CN111491462A - 固晶结构及其制造方法 - Google Patents

固晶结构及其制造方法 Download PDF

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Publication number
CN111491462A
CN111491462A CN202010076484.3A CN202010076484A CN111491462A CN 111491462 A CN111491462 A CN 111491462A CN 202010076484 A CN202010076484 A CN 202010076484A CN 111491462 A CN111491462 A CN 111491462A
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Prior art keywords
layer
target substrate
energy beam
die attach
semiconductor elements
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CN202010076484.3A
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English (en)
Inventor
谢明勋
廖世安
苏英阳
刘欣茂
王子翔
蒲计志
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Epistar Corp
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Epistar Corp
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Publication of CN111491462A publication Critical patent/CN111491462A/zh
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract

本发明公开一种固晶结构及其制造方法。所述固晶制造方法包含提供目标基板，其中目标基板包含支撑基板以及电路结构形成在支撑基板的一侧，其中电路结构包含玻璃板形成在支撑基板上，透明导电层形成在玻璃板上，金属层形成在透明导电层上，粘合增强电路层形成在金属层上，以及多个电接触点形成在粘合增强电路层上；提供多个半导体元件粘附到承载板上并且彼此间具有一间隙隔开，每个半导体元件具有一电极对与目标基板上的电路结构的两对应的电接触点对准；以及提供能量束产生器产生能量束，用于在加热循环中通过由能量束携带的热能，来接合和电连接其中一个半导体元件的电极对以及与其对准的电接触点。

Description

固晶结构及其制造方法
技术领域
本发明涉及一种固晶方法及固晶结构，尤其是涉及一种使用能量束发射设备产生能量以固晶的方法及结构。
背景技术
近来发光二极管(LED)和液晶显示器(LCD)产业里上流行的术语之一是“局部调光”。从字义上解释，局部调光可以使需要的屏幕区域变暗，同时使屏幕上需要明亮的部分保持明亮。这项技术可以真正提高对比度和3D色域，从而获得更好的显像效果。如此，液晶电视加入局部调光的技术后，在提供高清分辨率的影像时，液晶电视可以与有机发光二极管(OLED)电视匹敌。
但是，为了达到局部调光的目的必须安装大量的LED在背光模块上，此与传统的侧投式电视和直下式电视中采用的手法不同。因此，需要大尺寸的电路板来安装此大量的LED，而从统计学上讲，这样做可能导致LED的固晶良率低落的问题。解决问题的一个对策是使用多层电路板。然而，由于多层电路板是由FR-4(Flame Retardant)或BT(Bismaleimide-Triazine)树脂以及形成其上的铜导体所构成，在回流焊接(Reflow Soldering)后时常发生翘曲(Warppage)问题。
发明内容
本发明的一个目的是提供一种将半导体元件键合在目标基板上的固晶方法和结构，以解决常规回流工艺中的印刷电路板翘曲问题，并确保半导体元件与目标基板之间有较高的键合强度。
为了达到上述目的，固晶的方法包括以下步骤：
(a)提供其上形成有电路结构的目标基板和多个半导体元件；电路结构具有形成在其上的多个电接触点和一玻璃板，并且每个半导体元件包括一对电极；
(b)将多个半导体元件放置在目标基板上，每个半导体元件的一对电极与目标基板的两个对应的电接触点对准；以及
(c)施加至少一个能量束，以在加热周期中通过由能量束携带的热能来接合和电连接至少一个半导体元件的一对电极以及与其对准的对应电接触点。
优选地，步骤(a)还包括：
决定固晶类型，其中固晶的类型与固晶材料设置的位置以及固晶材料的数量有关。
当固晶材料包括一结合材料，且固晶材料是在步骤(a)前预先形成在目标基板的电路结构的电接触点上，此为第一固晶类型；
当固晶材料包括一结合材料，且固晶材料是在步骤(a)前预先形成在半导体元件的一对电极上，此为第二固晶类型；
当固晶材料包括一结合材料，且在步骤(a)中，将固晶材料形成在目标基板的电路结构的电接触点上，为第三固晶类型；
当固晶材料包括两部分结合材料，其中一部分结合材料在步骤(a)前预先形成在半导体元件的一对电极上，另一部分结合材料在步骤(a)中形成在电接触点上，此为第四固晶类型。
在第一固晶类型中，固晶材料在步骤(a)前预先形成在目标基板的电接触点上；
在第二固晶类型中，固晶材料在步骤(a)前预先形成在半导体元件的一对电极上；
在第三固晶类型中，固晶材料在步骤(a)中形成在目标基板的电接触点上；
在第四固晶类型中，固晶材料包含一第一结合材料以及一第二结合材料，第一材料在步骤(a)前预先形成在半导体元件的一对电极上，以及第二材料在步骤(a)中形成在目标基板的电接触点上。
优选地，在第一固晶类型中，固晶材料为熔点在140℃至300℃范围内的焊料，其包含选自锡、钛、铟和银群组的金属、选自上述金属的合金或叠层。
优选地，在第二固晶类型中，固晶材料为熔点在140℃至300℃范围内的焊料，其包含选自锡，、钛，、铟和银群组的金属中的一种金属，、该选自上述金属的合金选自金属组或堆叠层。
优选地，在第三固晶类型中，固晶材料为含有绝缘粘合剂或含有助熔剂的粘合剂，或含有选自包括锡，钛，铟和银的金属中的一种的金属颗粒的粘合剂的结合材料。
优选地，在第四固晶类型中，固晶材料中第一结合材料为锡或锡银的金属层，第二结合材料为助焊剂或绝缘粘合剂，例如环氧树脂或硅树脂。
上述固晶方法包含产生一个或多个能量束用以加热并电连接多个半导体元件的电极对和目标基板的电路结构中与电极对相对应的电接触点，以及将固晶材料施加到半导体元件和电路结构上的各种方式，如此可利用能量束将热传递到目标基板上以达到点状分散地加热目标基板的优点，从而大幅地减少了在传统回流工艺中印刷电路板的翘曲问题，并利用各种不同的方式和不同的接合材料来提高半导体元件与目标基板上电路结构之间的接合强度。
为了达到上述目的，固晶结构包括一目标基板、多个半导体元件以及一射线产生器。
目标基板具有一支撑基板以及一电路结构。
电路结构形成在支撑基板的一侧上，且具有一玻璃板、一透明导电层、一金属层、一粘合增强电路层以及多个电接触点。
玻璃板形成在支撑基板上。
透明导电层形成在玻璃板上。
金属层形成在透明导电层上。
粘合增强电路层形成在金属层上。
多个电接触点形成在粘合增强电路层上。
多个半导体元件被固定到一承载板上且彼此之间具有一间隙隔开。每个半导体元件具有一对电极与目标基板的电路结构的两个对应的电接触点对准。
在一加热循环中，射线产生器产生至少一个能量束，通过其所携带的热能来接合和电连接至少一个半导体元件的电极以及与其对准的对应电接触点。
上述的固晶结构中，射线产生器产生至少一个能量束并用以加热并电连接多个半导体元件以及目标基板的电路结构，能量束可携带热能均匀地分布在目标基板上以达到点状散布的加热模式，解决了印刷电路板翘曲的问题，并对于半导体元件和目标基板的电路结构之间提供更高的接合强度，因为针对传统的玻璃上的芯片(chip on glass)电路、各种固晶材料以及各种施加固晶材料方法的缺点，可定制电路的设计以提高目标基板与半导体元件之间固晶结构的接合强度。
后续实施方式结合附图，将进一步地说明本发明案的其他目的、优点以及新颖的特征。
附图说明
图1为本发明的固晶制造方法示意图；
图2为图1中的固晶结构的射线产生器与目标基板相邻并产生能量束的示意图；
图3为本发明的固晶结构中射线产生器的实施例的示意图，射线产生器产生能量束以加热半导体元件和对应的电接触点；
图4为本发明的固晶结构中射线产生器的另一实施例的示意图，射线产生器产生多个能量束以分别加热多个半导体元件和对应的电接触点；
图5与图5A为本发明第一实施例的固晶结构中半导体元件的一对电极上预先形成的接合材料示意图；
图6与图6A为本发明另一实施例的固晶结构中各电接触点上涂敷接合材料的示意图；
图7与图7A为本发明另一实施例的固晶结构中，分别在每个电极及对应电接触点上预先形成两种接合材料的示意图；
图8为图1中的固晶结构中目标基板的电路结构的第一实施例的示意图；
图9为图1中的固晶结构中目标基板的电路结构的第二实施例的示意图；
图10为图1中的固晶结构中目标基板的电路结构的第三实施例的示意图；
图11为图1中的固晶结构中目标基板的电路结构的第四实施例的示意图；
图12为图1中的固晶结构中目标基板的电路结构的第五实施例的示意图；
图13为图1中的固晶结构中目标基板的电路结构的第六实施例的示意图；
图14为图1中固晶结构的目标基板具有背面反射层的电路结构的第七实施例的示意图；
图15为图14中背面反射层的第一实施方式的示意图；
图16为图14中背面反射层的第二实施方式的示意图；
图17为本发明的固晶方法的流程图；
图18A和图18B为图17中关于提供具有电路和多个半导体元件的目标基板的子步骤流程图；
图19为图17中提供至少一个能量束的子步骤相关的实施例的流程图；
图20A至图20E为一与半导体元件转移步骤相关的实施例的示意图；
图21A至图21E为另一与半导体元件转移步骤相关的实施例的示意图。
符号说明
10目标基板
11压模
12突出部
13粘着胶层
131 接触部
132 被未接触部
20半导体元件
21电极对
22发光叠层
30支撑基座
40电路结构
40a 电接触点
41玻璃板
42透明导电层
43金属层
44结合层
45共金层
46辅助结合层
47湿润层
48第一复合层
49第二复合层
43' 第一增强电路层
44' 绝缘层
45' 第二增强电路层
441 通孔
50能量束产生器
51、51' 能量束
60背面反射器
62反射层
63保护膜
64绝缘介电层
70载体板
80A 焊料
80C 粘合剂
80E 金属层
80F 粘合剂
80P 金属颗粒
81电连接通道
90胶带
S101 步骤
S102 步骤
S103 步骤
S1010 步骤
S1011步骤
S10111 步骤
S10112 步骤
S10113 步骤
S1012 步骤
S1013 步骤
S1014 步骤
S1015 步骤
S10151 步骤
S10152 步骤
S1031 步骤
S1032 步骤
具体实施方式
图1是根据本发明第一实施例的使用能量束制作的固晶结构的固晶制造方法示意图，包括一目标基板10、一多个半导体元件20和一能量束产生器50。
目标基板10具有一支撑基座30和一电路结构40。支撑基座30对于能量束为透明，可以由玻璃环氧树脂层压材料，例如FR4和BT(Bismaleimide Triazine)印刷电路板(PCB)，或玻璃基板制成。电路结构40形成在支撑基座30的一侧上并且具有多个电接触点40a。目标基板10包含印刷电路板(例如柔性印刷电路板)、玻璃电路板或具有薄膜晶体管(TFT)电路或脉冲宽度调频(PWM)驱动电路的背板。
多个半导体元件20以矩阵的形式附接到一载体板70上，并且相邻的半导体元件20之间彼此以一间隙隔开。每一个半导体元件20具有一电极对21，其中电极对21包含至少两电极。间隙可以包括水平间距和垂直间距。换句话说，多个半导体元件20可以分别以水平间距和垂直间距以水平和垂直间隔放置，每个半导体元件20的电极对21与目标基板10上的各个电触点40a对准。半导体元件20包括一发光二极管(LED)具有一对电极21和一发光叠层22，其中发光二极管可以具有一成长基板或一粘接合基板用以支撑发光叠层22。
能量束产生器50产生至少一个能量束51，当每个半导体元件20的电极对21与目标基板10上对应的电接触点40a对准后，在一加热周期中，半导体元件20的电极对21和相应的电接触点40a被能量束51提供的热能加热直到接合并且电连接为止。
根据加热和制造状况，能量束产生器50可以放置在与半导体元件20同一侧上并且紧邻半导体元件20，或者可以放置在与目标基板10同一侧上并且紧邻支撑基座30。如图1所示，当将能量束产生器50放置在多个半导体元件20的旁边时，在一加热周期中，能量束51携带的热能首先传到其中一个半导体元件20后，然后再传到半导体元件20的电极对21以及与其对应的电接触点40a之间的接合处。在部分情况下，集成电路(IC)芯片已经预先被接合到目标基板10的支撑基座30上且位于具有电路结构40相对侧的表面上；在这种情况下，当将半导体元件20接合在目标基板10的电路结构40上，通过传统的回流焊接来完成时，集成电路(IC)芯片和目标基板10之间的结合强度可能会因为回流焊接制作工艺而变弱，而且在某些情况下需要重复多次的回流焊接，使得结合强度会变得更糟。与传统的回流焊接制作工艺中的将目标基板10整面加热不同，本发明所揭露的由能量束51完成的固晶加热制作工艺是提供矩阵分布的加热点，仅有轻微的热会影响集成电路(IC)芯片和目标基板10之间键合，尤其当能量束51与半导体元件20位于同一侧时，每个能量束51提供的大部分热能都会被相应的半导体元件20和目标基板10所吸收。
能量束51携带的部分热能被相应半导体元件20吸收。如图2所示，当将能量束产生器50放置于紧邻目标基板10与支撑基座30同一侧时，如果支撑基座30对能量束51是透明的，除非被支撑基座30折射，否则在加热周期中产生大部分的能量束51会穿过目标基板10的支撑基座30，然后将热能传播到对应的半导体元件20的电极对21以及相应的电路结构40的电接触点40a。因为目标基板10的支撑基座30对于能量束51是透明的，意即支撑基座30不会吸收能量束51的能量，除了一小部分的能量束51被折射转向而未照射在目标的电极对21和电接触点40a上，其余大部分的被能量束51会照射到目标的电极对21和电接触点40a上，从而将热能传递到目标的电极对21和电接触点40a。因此，当将能量束产生器50放置于紧邻目标基板10与支撑基座30同一侧时，由于目标基板10对能量束51的低吸收率可以有效率地将热能传递到目标的电极对21和电接触点40a上，得以缩短加热周期并提高固晶制造方法的效率。此外，由于热能没有流过半导体元件20中除了电极对21以外的部分，所以可以减轻由于能量束51的加热作用而对半导体元件20的影响。
关于能量束51的数量和照射方式，如图1所示的实施例，由能量束产生器50产生的一个能量束51进行加热的制作工艺，在加热周期中，能量束51一次通过一个导体元件20，依序地将每一半导体元件20的电极对21与目标基板10上对应的电接触点40a加热并电连接。在另一实施例中，参考图3，由能量束产生器50产生一个能量束51，在加热周期中，一个能量束51一次通过至少两个半导体元件20，将此两个半导体元件20的电极对21与目标基板10上相应的电接触点40a加热并电连接。在另一个实施例中，参考图4，在加热周期中，由能量束产生器50产生的至少两个能量束51，分别施加在至少两个半导体元件20上，以分别加热和电连接至少两个半导体元件20的电极对21和目标基板10上对应的电接触点40a。上述实施例中提到的加热周期的持续时间，介于0.001秒至1秒的范围内。上述能量束51的类型包含紫外(UV)激光光束、可见光激光光束和红外(IR)激光光束之一的激光光束。当能量束51为红外激光光束时，其波长介于1,000纳米(nm)至2,000纳米(nm)的范围内。在另一实施例中，由能量束产生器50产生的至少两个能量束51可同时施加在同一个半导体元件20上(图未示)，以缩短加热的周期，或使用较低能量的能量束51以降低加热过程中对半导体元件20所引发的冲击。
在继续以下实施例之前，预先定义后续使用特定术语的意义。“预形成固晶材料在电接触点40a或电极对21之上”，表示在目标基板10或相应的半导体元件20的制造过程中，固晶材料是预先形成在目标基板10或相应的半导体元件20上的。“在电接触点40a上施加固晶材料”，表示在目标基板10与多个半导体元件20对准之前，将固晶材料施加到目标基板10的电接触点40a上。为了提高接合强度并在制造中便于将半导体元件20接合至目标基板10，可采用多种类型的固晶材料及其施加方式，并将其施加至目标基板10、半导体元件20以及目标基板10的多个电接触点40a与半导体元件20的相应电极对21之间。
在一实施例中，参照图5和图5A，焊料80A预先形成在每个半导体元件20的电极对21上或在电路结构40的每个电接触点40a上，其中焊料80A的熔点在140℃至300℃的范围内并且包括锡、钛、铟、银、或上述金属的合金或叠层。
在一实施例中，参照图6和图6A，将包含绝缘粘合剂和选自包括锡、钛、铟、银之中的一种的金属颗粒80P的粘合剂80C施加至电路结构40的每一个电接触点40a。绝缘粘合剂，例如环氧树脂和硅树脂之类的胶材，将半导体元件20牢固地形成在目标基板10上，并有助于将固晶材料轻易地散布在电极对21与相应电接触点40a之间的接合处，并通过加热半导体元件20，使得粘合剂80C中的金属颗粒80P能够聚集并在电极对21和对应的电接触点40a之间形成电连接通道81。
在另一实施例中，如图7和图7A所示，在每个半导体元件20的电极对21上预先形成包含锡或锡银的金属层80E，并且将粘合剂80F，例如环氧树脂或硅树脂，施加到目标基板10的电接触点40a上。然后，将电极对21与相应的电触点40a对准。在此实施例中，粘合剂80F更包括助焊剂，助焊剂用于润湿和清洁金属层80E，并保护金属层80E免于氧化。在此实施例揭露的固晶制造方法的最后，助焊剂蒸发，剩下的是粘合剂80F中的环氧树脂或硅树脂以及金属层80E，由于能量束51携带的热能使金属层80E熔化，当金属层80E处于熔化状态时会接触到相应的电接触点40a，并在电极对21和相应的电接触点40a之间形成电连接通道81。
当施加粘合剂80F后，能量束51照射半导体元件20时，金属层80E开始熔化并且自动聚集在相应的电极对21和电触点40a之间并建立起电连接通道81。然后，由能量束51携带的热能再被传递到粘合剂80F以使其固化，而此时电连接通道81在粘合剂80F固化之前已经形成。若是改为使用传统的回流焊炉进行加热时，由于粘合剂80F在回流焊炉的加热过程中被持续加热，因此在金属层80E所形成的电连接通道81完整成型前，粘合剂80F中的环氧树脂或硅树脂早已固化。但是，这样的不完全成型的电连接通道81可能导致不希望遇到的开路问题。上述实施例中所揭露的形成电连接通道81的模式，可以适用于图6和图6A所揭露含有金属颗粒80P的粘合剂80C的实施例。粘合剂80C在被能量束51加热之后，在粘合剂80C中的绝缘粘合剂完全固化之前，粘合剂80C中的金属颗粒80P自动在相应的电极对21和电接触点40a之间建立好电连接通道81。由于粘合剂80C与粘合剂80F的固化时间晚于电连接通道81完全成型的时间，因此本发明中所揭露用能量束51加热固晶材料的方式，可确保电连接通道81的成功率或固晶制造方法的成功率高于使用传统回流焊炉的加热方式。
玻璃基板芯片接合(Chip on Glass,COG)电路常见于薄膜晶体管液晶显示器(TFT-LCD)与主动矩阵有机发光二极管(AMOLED)显示器中。COG电路采用玻璃板作为基板，然后在其上建构电路。现有的COG电路具有以下优点：卓越而简洁的设计可形成极高密度组件电路；无焊点因此具有更高的可靠性；玻璃基板及其电路具有良好的散热性能；可发展不同高度的精细图案，在制作处理高速和高频信号的电路时比现有的多层印刷电路板，例如HDI(high density interconnections)载板及BT(Bismaleimide Triazine)板，更简单、更便宜，因为多层印刷电路板需要昂贵的金属叠层。上述优点使COG电路技术非常适合制造涉及微型互连、精细导线图案、薄型化设计及低成本的电路板。通常，在市场上可获得的COG电路板，其玻璃板表面上形成的电路结构通常包括透明导电层，例如氧化铟锡(ITO)以及形成在ITO上的金属层。由于并非所有金属都适合形成在ITO上，因此，传统上，在ITO上形成的金属层可以选择性地由钼(Mo)、铝(Al)或铝钕(AlNd)形成。然而，上述金属所形成的金属层具有以下缺点：在回流焊制作工艺或共晶接合制中，难以将LED芯片牢固地接合在其上，因为包含钼或铝的金属层和LED芯片的电极材料很难形成共晶化合物。因此，为了克服上述缺点并增加LED芯片与前述COG电路板上电路结构的金属层之间的结合强度，上述电路结构40可采用结合增强电路层，结合增强电路层进一步形成在前述COG电路板上传统金属层之上作为界面层，与钼(Mo)、铝(Al)或铝钕(AlNd)形成的金属层和LED芯片的电极之间均具有较佳的结合强度，以增进LED芯片与前述COG电路结构的金属层之间的结合强度。在以下实施例中，更详细地描述了具有结合增强电路层的电路结构40。
图8显示图1中的目标基板10上电路结构40的一实施例，电路结构40包括玻璃板41、透明导电层42、金属层43、结合层44和共金层45。在本实施例中，现有的部分包括玻璃板41、透明导电层42和金属层43，结合增强电路层包括结合层44和共金层45。透明导电层42形成在玻璃板41上，并且由铟锡氧化物(ITO)、铟锌氧化物(IZO)或铟镓锌氧化物(IGZO)形成。金属层43由钼(Mo)、铝(Al)或铝钕(AlNd)形成，并形成在透明导电层42上。金属层43由钼、铝或铝钕(AlNd)形成，并形成在透明导电层42上。接合层44由钛、氮化钛、氮化钛和钛的叠层，或者依次堆叠的氮化钛、钛和氮化钛的叠层所形成。共金层45包含铜或金，并且形成在结合层44上。为了加强金属层43和设置在其上的半导体元件20(例如LED)的电极对之间的结合强度，包含结合层44和共金层45的结合增强电路层位于金属层43和半导体元件20的电极对21之间，作为金属层43和半导体元件20的电极对21之间的键合界面以达到预期的键合强度。基本上，结合层44作为金属层43与共金层45之间的结合界面，让金属层43与共金层45之间达到预期的结合强度。同样地，为了促进半导体元件20(例如LED)的电极对21产生共晶混合物，共金层45作为结合层44与半导体元件20的电极对21之间的结合界面，并让结合层44和半导体层20的电极对21之间达到预期的结合强度。
参考图9，图9所示的图1中的目标基板10上电路结构40的另一实施例与前述图8所示的实施例不同之处在于，还多了辅助结合层46和湿润层47。在本实施例中，除了图8所示实施例的部分外，结合增强电路层还包括辅助结合层46和湿润层47。辅助结合层46形成在共金层45上，包括钛、氮化钛、彼此堆叠的氮化钛和钛叠层，或者依次相继堆叠的氮化钛、钛和氮化钛叠层。湿润层47形成在辅助接合层46上并且由金或银形成。在本实施例中提供的辅助接合层46和湿润层47，使得电路结构40和半导体元件20的电极对21之间的接合强度高于前述图8所示实施例中的接合强度。本实施例的另一个优点是，在湿润层47中使用的金属例如金或银具有比铜更低的共晶温度，以缩短的固晶制造方法的时间并确保高的固晶结构强度。然而，不管前述图8的实施例和本实施例的结构有何差异，前述图8实施例的电路结构40的共金层45以及本实施例中的共金层45和湿润层47都需具备一定的厚度。如果图8实施例的结构要拥有与本实施例的湿润层47和半导体元件20的电极对21之间相似的结合强度，则共金层45可以选择使用贵金属(例如金)，但贵金属所需的厚度较厚将造成此实施例的成本效益较低。可替代地，本实施例提供了湿润层47在最佳厚度的范围中选择使用贵金属种类的弹性，同时在共晶层45中使用诸如铜等较便宜的材料，将电路结构40的厚度保持在所需的厚度范围内。就成本效益和固晶强度两者权衡而言，本实施例在不减低固晶强度的情况下满足了成本效益。
参考图10，图10显示图1中的目标基板10上电路结构40的另一实施例，本实施例与前述图8所示的实施例不同之处在于，共金层46被第一复合层48代替，第一复合层48形成在结合层44上以充当共金层和金属阻挡层，并且由钛/铝/钛/铝/镍/铂/金等金属层依次堆叠而成。在本实施例中，除了结合增强电路层包括结合层44和第一复合层48以外，其他部分与前述图8所示的实施例的结构相同。第一复合层48作为电路结构40的一部分，多个电触点40a形成在第一复合层48上。
参考图11，图11显示图1中的目标基板10的电路结构40的另一实施例，本实施例的电路结构40包括玻璃板41、透明导电层42和第二复合层49。在本实施例中，电路结构40包括玻璃板41和透明导电层42，并且结合增强电路层包括第二复合层49。透明导电层42形成在玻璃板41上。第二复合层49形成在透明导电层42上，并且由铬/铝/钛/铝/镍/铂/金等金属层依次堆叠而成。第二复合层49作为电路结构40的一部分，多个电触点40a形成在第二复合层49上。
参考图12，图12显示图1中的目标基板10的电路结构40的另一实施例，本实施例的电路结构40包括玻璃板41、透明导电层42、第一增强电路层43'、绝缘层44'以及第二增强电路层45'。透明导电层42形成在玻璃板41上，并用作玻璃板41和第一增强电路层43'之间的粘合层。第一增强电路层43'形成在透明导电层42上。绝缘层44'形成在第一增强电路层43'上，并且包含穿过绝缘层44'的多个通孔441。在绝缘层44'上形成第二增强电路层45'。第二增强电路层45'通过绝缘层44'的多个通孔441电连接到第一增强电路层43'。本实施例中，目标基板10具有两个增强电路层堆叠的电路结构与市场上多层印刷电路板类似，具有相同功能。
参考图13，图13显示图1中的目标基板10的电路结构40的另一实施例，本实施例是前述图12显示的实施例的变型，差异在于本实施例的结构不具有透明导电层42。透明导电层42是非必要的部分，因为透明导电层42的目的仅用于当作粘合层，用以粘合玻璃板和与其相邻的金属层。其他具有类似功能的黏合材料，皆可以被用作替代透明导电层42的替代物。
图12和图13中的第一增强电路层43'和第二增强电路层45'的结构可以包括图8中去除金属层43的结构中的结合层44和共金层45；可以包括图9中去除金属层43的结构中的结合层44、共金层45、辅助接合层46以及湿润层47；在图10中去除金属层43的结构中的结合层44和第一复合层48；以及在图11结构中的第二复合层49。此外，当将上述具有玻璃板41的电路结构40应用于背光源时，由于考虑到背光源的发光效率，需要将一反射层结合到目标基板10中用以反射由多个半导体元件，例如LEDs，产生的光。参照图14，图14显示图1中的目标基板10的电路结构40的另一实施例，与前述相关实施方式的不同之处在于，目标基板10还具有一背面反射器60位于在支撑基座30与电路结构40之间。假设支撑基座30包括玻璃板，则背面反射器60不需要在其中具有一玻璃板。
与背面反射器60有关的一实施例中，参考图15，背面反射器60包括反射层62和绝缘介电层64。形成反射层62的方式包含在支撑基座30上沉积铝，反射层62仅用于反射照射到其上的光而不具导电的功能。通过在反射层62上沉积二氧化硅，在反射层62上形成绝缘介电层64。电路结构40形成在绝缘介电层64上。应当理解，绝缘介电层64位于反射层62和目标基板10的电路结构40之间，将反射层62与目标基板10的电路结构40电绝缘隔离。
参照图16，在与背面反射器60有关的另一实施例中，本实施例与前述图15显示的实施例不同在附加一保护膜63。当绝缘介电层64直接形成在反射层62上时，绝缘介电层64可能会包含多个孔洞。由于绝缘介电层64具有多孔性，电路结构40可能会通过绝缘介电层64的孔洞和反射层62电连接而发生短路的问题。为了解决短路问题，使用保护膜63当作绝缘层以使反射层62与电路结构40互连隔离，并避免电路结构40与反射层62之间互连电连接而发生短路。其中，使用炉管对反射层62的顶部进行氧化制作工艺或氮化制作工艺来形成保护膜63，因此保护膜63的材料为金属氧化物或金属氮化物以防止短路的发生。然后，通过在保护膜63上沉积二氧化硅形成绝缘介电层64。接着，在绝缘介电层64上形成电路结构40。
为了解决一般回流焊制作工艺中出现的电路板翘曲问题，上述的固晶结构实施例中，让半导体元件20的电极对21与目标基板10上的电路结构40的电触点40a之间对准后，利用能量束产生器50产生至少一个能量束51，用以加热和电连接半导体元件20的电极对21和目标基板10的电接触点40a。在多个半导体元件20的电极对21与目标基板10上各个电接触点40a对准好之后，因为目标基板10上的被能量束51照射而粘合的电接触点40a是目标基板10的一小部分，所以本发明中的能量束51的加热图案仅包括一小部分分散的加热点，不像在一般回流焊制作工艺中那样，将整个目标基板10放置在烤箱中整体一起加热。与一般回流焊制作工艺相比，本发明中的目标基板10由于这种点分散加热点模式而吸收较少的热能，这有效地避免了在某些区域上的过度集中的热应力，从而引起翘曲的问题。此外，关于接合材料的类型和玻璃上TFT-LCD/AMOLED电路结构的选择，两者的目标均在半导体元件20与目标基板10之间提供更高的接合强度。
参照图17，本发明的固晶方法包括以下步骤。
步骤S101：提供一目标基板10具有一电路结构40形成在上面，以及多个半导体元件20，其中，电路结构40具有多个电触点40a形成在其上，每个半导体元件20包括一电极对21。每一个半导体元件20可以包括但不限于一对电极和多个发光层的发光二极管(LED)彼此堆叠。目标基板10可以包括但不限于印刷电路板(PCB)、柔性印刷电路板、玻璃电路板和具有薄膜晶体体(TFT)电路或脉冲宽度调制(PWM)驱动电路底板中。
步骤S102：将多个半导体元件20布置在目标基板10上，每个半导体元件20的电极对21与目标基板10的两个对应的电触点40a对准。
步骤S103：施加由能量束产生器50产生的能量束51，以将多个半导体元件20中的电极对21和与其对准的对应电触点40a接合并电连接。在加热循环中，通过能量束51所携带的热能进行加热，直到所有半导体元件20的电极对21和与的对准的目标基板10相对应的电接触点40a被加热并电连接。
说到由能量束产生器50产生能量束51的数量，可包括如图1所示的一个能量束51，在一加热循环中，其被施加用以加热并电连接一个半导体元件20的电极对21与目标基板10的两个相对应的电接触点40a；或如图3所示，在一加热周期中，一个能量束51被施加用以加热并电连接多个半导体元件20的电极对21和目标基板10上对应的电接触点40a。替代地，如图4所示，至少两个能量束51在一加热周期中，被分别施加以加热和电连接至少两个半导体元件20的电极对21和相应目标基板10上的电接触点40a。上述加热周期均在0.01秒至1秒的范围内。
关于至能量束51的类型，能量束51可以是紫外(UV)光，可见光和红外(IR)光其中之一的激光光束。当至能量束51是IR激光光束时，IR激光光束的波长在1,000nm至2,000nm的范围内。
此外，根据能量束产生器50的放置位置，在步骤S103中，如图1所示，当能量束产生器50紧邻多个半导体元件20放置时，一个能量束51在加热循环中携带热能通过至少一个半导体元件20传递到一电极对21以及与其对准的相应电接触点40a；如图2所示，当将能量束产生器50放置在目标基板10旁边时，由一个能量束51在加热循环中，穿过目标基板10将热能传递到每至少一个半导体元件20的电极对21和相应的电接触点40a。如前所述，将能量束产生器50放置在与目标基板10相同侧的好处，包括由于加热周期较短，因此制造效率更高，及对半导体元件20的影响较小。
参照图1、图18A和图18B，步骤S101还包括以下步骤，确定固晶类型并执行前述固晶材料的布置及相对应的动作，以增强粘着强度，在步骤102中在半导体元件20和目标基板10的电触点40a之间对准之前，将一开始装载在胶带90上的多个半导体元件20移到载体板70上做准备。接下来，首先确定固晶类型以及固晶制造方法以将固晶材料预先准备并施加在预定的位置上。当为第一固晶类型时，表示固晶材料只有一种，并且固晶材料在目标基板10的制造过程中预先形成在目标基板10上电路结构40的电接触点40a上；当为第二固晶类型时，表示固晶材料只有一种，并且在半导体元件20的制造过程中，固晶材料预先形成在半导体元件20的电极对21上；当为第三固晶类型时，表示固晶材料只有一种，并将固晶材料施加至目标基板10上电路结构40的电接触点40a；当为第四固晶类型时，具有两种固晶材料，其中一种固晶材料预先形成在半导体元件20的电极对21上，另一种固晶材料在电极对21与相应的电接触点40a对准之前，施加在目标基板10上电路结构40的电触点40a。在步骤S101中，将从步骤S1010，S1011以及S10111至S10113开始准备目标基板10和多个半导体元件40，以将相关的接合材料预形成在目标基板10和多个半导体元件40的对应位置上。在步骤S101中，将从步骤S1010、S1011以及S10111至S10113开始，准备目标基板10和多个半导体元件20，以将相关的固晶材料预形成在目标基板10及多个半导体元件20的对应位置上。
步骤S1010：确定固晶类型是为第三类。如果结果为肯定，则执行步骤S1012。否则，执行步骤S1011。
步骤S1011：确定固晶类型的编号。当固晶类型为第一、第二和第四类时，分别执行步骤S10111，S10112和S10113。
步骤S10111：在目标基板10上每个电接触点40a上预形成固晶材料。固晶材料可以是如图5和图5A所示的焊料80A。
步骤S10112：在每个半导体元件20的电极对21上预先形成固晶材料。固晶材料可以是如图5和图5A所示的焊料80A。
步骤S10113：在每个半导体元件20的电极对21上预先形成第一固晶材料。第一固晶材料可以是锡或锡银的金属层80E，其涂覆在每一个半导体元件20的电极对21上，如如图7和图7A所示。
步骤S1012：将一部分的半导体元件20固定到胶带90上。胶带90可以是蓝膜，但不限于此。
步骤S1013：暂时地将这部分的半导体元件20以一间距放置在承载板70上，以使多个半导体元件20的电极对21相对应于目标基板10的电接触点40a。承载板70可以是紫外线(UV)胶带、热解离胶带和蓝膜中的一种，但不限于此，并且在其一侧上粘附此部分多个半导体元件20。这一侧表面的粘性会因紫外线照射或加热而降低。
步骤S1014：使部分的半导体元件20和承载板70整体上下颠倒，使这部分的半导体元件20的电极对面对目标基板10的各个电触点40a。
为了进一步提高多个半导体元件20与目标基板10之间的接合强度，步骤S101还包括以下步骤，用于根据固晶类型将对应的固晶材料施加到多个半导体元件20与目标基板10上。
步骤S1015：确定固晶的类型。当固晶类型为第三或第四时，请执行步骤S10151或S10152。
步骤S10151：将固晶材料施加到目标基板10的每个电接触点40a。固晶材料可以是助焊剂，含粘合剂的助焊剂或粘合剂80C，如图6和图6A所示。
步骤S10152：将第二固晶材料施加到目标基板10的每个电接触点40a上。第二固晶材料可以是包括锡、钛、铟和银的金属中选出的金属颗粒(未示出)的助熔剂80F的粘合剂，或不包含金属颗粒的粘合剂80F(未示出)，如第7和7A图所示。
步骤S102：将多个半导体元件20布置在目标基板10上。
假设多个半导体元件20是发光元件，例如LED，为确保由LED提供的均匀照明，则LED的发光表面，即LED的顶表面，需要彼此齐平。
此外，在将红色，绿色和蓝色LED粘着时，由于结构不同，当红色LED被能量束51加热时，当红色、绿色和蓝色LED同时受到相同的加热条件下，红色LED比绿色和蓝色LED更容易烧毁。由于红色，绿色和蓝色为三种原色，因此红色，绿色和蓝色LED都是用于产生彩色光的照明设备所必需的发光元件。因此，提供以下实施例以解决在固晶制造方法的过程中同时加热红色，绿色和蓝色LED期间红色LED的烧坏问题。
在一实施例中，在将红色，绿色和蓝色LED粘着时，可以在第一加热周期中，将具有第一能量水平的能量束传递到红色LED，在第二加热周期中，将具有第二能量水平的能量束传递到绿色跟蓝色LED。就能量束提供热能力的程度而言，第一能量水平低于第二能量水平。同时，第一加热周期长于第二加热周期。因此，施加到绿色和蓝色LED的能量束的能量水平较高，意味着绿色和蓝色LED的耐热性比红色LED高，对于红色LED较长的第一加热周期是为了补偿由于能量束的第一能量水平较低而单位时间内提供的热能不足。作为本实施例的非限制性示例，照射红色LED的能量束51的能量水平可以为1，照射绿色和蓝色LED的能量束51的能量水平可以为5。水平5高于水平1，绿色和蓝色LED具有更高的耐热性。照射红色LED的第一加热周期可以是8毫秒，照射绿色和蓝色LED的第二加热周期可以是2毫秒。因为这种方法涉及由一个能量束51提供两种不同的能量水平，所以对于绿色和蓝色LED以及对于红色LED的固晶加热过程中，在同一个能量束51的照射且在不同能量水平下的固晶加热过程，需要分为两个不同的加热过程，意思是加热多组红色、绿色跟蓝色LED时，先以两个加热过程之一加热其中一组里的红色LED以及以另一个加热过程加热绿色和蓝色LED之后，再换到另一组以两个加热过程进行加热固晶制造方法。
在另一实施例中，对于固晶粘合红色、绿色和蓝色LED时，施加同一个能量束51的同一个能级到红色、绿色和蓝色LED，且加热红色、绿色和蓝色LED的是同一个加热周期。由于红色LED的耐热性较低，比较容易被能量束51烧毁，能量束51施加在红色、绿色和蓝色LED上的能量水平以红色LED可以承受的程度所决定。因此，为避免红色LED被烧毁的状况，选择了较低能量水平的能量束51。但为了以较低能量水平的能量束51加热，需要更长的加热周期，以在固晶过程中允许足够的热能传递到所有LED，特别是绿色和蓝色LED。举例来说，用于红色，绿色和蓝色LED的能量束51，其能量水平可以是等级1，这是由红色LED决定的相对较低的能量水平，然后红色、绿色和蓝色LED的加热周期可以为8毫秒，目的在于延长加热周期，以便在固晶过程中将足够的热能传递给所有LED，尤其是绿色和蓝色LED。尽管加热周期更长，但是本实施例不需要如前一实施例中那样具有两个不同的加热过程，因此简化了固晶制造方法。与前一实施例相反，所有红色LED以及所有绿色LED和蓝色LED可以在整个固晶制造方法中，通过单个加热制作工艺以单一个能量水平同时施加。
为了达到上述目的，在完成步骤S102之后，参考图19，在步骤S103中，将多个半导体元件20布置在目标基板10上，并执行如下所示的子步骤S1031和S1032。
步骤S1031：施加压力以作用在多个半导体元件20和与其对准的相应电接触点40a上；或者同时均匀地在承载板70上施加压力以分别作用于每个半导体元件20上；或者在加热周期中，同时施以压力作用于多个半导体元件20和与其对准的相应电接触点40a上。
步骤S1032：当半导体元件40为红色、绿色和蓝色LED时，在第一加热周期中将具有第一能量水平的能量束51施加到红色LED，在第二加热周期中将具有相对于第一能量水平的第二能量水平的能量束51施加到绿色和蓝色LED，其中第一能量水平低于第二能量水平且在第一加热周期中不会烧坏红色LED，此外第一加热周期长于第二加热周期；或者将同一能量水平以及同一加热周期的能量束51施加到所有红色、绿色和蓝色LED，其中能量水平和加热周期设定为避免烧毁红色LED。通过改进红色、绿色和蓝色LED的设计并调整能量束的焦距，可以实现所有红色、绿色和蓝色LED接受相同能量水平的能量束。
图20A～图20E显示根据本发明一实施例将初始装载在胶带90上的多个半导体元件20转移到载体板70的步骤。如图20A所示，在多个半导体元件20的正上方配置有压模11和粘着胶层13。压模11具有多个突出部12，突出部12位于粘着胶层13的下方/后方，分布的位置与多个被选的半导体元件20的位置以及占据区域相对应。换句话说，多个突出部12和多个被选的半导体元件20位于粘着胶层13的相对侧，并且彼此面对。粘着胶层13包括多个接触部131和多个未接触部132。粘着胶层13的多个接触部131是在转移多个被选的半导体元件20的特定步骤中，与多个突出部12直接连接的区域。粘着胶层13的多个未接触部132是在转移多个被选的半导体元件20的特定步骤中，从未与多个突出部12连接的区域。详细来说，相邻的两个接触部131被未接触部132间隔开。在将多个被选的半导体元件20与胶带90分离之前，多个接触部131和多个未接触部132基本上位于相同的高度/平面上。粘着胶层13优选是可挠的和可延展的。粘着胶层13可以选自紫外线(UV)胶带，热解离胶带和蓝膜，但不限于此。
如图20B所示，压模11朝着多个半导体元件20移动。粘着胶层13的接触部131被突出部12推出，使得接触部131变形并接触多个被选的半导体元件20。未接触部132未被突出部12推出，且未、或是少部分接触半导体元件20。换句话说，当压模11朝着多个半导体元件20移动时，粘着胶层13会产生形变。因此，多个接触部131和多个未接触部132不在同一平面/高度上。然后，从胶带90的底侧向多个被选的半导体元件20和胶带90的界面施加至少一个能量束51，例如激光。胶带90与多个被选的半导体元件20之间的粘性因为能量束的施加而减小。至少一个能量束51可以由能量束产生器(未示出)提供。在一个实施例中，多个被选的半导体元件20被单个能量束照射，或是被多个能量束在相同的或几乎相同的时间点照射。在另一实施例中，多个被选的半导体元件20依序被至少一个能量束51施加。
如图20C所示，将带有粘着胶层13和多个被选半导体元件20的压模11从胶带90移开。粘附于粘着胶层13的多个被选半导体元件20与胶带90分离。非被选的多个半导体元件20留在胶带90上。初始装载在胶带90上的多个半导体元件20以第一阵列的形式排列。由压模11拾取的多个被选半导体元件20以第二阵列的形式排列。第二阵列上相邻半导体元件20之间的距离大于第一阵列上相邻半导体元件20之间的距离。
如图20D所示，压模11连同粘着胶层13和多个被选的半导体元件20一起向载体板70移动，将多个被选的半导体元件20放置在载体板70上。至少一个能量束51施加到多个被选的半导体元件20和粘着胶层13之间的界面，用以降低粘着胶层13的黏性。至少一个能量束51'施加到多个被选的半导体元件20和载体板70之间的界面上，用以增加载体板70的黏性。如图20E所示，然后将压模11从载体板70移开，多个被选的半导体元件20留置在载体板70上。在另一个实施例中，载体板70可以是目标基板。
至少一个能量束51或51'可以由能量束产生器(未示出)提供。在一个实施例中，多个被选的半导体元件20被单个能量束照射，或是被多个能量束在相同的或几乎相同的时间点照射。在另一实施例中，多个被选的半导体元件20依序被至少一个能量束51或51'施加。
图21A～图21E显示根据本发明另一实施例将初始装载在胶带90上的多个半导体元件20转移到载体板70的步骤。如图21A所示，在多个半导体元件20的正上方配置有压模11和粘着胶层13，用以剥离多个被选的半导体元件20。图21A和图20A之间的区别在于，图21A中的压模11不具有多个突出部。图21A中的压模11可以转移一半导体元件20的阵列。粘着胶层13和压模11的接触部131在底视图或上视图中几乎彼此重叠。
如图21B所示，压模11朝着多个半导体元件20移动。粘着胶层13的接触部131被压模11推出，粘着胶层13因而变形，使得接触部131接触多个被选的半导体元件20。多个被选的半导体元件20以阵列的形式排列在胶带90上。随后，一能量束51施加到多个被选的半导体元件20和胶带90的界面。胶带90与多个被选的半导体元件20之间的粘性因为能量束的施加而减小。
如图21C所示，将压模11从胶带90移开，多个被选半导体元件20因而与胶带90分离。非被选的多个半导体元件20留在胶带90上。具体来说，所有设置在压模11突出部上的半导体元件20与载体90分离。初始装载在胶带90上的多个半导体元件20以第一阵列的形式排列。由压模11拾取的多个被选半导体元件20以第二阵列的形式排列。第二阵列上相邻半导体元件20之间的距离大致与第一阵列上相邻半导体元件20之间的距离相同。
如图21D所示，压模11向载体板70移动，将多个被选的半导体元件20放置在载体板70上。一能量束51施加到多个被选的半导体元件20和粘着胶层13之间的界面，用以降低粘着胶层13的黏性。一能量束51'施加到多个被选的半导体元件20和载体板70之间的界面上，用以增加载体板70与多个半导体元件20之间的粘性。如图21E所示，将压模11从载体板70移开，多个被选的半导体元件20留置在载体板70上。在另一个实施例中，载体板70可以是目标基板。
以上所述的实施例仅是为说明本发明的技术思想及特点，其目的在使熟悉此项技术的人士能够了解本发明的内容并据以实施，当不能以的限定本发明的专利范围，即大凡依本发明所揭示的精神所作的均等变化或修饰，仍应涵盖在本发明的专利范围内。

Claims (10)

1.一种固晶制造方法，其特征在于，包含：
提供目标基板，包含：
支撑基板；以及
电路结构，形成在该支撑基板的一侧以及包含：
玻璃板，形成在该支撑基板上；
透明导电层，形成在该玻璃板上；
金属层，形成在该透明导电层上；
粘合增强电路层，形成在该金属层上；以及
多个电接触点，形成在该粘合增强电路层上；
提供多个半导体元件粘附到承载板上并且彼此间具有间隙隔开，每个半导体元件具有电极对与该目标基板上该电路结构的两对应的该电接触点对准；以及
提供能量束产生器产生能量束，用于在加热循环中通过由该能量束携带的热量热能，来接合和电连接其中一个该多个半导体元件的该电极对以及与其对准的该电接触点。
2.如权利要求1所述的固晶制造方法，其中，该多个半导体元件包含发光二极管(LED)，该发光二极管包含该电极对以及发光叠层。
3.如权利要求1所述的固晶制造方法，其中该目标基板包括印刷电路板(PCB)、柔性电路板、玻璃电路板或带有薄膜晶体管(TFT)电路或脉冲频宽调制(PWM)驱动电路的背板。
4.如权利要求1所述的固晶制造方法，其中该目标基板的该电路结构包含液晶显示电路。
5.如权利要求1所述的固晶制造方法，其中形成该增强电路层的方法包括：
提供结合层，形成在该金属层上；和
提供共金层，形成在该结合层上并在其上形成该多个电接触点。
6.如权利要求1所述的固晶制造方法，还包括形成一背面反射器形成在该支撑基板和该目标基板的该电路结构之间。
7.如权利要求6所述的固晶制造方法，其中，形成该背面反射器的方法包括：
形成反射层在该目标基板的该支撑基板上；以及
形成绝缘介电层形成在该反射层上，其中该目标基板的该电路结构形成在该绝缘介电层上。
8.如权利要求1所述的固晶制造方法，其中，该加热循环的周期在0.01秒至1秒的范围内。
9.如权利要求1所述的固晶制造方法，其中，该能量束包含紫外激光光束、可见光激光光束或红外激光光束。
10.如权利要求9所述的固晶制造方法，其中，该红外激光光束具有波长介于1,000纳米(nm)至2,000纳米(nm)的范围内。
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