CN111383909A - Method for curing nano-pattern structure under assistance of electromagnetic waves - Google Patents
Method for curing nano-pattern structure under assistance of electromagnetic waves Download PDFInfo
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- CN111383909A CN111383909A CN201811645129.2A CN201811645129A CN111383909A CN 111383909 A CN111383909 A CN 111383909A CN 201811645129 A CN201811645129 A CN 201811645129A CN 111383909 A CN111383909 A CN 111383909A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
The invention provides a method for curing a nano-pattern structure by assistance of electromagnetic waves, which comprises the steps of placing a developed wafer in a deionized water solution, and replacing a developing solution by the deionized water solution; fixing the replaced wafer on a wafer carrying table in a microwave drying chamber; rotating the wafer carrying table, centrifugally drying the wafer, starting a vacuum pump set at the same time, and discharging water vapor in the cavity out of the cavity; and stopping rotating the slide holder, starting the microwave power source to completely apply microwave power to the microwave drying chamber, performing microwave drying and curing on the nano-pattern structure on the wafer until the moisture on the wafer is completely removed, closing the microwave power source and the vacuum pump set, and taking out the wafer. The method for curing the nano-pattern structure under the assistance of the electromagnetic waves can effectively and thoroughly remove the water on the wafer, so that the nano-pattern structure is dried and cured, and the nano-pattern structure cannot collapse in the curing process.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for curing a nano-pattern structure under the assistance of electromagnetic waves.
Background
Modern integrated circuit processes are continually moving towards smaller feature sizes and larger wafer sizes, such as feature sizes going into 10 nanometers and wafer diameters greater than 12 inches, which present greater challenges to the microelectronic device fabrication process. As the collapse of nanostructures on wafers has become an increasingly serious problem during the fabrication of microelectronic devices as feature sizes have further decreased and structural complexity has further increased. The reasons for the collapse of the structure are many, such as the application of external forces, the stress of the structure itself, weaker materials of the structure, and the surface tension during drying.
The general fabrication process of semiconductor nano-structure is to grow a thin film on a wafer, then spin-coat a photoresist (or called resist), and then perform photolithography exposure, and high resolution photolithography is a necessary condition for obtaining a high quality nano-structure pattern. The resist nano pattern structure processed by the high-resolution photoetching technology is processed, the subsequent processing technology also directly influences the quality of the nano structure pattern, particularly the processing of the resist pattern, and as the developing process is a wet process, a small amount of moisture can be left in the nano pattern structure on the wafer, particularly in a deep groove, and the moisture often causes the collapse of the nano pattern structure due to the action of surface tension in the drying process, so that the key for avoiding the collapse is how to quickly, effectively and thoroughly remove the moisture.
Conventional drying methods, such as centrifugal drying, which is effective for macro-structures by using centrifugal force to spin moisture out of the wafer, are difficult to completely remove moisture attached to the nano-pattern structure.
As another example, nitrogen purging is performed by purging the micro-nano structures on the wafer with the ejected nitrogen, which is effective for shallow and wide trench structures, but is not effective for photoresist deep trenches with high aspect ratio, and even the structures may be blown down due to too large purging force.
In addition, there are some composite drying methods, i.e. adding a high temperature drying process, drying by baking, however, the moisture cannot be completely removed by spin-drying or blowing, and in the baking process, the nano pattern will inevitably collapse from the inside due to the surface tension of the moisture attached to the nano pattern structure, resulting in the rejection of the whole wafer and a large loss.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for curing a nano-pattern structure under the assistance of electromagnetic waves, which can effectively and thoroughly remove water on a wafer so as to dry and cure the nano-pattern structure, and the nano-pattern structure cannot collapse in the curing process.
In order to solve the technical problem, the invention provides a method for curing a nano-pattern structure by assistance of electromagnetic waves, which comprises the following steps:
placing the wafer with the nano-pattern structure after development in a deionized water solution, and replacing the developing solution on the wafer with the deionized water solution;
placing the replaced wafer on a slide holder in a microwave drying chamber, starting a vacuum adsorption device, and fixing the wafer on the slide holder;
rotating the wafer carrying table, centrifugally drying the wafer, starting a vacuum pump set at the same time, and discharging water vapor in the microwave drying cavity to the outside of the microwave drying cavity;
stopping rotating the slide holder, starting a microwave power source, completely applying microwave power into the microwave drying cavity through a microwave coupling matcher, carrying out microwave drying and curing on the nanometer pattern structure on the wafer so as to completely remove moisture in the nanometer pattern structure on the wafer, closing the microwave power source and the vacuum pump set, further drying and curing the wafer, and taking out the wafer.
Further, the turning off the microwave power source and the vacuum pump set to further dry and solidify the wafer includes: and starting an ultraviolet curing lamp in the microwave drying chamber, and further drying and curing the wafer by irradiating the nano pattern structure on the wafer.
Further, the working time of the rotary centrifugal drying of the slide holder is 5-30 minutes; the working time of the microwave power source is 5 minutes to 100 minutes; the working time of the ultraviolet curing lamp is 5 minutes to 30 minutes.
Further, the microwave power applied to the microwave drying chamber by the microwave power source through the microwave coupling matcher is 100W to 5000W.
Further, the microwave frequency applied to the microwave drying chamber by the microwave power source is 900MHz to 13 GHz.
Compared with the prior art, the invention has the following advantages:
A. the method for curing the nano-pattern structure by the aid of the electromagnetic waves comprises the steps of firstly, centrifugally spin-drying a wafer by using a rotating mechanism, removing water attached to the surface of the wafer, and enabling the water remained in the nano-pattern structure on the wafer to enter a rotating supercritical state by using microwaves, so that a water molecule cluster structure is broken, and the surface tension of the water is removed, so that the problems of breakage, lodging or adhesion and the like of the nano-pattern structure in the drying process are solved, the water on the wafer can be effectively and thoroughly removed, and the rapid curing of the nano-pattern structure is realized.
B. The method for curing the nano-pattern structure by the aid of the electromagnetic waves can completely apply the output power of the microwave power source to the cavity, the power loss in the conveying process is minimum, and drying and curing are more sufficient.
C. The micro-nano curing method provided by the invention also utilizes an ultraviolet curing lamp to perform auxiliary curing on the micro-nano pattern structure, and is beneficial to enhancing the drying and curing effect.
Drawings
Fig. 1 is a schematic flow chart of a method for electromagnetic wave-assisted curing of a nanopattern structure according to an embodiment of the invention.
Detailed Description
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
First, the basic physical principle of drying using electromagnetic waves is briefly described, and since water is a polar molecule, the polar molecule does not show polarity in the absence of an applied electromagnetic field. Under the condition of an external alternating electromagnetic field, water molecules can be rapidly polarized, and the stronger the external alternating electromagnetic field is, the stronger the polarization effect is. At this time, the kinetic energy of the molecular heat motion is increased, that is, the heat quantity is increased, and the temperature of the water is increased, thereby realizing the conversion of electromagnetic energy into heat energy. Therefore, the water molecules can absorb electromagnetic waves, convert electromagnetic wave energy into heat, and absorb the heat. The polarity of water molecules is continuously reversed along with the continuous change of the direction of an external alternating electromagnetic field, and finally the water molecules rotate rapidly in the alternating electromagnetic field, kinetic energy is increased, liquid is rapidly heated and vaporized, a gas-liquid interface is prevented from being generated, a good drying effect is achieved, and nondestructive drying is realized.
Referring to fig. 1, a method for curing a nanopattern structure with assistance of electromagnetic waves according to an embodiment of the present invention includes the following steps:
And step 130, rotating the wafer carrying table, centrifugally drying the wafer, and simultaneously starting a vacuum pump set to discharge water vapor in the microwave drying cavity to the outside of the microwave drying cavity. The slide holder below is provided with rotating electrical machines, and rotating electrical machines is connected with the slide holder with mechanical system, and then can order about the slide holder to rotate around rotating electrical machines's rotation axis, and mechanical system includes and is not limited to threaded connection, keyway connection and pin-hole connection etc.. The spin-drying speed is in the range of 100 to 10000 rpm, preferably 500 to 5000 rpm, in particular 1000 to 3000 rpm. The working time of the spin-drying can be set to 5-30 minutes, and is set according to the size of the wafer, the complexity of the nano-pattern structure and the moisture degree of the wafer, the main judgment is that the moisture attached to the surface of the wafer can be completely removed by the spin-drying, or a temperature and humidity sensor can be arranged in the chamber, and the process proceeds to step 140 when the temperature and the humidity reach the preset values.
And 140, stopping rotating the slide holder, starting a microwave power source, completely applying microwave power into the microwave drying chamber through the microwave coupling matcher, and performing microwave drying and curing on the nano-pattern structure on the wafer.
The microwave power source is connected with the microwave coupling matcher through a microwave transmission wire, and the microwave coupling matcher is arranged on the side wall of the cavity and comprises a microwave antenna, an impedance matching network and a microwave detector. The microwave power source transmits microwave energy with certain power to the microwave coupling matcher through a microwave transmission wire, the microwave coupling matcher applies the microwave energy to the inside of the cavity by means of a microwave antenna, and meanwhile, the impedance matching network and the microwave detector are started to detect in real time and perform impedance matching, so that the output power of the microwave power source can be completely applied to the inside of the cavity, and therefore moisture attached to the inside of the micro-nano graph structure on the wafer can absorb corresponding microwave energy, polarization of water molecules is achieved, the wafer enters a rotary supercritical state, the water molecule cluster structure is broken, surface tension of the water is eliminated, electromagnetic wave energy is converted into heat, and the liquid state is rapidly heated and vaporized. At the same time, the vacuum pump set is also working to continuously remove the water vapor in the chamber to the outside of the chamber.
The microwave transmission wire can adopt a waveguide band or a coaxial cable. The microwave power source applies microwaves to the microwave drying chamber in a frequency range of 900MHz to 13GHz, preferably 915MHz to 10GHz, in particular 915MHz to 3 GHz; the microwave power applied by the microwave power source to the microwave drying chamber through the microwave coupling matcher is in the range of 100W to 5000W, preferably 200W to 3500W, and particularly 200W to 2000W. The working time length of the microwave power source can be set to be 5 minutes to 100 minutes, the working time length is set according to the size of the wafer, the complexity of the micro-nano graph structure and the wetting degree of the wafer, the main judgment basis is that moisture reserved in the nano graph structure on the wafer can be completely removed through microwave drying and curing, a temperature and humidity sensor can also be arranged in the chamber, and when the temperature and the humidity reach preset values, the step 150 is carried out.
And 150, closing the microwave power source and the vacuum pump set, starting an ultraviolet curing lamp in the microwave drying chamber, and irradiating the nano-pattern structure, so as to further dry and cure the wafer, wherein the drying and curing time in the step can be set to be 5-30 minutes, and finally, taking out the wafer after the curing is finished.
Therefore, the method for curing the nano-pattern structure by the aid of the electromagnetic waves solves the problems of fracture, lodging or adhesion and the like of the nano-pattern structure in the drying process, and can effectively and thoroughly remove water on the wafer, so that the aim of quickly curing the nano-pattern structure is fulfilled.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (5)
1. A method for electromagnetic wave assisted curing of a nanopattern structure, the method comprising:
placing the wafer with the nano-pattern structure after development in a deionized water solution, and replacing the developing solution on the wafer with the deionized water solution;
placing the replaced wafer on a slide holder in a microwave drying chamber, starting a vacuum adsorption device, and fixing the wafer on the slide holder;
rotating the wafer carrying table, centrifugally drying the wafer, starting a vacuum pump set at the same time, and discharging water vapor in the microwave drying cavity to the outside of the microwave drying cavity;
stopping rotating the slide holder, starting a microwave power source, completely applying microwave power into the microwave drying chamber through a microwave coupling matcher, and performing microwave drying and curing on the nano-pattern structure on the wafer so as to completely remove moisture in the nano-pattern structure on the wafer;
and closing the microwave power source and the vacuum pump set, further drying and solidifying the wafer, and taking out the wafer.
2. The method for electromagnetic wave assisted curing of nano-pattern structure according to claim 1, wherein the turning off the microwave power source and the vacuum pump set further dries and cures the wafer, comprising:
and starting an ultraviolet curing lamp in the microwave drying chamber, and further drying and curing the wafer by irradiating the nano pattern structure on the wafer.
3. The method for electromagnetic wave assisted curing of nanopattern structures according to claim 2, wherein: the working time of the rotary centrifugal drying of the slide holder is 5 to 30 minutes; the working time of the microwave power source is 5 minutes to 100 minutes; the working time of the ultraviolet curing lamp is 5 minutes to 30 minutes.
4. The method for electromagnetic wave assisted curing of nanopattern structures according to claim 1, wherein: the microwave power applied to the microwave drying chamber by the microwave power source through the microwave coupling matcher is 100W to 5000W.
5. The method for electromagnetic wave assisted curing of nanopattern structures according to claim 4, wherein: the microwave frequency applied to the microwave drying chamber by the microwave power source is 900MHz to 13 GHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811645129.2A CN111383909A (en) | 2018-12-29 | 2018-12-29 | Method for curing nano-pattern structure under assistance of electromagnetic waves |
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| CN201811645129.2A CN111383909A (en) | 2018-12-29 | 2018-12-29 | Method for curing nano-pattern structure under assistance of electromagnetic waves |
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| CN111383909A true CN111383909A (en) | 2020-07-07 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4428659A (en) * | 1981-06-02 | 1984-01-31 | Napp Systems (Usa), Inc. | Apparatus and method for removing soluble portions of a coating |
| CN1957260A (en) * | 2004-05-19 | 2007-05-02 | Jsr株式会社 | Sheet probe, manufacturing method and application therefor |
| CN104347450A (en) * | 2013-08-08 | 2015-02-11 | 中国科学院微电子研究所 | Semiconductor drying device and method |
| US20160139454A1 (en) * | 2013-07-30 | 2016-05-19 | Sharp Kabushiki Kaisha | Light diffusion member, method for manufacturing same, and display device |
| CN108266972A (en) * | 2017-12-26 | 2018-07-10 | 德淮半导体有限公司 | Drying wafer method |
-
2018
- 2018-12-29 CN CN201811645129.2A patent/CN111383909A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4428659A (en) * | 1981-06-02 | 1984-01-31 | Napp Systems (Usa), Inc. | Apparatus and method for removing soluble portions of a coating |
| CN1957260A (en) * | 2004-05-19 | 2007-05-02 | Jsr株式会社 | Sheet probe, manufacturing method and application therefor |
| US20160139454A1 (en) * | 2013-07-30 | 2016-05-19 | Sharp Kabushiki Kaisha | Light diffusion member, method for manufacturing same, and display device |
| CN104347450A (en) * | 2013-08-08 | 2015-02-11 | 中国科学院微电子研究所 | Semiconductor drying device and method |
| CN108266972A (en) * | 2017-12-26 | 2018-07-10 | 德淮半导体有限公司 | Drying wafer method |
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Application publication date: 20200707 |