CN108266972A - Drying wafer method - Google Patents

Drying wafer method Download PDF

Info

Publication number
CN108266972A
CN108266972A CN201711428448.3A CN201711428448A CN108266972A CN 108266972 A CN108266972 A CN 108266972A CN 201711428448 A CN201711428448 A CN 201711428448A CN 108266972 A CN108266972 A CN 108266972A
Authority
CN
China
Prior art keywords
wafer
microwave
drying
heating treatment
tack free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711428448.3A
Other languages
Chinese (zh)
Inventor
周颖
邱宇航
洪纪伦
吴宗祐
林宗贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huaian Imaging Device Manufacturer Corp
Original Assignee
Huaian Imaging Device Manufacturer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huaian Imaging Device Manufacturer Corp filed Critical Huaian Imaging Device Manufacturer Corp
Priority to CN201711428448.3A priority Critical patent/CN108266972A/en
Publication of CN108266972A publication Critical patent/CN108266972A/en
Pending legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B7/00—Drying solid materials or objects by processes using a combination of processes not covered by a single one of groups F26B3/00 and F26B5/00
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B3/00—Drying solid materials or objects by processes involving the application of heat
    • F26B3/32—Drying solid materials or objects by processes involving the application of heat by development of heat within the materials or objects to be dried, e.g. by fermentation or other microbiological action
    • F26B3/34—Drying solid materials or objects by processes involving the application of heat by development of heat within the materials or objects to be dried, e.g. by fermentation or other microbiological action by using electrical effects
    • F26B3/347—Electromagnetic heating, e.g. induction heating or heating using microwave energy
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/16—Drying solid materials or objects by processes not involving the application of heat by contact with sorbent bodies, e.g. absorbent mould; by admixture with sorbent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Microbiology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Biomedical Technology (AREA)
  • Biotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a kind of drying wafer method, including：Wafer to be dried is provided；Microwave heating treatment is carried out to the wafer；Dry tack free processing is carried out to the wafer.Above-mentioned drying wafer method can improve drying wafer efficiency, reduce washmarking defect.

Description

Drying wafer method
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of drying wafer methods.
Background technology
In entire chip fabrication processes, almost cleaning is directed to per procedure.Per pass cleaning it is last Wafer, which will pass through, to be dried, and it is also finally a most important step that this, which just makes drying wafer be treated as cleaning,.It is dry It is to generate washmarking defect that processing, which does not optimize direct result, has large effect to the yield of chip.
At present, two major class are broadly divided into classification for dry technology：1. utilize the spin drying method of mechanical centrifugal power (Spin Dry)；2. utilize the seasoning (IPA Dry) of isopropanol.
1 utilizes the spin drying method (Spin Dry) of mechanical centrifugal power：Its principle be using generate under high speed rotation from Mental and physical efforts, and coordinate air filter spray under clean gas, the water droplet on chip is spin-dried for, for irrigation canals and ditches (Deep Trench the water droplet in) can be also sucked out according to bernoulli principle, evaporation it is dry and without particle and washmarking.
2 utilize the seasoning (IPA Dry) of isopropanol：Moist chip is reached into isopropanol (IPA) overflow deionized water (DIW) in slot.Isopropanol (IPA) is then by N2As transmission gas, N2The IPA liquid of heating is imported, makes the IPA of high volatile Gaseous state IPA is generated to be passed in slot.With reference to the wafer IPA concentration that the action of slow pull-up will make crystal column surface out of overflow DIW slots It higher than liquid level, is flowed into slot by IPA concentration differences water droplet in this way, while crystal column surface moisture content can be dehydrated and do by IPA high volatiles It is dry.
During wafer is dried in the above method, wafer outer is dried first, and then inside is done again It is dry.Wafer outer drying first can hinder internal moisture to continue outer move so that inside wafer is not easy to be dried, and influences dry effect Rate.
Therefore, to wafer, withering efficiency need further to improve.
Invention content
The technical problem to be solved by the invention is to provide a kind of drying wafer methods, can improve and wafer is done The efficiency of dry processing.
To solve the above-mentioned problems, the present invention provides a kind of drying wafer method, including：Wafer to be dried is provided；It is right The wafer carries out microwave heating treatment；Dry tack free processing is carried out to the wafer.
Optionally, the dry tack free processing includes using spin drying method or utilizes in the seasoning of isopropanol at least It is a kind of.
Optionally, microwave heating treatment is carried out before dry tack free processing.
Optionally, the microwave heating treatment and dry tack free processing are carried out at the same time.
Optionally, during the microwave heating treatment, emitted by microwave generator perpendicular to crystal column surface or inclination In the microwave of crystal column surface, make crystal column surface and internal hydrone simultaneously by microwave action.
Optionally, the microwave frequency that the microwave heating treatment uses is 915MHz~2450MHz.
Optionally, wafer is heated to temperature 50 C~200 DEG C by the microwave heating treatment.
Drying wafer method combination microwave heating treatment and the dry tack free processing of the present invention, at microwave heating Reason, is heated by the moisture to inside wafer and surface, improves the efficiency that inside wafer moisture evaporates outward, also, logical Dry tack free processing is crossed, crystal column surface is dried, and avoid washmarking defect, so as to improve the effect of drying wafer Rate.
Description of the drawings
Fig. 1 is the flow diagram of the drying wafer method of the embodiment of the invention.
Specific embodiment
It elaborates below in conjunction with the accompanying drawings to the specific embodiment of drying wafer method provided by the invention.
In the specific embodiment, the drying wafer method includes：
Step S101：Wafer to be dried is provided.
The wafer is the wafer after being cleaned in chip fabrication processes, and the wafer not only includes monocrystalline silicon piece, Further include the wafer that the single or multi-layer structures such as dielectric layer, device layer, metal interconnecting layer are formed on monocrystalline silicon piece.
In chip manufacturing proces, almost can all be related to cleaning step in each processing step so that crystal column surface with And inside can contain moisture.It needs thoroughly to dry wafer, can just be smoothed out next processing step.
Step S102：Microwave heating treatment is carried out to the wafer.
Wafer is heated using microwave first.Since hydrone is polar molecule, positive and negative charge in hydrone Center is misaligned, and from the point of view of molecule really, the distribution of charge is non-uniform, asymmetric.Polar molecule is in the feelings for having electric field Under condition, orientation can change with the variation of electric polarity, generate polarity effect.External electric field is stronger, and polarization is more apparent, dispatch from foreign news agency Field change in polarity is faster, and polarization is faster, and the rubbing action between the warm-up movement of molecule and adjacent molecule is also more violent, and then generates Thermal energy.
Microwave is exactly the electric field of high frequency variation, electromagnetic energy can be realized to heat polar molecule as uhf electromagnetic wave The conversion of energy.Therefore, when hydrone is by microwave action, microwave energy is absorbed by, and be converted into thermal energy.
Further, microwave heating treatment can cause inside wafer and external moisture to absorb microwave energy, moisture simultaneously Heating and the tangible whole wafer of evaporation in be carried out at the same time, the moisture of internal layer and outer layer heats simultaneously, be not in surface layer head It first dries and internal moisture is hindered to continue outer the problem of moving, so as to improve the efficiency of drying wafer.
During the microwave heating treatment, it can be emitted by microwave generator in the surface of wafer or underface and hung down Directly in the microwave of crystal column surface；Towards wafer and the microwave of crystal column surface can also be favoured in the side-emitted of wafer, make crystalline substance Circular surfaces and internal hydrone are simultaneously by microwave action.Since the wavelength of microwave is 1mm~1M, according to the size of wafer with And thickness, by adjusting the frequency of microwave so that microwave has suitable wavelength and penetrability, can so that microwave covering is entire Wafer, so as to integrally uniformly be heated to wafer.The quantity of the microwave generator and position can be according to wafers The actual conditions such as structure, are configured, and are not limited thereto.
In a specific embodiment, the microwave frequency that the microwave heating treatment uses for 915MHz~2450MHz, Microwave is enabled to cover whole wafer, and with higher penetrability, so as to be carried out at the same time uniformly to inside wafer and surface The rate of inside wafer moisture evaporation is accelerated in heating.
Since crystal column surface is likely to form with structures such as dielectric layer, semiconductor devices, the temperature of wafer heating cannot mistake Otherwise height can impact the material layer of crystal column surface.In the specific embodiment of the present invention, the microwave heating Wafer is heated to temperature 50 C~200 DEG C by processing.It, can be according to the tool of wafer in other specific embodiments of the present invention Body material structure rationally adjusts the energy of microwave and the time of microwave treatment, to adjust wafer in microwave heating treatment process In temperature.
Step S103：Dry tack free processing is carried out to the wafer.
Since inside wafer heat dissipation is slower, it will usually so that the temperature of inside wafer is higher than the height of crystal column surface, therefore Crystal column surface is reached, and be condensed into water droplet after the moisture evaporation of inside wafer.Therefore, can further to crystal column surface into The processing of row dry tack free to improve internal moisture to the rate of outside transfer, improves the efficiency of drying wafer, when saving dry Between.
The dry tack free processing can include：At least one of seasoning of spin drying method or utilization isopropanol.
The spin drying method includes：By wafer high speed rotation, using the centrifugal force generated under high speed rotation, and coordinate dry Water droplet on chip is spin-dried for by net airflow.Water droplet in irrigation canals and ditches (Deep trench) can also be inhaled according to bernoulli principle Go out, evaporation it is dry and without particle and washmarking.
It is described to be included using the seasoning of isopropanol：Moist wafer is placed in isopropanol (IPA) overflow deionized water (DIW) in slot.Carrier gas is imported the IPA liquid of heating, the IPA of high volatile is made to generate gaseous state IPA and is passed in slot；By wafer from Slow pull-up in overflow DIW slots will make the IPA concentration of crystal column surface flow into slot by IPA concentration differences water droplet in this way higher than liquid level It is interior, while the high volatile of IPA can dehydrate crystal column surface moisture.
Above-mentioned dry tack free processing can not only remove the moisture of crystal column surface, additionally it is possible to crystal column surface be avoided to generate washmarking Defect.
Spin drying method may be used or using any one or the two ways in the seasoning of isopropanol, to wafer into The processing of row dry tack free；Crystal column surface can also be dried processing using other suitable drying means.
In this specific embodiment, microwave heating treatment is first passed through so that inside wafer moisture, which is heated, is evaporated to wafer Then surface is handled by dry tack free again, crystal column surface is further dried.
In other specific embodiments, in order to improve drying wafer efficiency, drying time is saved, it can be by the microwave Heat treatment and dry tack free processing are carried out at the same time, and during microwave heating treatment, surface is evaporated to from internal wafer Moisture is handled by dry tack free and is dried in time, improves drying efficiency.
The present invention drying wafer method combination microwave heating treatment and dry tack free processing mode, to inside wafer with The moisture on surface is carried out at the same time drying, avoids wafer outer drying first in traditional drying mode and internal moisture is hindered to continue The problem of outer shifting, can improve dry efficiency, while reduce the probability of washmarking defect.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as Protection scope of the present invention.

Claims (7)

  1. A kind of 1. drying wafer method, which is characterized in that including：
    Wafer to be dried is provided；
    Microwave heating treatment is carried out to the wafer；
    Dry tack free processing is carried out to the wafer.
  2. 2. drying wafer method according to claim 1, which is characterized in that the dry tack free processing is included using rotation At least one of seasoning or the seasoning of utilization isopropanol.
  3. 3. drying wafer method according to claim 1, which is characterized in that carried out before dry tack free processing micro- Wave heating processing.
  4. 4. drying wafer method according to claim 1, which is characterized in that at the microwave heating treatment and dry tack free Reason is carried out at the same time.
  5. 5. drying wafer method according to claim 1, which is characterized in that during the microwave heating treatment, pass through Microwave generator emits perpendicular to crystal column surface or favours the microwave of crystal column surface, makes crystal column surface and internal hydrone same When by microwave action.
  6. 6. drying wafer method according to claim 1, which is characterized in that the Microwave Frequency that the microwave heating treatment uses Rate is 915MHz~2450MHz.
  7. 7. drying wafer method according to claim 1, which is characterized in that wafer is heated to by the microwave heating treatment Temperature 50 C~200 DEG C.
CN201711428448.3A 2017-12-26 2017-12-26 Drying wafer method Pending CN108266972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711428448.3A CN108266972A (en) 2017-12-26 2017-12-26 Drying wafer method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711428448.3A CN108266972A (en) 2017-12-26 2017-12-26 Drying wafer method

Publications (1)

Publication Number Publication Date
CN108266972A true CN108266972A (en) 2018-07-10

Family

ID=62772557

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711428448.3A Pending CN108266972A (en) 2017-12-26 2017-12-26 Drying wafer method

Country Status (1)

Country Link
CN (1) CN108266972A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111276422A (en) * 2018-12-04 2020-06-12 南亚科技股份有限公司 Semiconductor wafer drying apparatus and method
CN111383946A (en) * 2018-12-29 2020-07-07 中国科学院微电子研究所 Nano-pattern rapid curing device
CN111383909A (en) * 2018-12-29 2020-07-07 中国科学院微电子研究所 Method for curing nano-pattern structure under assistance of electromagnetic waves
CN111380331A (en) * 2018-12-29 2020-07-07 中国科学院微电子研究所 Microwave drying device
CN111739829A (en) * 2020-08-26 2020-10-02 华海清科(北京)科技有限公司 Wafer drying method and system

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1405847A (en) * 2001-06-30 2003-03-26 三星电子株式会社 Anti-adsorption method for drying crystal wafer using centrifugal force and apparatus thereof
CN101093135A (en) * 2006-06-20 2007-12-26 力晶半导体股份有限公司 Liquid dehumidification system, and safety system of monitoring and controlling liquid level of flux
CN101393852A (en) * 2008-11-11 2009-03-25 武汉工程大学 Method for cleaning semiconductor wafer
CN101405832A (en) * 2006-03-13 2009-04-08 Rec斯坎沃佛股份有限公司 Method for separating wafers from a stack of wafers
CN101599423A (en) * 2008-06-04 2009-12-09 株式会社荏原制作所 Substrate board treatment and method, substrate grasping mechanism and substrate grasping method
CN102064090A (en) * 2010-10-15 2011-05-18 北京通美晶体技术有限公司 Method for cleaning compound semiconductor chip
CN102929110A (en) * 2012-11-06 2013-02-13 中国科学院微电子研究所 Device and method for supercritical drying of microwave excitation
CN104848668A (en) * 2014-02-17 2015-08-19 上海雄汉实业有限公司 Wafer drying system
CN204630252U (en) * 2015-04-14 2015-09-09 昆明理工大学 A kind of microwave vacuum drying device
CN204923709U (en) * 2015-07-09 2015-12-30 亚邦国际科技股份有限公司 Drying device of useless filter cake of silicon wafer cutting
CN106288710A (en) * 2015-06-01 2017-01-04 上海雄汉实业有限公司 A kind of drying system in optical filter production technology

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1405847A (en) * 2001-06-30 2003-03-26 三星电子株式会社 Anti-adsorption method for drying crystal wafer using centrifugal force and apparatus thereof
CN101405832A (en) * 2006-03-13 2009-04-08 Rec斯坎沃佛股份有限公司 Method for separating wafers from a stack of wafers
CN101093135A (en) * 2006-06-20 2007-12-26 力晶半导体股份有限公司 Liquid dehumidification system, and safety system of monitoring and controlling liquid level of flux
CN101599423A (en) * 2008-06-04 2009-12-09 株式会社荏原制作所 Substrate board treatment and method, substrate grasping mechanism and substrate grasping method
CN101393852A (en) * 2008-11-11 2009-03-25 武汉工程大学 Method for cleaning semiconductor wafer
CN102064090A (en) * 2010-10-15 2011-05-18 北京通美晶体技术有限公司 Method for cleaning compound semiconductor chip
CN102929110A (en) * 2012-11-06 2013-02-13 中国科学院微电子研究所 Device and method for supercritical drying of microwave excitation
CN104848668A (en) * 2014-02-17 2015-08-19 上海雄汉实业有限公司 Wafer drying system
CN204630252U (en) * 2015-04-14 2015-09-09 昆明理工大学 A kind of microwave vacuum drying device
CN106288710A (en) * 2015-06-01 2017-01-04 上海雄汉实业有限公司 A kind of drying system in optical filter production technology
CN204923709U (en) * 2015-07-09 2015-12-30 亚邦国际科技股份有限公司 Drying device of useless filter cake of silicon wafer cutting

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111276422A (en) * 2018-12-04 2020-06-12 南亚科技股份有限公司 Semiconductor wafer drying apparatus and method
CN111383946A (en) * 2018-12-29 2020-07-07 中国科学院微电子研究所 Nano-pattern rapid curing device
CN111383909A (en) * 2018-12-29 2020-07-07 中国科学院微电子研究所 Method for curing nano-pattern structure under assistance of electromagnetic waves
CN111380331A (en) * 2018-12-29 2020-07-07 中国科学院微电子研究所 Microwave drying device
CN111739829A (en) * 2020-08-26 2020-10-02 华海清科(北京)科技有限公司 Wafer drying method and system
CN111739829B (en) * 2020-08-26 2020-11-17 华海清科(北京)科技有限公司 Wafer drying method and system

Similar Documents

Publication Publication Date Title
CN108266972A (en) Drying wafer method
JP6242057B2 (en) Substrate processing equipment
JP6242056B2 (en) Substrate processing equipment
US20140231012A1 (en) Substrate processing apparatus
US20200303201A1 (en) Substrate processing device and substrate processing method for carrying out chemical treatment for substrate
US9543162B2 (en) Substrate processing method
KR102101573B1 (en) Substrate treatment method and substrate treatment device
CN102929110B (en) Device and method for supercritical drying of microwave excitation
JP2014157935A (en) Substrate processing apparatus
JP6397095B2 (en) Substrate processing equipment
TWI501343B (en) Substrate treatment apparatus and substrate treatment method
JP6642868B2 (en) Substrate processing method and substrate processing apparatus
JP6221155B2 (en) Substrate processing method and substrate processing apparatus
JP2013065623A (en) Substrate processing apparatus and manufacturing method of semiconductor device
TW202004109A (en) Rapid wafer drying using induction heating
CN101405832A (en) Method for separating wafers from a stack of wafers
JP2016143873A (en) Substrate processing method and substrate processing device
CN107910246A (en) Lower wall method for inp wafer
JPS62245639A (en) Vapor drying device
KR101570676B1 (en) Rinsing and drying device of chemical mechanical polishing system
JPH0468773B2 (en)
CN116351812A (en) Pipeline cleaning method and application method thereof
WO2013179568A1 (en) Method for drying silicon wafer
JPS63133634A (en) Method of drying substrate
CN102736434B (en) A kind of formation method encapsulating pattern

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20180710

RJ01 Rejection of invention patent application after publication