CN111402739B - Display module and preparation method thereof - Google Patents
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- CN111402739B CN111402739B CN202010245884.2A CN202010245884A CN111402739B CN 111402739 B CN111402739 B CN 111402739B CN 202010245884 A CN202010245884 A CN 202010245884A CN 111402739 B CN111402739 B CN 111402739B
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Abstract
The invention discloses a display module and a preparation method of the display module. Wherein, display module has the hole area of digging that is used for setting up device under the screen, display module includes: a display panel including a display surface; the light shielding layer is positioned on one side, far away from the display surface, of the display panel, and an orthographic projection area on the display panel is overlapped with an orthographic projection area of the hole digging area on the display panel. The invention improves the mura phenomenon.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display module and a preparation method of the display module.
Background
With the development of full-screen, the design of devices under the screen, such as fingerprints under the screen, cameras under the screen, and the like, becomes a research hotspot. However, when a display screen having an off-screen device displays a screen, a mura phenomenon, which is a problem of poor luminance uniformity, generally occurs.
Disclosure of Invention
In view of the above, the present invention provides a display module and a method for manufacturing the same to improve the mura phenomenon.
In order to achieve the purpose, the invention adopts the following technical scheme:
in one aspect, an embodiment of the present invention provides a display module having a hole digging region for disposing an off-screen device, where the display module includes:
a display panel including a display surface;
the light shielding layer is positioned on one side, far away from the display surface, of the display panel, and an orthographic projection area on the display panel is overlapped with an orthographic projection area of the hole digging area on the display panel.
Optionally, an orthographic projection area of the light shielding layer on the display panel coincides with an orthographic projection area of the excavated area on the display panel, or the orthographic projection area of the excavated area on the display panel is located within the orthographic projection area of the light shielding layer on the display panel. Therefore, all light irradiated to the hole digging area can be shielded, and the mura phenomenon is improved better.
Optionally, the display module further includes a protection layer located on a side of the display panel far away from the display surface, and the protection layer includes an opening, where the opening defines the hole digging region. The protective layer is arranged to define a hole digging area through the design opening on one hand and protect the screen body (display panel) on the other hand. Optionally, the light shielding layer is attached to the protective layer and/or the display panel, and various embodiments of the light shielding layer are provided and may be set according to actual situations.
Optionally, the light shielding layer is attached to the protective layer and/or the display panel. Various embodiments of light-shielding layers are provided.
Optionally, the light shielding layer comprises a black light shielding layer or an antireflection film; preferably, the black light-shielding layer is a black light-shielding tape. The black light-shielding layer can absorb light, and light reaching the light-shielding layer can be effectively prevented from irradiating the thin film transistor through transmission or reflection. The black shading adhesive tape can be convenient for tearing off the shading layer when subsequently assembling the device under the screen. The antireflection film can reduce the reflectivity or increase the transmittance of light, and can reduce the reflection of light emitted from the display surface direction of the display panel at the interface of the display panel located in the hole digging region.
Optionally, the antireflection film is an ultraviolet band antireflection film; preferably, the ultraviolet light waveband antireflection film is an ultra-low antireflection nano optical film. The ultraviolet wave band antireflection film can reduce the reflection of the interface surface of the display panel positioned in the hole digging area to ultraviolet rays, thereby effectively avoiding the influence of the ultraviolet rays on the thin film transistor and improving the mura phenomenon.
Optionally, at least one black light-shielding layer is attached to the protective layer, and at least one antireflection film is attached to the display panel. The black shading layer and the antireflection film of at least one layer are respectively attached to the protective layer and the display panel, so that a more excellent effect can be achieved.
On the other hand, the embodiment of the invention provides a preparation method of a display module, wherein the display module is provided with a hole digging region for arranging an off-screen device, and the preparation method of the display module comprises the following steps:
preparing a display panel, wherein the display panel comprises a display surface;
at least one light shielding layer is arranged on one side of the display panel far away from the display surface, wherein the orthographic projection area of the light shielding layer on the display panel is overlapped with the orthographic projection area of the dug hole area on the display panel. The preparation method of the display module improves the mura phenomenon and improves the product yield.
Optionally, preparing the display panel comprises:
preparing an array substrate;
preparing a light emitting device on one side of the array substrate;
coating ultraviolet curing glue on one side of the light-emitting device, which is far away from the array substrate;
attaching a cover plate to the light-emitting device through the ultraviolet curing adhesive;
curing the ultraviolet curing glue by adopting ultraviolet rays;
at least one layer of light shielding layer is arranged on one side of the display panel far away from the display surface, and the step of curing the ultraviolet curing glue by adopting ultraviolet rays is executed before;
preferably, the energy of the ultraviolet light is 2600 to 3500 m coke. The energy of ultraviolet rays is reduced, the influence on the thin film transistor can be further reduced, and the product yield is improved.
Optionally, after the step of curing the ultraviolet curing glue by using ultraviolet light, the method further includes:
and carrying out high-temperature static repair on the display module, wherein the temperature of the high-temperature static repair is lower than 80 ℃. And the high-temperature static repair can disperse photon-generated carriers concentrated in the thin film transistor, thereby further reducing the influence on the thin film transistor.
Preferably, after the step of performing high-temperature static repair on the display module, the method further includes:
a process wait, the process wait time governed by greater than or equal to 2 hours. In a semiconductor manufacturing process, the process latency affects the yield of the product, and therefore, by properly controlling the process latency, the yield of the product can be improved.
The invention has the beneficial effects that: according to the embodiment of the invention, at least one layer of light shielding layer is arranged on one side of the display panel far away from the display surface, and the orthographic projection area of the light shielding layer on the display panel is overlapped with the orthographic projection area of the dug hole area for arranging the under-screen device on the display panel, so that light transmitted to the display panel from the dug hole area and reaching the thin film transistor is reduced, and/or light reflected to the thin film transistor from the interface of the display panel positioned in the dug hole area is reduced, further the influence of strong light on the thin film transistor is reduced, the thin film transistor normally works, the correspondingly connected light-emitting device can reach or approach the expected light-emitting brightness, the mura phenomenon is improved, and the product yield is improved.
Drawings
The above and other features and advantages of the present invention will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the attached drawings, in which:
fig. 1 is a schematic structural diagram of a display module according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another display module according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another display module according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another display module according to an embodiment of the present invention;
fig. 5 is a flowchart of a method for manufacturing a display module according to an embodiment of the invention.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As described in the background art, the related art display screen has a mura phenomenon. The inventor finds that, in the manufacturing process of the display module, the excavated area for disposing the underscreen device is exposed to strong light (such as external light, light emitted by the light-emitting device in the display panel, ultraviolet light in the screen body/module bonding process, and the like), and a part of the semiconductor film layer (such as an active layer/channel layer in the thin film transistor) of the display panel corresponding to the excavated area generates a photo-generated carrier under the irradiation of the strong light, so that the characteristics of the thin film transistor are shifted, and the light-emitting device correspondingly connected cannot reach the expected light-emitting brightness, so that a mura phenomenon occurs.
Based on the above technical problem, the present embodiment provides the following solutions:
fig. 1 is a schematic structural diagram of a display module according to an embodiment of the present invention. The display module can be applied to a display device with an off-screen device (such as an off-screen fingerprint, an off-screen camera and the like), and can improve the mura phenomenon of the display device. As shown in fig. 1, a display module provided in an embodiment of the present invention has a hole digging area a for disposing an off-screen device, and the display module includes:
a display panel 1 including a display surface;
and the at least one light shielding layer 2 is positioned on one side of the display panel 1 far away from the display surface, and an orthographic projection area B on the display panel 1 is overlapped with an orthographic projection area of the hole digging area A on the display panel 1. The display module provided by the embodiment comprises at least one light shielding layer 2, wherein the number of the light shielding layer 2 can be one layer, two layers, five layers and the like, and the display module can be arranged according to actual conditions.
In the present embodiment, the light-shielding layer 2 is specifically described as an example.
The display panel 1 may include an array substrate and a light emitting device 20 on the array substrate, the array substrate includes a pixel circuit for driving the light emitting device 20 to emit light, the pixel circuit includes a thin film transistor 10, and a source/drain of the thin film transistor 10 is electrically connected to the light emitting device 20. The light shielding layer 2 is used to shield light reaching the cutout region a and prevent the shielded light from being irradiated onto the thin film transistor 10 in the display panel 1. The light-shielding layer 2 may have different light-shielding structures depending on the situation. For example, for the case of reducing the transmission of light while reducing the reflection of light, the light shielding layer 2 may select a light absorbing structure; for the case where only the transmission of light needs to be reduced, the light-shielding layer 2 may be a high-reflection structure or a total-reflection structure; for the case that only the reflection of light needs to be reduced, the light shielding layer 2 may be an anti-reflection structure or an anti-reflection structure; for the case where it is necessary to reduce the reflection of light in a certain wavelength band, the light shielding layer 2 may select an antireflection structure corresponding to the wavelength band.
In this embodiment, the orthographic projection area B of the light shielding layer 2 on the display panel 1 overlaps with the orthographic projection area of the dug hole area a on the display panel 1, that is, the light shielding layer 2 can shield a part or all of the dug hole area a, so that a part or all of light reaching the dug hole area a is shielded by the light shielding layer 2, and light reaching the thin film transistor 10 is reduced.
Fig. 1 schematically shows a structure of a display module that can be implemented. As shown in fig. 1, the light shielding layer 2 is not in contact with the display panel 1, and since there is a gap between the display panel 1 and the light shielding layer 2, the light shielding layer 2 does not affect the reflection of the light emitted from the light emitting device 20 at the interface of the display panel 1 located in the excavated area a. At this moment, can be for the extinction structure with light shield layer 2, be absorbed by light shield layer 2 when external light reachs light shield layer 2 to can prevent that external light from entering into display panel 1 by display module's the back through digging hole district A, avoided external light to reach thin film transistor 10 promptly, reduce the influence of external light to thin film transistor 10, improve the mura phenomenon.
In addition, fig. 2 schematically shows a preferred structure of a display module that can be implemented. As shown in fig. 2, the light shielding layer 2 is disposed in contact with the display panel 1, at this time, the light shielding layer 2 may be a light absorbing structure, and the external light and the light emitted from the light emitting device 20 are absorbed by the light shielding layer 2 when reaching the light shielding layer 2, so as to prevent the external light from entering the display panel 1 through the hole digging region a from the back of the display module, and prevent the light emitted from the light emitting device 20 from being reflected at the interface of the hole digging region a of the display panel 1, that is, the external light and the reflected light of the light emitting device 20 are prevented from irradiating the thin film transistor 10, the influence of the external light and the reflected light of the light emitting device 20 on the thin film transistor 10 is reduced, and the mura phenomenon is further improved.
In the embodiment, the light shielding layer 2 is arranged on one side of the display panel 1 far away from the display surface, and the orthographic projection area of the light shielding layer 2 on the display panel 1 is overlapped with the orthographic projection area of the dug hole area for arranging the device under the screen on the display panel 1, so that light transmitted to the display panel 1 by the dug hole area and reaching the thin film transistor 10 is reduced, and/or light reflected to the thin film transistor 10 by the interface of the dug hole area of the display panel 1 is reduced, further the influence of strong light on the thin film transistor 10 is reduced, the thin film transistor 10 normally works, and accordingly the correspondingly connected light-emitting device 20 can reach or approach to the expected light-emitting brightness, the mura phenomenon is improved, and the product yield is improved.
Optionally, an orthographic projection area of the light shielding layer 2 on the display panel 1 coincides with an orthographic projection area of the excavated area on the display panel 1, or the orthographic projection area of the excavated area on the display panel 1 is located within the orthographic projection area of the light shielding layer 2 on the display panel 1.
Exemplarily, referring to fig. 1, an orthographic projection area of the cut-and-hole area a on the display panel 1 is located within an orthographic projection area B of the light-shielding layer 2 on the display panel 1; referring to fig. 2, an orthographic projection area B of the light shielding layer 2 on the display panel 1 coincides with an orthographic projection area of the dug-hole area a on the display panel 1. Therefore, the light shielding layer 2 can completely cover the dug area A, thereby shielding all light irradiated to the dug area A and improving the mura phenomenon.
Optionally, the light shielding layer 2 includes a black light shielding layer or an antireflection film. The black light-shielding layer can absorb light, and light reaching the light-shielding layer 2 can be effectively prevented from being irradiated to the thin film transistor 10 by transmission or reflection. Optionally, the black light shielding layer is a black light shielding tape, thereby facilitating tearing off the light shielding layer 2 when subsequently assembling the device under the screen. The antireflection film can reduce the reflectance or increase the transmittance of light, and can reduce the reflection of light emitted from the display surface direction of the display panel 1 at the interface of the display panel 1 located in the cutout region. Optionally, the antireflection film is an ultraviolet band antireflection film. In consideration of the fact that in the screen body/module bonding process, ultraviolet curing glue such as ultraviolet ray frame glue is generally adopted for curing, and short-wave-band light such as ultraviolet rays has a greater influence on the thin film transistor 10, the anti-reflection film is an ultraviolet ray wave-band anti-reflection film, and can reduce reflection of ultraviolet rays by a boundary surface of the display panel 1 located in the hole digging region, thereby effectively avoiding influence of the ultraviolet rays on the thin film transistor 10 and improving the mura phenomenon. In this embodiment, by setting the ultraviolet band antireflection film, the reflectance of the ultraviolet band antireflection film to light is reduced by 10% compared with the case where no antireflection film is provided.
Illustratively, the ultraviolet waveband antireflection film can be an ultra-low antireflection nano-optical film, such as an SLR-0170 ultra-low antireflection nano-optical film. In this example, the reflectance of light by the ultra-low anti-reflection nano-optical film was reduced by 15% compared to that when no anti-reflection film was provided.
Optionally, the light shielding layer 2 includes a one-way transparent film, and after the display module is provided with the one-way transparent film, the light emitted by the light emitting device 20 in the display panel 1 can be transmitted, and the ultraviolet light in the screen body and/or the module attaching process can also be transmitted, and meanwhile, the external light can be prevented from entering the display panel 1 through the hole digging area a from the back of the display module, and the mura phenomenon can be effectively improved by the one-way transparent film.
Optionally, the display module further includes a protection layer 3 located on a side of the display panel 1 away from the display surface, and the protection layer 3 includes an opening defining a hole digging region.
Exemplarily, with continued reference to fig. 1 and fig. 2, the display module further includes a protection layer 3, which can define a hole digging area a through the design opening on one hand and can protect the screen body (display panel) on the other hand. Optionally, the protective layer 3 is a composite tape, which can prevent static electricity from interfering with the screen body.
Optionally, the light shielding layer 2 is attached on the protection layer 3 and/or the display panel 1. The light-shielding layer 2 may be integrated with the protective layer 3.
Specifically, referring to fig. 1, when the light shielding layer 2 is attached to the protection layer 3, an orthographic projection area of the hole digging area a on the display panel 1 is located in an orthographic projection area B of the light shielding layer 2 on the display panel 1, at this time, a gap can be formed around the opening of the protection layer 3 to accommodate the light shielding layer 2, so that the attachment area of the light shielding layer 2 and the protection layer 3 is increased, and the attachment of the light shielding layer 2 is firmer; in this case, the surface of the light shielding layer 2 away from the display panel 1 may be flush with the surface of the protective layer 3 away from the display panel 1, or may protrude from the surface of the protective layer 3 away from the display panel 1.
In addition, referring to fig. 2 and 3, the light shielding layer 2 may also be attached to the display panel 1. Alternatively, as shown in fig. 3, the light shielding layer 2 is attached to the display panel 1 over the whole surface, and the protection layer 3 is attached to the side of the light shielding layer 2 away from the display substrate 1.
Optionally, at least one black light-shielding layer is attached to the protection layer 3, and at least one antireflection film is attached to the display panel 1. The black light shielding layer attached to the protection layer 3 can effectively reduce the influence of strong external light on the thin film transistor, and the antireflection film attached to the display panel 1 can effectively reduce the reflection of light emitted from the display surface of the display panel 1 at the interface of the hole digging region of the display panel 1. The present embodiment provides various embodiments of the light shielding layer 2, which can be specifically configured according to actual situations.
Furthermore, referring to fig. 4, the light-shielding layer 2 may have two layers, wherein one light-shielding layer 2 is attached to the display panel 1, and the other light-shielding layer 2 is attached to the protection layer 3. In this case, the shielding of light reaching the hole-digging region can be enhanced, the influence of light on the thin film transistor can be further reduced, and the mura phenomenon can be improved. It is known that the two light-shielding layers 2 may be a black light-shielding layer or an antireflection film at the same time; or one of the layers is a black shading layer, the other layer is an antireflection film, and the combination mode of the black shading layer and the antireflection film achieves a more excellent effect and can be specifically set according to actual conditions.
In the above technical scheme, when the light shielding layer 2 is a black light shielding adhesive tape and the protective layer 3 is a composite adhesive tape, the black light shielding adhesive tape needs to be torn off in a subsequent under-screen device assembly process; when the light shielding layer 2 is an ultraviolet band antireflection film and the protective layer 3 is a composite adhesive tape, in a subsequent under-screen device assembly process, the ultraviolet band antireflection film is a transparent film layer and does not shield light emitted by the light emitting device 20 and external visible light, so that the ultraviolet band antireflection film does not need to be torn off.
In addition, an embodiment of the present invention provides a method for manufacturing a display module, and fig. 5 is a flowchart of the method for manufacturing a display module according to the embodiment of the present invention, where the display module has a hole digging region for disposing an off-screen device. As shown in fig. 5, the method for manufacturing the display module includes:
and step 110, preparing a display panel.
Wherein, the display panel comprises a display surface; the display panel may include an array substrate and a light emitting device on the array substrate, the array substrate including a pixel circuit for driving the light emitting device to emit light, the pixel circuit including a thin film transistor, a source/drain of the thin film transistor being electrically connected to the light emitting device.
And step 120, arranging at least one light shielding layer on one side of the display panel far away from the display surface.
The orthographic projection area of the light shielding layer on the display panel is overlapped with the orthographic projection area of the hole digging area on the display panel. The light shielding layer can select different light shielding structures according to different conditions. For example, for the case where the reflection of light is reduced while the transmission of light is reduced, the light-shielding layer may select a light-absorbing structure; for the condition that only the transmission of light needs to be reduced, the light shielding layer can be a high reflection structure or a total reflection structure; for the condition that only the reflection of light needs to be reduced, the light shielding layer can select an anti-reflection structure or an anti-reflection structure; for the case that the reflection of light in a certain wavelength band needs to be reduced, the light shielding layer can select an antireflection structure in the corresponding wavelength band.
It should be noted that, the execution sequence of the preparation method of the display module is not limited in this embodiment, and the step 120 may be executed before or after a specific step of the step 110.
The embodiment sets at least one layer of light shielding layer on one side of the display panel far away from the display surface, and the orthographic projection area of the light shielding layer on the display panel is overlapped with the orthographic projection area of the digging hole area on the display panel for setting the device under the screen, thereby reducing the light transmitted to the display panel by the digging hole area and reaching the thin film transistor, and/or reflecting the light to the thin film transistor through the interface of the digging hole area positioned on the display panel, further reducing the influence of strong light on the thin film transistor, enabling the thin film transistor to normally work, further enabling the correspondingly connected light emitting device to reach or approach the expected light emitting brightness, improving the mura phenomenon and improving the product yield.
Optionally, preparing the display panel comprises:
preparing an array substrate;
preparing a light emitting device on one side of the array substrate;
coating ultraviolet curing glue on one side of the light-emitting device, which is far away from the array substrate;
attaching the cover plate to the light-emitting device through ultraviolet curing glue;
curing the ultraviolet curing adhesive by adopting ultraviolet rays;
the method comprises the following steps that at least one layer of shading layer is arranged on one side, far away from a display surface, of the display panel, and is executed before the step of curing the ultraviolet curing glue by adopting ultraviolet rays, wherein the shading layer is an ultraviolet light waveband antireflection film.
Considering that the influence of light in short wave bands such as ultraviolet rays on the thin film transistor is larger, step 120 is executed before the step of curing the ultraviolet curing adhesive by adopting the ultraviolet rays, so that the ultraviolet rays can be effectively prevented from being transmitted to the thin film transistor in the subsequent steps, the influence on the thin film transistor is reduced, and the mura phenomenon is improved.
Optionally, the energy of the ultraviolet light is 2600 megajoules to 3500 megajoules. In the UV process of the prior art, the energy of the UV light is 3000 mhz to 4000 mhz. In a preferred embodiment of the present invention, the energy of the ultraviolet light is set to 2600 mhz to 3200 mhz, thereby reducing the energy of the ultraviolet light, further reducing the influence on the thin film transistor, and improving the yield of the product.
Optionally, after the step of curing the ultraviolet curing glue by using ultraviolet light, the method further includes:
and performing high-temperature static repair on the display module, wherein the temperature of the high-temperature static repair is lower than 80 ℃.
According to the technical scheme, the display module is subjected to high-temperature static repair, photogenerated carriers concentrated in the thin film transistor can be dispersed, and the influence on the thin film transistor is further reduced.
Preferably, the temperature of the high-temperature static repair is 60 to 80 degrees centigrade, and further preferably 60 degrees centigrade, so that the influence on the thin film transistor can be effectively reduced.
Optionally, after the step of performing high-temperature static repair on the display module, the method further includes:
a process wait, the process wait time governed by greater than or equal to 2 hours.
In a semiconductor manufacturing process, the process latency affects the yield of the product, and therefore, by properly controlling the process latency, the yield of the product can be improved. The embodiment controls the process waiting time to be more than or equal to 2 hours, and simultaneously, the design of the light shielding layer is combined, so that the yield of products can be greatly improved.
Based on the technical scheme, experiments prove that after the light shielding layer is arranged on one side, far away from the display surface, of the display panel, the reject ratio of a product is reduced to 11.70% from 29.40%; on the basis, the reject ratio of the product is reduced to 1.57 percent by carrying out high-temperature static repair on the display module for 24 hours; on the basis of the experiment, after the high-temperature static repair, the process waiting time is controlled to be more than or equal to 2 hours, so that the reject ratio of the product is reduced to 0.43 percent; on the basis of the experiment, the ultraviolet curing glue is cured by adopting ultraviolet rays with energy of 3000-3500 megajoules, and the reject ratio of the product is finally reduced to 0.04 percent. Therefore, the technical scheme of the invention can reduce the reject ratio of the product from 29.40% to 0.04%, thereby effectively improving the yield of the product.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. The utility model provides a display module assembly which characterized in that has the hole digging region that is used for setting up device under the screen, display module assembly includes:
a display panel including a display surface;
the light shielding layer is positioned on one side of the display panel far away from the display surface, and an orthographic projection area on the display panel is overlapped with an orthographic projection area of the hole digging area on the display panel; the orthographic projection area of the light shielding layer on the display panel is superposed with the orthographic projection area of the hole digging area on the display panel, or the orthographic projection area of the hole digging area on the display panel is positioned in the orthographic projection area of the light shielding layer on the display panel;
the light shielding layer comprises a black light shielding layer and an antireflection film;
the black shading layer is removed when the device under the screen is assembled, and the antireflection film is reserved;
the display module further comprises a protective layer, the protective layer is positioned on one side, far away from the display surface, of the display panel, the protective layer comprises an opening, and the opening defines the hole digging area; the light shielding layer is attached to the protective layer; a circle of the protective layer surrounding the opening forms a notch to accommodate the light shielding layer;
the black shading layer is attached to the protective layer, and the antireflection film is attached to the display panel.
2. The display module according to claim 1, wherein the black light-shielding layer is a black light-shielding tape.
3. The display module of claim 2, wherein the antireflection film is an ultraviolet band antireflection film.
4. The display module of claim 3, wherein the anti-reflective film in the ultraviolet band is an ultra-low anti-reflective nano-optical film.
5. The preparation method of the display module is characterized in that the display module is provided with a hole digging area used for arranging an underscreen device, and the preparation method of the display module comprises the following steps:
preparing a display panel, wherein the display panel comprises a display surface;
at least one light shielding layer is arranged on one side of the display panel far away from the display surface, wherein the orthographic projection area of the light shielding layer on the display panel is overlapped with the orthographic projection area of the dug hole area on the display panel;
the orthographic projection area of the light shielding layer on the display panel is superposed with the orthographic projection area of the hole digging area on the display panel, or the orthographic projection area of the hole digging area on the display panel is positioned in the orthographic projection area of the light shielding layer on the display panel;
the light shielding layer comprises a black light shielding layer and an antireflection film;
the black shading layer is removed when the device under the screen is assembled, and the antireflection film is reserved;
the display module further comprises a protective layer, the protective layer is positioned on one side, far away from the display surface, of the display panel, the protective layer comprises an opening, and the opening defines the hole digging area; the light shielding layer is attached to the protective layer; the protective layer forms a gap around one circle of the opening to accommodate the light shielding layer;
the black shading layer is attached to the protective layer, and the antireflection film is attached to the display panel.
6. The method for manufacturing a display module according to claim 5, wherein the manufacturing of the display panel comprises:
preparing an array substrate;
preparing a light emitting device on one side of the array substrate;
coating ultraviolet curing glue on one side of the light-emitting device, which is far away from the array substrate;
attaching a cover plate to the light-emitting device through the ultraviolet curing adhesive;
curing the ultraviolet curing glue by adopting ultraviolet rays;
and arranging at least one light shielding layer on one side of the display panel far away from the display surface, wherein the step of curing the ultraviolet curing glue by adopting ultraviolet rays is performed before.
7. The method for manufacturing a display module according to claim 6,
the energy of the ultraviolet ray is 2600 MJ to 3500 MJ.
8. The method for manufacturing a display module according to claim 6, further comprising, after the step of curing the UV-curable adhesive by UV light:
and carrying out high-temperature static repair on the display module, wherein the temperature of the high-temperature static repair is lower than 80 ℃.
9. The method for manufacturing a display module according to claim 8, further comprising, after the step of performing high-temperature static repair on the display module:
a process wait, the process wait time governed by greater than or equal to 2 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010245884.2A CN111402739B (en) | 2020-03-31 | 2020-03-31 | Display module and preparation method thereof |
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| CN202010245884.2A CN111402739B (en) | 2020-03-31 | 2020-03-31 | Display module and preparation method thereof |
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| CN111402739A CN111402739A (en) | 2020-07-10 |
| CN111402739B true CN111402739B (en) | 2023-03-24 |
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| KR102524754B1 (en) * | 2015-09-09 | 2023-04-21 | 엘지디스플레이 주식회사 | Display device |
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| CN109065753A (en) * | 2018-08-02 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of top light emitting-type OLED display panel and preparation method thereof |
| CN108983487B (en) * | 2018-08-31 | 2021-04-16 | 厦门天马微电子有限公司 | Liquid crystal display panel and display device |
| CN109545826B (en) * | 2018-11-19 | 2020-12-22 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device comprising display panel |
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| CN109752888A (en) * | 2019-03-26 | 2019-05-14 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
| CN110333617A (en) * | 2019-06-17 | 2019-10-15 | 武汉华星光电技术有限公司 | A kind of liquid crystal display panel |
| CN110456543A (en) * | 2019-07-26 | 2019-11-15 | 武汉华星光电技术有限公司 | Cover board and display device |
| CN110579898A (en) * | 2019-09-23 | 2019-12-17 | 武汉华星光电技术有限公司 | display module and dispensing method thereof |
| CN110660835B (en) * | 2019-09-30 | 2023-07-14 | 武汉天马微电子有限公司 | Organic light emitting display panel and organic light emitting display device |
| CN110706609A (en) * | 2019-10-12 | 2020-01-17 | Oppo广东移动通信有限公司 | Display module and electronic device |
| CN110767732B (en) * | 2019-10-31 | 2022-04-05 | 昆山国显光电有限公司 | Display device |
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