CN111415902B - Metal nano structure, manufacturing method thereof, electronic device and electronic equipment - Google Patents
Metal nano structure, manufacturing method thereof, electronic device and electronic equipment Download PDFInfo
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- CN111415902B CN111415902B CN202010147555.4A CN202010147555A CN111415902B CN 111415902 B CN111415902 B CN 111415902B CN 202010147555 A CN202010147555 A CN 202010147555A CN 111415902 B CN111415902 B CN 111415902B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1094—Conducting structures comprising nanotubes or nanowires
Abstract
The invention discloses a metal nano structure, a manufacturing method thereof, an electronic device and electronic equipment, and relates to the technical field of nano structure manufacturing, so as to effectively solve the problem that a conventional patterning process is not suitable for manufacturing a metal nano structure. The manufacturing method of the metal nano structure comprises the steps of providing a substrate; forming a patterned nanostructure on a substrate; a metal nanostructure is formed on a surface of the patterned nanostructure facing away from the substrate. The metal nano structure is manufactured by adopting the manufacturing method provided by the invention, and the metal nano structure provided by the invention is applied to electronic devices and electronic equipment.
Description
Technical Field
The present invention relates to the field of nanostructure manufacturing technologies, and in particular, to a metal nanostructure, a manufacturing method thereof, an electronic device, and an electronic apparatus.
Background
The nanostructure is made of a nanomaterial with at least one dimension defined below 100 nanometers, including nanowires, nanorods, nanotubes, nanobelts, nanoplatelets, etc.
The metal nano structure has the advantages of high mechanical strength, good conductivity and large specific surface area, and has wide application prospect in various aspects.
When manufacturing a metal nano structure applied to an electronic device based on a metal nano wire material, the conventional patterning process is not suitable for manufacturing the metal nano structure any more because the metal nano wire material is very difficult to etch, so that a manufacturing method suitable for the metal nano structure is needed to be provided.
Disclosure of Invention
The invention aims to provide a metal nano structure, a manufacturing method thereof, an electronic device and electronic equipment, so that the metal nano structure is directly formed on the surface of the patterned nano structure under the shielding of the patterned nano structure, and the metal nano structure can be directly manufactured without patterning by one-time film forming, thereby effectively solving the problem that the conventional patterning technology is not suitable for manufacturing the metal nano structure.
In order to achieve the above object, the present invention provides a method for manufacturing a metal nanostructure, comprising:
providing a substrate;
forming a patterned nanostructure on a substrate;
a metal nanostructure is formed on a surface of the patterned nanostructure facing away from the substrate.
Preferably, forming patterned nanostructures on a substrate comprises:
forming a plurality of grooves and a patterned mask layer covering the grooves on a substrate; the patterning mask layer is provided with a plurality of hollowed-out parts which are in one-to-one correspondence with the plurality of groove bodies.
Preferably, forming a plurality of trenches and a patterned mask layer covering the plurality of trenches on a substrate includes:
forming a patterned mask layer on the surface of the substrate;
a plurality of trenches are formed in the substrate using the patterned mask layer.
Preferably, the orthographic projection of each hollowed-out part on the layer where the bottom of the groove body is located in the bottom of the groove body or coincides with the bottom of the groove body.
Preferably, the patterned mask layer further comprises a plurality of shielding parts; when forming the plurality of grooves and the patterned mask layer covering the plurality of grooves on the substrate, forming the plurality of grooves and the patterned mask layer covering the plurality of grooves on the substrate further comprises:
forming a plurality of protrusions corresponding to the shielding parts one by one on the substrate; the adjacent two groove bodies are provided with inner walls extending towards the bulges.
Preferably, two adjacent tanks communicate with each other.
Preferably, patterning the mask layer includes:
a first support portion;
a second supporting part which is arranged at intervals with the first supporting part and is opposite to the first supporting part;
and at least one load beam disposed between the first support portion and the second support portion.
Preferably, when the patterned nanostructure forms a metal nanostructure on a surface facing away from the substrate, the method further comprises:
forming a bottom metal layer on the surface of the substrate, wherein orthographic projection of the metal nano structure on the layer surface where the bottom metal layer is positioned is independent of the bottom metal layer;
and/or the number of the groups of groups,
the material of the patterned nano structure comprises any one of silicon nitride, silicon carbide, silicon oxide and silicon oxynitride;
and/or the number of the groups of groups,
the material of the metal nano structure comprises any one of ruthenium, cobalt and molybdenum.
Compared with the prior art, the method for manufacturing the metal nanostructure provided by the invention has the advantages that the patterned nanostructure is formed on the substrate, so that when the patterned nanostructure is formed on the surface of the patterned nanostructure, which is far away from the substrate, the patterned nanostructure can be used as a shielding layer, and the metal nanostructure consistent with the patterned nanostructure can be formed on the surface of the patterned nanostructure, which is far away from the substrate, without patterning the metal nanostructure material layer during one film forming. Therefore, the manufacturing method of the metal nano structure provided by the invention does not need to pattern the metal nano material layer which is extremely difficult to etch, and can effectively solve the problem that the conventional patterning technology is not suitable for manufacturing the metal nano structure.
The invention also provides a metal nano structure which is manufactured by adopting the manufacturing method of the metal nano structure.
Compared with the prior art, the metal nano structure manufactured by the manufacturing method of the metal nano structure has the same beneficial effects as the manufacturing method, and the description is omitted.
The invention also provides an electronic device comprising the metal nanostructure provided by the invention.
Compared with the prior art, the electronic device comprising the metal nanostructure provided by the invention has the same beneficial effects as the manufacturing method of the metal nanostructure provided by the invention, and the details are not repeated here.
The invention also provides electronic equipment, which comprises the metal nano structure provided by the invention.
Compared with the prior art, the electronic equipment comprising the metal nanostructure provided by the invention has the same beneficial effects as the manufacturing method of the metal nanostructure provided by the invention, and the details are not repeated here.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a flow chart of a method for fabricating a metal nanostructure according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a patterned nanostructure provided by an embodiment of the present invention;
FIG. 3 is a cross-sectional view of the front view of FIG. 2;
FIG. 4 is a cross-sectional view taken from the left in FIG. 2;
FIG. 5 is a schematic top view of a metal nanostructure provided by an embodiment of the present invention;
FIG. 6 is a cross-sectional view in the front view of FIG. 5;
FIG. 7 is a cross-sectional view in the left-hand direction of FIG. 5;
FIG. 8 is a cross-section of a second patterned nanostructure in a front view provided by an embodiment of the present invention;
FIG. 9 is a cross-section of a third patterned nanostructure in a front view, provided by an embodiment of the present invention;
FIG. 10 is a schematic diagram of a metal nanostructure corresponding to a third patterned nanostructure according to an embodiment of the present invention;
FIG. 11 is a cross-section of a fourth patterned nanostructure in a front view provided by an embodiment of the present invention;
FIG. 12 is a schematic illustration of a fourth patterned-nanostructure corresponding metal nanostructure;
FIG. 13 is a schematic diagram of a structure for forming a mask material layer on a substrate according to an embodiment of the present invention;
FIG. 14 is a schematic view of a structure after forming a boss on a substrate according to an embodiment of the present invention;
FIG. 15 is a schematic top view of a patterned photoresist provided according to an embodiment of the present invention;
FIG. 16 is a cross-sectional view of FIG. 15 in the front view;
FIG. 17 is a schematic diagram of a patterned mask layer according to an embodiment of the present invention;
fig. 18 is a schematic diagram of a structure after removing patterned photoresist according to an embodiment of the present invention.
The patterning device comprises a substrate 10, a groove body 100, a protrusion 101, a boss 11, a patterning nano structure 110, a patterning mask layer 1100, a hollowed-out part 1101, a shielding part 1102, a mask material layer 1103, a first supporting part 1104, a second supporting part 1105, a bearing beam 12, a metal nano structure 120, a first metal nano structure 121, a second metal nano structure 122, a third metal nano structure 13, a bottom metal layer 14 and patterning photoresist.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
Various illustrative drawings of embodiments of the invention are shown in the drawings, which are not drawn to scale. In which some details are exaggerated and possibly omitted for clarity. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
Hereinafter, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may include one or more of the feature, either explicitly or implicitly. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
Furthermore, in the present invention, the terms "upper," "lower," and the like, are defined with respect to the orientation of the components shown in the drawings, and it should be understood that these directional terms are relative terms, which are used for relative description and clarity, and may be correspondingly varied according to the orientation of the components shown in the drawings.
In the present invention, unless explicitly specified and limited otherwise, the term "connected" is to be construed broadly, and for example, "connected" may be either fixedly connected, detachably connected, or integrally formed; may be directly connected or indirectly connected through an intermediate medium.
The application of metal nanowire materials including, but not limited to, ruthenium (Ru), cobalt (Co), molybdenum (Mo), etc., in advanced interconnect processes for integrated circuits is a hot spot of current research. The method for forming the metal nano structure by the metal nano wire material comprises a metal stripping process, a side wall transfer process, a Damascus process and the like.
The metal stripping process is suitable for a metal nanowire material layer with a smooth surface, but is not suitable for a metal nanowire material layer with a stepped surface. In addition, the metal lift-off process has a problem of impurity residue, which may degrade the performance of an electronic device employing the metal nanostructure.
The cross section shape of the metal nano structure formed by the side wall transfer process is uncontrollable, and the problems of plasma damage and the like are also caused.
The Damascus process can overcome the problems of the metal stripping process, but has the problem of complex process.
From the above, although the method for manufacturing the metal nanostructure appears in the prior art, the method is not suitable for manufacturing the metal nanostructure due to the problems of impurity pollution, uncontrollable morphology, complex process and the like.
In view of the above problems, the present invention provides a method for manufacturing a metal nanostructure, and fig. 1 is a flowchart of a method for manufacturing a metal nanostructure according to an embodiment of the present invention. As shown in fig. 1, the method for manufacturing the metal nanostructure includes:
s10: referring specifically to fig. 2, a substrate 10 is provided. The substrate 10 may be, for example, a bulk Silicon substrate, a Silicon-On-Insulator (abbreviated as SOI) substrate, a Germanium-On-Insulator (abbreviated as GOI) substrate, a Silicon Germanium substrate, a group III-V compound semiconductor substrate, or an epitaxial thin film substrate obtained by performing selective epitaxial growth (Selective epitaxial growth, abbreviated as SEG), although not limited thereto.
S11: referring specifically to fig. 2-4, patterned nanostructures 11 are formed on a substrate 10. Patterned nanostructure 11 may be considered a mask for subsequent formation of metal nanostructure 12 or a patterned template for automated patterning of metal nanostructure 12. The specific structure of the patterned nanostructure 11 depends on the specific structure of the metal nanostructure 12 required for the actual working conditions, and is not specifically limited herein.
To facilitate the formation of patterned nanostructures 11 on substrate 10 using conventional patterning processes, such as photolithographic etching processes, patterned nanostructures 11 are preferably of a material that is easy to form on substrate 10 and to implement conventional patterning processes. For example: any of silicon nitride, silicon carbide, silicon oxide, and silicon oxynitride is, of course, not limited thereto.
S12: referring specifically to fig. 5-7, metal nanostructures 12 are formed on the surface of patterned nanostructures 11 facing away from substrate 10. The specific structure of the metal nanostructure 12 corresponds to the specific structure of the patterned nanostructure 11 as a mask or patterned template. The metal nanostructures 12 are preferably made of a material that has a high current carrying capacity and a low contact resistance with the patterned nanostructures 11, for example: ruthenium, cobalt, molybdenum, or the like, but is not limited thereto.
After the patterned nano-structure 11 is formed, the patterned nano-structure is used as a mask or a patterned template for forming the metal nano-structure 12 later. On this basis, the metal nanostructure 12 can be formed in conformity with the patterned nanostructure 11. In view of the fact that the material for forming the metal nano structure 12 is less prone to implementing a conventional patterning process than the material for forming the patterned nano structure 11, the method for manufacturing the metal nano structure provided by the embodiment of the invention can directly form the metal nano structure 12 by forming a film once without a patterning process, and can effectively solve the problem that the conventional patterning process is not suitable for forming the metal nano structure 12.
As one possible implementation, with continued reference to fig. 2-4, forming patterned nanostructures 11 on a substrate 10 includes:
a plurality of trenches 100 are formed on the substrate 10 and a patterned mask layer 110 covering the plurality of trenches 100. The patterned mask layer 110 has a plurality of hollowed-out portions 1100 corresponding to the plurality of grooves 100 one by one.
Here, the one-to-one correspondence between the plurality of slots 100 and the plurality of hollowed-out portions 1100 means that the plurality of slots 100 and the plurality of hollowed-out portions 1100 are in one-to-one correspondence from a spatially corresponding angle.
When the patterned nano structure 11 is formed with a plurality of grooves 100 and a patterned mask layer 110 covering the grooves 100, and the patterned mask layer 110 has a plurality of hollowed-out portions 1100 corresponding to the grooves 100, a metal film layer is formed on the surface of the patterned mask layer 110 facing away from the substrate 10 by adopting a one-time film forming process, and meanwhile, since the patterned mask layer 110 has a plurality of hollowed-out portions 1100 corresponding to the grooves 100, the metal film layer is automatically patterned through the hollowed-out portions 1100 in the one-time film forming process, so that the metal nano structure 12 is formed on the surface of the patterned mask layer 110 facing away from the substrate 10 in the area where the hollowed-out portions 1100 do not exist. The metal film layer corresponds to the regions of the plurality of hollowed-out portions 1100, and is automatically located in the plurality of grooves 100 corresponding to the plurality of hollowed-out portions 1100, and in the region of the substrate 10 not covered by the patterned mask layer 110.
As an example, referring specifically to fig. 3, the orthographic projection of the hollowed-out portion 1100 on the level where the bottom of the groove body 100 is located in the bottom of the groove body 100 or coincides with the bottom of the groove body 100. It should be understood that the cross-sectional shapes of the groove body 100 and the hollowed-out portion 1100 are not particularly limited herein.
Referring to fig. 3, for the patterned mask layer 110, a plurality of shielding portions 1101 are included in addition to the plurality of hollowed-out portions 1100. At this time, when forming the plurality of grooves 100 and the patterned mask layer 110 covering the plurality of grooves 100 on the substrate 10, forming the plurality of grooves 100 and the patterned mask layer 110 covering the plurality of grooves 100 on the substrate 10 further includes: a plurality of protrusions 101 (see specifically fig. 8) are formed on the substrate 10 in one-to-one correspondence with the plurality of shielding portions 1101, where one-to-one correspondence of the plurality of shielding portions 1101 with the plurality of protrusions 101 means that the plurality of shielding portions 1101 are in one-to-one correspondence with the plurality of protrusions 101 from a spatially corresponding angle.
As an example, referring specifically to fig. 9, two adjacent grooves 100 have inner walls extending toward the protrusions 101, the inner walls being perpendicular to the substrate 10. In other words, the orthographic projection of the hollowed-out portion 1100 on the level where the groove bottom of the groove body 100 is located in the groove bottom of the groove body 100, that is, the orthographic projection of the shielding portion 1101 corresponding to the protrusion 101 located between the adjacent two groove bodies 100 on the level where the protrusion 101 is located covers the protrusion 101. I.e. the shielding portion 1101 and the protrusions 101 corresponding thereto form a near T-shaped structure. Referring specifically to fig. 10, when the metal nanostructure 12 is formed by a one-time film forming process, the near T-shaped structure enables the metal nanostructure 12 formed on the shielding portion 1101 and the metal film layer formed on the area of the substrate 10 not covered by the shielding portion 1101 to be completely and naturally isolated. That is, since the protrusions 101 extend inward, a metal film layer is not formed on the sidewalls of the protrusions 101, thereby achieving the purpose of complete natural isolation. When the metal nano structure with the structure is applied to an electronic device, the performance of the electronic device can be further improved.
It should be appreciated that when the above-mentioned protrusion 101 is relatively high, a metal film layer is formed on the surface of the patterned mask layer 110 facing away from the substrate 10 by using a single film forming process, the metal film layer may be relatively easily patterned into the metal nanostructure 12 by magnetron sputtering.
As another example, referring specifically to fig. 11, two adjacent grooves 100 have inner walls recessed toward the protrusions 101. Referring specifically to fig. 12, since the adjacent two grooves 100 have inner walls recessed toward the protrusions 101, when the metal nanostructures 12 are formed by one film formation process, the protrusions 101 have recessed portions that enable the metal nanostructures 12 formed on the shielding portion 1101 to be completely and naturally isolated from the metal film layer formed on the area of the substrate 10 not covered by the shielding portion 1101. When the metal nano structure with the structure is applied to an electronic device, the performance of the electronic device can be further improved.
As a third example, referring specifically to fig. 3, the protrusion 101 located between two adjacent grooves 100 is completely removed, and the shielding portion 1101 corresponding to the position where the protrusion 101 is removed is in a suspended state. Referring specifically to fig. 6, there is no solid structure that can carry a metal layer between the metal nanostructure 12 formed in the shielding portion 1101 and the metal film layer formed in the region of the substrate 10 not covered by the shielding portion 1101, so that a completely natural isolation between the surface metal nanostructure 12 and the bottom metal film layer 13 can be completely ensured. When the metal nano structure with the structure is applied to an electronic device, the performance of the electronic device can be further improved.
As another possible implementation, with continued reference to fig. 2-4, patterning mask layer 110 includes: the first support 1103. A second supporting portion 1104 provided to be spaced apart from and opposed to the first supporting portion 1103; and at least one load beam 1105 disposed between the first support portion 1103 and the second support portion 1104. In this case, the first support portion 1103, the second support portion 1104, and at least one carrier beam 1105 constitute a plurality of shielding portions 1101, and the first support portion 1103, the second support portion 1104, and the carrier beam 1105 enclose a plurality of hollowed-out portions 1100. At this time, referring to fig. 5, the metal nanostructure 12 formed on the surface of the patterned nanostructure 11 facing away from the substrate 10 includes a first metal nanostructure 120 formed on the surface of the first support 1103 facing away from the substrate 10, a second metal nanostructure 121 formed on the surface of the second support 1104 facing away from the substrate 10, and a third metal nanostructure 122 formed on the surface of the carrier beam 1105 facing away from the substrate 10. The third metal nanostructure 122 is a nanowire, a nanosheet, etc., and the first metal nanostructure 120 and the second metal nanostructure 121 may be used as pads, and in practical application, the electrical conductivity of the third metal nanostructure 122 serving as a nanowire or a nanosheet may be directly measured by electrically connecting the first metal nanostructure 120 and the second metal nanostructure 121.
It should be noted that, the size of the third metal nanostructure 122 as a nanowire or a nanosheet may be controlled by controlling the size of the carrier beam 1105, and the size of the carrier beam 1105 may be flexibly controlled by a conventional patterning process, so the third metal nanostructure 122 in this embodiment has an advantage of flexible control of the size.
As a possible implementation manner, as shown in fig. 5 to 7, 10 and 12, when the patterned nanostructure 11 faces away from the surface of the substrate 10 to form the metal nanostructure 12, the method for manufacturing the metal nanostructure further includes:
a bottom metal layer 13 is formed on the surface of the substrate 10, and the orthographic projection of the metal nanostructure 12 on the layer surface where the bottom metal layer 13 is located is independent of the bottom metal layer 13.
For example: after forming the plurality of grooves 100 on the substrate 10 using the patterned mask layer 110, if the metal nanostructures 12 are formed on the surface of the patterned nanostructures 11 facing away from the substrate 10, the metal nanostructures 12 are substantially formed on the surface of the patterned mask layer 110 facing away from the substrate 10, where the shielding portion 1101 is formed. Meanwhile, under the shielding of the shielding portion 1101, a bottom metal layer 13 is formed at the bottom of the trench 100 and at an area of the substrate 10 not covered by the shielding portion 1101.
Also for example: when the substrate 10 has a higher bump, the vertical distance between the metal nanostructure 12 and the bottom metal layer 13 is higher, and the isolation between the metal nanostructure 12 and the bottom metal layer 13 is better. Accordingly, the better the performance of the electronic device having the metal nanostructures 12.
These partial areas of the metal film layer corresponding to the hollowed-out portions 1100 may form a bottom metal layer 13 in the area of the substrate 10 not covered by the patterned nano-mask layer 110.
The plurality of grooves 100 formed on the substrate 10 can increase the vertical distance between the metal nanostructure 12 and the bottom metal layer 13 to ensure the isolation of the metal nanostructure 12 and the bottom metal layer 13, so that an electronic device using the metal nanostructure 12 has good performance.
The method of forming patterned nanostructures 11 on a substrate 10 and forming metal nanostructures 12 on a surface of the patterned nanostructures 11 facing away from the substrate 10 will be described in detail below with reference to the drawings, it being understood that the following description is for illustration only and not for limitation.
S20: referring specifically to fig. 13, a masking material layer 1102 is formed on the surface of the substrate 10 using a conventional film formation process, such as low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, abbreviated as LPCVD). It should be noted that, in order to reduce the internal stress of the mask material layer 1102, the mask material layer 1102 is formed and then subjected to a high temperature annealing treatment, and a specific method of the high temperature annealing treatment is not limited.
S21: referring specifically to fig. 14, patterned masking material layer 1102 and substrate 10 form lands 102. The lands 102 are the areas where the patterned nanostructures 11 are formed in this embodiment. The patterned masking material layer 1102 and the substrate 10 may be processed using a conventional photolithographic etching process to form the mesa 102 comprising a portion of the masking material layer 1102 and a portion of the substrate 10.
S22: referring specifically to fig. 15 and 16, patterned photoresist 14 is formed on the surface of mesa 102 facing away from substrate 10. A layer of photoresist may be formed on the surface of the mesa 102 facing away from the substrate 10, and the patterned photoresist 14 may be formed based on the layer of photoresist. The specific structure of patterned photoresist 14 determines the specific structure of patterned masking layer 110, patterned nanostructure 11, and metal nanostructure 12 that will be subsequently formed.
Referring specifically to fig. 17, the patterned photoresist 14 is used as a mask to remove the patterned mask material layer 1102 on the boss 102 to form the patterned mask layer 110, and an exemplary specific structure of the patterned mask layer 110 is referred to as the specific structure of the patterned mask layer 110 described above, which is not described herein.
S24: referring specifically to fig. 18, patterned photoresist 14 is removed.
S25: referring specifically to fig. 8, the substrate 10 in the region of the boss 102 is etched downward using the patterned mask layer 110 as a mask to form the trench body 100, and the boss 102 region blocked by the patterned mask layer 110 forms the protrusion 101.
S26: referring specifically to fig. 3, 9 and 11, the protrusions 101 between two adjacent grooves 100 are etched by an anisotropic etching method, and the amount of the protrusions 101 to be etched may be determined according to specific conditions, which is not particularly limited herein. For example: the protrusions 101 between two adjacent grooves 100 may be etched completely, or a certain amount of protrusions 101 may be etched, so that the orthographic projection of the finally formed protrusions 101 on the surface of the substrate 10 is completely covered by the orthographic projection of the shielding portion 1101 of the patterned mask layer 110 corresponding thereto on the surface of the substrate 10.
S27: referring specifically to fig. 5 to 7, 10 and 12, a metallization process is used to form metal nanostructures 12 on the surface of the shielding portion 1101 facing away from the substrate 10, and at the same time, a bottom metal layer 13 is formed at the bottom of the trench 100 and in the area of the substrate 10 not covered by the patterned mask layer 110. An exemplary specific structure of the formed metal nanostructures 12 is referred to above and the specific structure of the metal nanostructures 12 is not described herein.
The embodiment of the invention also provides a metal nano structure. The metal nano structure is manufactured by adopting the manufacturing method of the metal nano structure provided by the embodiment of the invention.
The metal nanostructure manufactured by the manufacturing method of the metal nanostructure provided by the embodiment of the invention has the same beneficial effects as the manufacturing method, and is not repeated here.
The embodiment of the invention also provides an electronic device. The electronic device at least comprises the metal nano structure manufactured by the embodiment. For example: the electronic device may be a gate-all-around transistor or the like. As for the beneficial effects of the electronic device, reference may be made to the beneficial effects of the foregoing method for manufacturing a metal nanostructure, which will not be described herein.
The embodiment of the invention also provides an integrated circuit. The integrated circuit comprises at least the metal nano-structure provided by the embodiment. As for the beneficial effects of the integrated circuit, reference may be made to the beneficial effects of the foregoing method for manufacturing a metal nanostructure, which are not described herein again.
The embodiment of the invention also provides a chip. The chip comprises the metal nano structure provided by the embodiment. As for the beneficial effects of the chip, reference may be made to the beneficial effects of the foregoing method for manufacturing a metal nanostructure, which will not be described herein.
The embodiment of the invention also provides electronic equipment, which comprises the metal nano structure provided by the embodiment. As for the beneficial effects of the electronic device, reference may be made to the beneficial effects of the foregoing method for manufacturing a metal nanostructure, which will not be described herein.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for the apparatus embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments for relevant points.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (11)
1. A method of fabricating a metal nanostructure, comprising:
providing a substrate;
forming patterned nanostructures on the substrate; the patterning nano structure is provided with a plurality of groove bodies and a patterning mask layer covering the groove bodies; the patterning mask layer is provided with a plurality of hollowed-out parts which are in one-to-one correspondence with the plurality of groove bodies;
forming patterned nanostructures on the substrate, comprising:
forming a patterned mask layer on the surface of the substrate; forming the plurality of grooves on the substrate by using the patterned mask layer; the orthographic projection of the hollowed-out part on the layer surface of the tank bottom of the tank body is positioned in the tank body of the tank body or is overlapped with the tank bottom of the tank body; the patterning mask layer comprises a plurality of shielding parts;
forming a plurality of protrusions corresponding to the shielding parts one by one on the substrate, wherein two adjacent groove bodies are provided with inner walls extending towards the protrusions;
and forming a metal nano structure on the surface of the patterned nano structure, which is away from the substrate.
2. The method of claim 1, wherein forming patterned nanostructures on the substrate comprises:
forming a plurality of grooves on the substrate and a patterned mask layer covering the plurality of grooves; the patterning mask layer is provided with a plurality of hollowed-out parts corresponding to the plurality of groove bodies one by one.
3. The method of fabricating a metal nanostructure according to claim 2, wherein forming a plurality of trenches and a patterned mask layer covering the plurality of trenches on the substrate comprises:
forming the patterned mask layer on the surface of the substrate;
and forming the plurality of grooves on the substrate by using the patterned mask layer.
4. The method for manufacturing a metal nanostructure according to claim 2, wherein the orthographic projection of each hollowed-out portion on the layer where the bottom of the groove is located in the bottom of the groove or coincides with the bottom of the groove.
5. The method of claim 2, wherein the patterned mask layer further comprises a plurality of shielding portions; when forming a plurality of grooves and a patterned mask layer covering the plurality of grooves on the substrate, forming the plurality of grooves and the patterned mask layer covering the plurality of grooves on the substrate further comprises:
forming a plurality of protrusions corresponding to the shielding parts one by one on the substrate; two adjacent groove bodies are provided with inner walls extending towards the protrusions.
6. The method of claim 2, wherein two adjacent grooves are in communication with each other.
7. The method of claim 2, wherein the patterning mask layer comprises:
a first support portion;
a second supporting part which is arranged at intervals with the first supporting part and is opposite to the first supporting part;
and at least one load beam disposed between the first and second support portions.
8. The method of any one of claims 1 to 7, further comprising, when the patterned nanostructure is formed on a surface facing away from the substrate:
forming a bottom metal layer on the surface of the substrate, wherein orthographic projection of the metal nano structure on the layer surface where the bottom metal layer is located is independent of the bottom metal layer;
and/or the number of the groups of groups,
the material of the patterned nano structure is any one of silicon nitride, silicon carbide, silicon oxide and silicon oxynitride;
and/or the number of the groups of groups,
the material of the metal nano structure is any one of ruthenium, cobalt and molybdenum.
9. A metal nanostructure, characterized in that the metal nanostructure is produced by the method of producing a metal nanostructure according to any one of claims 1 to 8.
10. An electronic device comprising the metal nanostructure of claim 9.
11. An electronic device comprising the metal nanostructure of claim 9.
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