CN111463154A - High-temperature ozone oxidation annealing device - Google Patents
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- CN111463154A CN111463154A CN202010419231.1A CN202010419231A CN111463154A CN 111463154 A CN111463154 A CN 111463154A CN 202010419231 A CN202010419231 A CN 202010419231A CN 111463154 A CN111463154 A CN 111463154A
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
The invention discloses a high-temperature ozone oxidation annealing device which comprises an upper device shell, a lower device shell, an oxidation annealing chamber, a supporting and heat insulating device and a heating ring. The high-temperature ozone oxidation annealing device provided by the invention can be applied to a semiconductor integrated circuit chip manufacturing process, fills the blank of the type of equipment, greatly promotes the popularization and application of the ozone oxidation annealing technology in the integrated circuit chip development and manufacturing processes in universities, scientific research institutions and industrial industries, and accelerates the development progress of the integrated circuit chips.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuits and manufacturing thereof, and particularly relates to a high-temperature ozone oxidation annealing device.
Background
With the rapid development of integrated circuits and manufacturing techniques thereof, the size of transistors is smaller and smaller, the integration level of chips is higher and higher, and the performance of the chips is better. With the continuous reduction of transistor feature size, the conventional gate SiO2The thickness of the oxide layer is thinner and thinner, and the leakage current is more and more serious, thereby weakening the control of a channel by a gate and increasing the power consumption of a transistor. The effective solution to this problem in the industry is to use a new dielectric material with high dielectric constant (high-k) to replace the conventional SiO2A dielectric material. In addition, germanium (Ge) has been widely studied due to its much higher electron and hole mobility than silicon (Si) and lower thermal budget than Si, and is expected to be the most potential candidate for replacing Si. Unfortunately, the interface characteristics of the high-k/Ge stack are not ideal, which makes the large-scale application of Ge materials very limited. An effective solution to this problem is to introduce an ultra-thin GeO layer between the high-k/Ge stacks2A transition layer of high-k/GeO2the/Ge laminated structure is used for obtaining a high-quality interface and further obtaining high channel carrier mobility, so that the driving current of the transistor is greatly improved.
In the present invention or published research, high-k/GeO2There are generally two methods of fabricating the/Ge stack. One method is to directly oxidize the Ge surface by means of the traditional tube furnace equipment by adopting a thermal oxidation process to form a layer of GeO2Then again in GeO2And depositing a high-k dielectric layer with a certain thickness on the surface. The method has the disadvantages that the Ge surface is directly oxidized, the oxidation rate cannot be controlled, and ultrathin GeO is difficult to obtain2And a transition layer. Furthermore, the atomic layer deposition process is subsequently adopted to deposit the GeO2The formed GeO can be damaged in the process of depositing a high-k dielectric layer on the surface2Degraded GeO2The performance of (c). Another method is to deposit an ultra-thin high-k dielectric layer on the Ge surface as a barrier layer, and then to make the plasma generated by Electron Cyclotron Resonance (ECR) pass through the ultra-thin high-k dielectric layer to carry out the process of the Ge surfaceOxidizing to form ultra-thin GeO2And finally, depositing a high-k dielectric layer by using an atomic layer to reach the required thickness. The obvious disadvantages of the method are that expensive electron cyclotron resonance equipment is needed to generate plasma, the equipment is large in size, and a large laboratory space is needed to be matched for arranging the equipment and peripheral facilities such as a vacuum pump set, a cooling system and the like. In addition, the equipment has extremely high requirements on plant facilities such as water, electricity, gas and the like, and the equipment is difficult to popularize and apply in the laboratory popularization industry due to a plurality of restriction factors.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a high-temperature ozone oxidation annealing device, which has the technical scheme as follows:
a high-temperature ozone oxidation annealing device comprises an upper device shell, a lower device shell, an oxidation annealing chamber, a supporting and heat-insulating device and a heating ring;
the device comprises a device upper shell, a device lower shell, a device oxidation annealing chamber and a device oxidation annealing chamber, wherein the device upper shell is provided with furnace tube upper half holes on two sides;
the device comprises an oxidation annealing chamber, a gas inlet end flange, a quartz furnace tube, an ultraviolet lamp tube bracket, a probe thermocouple and a gas outlet end flange, wherein the gas inlet end flange and the gas outlet end flange are fixed at two ends of the quartz furnace tube;
the heating ring surrounds the outer wall of the quartz furnace tube and at least comprises a coating layer, a heat insulation layer and a ceramic layer from outside to inside, a resistance wire penetrates through the ceramic layer, after the heating ring is electrified, heat emitted by the resistance wire is diffused to the ceramic layer, the ceramic layer uniformly transfers the heat to the quartz furnace tube, and then the quartz furnace tube transfers the heat to oxygen entering the tube;
the supporting and heat insulating device comprises a supporting unit and a heat insulating unit which are fixedly connected, the heating ring is fixed on the supporting unit, the supporting unit is fixed on a lower shell of the device, and the heat insulating unit is arranged between the heating ring and the supporting unit;
furthermore, the supporting and heat insulating device comprises a heating ring heat insulating plate, an upper supporting plate, an upper heat insulating plate, a middle supporting plate, a lower heat insulating plate and a quartz tube heat insulating ring;
the cross section of the upper supporting plate is inverted T-shaped, the heating ring is fixed on a vertical cross beam of the upper supporting plate through a heating ring heat insulation plate, and a certain distance is reserved between the two ends of the upper supporting plate and the two side surfaces of the lower shell of the device, so that the heat of the heating ring is prevented from being transferred to the lower shell of the device through the upper supporting plate;
the upper heat insulation plate is arranged on the upper surface of the upper support plate, the middle heat insulation plate is arranged between the upper heat insulation plate and the middle support plate, the lower surface of the middle support plate is provided with the lower heat insulation plate, and the screw rod sequentially penetrates through the upper heat insulation plate, the upper support plate, the middle heat insulation plate, the middle support plate and the lower heat insulation plate from top to bottom so as to fix the upper heat insulation plate, the upper support plate; the diameters of the round holes on the upper supporting plate and the middle supporting plate are larger than the outer diameter of the screw; the two ends of the middle supporting plate are provided with bent edges, the bent edges are provided with oblong round holes capable of adjusting the height up and down, and screws penetrate through the round holes at the two ends of the middle supporting plate and the round holes at the two side surfaces of the lower shell of the device and are fixed in the lower shell of the device;
the quartz tube heat insulation ring is arranged between the inner ring of the tube hole of the furnace and the outer ring of the quartz furnace tube, and a gap is reserved between the quartz tube heat insulation ring and the tube hole.
Furthermore, the front surface of the lower shell of the device is provided with a device door, a door lock, a digital display temperature controller and an ultraviolet lamp button self-locking switch which can be opened and closed, a lower support plate is arranged in the lower shell of the device, and a contactor is arranged on the lower support plate;
the input end of the contactor is connected with an external power supply, the output end of the contactor is respectively connected to the digital display temperature controller and the heating ring, one output end of the digital display temperature controller is connected with the electrode corresponding to the probe thermocouple, and the other output end of the digital display temperature controller feeds back a set temperature signal measured by the probe thermocouple to the contactor, so that the contactor is switched on and off the power supply. The ultraviolet lamp tube is connected with the corresponding electrode of the ballast through the vacuum signal connector, the power input end of the ballast is connected with the electrode at the output end of the self-locking switch of the ultraviolet lamp button, and the input end of the self-locking switch of the ultraviolet lamp button is connected with an external power supply.
Furthermore, the top and the back of the upper shell of the device and the back of the lower shell of the device are both provided with heat dissipation hole arrays.
Furthermore, the front surface of the upper shell of the device is provided with a heat insulation handle.
Furthermore, a probe thermocouple insertion hole, an air inlet pipe opening and a vacuum signal connector are formed in the air inlet end flange.
Furthermore, the coating layer of the heater is made of iron sheet, the heat insulation layer is made of asbestos, and the ceramic layer is formed by connecting ceramic sheets in series on the resistance wire to form a ring.
The invention has the following beneficial effects:
(1) the high-temperature ozone oxidation annealing device provided by the invention can be applied to high-temperature ozone oxidation annealing equipment of a semiconductor integrated circuit chip manufacturing process, fills the blank of the equipment, greatly promotes the popularization and application of the ozone oxidation annealing technology in integrated circuit chip development and manufacturing processes in universities, scientific research institutions and industrial industries, and accelerates the development and development progress of integrated circuit chips.
(2) The ultraviolet lamp with specific wavelength and specific size and shape is used as the ozone generator for high-temperature ozone oxidation annealing, and compared with the existing high-voltage discharge type and electrolytic ozone generators, the ozone generator has the advantages of simple structure, small and exquisite appearance and low energy consumption.
(3) The device of the invention selects the high-temperature ultraviolet resistant lamp tube which is slender and rod-shaped, and the lamp tube is arranged in the quartz furnace tube with high temperature and high oxygen concentration, the ultraviolet rays emitted by the lamp tube can be fully absorbed by peripheral oxygen molecules, and the generated high-concentration ozone can act on a sample in the furnace tube in real time to carry out oxidation or annealing treatment on the surface film of the sample, thereby improving the ozone utilization rate and overcoming the defects of high ozone decomposition speed, low utilization efficiency and the like.
(4) The device adopts the cylindrical double-ceramic heating ring to wrap the quartz tube to heat the high-purity oxygen in the quartz tube, the heating is uniform, and the temperature can be accurately controlled. The two ceramic heating rings are separated by a certain distance, and an observation window is reserved in the middle of the two ceramic heating rings, so that the sample placement condition in the quartz tube can be conveniently observed.
(5) The device of the invention adopts the rod-shaped thermocouple, the thermocouple is arranged in the quartz tube to directly contact with the high-purity oxygen for temperature measurement, the feedback temperature is more accurate, and the experimental result is more reliable.
(6) The device adopts the vacuum signal connector, the cylindrical vacuum signal connector is welded in the circular hole on the flange plate at the air inlet end, one end of the vacuum signal connector is connected with the electrode of the lamp tube in the quartz tube, and the other end of the vacuum signal connector is connected with the power supply outside the quartz tube, so that the tightness of the oxidizing annealing environment in the quartz tube is ensured while the power is supplied to the lamp tube.
Drawings
The invention is further explained below with reference to the figures and examples;
FIG. 1 is an overall external view of the apparatus of the present invention;
FIG. 2 is a view of the housing of the upper cover of the device of the present invention;
FIG. 3 is a diagram of the lower housing and the oxidation annealing chamber of the apparatus of the present invention;
FIG. 4 is a view of the structure of the lower case and the interior of the device of the present invention;
FIG. 5 is a schematic view of an oxidation annealing chamber and the interior of the apparatus according to the present invention;
FIG. 6 is a view of the inlet flange of the apparatus of the present invention;
FIG. 7 is a cross-sectional view of an oxidation annealing chamber and a thermal insulation apparatus of the present invention.
In the figure, an upper device shell 1, a lower device shell 2, a device oxidation annealing chamber 3, a supporting and heat insulating device 4, a heating ring 5, an upper shell heat dissipation hole array 101, a furnace tube upper half hole 102, a heat insulating handle 103, a furnace tube lower half hole 201, a device door 202, a device door lock 203, a digital display temperature controller 204, an ultraviolet lamp button self-locking switch 205, a back heat dissipation hole array 206, a lower supporting plate 207, a contactor 208, an air inlet end flange 301, a quartz furnace tube 302, an ultraviolet lamp tube 303, an ultraviolet lamp tube bracket 304, a probe thermocouple 305, an air outlet end flange 306, a sample 307, a heating ring heat insulating plate 401, an upper supporting plate 402, an upper middle heat insulating plate 404, a middle supporting plate 405, a lower heat insulating plate 406, a quartz tube heat insulating ring 407, a ring-shaped ceramic layer 501, a heat insulating asbestos layer 502, an iron sheet coating layer 503, a thermocouple probe insertion hole 3011, outlet 3051.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments, and the objects and effects of the present invention will become more apparent, it being understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.
As shown in figures 1 and 7, the high-temperature ozone oxidation annealing device comprises an upper device shell 1, a lower device shell 2, an oxidation annealing chamber 3, a supporting and heat insulating device 4 and a heating ring 5.
As shown in fig. 1, the upper device casing 1 and the lower device casing 2 are connected by a hinge at the back, and the upper device casing 1 and the lower device casing 2 are fixed at the front of the casings by two movable hasps. The upper shell 1 and the lower shell 2 of the device are both made of stainless steel, the surfaces of the upper shell and the lower shell are subjected to plastic spraying treatment, and the upper shell and the lower shell are attractive and the shells are protected from rusting.
As shown in fig. 2, a heat insulating handle 103 is attached to the front surface of the upper case 1 of the apparatus to be able to withstand high temperature and heat for opening and closing the upper case 1. The side surface of the upper shell 1 of the device is provided with a furnace tube upper half hole 102, and the top part is provided with an upper shell heat dissipation hole array 101 for dissipating heat generated by the heating ring 5 in the shell in the working process.
As shown in fig. 3, an openable and closable device door 202 is installed on the front surface of the device lower case 2, and the device door 202 is opened to allow the internal components of the device to be observed, installed, and maintained. Spring bolts are respectively arranged at the upper and lower corners of the right frame of the panel of the device door 202 and used for connecting the device door 202 and the device lower shell 2, and the device door 202 can be taken out and installed by pulling and inserting the bolts. A door lock 203 is installed on the left side of the device door 202 to close the device door 202 and protect internal components. The front surface of the device door 202 is provided with a digital display temperature controller 204 for setting the oxidation annealing temperature and observing the actual temperature in the quartz furnace tube 302 in real time. The front surface of the device door 202 is provided with a circular ultraviolet lamp button self-locking switch 205, and the front surface of the device door is provided with an indicator lamp for switching an ultraviolet lamp tube 303 in a quartz furnace tube 302, so that two modes of ozone oxidation annealing and oxygen oxidation annealing can be switched.
As shown in fig. 4, furnace tube lower half holes 201 are opened at two sides of the device lower shell 2, and form furnace tube holes together with the furnace tube upper half holes 102 for installing the device oxidation annealing chamber 3. The back of the lower shell 2 of the device is distributed with a back radiating hole array 206 for timely radiating heat generated in the working process of the heating ring 5. The bottom of the lower casing 2 of the device is provided with a lower support plate 207, the contactor 208 is fixed on the lower support plate 207, two ends of the lower support plate 207 are provided with bent edges, the bent edges are provided with oblong round holes capable of adjusting the height up and down, screws penetrate through the round holes at two ends of the lower support plate 207 and the round holes at two side faces of the lower casing 2 of the device, and the lower support plate 207 and the contactor 208 are fixed inside the lower casing 2 of the device.
As shown in fig. 3 to 7, the apparatus oxidation annealing chamber 3 includes a gas inlet flange 301, a quartz furnace tube 302, an ultraviolet lamp tube 303, an ultraviolet lamp tube holder 304, a probe thermocouple 305, and a gas outlet flange 306. The gas inlet end flange 301 and the gas outlet end flange 306 are fixedly connected to two ends of the quartz furnace tube 302 respectively, the gas inlet end flange 301 is provided with a probe thermocouple insertion hole 3011, a gas inlet pipe port 3012 and a vacuum signal connector 3013, the gas outlet end flange 306 is provided with a gas outlet pipe port 3051, the ultraviolet lamp tube support 304 is arranged above the inside of the quartz furnace tube 302, and the ultraviolet lamp tube 303 is inserted into the upper part of the inside of the quartz furnace tube 302 through the probe thermocouple insertion hole 3011 and supported on the ultraviolet lamp tube support 304; the probe thermocouple 305 is inserted into the quartz furnace tube 302 through the probe thermocouple insertion hole 3011.
The sealing function of the vacuum signal connector 3013 can ensure that high-purity gas in the quartz furnace tube 302 cannot directly contact with outside gas when the ultraviolet lamp tube 303 in the quartz furnace tube 302 is connected with an external power supply of the quartz furnace tube 302. The flange upper air inlet pipe port 3012 is connected to the oxygen pipeline through a flowmeter, and the flowmeter can accurately control the flow rate of oxygen entering the furnace tube. An external thread air inlet pipe is welded at the position of the probe thermocouple insertion hole 3011, an internal thread sleeve is arranged at the root of the probe thermocouple 305, and an O-shaped sealing ring is arranged in the sleeve. The probe thermocouple 305 is firstly inserted into the sleeve and the O-shaped sealing ring in the sleeve, then the external thread air inlet pipe is inserted, finally the internal thread sleeve is screwed on the external thread air inlet pipe, and the probe thermocouple 305 is fixed on the external thread air inlet pipe through the compression sealing ring and plays a role in sealing.
The ultraviolet lamp tube 303 can generate high-concentration ozone, the wavelength of ultraviolet rays is 185nm, the power is 40W, the lamp tube is made of high-temperature-resistant quartz, and the ultraviolet transmittance of the lamp tube is over 95 percent. The lamp tube is a single-end four-needle lamp tube, two ends of the lamp tube are respectively provided with a high-temperature resistant ceramic protective sleeve, one end of the lamp tube is provided with four electrode needles, the four electrode needles are connected with four binding posts of a vacuum signal connector 3013 on the air inlet end flange 301 on one side inside the quartz furnace tube 302 through four-hole ceramic connectors and four high-temperature resistant conducting wires on the ceramic connectors, and the four electrodes of the vacuum signal connector 3013 on the outer side of the quartz furnace tube 302 are connected with the ballast. The vacuum signal connector 3013 functions to seal gas while turning on electrical signals. The probe type thermocouple inside the quartz furnace tube 302 is directly contacted with the process gas, and the probe is just arranged right above the sample 307, so that the measured gas temperature is more real-time and more accurate. The sample 307 subjected to the oxidation process may be directly fed into the quartz furnace tube 302, or the sample 307 may be placed in a quartz boat of an appropriate size, and then the quartz boat and the sample are fed into the quartz furnace tube 302.
As shown in fig. 3, two heating rings 5 are disposed in the middle of the quartz furnace tube 302 at a certain distance, and a section of the quartz furnace tube 302 exposed between the two heating rings 5 serves as an observation window for observing the position of the sample 307 in the quartz furnace tube 302, the on/off state of the ultraviolet lamp tube 303, and the like.
As shown in fig. 7, the heating ring 5 includes an iron sheet coating layer 503, a heat preservation asbestos layer 502 and an annular ceramic layer 501 from outside to inside, the annular ceramic layer 501 directly wraps the outer wall of the quartz furnace tube 302, a resistance wire penetrates through the inside of the annular ceramic layer 501, after the heating ring 5 is energized, heat emitted by the resistance wire is diffused to the annular ceramic layer 501, the annular ceramic layer 501 uniformly transfers the heat to the quartz furnace tube 302, and then the quartz furnace tube 302 transfers the heat to oxygen entering the tube, thereby playing a role in high-temperature oxidation annealing. The annular ceramic layer 501 is formed by connecting ceramic plates in series on the resistance wire to form an annular shape. The iron sheet coating layer 503 has ears with a certain width, round holes are processed on the ears, and the heating ring 5 is fixed on the vertical beam of the upper support plate 402 by screws.
As shown in fig. 3 and 7, the supporting and heat insulating device 4 includes a heating coil heat insulating plate 401, an upper supporting plate 402, an upper heat insulating plate 403, an intermediate heat insulating plate 404, an intermediate supporting plate 405, a lower heat insulating plate 406, and a quartz tube heat insulating ring 407, wherein the cross-section of the upper supporting plate 402 is inverted T-shaped, the heating coil 5 is fixed on a vertical beam of the upper supporting plate 402 through the heating coil heat insulating plate 401, and both ends of the upper supporting plate 402 are spaced apart from both side surfaces of the device lower case 2, thereby preventing the heat of the heating coil from being transferred to the device lower case 2 through the upper supporting plate 402.
An upper heat insulation plate 403 is disposed on the upper surface of the upper support plate 402, an intermediate heat insulation plate 404 is disposed between the upper heat insulation plate 403 and the intermediate support plate 405, a lower heat insulation plate 406 is disposed on the lower surface of the intermediate support plate 405, and a screw passes through the upper heat insulation plate 403, the upper support plate 402, the intermediate heat insulation plate 404, the intermediate support plate 405, and the lower heat insulation plate 406 in sequence from top to bottom, thereby fixing them. The screw head is separated from the upper support plate 402 by the upper heat insulation plate 403, so that heat is prevented from being transferred to the screw head through the upper support plate 402 and further transferred to the screw through the screw head; the lower heat insulation plate 406 separates the nut from the middle support plate 405, preventing heat of the nut from being transferred to the middle support plate 405; the intermediate thermal insulating plate 404 serves to support the entire supporting and insulating device 4 while preventing heat from being transferred from the upper support plate 402 to the intermediate support plate 405 and thus to the device lower case 2. And the diameter of the round holes on the upper support plate 402 and the middle support plate 405 is larger than the outer diameter of the screw, thereby ensuring that the screw rod is not in direct contact with the upper support plate 402 and the middle support plate 405 and preventing heat transfer. The two ends of the middle support plate 405 are provided with bent edges, the bent edges are provided with oblong round holes capable of adjusting the height up and down, and screws penetrate through the round holes at the two ends of the middle support plate 405 and the round holes at the two side surfaces of the lower shell 2 of the device and are fixed inside the lower shell 2 of the device.
The quartz tube heat insulation ring 407 is arranged between the inner ring of the tube hole of the furnace and the outer ring of the quartz furnace tube 302, and a gap is left between the quartz tube heat insulation ring 405 and the tube hole, so that the heat of the quartz furnace tube 302 is prevented from being directly transmitted to the shell in the working process of the device, and the scald of an operator or the damage of the plastic spraying on the outer surface of the shell due to heating is avoided.
The electric control system of the device is connected with the electricity in the following mode: the 220V household power supply is firstly connected with the input end of the contactor 208, and the output end of the contactor 208 is respectively connected to the digital display temperature controller 204 and the heating ring 5. One output end of the digital display temperature controller 204 is connected with an electrode corresponding to the probe thermocouple 305, and the other output end feeds back a set temperature signal measured by the probe thermocouple 305 to the contactor 208, so that the contactor 208 is powered on and off. The ultraviolet lamp tube 303 is connected with a corresponding electrode of the ballast through a vacuum signal connector 3013, the power input end of the ballast is connected to the electrode at the output end of the ultraviolet lamp button self-locking switch 205, and the input end of the ultraviolet lamp button self-locking switch 205 is connected with a 220V household power supply.
The working principle of the device of the invention is as follows:
and oxidizing the surface of the semiconductor by utilizing the strong oxidizing property of the high-temperature ozone to obtain a required oxidizing layer.
And annealing the high-k oxide layer by utilizing the strong oxidizing property of the high-temperature ozone, so that the oxygen vacancy defect in the high-k oxide layer is reduced, and the insulating property of the oxide layer is improved.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and although the invention has been described in detail with reference to the foregoing examples, it will be apparent to those skilled in the art that various changes in the form and details of the embodiments may be made and equivalents may be substituted for elements thereof. All modifications, equivalents and the like which come within the spirit and principle of the invention are intended to be included within the scope of the invention.
Claims (7)
1. The high-temperature ozone oxidation annealing device is characterized by comprising five parts, namely a device upper shell (1), a device lower shell (2), a device oxidation annealing chamber (3), a supporting and heat insulating device (4) and a heating ring (5);
the device is characterized in that furnace tube upper half holes (102) are formed in two sides of the device upper shell (1), furnace tube lower half holes (201) are formed in two sides of the device lower shell (2), the device upper shell (1) and the device lower shell (2) are buckled together, and the furnace tube upper half holes (102) and the furnace tube lower half holes (201) form a furnace tube hole for placing the device oxidation annealing chamber (3);
the device oxidation annealing chamber (3) comprises a gas inlet end flange (301), a quartz furnace tube (302), an ultraviolet lamp tube (303), an ultraviolet lamp tube bracket (304), a probe thermocouple (305) and a gas outlet end flange (306), wherein the gas inlet end flange (301) and the gas outlet end flange (306) are fixed at two ends of the quartz furnace tube (302), the ultraviolet lamp tube bracket (304) is arranged above the inner part of the quartz furnace tube (302), the ultraviolet lamp tube (303) is supported on the ultraviolet lamp tube bracket (304), and the probe thermocouple (305) penetrates through a probe thermocouple insertion hole (3011) on the gas inlet end flange (301) and is placed in the quartz furnace tube (302);
the heating ring (5) surrounds the outer wall of the quartz furnace tube (302), and at least comprises a coating layer (503), a heat preservation layer (502) and a ceramic layer (501) from outside to inside, a resistance wire penetrates through the interior of the ceramic layer (501), after the heating ring (5) is electrified, heat emitted by the resistance wire is diffused to the ceramic layer (501), the ceramic layer (501) uniformly transfers the heat to the quartz furnace tube (302), and then the quartz furnace tube (302) transfers the heat to oxygen entering the tube.
The supporting and heat insulating device (4) comprises a supporting unit and a heat insulating unit which are fixedly connected, the heating ring (5) is fixed on the supporting unit, the supporting unit is fixed on the lower shell (2) of the device, and the heat insulating unit is arranged between the heating ring (5) and the supporting unit.
2. The high-temperature ozonation annealing device according to claim 1, wherein the supporting and heat insulating device (4) comprises a heating ring heat insulating plate (401), an upper supporting plate (402), an upper heat insulating plate (403), an intermediate heat insulating plate (404), a middle supporting plate (405), a lower heat insulating plate (406), and a quartz tube heat insulating ring (407);
the section of the upper support plate (402) is inverted T-shaped, the heating ring (5) is fixed on a vertical beam of the upper support plate (402) through a heating ring heat insulation plate (401), and a certain distance is reserved between the two ends of the upper support plate (402) and the two side surfaces of the lower shell (2) of the device, so that the heat of the heating ring is prevented from being transferred to the lower shell (2) of the device through the upper support plate (402);
the upper heat insulation plate (403) is arranged on the upper surface of the upper support plate (402), the middle heat insulation plate (404) is arranged between the upper heat insulation plate (403) and the middle support plate (405), the lower surface of the middle support plate (405) is provided with the lower heat insulation plate (406), and the screw rod sequentially penetrates through the upper heat insulation plate (403), the upper support plate (402), the middle heat insulation plate (404), the middle support plate (405) and the lower heat insulation plate (406) from top to bottom so as to fix the upper heat insulation plate (403), the middle heat; the diameters of the round holes on the upper support plate (402) and the middle support plate (405) are larger than the outer diameter of the screw; two ends of the middle support plate (405) are provided with bent edges, the bent edges are provided with oblong round holes capable of adjusting the height up and down, and screws penetrate through the round holes at the two ends of the middle support plate (405) and the round holes at the two side faces of the lower shell (2) of the device and are fixed in the lower shell (2) of the device;
the quartz tube heat insulation ring (407) is arranged between the inner ring of the tube hole of the furnace tube and the outer ring of the quartz furnace tube (302), and a gap is reserved between the quartz tube heat insulation ring (405) and the tube hole.
3. The high-temperature ozone oxidation annealing device according to claim 1, wherein the front surface of the device lower shell 2 is provided with a device door (202), a door lock (203), a digital display temperature controller (204) and an ultraviolet lamp button self-locking switch (205) which can be opened and closed, a lower support plate (207) is arranged inside the device lower shell (2), and a contactor (208) is arranged on the lower support plate (207);
the input end of the contactor (208) is connected with an external power supply, the output end of the contactor is respectively connected to the digital display temperature controller (204) and the heating ring (5), one output end of the digital display temperature controller (204) is connected with an electrode corresponding to the probe thermocouple (305), the other output end of the digital display temperature controller returns a set temperature signal measured by the probe thermocouple (305) to the contactor (208), so that the contactor (208) is switched on and off the power supply, the ultraviolet lamp tube (303) is connected with an electrode corresponding to the ballast through a vacuum signal connector (3013), the power supply input end of the ballast is connected to an electrode at the output end of the ultraviolet lamp button self-lockable switch (205), and the input end of the ultraviolet lamp button self-lockable switch (205).
4. The high-temperature ozonation annealing device according to claim 1, wherein the top and back of the upper device case (1) and the back of the lower device case (2) are both provided with an array of heat dissipation holes.
5. A high-temperature ozonation annealing unit according to claim 1, wherein the front surface of the unit upper case (1) is provided with a heat insulation handle (103).
6. The high-temperature ozone oxidation annealing device according to claim 1, wherein the inlet end flange (301) is provided with a probe thermocouple insertion hole (3011), an inlet pipe orifice (3012) and a vacuum signal connector (3013).
7. The high-temperature ozone oxidation annealing device as claimed in claim 1, wherein the coating layer (503) of the heater (5) is made of iron sheet, the insulating layer (502) is made of asbestos, and the ceramic layer (501) is formed in a ring shape by connecting ceramic sheets in series on the resistance wire.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256957A (en) * | 2007-02-14 | 2008-09-03 | 东京毅力科创株式会社 | Heat processing method and apparatus for semiconductor process |
| CN102002758A (en) * | 2009-09-03 | 2011-04-06 | 北京中科信电子装备有限公司 | Novel rapid wafer annealing device |
| CN103014873A (en) * | 2012-09-18 | 2013-04-03 | 苏州四海常晶光电材料有限公司 | Pure-oxygen-atmosphere annealing device and method |
| CN204369608U (en) * | 2014-12-25 | 2015-06-03 | 北京桑德环境工程有限公司 | For the ultraviolet lamp module device of O3 catalytic oxidation reaction |
| CN105695683A (en) * | 2016-02-25 | 2016-06-22 | 浙江师范大学 | Stress annealing method and device capable of accurately controlling annealing process parameters |
| CN106158605A (en) * | 2015-05-13 | 2016-11-23 | 株式会社思可林集团 | Heat treatment method and annealing device |
| CN106435742A (en) * | 2016-10-21 | 2017-02-22 | 北京鼎泰芯源科技发展有限公司 | Annealing equipment and annealing process thereof |
| CN108417474A (en) * | 2018-01-24 | 2018-08-17 | 锦州华昌光伏科技有限公司 | Crystalline silicon thermal oxidation technology, system and crystal silicon solar energy battery thermal oxidation technology |
-
2020
- 2020-05-18 CN CN202010419231.1A patent/CN111463154B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256957A (en) * | 2007-02-14 | 2008-09-03 | 东京毅力科创株式会社 | Heat processing method and apparatus for semiconductor process |
| JP2008227454A (en) * | 2007-02-14 | 2008-09-25 | Tokyo Electron Ltd | Treatment method and treatment apparatus of substance to be treated |
| CN102002758A (en) * | 2009-09-03 | 2011-04-06 | 北京中科信电子装备有限公司 | Novel rapid wafer annealing device |
| CN103014873A (en) * | 2012-09-18 | 2013-04-03 | 苏州四海常晶光电材料有限公司 | Pure-oxygen-atmosphere annealing device and method |
| CN204369608U (en) * | 2014-12-25 | 2015-06-03 | 北京桑德环境工程有限公司 | For the ultraviolet lamp module device of O3 catalytic oxidation reaction |
| CN106158605A (en) * | 2015-05-13 | 2016-11-23 | 株式会社思可林集团 | Heat treatment method and annealing device |
| CN105695683A (en) * | 2016-02-25 | 2016-06-22 | 浙江师范大学 | Stress annealing method and device capable of accurately controlling annealing process parameters |
| CN106435742A (en) * | 2016-10-21 | 2017-02-22 | 北京鼎泰芯源科技发展有限公司 | Annealing equipment and annealing process thereof |
| CN108417474A (en) * | 2018-01-24 | 2018-08-17 | 锦州华昌光伏科技有限公司 | Crystalline silicon thermal oxidation technology, system and crystal silicon solar energy battery thermal oxidation technology |
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