CN111434640A - 复相荧光陶瓷及其制备方法 - Google Patents
复相荧光陶瓷及其制备方法 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052596 spinel Inorganic materials 0.000 claims abstract description 53
- 239000011029 spinel Substances 0.000 claims abstract description 53
- 239000011159 matrix material Substances 0.000 claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 31
- 239000000843 powder Substances 0.000 claims description 55
- 235000015895 biscuits Nutrition 0.000 claims description 35
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 27
- 239000011777 magnesium Substances 0.000 claims description 23
- 229910052749 magnesium Inorganic materials 0.000 claims description 23
- 239000000395 magnesium oxide Substances 0.000 claims description 22
- 238000005245 sintering Methods 0.000 claims description 22
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 20
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 18
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- MFUVDXOKPBAHMC-UHFFFAOYSA-N magnesium;dinitrate;hexahydrate Chemical compound O.O.O.O.O.O.[Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MFUVDXOKPBAHMC-UHFFFAOYSA-N 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
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- 230000002349 favourable effect Effects 0.000 abstract 1
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- 239000000203 mixture Substances 0.000 description 17
- -1 magnesium aluminate Chemical class 0.000 description 13
- 238000007599 discharging Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000003292 glue Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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Abstract
本申请公开一种复相荧光陶瓷及其制备方法。本申请通过在包括氧化铝基体和荧光颗粒的复相荧光陶瓷中设置尖晶石,该尖晶石分布于氧化铝晶界之间,能够对照射入复相荧光陶瓷中的激发光进行散射,从而有利于进一步提高复相荧光陶瓷的发光效率。
Description
技术领域
本申请涉及固态照明技术领域,具体涉及一种复相荧光陶瓷及其制备方法。
背景技术
目前,激光照明显示技术主要通过蓝色激光激发荧光材料来获取其他波段的荧光。随着激光照明显示技术的不断发展,对荧光材料的性能要求也不断提高,例如,荧光材料需要有较高的光转换效率、发光亮度高以及较高导热性以承载更高功率密度的蓝色激光等。
用于激光照明显示技术中的荧光材料大致可以分为三类:一类是,通过有机硅胶/有机树脂等有机聚合物对荧光粉进行封装所形成的荧光材料。随着蓝色激光功率的增加,有机基体所封装的荧光粉在进行光转换过程中所产生热量急剧增加,致使荧光材料自身的温度大幅上升,导致有机基体老化泛黄,从而引发光效损失、寿命减少等问题。二类是,荧光玻璃。其主要是将荧光粉封装在SiO2基/硼硅酸盐基的无机玻璃中。相比较于有机树脂,荧光玻璃在耐热性、高热稳定性、低色偏等性能上有很大改善,但是其在导热性能上较有机树脂并无显著性的提高。三类是,荧光陶瓷。相比较于有机基体和无机玻璃基体封装形成的荧光材料,荧光陶瓷无论是在耐热还是热导率上均有显著的优势。
但是,荧光陶瓷在受到激发时,其发光中心相对较少,导致发光效率较差。对于荧光陶瓷而言,如何进一步提高其发光效率仍是业界孜孜不倦的追求。
发明内容
有于此,本申请有必要提供一种复相荧光陶瓷及其制备方法,以有利于进一步提高其发光效率。
本申请保护一种复相荧光陶瓷,所述复相荧光陶瓷包括氧化铝基体、以及分布于所述氧化铝基体中的荧光颗粒和铝镁尖晶石,所述铝镁尖晶石分布于所述氧化铝基体中的氧化铝晶界之间。
可选的,所述尖晶石为颗粒状和/或柱状结构,优选颗粒状的所述尖晶石的晶粒尺寸为0.2~2um,柱状结构的所述尖晶石的截面尺寸为0.5~2um、长度为2~10um。
可选的,所述铝镁尖晶石在所述复相荧光陶瓷中的质量占比为0.5%~5%。
可选的,所述荧光颗粒占总体质量的38%~65%。
可选的,所述荧光颗粒的直径为2~30um,所述氧化铝的晶粒尺寸为1~10um。
可选的,将氧化铝、含镁化合物、荧光颗粒的粉体配比后混合,并压制成块体素坯;
将所述块体素坯进行烧结,所述含镁化合物与氧化铝反应形成铝镁尖晶石,从而形成包括氧化铝基体、以及分布于所述氧化铝基体中的荧光颗粒和铝镁尖晶石的复相荧光陶瓷。
可选的,所述含镁化合物和氧化铝粉体的直径为0.05~0.8um。
可选的,所述含镁化合物为氧化镁或六水合硝酸镁。
可选的,在混合粉体时还混合有粘接剂,将所述块体素坯进行烧结之前,先进行排胶工艺,将所述粘接剂分解排除。
可选的,在对排胶后的块体素坯进行烧结之前,将排胶后的块体素坯进行冷等静压处理。
可选的,将混合后的粉体先煅烧,使得含镁化合物分解成氧化镁,然后将煅烧后的成分研磨过筛后得到的粉体压制成块体素坯。
可选的,所述荧光颗粒占粉体总体质量的38%~65%,所述铝镁尖晶石在所制得的复相荧光陶瓷中质量占比为0.5%~5%。
本申请提供的复相荧光陶瓷及其制备方法,通过在包括氧化铝基体和荧光颗粒的复相荧光陶瓷中设置尖晶石,该尖晶石分布于氧化铝晶界之间且其折射率低于氧化铝基体的折射率,能够对照射入复相荧光陶瓷中的激发光进行散射,从而有利于进一步提高复相荧光陶瓷的发光效率。
附图说明
图1是复相荧光陶瓷的双折射示意图;
图2是本申请的复相荧光陶瓷一实施例的结构俯视图;
图3是图2所示的复相荧光陶瓷沿A-A方向的结构剖视图;
图4是本申请复相荧光陶瓷的制备方法第一实施例的流程示意图;
图5是本申请复相荧光陶瓷的制备方法第二实施例的流程示意图;
图6是本申请复相荧光陶瓷的制备方法第三实施例的流程示意图;
图7是本申请复相荧光陶瓷的制备方法第四实施例的流程示意图。
具体实施方式
本申请的首要目的是:在包括氧化铝基体和荧光颗粒的复相荧光陶瓷中设置尖晶石,该尖晶石分布于氧化铝晶界之间,且其折射率低于氧化铝基体的折射率,通过尖晶石对照射入复相荧光陶瓷中的激发光进行散射,以此有利于进一步提高复相荧光陶瓷的发光效率。
基于上述目的,下面将结合本申请实施例的附图,对本申请实施例中的技术方案进行清楚、完整地描述。可以理解的是,此处描述的具体实施例仅用于解释本申请,而非对本申请的限定。在不冲突的情况下,下述各实施例及其中的技术特征可相互组合。另外还需要说明的是,为了便于描述,所述附图中仅示出了与本申请相关的部分而非全部结构。基于本申请的实施例,本领域普通技术人员在没有作出创造性劳动前提下获得的所有其他实施例,都属于本申请保护的范围。
图2是本申请的复相荧光陶瓷一实施例的结构俯视图,图3是图2所示的复相荧光陶瓷沿A-A方向的结构剖视图。请结合图2和图3所示,所述复相荧光陶瓷10包括氧化铝基体11、以及分布于该氧化铝基体11中的荧光颗粒12和尖晶石13。
氧化铝基体11由晶粒细小的氧化铝(Al2O3)形成,氧化铝晶粒大小可以为1~10um,致密且晶粒细小的氧化铝基体11透光性良好。
荧光粉颗粒12的尺寸大于氧化铝晶粒的尺寸,该荧光粉颗粒12的直径D50约为2~30um,较大的荧光粉颗粒12均匀分布于氧化铝基体11中并被氧化铝基体11的晶粒连续包围。荧光粉颗粒12能够吸收激发光,例如可以受到蓝光的激发而发出黄色的可见光,被激发的可见光穿过氧化铝基体11出射到复相荧光陶瓷10的外面。
尖晶石13的尺寸最小,其可以为颗粒状,例如其尺寸优选为0.2~2um,也可以为柱状结构,例如优选其截面尺寸为0.5~2um、长度为2~10um。所述尖晶石13在复相荧光陶瓷10中的质量占比可以为0.5%~5%。其中,尖晶石13可以通过氧化铝和含镁氧化物(例如氧化镁)烧结反应生成,氧化铝和含镁氧化物一般都以纳米颗粒的形貌加入,颗粒尺寸为0.05~0.8um,烧结之后它们形成1~5um大小的镁铝尖晶石颗粒。在烧结过程中,氧化镁会固溶到氧化铝的晶格中,氧化镁的添加量(即质量占比)一般高于氧化铝晶格的固溶极限,即,本申请添加过量氧化镁,于此同时增加烧结时的保温时间,在此条件下,氧化铝和氧化镁生成镁铝尖晶石相,并分布于氧化铝晶界中,所生成的第二相(即镁铝尖晶石相)可对氧化铝晶粒长大起到极大的抑制作用,故而使得本申请所制备的荧光陶瓷中氧化铝晶粒的尺寸较小,利于氧化铝晶粒分布均匀。
尺寸较小的尖晶石13分布于氧化铝基体11中的氧化铝晶界之间,且其折射率低于所述氧化铝基体11的折射率。
复相荧光陶瓷中,作为基体的陶瓷具有第一相,封装的荧光粉具有第二相,第二相荧光粉均匀分布在连续介质氧化铝相中,由于氧化铝属于三方晶系,其存在双折射现象,如图1所示,激发光在荧光陶瓷中会因双折射而发生散射,荧光陶瓷中被散射的激发光进而可以激发其附近更多的荧光粉,其表现为发光效率更高。因此,复相荧光陶瓷更具优异性。
在本申请中,进一步引入尖晶石13,尖晶石13的首要作用是作为散射粒子,对入射到所述复相荧光陶瓷10内部的激发光、以及复相荧光陶瓷10内部受激发光激发而发出的可见光都起到散射作用,以此增加复相荧光陶瓷10内部的光程,从发光中心开始传播的光线不易通过复相荧光陶瓷10内的介质横向逃逸,这些光会被限制在一个比较小的区域之内并在不同相介质之间反复折射、散射,最终会有更多的光从复相荧光陶瓷10的表面逃逸而出,以此增强正面出光效果,即有利于进一步提高复相荧光陶瓷10的发光效率。也就是说,本申请相当于在现有的复相荧光陶瓷中添加了尖晶石13做散射相,以进一步提高复相荧光陶瓷的发光效率。
另外,所述尖晶石13分布于氧化铝基体11中的氧化铝晶界之间,还可以有利于提高复相荧光陶瓷10的致密性。
作为散射粒子的尖晶石13优选为铝镁尖晶石,其可以是烧结过程中氧化铝和含镁化合物进行化合作用之后的产物,镁铝尖晶石的性质稳定,分布也很均匀,能够起到很好的散射作用。
为了获得上述复相荧光陶瓷,本申请还保护一种制备复相荧光陶瓷10的方法,如图4所示,包括以下步骤:
S41:将氧化铝、含镁化合物、荧光颗粒的粉体配比后混合,并压制成块体素坯。
S42:将所述块体素坯进行烧结,所述含镁化合物与氧化铝反应形成铝镁尖晶石,从而形成包括氧化铝基体、以及分布于所述氧化铝基体中的荧光颗粒和铝镁尖晶石的复相荧光陶瓷。
对于不同的含镁化合物,本申请的制备方法有所区别,例如,氧化铝、含镁化合物和荧光颗粒在混合物中的占比会有所区别,压制所需的压强、真空烧结所需的温度及时间、热退火处理的温度及时间也会有所区别。下面以尖晶石13为铝镁尖晶石为例,并结合图5~图7所示的方法描述本申请复相荧光陶瓷10的制备原理及过程。
实施例1
请参阅图5,所述复相荧光陶瓷10的制备方法包括如下步骤:
S51:对氧化铝和氧化镁混合物进行第一阶段球磨。
本实施例的含镁化合物为氧化镁粉末。
首先,选取高纯度纳米级别的氧化铝粉末和氧化镁粉末,二者纯度优选均在99%以上,氧化镁占粉体总质量的2wt%。然后,将二者同少量的无水乙醇一同倒入球磨罐中,其中无水乙醇作为分散剂以有助于氧化铝粉末和氧化镁粉末在球磨的过程中均匀混合。所述第一阶段球磨选用氧化铝球进行球磨混料,且球磨时间优选为24h。
S52:将荧光粉加入经第一阶段球磨的混合物并进行第二阶段球磨。
称取一定量的荧光粉,例如Ce:YAG或Ce:LuAG荧光粉,其占总粉体质量的50%,并添加一定量的PVB(聚乙烯醇缩丁醛)乙醇溶液,其中PVB乙醇溶液作为分散剂。在球磨1h之后,将混合物在70℃下进行真空干燥,然后再随即进行研磨、过筛处理,而后装粉待用。
S53:将经过第二阶段球磨的混合物进行压制以制成块体素坯。
将混合物粉体在80MPa压力下压制成块体素坯。
S54:对所述块体素坯进行排胶工艺,将所述粘接剂分解排除。
S55:将排胶后的块体素坯进行冷等静压处理。
将成型的块体素坯(即荧光陶瓷素坯)在马弗炉中排胶处理,以排出其中作为粘接剂的有机物乙醇,该排胶工艺为500℃保温2h以及900℃保温4h。
在排胶结束之后,将荧光陶瓷素坯在200MPa压力下进行冷却静压处理,以提高荧光陶瓷素坯的致密度。
S56:将所述块体素坯进行烧结,所述氧化镁与氧化铝反应形成铝镁尖晶石,从而形成包括氧化铝基体、以及分布于所述氧化铝基体中的荧光颗粒和铝镁尖晶石的复相荧光陶瓷。
将荧光陶瓷素坯置于真空炉中,真空度为10-3Pa,1700℃下烧结4h。待真空烧结后,将荧光陶瓷素坯在空气气氛下,1300℃退火处理10h。即可形成一定厚度且表面粗糙的复相荧光陶瓷。
本申请进一步对复相荧光陶瓷进行减薄处理,例如使其厚度为100um以下,再进行抛光处理,最后得到可用的复相荧光陶瓷。
实施例2
请参阅图6,所述复相荧光陶瓷10的制备方法包括如下步骤:
S61:对氧化铝和六合硝酸镁混合物进行第一阶段球磨。
本实施例的含镁化合物为六合硝酸镁。
选取高纯度纳米级别的氧化铝粉末和六合硝酸镁,二者纯度优选均在99%以上,六合硝酸镁占粉体总质量的10wt%。然后,将二者同少量的无水乙醇一同倒入球磨罐中,其中无水乙醇作为分散剂以有助于氧化铝粉末和六合硝酸镁在球磨的过程中均匀混合。所述第一阶段球磨选用氧化铝球进行球磨混料,且球磨时间优选为24h。
S62:将荧光粉加入经第一阶段球磨的混合物并进行第二阶段球磨。
称取一定量的荧光粉,例如Ce:YAG或Ce:LuAG荧光粉,其占总粉体质量的40%,并添加一定量的PVB乙醇溶液,其中PVB乙醇溶液作为分散剂。在球磨0.5h之后,将混合物在70℃下进行真空干燥,然后再随即进行研磨、过筛处理,而后装粉待用。
S63:将经过第二阶段球磨的混合物进行压制以制成块体素坯。
将混合物粉体在80MPa压力下压制成块体素坯。
S64:对所述块体素坯进行排胶工艺,将所述粘接剂分解排除。
S65:将排胶后的块体素坯进行冷等静压处理。
将成型的块体(即荧光陶瓷素坯)在马弗炉中排胶处理,排出其中的有机物乙醇,该排胶工艺为500℃保温2h以及1000℃保温6h。
在排胶结束之后,将荧光陶瓷素坯在200MPa压力下进行冷却静压处理,以提高荧光陶瓷素坯的致密度。
S66:将所述块体素坯进行烧结,所述六合硝酸镁分解成氧化镁,氧化镁与氧化铝反应形成铝镁尖晶石,从而形成包括氧化铝基体、以及分布于所述氧化铝基体中的荧光颗粒和铝镁尖晶石的复相荧光陶瓷。
将荧光陶瓷素坯置于真空炉中,真空度为10-3Pa,1730℃下烧结4h。待真空烧结后,将荧光陶瓷素坯在空气气氛下,1350℃退火处理10h。即可形成一定厚度且表面粗糙的复相荧光陶瓷。
本申请进一步对复相荧光陶瓷进行减薄处理,例如使其厚度为100um以下,再进行抛光处理,最后得到可用的复相荧光陶瓷。
实施例3
请参阅图7,所述复相荧光陶瓷10的制备方法包括如下步骤:
S71:对氧化铝和六合硝酸镁混合物进行第一阶段球磨。
本实施例的含镁化合物为六合硝酸镁。
选取高纯度纳米级别的氧化铝粉末和六合硝酸镁,二者纯度优选均在99%以上,六合硝酸镁占粉体总质量的8wt%。然后,将二者同少量的无水乙醇一同倒入球磨罐中,其中无水乙醇作为分散剂以有助于氧化铝粉末和六合硝酸镁在球磨的过程中均匀混合。所述第一阶段球磨选用氧化铝球进行球磨混料,且球磨时间优选为24h。
S72:将荧光粉加入经第一阶段球磨的混合物并进行第二阶段球磨。
称取一定量的荧光粉,例如Ce:YAG或Ce:LuAG荧光粉,其占总粉体质量的60%。在球磨0.5h之后,将混合物在70℃下进行真空干燥,然后再随即进行研磨、过筛处理,而后装粉待用。
S73:将经过第二阶段球磨的混合物进行煅烧以将所述六水合硝酸镁分解为氧化镁。
将过筛后的粉体在马弗炉中500~700℃之间进行煅烧2~5h以去除粉体中有机成分,将六合硝酸镁分解成氧化镁。煅烧后将粉体研磨进行过200目筛,得到流动性较好的粉体,而后装粉待用。
S74:将经过煅烧的混合物进行预压处理。
将混合物粉体充填到石墨模具中,在5~20MPa压强下进行预压处理。
S75:将所述块体素坯进行烧结,所述氧化镁与氧化铝反应形成铝镁尖晶石,从而形成包括氧化铝基体、以及分布于所述氧化铝基体中的荧光颗粒和铝镁尖晶石的复相荧光陶瓷。
将石墨模具置于SPS(Spark Plasma Sintering,放电等离子烧结)热压炉中,在真空/氩气气氛中,1300℃~1600℃下保温烧结0.5h~4h,烧结时压力在20~180MPa。待热压烧结后,将荧光陶瓷素坯在空气气氛下,1300℃退火处理10h,即可形成一定厚度且表面粗糙的复相荧光陶瓷。
本申请进一步对复相荧光陶瓷进行减薄处理,例如使其厚度为100um以下,再进行抛光处理,最后得到可用的复相荧光陶瓷。
上述复相荧光陶瓷10可作为各种类型的显示面板的发光件,该显示面板包括但不限于为OLED(Organic Light-Emitting Diode,有机发光二极管)显示面板、或者柔性触控显示面板。并且,所述显示面板可适用于包括但不限于智能手机、PDA(PersonalDigitalAssistant,个人数字助理或平板电脑)等移动终端,以及佩戴于肢体或者嵌入于衣物、首饰、配件中的可穿戴设备。
应理解,本申请中的术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。本申请实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部元件之间的相对位置关系、运动情况等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。
再次说明,以上所述仅为本申请的实施例,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,例如各实施例之间技术特征的相互结合,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。
Claims (12)
1.一种复相荧光陶瓷,其特征在于,所述复相荧光陶瓷包括氧化铝基体、以及分布于所述氧化铝基体中的荧光颗粒和尖晶石,所述尖晶石分布于所述氧化铝基体中的氧化铝晶界之间。
2.根据权利要求1所述的复相荧光陶瓷,其特征在于,所述尖晶石为颗粒状和/或柱状结构,优选颗粒状的所述尖晶石的晶粒尺寸为0.2~2um,柱状结构的所述尖晶石的截面尺寸为0.5~2um、长度为2~10um。
3.根据权利要求1所述的复相荧光陶瓷,其特征在于,所述尖晶石在所述复相荧光陶瓷中的质量占比为0.5%~5%。
4.根据权利要求3所述的复相荧光陶瓷,其特征在于,所述荧光颗粒占总体质量的38%~65%。
5.根据权利要求3所述的复相荧光陶瓷,其特征在于,所述荧光颗粒的直径为2~30um,所述氧化铝的晶粒尺寸为1~10um。
6.一种复相荧光陶瓷的制备方法,其特征在于,所述制备方法包括:
将氧化铝、含镁化合物、荧光颗粒的粉体配比后混合,并压制成块体素坯;
将所述块体素坯进行烧结,所述含镁化合物与氧化铝反应形成铝镁尖晶石,从而形成包括氧化铝基体、以及分布于所述氧化铝基体中的荧光颗粒和铝镁尖晶石的复相荧光陶瓷。
7.根据权利要求6所述的制备方法,其特征在于,所述含镁化合物和氧化铝粉体的直径为0.05~0.8um。
8.根据权利要求6所述的制备方法,其特征在于,所述含镁化合物为氧化镁或六水合硝酸镁。
9.根据权利要求6所述的制备方法,其特征在于,在混合粉体时还混合有粘接剂,将所述块体素坯进行烧结之前,先进行排胶工艺,将所述粘接剂分解排除。
10.根据权利要求9所述的制备方法,其特征在于,在对排胶后的块体素坯进行烧结之前,将排胶后的块体素坯进行冷等静压处理。
11.根据权利要求6所述的制备方法,其特征在于,将混合后的粉体先煅烧,使得含镁化合物分解成氧化镁,然后将煅烧后的成分研磨过筛后得到的粉体压制成块体素坯。
12.根据权利要求6所述的制备方法,其特征在于,所述荧光颗粒占粉体总体质量的38%~65%,所述铝镁尖晶石在所制得的复相荧光陶瓷中质量占比为0.5%~5%。
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