CN111399292A - 阵列基板及其制备方法和触控液晶显示装置 - Google Patents
阵列基板及其制备方法和触控液晶显示装置 Download PDFInfo
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Abstract
本发明提供一种阵列基板及制备方法,阵列基板包括阵列排布的多个子像素,每个子像素包括显示像素区和光敏像素区,显示像素区内设有电连接的开关薄膜晶体管和像素电极,光敏像素区内设有光敏薄膜晶体管。本发明提供一种触控液晶显示装置,包括上述阵列基板。本发明提供的阵列基板及其制备方法和触控液晶显示装置,通过在阵列基板的显示像素区形成电连接的开关薄膜晶体管和像素电极,在阵列基板的光敏像素区形成光敏薄膜晶体管,可使光敏薄膜晶体管的制程与开关薄膜晶体管的制程兼容,从而可以在实现远程感测的同时降低成本。
Description
技术领域
本发明涉及显示技术领域,且特别是涉及一种阵列基板及其制备方法和触控液晶显示装置。
背景技术
薄膜晶体管在显示领域得到广泛的应用,氧化物薄膜晶体管,低温多晶硅薄膜晶体管等新技术不断更新。近年来,氢化非晶硅薄膜晶体管(a-Si:H TFT)技术被广泛应用于LCD的开关元件。目前,a-Si:H TFT技术简单,适合用于大面积的电子器件,对显示产业的发展有很大的帮助。
此外,a-Si:H TFT的高光敏特性也为光学传感器的应用提供了发展潜力。利用a-Si:H薄膜的电光特性,可以使a-Si:H TFT实现X射线图像传感、指纹和光学触摸显示等多种增值功能。在这些新的TFT技术中,具有远程触控功能的超大尺寸交互式屏幕在会议室和会议室应用中受到高度重视,在这种情况下,一般使用发光二极管或者激光笔来提供多点光学输入功能。如何将光敏薄膜晶体管嵌入触控液晶显示装置内且与触控液晶显示装置的TFT开关制程兼容,是亟待解决的问题。
发明内容
本发明的目的在于提供一种阵列基板及其制备方法和触控液晶显示装置,以解决现有触控液晶装置实现远程触控时光敏薄膜晶体管无法与触控液晶显示装置的制程相兼容的问题。
本发明解决其技术问题是采用以下的技术方案来实现的。
本发明提供一种阵列基板,所述阵列基板包括阵列排布的多个子像素,每个子像素包括显示像素区和光敏像素区,所述显示像素区内设有电连接的开关薄膜晶体管和像素电极,所述光敏像素区内设有光敏薄膜晶体管。
在本发明的一个实施例中,所述阵列基板包括与所述开关薄膜晶体管电连接的第一数据线和第一扫描线以及与所述光敏薄膜晶体管电连接的第二数据线和第二扫描线。
本发明还提供一种触控液晶显示装置,包括如上所述的阵列基板。
在本发明的一个实施例中,触控液晶显示装置包括与所述阵列基板相对设置的彩色滤光基板,所述彩色滤光基板包括第一色阻区、第二色阻区和第三色阻区,每个色阻区与所述阵列基板上的一子像素对应设置。
本发明还提供一种制备阵列基板的方法,包括:
在阵列基板的基底上的显示像素区和光敏像素区同步形成开关薄膜晶体管和光敏薄膜晶体管;
在所述开关薄膜晶体管上形成相互绝缘的像素电极和公共电极,所述像素电极与所述开关薄膜晶体管电性连接;
在本发明的一个实施例中,在阵列基板的基底上的显示像素区和光敏像素区同步形成开关薄膜晶体管和光敏薄膜晶体管的步骤包括:
在所述基底的所述显示像素区和所述光敏像素区分别形成第一栅极跟第二栅极,以及在形成所述第一栅极和所述第二栅极的所述基底上形成绝缘层。
在本发明的一个实施例中,在形成所述第一栅极和所述第二栅极的所述基底上形成绝缘层后的步骤包括:
在形成所述绝缘层的所述第二栅极上形成第二沟道层后,在形成所述绝缘层的所述第一栅极上形成第一沟道层。
在本发明的一个实施例中,在形成所述绝缘层的所述第一栅极上形成第一沟道层后的步骤还包括:在所述第一沟道层上形成光阻层,在所述第二沟道层及形成有所述光阻层的所述第一沟道层上形成源漏金属层。
在本发明的一个实施例中,对所述第二沟道层上方的所述源漏金属层进行蚀刻形成所述光敏薄膜晶体管的第二源极和第二漏极。
在本发明的一个实施例中,通过剥离工艺将所述第一沟道层上方的所述光阻层剥离后,所述第一沟道层上方的所述源漏金属层形成所述开关薄膜晶体管的第一源极和第一漏极;所述第一源极与所述第一漏极之间的距离小于或等于所述第二源极和所述第二漏极之间的距离。
在本发明的一个实施例中,所述开关薄膜晶体管为氧化物薄膜晶体管,所述光敏薄膜晶体管为氢化非晶硅薄膜晶体管。
本发明提供的阵列基板及其制备方法,通过在阵列基板的显示像素区形成电连接的开关薄膜晶体管和像素电极,在阵列基板的光敏像素区形成光敏薄膜晶体管,可使光敏薄膜晶体管的制程与开关薄膜晶体管的制程兼容,从而可以在实现远程感测的同时降低成本。
附图说明
图1为本发明第一实施例中液晶触控显示装置的剖面图。
图2为本发明第一实施例中彩色滤光基板的平面结构示意图。
图3为本发明第一实施例中阵列基板的平面结构示意图。
图4a至图4m为本发明第一实施例中阵列基板的制备工艺流程图。
图5为本发明第二实施例中阵列基板的剖面图。
具体实施方式
为更进一步阐述本发明为达成预定发明目的所采取的技术方式及功效,以下结合附图及实施例,对本发明的具体实施方式、结构、特征及其功效,详细说明如后。
[第一实施例]
图1为本发明第一实施例中液晶触控显示装置的剖面图,图2为本发明第一实施例中彩色滤光基板的平面结构示意图,图3为本发明第一实施例中阵列基板的平面结构示意图。请结合图1至图3,本发明的实施例提供一种液晶触控显示装置,该液晶触控显示装置包括阵列基板100,阵列基板100包括阵列排布的多个子像素SP(sub-pixel)、第一数据线41、第一扫描线51、第二数据线42和第二扫描线52,每个子像素SP包括显示像素区SP1和光敏像素区SP2,显示像素区SP1内设有电连接的开关薄膜晶体管10和像素电极31,光敏像素区SP2内设有光敏薄膜晶体管20;第一数据线41和第一扫描线51分别与开关薄膜晶体管10电连接,第二数据线42和第二扫描线52分别与光敏薄膜晶体管20电连接。本实施例中,子像素SP例如为红色R、绿色G或蓝色B子像素,多个相邻的子像素SP构成一个显示像素(pixel)。例如,一个显示像素可包括红色R、绿色G和蓝色B三个子像素SP。
请结合图1至图3,第一数据线41和第二数据线42相邻且平行设置,第一扫描线51和第二扫描线52相邻且平行设置。开关薄膜晶体管10包括第一栅极11、第一沟道层13、第一源极14和第一漏极15,第一栅极11连接至第一扫描线51,第一沟道层13设置在第一栅极11上方且分别与第一源极14和第一漏极15电性连接,第一源极14和第一漏极15之一电连接第一数据线41,第一源极14和第一漏极15之另一连接至像素电极31。例如,第一源极14连接至第一数据线41,第一漏极15连接至像素电极31。
光敏薄膜晶体管20包括第二栅极21、第二沟道层23、第二源极24和第二漏极25,第二栅极21连接至第二扫描线52,第二沟道层23设置在第二栅极21上方且分别与第二源极24和第二漏极25电性连接。第二源极24和第二漏极25之一连接至第二数据线42,第二源极24和第二漏极25之另一通过接触孔连接至第二扫描线52,例如,第二源极24连接至第二数据线42,第二漏极25通过接触孔连接至第二扫描线52。本实施例中,第一扫描线51和第二扫描线52可连接至同样的信号端来接收相同的电信号。
请结合图1至图3,液晶触控显示装置还包括与阵列基板100相对设置的彩色滤光基板200,彩色滤光基板200包括第一色阻区201、第二色阻区202和第三色阻区203,例如:第一色阻区201为红色色阻区、第二色阻区为绿色色阻区、第三色阻区203为蓝色色阻区。每个色阻区与阵列基板100上的一子像素SP对应设置。
当LED光或者激光照射在液晶触控显示装置上时,LED光或者激光透过彩色滤光基板200照射到阵列基板100上,阵列基板100的光敏薄膜晶体管20可以将光强转化为电信号,从而可以实现非接触式的远程触控。
本实施例中,第一源极14与第一漏极15之间的距离等于第二源极24和第二漏极25之间的距离。
图4a至图4m为本发明第一实施例中阵列基板的制备工艺流程图,请结合图4a至图4m,本发明的实施例提供一种制备阵列基板的方法,包括:
在阵列基板100的基底110上的显示像素区SP1和光敏像素区SP2同步形成开关薄膜晶体管10和光敏薄膜晶体管20;
在开关薄膜晶体管10上形成相互绝缘的像素电极31和公共电极32,像素电极31与开关薄膜晶体管10电性连接。
其中,开关薄膜晶体管10为氧化物薄膜晶体管,光敏薄膜晶体管20为氢化非晶硅薄膜晶体管。
下面对阵列基板100的制作流程进行具体说明。
请结合图4a,提供一基底110,在基底110上同步形成第一栅极11和第二栅极21,其中,第一栅极11位于显示像素区SP1,第二栅极21位于光敏像素区SP2。然后,在形成有第一栅极11和第二栅极21的基底110上再依次形成一栅极绝缘层101和一绝缘层12。该绝缘层12的材质例如为氧化硅。
请结合图4b,在形成绝缘层12的第二栅极21上形成第二沟道层23。该第二沟道层23为a-Si:H薄膜层。
请结合图4c,在形成绝缘层12的第一栅极11上形成第一沟道层13,该第一沟道层13和该第二沟道层23同层设置。然后,在该第一沟道层13上形成光阻层102。本实施例中,该第一沟道层13的材料为铟镓锌氧化物(indium gallium zinc oxide,IGZO),采用IGZO作为第一沟道层13的材料,可以有效降低采用传统氧化硅带来的晶体管漏电流过热问题。在第一沟道层13上形成光阻层102,可以改善IGZO薄膜晶体管的抗液体侵蚀能力,并且提高器件的稳定性。
请结合图4d,在该第一沟道层13上形成光阻层102后,再于第二沟道层23及形成有光阻层的第一沟道层13上形成源漏金属层16。
请结合图4e,对第二沟道层23上方的源漏金属层16进行蚀刻形成光敏薄膜晶体管20的第二源极24和第二漏极25。
请结合图4f,通过剥离工艺将第一沟道层13上方的光阻层102剥离后,光阻层102带着源漏金属层16的部分金属一起脱落,第一沟道层13上方的源漏金属层16形成开关薄膜晶体管10的第一源极14和第一漏极15。其中,剥离(Lift-off)工艺是首先在衬底上涂胶并光刻,然后再制备金属薄膜,在有光刻胶的地方,金属薄膜形成在光刻胶上,而没有光刻胶的地方,金属薄膜就直接形成在衬底上。当使用溶剂去除衬底上的光刻胶时,不需要的金属就随着光刻胶的溶解而脱落在溶剂中,而直接形成在衬底上的金属部分则保留下来形成图形。剥离通常用于铂、金、硅化物和难熔金属的图形化。
请结合图4g,在形成有第一源极14和第一漏极15及形成有第二源极24和第二漏极25的基底110上方形成第一保护层103,该第一保护层103覆盖该显示像素区SP1和光敏像素区SP2。
请结合图4h至图4j,在形成有第一保护层103的基底110上方形成有机平坦层104,有机平坦层104覆盖该显示像素区SP1和光敏像素区SP2。对该有机平坦层104蚀刻后形成第一接触孔106使得第一保护层103部分露出,再于第一保护层103上方形成公共电极32。该公共电极32仅形成在显示像素区SP1内。
请结合图4k,在形成有公共电极32的基底110上方形成第二保护层105,该第二保护层105在第一接触孔106处与第一保护层103接触。该第二保护层105覆盖显示像素区SP1和光敏像素区SP2。
请结合图4l到图4m,对第二保护层105进行蚀刻使得第一源极14露出,再于第二保护层105上方形成像素电极31,该像素电极31与该第一源极14相接触。其中,像素电极31仅形成在显示像素区SP1的上方。
本发明提供的阵列基板及其制备方法,通过在阵列基板100的显示像素区SP1形成电连接的开关薄膜晶体管10和像素电极31,在阵列基板100的光敏像素区SP2形成光敏薄膜晶体管20,同时在阵列基板上增加第二数据线和第二扫描线,通过第二数据线和第二扫描线对光敏薄膜晶体管20的触摸感应进行优化;另外,开关薄膜晶体管10为氧化物薄膜晶体管,采用IGZO作为第一沟道层13的材料,光敏薄膜晶体管20为氢化非晶硅薄膜晶体管,采用a-Si作为第二沟道层23的材料;本发明创新性地将该光敏薄膜晶体管20的制程与该开关薄膜晶体管10的制程兼容,从而可以在实现远程感测的同时还可以降低成本。
[第二实施例]
图5为本发明第二实施例中阵列基板的剖面图。阵列基板100的每个子像素SP包括显示像素区SP1和光敏像素区SP2,显示像素区SP1内设有电连接的开关薄膜晶体管和像素电极31,还包括公共电极32,该公共电极32和像素电极31通过第二保护层105绝缘设置,光敏像素区SP2内设有光敏薄膜晶体管。第一栅极11位于显示像素区SP1,第二栅极21位于光敏像素区SP2。在第二沟道层23上方形成光敏薄膜晶体管的第二源极24和第二漏极25。在第一沟道层13上方形成开关薄膜晶体管的第一源极14和第一漏极15。
本实施例与第一实施例的区别在于,第一源极14与所述第一漏极15之间的距离小于第二源极24和第二漏极25之间的距离。这样的设计可以增大光敏薄膜晶体管20的第二沟道层23露出的面积,使得第二沟道层23更容易感测到光线,从而能够提高光敏薄膜晶体管20的灵敏度。
在本文中,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,除了包含所列的那些要素,而且还可包含没有明确列出的其他要素。
在本文中,所涉及的前、后、上、下等方位词是以附图中零部件位于图中以及零部件相互之间的位置来定义的,只是为了表达技术方案的清楚及方便。应当理解,所述方位词的使用不应限制本申请请求保护的范围。
在不冲突的情况下,本文中上述实施例及实施例中的特征可以相互结合。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种阵列基板(100),其特征在于,所述阵列基板(100)包括阵列排布的多个子像素(SP),每个子像素(SP)包括显示像素区(SP1)和光敏像素区(SP2),所述显示像素区(SP1)内设有电连接的开关薄膜晶体管(10)和像素电极(31),所述光敏像素区(SP2)内设有光敏薄膜晶体管(20)。
2.如权利1所述的阵列基板(100),其特征在于,所述阵列基板(100)包括与所述开关薄膜晶体管(10)电连接的第一数据线(41)和第一扫描线(51)以及与所述光敏薄膜晶体管(20)电连接的第二数据线(42)和第二扫描线(52)。
3.一种触控液晶显示装置,其特征在于,包括如权利要求1至2任一项所述的阵列基板(100)。
4.如权利要求3所述的触控液晶显示装置,其特征在于,所述触控液晶显示装置还包括与所述阵列基板(100)相对设置的彩色滤光基板(200),所述彩色滤光基板(200)包括第一色阻区(201)、第二色阻区(202)和第三色阻区(203),每个色阻区与所述阵列基板(100)上的一子像素(SP)对应设置。
5.一种制备阵列基板的方法,其特征在于,包括:
在阵列基板(100)的基底(110)上的显示像素区(SP1)和光敏像素区(SP2)同步形成开关薄膜晶体管(10)和光敏薄膜晶体管(20);
在所述开关薄膜晶体管(10)上形成相互绝缘的像素电极(31)和公共电极(32),所述像素电极(31)与所述开关薄膜晶体管(10)电性连接;
其中,在阵列基板(100)的基底(110)上的显示像素区(SP1)和光敏像素区(SP2)同步形成开关薄膜晶体管(10)和光敏薄膜晶体管(20)的步骤包括:
在所述基底(110)的所述显示像素区(SP1)和所述光敏像素区(SP2)分别形成第一栅极(11)跟第二栅极(21),以及在形成所述第一栅极(11)和所述第二栅极(21)的所述基底(110)上形成绝缘层(12)。
6.如权利要求5所述的制备阵列基板的方法,其特征在于,在形成所述第一栅极(11)和所述第二栅极(21)的所述基底(110)上形成绝缘层(12)后的步骤包括:
在形成所述绝缘层(12)的所述第二栅极(21)上形成第二沟道层(23)后,在形成所述绝缘层(12)的所述第一栅极(11)上形成第一沟道层(13)。
7.如权利要求6所述的制备阵列基板的方法,其特征在于,在形成所述绝缘层(12)的所述第一栅极(11)上形成第一沟道层(13)后的步骤还包括:在所述第一沟道层(13)上形成光阻层(102),在所述第二沟道层(23)及形成有所述光阻层(102)的所述第一沟道层(13)上形成源漏金属层(16)。
8.如权利要求7所述的制备阵列基板的方法,其特征在于,对所述第二沟道层(23)上方的所述源漏金属层(16)进行蚀刻形成所述光敏薄膜晶体管(20)的第二源极(24)和第二漏极(25)。
9.如权利要求7所述的制备阵列基板的方法,其特征在于,通过剥离工艺将所述第一沟道层(13)上方的所述光阻层(102)剥离后,所述第一沟道层(13)上方的所述源漏金属层(16)形成所述开关薄膜晶体管(10)的第一源极(14)和第一漏极(15);所述第一源极(14)与所述第一漏极(15)之间的距离小于或等于所述第二源极(24)和所述第二漏极(25)之间的距离。
10.如权利要求5所述的制备阵列基板的方法,其特征在于,所述开关薄膜晶体管(10)为氧化物薄膜晶体管,所述光敏薄膜晶体管(20)为氢化非晶硅薄膜晶体管。
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