CN111472043A - Heating device for preparing tubular crystal material - Google Patents
Heating device for preparing tubular crystal material Download PDFInfo
- Publication number
- CN111472043A CN111472043A CN202010358724.9A CN202010358724A CN111472043A CN 111472043 A CN111472043 A CN 111472043A CN 202010358724 A CN202010358724 A CN 202010358724A CN 111472043 A CN111472043 A CN 111472043A
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- Prior art keywords
- crucible
- tubular
- heater
- sleeve
- heat
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 title claims abstract description 49
- 238000010438 heat treatment Methods 0.000 title claims abstract description 35
- 239000013078 crystal Substances 0.000 title claims abstract description 29
- 230000007704 transition Effects 0.000 claims description 25
- 239000002178 crystalline material Substances 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 3
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009434 installation Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 239000002210 silicon-based material Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000004321 preservation Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000008710 crystal-8 Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A heating device for preparing tubular crystal materials relates to the technical field of new materials, and the heating device directly or indirectly applies work to a crucible through a heater (3), reduces a heat conduction path, further can realize low energy consumption, flexible layout, convenient installation and adjustment, and simultaneously can realize rapid temperature rise and fall, improves production efficiency and the like.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of new materials, in particular to a heating device for preparing a tubular crystal material.
[ background of the invention ]
The new material industry has the characteristics of high technology density, high research and development investment, high added value of products, strong international property of production and market, wide application range, good development prospect and the like, the research and development level and the industrialization scale of the new material industry become important marks for measuring national economy, social development, scientific and technological progress and national defense strength, and all countries in the world, particularly developed countries, pay attention to the development of the new material industry. Taking a target as an example, a sputtering coating process based on the physical vapor deposition principle is widely applied to the technical fields of liquid crystal display equipment, solar cells, solar vacuum tubes, semiconductor chips and the like; the rotary target is a commonly used coating consumable material in a sputtering coating process, generally consists of a tubular metal base material and a coating material layer, and is prepared by the normal method that the coating material layer is directly sprayed after surface cleaning or sand blowing is carried out on the outer surface of the tubular metal base material; meanwhile, due to the specific requirements of the spraying process, the purity of the used silicon powder is not enough, so that the overall purity of the target material is low, and the coating quality is affected.
The other process is to draw a hollow tube material on a complete ingot or bar-shaped material by a material drawing device, and bind the tube material on a tubular metal substrate after grinding and polishing. At present, the solid bar is drawn in the crystal drawing process in a common form, but the heating device and the thermal field form used for drawing the hollow tubular crystal also become a necessary way to solve the problem. Therefore, how to provide a heating device for preparing tubular crystalline materials has become a long-standing technical appeal for those skilled in the art.
[ summary of the invention ]
In view of the defects in the background art, the invention discloses a heating device for preparing tubular crystal materials, which directly applies work to a crucible through a heater, reduces a heat conduction path, further realizes low energy consumption, realizes flexible layout, is convenient to install and adjust, and can realize quick temperature rise and fall, improve the production efficiency and the like.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
a heating device for preparing tubular crystal materials comprises a furnace chamber, a heater, a crucible and tubular seed crystals, wherein the crucible is arranged in the furnace chamber, the heater is arranged at the periphery of the crucible at intervals, and the tubular seed crystals are arranged below the crucible to form the heating device for preparing the tubular crystal materials.
The heating device for preparing the tubular crystal material is characterized in that the crucible comprises a crucible outer sleeve and a crucible inner sleeve, the crucible inner sleeve is arranged at the lower end of the crucible outer sleeve, and a material flowing groove is formed between the inner edge surface of the crucible outer sleeve and the outer edge surface of the crucible inner sleeve.
The heating device for preparing the tubular crystal material is characterized in that the width of the material flowing groove is 0.01-10 mm.
The heating device for preparing the tubular crystal material is characterized in that a transition sleeve is arranged between the crucible and the heater.
The heating device for preparing the tubular crystal material is characterized in that a heat-insulating outer sleeve is arranged between the transition sleeve and the heater.
The heating device for preparing the tubular crystal material is characterized in that the upper ends of the transition sleeve and the heat-insulating outer sleeve are provided with upper covers, and the lower ends of the transition sleeve and the heat-insulating outer sleeve are provided with bottom plates.
The heating device for preparing the tubular crystal material is characterized in that a heat-insulating layer is arranged between the transition sleeve and the heat-insulating outer sleeve.
The heating device for preparing the tubular crystal material is characterized in that a heat-insulating jacket is arranged outside the heater.
The heating device for preparing the tubular crystal material is characterized in that the heater is an induction heating coil or a resistance heater.
The heating device for preparing the tubular crystal material is characterized in that a material guide pipe is arranged at the upper end of the crucible.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
the crucible heater directly or indirectly applies work to the crucible, reduces a heat conduction path, further can realize low energy consumption, can realize flexible layout, is convenient to install and adjust, can realize quick temperature rise and fall, improves the production efficiency and the like.
[ description of the drawings ]
FIG. 1 is a schematic view of a first configuration of the present invention;
FIG. 2 is a second schematic structural view of the present invention;
FIG. 3 is a schematic view of a third construction of the present invention;
FIG. 4 is a fourth schematic construction of the present invention;
in the figure: 1. a furnace chamber; 2. a material guide pipe; 3. a heater; 4. the crucible is sleeved; 5. a polycrystalline silicon material; 6. sleeving a crucible; 7. a chute; 8. tubular seed crystals; 9. a transition sleeve; 10. an upper cover; 11. a heat preservation outer sleeve; 12. a base plate.
[ detailed description ] embodiments
The present invention can be explained in more detail with reference to the following examples; however, the present invention is not limited to these examples.
It should be noted that the directions or positional relationships indicated by "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc., used in describing the structure of the present invention are based on the directions or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the present invention.
The heating device for preparing the tubular crystal material, which is described with reference to fig. 1 to 4, comprises a furnace chamber 1, a heater 3, a crucible and a tubular seed crystal 8, as shown in fig. 1, the crucible is arranged in the furnace chamber 1, the crucible comprises a crucible outer sleeve 4 and a crucible inner sleeve 6, the crucible inner sleeve 6 is arranged at the lower end of the crucible outer sleeve 4, a material flowing groove 7 is arranged between the inner edge surface of the crucible outer sleeve 4 and the outer edge surface of the crucible inner sleeve 6, the width of the material flowing groove 7 is 0.01mm to 10mm, in the specific implementation, the material flowing groove 7 has a replacement structure that a plurality of material flowing holes are arranged at the bottom of the crucible inner sleeve 6 or the bottom of the inner edge surface of the crucible outer sleeve 4, and the diameter of the material flowing holes is 0.01mm to 10 mm; further, the crucible outer sleeve 4 and the crucible inner sleeve 6 can be arranged into an integral barrel-shaped structure, then an annular groove which is concave upwards is arranged below the barrel bottom of the barrel-shaped structure, a plurality of holes which penetrate through the barrel bottom of the barrel-shaped structure are arranged at the bottom of the annular groove, a fluid trough 7 is formed by the holes and the annular groove, or the crucible outer sleeve 4 and the crucible inner sleeve 6 are arranged into a split structure, and a plurality of connecting blocks are arranged between the inner edge surface of the crucible outer sleeve 4 and the outer edge surface of the crucible inner sleeve 6 at intervals to connect the crucible outer sleeve 4 and the crucible inner sleeve 6 into a whole; heaters 3 are arranged at intervals on the periphery of the crucible, the heaters 3 are induction heating coils or resistance heaters, tubular seed crystals 8 are arranged below the crucible, and a material guide pipe 2 is arranged at the upper end of the crucible to form the heating device for preparing tubular crystal materials.
In the specific implementation of the invention, as shown in fig. 2, a transition sleeve 9 is arranged between the crucible and the heater 3, the heater 3 directly heats the transition sleeve 9, then the crucible and the polycrystalline silicon material 5 in the crucible are heated through heat radiation, and the polycrystalline silicon material 5 is melted to form a melt.
Further, as shown in fig. 3, a heat insulation outer sleeve 11 is arranged between the transition sleeve 9 and the heater 3, an upper cover 10 is arranged at the upper end of the transition sleeve 9 and the heat insulation outer sleeve 11, and a bottom plate 12 is arranged at the lower end of the transition sleeve 9 and the heat insulation outer sleeve 11. And a heat-insulating layer is arranged between the transition sleeve 9 and the heat-insulating outer sleeve 11, and the heat-insulating layer is made of heat-insulating materials such as zircon sand, alumina balls and alumina hollow balls. The heater 3 directly heats the transition sleeve 9, then heats the crucible and the polycrystalline silicon material 5 in the crucible through heat radiation, and the polycrystalline silicon material 5 is melted to form a melt. The transition sleeve 9 can also be made of a non-magnetic heat-insulating material, so that the heater 3 can directly heat the crucible outer sleeve 4 and the polycrystalline silicon material 5 in the crucible. Through setting up the heat preservation through above-mentioned scheme, can realize the heat preservation effect in thermal field, and then realize the effect that reduces the energy consumption.
Further, as shown in fig. 4, a transition sleeve 9 is arranged between the crucible and the heater 3, a heat-insulating outer sleeve 11 is arranged outside the heater 3, an upper cover 10 is arranged at the upper end of the transition sleeve 9 and the heat-insulating outer sleeve 11, and a bottom plate 12 is arranged at the lower end of the transition sleeve 9 and the heat-insulating outer sleeve 11. And a heat-insulating layer is arranged between the transition sleeve 9 and the heat-insulating outer sleeve 11, and the heat-insulating layer is made of heat-insulating materials such as zircon sand, alumina balls and alumina hollow balls. The heater 3 directly heats the transition sleeve 9, then heats the crucible and the polycrystalline silicon material 5 in the crucible through heat radiation, and the polycrystalline silicon material 5 is melted to form a melt. The transition sleeve 9 can also be made of a non-magnetic heat-insulating material, so that the heater 3 can directly heat the crucible outer sleeve 4 and the polycrystalline silicon material 5 in the crucible. Above-mentioned scheme is through setting up the heat preservation, can realize the heat preservation effect in thermal field equally, and then realizes the effect that reduces the energy consumption.
Further, a heater 3 may be provided at an interval around the crucible, and a heat insulating jacket 11 may be provided outside the heater 3.
When the method is implemented specifically, firstly, polycrystalline silicon materials 5 in a feeding device outside a furnace chamber 1 enter a crucible through a material guide pipe 2, a heater 3 is started, the heater 3 directly or indirectly heats the crucible and the polycrystalline silicon materials 5 in the crucible, and after the polycrystalline silicon materials 5 are melted into molten liquid, the molten liquid flows to the upper end of a tubular seed crystal 8 through a material flow groove 7, so that the preparation of the tubular crystal is realized.
The present invention is not described in detail in the prior art.
The embodiments selected for the purpose of disclosing the invention, are presently considered to be suitable, it being understood, however, that the invention is intended to cover all variations and modifications of the embodiments which fall within the spirit and scope of the invention.
Claims (10)
1. A heating device for preparing tubular crystal material, comprising a furnace chamber (1), a heater (3), a crucible and a tubular seed crystal (8), characterized in that: a crucible is arranged in the furnace chamber (1), a heater (3) is arranged at the periphery of the crucible at intervals, and a tubular seed crystal (8) is arranged below the crucible to form the heating device for preparing the tubular crystal material.
2. The heating apparatus for producing a tubular crystalline material as set forth in claim 1, wherein: the crucible comprises a crucible outer sleeve (4) and a crucible inner sleeve (6), the crucible inner sleeve (6) is arranged at the lower end of the crucible outer sleeve (4), and a material flowing groove (7) is arranged between the inner edge surface of the crucible outer sleeve (4) and the outer edge surface of the crucible inner sleeve (6).
3. The heating apparatus for producing a tubular crystalline material as set forth in claim 2, wherein: the width of the material flowing groove (7) is 0.01 mm-10 mm.
4. The heating apparatus for producing a tubular crystalline material as set forth in claim 1, wherein: a transition sleeve (9) is arranged between the crucible and the heater (3).
5. The heating apparatus for producing a tubular crystalline material as set forth in claim 4, wherein: and a heat-insulating outer sleeve (11) is arranged between the transition sleeve (9) and the heater (3).
6. The heating apparatus for producing a tubular crystalline material as set forth in claim 4, wherein: the upper ends of the transition sleeve (9) and the heat-insulating jacket (11) are provided with an upper cover (10), and the lower ends of the transition sleeve (9) and the heat-insulating jacket (11) are provided with a bottom plate (12).
7. The heating apparatus for producing a tubular crystalline material as set forth in claim 4, wherein: and a heat-insulating layer is arranged between the transition sleeve (9) and the heat-insulating outer sleeve (11).
8. The heating apparatus for producing a tubular crystalline material as set forth in claim 1, wherein: and a heat-insulating jacket (11) is arranged outside the heater (3).
9. The heating apparatus for producing a tubular crystalline material as set forth in claim 1, wherein: the heater (3) is an induction heating coil or a resistance heater.
10. The heating apparatus for producing a tubular crystalline material as set forth in claim 1, wherein: the upper end of the crucible is provided with a material guide pipe (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010358724.9A CN111472043A (en) | 2020-04-30 | 2020-04-30 | Heating device for preparing tubular crystal material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010358724.9A CN111472043A (en) | 2020-04-30 | 2020-04-30 | Heating device for preparing tubular crystal material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111472043A true CN111472043A (en) | 2020-07-31 |
Family
ID=71763028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010358724.9A Pending CN111472043A (en) | 2020-04-30 | 2020-04-30 | Heating device for preparing tubular crystal material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111472043A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113279052A (en) * | 2021-04-25 | 2021-08-20 | 弘元新材料(包头)有限公司 | Large-size single crystal pre-temperature-adjusting system and device thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1272145A (en) * | 1998-05-29 | 2000-11-01 | 东洋通信机株式会社 | Apparatus and method for manufacturing monocrystals, and monocrystal |
| JP2010235367A (en) * | 2009-03-31 | 2010-10-21 | Tdk Corp | Method for pulling down single crystal, crucible used in the method, and device for pulling down |
| JP2011246306A (en) * | 2010-05-26 | 2011-12-08 | Tdk Corp | Method for producing single crystal and method for producing substrate using this method for producing single crystal, and pulling-down apparatus used for this method for producing single crystal |
| CN108418085A (en) * | 2017-10-27 | 2018-08-17 | 同济大学 | A kind of full crystal optical fibre and covering manufacture craft |
| CN212713842U (en) * | 2020-04-30 | 2021-03-16 | 刘建军 | Heating device for preparing tubular crystal material |
-
2020
- 2020-04-30 CN CN202010358724.9A patent/CN111472043A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1272145A (en) * | 1998-05-29 | 2000-11-01 | 东洋通信机株式会社 | Apparatus and method for manufacturing monocrystals, and monocrystal |
| JP2010235367A (en) * | 2009-03-31 | 2010-10-21 | Tdk Corp | Method for pulling down single crystal, crucible used in the method, and device for pulling down |
| JP2011246306A (en) * | 2010-05-26 | 2011-12-08 | Tdk Corp | Method for producing single crystal and method for producing substrate using this method for producing single crystal, and pulling-down apparatus used for this method for producing single crystal |
| CN108418085A (en) * | 2017-10-27 | 2018-08-17 | 同济大学 | A kind of full crystal optical fibre and covering manufacture craft |
| CN212713842U (en) * | 2020-04-30 | 2021-03-16 | 刘建军 | Heating device for preparing tubular crystal material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113279052A (en) * | 2021-04-25 | 2021-08-20 | 弘元新材料(包头)有限公司 | Large-size single crystal pre-temperature-adjusting system and device thereof |
| CN113279052B (en) * | 2021-04-25 | 2023-12-12 | 弘元新材料(包头)有限公司 | Large-size single crystal pre-temperature adjusting system and device thereof |
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