CN111435647B - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
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Abstract
得到能够防止不良状况、降低制造成本、扩大工艺的条件范围的半导体装置的制造方法。在绝缘层(1)之上相互分离地形成第1电极(2)和第2电极(3)。在金属端子(4)的超声波接合部(5)的外周部形成阻挡壁(6),该阻挡壁由与金属端子(4)相同的材料构成。使用超声波工具(9)对金属端子(4)的超声波接合部(5)施加压力和超声波振动,由此将金属端子(4)与第1电极(2)超声波接合。
Description
技术领域
本发明涉及半导体装置的制造方法。
背景技术
在将金属端子与电极进行超声波接合时,使用超声波工具对金属端子施加压力和超声波振动。提出有在金属端子的超声波接合部设置了线性膨胀系数与金属端子不同的材料的技术(例如,参照专利文献1),但是存在制造成本增加的问题。
专利文献1:日本特开2016-134547号公报
在超声波接合中,在金属端子由于超声波振动和压力而发生加工变形的过程中产生金属屑。有时该金属屑与相邻的电极发生短路而产生不良状况。因此,在工艺完成后必须追加将金属屑去除的作业。另外,为了抑制金属屑的产生,必须研究超声波工具的形状或者工艺条件等。因此,存在制造成本增加、工艺的条件范围变窄的问题。
发明内容
本发明是为了解决上述课题而提出的,其目的在于得到一种能够防止不良状况、降低制造成本、扩大工艺的条件范围的半导体装置的制造方法。
本发明涉及的半导体装置的制造方法的特征在于,具有以下工序:在绝缘层之上相互分离地形成第1电极和第2电极;在金属端子的超声波接合部的外周部形成阻挡壁,该阻挡壁由与所述金属端子相同的材料构成;以及使用超声波工具对所述金属端子的所述超声波接合部施加压力和超声波振动,由此将所述金属端子与所述第1电极超声波接合。
发明的效果
在本发明中,在金属端子的超声波接合部的外周部形成阻挡壁。该阻挡壁拦截在超声波接合中产生的金属屑。因此,能够防止金属屑与相邻的第2电极发生短路而产生不良状况。与此相伴,能够减小第1电极和第2电极的距离,所以实现了半导体装置的小型化。另外,由于不需要对超声波工具的形状或者工艺条件等进行研究,所以能够扩大工艺的条件范围。另外,在工艺完成后不需要将金属屑去除的作业。而且,由于阻挡壁的材料与金属端子相同,所以制造容易。因此,能够降低制造成本。
附图说明
图1表示实施方式1涉及的半导体装置的制造方法的斜视图。
图2是沿着图1的I-II的剖面图。
图3是表示实施方式1涉及的金属端子的斜视图。
图4是沿着图1的III-IV的剖面图。
图5是表示通过对比例涉及的半导体装置的制造方法进行超声波接合的情况的剖面图。
图6是表示通过对比例涉及的半导体装置的制造方法进行超声波接合的情况的剖面图。
图7是表示通过实施方式1涉及的半导体装置的制造方法对金属端子进行了超声波接合的状态的剖面图。
图8是表示实施方式1涉及的金属端子的变形例的斜视图。
图9是表示将超声波工具按压于实施方式1涉及的金属端子的变形例后的状态的剖面图。
图10是表示通过实施方式1涉及的半导体装置的制造方法的变形例进行了超声波接合的状态的剖面图。
图11是表示实施方式2涉及的金属端子的斜视图。
图12是表示将超声波工具按压于实施方式2涉及的金属端子后的状态的剖面图。
图13是表示通过实施方式2涉及的半导体装置的制造方法进行了超声波接合的状态的剖面图。
图14是表示实施方式2涉及的金属端子的变形例的斜视图。
图15是表示将超声波工具按压于实施方式2涉及的金属端子的变形例后的状态的剖面图。
图16是表示通过实施方式2涉及的半导体装置的制造方法的变形例进行了超声波接合的状态的剖面图。
图17是表示实施方式3涉及的金属端子的斜视图。
图18是表示将超声波工具按压于实施方式3涉及的金属端子后的状态的剖面图。
图19是表示通过实施方式3涉及的半导体装置的制造方法进行了超声波接合的状态的剖面图。
图20是表示实施方式3涉及的金属端子的变形例的斜视图。
图21是表示将超声波工具按压于实施方式3涉及的金属端子的变形例后的状态的剖面图。
图22是表示通过实施方式3涉及的半导体装置的制造方法的变形例进行了超声波接合的状态的剖面图。
标号的说明
1绝缘层,2第1电极,3第2电极,4金属端子,5超声波接合部,6阻挡壁,7前端部,8主体部,9超声波工具,11凹部。
具体实施方式
参照附图对实施方式涉及的半导体装置的制造方法进行说明。对于相同或者对应的结构要素标注相同的标号,有时省略重复说明。
实施方式1.
图1是表示实施方式1涉及的半导体装置的制造方法的斜视图。
图2是沿着图1的I-II的剖面图。图3是表示实施方式1涉及的金属端子的斜视图。图4是沿着图1的III-IV的剖面图。
首先,在绝缘层1之上相互分离地形成第1电极2和第2电极3。
这里,绝缘层1是半导体装置的绝缘基板等,对第1电极2和第2电极3进行绝缘。就完成后的半导体装置而言,由于在第1电极2和第2电极3分别独立地流过电流,所以需要使第1电极2和第2电极3相互电绝缘。
另外,在金属端子4的超声波接合部5的外周部,通过例如冲压加工等形成阻挡壁6,该阻挡壁6由与金属端子4相同的材料构成。金属端子4具有包含超声波接合部5的前端部7和相对于前端部7向上方弯折的主体部8。阻挡壁6在超声波接合部5的外周部形成于除了主体部8侧之外的3个方向。另外,阻挡壁6的内侧面与金属端子4的上表面垂直。
接着,使超声波工具9的前端与超声波接合部5的上表面接触,使用超声波工具9对金属端子4的超声波接合部5施加压力和超声波振动。由此,将金属端子4与第1电极2超声波接合。超声波振动的方向可以是一个方向也可以是两个方向。超声波接合部5需要比超声波工具9的前端大,以使得超声波工具9和阻挡壁6不发生干扰。
接着,与对比例进行对比来说明本实施方式的效果。图5以及图6是表示通过对比例涉及的半导体装置的制造方法进行超声波接合的情况的剖面图。如图5所示,如果使用超声波工具9对金属端子4的超声波接合部5施加压力和超声波振动,则产生金属屑10。在对比例中,没有形成拦截金属屑10的阻挡壁6。因此,如图6所示,金属屑10在横向上前进,与相邻的第2电极3发生短路而产生不良状况。
图7是表示通过实施方式1涉及的半导体装置的制造方法对金属端子进行了超声波接合的状态的剖面图。在本实施方式中,在金属端子4的超声波接合部5的外周部形成阻挡壁6。该阻挡壁6拦截在超声波接合中产生的金属屑10,金属屑10向垂直方向生长。因此,能够防止金属屑10与相邻的第2电极3发生短路而产生不良状况。与此相伴,能够减小第1电极2和第2电极3的距离,所以实现了半导体装置的小型化。
另外,由于不需要对超声波工具9的形状或者工艺条件等进行研究,所以能够扩大工艺的条件范围。另外,在工艺完成后不需要将金属屑10去除的作业。而且,由于阻挡壁6的材料与金属端子4相同,所以制造容易。因此,能够降低制造成本。
另外,从超声波接合部5朝向金属端子4的主体部8的金属屑10被主体部8拦截。因此,在超声波接合部5的外周部,在主体部8侧不设置阻挡壁6。由此,能够削减材料费。
另外,金属端子4在前端部7和主体部8之间弯折,在该弯折部,金属端子4的下表面成为倾斜部。另一方面,直至金属端子4的最前端为止,金属端子4的前端部7的下表面是平面。由此,金属端子4与第1电极2的接触面积变大,因此,能够提高接合强度。
图8是表示实施方式1涉及的金属端子的变形例的斜视图。图9是表示将超声波工具按压于实施方式1涉及的金属端子的变形例后的状态的剖面图。图10是表示通过实施方式1涉及的半导体装置的制造方法的变形例进行了超声波接合的状态的剖面图。在超声波接合部5的外周部,仅在第2电极3侧形成阻挡壁6。这样,通过将阻挡壁6的数量设定为必要的最低限度,能够削减材料费。其他结构以及效果与实施方式2相同。此外,在相对于金属端子4而在2个方向设置有第2电极3的情况下,在超声波接合部5的外周部,仅在上述第2电极3侧的2个边形成阻挡壁6。
实施方式2.
图11是表示实施方式2涉及的金属端子的斜视图。图12是表示将超声波工具按压于实施方式2涉及的金属端子后的状态的剖面图。图13是表示通过实施方式2涉及的半导体装置的制造方法对金属端子进行了超声波接合的状态的剖面图。
在本实施方式中,阻挡壁6的内侧面是锥形的。由此,产生的金属屑10相对于第2电极3向斜上方前进,因此,能够防止金属屑10与相邻的第2电极3发生短路。另外,不限于阻挡壁6的内侧面垂直的情况,由此,形成阻挡壁6的方法的选项增加。
图14是表示实施方式2涉及的金属端子的变形例的斜视图。图15是表示将超声波工具按压于实施方式2涉及的金属端子的变形例后的状态的剖面图。图16是表示通过实施方式2涉及的半导体装置的制造方法的变形例进行了超声波接合的状态的剖面图。在超声波接合部5的外周部,仅在第2电极3侧形成阻挡壁6。这样,通过将阻挡壁6的数量设定为必要的最低限度,能够削减材料费。其他结构以及效果与实施方式2相同。此外,在相对于金属端子4而在2个方向设置有第2电极3的情况下,在超声波接合部5的外周部,仅在上述第2电极3侧的2个边形成阻挡壁6。
实施方式3.
图17是表示实施方式3涉及的金属端子的斜视图。图18是表示将超声波工具按压于实施方式3涉及的金属端子后的状态的剖面图。图19是表示通过实施方式3涉及的半导体装置的制造方法对金属端子进行了超声波接合的状态的剖面图。
在本实施方式中,在阻挡壁6的内侧面的下侧设置凹部11,内侧面为“コ”字型。由此,产生的金属屑10沿着阻挡壁6的内侧面的凹部11的内壁前进,返回至超声波接合部5的方向。因此,能够防止金属屑10与相邻的第2电极3发生短路。其他结构以及效果与实施方式1相同。
图20是表示实施方式3涉及的金属端子的变形例的斜视图。图21是表示将超声波工具按压于实施方式3涉及的金属端子的变形例后的状态的剖面图。图22是表示通过实施方式3涉及的半导体装置的制造方法的变形例进行了超声波接合的状态的剖面图。在超声波接合部5的外周部,仅在第2电极3侧形成阻挡壁6。这样,通过将阻挡壁6的数量设定为必要的最低限度,能够削减材料费。其他结构以及效果与实施方式3相同。此外,在相对于金属端子4而在2个方向设置有第2电极3的情况下,在超声波接合部5的外周部,仅在上述第2电极3侧的2个边形成阻挡壁6。
Claims (5)
1.一种半导体装置的制造方法,其特征在于,具有以下工序:
在绝缘层之上相互分离地形成第1电极和第2电极;
在金属端子的超声波接合部的外周部形成阻挡壁,该阻挡壁由与所述金属端子相同的材料构成;以及
使用超声波工具对所述金属端子的所述超声波接合部施加压力和超声波振动,由此将所述金属端子与所述第1电极超声波接合,
在所述阻挡壁的内侧面的下侧设置有凹部。
2.一种半导体装置的制造方法,其特征在于,具有以下工序:
在绝缘层之上相互分离地形成第1电极和第2电极;
在金属端子的超声波接合部的外周部形成阻挡壁,该阻挡壁由与所述金属端子相同的材料构成;以及
使用超声波工具对所述金属端子的所述超声波接合部施加压力和超声波振动,由此将所述金属端子与所述第1电极超声波接合,
在所述超声波接合部的所述外周部,仅在所述第2电极侧形成所述阻挡壁。
3.根据权利要求2任一项所述的半导体装置的制造方法,其特征在于,
所述阻挡壁的内侧面是锥形的。
4.根据权利要求1至3中任一项所述的半导体装置的制造方法,其特征在于,
所述金属端子具有包含所述超声波接合部的前端部和相对于所述前端部向上方弯折的主体部,
在所述超声波接合部的所述外周部,在所述主体部侧不形成所述阻挡壁。
5.根据权利要求4所述的半导体装置的制造方法,其特征在于,
所述金属端子的所述前端部的下表面是平面。
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