CN111451594B - Welding method of high-order mode absorber - Google Patents
Welding method of high-order mode absorber Download PDFInfo
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- CN111451594B CN111451594B CN202010318028.5A CN202010318028A CN111451594B CN 111451594 B CN111451594 B CN 111451594B CN 202010318028 A CN202010318028 A CN 202010318028A CN 111451594 B CN111451594 B CN 111451594B
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- welding
- oxygen
- free copper
- silicon carbide
- order mode
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
Abstract
The invention discloses a welding method of a high-order mode absorber, which comprises the following steps: step 1, welding an oxygen-free copper bar to a kovar plate 4J 33; step 2, carrying out secondary processing on the oxygen-free copper bar and the kovar plate 4J 33; and 3, welding the silicon carbide on the copper strip. In the step 2, the surfaces of the oxygen-free copper bar and the kovar plate 4J33 after welding are ground flat for welding in the step 3; step 3 comprises the steps of firstly coating titanium powder on the surface of silicon carbide, then welding the silicon carbide and the oxygen-free copper bar, and finally manufacturing the high-order mode absorber. The welding method of the high-order mode absorber is simple and easy to realize, and has the advantages of high production success rate, short period, high product strength and good reliability; meanwhile, the use of chemicals is less, the production risk is reduced, and the environment protection is facilitated.
Description
Technical Field
The invention relates to a preparation method of a silicon carbide (SiC) absorber for absorbing a high-order mode of a high-frequency cavity, in particular to a welding method of a high-order mode absorber.
Background
In the superconducting high-frequency cavity, along with the increase of beam energy of the high-frequency cavity, a high-order mode field excited by the beam in the high-frequency cavity is increased, and if the high-order mode field is not absorbed and attenuated, the stability of the beam is influenced, and even the beam is vibrated and lost.
Therefore, it is urgently needed to provide a welding method of a high-order mode absorber capable of absorbing and attenuating high-order mode power and ensuring beam stability.
Disclosure of Invention
The invention aims to provide a welding method of a high-order mode absorber, which is simple and easy to realize, and has high production success rate, short period, high product strength and good reliability; meanwhile, the use of chemicals is less, the production risk is reduced, and the environment protection is facilitated.
In order to achieve the above object, the present invention provides a welding method of a higher order mode absorber, comprising:
step 1, welding an oxygen-free copper bar to a kovar plate 4J 33;
step 2, carrying out secondary processing on the oxygen-free copper bar and the kovar plate 4J 33;
step 3, welding silicon carbide on the copper bar;
in the step 2, the surfaces of the oxygen-free copper bars and the surface of the kovar plate 4J33 after welding are ground flat for welding in the step 3; step 3 comprises the steps of firstly coating titanium powder on the surface of silicon carbide, then welding the silicon carbide and the oxygen-free copper bar, and finally manufacturing the high-order mode absorber.
Preferably, step 1 is brazing the oxygen free copper strip and kovar plate 4J33 in a vacuum furnace using DHLAgCuPd28-20 solder.
Preferably, the DHLAgCuPd28-20 solder is two pieces of solder with a thickness of 0.05 mm.
Preferably, the tool and the Kovar plate groove are used for positioning the gap between the oxygen-free copper bars before welding, and meanwhile, the tool pressing block is used for pressing the oxygen-free copper bars in the welding process.
Preferably, step 2 comprises: firstly, grinding an oxygen-free copper strip, a silicon carbide welding surface and the lower surface of a kovar plate 4J33 on a grinding machine to ensure the thickness and parallelism of a part; and secondly, carrying out secondary processing on the oxygen-free copper bar, namely processing the end face of the welded part of the oxygen-free copper bar into a square and removing burrs for welding.
Preferably, the step 3 comprises welding two DHLAgCu28 welding sheets with the thickness of 0.05mm and the same size as the silicon carbide sheet and the silicon carbide vacuum furnace coated with titanium powder on the welding surface of the oxygen-free copper strip and the silicon carbide, and pressing the silicon carbide by a tool pressing block in the welding process to ensure the bonding.
Preferably, the thickness ground by the grinding machine is 0.1-0.2 mm.
Preferably, the cube is a cube 2mm on a side.
Preferably, the size of the silicon carbide wafer is 65X 30mm, and the thickness is 4 mm; and a plurality of silicon carbide wafers are arranged at intervals with a pitch of 2.5 mm.
According to the technical scheme, the high-frequency absorption material attached with the silicon carbide is arranged on the pipeline of the beam cavity, the high-order mode power coupled from the cavity is attenuated and absorbed, the high-order mode power is immediately converted into heat energy, and finally the heat energy is taken away through circulating water, so that the purpose of absorbing the high-order mode in the cavity is achieved.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a high order mode absorber assembly in a welding method for a high order mode absorber according to the present invention;
FIG. 2 is a schematic view of the welding of oxygen-free copper bar and kovar plate 4J33 in the welding method of the high order mode absorber provided by the invention;
FIG. 3 is a schematic view of secondary processing after welding of an oxygen-free copper bar in the welding method of the high-order mode absorber provided by the invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In the present invention, unless otherwise specified, the directional words "upper, lower" and the like included in the terms merely represent the orientation of the terms in the conventional use state or are colloquially known by those skilled in the art, and should not be construed as limiting the terms.
Referring to fig. 1 to 3, the present invention provides a welding method of a high order mode absorber, including:
step 1, welding an oxygen-free copper bar to a kovar plate 4J 33;
step 2, carrying out secondary processing on the oxygen-free copper bar and the kovar plate 4J 33;
step 3, welding silicon carbide on the copper bar;
in the step 2, the surfaces of the oxygen-free copper bars and the surface of the kovar plate 4J33 after welding are ground flat for welding in the step 3; step 3 comprises the steps of firstly coating titanium powder on the surface of silicon carbide, then welding the silicon carbide and the oxygen-free copper bar, and finally manufacturing the high-order mode absorber.
Specifically, step 1 is brazing the oxygen-free copper strip and the kovar plate 4J33 in a vacuum furnace using DHLAgCuPd28-20 solder.
The DHLAgCuPd28-20 solder is two solder sheets with the thickness of 0.05 mm.
Further, the gap between the oxygen-free copper bars is positioned by utilizing the tool and the Kovar plate groove before welding, and meanwhile, the oxygen-free copper bars are pressed by using a tool pressing block in the welding process.
The step 2 comprises the following steps: firstly, grinding an oxygen-free copper strip, a silicon carbide welding surface and the lower surface of a kovar plate 4J33 on a grinding machine to ensure the thickness and parallelism of a part; and secondly, carrying out secondary processing on the oxygen-free copper bar, namely processing the end face of the welded part of the oxygen-free copper bar into a square and removing burrs for welding.
The step 3 comprises the following steps: and (3) welding two DHLAgCu28 welding sheets with the thickness of 0.05mm and the same size as the silicon carbide sheet and the titanium powder-coated silicon carbide vacuum furnace on the welding surface of the oxygen-free copper strip and the silicon carbide, and pressing the silicon carbide by using a tool pressing block in the welding process to ensure the attachment.
Wherein the thickness ground by the grinding machine is 0.1-0.2 mm.
The square is a cube with the side length of 2 mm.
The size of the silicon carbide wafer is 65 multiplied by 30mm, and the thickness is 4 mm; and a plurality of silicon carbide wafers are arranged at intervals with a pitch of 2.5 mm.
In one embodiment, the kovar plate 4J33 is soldered to an oxygen-free copper bar with DHLAgCuPd28-20 at about 900 deg.C, and the soldering process for the solder and the two materials is mature. When the reference temperature reaches 600 ℃, the expansion coefficient of the kovar plate 4J33 is 8.32 multiplied by 10 < -6 >/K, the expansion coefficient of the oxygen-free copper is 19.3 multiplied by 10 < -6 >/K, the difference between the two is large, the oxygen-free copper bar and the kovar plate expand simultaneously during high-temperature welding, and the expansion amount of the oxygen-free copper is large because the expansion coefficient of the oxygen-free copper is large. The oxygen-free copper had melted with the kovar plate 4J33 solder on cooling and the oxygen-free copper shrunk more than the kovar plate 4J33 so the stress between them pulled the kovar plate to bend to the oxygen-free copper side. And after welding, the surface of the oxygen-free copper bar needs to be ground flat for subsequent welding.
The titanium powder is evenly stirred by the nitrocotton solution and then evenly coated on the surface of the silicon carbide to be welded, so that the titanium element permeates into the silicon carbide (the silicon carbide is provided with a plurality of tiny holes inside), and the titanium powder is dried after being coated.
The welding solder of the silicon carbide and the oxygen-free copper bar is DHLAgCu28, when the welding solder is brazed in a vacuum furnace, titanium element permeating into the surface of the silicon carbide reacts with the DHLAgCu28 welding solder at about 810 ℃, a titanium-silver-copper alloy is formed on a joint surface, and the silicon carbide and the oxygen-free copper bar are welded together.
The silicon carbide has an expansion coefficient of 4.0X 10-6/K, the oxygen-free copper has an expansion coefficient of 19.3X 10-6/K, and the difference between the two is large. When the solder is melted and cooled, tensile stress exists between the solder and the oxygen-free copper strip, the welding surface of the oxygen-free copper strip is in multi-point contact, the oxygen-free copper is softer, the hardness of silicon carbide is high (the Mohs hardness of the silicon carbide is 9.5, and the Mohs hardness of the oxygen-free copper is 2.5-3.0), and the oxygen-free copper has micro deformation and does not influence the use.
Through the technical scheme, compared with other methods, the production and manufacturing of the absorber are simple and easy to realize, the production success rate is high, and the period is short; compared with the silicon carbide metallization preparation, less chemicals are used, the production risk is reduced, and the environment protection is facilitated; the absorber process design combines physical and chemical characteristics of materials, is ingenious in design, and has high strength and good reliability compared with silicon carbide metallization preparation.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (6)
1. A welding method of a high-order mode absorber is characterized by comprising the following steps:
step 1, welding an oxygen-free copper bar to a kovar plate 4J 33;
step 2, grinding the surfaces of the oxygen-free copper strips and the kovar plate 4J33 after welding is finished, and performing secondary processing on the oxygen-free copper strips and the kovar plate 4J33 for welding in the step 3;
step 3, welding the silicon carbide wafer on the copper bar;
step 3, firstly coating titanium powder on the surface of a silicon carbide wafer, then welding the silicon carbide wafer and an oxygen-free copper bar, and finally manufacturing a high-order mode absorber;
step 1, soldering an oxygen-free copper strip and a kovar plate 4J33 by using DHLAgCuPd28-20 solder in a vacuum furnace, wherein the DHLAgCuPd28-20 solder is two solder sheets with the thickness of 0.05 mm;
the gap between the oxygen-free copper bars is positioned by the tool and the Kovar plate groove before welding, and meanwhile, the oxygen-free copper bars are pressed by the tool pressing block in the welding process.
2. The welding method of the high order mode absorber as claimed in claim 1, wherein the step 2 comprises: firstly, grinding the upper surface of the oxygen-free copper bar and the lower surface of the kovar plate 4J33 on a grinding machine to ensure the thickness and parallelism of parts; and secondly, carrying out secondary processing on the oxygen-free copper bar, namely processing the end face of the welded part of the oxygen-free copper bar into a square and removing burrs for welding.
3. The welding method of the high order mode absorber as claimed in claim 1, wherein step 3 comprises welding two pieces of DHLAgCu28 solder with a thickness of 0.05mm and a size same as that of the silicon carbide piece with the titanium powder coated silicon carbide piece on the welding surface of the oxygen-free copper strip and the silicon carbide piece in a vacuum furnace, and pressing the silicon carbide piece with a tool pressing block during welding to ensure the bonding.
4. The method for welding a higher order mode absorber according to claim 2, wherein the thickness ground by the grinding machine is 0.1-0.2 mm.
5. The method for welding a higher order mode absorber as defined in claim 2, wherein the block is a 2mm square.
6. The method for welding a high order mode absorber according to claim 1, wherein the size of the silicon carbide wafer is 65 x 30mm, and the thickness thereof is 4 mm; and a plurality of silicon carbide wafers are arranged at intervals with a pitch of 2.5 mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010318028.5A CN111451594B (en) | 2020-04-21 | 2020-04-21 | Welding method of high-order mode absorber |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010318028.5A CN111451594B (en) | 2020-04-21 | 2020-04-21 | Welding method of high-order mode absorber |
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| CN111451594A CN111451594A (en) | 2020-07-28 |
| CN111451594B true CN111451594B (en) | 2022-04-12 |
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| JP2004342734A (en) * | 2003-05-14 | 2004-12-02 | Hoya Corp | Reflective mask blank and reflective mask |
| WO2017206137A1 (en) * | 2016-06-02 | 2017-12-07 | 深圳大学 | Heterojunction saturable absorber mirror and method for preparing same, and mode-locked fiber laser |
| CN108289369A (en) * | 2017-01-09 | 2018-07-17 | 莱尔德技术股份有限公司 | Absorber assemblies with dielectric spacer and corresponding assemble method |
| CN108686470A (en) * | 2018-08-13 | 2018-10-23 | 无锡英罗唯森科技有限公司 | Gas guiding mechanism and silicon carbide falling-film absorber |
| CN109592988A (en) * | 2019-01-24 | 2019-04-09 | 北京科技大学 | A kind of preparation method of diamond microtrabeculae enhancing high-heat conductivity graphite material |
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2020
- 2020-04-21 CN CN202010318028.5A patent/CN111451594B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004342734A (en) * | 2003-05-14 | 2004-12-02 | Hoya Corp | Reflective mask blank and reflective mask |
| WO2017206137A1 (en) * | 2016-06-02 | 2017-12-07 | 深圳大学 | Heterojunction saturable absorber mirror and method for preparing same, and mode-locked fiber laser |
| CN108289369A (en) * | 2017-01-09 | 2018-07-17 | 莱尔德技术股份有限公司 | Absorber assemblies with dielectric spacer and corresponding assemble method |
| CN207939823U (en) * | 2017-01-09 | 2018-10-02 | 莱尔德技术股份有限公司 | Absorber assemblies |
| CN108686470A (en) * | 2018-08-13 | 2018-10-23 | 无锡英罗唯森科技有限公司 | Gas guiding mechanism and silicon carbide falling-film absorber |
| CN109592988A (en) * | 2019-01-24 | 2019-04-09 | 北京科技大学 | A kind of preparation method of diamond microtrabeculae enhancing high-heat conductivity graphite material |
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