CN111427243A - Regeneration method of photoresist stripping liquid - Google Patents

Regeneration method of photoresist stripping liquid Download PDF

Info

Publication number
CN111427243A
CN111427243A CN202010088819.3A CN202010088819A CN111427243A CN 111427243 A CN111427243 A CN 111427243A CN 202010088819 A CN202010088819 A CN 202010088819A CN 111427243 A CN111427243 A CN 111427243A
Authority
CN
China
Prior art keywords
liquid
stripping liquid
compound
additive
alcohol ether
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010088819.3A
Other languages
Chinese (zh)
Inventor
卢燕燕
张丽燕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huizhou Dacheng Microelectronic Materials Co ltd
Original Assignee
Huizhou Dacheng Microelectronic Materials Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huizhou Dacheng Microelectronic Materials Co ltd filed Critical Huizhou Dacheng Microelectronic Materials Co ltd
Priority to CN202010088819.3A priority Critical patent/CN111427243A/en
Publication of CN111427243A publication Critical patent/CN111427243A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The invention discloses a regeneration method of photoresist stripping liquid, which comprises the following steps: s1: recovering the stripping liquid waste liquid after the new stripping liquid is used, and distilling and pressurizing the stripping liquid waste liquid to obtain a purified liquid of the stripping liquid waste liquid; the purified liquid contains an amide compound, an alcohol ether compound, and an amine compound; s2: preparing an additive, wherein the additive contains an alcohol ether compound, an amine compound, a corrosion inhibitor and a wetting agent; s3: and (4) mixing the stripping liquid waste liquid in the step (S1) with an additive, and preparing a new stripping liquid, wherein an amide compound or an alcohol ether compound is added in the preparation process. The invention carries out pressurization, distillation and other treatments on the stripping liquid waste liquid to obtain the purified liquid, substances contained in the purified liquid are certain components contained in the stripping liquid new liquid, and the additives and raw materials can be directly added after the purified liquid is obtained by preparing the additives in advance, and the stripping liquid new liquid is prepared again, so that the stripping liquid waste liquid can be recycled, and the waste of resources and the harm to the environment are reduced.

Description

Regeneration method of photoresist stripping liquid
Technical Field
The invention relates to the technical field of stripping liquid, in particular to a regeneration method of photoresist stripping liquid.
Background
The electronic industry is rapidly developing, and the application of the photoresist is more and more extensive. In the manufacturing process of semiconductor components, after the required lines are etched on the bottom layer metal material through the coating-developing-etching process, the next process can be carried out only if any substrate can not be damaged while the residual photoresist is removed. Therefore, the stripping quality of the photoresist also directly affects the quality of the product.
With the development of the electronic industry and the appearance of advanced panels, the use of photoresist stripper is increasing. The stripping solution waste liquid contains photoresist resin, water and some metal impurities, and the treatment of the stripping solution waste liquid is mainly implemented by incineration or low-level recovery, but the stripping solution waste liquid can not be effectively recovered after being used in a large amount, so that the environment, resources and the like are greatly influenced.
In view of the above, the applicant developed the following method for recovering and regenerating the photoresist stripper after use.
Disclosure of Invention
The invention aims to provide a regeneration method of a photoresist stripping solution.
In order to achieve the purpose, the invention adopts the following technical scheme:
the application discloses high-generation panel copper process photoresist stripping liquid, which comprises the following components in parts by mass: the regeneration method of the photoresist stripping liquid comprises the following steps:
s1: recovering the stripping liquid waste liquid after the new stripping liquid is used, and distilling and pressurizing the stripping liquid waste liquid to obtain a purified liquid of the stripping liquid waste liquid; the purified liquid contains an amide compound, an alcohol ether compound, and an amine compound;
s2: preparing an additive, wherein the additive contains an alcohol ether compound, an amine compound, a corrosion inhibitor and a wetting agent;
s3: and (4) mixing the stripping liquid waste liquid in the step (S1) with an additive, and preparing a new stripping liquid, wherein an amide compound or an alcohol ether compound is added in the preparation process.
The photoresist stripping solution is a pure organic solvent system, 80-95% of effective substances can be recovered from waste liquid through distillation to obtain a purified liquid, in the preparation mode, the components contained in the purified liquid and the components contained in the additive have phase repetition, the additive is considered to be prepared according to the components of the known stripping solution new liquid, and the additive can be added and supplemented according to the component difference between the purified liquid and the stripping solution new liquid, so that the purified liquid and the additive can have the same components as the stripping solution new liquid after being mixed.
Then, it is known that, on the basis of knowing the components of the stripping liquid new liquid in advance, an additive containing some components in the stripping liquid new liquid may be prepared in advance, and then when a purified liquid is obtained by preparing the recovered stripping liquid waste liquid, the additive may be added to the purified liquid, and then the mass fraction may be adjusted.
The purified liquid is obtained by removing components of the non-stripping liquid new liquid from the stripping liquid waste liquid by pressurizing and distilling the stripping liquid waste liquid, and the component substances contained in the purified liquid are all component substances contained in the stripping liquid new liquid.
In a further technical scheme, the mass of the amide compound contained in the purified liquid obtained in the step 1 is as follows: 45% -60%; the alcohol ether compound comprises the following components in percentage by mass: 35% -50%; the mass of the amine compound contained is as follows: 1 to 2 percent.
In a further technical scheme, the additive contains alcohol ether compounds, and the mass fraction of the alcohol ether compounds is as follows: 30% -50%; the mass fraction of the amine compound is: 35% -55%; the mass of the corrosion inhibitor is as follows: 6 to 12 percent; the wetting agent comprises the following components in percentage by mass: 1 to 7 percent.
In a further technical scheme, the amide compound contained in the stripping liquid waste liquid in the step S1 and the amide compound contained in the additive in the step S2 are one or more of N-methylformamide (NMF), N-methylacetamide and N, N-dimethylformamide.
In a further technical scheme, the alcohol ether compound contained in the stripping liquid waste liquid in the step S1 and the alcohol ether compound contained in the additive in the step S2 are one or more of diethylene glycol butyl ether (BDG), diethylene glycol methyl ether, ethylene glycol methyl ether and ethylene glycol ethyl ether.
In a further technical scheme, the amine compound contained in the stripping liquid waste liquid in the step S1 and the amine compound contained in the additive in the step S2 are cyclic amine and chain amine.
In a further technical scheme, the cyclic amine is one or more of aminoethylpiperazine, hydroxyethyl piperazine and aminoethylmorpholine; the chain amine is one or more of ethanolamine, diethanolamine, triethanolamine, diglycolamine, isopropanolamine, methyldiethanolamine and AMP-95.
In a further technical scheme, the triazole compound is any one of Benzotriazole (BTA) and tolyltriazole (TTA).
In a further technical scheme, the wetting agent is a hydroxyl-containing compound, and specifically is any one of polyethylene glycol and glycerol.
In the components, the amide is used for dissolving the photoresist;
the alcohol ether is used for wetting, swelling and dissolving the photoresist;
cyclic amine and chain amine are used for permeating and breaking the weak bonding force among photoresist molecules;
the corrosion inhibitor is used for reducing the corrosion speed of metal;
the wetting agent can enhance the hydrophilicity, so that the stripping liquid has good hydrophilicity and can rapidly and efficiently strip and dissolve the photoresist.
In a further technical scheme, the new stripping liquid is prepared again in step S3, and an amide compound or an alcohol ether compound is added during the preparation, wherein the mass fraction of the added purified liquid is as follows: 70-95 percent of additive, and the mass fraction of the added additive is as follows: 5% -10%; the mass fractions of the added amide compounds are as follows: 0 to 15 percent; the mass fraction of the added alcohol ether compound is 0-5%.
The additional addition of the amide compound and the alcohol ether compound in the preparation process aims to adjust the mass fractions of the components in the stripping liquid new liquid prepared in the center, and the proportion is adjusted to a better proportion, so that the effect of the stripping liquid new liquid is better.
According to the technical scheme, compared with the prior art, the invention has the following beneficial effects: the invention carries out pressurization, distillation and other treatments on the stripping liquid waste liquid to obtain the purified liquid, substances contained in the purified liquid are certain components contained in the stripping liquid new liquid, and the additives and raw materials can be directly added after the purified liquid is obtained by preparing the additives in advance, and the stripping liquid new liquid is prepared again, so that the stripping liquid waste liquid can be recycled, and the waste of resources and the harm to the environment are reduced.
Detailed Description
In the prior art, the waste stripping solution contains photoresist resin, water and some metal impurities, and the waste stripping solution is mainly treated by incineration or low-level recovery, so that the waste stripping solution is used in a large amount but cannot be effectively recovered, or the content of the waste stripping solution needs to be analyzed in a large amount of time after the waste stripping solution is recovered, and a large amount of time is spent for regeneration treatment, so that the utilization rate of the waste stripping solution is influenced.
The invention has prior knowledge about the content and proportion of the known stripping solution, and prepares the new stripping solution after adding the additives and certain raw materials by a method of preparing the additives in advance.
In the invention, the further treatment and processing of the recovered stripping liquid waste liquid are carried out by adopting a pressurizing, distilling and other modes in the prior art, and can be carried out by adopting a staged pressure-variable rectifying tower for pressurizing and distilling.
Table 1: the components of the known stripping liquid are as follows:
Figure BDA0002383011200000041
table two: components of the additive
Components Ratio of
NMF 0
BDG 36
AMP-95 1.5
Aminoethyl piperazine 50.6
BTA 1.5
MBTA 7.4
Wetting agent 3
Table three: purification of the Components of the liquid
Figure BDA0002383011200000042
Figure BDA0002383011200000051
Table four: preparation of novel stripping solution
Figure BDA0002383011200000052
Figure BDA0002383011200000061
In the process of processing the purified liquid and preparing the new stripping liquid, an additive is required to be prepared in advance, the additive does not contain an amide compound, and as can be seen from the table four, the new stripping liquid with the same components as those in the table 1 is obtained again by adding the additive and NMF or BDG into the purified liquid in the preparation process, and the new stripping liquid can reach the same components and the same or approximately the same technical effects as those of the new stripping liquid in the table 1.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. The regeneration method of the photoresist stripping liquid is characterized by comprising the following steps: the method comprises the following steps:
s1: recovering the stripping liquid waste liquid after the new stripping liquid is used, and distilling and pressurizing the stripping liquid waste liquid to obtain a purified liquid of the stripping liquid waste liquid; the purified liquid contains an amide compound, an alcohol ether compound, and an amine compound;
s2: preparing an additive, wherein the additive contains an alcohol ether compound, an amine compound, a corrosion inhibitor and a wetting agent;
s3: and (4) mixing the stripping liquid waste liquid in the step (S1) with an additive, and preparing a new stripping liquid, wherein an amide compound or an alcohol ether compound is added in the preparation process.
2. The method for regenerating a resist stripping liquid according to claim 1, characterized in that: the mass of the amide compound contained in the purified liquid obtained in the step 1 is as follows: 45% -60%;
the alcohol ether compound comprises the following components in percentage by mass: 35% -50%;
the mass of the amine compound contained is as follows: 1 to 2 percent.
3. The method for regenerating a resist stripping liquid according to claim 1, characterized in that: the additive contains alcohol ether compounds, and the mass fraction of the alcohol ether compounds is as follows: 30% -50%;
the mass fraction of the amine compound is: 35% -55%;
the mass of the corrosion inhibitor is as follows: 6 to 12 percent;
the wetting agent comprises the following components in percentage by mass: 1 to 7 percent.
4. The method for regenerating a resist stripping liquid according to claim 1, characterized in that: the amide compound contained in the stripping liquid waste liquid in the step S1 and the amide compound contained in the additive in the step S2 are one or more of N-methylformamide (NMF), N-methylacetamide and N, N-dimethylformamide.
5. The method for regenerating a resist stripping liquid according to claim 1, characterized in that: the alcohol ether compound contained in the stripping liquid waste liquid in the step S1 and the alcohol ether compound contained in the additive in the step S2 are one or more of diethylene glycol butyl ether (BDG), diethylene glycol methyl ether, ethylene glycol methyl ether and ethylene glycol ethyl ether.
6. The method for regenerating a resist stripping liquid according to claim 1, characterized in that: the amine compound contained in the stripping liquid waste liquid in the step S1 and the amine compound contained in the additive in the step S2 are cyclic amine and chain amine.
7. The method for regenerating a resist stripping liquid according to claim 6, characterized in that: the cyclic amine is one or more of aminoethyl piperazine, hydroxyethyl piperazine and aminoethyl morpholine; the chain amine is one or more of ethanolamine, diethanolamine, triethanolamine, diglycolamine, isopropanolamine, methyldiethanolamine and AMP-95.
8. The method for regenerating a resist stripping liquid according to claim 1, characterized in that: the triazole compound.
9. The method for regenerating a resist stripping liquid according to claim 1, characterized in that: the wetting agent is a hydroxyl-containing compound.
10. The method for regenerating a resist stripping liquid according to claim 3, characterized in that: and S3, newly preparing a new stripping liquid, and adding an amide compound or an alcohol ether compound in the preparation process, wherein the mass fraction of the added purified liquid is as follows when the new stripping liquid is newly prepared: 70-95 percent of additive, and the mass fraction of the added additive is as follows: 5% -10%; the mass fractions of the added amide compounds are as follows: 0 to 15 percent; the mass fraction of the added alcohol ether compound is 0-5%.
CN202010088819.3A 2020-02-12 2020-02-12 Regeneration method of photoresist stripping liquid Pending CN111427243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010088819.3A CN111427243A (en) 2020-02-12 2020-02-12 Regeneration method of photoresist stripping liquid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010088819.3A CN111427243A (en) 2020-02-12 2020-02-12 Regeneration method of photoresist stripping liquid

Publications (1)

Publication Number Publication Date
CN111427243A true CN111427243A (en) 2020-07-17

Family

ID=71551577

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010088819.3A Pending CN111427243A (en) 2020-02-12 2020-02-12 Regeneration method of photoresist stripping liquid

Country Status (1)

Country Link
CN (1) CN111427243A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113589661A (en) * 2021-07-29 2021-11-02 江阴江化微电子材料股份有限公司 Photoresist stripping liquid and stripping process
CN115304187A (en) * 2022-08-17 2022-11-08 上海盛剑微电子有限公司 Method for recovering and treating waste stripping solution

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106062638A (en) * 2014-08-20 2016-10-26 株式会社Lg化学 Regeneration method for stripping wastewater for photoresist

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106062638A (en) * 2014-08-20 2016-10-26 株式会社Lg化学 Regeneration method for stripping wastewater for photoresist

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113589661A (en) * 2021-07-29 2021-11-02 江阴江化微电子材料股份有限公司 Photoresist stripping liquid and stripping process
CN113589661B (en) * 2021-07-29 2024-03-08 江阴江化微电子材料股份有限公司 Photoresist stripping liquid and stripping process
CN115304187A (en) * 2022-08-17 2022-11-08 上海盛剑微电子有限公司 Method for recovering and treating waste stripping solution

Similar Documents

Publication Publication Date Title
JP5089808B2 (en) Photoresist stripping composition for manufacturing LCD
KR101710170B1 (en) Recycling process of waste stripper for photoresist
JP2017040928A (en) Photoresist stripping solution composition for lcd production comprising primary alkanolamine
CN111427243A (en) Regeneration method of photoresist stripping liquid
KR101330653B1 (en) Recycling process of waste high boiling point photoresist stripper
CN108926860B (en) Waste stripping liquid regeneration device and application thereof
CN107037698B (en) Photoresist stripping liquid
JP2007241278A (en) Regeneration method and regeneration apparatus for resist stripping waste liquid
CN117518750A (en) Photoresist stripping liquid and preparation method and application thereof
CN102103334B (en) Resist remover composition
KR100992437B1 (en) A recycling method for resist stripper scrapped and arecycling device for same
CN108693718B (en) Resist stripping liquid composition
KR20180033869A (en) Preparation method of stripper for removing photoresist using waste stripper
KR101806941B1 (en) Stripping method of window glass protecting coating layer
CN103773626A (en) Low-etching cleaning solution for removing photoresist etching residues
KR20220167664A (en) METHOD FOR REGENERATING WASTE of PHOTORESIST STRIPPER
CN111187439A (en) Epoxy resin swelling stripping agent and preparation method thereof
JP5094079B2 (en) Resist stripping method
KR102209389B1 (en) Refining process of waste stripper for removing photoresist
TWI785081B (en) Method for reclaiming dimethyl oxide from reclaimed resist stripping agent
KR20200103408A (en) Method for regenerating waste of photoresist stripper
KR20120006469A (en) Composition for removing polymer residue of photosensitive resistive etching film
KR20170002930A (en) Recycling process of waste stripper
JP2000305285A (en) Method for regenerating used resist removing solution
JP2008066573A (en) Method of peeling resist

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination