CN111430507A - Production process of battery piece for black photovoltaic module - Google Patents
Production process of battery piece for black photovoltaic module Download PDFInfo
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- CN111430507A CN111430507A CN202010349280.2A CN202010349280A CN111430507A CN 111430507 A CN111430507 A CN 111430507A CN 202010349280 A CN202010349280 A CN 202010349280A CN 111430507 A CN111430507 A CN 111430507A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 238000007747 plating Methods 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 238000005406 washing Methods 0.000 claims abstract description 10
- 239000003513 alkali Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 229910017107 AlOx Inorganic materials 0.000 claims abstract description 5
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 5
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 238000002161 passivation Methods 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 10
- 239000012670 alkaline solution Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 235000013842 nitrous oxide Nutrition 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001125 extrusion Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000002912 waste gas Substances 0.000 claims description 3
- 239000000920 calcium hydroxide Substances 0.000 claims description 2
- 235000011116 calcium hydroxide Nutrition 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- -1 silver-aluminum Chemical compound 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 229910020451 K2SiO3 Inorganic materials 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 229910004074 SiF6 Inorganic materials 0.000 description 2
- 229910020479 SiO2+6HF Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a production process of a cell for a black photovoltaic module, which comprises the following steps: s1: surface texturing and alkali washing; s2: phosphorus diffusion; s3: plasma etching; s4: removing phosphorus silicon glass; s5: plating an antireflection film; s6: screen printing and rapid sintering; s7: testing and grading; s8: and (6) packaging. The cell structure is characterized in that a selective emitter junction is prepared on the front surface, and a dielectric film passivation layer AlOx/SiNx is deposited on the back surface, so that the photoelectric conversion efficiency of the cell can be improved, the composition of a diffusion layer is reduced, and the short wave response of light is improved; the contact resistance between the front metal electrode and silicon is reduced, and the short-circuit current, the open-circuit voltage and the fill factor are improved; the back surface recombination rate is reduced, and the open-circuit voltage is increased; the long-wave light reflection effect of the back surface is enhanced, and the short-circuit current is improved. The coating film of the cell slice adopts a silicon nitride film, and the refractive index of the silicon nitride is as follows: 1.9-2.7, and further enabling the battery piece to have the effect of dark color or even black color.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a production process of a cell for a black photovoltaic module.
Background
The solar cell is a key part for producing a solar module, plays a role in converting light energy into electric energy, the photovoltaic module is formed by serially packaging single cells, high voltage can be obtained through the serially packaged modules, and high current can be obtained by connecting a plurality of strings of cells in parallel.
In the market, most photovoltaic modules are silver white middle cell pieces, the middle cell pieces are partially blue, so that glare pollution exists in the application process of a photovoltaic system, and for some special building designs, such as black building style designs, common cell pieces cannot be applied after being packaged into the photovoltaic modules.
According to the patent number: CN 201410268537-wafer solar cell and solar cell production method, the referenced patent only improves the efficiency of the solar cell sheet.
According to the patent number: CN 201710435946-solar cell film coating method and solar cell, the purpose of film coating of the referenced patent is to reduce the pollution degree and the breakage rate of silicon wafers.
Therefore, black photovoltaic modules manufactured by common solar cells in use in the market are only dark blue, and cannot achieve the effect of complete black, so that further research and improvement are needed in the field of solar cells suitable for important parts of the complete black photovoltaic modules.
Disclosure of Invention
In order to overcome the defects, the invention provides a production process of a cell for a black photovoltaic module, wherein the cell is black and has high photoelectric conversion efficiency.
The invention realizes the purpose through the following technical scheme:
the production process of the cell for the black photovoltaic module comprises the following steps:
s1: surface texturing and alkali washing, preparing an alkaline solution, keeping the temperature of the solution at 7-10 ℃, and carrying out alkali washing on the surface of the silicon wafer, wherein in the alkaline solution, the mass ratio of KOH to H2O is 1.5-2.5, the alkaline solution is used for removing a surface damage layer and reducing the surface reflectivity, and the chemical reaction formula is Si +2KOH + H2O → K2SiO3+2H2 ℃ ×;
s2: phosphorus diffusion, adopt phosphorus oxychloride liquid source diffusion method, form the N type layer on the surface of the silicon chip, wherein, the battery piece adopts single crystal P type PERC + SE battery piece, the front prepares the selective emitter junction, carry on the heavy doping in the contact site of metal grid and silicon chip, carry on the light doping in the position between the electrode, such structure can reduce the diffusion layer and compound, can improve the short-wave response of the light from this, reduce the contact resistance of the front metal electrode and silicon at the same time, make short-circuit current, open-circuit voltage and fill factor all get better improvement, thus raise and convert the efficiency, the chemical reaction formula: 4POCl3+3O2 → 2P2O5+6Cl2 ↓, 2P2O5+5Si → 5SiO2+4P ↓;
s3: plasma etching is carried out, an acid solution is prepared, the temperature of the solution is kept to be 10-15 ℃, back side corrosion is carried out on the silicon chip, meanwhile, a dielectric film passivation layer AlOx/SiNx is deposited on the back side, the concentration of HNO3 in the acid solution is 85% -95%, and the chemical reaction formula is as follows: 3Si +4HNO3 → 3SiO2+4NO +2H2O, SiO2+6HF → H2[ SiF6] +2H 2O;
s4: removing phosphorus silicon glass;
s5: plating an antireflection film, wherein a silicon nitride film is adopted for plating the film on the battery piece, the film plating time of the battery piece is 20-70 min, the temperature during film plating is 200-500 ℃, mixed gas is introduced in the film plating process and comprises silane, ammonia gas and laughing gas, the volume ratio of the silane to the laughing gas is 0.3-7, the thickness of the final silicon nitride film is 30-75 nm or 90-300 nm, and the refractive index of silicon nitride is as follows: 1.9-2.7;
s6: silk-screen printing and rapid sintering, wherein a template with an image or pattern is attached to a silk screen for printing, and when a printing stock is directly placed under the silk screen with the template, silk-screen printing ink or paint passes through meshes in the middle of the silk screen under the extrusion of a scraper and is printed on the printing stock;
s7: testing and grading;
s8: and (6) packaging.
Preferably, in the step S1, the time of alkali washing is 20-40 min.
Preferably, in the step S2, the generated waste gas is filtered by passing through the milk of lime.
Preferably, in the step S2, the reaction temperature is 800 to 900 ℃.
Preferably, in step S3, the back surface of the silicon wafer is polished.
Preferably, in step S6, the stencil on the screen has a portion of the screen apertures sealed so that the paste cannot pass through the screen but only the image portion passes through, so that only the image area is imprinted on the substrate.
Preferably, in step S6, special front silver, back silver and back aluminum pastes are used.
The invention has the beneficial effects that: in the production process of the cell for the black photovoltaic module,
1. the cell structure is characterized in that a selective emitter junction is prepared on the front surface, and a dielectric film passivation layer AlOx/SiNx is deposited on the back surface, so that the cell structure can improve the photoelectric conversion efficiency of the cell, reduce the composition of a diffusion layer and improve the short-wave response of light; the contact resistance between the front metal electrode and silicon is reduced, and the short-circuit current, the open-circuit voltage and the fill factor are improved; the back surface recombination rate is reduced, and the open-circuit voltage is increased; the long-wave light reflection effect of the back surface is enhanced, and the short-circuit current is improved.
2. The coating film of the cell slice adopts a silicon nitride film, mixed gas according to a certain proportion is introduced in the coating process, the thickness of the final silicon nitride film is 30-75 nm or 90-300 nm, and the refractive index of the silicon nitride is as follows: 1.9-2.7, and further enabling the battery piece to have the effect of dark color or even black color.
Detailed Description
The present invention will now be described in further detail.
A production process of a cell for a black photovoltaic module comprises the following steps:
s1: surface texturing and alkaline washing, preparing an alkaline solution, keeping the temperature of the solution at 7-10 ℃, keeping the alkaline washing time at 20-40 min, and performing alkaline washing on the surface of the silicon wafer, wherein the mass ratio of KOH to H2O in the alkaline solution is 1.5-2.5, the alkaline solution is used for removing a surface damage layer and reducing the surface reflectivity, and the chemical reaction formula is Si +2KOH + H2O → K2SiO3+2H2 ×;
s2: phosphorus diffusion, adopt phosphorus oxychloride liquid source diffusion method, form the N type layer on the surface of the silicon chip, the reaction temperature is at 800-900 ℃, the waste gas produced is let into the lime milk and filters, wherein, the battery piece adopts the monocrystalline P type PERC + SE battery piece, the front prepares the selective emitter junction, carry on the heavy doping in the contact site of metal grid and silicon chip, carry on the light doping between the position of electrode, the structure can reduce the diffusion layer and compound, can improve the short wave response of the light from this, reduce the contact resistance of the front metal electrode and silicon at the same time, make short-circuit current, open-circuit voltage and fill factor all get the better improvement, thus raise and convert the efficiency, the chemical reaction formula: 4POCl3+3O2 → 2P2O5+6Cl2 ↓, 2P2O5+5Si → 5SiO2+4P ↓;
s3: plasma etching is carried out, an acid solution is prepared, the temperature of the solution is kept to be 10-15 ℃, back side corrosion is carried out on the silicon chip, meanwhile, a dielectric film passivation layer AlOx/SiNx is deposited on the back side, the back side of the silicon chip is polished after etching, wherein in the acid solution, the concentration of HNO3 is 85% -95%, and the chemical reaction formula is as follows: 3Si +4HNO3 → 3SiO2+4NO +2H2O, SiO2+6HF → H2[ SiF6] +2H 2O;
s4: removing phosphorus silicon glass;
s5: plating an antireflection film, wherein a silicon nitride film is adopted for plating the film on the battery piece, the film plating time of the battery piece is 20-70 min, the temperature during film plating is 200-500 ℃, mixed gas is introduced in the film plating process and comprises silane, ammonia gas and laughing gas, the volume ratio of the silane to the laughing gas is 0.3-7, the thickness of the final silicon nitride film is 30-75 nm or 90-300 nm, and the refractive index of silicon nitride is as follows: 1.9-2.7;
s6: silk-screen printing and rapid sintering, wherein a template with an image or a pattern is attached to a silk screen for printing, when a printing stock is directly placed below the silk screen with the template, silver paste is printed by silk-screen printing, and silver-aluminum paste passes through meshes in the middle of the silk screen under the extrusion of a scraper and is printed on the printing stock, and a part of small holes of the silk screen of the template on the silk screen is sealed, so that the paste cannot pass through the silk screen, and only the image part can pass through, therefore, only the image part on the printing stock has a print, wherein the paste adopts special front silver paste, back silver paste and back aluminum paste;
s7: testing and grading;
s8: and (6) packaging.
In light of the foregoing, it is to be understood that various changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (7)
1. A production process of a cell for a black photovoltaic module is characterized by comprising the following steps: the method comprises the following steps:
s1: surface texturing and alkali washing, preparing an alkaline solution, keeping the temperature of the solution at 7-10 ℃, and carrying out alkali washing on the surface of the silicon wafer, wherein the mass ratio of KOH to H2O in the alkaline solution is 1.5-2.5;
s2: phosphorus diffusion, adopting a phosphorus oxychloride liquid source diffusion method to form an N-type layer on the surface of the silicon wafer, wherein heavy doping is carried out on the contact part of the metal grid and the silicon wafer, and light doping is carried out between the electrodes;
s3: performing plasma etching, preparing an acid solution, keeping the temperature of the solution at 10-15 ℃, performing back etching on the silicon wafer, and depositing a dielectric film passivation layer AlOx/SiNx on the back, wherein the concentration of HNO3 in the acid solution is 85% -95%;
s4: removing phosphorus silicon glass;
s5: plating an antireflection film, wherein a silicon nitride film is adopted for plating the film on the battery piece, the film plating time of the battery piece is 20-70 min, the temperature during film plating is 200-500 ℃, mixed gas is introduced in the film plating process and comprises silane, ammonia gas and laughing gas, the volume ratio of the silane to the laughing gas is 0.3-7, the thickness of the final silicon nitride film is 30-75 nm or 90-300 nm, and the refractive index of silicon nitride is as follows: 1.9-2.7;
s6: silk-screen printing and rapid sintering, namely, attaching a template with an image or a pattern on a silk screen for printing, and when a printing stock is directly placed below the silk screen with the template, silk-screen printing silver paste and silver-aluminum paste pass through meshes in the middle of the silk screen under the extrusion of a scraper and are printed on the printing stock;
s7: testing and grading;
s8: and (6) packaging.
2. The process for producing a cell sheet for a black photovoltaic module according to claim 1, wherein: in the step S1, the time of alkali washing is 20-40 min.
3. The process for producing a cell sheet for a black photovoltaic module according to claim 1, wherein: in step S2, the waste gas generated is filtered by passing through the milk of lime.
4. The process for producing a cell sheet for a black photovoltaic module according to claim 1, wherein: in the step S2, the reaction temperature is 800-900 ℃.
5. The process for producing a cell sheet for a black photovoltaic module according to claim 1, wherein: in step S3, the back surface of the silicon wafer is polished.
6. The process for producing a cell sheet for a black photovoltaic module according to claim 1, wherein: in step S6, the stencil on the screen has a portion of the screen apertures sealed so that the paste cannot pass through the screen but only the image portion passes through, thereby leaving only the image portion on the substrate with print.
7. The process for producing a cell sheet for a black photovoltaic module according to claim 1, wherein: in step S6, a special back silver and back aluminum paste is used.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112652678A (en) * | 2020-12-09 | 2021-04-13 | 晋能清洁能源科技股份公司 | Polycrystalline variable-temperature deposition diffusion method and application thereof |
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| CN205452298U (en) * | 2015-12-24 | 2016-08-10 | 合肥晶澳太阳能科技有限公司 | Novel subassembly is deceived to photovoltaic |
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| CN110459615A (en) * | 2019-08-19 | 2019-11-15 | 通威太阳能（成都）有限公司 | A kind of composite dielectric passivation layer structure solar cell and its preparation process |
| CN110581183A (en) * | 2019-08-29 | 2019-12-17 | 江苏顺风新能源科技有限公司 | Pure black component single crystal PERC battery and preparation process thereof |
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