CN111430574A - Organic light-emitting device, preparation method thereof and display panel - Google Patents
Organic light-emitting device, preparation method thereof and display panel Download PDFInfo
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- CN111430574A CN111430574A CN202010355464.XA CN202010355464A CN111430574A CN 111430574 A CN111430574 A CN 111430574A CN 202010355464 A CN202010355464 A CN 202010355464A CN 111430574 A CN111430574 A CN 111430574A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The application discloses an organic light-emitting device, a preparation method thereof and a display panel, wherein the organic light-emitting device comprises a first electrode; the light emitting structure layer is arranged on the first electrode; the second electrode is arranged on the light-emitting structure layer; the first electrode or the second electrode has a photonic crystal structure; or the photonic crystal layer is arranged on one side of the first electrode far away from the second electrode or on one side of the second electrode far away from the first electrode. The optical characteristics of the photonic crystal structure layer can be regulated and controlled by regulating and controlling the material, the particle size, the thickness and the like of the photonic crystal structure layer, so that the photonic crystal structure has different structural parameters or materials corresponding to different color display areas of pixels, light of corresponding wave bands is ensured to be selectively reflected in red, green and blue display areas respectively, the luminous light emitting efficiency of the corresponding color areas can be improved, and the reflection of ambient white light and other stray light is reduced.
Description
Technical Field
The application relates to the technical field of display panels, in particular to an organic light-emitting device, a preparation method of the organic light-emitting device and a display panel.
Background
The existing Organic light Emitting Diode (O L ED) structure has the advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, extremely high reaction rate, etc., and has become one of the current mainstream display technologies.
In order to improve the light extraction efficiency of the O L ED display, a metal (e.g., Ag, Pt, Al, Ti, etc.) with strong reflectivity and excellent conductivity is generally used as an electrode material thereof to prepare a top electrode of a bottom emission device or a bottom electrode of a top emission device.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a top emission type O L ED display panel 100 in the prior art, where the display panel 100 includes an array substrate 110, an anode 120 disposed on the array substrate 110, a hole transport layer (HT L) 130 disposed on the anode 120, an organic light emitting layer (EM L) 150 disposed on the hole transport layer (HT L) 130, an electron transport layer (ET L) 160 disposed on the organic light emitting layer 150, and a cathode 170 disposed on the electron transport layer (ET L) 160, and the anode 120 is a strongly reflective electrode, such design results in strong reflection of ambient light or other stray light, which causes reflection interference and deteriorates optical quality of the O L ED display.
However, the design results in reduced light extraction efficiency, and the use of the polarizer not only increases material and manufacturing costs, but also increases the thickness of the O L ED panel, and particularly increases the risk of producing defective products in the flexible display panel.
Therefore, there is a need to develop a new display panel to overcome the drawbacks of the prior art.
Disclosure of Invention
An object of the present invention is to provide an organic light emitting device capable of solving the problems of the prior art in which a highly reflective electrode reflects ambient light and affects display quality.
To achieve the above object, the present invention provides an organic light emitting device including a first electrode; the light emitting structure layer is arranged on the first electrode; the second electrode is arranged on the light-emitting structure layer; the first electrode or the second electrode has a photonic crystal structure; or the photonic crystal layer is arranged on one side of the first electrode far away from the second electrode or on one side of the second electrode far away from the first electrode.
Further, in other embodiments, when the photonic crystal layer is disposed on a side of the first electrode away from the second electrode, the first electrode is a transparent electrode; when the photonic crystal layer is arranged on one side of the second electrode far away from the first electrode, the second electrode is a transparent electrode.
Further, in other embodiments, wherein the photonic crystal layer comprises a plurality of photonic crystal structures, the photonic crystal structures comprise one-dimensional, two-dimensional, and three-dimensional photonic crystal structures.
Further, in other embodiments, the material of the photonic crystal layer is one of silicon oxide, silicon nitride, titanium oxide, zinc oxide, indium tin oxide, indium gallium zinc oxide, polymethyl methacrylate, polycarbonate, and polystyrene.
Further, in other embodiments, when the photonic crystal structure is a one-dimensional photonic crystal structure, the photonic crystal layer includes a first inorganic layer and a second inorganic layer, the first inorganic layer has a refractive index of N1 and a thickness of D1, the second inorganic layer has a refractive index of N2 and a thickness of D2, and when the wavelength λ of incident light satisfies 2 × (N1 × D1+ N2 × D2) ═ m λ, and m is a positive integer, the incident light will interfere coherently and be reflected.
Further, in other embodiments, wherein when the photonic crystal structure is a three-dimensional photonic crystal structure, the three-dimensional photonic crystal structure has a refractive index n, a particle diameter a, an angle θ between a plane having a plane distance d perpendicular to a crystal plane direction and incident light, and when a wavelength λ of the incident light satisfies m λ ═ 2d (n ═ 2 d)a 2-sin2θ)0.5And m is a positive integer, incident light is reflected.
The optical characteristics of the photonic crystal structure layer can be regulated and controlled by regulating and controlling the material, the particle size, the thickness and the like of the photonic crystal structure layer, so that the photonic crystal structure has different structural parameters or materials corresponding to different color display areas of pixels, light of corresponding wave bands is ensured to be selectively reflected in red, green and blue display areas respectively, the luminous light emitting efficiency of the corresponding color areas can be improved, and the reflection of ambient white light and other stray light is reduced.
Further, in other embodiments, the organic light emitting device includes red, green, and blue sub-pixel regions, the photonic crystal layer in the red sub-pixel region reflects light having a wavelength of 580nm to 660nm, the photonic crystal layer in the green sub-pixel region reflects light having a wavelength of 500nm to 580nm, and the photonic crystal layer in the blue sub-pixel region has a wavelength of 440nm to 500 nm.
Further, in other embodiments, wherein when the first electrode or the second electrode has a photonic crystal structure, the first electrode or the second electrode employs one of a conductive organic material, an organic-based composite material containing conductive particles or conductive nanowires; when the first electrode is a transparent electrode, the first electrode is made of one of indium tin oxide and indium gallium zinc oxide, and the thickness of the first electrode is 1-50 nm; when the second electrode is a transparent electrode, the second electrode is made of one of indium tin oxide, indium gallium zinc oxide, platinum, gold, silver and aluminum, and the thickness of the second electrode is 1-50 nm.
In order to achieve the above object, the present invention also provides a preparation method for preparing the organic light emitting device according to the present invention, the preparation method comprising the steps of: forming a first electrode; forming a light emitting structure layer on the first electrode; forming a second electrode on the light emitting structure layer; forming a photonic crystal layer on one side of the first electrode far away from the second electrode or on one side of the second electrode far away from the first electrode; in the step of forming the photonic crystal layer, a photonic crystal structure is deposited on one side of the first electrode far away from the second electrode or is arranged on one side of the second electrode far away from the first electrode by physical vapor deposition, chemical vapor deposition, atomic layer deposition, spraying method, spin coating method, template method, 3D printing method, self-assembly method, controllable assembly method and sol-gel method; or the first electrode is prepared to one side of the first electrode far away from the second electrode or is arranged at one side of the second electrode far away from the first electrode by a dry etching method, a wet etching method, an electrochemical etching method, a laser etching method, a plasma etching method and a laser direct writing method.
In order to achieve the above object, the present invention further provides a display panel, including a substrate layer; an active layer disposed on the substrate layer; a gate insulating layer disposed on the active layer; a gate electrode layer disposed on the gate insulating layer; the interlayer dielectric layer is arranged on the gate layer; the source drain layer is arranged on the interlayer dielectric layer; the flat layer is arranged on the source drain layer; the organic light-emitting device is arranged on the flat layer.
Compared with the prior art, the invention has the beneficial effects that: the invention provides an organic light-emitting device, a preparation method thereof and a display panel, wherein a photonic crystal structure reflecting light intensity with specific wavelength is applied to the organic light-emitting device, and the photonic band gap of the photonic crystal structure is utilized to enable the photonic crystal structure to have stronger reflection to light with specific wave band. The optical characteristics of the photonic crystal structure layer can be regulated and controlled by regulating and controlling the material and the structure of the photonic crystal structure layer, so that the photonic crystal structure has different structural parameters or materials corresponding to different color display areas of pixels, light of corresponding wave bands is selectively reflected in red, green and blue display areas respectively, the luminous light emitting efficiency of corresponding color areas can be improved, and the reflection of ambient white light and other stray light is reduced.
Furthermore, the preparation process of the photonic crystal structure does not affect the luminescent material, avoids the damage to the luminescent material, and has simpler process steps and strong feasibility of implementation.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a display panel provided in the prior art;
fig. 2 is a schematic structural view of an organic light-emitting device provided in embodiment 1 of the present invention;
FIG. 3 is a schematic structural view of a photonic crystal layer provided in example 1 of the present invention
Fig. 4 is a flowchart of a method for manufacturing an organic light-emitting device provided in embodiment 1 of the present invention;
fig. 5 is a schematic structural diagram of a display panel provided in embodiment 1 of the present invention;
fig. 6 is a schematic structural view of an organic light-emitting device provided in embodiment 2 of the present invention;
FIG. 7 is a schematic structural view of a photonic crystal layer provided in example 2 of the present invention
Fig. 8 is a flowchart of a method for manufacturing an organic light emitting device according to embodiment 2 of the present invention
Fig. 9 is a schematic structural diagram of a display panel provided in embodiment 2 of the present invention.
Description of the drawings in the background art:
a display panel-100; an array substrate-110;
anode layer-120; a hole transport layer-130;
an organic light-emitting layer-150;
electron transport layer-160;
a cathode layer-170.
Description of the figures in the detailed description:
a display panel-100; an array substrate-110;
an organic light emitting device-200; a light emitting structure layer-300;
a photonic crystal layer-210;
an anode-120; a hole transport layer-130;
an organic light-emitting layer-150; electron transport layer-160;
a cathode-170;
a substrate layer-111; an active layer-112;
a gate insulating layer-113; a gate layer-114;
interlayer dielectric layer-115; a source drain layer-116;
a planarization layer-117;
a first inorganic layer-211; a second inorganic layer-212;
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Example 1
Referring to fig. 2, fig. 2 is a schematic structural diagram of an organic light emitting device 200 according to the present embodiment, including a photonic crystal layer 210, an anode 120, a light emitting structure layer 300, and a cathode 170.
In other embodiments, the photonic crystal layer 210 may not be included and the anode 120 may have a photonic crystal structure.
The photonic crystal layer 210 is made of one of silicon oxide, silicon nitride, titanium oxide, zinc oxide, indium tin oxide, indium gallium zinc oxide, polymethyl methacrylate, polycarbonate, and polystyrene.
The photonic crystal layer 210 includes a number of photonic crystal structures including one-dimensional, two-dimensional, and three-dimensional photonic crystal structures.
When the photonic crystal structure is a one-dimensional photonic crystal structure, please refer to fig. 3, where fig. 3 is a schematic structural diagram of the photonic crystal layer 210, in the present embodiment, the photonic crystal layer 210 includes a first inorganic layer 211 and a second inorganic layer 212 that are periodically stacked, the refractive index of the first inorganic layer 211 is N1 and the thickness is D1, the refractive index of the second inorganic layer 212 is N2 and the thickness is D2, and when the wavelength λ of incident light satisfies 2 × (N1 × D1+ N2 × D2) ═ m λ and m is a positive integer, the incident light will generate coherent interference and be reflected.
When the photonic crystal structure is a three-dimensional photonic crystalIn the case of a bulk structure, the refractive index of the three-dimensional photonic crystal structure is n, the particle diameter is a, the angle between the plane of the interplanar spacing d perpendicular to the plane direction and the incident light is θ, and when the wavelength λ of the incident light satisfies m λ ═ 2d (n λ ═ 2 d)a 2-sin2θ)0.5And m is a positive integer, incident light is reflected.
The optical characteristics of the photonic crystal structure layer can be regulated and controlled by regulating and controlling the material, the particle size, the thickness and the like of the photonic crystal structure layer, so that the photonic crystal structure has different structural parameters or materials corresponding to different color display areas of pixels, light of corresponding wave bands is ensured to be selectively reflected in red, green and blue display areas respectively, the luminous light emitting efficiency of the corresponding color areas can be improved, and the reflection of ambient white light and other stray light is reduced.
The anode 120 is disposed on the photonic crystal layer 210, and the light emitting structure layer 300 is disposed on the anode 120; the light emitting structure layer 300 includes: a hole transport layer 130 disposed on the anode 120, an organic light emitting layer 150 disposed on the hole transport layer 130, and an electron transport layer 160 disposed between the organic light emitting layer 150 and the cathode 170.
And a cathode 170 disposed on the electron transport layer 160. In this embodiment, the organic light emitting device is a top emission device, the anode 120 is a transparent electrode, the anode 120 is one of indium tin oxide and indium gallium zinc oxide, and the thickness of the first electrode is 1-50 nm.
The organic light emitting device 200 includes red, green and blue sub-pixel regions, the photonic crystal layer 210 in the red sub-pixel region reflecting light having a wavelength of 580nm to 660nm, the photonic crystal layer 210 in the green sub-pixel region reflecting light having a wavelength of 500nm to 580nm, and the photonic crystal layer 210 in the blue sub-pixel region reflecting light having a wavelength of 440nm to 500 nm.
Referring to fig. 4, fig. 4 is a flowchart illustrating a method for manufacturing the organic light emitting device 200 according to the present embodiment, where the method includes steps S1-S4.
Step S1: a photonic crystal layer 210 is formed.
In the step of forming the photonic crystal layer 210, the photonic crystal structure is deposited by physical vapor deposition, chemical vapor deposition, atomic layer deposition, spray coating, spin coating, template, 3D printing, self-assembly, controlled assembly, or sol-gel; or by dry etching, wet etching, electrochemical etching, laser etching, plasma etching, or laser direct writing.
Step S2: the anode 120 is formed on the photonic crystal layer 210.
Step S3: a light emitting structure layer 300 is formed on the anode 120.
Step S4: the cathode electrode 170 is formed on the light emitting structure layer 300.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a display panel 100 provided in this embodiment, the display panel 100 includes an array substrate 110 and an organic light emitting device 220 according to this embodiment, the array substrate 110 includes a substrate layer 111; an active layer 112 provided on the substrate layer 111; a gate insulating layer 113 disposed on the active layer 112; a gate electrode layer 114 provided on the gate insulating layer 113; an interlayer dielectric layer 115 disposed on the gate layer 114; a source drain layer 116 disposed on the interlayer dielectric layer 115; a planarization layer 117 disposed on the source/drain layer 116; the organic light emitting device 200 according to the present embodiment is provided on the planarization layer 117.
Example 2
Referring to fig. 6, fig. 6 is a schematic structural diagram of an organic light emitting device 200 according to the present embodiment, including an anode 120, a light emitting structure layer 300, a cathode 170, and a photonic crystal layer 210.
The light emitting structure layer 300 is disposed on the anode 120; the light emitting structure layer 300 includes: a hole transport layer 130 disposed on the anode 120, an organic light emitting layer 150 disposed on the hole transport layer 130, and an electron transport layer 160 disposed between the organic light emitting layer 150 and the cathode 170.
And a cathode 170 disposed on the electron transport layer 160. In this embodiment, the organic light emitting device is a bottom emission device, the cathode 170 is a transparent electrode, the cathode 170 is made of one of indium tin oxide, indium gallium zinc oxide, platinum, gold, silver, and aluminum, and the thickness of the cathode 170 is 1-50 nm.
In other embodiments, the photonic crystal layer 210 may not be included and the anode 120 may have a photonic crystal structure.
The photonic crystal layer 210 is made of one of silicon oxide, silicon nitride, titanium oxide, zinc oxide, indium tin oxide, indium gallium zinc oxide, polymethyl methacrylate, polycarbonate, and polystyrene.
The photonic crystal layer 210 includes a number of photonic crystal structures including one-dimensional, two-dimensional, and three-dimensional photonic crystal structures.
When the photonic crystal structure is a one-dimensional photonic crystal structure, please refer to fig. 7, and fig. 7 is a schematic structural diagram of the photonic crystal layer 210, in this embodiment, the photonic crystal layer 210 includes a first inorganic layer 211 and a second inorganic layer 212 that are periodically stacked, the refractive index of the first inorganic layer 211 is N1 and the thickness is D1, the refractive index of the second inorganic layer 212 is N2 and the thickness is D2, and when the wavelength λ of incident light satisfies 2 × (N1 × D1+ N2 × D2) ═ m λ and m is a positive integer, the incident light will generate coherent interference and be reflected.
When the photonic crystal structure is a three-dimensional photonic crystal structure, the refractive index of the three-dimensional photonic crystal structure is n, the particle diameter is a, the angle between the plane of the plane perpendicular to the crystal plane direction and the plane of the plane spacing d and the incident light is theta, and when the wavelength lambda of the incident light satisfies that m lambda is 2d (n lambda is equal toa 2-sin2θ)0.5And m is a positive integer, incident light is reflected.
The optical characteristics of the photonic crystal structure layer can be regulated and controlled by regulating and controlling the material, the particle size, the thickness and the like of the photonic crystal structure layer, so that the photonic crystal structure has different structural parameters or materials corresponding to different color display areas of pixels, light of corresponding wave bands is ensured to be selectively reflected in red, green and blue display areas respectively, the luminous light emitting efficiency of the corresponding color areas can be improved, and the reflection of ambient white light and other stray light is reduced.
The organic light emitting device 200 includes red, green and blue sub-pixel regions, the photonic crystal layer 210 in the red sub-pixel region reflecting light having a wavelength of 580nm to 660nm, the photonic crystal layer 210 in the green sub-pixel region reflecting light having a wavelength of 500nm to 580nm, and the photonic crystal layer 210 in the blue sub-pixel region reflecting light having a wavelength of 440nm to 500 nm.
Referring to fig. 8, fig. 8 is a flowchart illustrating a method for manufacturing the organic light emitting device 200 according to the present embodiment, where the method includes steps S1-S4.
Step S1: an anode 120 is formed.
Step S2: a light emitting structure layer 300 is formed on the anode 120.
Step S3: the cathode electrode 170 is formed on the light emitting structure layer 300.
Step S4: a photonic crystal layer 210 is formed on the cathode 170.
In the step of forming the photonic crystal layer 210, the photonic crystal structure is deposited on the cathode 170 by physical vapor deposition, chemical vapor deposition, atomic layer deposition, spray coating, spin coating, templating, 3D printing, self-assembly, controlled assembly, or sol-gel; or by dry etching, wet etching, electrochemical etching, laser etching, plasma etching, laser direct writing, on the cathode 170.
Referring to fig. 9, fig. 9 is a schematic structural diagram of a display panel 100 according to the present embodiment, in which the display panel 100 includes an array substrate 110 and an organic light emitting device 220 according to the present embodiment, the array substrate 110 includes a substrate layer 111; an active layer 112 provided on the substrate layer 111; a gate insulating layer 113 disposed on the active layer 112; a gate electrode layer 114 provided on the gate insulating layer 113; an interlayer dielectric layer 115 disposed on the gate layer 114; a source drain layer 116 disposed on the interlayer dielectric layer 115; a planarization layer 117 disposed on the source/drain layer 116; the organic light emitting device 200 according to the present invention is provided on the planarization layer 117.
The invention has the beneficial effects that: the invention provides an organic light-emitting device, a preparation method thereof and a display panel, wherein a photonic crystal structure reflecting light intensity with specific wavelength is applied to the organic light-emitting device, and the photonic band gap of the photonic crystal structure is utilized to enable the photonic crystal structure to have stronger reflection to light with specific wave band. The optical characteristics of the photonic crystal structure layer can be regulated and controlled by regulating and controlling the material and the structure of the photonic crystal structure layer, so that the photonic crystal structure has different structural parameters or materials corresponding to different color display areas of pixels, light of corresponding wave bands is selectively reflected in red, green and blue display areas respectively, the luminous light emitting efficiency of corresponding color areas can be improved, and the reflection of ambient white light and other stray light is reduced.
Furthermore, the preparation process of the photonic crystal structure does not affect the luminescent material, avoids the damage to the luminescent material, and has simpler process steps and strong feasibility of implementation.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The organic light emitting device, the manufacturing method thereof, and the display panel provided in the embodiments of the present application are described in detail above, and specific examples are applied herein to explain the principles and embodiments of the present application, and the description of the embodiments above is only used to help understand the technical solutions and core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. An organic light-emitting device, comprising:
a first electrode;
the light emitting structure layer is arranged on the first electrode;
the second electrode is arranged on the light-emitting structure layer;
the first electrode or the second electrode has a photonic crystal structure; or also comprises
And the photonic crystal layer is arranged on one side of the first electrode, which is far away from the second electrode, or on one side of the second electrode, which is far away from the first electrode.
2. The organic light-emitting device according to claim 1, wherein when the photonic crystal layer is provided on a side of the first electrode away from the second electrode, the first electrode is a transparent electrode;
when the photonic crystal layer is arranged on one side of the second electrode far away from the first electrode, the second electrode is a transparent electrode.
3. The organic light emitting device of claim 1, wherein the photonic crystal layer comprises a plurality of photonic crystal structures including one-, two-, and three-dimensional photonic crystal structures.
4. The organic light-emitting device according to claim 1, wherein the material of the photonic crystal layer is one of silicon oxide, silicon nitride, titanium oxide, zinc oxide, indium tin oxide, indium gallium zinc oxide, polymethyl methacrylate, polycarbonate, and polystyrene.
5. The organic light-emitting device according to claim 1, wherein when the photonic crystal structure is a one-dimensional photonic crystal structure, the photonic crystal layer comprises a first inorganic layer having a refractive index of N1 and a thickness of D1 and a second inorganic layer having a refractive index of N2 and a thickness of D2, and when a wavelength λ of incident light satisfies 2 × (N1 × D1+ N2 × D2) ═ m λ, and m is a positive integer, coherent interference occurs to the incident light, and the incident light is reflected.
6. The organic light-emitting device according to claim 1, wherein when the photonic crystal structure is a three-dimensional photonic crystal structure, the three-dimensional photonic crystal structure has a refractive index n, a particle diameter a, an angle θ between a plane having a plane distance d perpendicular to a crystal plane direction and incident light, and when a wavelength λ of the incident light satisfies m λ -2 d (n ═ 2da 2-sin2θ)0.5And m is a positive integer, incident light is reflected.
7. The organic light emitting device according to claim 1, wherein the organic light emitting device comprises red, green, and blue sub-pixel regions, the photonic crystal layer in the red sub-pixel region reflects light having a wavelength of 580nm to 660nm, the photonic crystal layer in the green sub-pixel region reflects light having a wavelength of 500nm to 580nm, and the photonic crystal layer in the blue sub-pixel region has a wavelength of 440nm to 500 nm.
8. The organic light-emitting device according to claim 2, wherein when the first electrode or the second electrode has a photonic crystal structure, the first electrode or the second electrode is formed using one of a conductive organic material, an organic-based composite material containing conductive particles or conductive nanowires; when the first electrode is a transparent electrode, the first electrode is made of one of indium tin oxide and indium gallium zinc oxide, and the thickness of the first electrode is 1-50 nm; when the second electrode is a transparent electrode, the second electrode is made of one of indium tin oxide, indium gallium zinc oxide, platinum, gold, silver and aluminum, and the thickness of the second electrode is 1-50 nm.
9. A method of manufacturing an organic light emitting device according to claim 1, comprising the steps of:
forming a first electrode;
forming a light emitting structure layer on the first electrode;
forming a second electrode on the light emitting structure layer; and
forming a photonic crystal layer on one side of the first electrode far away from the second electrode or on one side of the second electrode far away from the first electrode;
in the step of forming the photonic crystal layer, a photonic crystal structure is deposited on one side of the first electrode far away from the second electrode or is arranged on one side of the second electrode far away from the first electrode by physical vapor deposition, chemical vapor deposition, atomic layer deposition, spraying method, spin coating method, template method, 3D printing method, self-assembly method, controllable assembly method and sol-gel method; or
The first electrode is prepared to one side of the first electrode far away from the second electrode or is arranged at one side of the second electrode far away from the first electrode by a dry etching method, a wet etching method, an electrochemical etching method, a laser etching method, a plasma etching method and a laser direct writing method.
10. A display panel, comprising
A substrate layer;
an active layer disposed on the substrate layer;
a gate insulating layer disposed on the active layer;
a gate electrode layer disposed on the gate insulating layer;
the interlayer dielectric layer is arranged on the gate layer;
the source drain layer is arranged on the interlayer dielectric layer;
the flat layer is arranged on the source drain layer;
the organic light emitting device of claim 1, disposed on the planarization layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863925A (en) * | 2020-07-31 | 2020-10-30 | 京东方科技集团股份有限公司 | Display panel, display device and display panel manufacturing method |
| CN112310308A (en) * | 2020-10-22 | 2021-02-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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