CN111512455B - 隧道磁阻效应膜以及使用其的磁装置 - Google Patents
隧道磁阻效应膜以及使用其的磁装置 Download PDFInfo
- Publication number
- CN111512455B CN111512455B CN201880083967.7A CN201880083967A CN111512455B CN 111512455 B CN111512455 B CN 111512455B CN 201880083967 A CN201880083967 A CN 201880083967A CN 111512455 B CN111512455 B CN 111512455B
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- CN
- China
- Prior art keywords
- layer
- magnetoresistance effect
- tunnel magnetoresistance
- effect element
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 202
- 230000000694 effects Effects 0.000 title claims abstract description 55
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 94
- 230000008878 coupling Effects 0.000 claims abstract description 86
- 238000010168 coupling process Methods 0.000 claims abstract description 86
- 238000005859 coupling reaction Methods 0.000 claims abstract description 86
- 230000005290 antiferromagnetic effect Effects 0.000 claims abstract description 79
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims description 30
- 229910019041 PtMn Inorganic materials 0.000 claims description 28
- 229910019026 PtCr Inorganic materials 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 230000015654 memory Effects 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 abstract description 15
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 381
- 238000000137 annealing Methods 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 21
- 230000005415 magnetization Effects 0.000 description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 229910052742 iron Inorganic materials 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910020598 Co Fe Inorganic materials 0.000 description 3
- 229910002519 Co-Fe Inorganic materials 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 1
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 229910002835 Pt–Ir Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0094—Sensor arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-249084 | 2017-12-26 | ||
| JP2017249084 | 2017-12-26 | ||
| PCT/JP2018/046842 WO2019131394A1 (ja) | 2017-12-26 | 2018-12-19 | トンネル磁気抵抗効果膜ならびにこれを用いた磁気デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111512455A CN111512455A (zh) | 2020-08-07 |
| CN111512455B true CN111512455B (zh) | 2024-04-02 |
Family
ID=67067379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880083967.7A Active CN111512455B (zh) | 2017-12-26 | 2018-12-19 | 隧道磁阻效应膜以及使用其的磁装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11476413B2 (ja) |
| JP (1) | JP7022766B2 (ja) |
| CN (1) | CN111512455B (ja) |
| WO (1) | WO2019131394A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111033779B (zh) * | 2017-08-14 | 2023-11-14 | 阿尔卑斯阿尔派株式会社 | 交换耦合膜以及使用该交换耦合膜的磁阻效应元件及磁检测装置 |
| US11626451B2 (en) * | 2019-06-17 | 2023-04-11 | Intel Corporation | Magnetic memory device with ruthenium diffusion barrier |
| JP7435057B2 (ja) * | 2020-03-10 | 2024-02-21 | Tdk株式会社 | 磁気抵抗効果素子 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002303536A (ja) * | 2001-04-03 | 2002-10-18 | Alps Electric Co Ltd | 回転角検出センサ |
| JP2003338644A (ja) * | 2001-11-19 | 2003-11-28 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
| CN111033779A (zh) * | 2017-08-14 | 2020-04-17 | 阿尔卑斯阿尔派株式会社 | 交换耦合膜以及使用该交换耦合膜的磁阻效应元件及磁检测装置 |
| CN111052424A (zh) * | 2017-09-27 | 2020-04-21 | 阿尔卑斯阿尔派株式会社 | 交换耦合膜以及使用该交换耦合膜的磁阻效应元件及磁检测装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1382046B1 (de) * | 2001-02-23 | 2011-11-02 | International Business Machines Corporation | Verbindungen mit riesenmagnetwiderstand und spinpolarisiertem tunneln, ihre herstellung und verwendung |
| JP3794470B2 (ja) * | 2001-04-18 | 2006-07-05 | Ｔｄｋ株式会社 | 薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置 |
| JP2003016620A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 磁気記録媒体、磁気記録装置および磁気記録方法 |
| US7023670B2 (en) * | 2001-11-19 | 2006-04-04 | Alps Electric Co., Ltd. | Magnetic sensing element with in-stack biasing using ferromagnetic sublayers |
| JP4826097B2 (ja) * | 2005-02-23 | 2011-11-30 | Ｔｄｋ株式会社 | 磁気検出素子及びその製造方法 |
| JP4483666B2 (ja) * | 2005-04-08 | 2010-06-16 | Ｔｄｋ株式会社 | 磁気検出素子及びその製造方法 |
| US8125745B2 (en) * | 2006-04-27 | 2012-02-28 | Japan Science And Technology Agency | Magnetic thin film, and magnetoresistance effect device and magnetic device using the same |
| JP2009004692A (ja) * | 2007-06-25 | 2009-01-08 | Fujitsu Ltd | 磁気抵抗効果素子及びその製造方法 |
| EP2284553B1 (en) | 2009-07-31 | 2012-06-20 | TDK Corporation | Magneto-resistance effect element and sensor |
| KR101042338B1 (ko) * | 2009-10-08 | 2011-06-17 | 한국과학기술연구원 | 자기터널접합 디바이스 및 그 제조 방법 |
| JP2014060297A (ja) * | 2012-09-18 | 2014-04-03 | Toshiba Corp | 磁気抵抗効果素子 |
| WO2019142635A1 (ja) * | 2018-01-17 | 2019-07-25 | アルプスアルパイン株式会社 | 磁気検出装置およびその製造方法 |
| US11088318B2 (en) * | 2018-04-06 | 2021-08-10 | Everspin Technologies, Inc. | Spin orbit torque magnetoresistive devices and methods therefor |
| JP7127152B2 (ja) * | 2018-11-28 | 2022-08-29 | アルプスアルパイン株式会社 | 静電容量センサ |
| CN113016086B (zh) * | 2018-12-27 | 2024-01-02 | 阿尔卑斯阿尔派株式会社 | 交换耦合膜、和利用其的磁阻效应元件以及磁检测装置 |
| JP7493389B2 (ja) * | 2020-06-10 | 2024-05-31 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
-
2018
- 2018-12-19 CN CN201880083967.7A patent/CN111512455B/zh active Active
- 2018-12-19 JP JP2019561583A patent/JP7022766B2/ja active Active
- 2018-12-19 WO PCT/JP2018/046842 patent/WO2019131394A1/ja active Application Filing
-
2020
- 2020-06-23 US US16/909,656 patent/US11476413B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002303536A (ja) * | 2001-04-03 | 2002-10-18 | Alps Electric Co Ltd | 回転角検出センサ |
| JP2003338644A (ja) * | 2001-11-19 | 2003-11-28 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
| CN111033779A (zh) * | 2017-08-14 | 2020-04-17 | 阿尔卑斯阿尔派株式会社 | 交换耦合膜以及使用该交换耦合膜的磁阻效应元件及磁检测装置 |
| CN111052424A (zh) * | 2017-09-27 | 2020-04-21 | 阿尔卑斯阿尔派株式会社 | 交换耦合膜以及使用该交换耦合膜的磁阻效应元件及磁检测装置 |
Non-Patent Citations (1)
| Title |
|---|
| B.Dai 等."Improved pinning effect in PtMn/NiFe system by Cr addition into PtMn".《Aplied Physics Letters》.2004,第第88卷卷(第第88卷期),5281-5283. * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2019131394A1 (ja) | 2020-11-19 |
| WO2019131394A1 (ja) | 2019-07-04 |
| CN111512455A (zh) | 2020-08-07 |
| US20200328344A1 (en) | 2020-10-15 |
| US11476413B2 (en) | 2022-10-18 |
| JP7022766B2 (ja) | 2022-02-18 |
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