CN111417248B - 匹配箱的输入端的阻抗调节方法、装置及射频电源*** - Google Patents
匹配箱的输入端的阻抗调节方法、装置及射频电源*** Download PDFInfo
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- CN111417248B CN111417248B CN202010291595.6A CN202010291595A CN111417248B CN 111417248 B CN111417248 B CN 111417248B CN 202010291595 A CN202010291595 A CN 202010291595A CN 111417248 B CN111417248 B CN 111417248B
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000011159 matrix material Substances 0.000 claims description 11
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims description 10
- 238000004590 computer program Methods 0.000 claims description 6
- -1 period Chemical class 0.000 claims 2
- 230000001965 increasing effect Effects 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010291595.6A CN111417248B (zh) | 2020-04-14 | 2020-04-14 | 匹配箱的输入端的阻抗调节方法、装置及射频电源*** |
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CN202010291595.6A CN111417248B (zh) | 2020-04-14 | 2020-04-14 | 匹配箱的输入端的阻抗调节方法、装置及射频电源*** |
Publications (2)
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CN111417248A CN111417248A (zh) | 2020-07-14 |
CN111417248B true CN111417248B (zh) | 2021-12-31 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112014762A (zh) * | 2020-10-21 | 2020-12-01 | 佛仪科技(佛山)有限公司 | 射频电源的阻抗匹配测试方法、装置、介质及测试平台 |
CN113241296B (zh) * | 2021-04-29 | 2024-06-04 | 北京七星华创流量计有限公司 | 射频电源及其阻抗匹配方法、半导体工艺设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5897712A (en) * | 1996-07-16 | 1999-04-27 | Applied Materials, Inc. | Plasma uniformity control for an inductive plasma source |
CN101325837A (zh) * | 2008-06-20 | 2008-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备及其射频匹配网络 |
DE102009054449A1 (de) * | 2009-11-25 | 2011-05-26 | Hüttinger Elektronik Gmbh + Co. Kg | Selbstabgleichende RF-Plasmastromversorgung |
CN102573264A (zh) * | 2011-12-01 | 2012-07-11 | 西安交通大学 | 大气压下开放式单极射频低温等离子体发生装置 |
-
2020
- 2020-04-14 CN CN202010291595.6A patent/CN111417248B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5897712A (en) * | 1996-07-16 | 1999-04-27 | Applied Materials, Inc. | Plasma uniformity control for an inductive plasma source |
CN101325837A (zh) * | 2008-06-20 | 2008-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体处理设备及其射频匹配网络 |
DE102009054449A1 (de) * | 2009-11-25 | 2011-05-26 | Hüttinger Elektronik Gmbh + Co. Kg | Selbstabgleichende RF-Plasmastromversorgung |
CN102573264A (zh) * | 2011-12-01 | 2012-07-11 | 西安交通大学 | 大气压下开放式单极射频低温等离子体发生装置 |
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Effective date of registration: 20211209 Address after: 518000 functional supporting area B, Taohuayuan Zhichuang Town, Tiegang community, Xixiang street, Bao'an District, Shenzhen, Guangdong 101201301 Applicant after: SHENZHEN HENGYUNCHANG VACUUM TECHNOLOGY CO.,LTD. Address before: 518102 zone 2, 10th floor, building F, Xinghui Science Park, Gushu 2nd Road, Xixiang street, Bao'an District, Shenzhen, Guangdong Applicant before: SHENZHEN HENGYUNCHANG VACUUM TECHNOLOGY CO.,LTD. Applicant before: Shenzhen BAISHIDA Semiconductor Equipment Co.,Ltd. |
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Inventor after: Yue Weiping Inventor after: Lin Weiqun Inventor after: Yao Zhiyi Inventor before: Yue Weiping Inventor before: Zhang Guidong Inventor before: Lin Weiqun Inventor before: Yao Zhiyi |
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Address after: 518102 Room 101, 201, 301, Building B, Functional Support Area, Taohuayuan Zhichuang Town, Tiegang Community, Xixiang Street, Baoan District, Shenzhen, Guangdong Province Patentee after: Shenzhen Hengyunchang Vacuum Technology Co.,Ltd. Address before: 518000 functional supporting area B, Taohuayuan Zhichuang Town, Tiegang community, Xixiang street, Bao'an District, Shenzhen, Guangdong 101201301 Patentee before: SHENZHEN HENGYUNCHANG VACUUM TECHNOLOGY CO.,LTD. |
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