CN111441033A - Hand-touch control switch made of diamonds and preparation method thereof - Google Patents
Hand-touch control switch made of diamonds and preparation method thereof Download PDFInfo
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- CN111441033A CN111441033A CN202010090331.4A CN202010090331A CN111441033A CN 111441033 A CN111441033 A CN 111441033A CN 202010090331 A CN202010090331 A CN 202010090331A CN 111441033 A CN111441033 A CN 111441033A
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- diamond
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- 239000010432 diamond Substances 0.000 title claims abstract description 99
- 238000002360 preparation method Methods 0.000 title abstract description 3
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 91
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010931 gold Substances 0.000 claims abstract description 21
- 229910052737 gold Inorganic materials 0.000 claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 claims abstract 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 230000007704 transition Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000005034 decoration Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/96—Touch switches
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a hand touch control switch made of diamond and a preparation method thereof, comprising a polished bare drill fixed in a packaging shell of the switch, wherein the whole table top and partial area of the crown of the bare drill are exposed outside the packaging shell of the switch for hand touch operation, two sides of the table top and the crown of the bare drill, which are separated along the center line of the surface, are respectively provided with a thin boron-doped conductive diamond film, the surface of the boron-doped diamond film of the crown is provided with a gold electrode, the surfaces of the gold electrode and the boron-doped diamond film are provided with a chromium-plated film as a middle transition layer, and the gold electrode is connected with a power supply by a lead. The two sides of the diamond film doped with boron are conducted by touching the surface of the diamond by hands of people, so that the control of the touch switch is realized.
Description
Technical Field
The invention belongs to the technical field of vacuum microelectronics, and particularly relates to a method for controlling a circuit switch by touching the surface of a diamond by a hand.
Background
Diamonds, which are high quality single crystal diamonds, have a wide range of applications in many fields due to their superior properties, especially in the field of decoration, where diamonds are reputed by the "king of gems" and can therefore be used in many applications for decoration, and are often placed in the most central, most striking places. However, natural diamonds are scarce, expensive, lack consistency in quality and are difficult to apply in bulk. The artificial diamond prepared by the high temperature and high pressure method (HTHP method) also affects the appearance and properties of the diamond due to the metal catalyst; the Microwave Plasma Chemical Vapor Deposition (MPCVD) technology is used to grow high-quality single crystal diamonds on the surface of a specific seed crystal in batches, and the high-quality and stable-quality single crystal diamonds can be provided for the high-grade decoration field.
At present, the single crystal diamond is used for decoration, only the appearance characteristic of the diamond is used, and the invention utilizes the conductivity of the boron-doped diamond and the action of hand contact to ensure that the diamond has the switch effect on touch action and endows the decorative diamond with a new function of responding to the action.
Disclosure of Invention
The invention utilizes the characteristic that the diamond is never worn, utilizes the common diamond which is not conductive but the boron-doped diamond has conductivity, prepares a layer of boron-doped conductive diamond film on the surface of the non-conductive common diamond by utilizing the CVD technology, shields the table top and the vicinity of the center line of the crown surface of the common diamond by utilizing the shielding principle when preparing the boron-doped conductive diamond film, and then deposits a layer of thin boron-doped conductive diamond film, thus preparing a pair of conductive boron-doped diamond films on the surface of the common diamond. Because the conductive diamond film is very thin, the original luster of the diamond is not influenced optically, and meanwhile, the conductive diamond film is also a diamond component, so that the conductive diamond film also has the hardness of the diamond and has very high wear resistance. The diamond is made into a device which has the switch effect generated by the touch of human hands and has both decoration and switch functions.
Alternatively, the shape of the bare bit after cutting and grinding can be round, square or other shapes.
Alternatively, the bare drill may be sized from 0.3 carats to 5 carats, or even larger.
Alternatively, the boron-doped conductive diamond film is prepared by a CVD method, preferably an MPCVD method.
Optionally, the boron-doped conductive diamond film has a thickness between 0.1 microns and 5.0 microns. Resistivity of 1.0 x 10-3Omega cm to 280 omega cm.
Alternatively, a chromium metal film with the thickness of 20 nm to 180 nm is prepared on the surface of the conductive diamond film by sputtering coating, thermal evaporation coating, electroplating and the like, and sputtering coating is preferred.
Alternatively, a gold film with the thickness of 30 nm-280 nm is prepared on the surface of the chromium film by sputtering, thermal evaporation, electroplating and the like, and sputtering is preferred.
Optionally, the surface of the gold film is connected with one end of a lead by a welding method, and the other end of the lead is connected with the signal controller.
Drawings
Fig. 1 is a schematic structural diagram of a manual touch diamond switch.
FIG. 2 is a schematic view showing the arrangement of samples during the growth of the boron-doped diamond film in example 1.
Fig. 3 is a schematic circuit diagram of the circuit for detecting the conductive effect in embodiment 1.
Reference numerals: 1. boron-doped diamond film; 2. bare drilling; 3. a gold film; 4. a chromium film; 5, a power supply; 6. outputting a switching signal; 7. a package housing; 8. a diamond support frame; 9. plasma; 10. a tantalum wire; 11. carrying out diamond crystal support; 12. a human hand; 13. an electric bulb.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the present invention is further described in detail with reference to the following examples.
Referring to fig. 1 and 2, fig. 3 shows embodiment 1 of the present invention. The diamond film boron-doped diamond monitoring device comprises a round bare drill (2), wherein a layer of boron-doped diamond film (1) covers a table top and a crown of the bare drill, the boron-doped diamond film is divided into two symmetrical parts along the surface center line of the table top and the crown of the bare drill, a layer of chromium film (4) covers a region, close to the waist of the bare drill, of boron-doped diamond film, a layer of gold film (3) covers the surface of the chromium film, the gold film is respectively connected with a power supply (5) through leads, whether current is generated in the leads is monitored, and the monitoring of the generation and the disappearance of the current in the leads is converted into a switching signal to be output through a switching signal output device (6) to control other. The whole bare drill is fixed by a diamond support frame (8), the whole table top and part of the crown part of the bare drill are exposed out of one hole in the surface of the switch container (7), when the table top is touched by a hand (12), two boron-doped diamond films on the table top are conducted, current appears in a wire, the current appears and is detected by a switch annunciator (6), and the current is converted into corresponding 'on' or 'off' signal output to realize the control of other devices.
Example 1:
FIG. 2 is a schematic diagram showing the arrangement of a sample of a boron-doped conductive diamond film (1) on the surface of a CVD diamond (2). The bare diamond was a carat CVD diamond (2) with 57 facets, with a standard circular cut. A section of 0.6 mm diameter tantalum wire (10) is placed along the midline of the CVD diamond table and crown, and the rest of the CVD diamond table and crown is supported by diamond drags (12) while avoiding the deposition of boron-doped conductive diamond film (1) on this part of the surface. The reaction gas is excited into a plasma state by a microwave plasma technique, and then a boron-doped conductive diamond film (1) is deposited on the surface of the CVD diamond (2). There was no deposition of boron doped conductive diamond film on the CVD diamond surface under the tantalum wire because of the blanket masking of the tantalum wire. And when the thickness meets the requirement, removing the tantalum metal wire. Thus, two separate boron-doped conductive diamond films (1) are formed on the surface of the CVD diamond (2). The specific process for preparing the boron-doped conductive diamond film comprises the following steps: h2 CH4 ═ 200: 10sccm, 7.0sccm for B2H6 (boron source) (B2H 6: H2 is a diluent gas at a volume ratio of 1: 1000), microwave power: 1800W, temperature: 780 ℃, pressure: 6.5kPa, deposition time: and (3) 30 min. (sccm: standard cubic centimeters per minute). To obtainThe resulting boron-doped conductive diamond film had a thickness of 0.3 microns on the CVD diamond table and a resistivity of 3.8 × 10-1Omega cm. The thickness can ensure that the boron-doped conductive diamond film has ideal conductivity and can not cause obvious influence on the appearance of the diamond below.
Preparing a chromium film by a magnetron sputtering method, covering the surface area of the CVD diamond (2) without film plating with aluminum foil, and then performing magnetron sputtering: the target material is metal chromium, the target power is 120W, the sputtering pressure is 0.9Pa, the sputtering time is 5 minutes, and the sputtering thickness is as follows: 25 nm. The thickness can ensure that the chromium film has conductivity and has enough good adhesive strength to the gold film and the boron-doped conductive diamond film.
Preparing a gold film by a magnetron sputtering method, covering the surface area, which does not need to be coated, of the surface of the CVD diamond (2) with the chromium film plated on the surface by using an aluminum foil, and then performing magnetron sputtering: the target material is metal gold, the target power is 120W, the sputtering pressure is 1.0Pa, the sputtering time is 8 minutes, and the sputtering thickness is as follows: 45 nm. The thickness can protect the chromium film under the substrate from being oxidized, and meanwhile, the chromium film can be conveniently connected with an external lead by a welding method.
The conductive effect in the first embodiment is verified by starting the light bulb. The specific circuit diagram is shown in fig. 3.
In addition to the configuration of fig. 1, power is supplied from a power supply (5). When a human hand (12) touches the boron-doped conductive diamond film (1), current flows on the surface of the diamond, and the electric signal is captured and amplified by the control signal amplifier (6), and then the electric bulb (13) is lightened. The diamond surface touch is completed, resulting in the on action of the light bulb being lit. By the logic design of the control signal amplifier (6), when the hand leaves the surface of the CVD diamond (2), no current flows on the surface of the diamond, and the signal of current disappearance is captured and amplified by the control signal amplifier (6), and then the light bulb (13) is turned off. After the diamond surface is out of touch, the action of turning off the lamp bulb is caused to be turned off.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A hand-touch diamond control switch comprising a ground bur, said bur being housed in a switch housing, said switch housing having an aperture therein, the entire face and a portion of the crown of the bur being exposed through the aperture.
2. The switch of claim 1, wherein: the surface of the table top and the crown of the bare drill is provided with a layer of boron-doped conductive diamond film, and the other parts of the bare drill are not provided with the boron-doped conductive diamond film.
3. The switch of claim 2, wherein: the boron-doped diamond film is divided into two symmetrical parts along the center lines of the table top and the crown of the bare drill, and the boron-doped diamond film is not arranged near the center lines.
4. The switch of claim 2, wherein: and preparing a gold electrode on the surface of the boron-doped diamond film on the part, not exposed outside the hole of the packaging container, of the bare drill crown.
5. The switch of claim 4, wherein: the gold electrode covers the area of the boron-doped conductive diamond film at the crown part close to the waist part of the bare drill, and the gold electrode cannot be seen from the outside of the opening of the packaging shell.
6. The switch of claim 4, wherein: the surface of the gold electrode is a layer of gold film, a chromium film is arranged below the gold film, and a boron-doped conductive diamond film is arranged below the chromium film.
7. The switch of claim 4, wherein: the gold electrodes are respectively connected with two poles of a direct current power supply by leads.
8. The switch of claim 4, wherein: the gold electrode is positioned in the hole of the switch container.
9. A method for preparing the switch as claimed in any one of claims 1-8, wherein a ground diamond is masked at the center line of the diamond table and crown by masking, then a layer of boron-doped conductive diamond film is deposited on the surfaces of the diamond table and crown by CVD method, then a chromium film and a gold film are respectively prepared on the surface of the boron-doped conductive diamond film near the waist line of the diamond by sputtering method by masking, finally the gold film is connected with a lead by welding method and then connected with a DC power supply and a signal controller to form a diamond switch which can be controlled by touch, when in use, a human hand touches the diamond table to conduct the two conductive diamond films, and the electric signal of current conduction drives other electric appliances to act by a special signal amplifier, and functions as a switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010090331.4A CN111441033A (en) | 2020-02-13 | 2020-02-13 | Hand-touch control switch made of diamonds and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010090331.4A CN111441033A (en) | 2020-02-13 | 2020-02-13 | Hand-touch control switch made of diamonds and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN111441033A true CN111441033A (en) | 2020-07-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010090331.4A Pending CN111441033A (en) | 2020-02-13 | 2020-02-13 | Hand-touch control switch made of diamonds and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080203397A1 (en) * | 2004-09-10 | 2008-08-28 | Gehan Anil Joseph Amaratunga | Switching Device |
| WO2017038690A1 (en) * | 2015-08-28 | 2017-03-09 | 国立研究開発法人物質・材料研究機構 | Diamond anvil cell |
| CN107142462A (en) * | 2017-04-11 | 2017-09-08 | 山东省科学院海洋仪器仪表研究所 | A kind of Buddha's warrior attendant ground mass seawater salinity sensor electrode material |
| CN212152432U (en) * | 2020-02-13 | 2020-12-15 | 上海征世科技有限公司 | Hand touch control switch made of diamonds |
-
2020
- 2020-02-13 CN CN202010090331.4A patent/CN111441033A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080203397A1 (en) * | 2004-09-10 | 2008-08-28 | Gehan Anil Joseph Amaratunga | Switching Device |
| WO2017038690A1 (en) * | 2015-08-28 | 2017-03-09 | 国立研究開発法人物質・材料研究機構 | Diamond anvil cell |
| CN107142462A (en) * | 2017-04-11 | 2017-09-08 | 山东省科学院海洋仪器仪表研究所 | A kind of Buddha's warrior attendant ground mass seawater salinity sensor electrode material |
| CN212152432U (en) * | 2020-02-13 | 2020-12-15 | 上海征世科技有限公司 | Hand touch control switch made of diamonds |
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