes: the device comprises a containing cavity, a baffle and a driving mechanism, wherein the baffle is arranged in the containing cavity, the driving mechanism is connected with the baffle, and the containing cavity is communicated with the etching container;
the step of driving the acid liquor in the etching container to fluctuate according to a specified rule by the acid liquor pulsation unit comprises the following steps:
the driving mechanism drives the baffle to slide in the accommodating cavity;
the baffle drives the acid liquor in the accommodating cavity to flow to the etching container so as to enable the acid liquor in the etching container to fluctuate.
Optionally, the driving mechanism comprises a driving motor and a screw; the driving motor is connected with the screw rod; the screw is connected with the baffle;
the step of driving the baffle plate to slide in the accommodating cavity by the driving mechanism comprises the following steps:
the driving motor drives the screw to rotate;
the screw drives the baffle to slide in the accommodating cavity.
Optionally, the step of driving the acid solution in the etching container to fluctuate according to a specified rule includes:
and driving the acid liquor in the etching container to fluctuate according to a preset period and/or a preset amplitude.
The technical scheme of the invention has the following beneficial effects:
according to the embodiment of the invention, the acid liquor in the etching container is driven to pulsate in a specified rule through the acid liquor pulsion unit, and the polysilicon is driven to pulsate so as to accelerate the etching reaction, so that the etching cleaning efficiency is improved, the process time is shortened, the productivity is improved, and the energy consumption and the liquid consumption are effectively reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a polysilicon cleaning device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing the fluctuation of acid in an etching container according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of polysilicon fluctuation in an etching container according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the loosening motion of polysilicon within an etch vessel in accordance with an embodiment of the present invention;
fig. 5 is a schematic structural view of another polysilicon cleaning apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of an acid supply process of a polysilicon cleaning apparatus according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of an acid solution reflow process of a polysilicon cleaning apparatus according to an embodiment of the present invention;
fig. 8 is a flow chart of a polysilicon cleaning method according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate a relative positional relationship, which changes accordingly when the absolute position of the object to be described changes.
Referring to fig. 1, an embodiment of the present invention provides a polysilicon cleaning device, including:
an etching container 101 for containing polysilicon 103 and an acid solution;
and the acid liquor pulsation unit is communicated with the etching container 101 and is used for driving acid liquor in the etching container 101 to fluctuate according to a specified rule so as to drive the polysilicon 103 to fluctuate.
Wherein, the acid fluctuation in the etching container 101 may be periodic. The polysilicon 103 fluctuation period is consistent with the acid liquid fluctuation period. For example, the acid pulsation unit drives the acid in the etching container 101 to fluctuate according to the period and the amplitude shown in fig. 2, so as to drive the polysilicon 103 in the etching container 101 to fluctuate according to the period and the amplitude shown in fig. 3, and specifically, the fluctuating effect of the polysilicon 103 in the etching container 101 is shown in fig. 4.
The etching container 101 may be a cleaning etching tank.
In the embodiment of the invention, the acid liquor in the etching container 101 is driven to pulsate according to a specified rule by the acid liquor pulsation unit, and the polysilicon 103 is driven to fluctuate to accelerate the etching reaction, so that the energy consumption and the liquor consumption can be effectively reduced while the etching cleaning efficiency is improved, the process time is shortened, the productivity is improved, and the reliability and the safety are good.
In addition, other problems of the etching cleaning mode that the polysilicon frame 2 moves up and down under the drive of the motor 1 (through the lifting hanging buckle 3) can be avoided, for example, the movement speed is slow, the amplitude is small (only 10-20 mm), the structure is complex, the failure rate is high, the overall etching efficiency is low, and the cleaning is not clean. That is, in the embodiment of the present invention, the acid solution in the cleaning container 101 can drive the polysilicon 103 to move rapidly, and the cleaning device has the advantages of simple structure, low failure rate, high etching cleaning efficiency and clean cleaning.
The polysilicon cleaning device provided by the embodiment of the invention is mainly suitable for the preparation stage of raw materials in the crystal pulling process of the single crystal furnace.
The above-described polysilicon cleaning apparatus is exemplified below.
Optionally, referring to fig. 5, the acid pulsation unit includes: a housing chamber, a shutter 111, and a driving mechanism;
the accommodating cavity is communicated with the etching container 101, and the baffle 111 is arranged in the accommodating cavity;
the driving mechanism is connected with the baffle 111, and is used for driving the baffle 111 to slide in the accommodating cavity, so as to drive the acid liquor in the accommodating cavity to flow towards the etching container 101, so that the acid liquor in the etching container 101 fluctuates.
That is, the acid liquid supply to the etching container 101 may be a pulse system, or may be a periodic pulse system.
Wherein the baffle 111 may also be referred to as a top deck.
According to the embodiment of the invention, the traditional polysilicon cleaning mode is changed, and the loosening amplitude of the polysilicon 103 raw material is controlled by adjusting the acid supply flow.
Optionally, referring to fig. 5, the accommodating cavity includes: a first acid cavity;
the first acid cavity is composed of at least part of the cavity wall of the accommodating cavity and the baffle 111, the baffle 111 is in sliding connection with the cavity wall of the accommodating cavity and is tightly matched with the cavity wall of the accommodating cavity, and the first acid cavity is used for accommodating acid to flow to the etching container 101.
Specifically, the first acid chamber includes an acid inlet in communication with the acid supply unit 113 and an acid outlet in communication with the etching container 101.
Optionally, referring to fig. 5, the driving mechanism includes a driving motor 110 and a screw 109;
the driving motor 110 is connected with the screw 109 and is used for driving the screw 109 to rotate;
the screw 109 is connected with the baffle 111 and is used for driving the baffle 111 to slide in the accommodating cavity.
The drive motor 110 may be a variable frequency motor, and the screw 109 may be also referred to as a screw.
In the embodiment of the invention, the acid liquor pulsation unit is controlled by a screw 109 in a pushing and retreating mode, and the power source is a driving motor 110 at the tail end of the acid liquor pulsation unit. The driving motor 110 can adjust the advancing and retreating speed of the screw 109 according to actual requirements, so as to control the period and/or the amplitude of the pulsation.
Optionally, referring to fig. 5, the polysilicon cleaning device further includes: an acid liquor recovery unit 118;
the acid liquor recycling unit 118 is communicated with the etching container 101 and the acid liquor pulsation unit through a first valve 112, and is used for receiving the acid liquor flowing out of the etching container 101 and conveying the acid liquor to the acid liquor pulsation unit.
The first valve 112 is a one-way valve, the passage is an acid liquor recovery unit 118→an acid liquor pulsation unit, and the first valve 112 may also be referred to as a return liquor one-way valve.
The polysilicon 103 cleaning reaction mechanism is:
Si+2HNO 3 +6HF＝H 2 [SiF 6 ]+2HNO 2 +2H 2 O；
3Si+4HNO 3 +18HF＝3H 2 [SiF 6 ]+4NO+8H 2 O；
3Si+2HNO 3 +18HF＝3H 2 [SiF 6 ]+2NO+4H 2 O+3H 2 ；
5Si+6HNO 3 +30HF＝5H 2 [SiF 6 ]+2NO 2 +4NO+10H 2 O+3H 2 。
as can be seen from the above reaction formula, a large amount of oxynitride and hydrogen gas are generated during the cleaning of the polysilicon 103, and if the reaction gas stays in the tank body for a long time, the corresponding cleaning reaction mechanism is inhibited, so that the circulating acid liquid flow is required to carry out and release the reaction gas, and the etching reaction is promoted.
In the embodiment of the invention, the acid liquor in the etching container 101 flows outwards through the acid liquor recovery unit 118 communicated with the etching container 101 so as to bring and release the reaction gas from the etching container 101. In addition, the acid solution flowing out of the etching container 101 can return to the etching container 101 again through the acid solution recovery unit 118 and the acid solution pulsation unit, so that the acid solution is recovered and utilized, and the acid solution waste is reduced.
Further, referring to fig. 5, a third acid outlet (i.e. overflow port) 102 of the etching container 101, which is connected to the acid recovery unit 118, is located at the upper portion of the etching container 101, and the acid in the etching container 101 overflows and then enters the acid recovery unit 118.
Optionally, referring to fig. 5, the polysilicon cleaning apparatus further includes: an acid liquid supply unit 113;
the acid liquid supply unit 113 is communicated with the acid liquid recovery unit 118 through a second valve 105.
In the embodiment of the present invention, the acid solution supply unit 113 can timely supplement the acid solution consumption caused by the cleaning reaction, so as to ensure the acid solution amount in the etching container 101. Specifically, the acid liquid in the acid liquid recovery unit 118 may be replenished by the acid liquid supply unit 113 when the acid liquid in the acid liquid recovery unit 118 is lower than the acid liquid recovery level 115, or may be replenished by the acid liquid supply unit 113 when the acid liquid in the acid liquid recovery unit 118 is lower than the normal pulsating acid liquid amount.
Optionally, referring to fig. 5, the polysilicon cleaning apparatus further includes: a first acid liquid conveying pipe;
the first acid conveying pipe comprises a first acid inlet 114 and a first acid outlet, the first acid inlet 114 is communicated with the acid recovery unit 118, the first acid outlet is communicated with the acid pulsation unit, and the distance between the lowest position of the first acid inlet 114 and the bottom of the acid recovery unit 118 is larger than a preset value;
the first valve 112 is disposed on the first acid delivery pipe.
The first acid inlet 114 may also be referred to as an overflow drain. The first acid liquid outlet is connected with an acid liquid inlet of the first acid liquid cavity.
In the embodiment of the present invention, the distance between the lowest position of the first acid inlet 114 on the first acid conveying pipe, which is connected to the acid recovery unit 118, and the bottom of the acid recovery unit 118 is greater than a preset value, that is, the acid discharge mode in the acid recovery unit 118 is overflow, so that the time for settling the solid particles in the acid recovery unit 118 can be increased.
Optionally, the acid recovery unit 118 includes a second acid containing cavity and a filter plate 116, and the filter plate 116 is disposed at the bottom of the second acid containing cavity.
In the embodiment of the invention, the filter plate 116 in the acid liquor recycling unit 118 can effectively filter and settle large particles and silica powder impurities in recycled acid liquor, and reduce the influence of acid liquor fluid on bottom sediment particles when the acid liquor is discharged to the acid liquor pulsation unit.
Optionally, referring to fig. 5, the polysilicon cleaning device further includes: a solid waste collection unit 106;
the solid waste collection unit 106 is communicated with the acid liquor recovery unit 118 through a third valve 117, and is used for recovering solids in the acid liquor recovery unit 118.
Optionally, the bottom of the etching container 101 is in a conical structure, and the bottom of the etching container 101 is communicated with the solid waste collection unit 106, so as to recover the solid matters falling to the bottom in the etching container 101.
In the embodiment of the present invention, referring to fig. 5, the bottom of the etching container 101 is configured to be a conical structure, that is, the bottom of the etching container 101 is configured to be an inclined structure, so that the polysilicon 103 particles in the etching container 101 can timely slide to the solid waste collection unit 106 communicated with the bottom of the etching container 101 and timely be discharged.
Optionally, the polysilicon cleaning device further includes: a second acid liquid conveying pipe;
the second acid liquid conveying pipe comprises a second acid liquid inlet and a second acid liquid outlet, the second acid liquid inlet is communicated with the accommodating cavity, and the second acid liquid outlet is communicated with the etching container 101;
the second acid outlet is disposed at the bottom of the etching container 101, and an opening of the second acid outlet faces upwards.
In the embodiment of the present invention, the second acid outlet, which is used for connecting the acid pulsation unit and the second acid delivery pipe of the etching container 101, and is connected to the etching container 101, is disposed at the bottom of the etching container 101, and the opening of the second acid outlet is upward, so that the polysilicon 103 can fluctuate up and down in the etching container 101.
Still alternatively, referring to fig. 5, a fourth valve 108 is disposed on the second acid delivery pipe, the fourth valve 108 is a one-way valve, the passage is an acid pulsation unit→an etching container, and the fourth valve 108 may also be referred to as a liquid supply one-way valve.
Optionally, referring to fig. 5, the polysilicon cleaning device further includes: a flow distribution plate 104;
the flow distribution plate 104 is arranged in the etching container 101, the flow distribution plate 104 is arranged above the second acid liquid outlet, and the polysilicon 103 is arranged above the flow distribution plate 104;
the flow distribution plate 104 is gradually curved upward from a center position to an edge position.
In the embodiment of the present invention, the polysilicon cleaning device further includes a flow distribution plate 104 disposed at the bottom of the etching container 101 (below the polysilicon 103), where the flow distribution plate 104 is inclined. The flow distribution plate 104 is mainly used for uniformly distributing the acid solution flowing out from the second acid solution outlet of the second acid solution conveying pipe, which is beneficial to the overall stable rising of the polysilicon 103 in the etching container 101 (that is, the fluctuation of the polysilicon 103 in the etching container 101 is kept basically consistent), the dispersivity of the acid solution in the etching container 101 is enhanced, and the etching reaction rate is improved.
Optionally, referring to fig. 5, the polysilicon cleaning device further includes: a gas supply unit 119;
the gas supply unit 119 is communicated with the second acid outlet for mixing gas into the acid flowing from the accommodating chamber into the etching container 101.
Wherein the gas may be nitrogen or other inert gas.
In the embodiment of the invention, the flow of the acid liquor in the etching container 101 can be promoted by mixing the inert gas into the acid liquor in the etching container 101, so that the cleaning reaction can be further accelerated, and the cleaning of the polysilicon 103 is more complete and clean. In addition, the overflow of the reaction gas from the acid liquid can be promoted.
In the embodiment of the invention, the gas supply unit 119 is communicated with the second acid liquid inlet, and the second acid liquid inlet is arranged at the middle position of the bottom of the etching container 101, that is to say, the gas is introduced from the middle position of the bottom of the etching container 101, compared with the gas introduced from the side, the gas bubbles have small diameters and are uniformly distributed in the acid liquid, thereby being more beneficial to promoting etching cleaning reaction and improving etching cleaning efficiency and cleanliness.
Further, referring to fig. 5, the polysilicon cleaning apparatus further includes a bubble generator 107, where the bubble generator 107 is disposed in the second acid outlet.
In addition, the flow distribution plate 104 may be further used to uniformly distribute microbubbles entering the etching container 101, which is favorable for the polysilicon 103 in the etching container 101 to rise integrally and stably, strengthen the dispersibility of microbubbles in the etching container 101, and improve the etching reaction rate.
Referring to fig. 6, the acid liquid supply pulsation process is: firstly, the whole acid washing loop except the acid liquid recovery unit 118 in the polysilicon washing device is filled with acid liquid according to the standard, the driving motor 110 is started and the screw 109 is driven to rotate, the baffle 111 pushes the acid liquid in the first acid liquid cavity to advance from 0 to A and B under the action of the screw 109, the acid liquid enters the etching container 101 through the fourth valve 108, at the moment, the acid liquid cannot enter the acid liquid recovery unit 118 due to the first valve 112, and meanwhile, under the action of the bubble generator 107, the gas is sucked in due to the negative pressure and crushed under the impact of high-speed acid liquid flow and then released into the etching container 101. The rotation speed of the driving motor 110 driving the screw 109 can be adjusted according to actual demands, so as to adjust the amplitude and time of the lifting of the polysilicon 103 by the fluctuating acid liquor and the acid liquor supply. After the acid liquor of the acid liquor pulsation unit enters the etching container 101, the acid liquor in the etching container 101 overflows and is led into the acid liquor recovery unit 118 through the third acid liquor outlet 102, the acid liquor is discharged from the first acid liquor inlet 114 after being subjected to particle sedimentation through the filter plate 116 in the acid liquor recovery unit 118, the liquid level in the acid liquor recovery unit 118 after each reflux is observed, and if the liquid level is lower than the acid liquor recovery liquid level 115, the acid liquor is supplemented to the acid liquor recovery liquid level 115 through the acid liquor supply unit 113.
Referring to fig. 7, the acid reflux process is: the acid solution to be overflowed in the etching container 101 is gathered into the acid solution recovery unit 118, and the baffle 111 reaches the maximum stroke, namely, the overflow cleaning etching of the polysilicon 103 is completed once, the baffle 111 is reversely and rapidly operated by the driving motor 110, the baffle 111 is retreated from the direction C to the direction D, the acid solution in the acid solution recovery unit 118 flows through the first acid solution inlet 114 and passes through the first valve 112, and the negative pressure formed by retreating the baffle 111 is sucked into the acid solution pulsation unit and is filled up, so that preparation is made for the next pulsation overflow.
Referring to fig. 8, an embodiment of the present invention further provides a polysilicon cleaning method, which is applied to a polysilicon cleaning device, where the polysilicon cleaning device includes: an etching container 101, the etching container 101 being used for containing polysilicon 103 and acid solution, the method comprising:
step 11: the acid solution in the etching container 101 is driven to fluctuate according to a specified rule so as to drive the polysilicon 103 to fluctuate.
The etching container 101 may be a cleaning etching tank.
The polysilicon cleaning device may be any one of the polysilicon cleaning devices described above.
In the embodiment of the invention, the acid liquor in the etching container 101 is driven to pulsate according to a specified rule to drive the polysilicon 103 to fluctuate so as to accelerate the etching reaction, thereby improving the etching cleaning efficiency, shortening the process time, improving the productivity, effectively reducing the energy consumption and the liquid consumption, and having good reliability and high safety.
The polysilicon cleaning method provided by the embodiment of the invention is mainly suitable for the preparation stage of raw materials in the crystal pulling process of the single crystal furnace.
The above-described polysilicon cleaning apparatus and method are exemplified below.
Optionally, referring to fig. 1, the polysilicon cleaning device further includes: an acid liquor pulsation unit which is communicated with the etching container 101;
the step of driving the acid solution in the etching container 101 to fluctuate according to a specified rule to drive the polysilicon 103 to fluctuate includes:
the acid pulsation unit drives the acid in the etching container 101 to fluctuate in a specified rule.
The acid solution in the etching container 101 may fluctuate periodically. The polysilicon 103 fluctuation period is consistent with the acid liquid fluctuation period. For example, the acid pulsation unit drives the acid in the etching container 101 to fluctuate according to the period and the amplitude shown in fig. 2, so as to drive the polysilicon 103 in the etching container 101 to fluctuate according to the period and the amplitude shown in fig. 3, and specifically, the fluctuating effect of the polysilicon 103 in the etching container 101 is shown in fig. 4.
In addition, other problems of the etching cleaning mode that the polysilicon frame 2 moves up and down under the drive of the motor 1 (through the lifting hanging buckle 3) can be avoided, for example, the movement speed is slow, the amplitude is small (only 10-20 mm), the structure is complex, the failure rate is high, the overall etching efficiency is low, and the cleaning is not clean. That is, in the embodiment of the present invention, the acid solution in the cleaning container 101 can drive the polysilicon 103 to move rapidly, and the cleaning device has the advantages of simple structure, low failure rate, high etching cleaning efficiency and clean cleaning.
Optionally, referring to fig. 5, the acid pulsation unit includes: a housing chamber, a shutter 111, and a driving mechanism; the baffle plate is arranged 111 in the accommodating cavity, the driving mechanism is connected with the baffle plate, and the accommodating cavity is communicated with the etching container 101;
the step of driving the acid solution in the etching container 101 to fluctuate according to a specified rule by the acid solution pulsation unit includes:
the driving mechanism drives the baffle to slide in the accommodating cavity;
the baffle drives the acid liquid in the accommodating cavity to flow to the etching container 101, so that the acid liquid in the etching container 101 fluctuates.
That is, the acid liquid supply to the etching container 101 may be a pulse system, or may be a periodic pulse system.
Wherein the baffle 111 may also be referred to as a top deck.
According to the embodiment of the invention, the traditional polysilicon cleaning mode is changed, and the loosening amplitude of the polysilicon 103 raw material is controlled by adjusting the acid supply flow.
Optionally, referring to fig. 5, the accommodating cavity includes: a first acid cavity;
the first acid cavity is composed of at least part of the cavity wall of the accommodating cavity and the baffle 111, the baffle 111 is in sliding connection with the cavity wall of the accommodating cavity and is tightly matched with the cavity wall of the accommodating cavity, and the first acid cavity is used for accommodating acid to flow to the etching container 101.
Specifically, the first acid chamber includes an acid inlet in communication with the acid supply unit 113 and an acid outlet in communication with the etching container 101.
Optionally, referring to fig. 5, the driving mechanism includes a driving motor 110 and a screw 109; the driving motor 110 is connected with the screw 109; the screw 109 is connected to the baffle 111;
the step of driving the baffle plate to slide in the accommodating cavity by the driving mechanism comprises the following steps:
the driving motor 110 drives the screw 109 to rotate;
the screw 109 drives the baffle 111 to slide in the accommodating cavity.
The drive motor 110 may be a variable frequency motor, and the screw 109 may be also referred to as a screw.
In the embodiment of the invention, the acid liquor pulsation unit is controlled by a screw 109 in a pushing and retreating mode, and the power source is a driving motor 110 at the tail end of the acid liquor pulsation unit. The driving motor 110 can adjust the advancing and retreating speed of the screw 109 according to actual requirements, so as to control the period and/or the amplitude of the pulsation.
Optionally, the step of driving the acid solution in the etching container 101 to fluctuate according to a specified rule includes:
the acid solution in the etching container 101 is driven to fluctuate according to a preset period and/or a preset amplitude.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (16)
1. A polysilicon cleaning device, comprising:
an etching container for containing polysilicon and an acid solution;
the acid liquor pulsation unit is communicated with the etching container and is used for driving acid liquor in the etching container to fluctuate according to a specified rule so as to drive the polysilicon to fluctuate;
the acid liquor pulsation unit includes: a receiving chamber, a baffle, and a drive mechanism;
the accommodating cavity is communicated with the etching container, and the baffle is arranged in the accommodating cavity;
the driving mechanism is connected with the baffle and is used for driving the baffle to slide in the accommodating cavity and driving the acid liquor in the accommodating cavity to flow to the etching container so as to enable the acid liquor in the etching container to fluctuate.
2. The device of claim 1, wherein the receiving cavity comprises: a first acid cavity;
the first acid liquor cavity is composed of at least part of cavity walls of the accommodating cavity and the baffle, the baffle is in sliding connection with the cavity walls of the accommodating cavity and is tightly matched with the cavity walls of the accommodating cavity, and the first acid liquor cavity is used for accommodating acid liquor to flow to the etching container.
3. The apparatus of claim 1, wherein the drive mechanism comprises a drive motor and a screw;
the driving motor is connected with the screw rod and used for driving the screw rod to rotate;
the screw rod is connected with the baffle and used for driving the baffle to slide in the accommodating cavity.
4. The apparatus as recited in claim 1, further comprising: an acid liquor recovery unit;
the acid liquor recovery unit is communicated with the etching container and the acid liquor pulsation unit through a first valve, and is used for receiving acid liquor flowing out of the etching container and conveying the acid liquor to the acid liquor pulsation unit.
5. The apparatus as recited in claim 4, further comprising: an acid liquid supply unit;
the acid liquor supply unit is communicated with the acid liquor recovery unit through a second valve.
6. The apparatus as recited in claim 4, further comprising: a first acid liquid conveying pipe;
the first acid liquid conveying pipe comprises a first acid liquid inlet and a first acid liquid outlet, the first acid liquid inlet is communicated with the acid liquid recovery unit, the first acid liquid outlet is communicated with the acid liquid pulsation unit, and the distance between the lowest position of the first acid liquid inlet and the bottom of the acid liquid recovery unit is larger than a preset value;
the first valve is arranged on the first acid liquid conveying pipe.
7. The apparatus of claim 4, wherein the acid recovery unit comprises a second acid receiving chamber and a filter plate disposed at a bottom of the second acid receiving chamber.
8. The apparatus as recited in claim 4, further comprising: a solid waste collection unit;
the solid waste collecting unit is communicated with the acid liquor recycling unit through a third valve and is used for recycling solids in the acid liquor recycling unit.
9. The device according to claim 8, wherein the bottom of the etching container is of a conical structure, and the bottom of the etching container is communicated with the solid waste collecting unit and is used for recovering solid matters falling to the bottom in the etching container.
10. The apparatus as recited in claim 1, further comprising: a second acid liquid conveying pipe;
the second acid liquid conveying pipe comprises a second acid liquid inlet and a second acid liquid outlet, the second acid liquid inlet is communicated with the accommodating cavity, and the second acid liquid outlet is communicated with the etching container;
the second acid liquid outlet is arranged at the bottom of the etching container, and an opening of the second acid liquid outlet faces upwards.
11. The apparatus as recited in claim 10, further comprising: a flow distribution plate;
the flow distribution plate is arranged in the etching container, the flow distribution plate is arranged above the second acid liquid outlet, and the polysilicon is positioned above the flow distribution plate;
the flow distribution plate is gradually bent upwards from a central position to an edge position.
12. The apparatus as recited in claim 10, further comprising: a gas supply unit;
the gas supply unit is communicated with the second acid liquid outlet and is used for mixing gas into the acid liquid flowing into the etching container from the accommodating cavity.
13. A polysilicon cleaning method applied to a polysilicon cleaning device, characterized in that the polysilicon cleaning device comprises: an etching container for containing polysilicon and an acid solution, the method comprising:
driving the acid liquor in the etching container to fluctuate according to a specified rule so as to drive the polysilicon to fluctuate;
the polysilicon cleaning device further comprises: the acid liquor pulsation unit is communicated with the etching container and comprises: a receiving chamber, a baffle, and a drive mechanism; the accommodating cavity is communicated with the etching container, and the baffle is arranged in the accommodating cavity; the driving mechanism is connected with the baffle and is used for driving the baffle to slide in the accommodating cavity and driving the acid liquor in the accommodating cavity to flow to the etching container so as to enable the acid liquor in the etching container to fluctuate;
the step of driving the acid liquid in the etching container to fluctuate according to a specified rule so as to drive the polysilicon to fluctuate comprises the following steps:
the acid liquor pulsation unit drives the acid liquor in the etching container to fluctuate according to a specified rule.
14. The method of claim 13, wherein the acid pulsing unit comprises: the device comprises a containing cavity, a baffle and a driving mechanism, wherein the baffle is arranged in the containing cavity, the driving mechanism is connected with the baffle, and the containing cavity is communicated with the etching container;
the step of driving the acid liquor in the etching container to fluctuate according to a specified rule by the acid liquor pulsation unit comprises the following steps:
the driving mechanism drives the baffle to slide in the accommodating cavity;
the baffle drives the acid liquor in the accommodating cavity to flow to the etching container so as to enable the acid liquor in the etching container to fluctuate.
15. The method of claim 14, wherein the drive mechanism comprises a drive motor and a screw; the driving motor is connected with the screw rod; the screw is connected with the baffle;
the step of driving the baffle plate to slide in the accommodating cavity by the driving mechanism comprises the following steps:
the driving motor drives the screw to rotate;
the screw drives the baffle to slide in the accommodating cavity.
16. The method of any one of claims 13 to 15, wherein the step of driving the acid within the etching container to fluctuate at a specified rate comprises:
and driving the acid liquor in the etching container to fluctuate according to a preset period and/or a preset amplitude.
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| CN202010356974.9A CN111524834B (en) | 2020-04-29 | 2020-04-29 | Polysilicon cleaning device and method |
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| CN202010356974.9A CN111524834B (en) | 2020-04-29 | 2020-04-29 | Polysilicon cleaning device and method |
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| CN112893282A (en) * | 2021-01-28 | 2021-06-04 | 西安奕斯伟硅片技术有限公司 | Polysilicon cleaning and recycling pretreatment unit, cleaning machine and cleaning method |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58123730A (en) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | Semiconductor wafer etching device |
| JPS6196772A (en) * | 1984-10-17 | 1986-05-15 | Toshiba Corp | Surface treating method of semiconductor substrate for solar battery |
| JPH02194528A (en) * | 1989-01-21 | 1990-08-01 | Tokin Corp | Method and apparatus for etching treatment of silicon wafer |
| JP2000107710A (en) * | 1998-09-30 | 2000-04-18 | Dainippon Screen Mfg Co Ltd | Ultrasonic substrate treatment apparatus |
| JP2001271180A (en) * | 2000-03-28 | 2001-10-02 | Enhama:Kk | Etching system and ultrasonic vibrating device for etching solution |
| JP2001284305A (en) * | 2000-03-29 | 2001-10-12 | Semiconductor Leading Edge Technologies Inc | Wet-cleaning apparatus and wet-etching method |
| TW200520026A (en) * | 2003-07-24 | 2005-06-16 | Chemtrace Prec Cleaning Inc | Cleaning masks |
| JP2008211038A (en) * | 2007-02-27 | 2008-09-11 | Dainippon Screen Mfg Co Ltd | Substrate-treating device |
| CN106128983A (en) * | 2016-08-30 | 2016-11-16 | 上海华力微电子有限公司 | A kind of wet-cleaning tank improving cleaning efficiency and cleaning method thereof |
| CN207154289U (en) * | 2016-10-31 | 2018-03-30 | 辽宁工程技术大学 | Ultrasonic cleaning equipment |
| CN108807172A (en) * | 2018-06-05 | 2018-11-13 | 陈涛 | A kind of semiconductor diode production technology |
| CN109772805A (en) * | 2019-01-25 | 2019-05-21 | 李爱根 | A kind of production silicon single crystal rod acid dip pickle used for solar batteries |
| CN209094013U (en) * | 2018-10-31 | 2019-07-12 | 德淮半导体有限公司 | A kind of wet-cleaning device |
| CN210125599U (en) * | 2019-06-20 | 2020-03-06 | 山东大海新能源发展有限公司 | Polycrystalline silicon material belt cleaning device |
| CN110943006A (en) * | 2018-09-21 | 2020-03-31 | 株式会社斯库林集团 | Substrate processing apparatus and substrate processing method |
| CN111081609A (en) * | 2019-12-26 | 2020-04-28 | 西安奕斯伟硅片技术有限公司 | Cleaning and etching system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007059868A (en) * | 2005-07-28 | 2007-03-08 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
-
2020
- 2020-04-29 CN CN202010356974.9A patent/CN111524834B/en active Active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58123730A (en) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | Semiconductor wafer etching device |
| JPS6196772A (en) * | 1984-10-17 | 1986-05-15 | Toshiba Corp | Surface treating method of semiconductor substrate for solar battery |
| JPH02194528A (en) * | 1989-01-21 | 1990-08-01 | Tokin Corp | Method and apparatus for etching treatment of silicon wafer |
| JP2000107710A (en) * | 1998-09-30 | 2000-04-18 | Dainippon Screen Mfg Co Ltd | Ultrasonic substrate treatment apparatus |
| JP2001271180A (en) * | 2000-03-28 | 2001-10-02 | Enhama:Kk | Etching system and ultrasonic vibrating device for etching solution |
| JP2001284305A (en) * | 2000-03-29 | 2001-10-12 | Semiconductor Leading Edge Technologies Inc | Wet-cleaning apparatus and wet-etching method |
| TW200520026A (en) * | 2003-07-24 | 2005-06-16 | Chemtrace Prec Cleaning Inc | Cleaning masks |
| JP2008211038A (en) * | 2007-02-27 | 2008-09-11 | Dainippon Screen Mfg Co Ltd | Substrate-treating device |
| CN106128983A (en) * | 2016-08-30 | 2016-11-16 | 上海华力微电子有限公司 | A kind of wet-cleaning tank improving cleaning efficiency and cleaning method thereof |
| CN207154289U (en) * | 2016-10-31 | 2018-03-30 | 辽宁工程技术大学 | Ultrasonic cleaning equipment |
| CN108807172A (en) * | 2018-06-05 | 2018-11-13 | 陈涛 | A kind of semiconductor diode production technology |
| CN110943006A (en) * | 2018-09-21 | 2020-03-31 | 株式会社斯库林集团 | Substrate processing apparatus and substrate processing method |
| CN209094013U (en) * | 2018-10-31 | 2019-07-12 | 德淮半导体有限公司 | A kind of wet-cleaning device |
| CN109772805A (en) * | 2019-01-25 | 2019-05-21 | 李爱根 | A kind of production silicon single crystal rod acid dip pickle used for solar batteries |
| CN210125599U (en) * | 2019-06-20 | 2020-03-06 | 山东大海新能源发展有限公司 | Polycrystalline silicon material belt cleaning device |
| CN111081609A (en) * | 2019-12-26 | 2020-04-28 | 西安奕斯伟硅片技术有限公司 | Cleaning and etching system |
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