CN111373328B

CN111373328B - Porous graphite surface film

Info

Publication number: CN111373328B
Application number: CN201880075083.7A
Authority: CN
Inventors: 马克西姆·A·纳萨勒维奇; E·库尔干诺娃; A·W·诺滕博姆; 玛丽亚·皮特; 彼得-詹·范兹沃勒; D·F·弗莱斯
Original assignee: ASML Holding NV
Current assignee: ASML Holding NV
Priority date: 2017-11-21
Filing date: 2018-11-07
Publication date: 2023-06-09
Anticipated expiration: 2038-11-07
Also published as: CN111373328A; JP7252950B2; TW201932988A; NL2021947A; JP2021504731A; EP3714330A1; NL2023649B1; KR20200087774A; NL2023649A; NL2021947B1; WO2019101517A1; NL2021947B9

Abstract

A method of manufacturing a pellicle for a lithographic apparatus, the method comprising growing the pellicle in a three-dimensional template, and a pellicle manufactured according to the method. The use of a pellicle produced according to the method in an EUV lithographic apparatus and the use of a three-dimensional template in the production of a pellicle are also disclosed.

Description

Porous graphite surface film

Cross Reference to Related Applications

The present application claims priority from european application 17202767.4 filed on 2017, 11, 21, which is incorporated herein by reference in its entirety.

Technical Field

The present invention relates to a method of manufacturing a pellicle for a lithographic apparatus, to the use of a pellicle manufactured according to the manufacturing method, to the use of a three-dimensional template for manufacturing a pellicle for a lithographic apparatus, and to a pellicle for a lithographic apparatus.

Background

A lithographic apparatus is a machine that is configured to apply a desired pattern onto a substrate. Lithographic apparatus can be used, for example, in the manufacture of Integrated Circuits (ICs). The lithographic apparatus may, for example, project a pattern from a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) disposed on a substrate.

The wavelength of radiation used by a lithographic apparatus to project a pattern onto a substrate determines the smallest dimension of a feature that can be formed on the substrate. Lithographic apparatus using EUV radiation (electromagnetic radiation having a wavelength in the range of 4-20 nm) may be used to form smaller features on a substrate than conventional lithographic apparatus (which may, for example, use electromagnetic radiation having a wavelength of 193 nm).

The lithographic apparatus includes a patterning device (e.g., a mask or a reticle). Radiation is provided through or reflected from the patterning device to form an image on the substrate. A pellicle may be provided to protect the patterning device from airborne particles and other forms of contamination. Contamination on the surface of the patterning device may cause manufacturing defects on the substrate.

A pellicle may also be provided for protecting optical components other than the patterning device. A pellicle may also be used to provide a path for lithographic radiation between regions of the lithographic apparatus that are sealed from each other. The pellicle may also be used as a filter, such as a spectral purity filter. Because of the sometimes harsh environment inside lithographic apparatus, especially EUV lithographic apparatus, it is desirable that the pellicle exhibits excellent chemical and thermal stability.

Known pellicle films may include, for example, free standing diaphragms such as silicon diaphragms, silicon nitride, graphene or graphene derivatives, carbon nanotubes or other diaphragm materials. The mask assembly may include the pellicle that protects a patterning device (e.g., a mask) from particulate contaminants. The pellicle may be supported by a pellicle frame to form a pellicle assembly. The pellicle may be attached to the frame, for example, by gluing a pellicle border region to the frame. The frame may be permanently or releasably attached to the patterning device.

During use, the temperature of the pellicle in the lithographic apparatus increases to any temperature from about 500 ℃ up to 1000 ℃ or higher. These high temperatures can damage the pellicle, and thus it is desirable to improve the heat dissipation to reduce the operating temperature of the pellicle and improve the pellicle life.

It has been found that the lifetime of carbon-containing films (such as films comprising freestanding graphene or other carbon-based films) may be limited, and carbon-containing films may suffer from certain disadvantages when used in lithographic apparatus.

The graphene pellicle comprises one or more parallel thin graphene layers. Such a pellicle, for example, having a thickness of about 6nm to about 10nm, may exhibit a relatively high density. Due to the structure of such graphene films, the uniformity of EUV radiation transmitted through the film is not substantially altered. However, depending on the manner in which the graphene films are manufactured, some graphene films may have relatively low mechanical strength. Although graphene is one of the strongest materials known (if not the strongest material), roughness on the surface of the graphene layer caused by the substrate from which the graphene film is produced can negatively impact the strength of the film. During use of the pellicle, the lithographic apparatus in which the pellicle is used may be purged with a gas. Moreover, during exposure, the pellicle will experience a considerable thermal load from EUV radiation. If the pellicle is not strong enough, this factor-induced stress variation of the pellicle can lead to pellicle damage. The pellicle may damage and contaminate various components of the lithographic apparatus, which is undesirable.

Another type of carbon-containing pellicle is based on carbon nanotubes. Such a pellicle does not have the same dense, parallel layer structure as a multilayer graphene pellicle, but is formed of a network of reticulated carbon nanotubes. The boundaries of the carbon nanotube-based films are less well defined than the boundaries of the multi-layer graphene films, and the carbon nanotubes may alter the uniformity of the radiation beam passing through the films, for example, due to scattering. This is undesirable because variations in the uniformity of the radiation beam can be reflected in the final product. In cases where extremely high precision is required for the lithographic apparatus, even small differences in the uniformity of the radiation beam can lead to reduced exposure performance. However, the carbon nanotube-based films have the benefit of: the pellicle is strong, and therefore can meet the strength requirements for use in lithographic apparatus.

It is therefore desirable to provide a method for manufacturing a carbon-containing pellicle that is strong enough to be used in a lithographic apparatus, such as an EUV lithographic apparatus, having a high EUV transmittance, for example, above 90%, and that does not adversely affect the uniformity of the radiation beam passing through the pellicle.

Although the present application relates generally to pellicle in the context of lithographic apparatus, in particular EUV lithographic apparatus, the invention is not limited to pellicle and lithographic apparatus only, it being understood that the subject matter of the invention may be used in any other suitable apparatus or situation.

For example, the method of the present invention is equally applicable to spectral purity filters. Indeed, EUV sources (such as those that use plasma to generate EUV radiation) emit not only the desired "in-band" EUV radiation, but also undesired (out-of-band) radiation. Such out-of-band emissions are most notably in the Deep UV (DUV) radiation range (from 100 to 400 nanometers). Furthermore, in the case of some EUV sources (e.g., laser produced plasma EUV sources), the radiation from the laser (e.g., at 10.6 microns) may be a source of substantial out-of-band radiation (e.g., IR radiation).

In a lithographic apparatus, spectral purity may be desirable for several reasons. One reason is that resists are sensitive to out-of-band wavelengths of radiation, and thus, if the resist is exposed to such out-of-band radiation, the image quality of the exposure pattern applied to the resist may deteriorate. Furthermore, out-of-band radiation (e.g., infrared radiation in some laser-produced plasma sources) results in unwanted and unnecessary heating of the patterning device, substrate, and optics within the lithographic apparatus. Such heating may result in damage to the elements, degradation of their useful life, and/or defects or distortions in the pattern projected onto and applied to the resist-coated substrate.

The spectral purity filter may be used as a pellicle, and a pellicle may also be used as a spectral purity filter. Thus, references to "pellicle" in this application are also references to "spectral purity filter". Although reference is made primarily to pellicle film in this application, all features are equally applicable to spectral purity filters.

In a lithographic apparatus (and/or method), it is desirable to minimize the loss of intensity of radiation used to apply a pattern to a resist-coated substrate. One reason for this is: ideally, as much radiation as possible should be available to apply the pattern to the substrate, for example to reduce exposure time and increase throughput. At the same time, it is desirable to minimize the amount of undesired radiation (e.g., out-of-band radiation) that passes through the lithographic apparatus and is incident on the substrate. Furthermore, it is desirable to ensure that a pellicle used in a lithographic method or apparatus has a sufficient lifetime without rapidly deteriorating over time due to the high thermal load to which the pellicle may be exposed and/or the hydrogen gas to which the pellicle may be exposed (etc., such as radical species, including H and HO). It is therefore desirable to provide an improved (or alternative) pellicle, and for example a pellicle suitable for use in a lithographic apparatus and/or method.

Disclosure of Invention

The present invention has been made in view of the known methods of manufacturing a pellicle and the aforementioned problems of the known pellicle.

According to a first aspect of the invention, there is provided a method of manufacturing a pellicle for a lithographic apparatus, the method comprising: the pellicle is grown in a three-dimensional template material.

Known carbon-based films are currently actually based on solid layered two-dimensional materials. For example, a graphene pellicle includes a plurality of graphene layers. Similarly, silicon topcoats are fabricated on solid silicon wafers, which may or may not be coated with other protective cap layer materials, such as metals. Thus, these pellicle materials grow as a layer on a surface, which is two-dimensional and solid; or have very small voids (i.e., low porosity) therein. On the other hand, carbon nanotube-based films include an disordered network of carbon nanotubes having a substantial void space within them, but are disordered, which has a negative effect on the uniformity of the radiation beam passing through due to scattering. It is desirable to provide a pellicle having a regular and well-defined three-dimensional structure.

It has been found that the fabrication of a pellicle within a three-dimensional template provides a pellicle having a regular and well-defined three-dimensional structure. The structure of the pellicle produced according to the method of the invention is also porous, as is the case for carbon nanotube pellicle, but has a relatively regular and well-defined three-dimensional structure that provides sufficient strength for use in a lithographic apparatus, and provides sufficient flexibility to accommodate changes in temperature and stress on the pellicle. Surprisingly, it was found that the resulting pellicle has an acceptable EUV transmittance of greater than 90% and does not adversely affect the uniformity of the radiation beam passing therethrough.

The three-dimensional template may be a zeolite. Zeolites are microporous aluminosilicate materials that are commonly used as adsorbents and catalysts. These zeolites have a regular internal pore structure into which small molecules can enter.

The zeolite may be any suitable zeolite. For example, the zeolite may be zeolite a, zeolite beta, mordenite, zeolite Y, or chabazite. These zeolites are the most commonly used and readily available zeolites, but it will be appreciated that other zeolites are also considered suitable for the present invention.

The zeolite may be a modified zeolite. The modified zeolite may comprise a zeolite which has been doped with a suitable material. Suitable materials include one or more of lanthanum, zinc, molybdenum, yttrium, calcium, tungsten, vanadium, titanium, niobium, chromium, tantalum, and hafnium. It has surprisingly been found that by doping the zeolite with one or more of these elements, the temperature at which carbonization can occur within the pores of the zeolite is reduced. Doping can be by any suitable means, such as ion exchange. For example, sodium ions in the zeolite may be exchanged with lanthanum ions.

The method comprises providing a carbon source, preferably a gaseous carbon source. The carbon source may be transferred into the material of the three-dimensional template. Because the three-dimensional template includes an internal network of pores, the carbon source material is able to infiltrate into the three-dimensional template.

The carbon source may be a saturated or unsaturated C1 to C4 hydrocarbon. Hydrocarbons having more than 4 carbon atoms may be used, but the adsorption process is slower because these hydrocarbons are liquid at ambient temperature. Of course, longer chain hydrocarbons may be used if absorption into the three-dimensional template occurs at a temperature above ambient. The hydrocarbon is preferably linear.

Examples of suitable carbon sources include methane, ethane, ethylene, acetylene, propane, propylene, propadiene, propyne, butane, butene, butadiene, ding Sanxi, and butyne. Since carbon sources are intended primarily for providing carbon, the use of unsaturated hydrocarbons is preferred, as these unsaturated hydrocarbons have a favorable hydrocarbon ratio and are more reactive than saturated hydrocarbons. For example, acetylene is a preferred carbon source because acetylene is the most reactive and also smaller and therefore can readily diffuse into the three-dimensional template.

The method may include heating the three-dimensional template material to a first temperature to carbonize the carbon source. Once the carbon source has been transferred into the internal pores of the three-dimensional template, heating the material carbonizes the carbon source. The carbonization process is enhanced by the aforementioned doping of the three-dimensional material with metal ions. The metal ions are selected because they form strong carbide bonds. Without doping, the temperatures required to carbonize the carbon source are much greater, resulting in carbon formation only on the surface of the three-dimensional template and not in a carbon-containing network that substantially corresponds to the internal pore structure of the three-dimensional material containing the carbon source.

The first temperature may be from about 350 ℃ to about 800 ℃, preferably about 650 ℃. Without doping, carbonization requires temperatures in excess of 800 ℃.

The three-dimensional material may then be heated to a second temperature that is higher than the first temperature. The second temperature may be about 850 ℃ or greater. Heating to a higher second temperature causes the carbon to become more highly ordered and thus the carbon to become stronger.

Once the heating has been completed, the (retrieve) carbonaceous pellicle is restored or retrieved by dissolving the three-dimensional template. In the case where the three-dimensional template is a zeolite, the zeolite may be dissolved by exposure to a strong acid, such as hydrochloric acid or hydrofluoric acid, and may be subsequently exposed to a hot alkaline solution, such as sodium hydroxide. The exact method used to dissolve the zeolite is not limited to the examples given, and any suitable method that dissolves the zeolite while leaving behind a carbon-containing pellicle may be used.

The three-dimensional material may be prepared from a silicon wafer by known means. Preferably, the silicon wafer is monocrystalline silicon. Preparation from silicon wafers allows control of the exact thickness and properties of the zeolite. Thus, different zeolites may be prepared, some of which have larger pores and others of which have smaller pores, depending on the exact nature of the desired pellicle.

A portion of the surface of the silicon wafer may be converted into a zeolite material, or a zeolite material may be prepared on the surface of the silicon wafer. Two techniques are known in the art. The zeolite may have a thickness of from about 50nm to about 150nm, from about 80nm to about 120nm, preferably about 100nm. If the zeolite is too thin, the thickness of the resulting pellicle may not be sufficient to have the necessary strength for use in an EUV lithographic apparatus. On the other hand, if the zeolite is too thick, the resulting pellicle may be too thick and have an undesirably low EUV transmittance, such as, for example, less than 90%. The exact thickness of the pellicle can be achieved by removing material from the pellicle until the desired thickness is met.

According to a second aspect of the present invention there is provided the use of a three-dimensional template in the manufacture of a pellicle.

As described above, the currently known pellicle is manufactured by forming a two-dimensional layer on a surface. There is no known pellicle produced inside the three-dimensional template. The use of a three-dimensional template would allow the formation of a pellicle with an extremely regular and predictable structure. The resulting pellicle is stronger than existing graphene pellicle films and does not cause unwanted diffraction or scattering of the radiation beam as is the case with carbon nanotube-based pellicle films.

The three-dimensional template may be any zeolite described in relation to the first aspect of the invention.

According to a third aspect of the present invention, there is provided a three-dimensional template for use in the manufacture of a pellicle.

Preferably, the pellicle is a carbon-containing pellicle.

Preferably, the three-dimensional template is a zeolite as described in relation to the first aspect of the invention.

According to a fourth aspect of the present invention there is provided a pellicle having a three-dimensional structure substantially corresponding to the internal pore structure of a zeolite. The pellicle is preferably carbon-containing.

Since there is no known pellicle produced using a three-dimensional template, there is no known pellicle having a three-dimensional structure substantially corresponding to the internal pore structure of zeolite. As described above, this provides a pellicle that is strong and does not interfere with the uniformity of the radiation beam passing through the pellicle.

According to a fifth aspect of the invention, there is provided a pellicle for a lithographic apparatus, obtainable by or obtainable by a method according to the first aspect of the invention.

Because of the limitations of known methods of producing pellicle and the absence of any pellicle produced using a three-dimensional template, heretofore, there has been no way to produce a pellicle of sufficient strength to have a regular three-dimensional ordering for use in a lithographic apparatus.

According to a sixth aspect of the present invention there is provided the use of a pellicle in a lithographic apparatus, the pellicle being manufactured by a method according to the first aspect, or the pellicle being according to the fourth or fifth aspect of the present invention.

In summary, the method of the invention allows the manufacture of pellicle films, in particular carbon-containing pellicle films, suitable for use in EUV lithographic apparatus. It has not been possible to manufacture such a pellicle. The pellicle produced according to the method of the present invention is resistant to the high temperatures reached when the pellicle is in use and also resistant to mechanical forces on the pellicle that would damage the known pellicle during use of the lithographic apparatus. In addition, a pellicle having a regular three-dimensional structure means that the uniformity of the radiation beam is not adversely affected as the beam passes through the pellicle. It is believed that the three-dimensional structure, which corresponds substantially to the internal pore structure of the zeolite, provides the following pellicle: which is strong enough to be used in a lithographic apparatus and flexible enough to withstand any temperature and/or pressure changes during use.

The invention will now be described with reference to carbon-containing films formed within the pore structure of zeolites. However, it should be understood that the invention is not limited to pellicle films, and that the invention is equally applicable to spectral purity filters. In addition, the present invention may also be used in charge storage devices, such as batteries or capacitors, due to the high surface area of the resulting material. Thus, although the methods, uses and products are described in the context of pellicle and photolithography, it should be appreciated that such methods, uses and products may also be used in the manufacture of components for batteries and capacitors.

Drawings

Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which:

FIG. 1 depicts a lithographic system comprising a lithographic apparatus and a radiation source according to an embodiment of the invention.

Detailed Description

Fig. 1 shows a lithography system comprising a pellicle 15 according to the fourth and fifth aspects of the invention or a pellicle 15 manufactured according to the method of the first aspect of the invention, according to one embodiment of the invention. The lithographic system includes a radiation source SO and a lithographic apparatus LA. The radiation source SO is configured to generate an Extreme Ultraviolet (EUV) radiation beam B. The lithographic apparatus LA comprises: an illumination system IL, a support structure MT configured to support a patterning device MA (e.g. a mask), a projection system PS, and a substrate table WT configured to support a substrate W. The illumination system IL is configured to condition the radiation beam B before it is incident on the patterning device MA. The projection system is configured to project a radiation beam B (now patterned by a mask MA) onto a substrate W. The substrate W may include a previously formed pattern. In this case, the lithographic apparatus aligns the patterned beam of radiation B with a pattern previously formed on the substrate W. In such an embodiment, the pellicle 15 is depicted in the path of the radiation and protects the patterning device MA. It will be appreciated that the pellicle 15 may be positioned in any desired location and may be used to protect any of the mirrors in the lithographic apparatus.

The radiation source SO, the illumination system IL, and the projection system PS may be constructed and arranged SO that they are isolated from the external environment. A gas (e.g. hydrogen) at a sub-atmospheric pressure may be provided in the radiation source SO. A vacuum may be provided in the illumination system IL and/or the projection system PS. A small amount of gas (e.g., hydrogen) at a pressure well below atmospheric pressure may be provided in the illumination system IL and/or the projection system PS.

The radiation source SO shown in fig. 1 is of a type which may be referred to as a Laser Produced Plasma (LPP) source. The laser 1 (which may be CO, for example ₂ A laser) is arranged to deposit energy into the fuel, such as tin (Sn) provided from the fuel emitter 3, via the laser beam 2.Although tin is mentioned in the following description, any suitable fuel may be used. The fuel may, for example, be in liquid form and may, for example, be a metal or alloy. The fuel emitter 3 may comprise a nozzle configured to direct tin, for example in the form of droplets, along a trajectory towards the plasma formation zone 4. The laser beam 2 is incident on tin at the plasma formation region 4. Laser energy is deposited into the tin, generating a plasma 7 at the plasma formation region 4. During de-excitation and recombination of ions of the plasma, radiation, including EUV radiation, is emitted from the plasma 7.

EUV radiation is collected and focused by a near normal incidence radiation collector 5 (sometimes more generally referred to as a normal incidence radiation collector). The collector 5 may have a multi-layered structure arranged to reflect EUV radiation (e.g. EUV radiation having a desired wavelength such as 13.5 nm). The collector 5 may have an elliptical configuration with two elliptical foci. The first focus may be at the plasma formation region 4 and the second focus may be at the intermediate focus 6, as described below.

The laser 1 may be separated from the radiation source SO. In this case, the laser beam 2 may be transferred from the laser 1 to the radiation source SO by means of a beam delivery system (not shown) comprising, for example, suitable directing mirrors and/or beam expanders, and/or other optics. The laser 1 and the radiation source SO may together be considered as a radiation system.

The radiation reflected by the collector 5 forms a radiation beam B. The radiation beam B is focused at a location 6 to form an image of the plasma formation region 4, which serves as a virtual radiation source for the illumination system IL. The point 6 at which the radiation beam B is focused may be referred to as an intermediate focus. The radiation source SO is arranged such that the intermediate focus 6 is located at or near an opening 8 in a closed structure 9 of the radiation source.

The radiation beam B passes from the radiation source SO into the illumination system IL, which is configured to condition the radiation beam. The illumination system IL may include a facet field mirror device 10 and a facet pupil mirror device 11. Together, facet field mirror device 10 and facet pupil mirror device 11 provide a desired cross-sectional shape and a desired angular distribution for radiation beam B. The radiation beam B is delivered from the illumination system IL and is incident on the patterning device MA, which is held by the support structure MT. The patterning device MA reflects the radiation beam B and patterns the radiation beam B. The illumination system IL may include other mirrors or devices in addition to or in place of facet field mirror device 10 and facet pupil mirror device 11.

After reflection from patterning device MA, patterned radiation beam B enters projection system PS. The projection system includes a plurality of

mirrors

13, 14 configured to project a radiation beam B onto a substrate W held by the substrate table WT. The projection system PS can apply a demagnification factor to the radiation beam to form an image having features smaller than corresponding features on the patterning device MA. For example, a reduction factor of 4 may be applied. Although the projection system PS has two

mirrors

13, 14 in fig. 1, the projection system may include any number of mirrors (e.g., six mirrors).

The radiation source SO shown in fig. 1 may comprise components not shown. For example, a spectral filter may be provided in the radiation source. The spectral filter may be substantially transmissive to EUV radiation, but substantially blocking radiation of other wavelengths, such as infrared radiation.

In an exemplary method according to the present invention, a three-dimensional template in the form of a zeolite is provided. This may have been formed on the basis of a silicon wafer or by any other suitable means. An exemplary zeolite is zeolite-Y, wherein at least a portion of the sodium ions have been ion-exchanged with lanthanum via ion exchange. A carbon source including acetylene gas is passed through the zeolite, allowing the acetylene gas to diffuse into the internal pores of the zeolite. The zeolite is heated to about 650 ℃ in order to carbonize the acetylene gas and form a carbon structure inside the zeolite, which substantially corresponds to the internal structure of the zeolite. After this, the zeolite is heated to about 850 ℃ to provide a more highly ordered carbon-containing pellicle. The zeolite is then dissolved by dissolution in hydrofluoric acid to recover the pellicle.

In this way, it is possible to control the structure of the resulting pellicle and use different zeolites having different sizes to modify the exact structure of the pellicle. The resulting pellicle has an EUV transmittance of greater than 90%, which is strong enough to be used in a lithographic apparatus.

The term "EUV radiation" may be considered to include electromagnetic radiation having a wavelength in the range of 4-20nm, for example in the range of 13-14 nm. EUV radiation may have a wavelength of less than 10nm, for example a wavelength in the range of 4-10nm, such as a wavelength of 6.7nm or 6.8 nm.

While specific embodiments of the invention have been described above, it should be appreciated that the invention may be practiced otherwise than as described. The above description is intended to be illustrative, and not restrictive. Accordingly, it will be apparent to those skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.

Claims

1. A method of manufacturing a pellicle for a lithographic apparatus, the method comprising: the pellicle is grown in a three-dimensional template,

wherein the template is a zeolite, and,

the pellicle has an EUV transmittance of greater than 90%.

2. The method of claim 1, wherein the zeolite is selected from the group consisting of zeolite a, zeolite beta, mordenite, zeolite Y, ZSM-5, and chabazite.

3. The method of claim 1 or claim 2, wherein the zeolite is a modified zeolite, wherein the modified zeolite comprises a zeolite doped with one or more of lanthanum, zinc, molybdenum, yttrium, calcium, tungsten, vanadium, titanium, niobium, chromium, tantalum, and hafnium.

4. The method according to any of the preceding claims, the method comprising: providing a carbon source and passing the carbon source into the material of the three-dimensional template, wherein the gaseous carbon source comprises at least one saturated or unsaturated C1 to C4 hydrocarbon.

5. The method of claim 4, wherein the gaseous carbon source comprises at least one of methane, ethane, ethylene, acetylene, propane, propylene, propadiene, propyne, butane, butene, butadiene, ding Sanxi, and butyne.

6. The method of claim 4 or 5, wherein the method comprises heating the three-dimensional template to a first temperature to carbonize the carbon source, wherein the first temperature is from about 350 ℃ to about 800 ℃.

7. The method of claim 6, wherein the three-dimensional template is heated to a second temperature that is higher than the first temperature.

8. The method of claim 6 or 7, wherein the three-dimensional template is dissolved to release a carbon-containing pellicle.

9. The method of claim 8, wherein the three-dimensional template is dissolved by exposing the three-dimensional template to a strong acid.

10. The method of any one of the preceding claims, wherein the three-dimensional template is produced by using silicon wafers, wherein at least a portion of the silicon wafers are converted to zeolite, or wherein a zeolite film is deposited on the surface of the silicon wafers.

11. Use of a three-dimensional template in the manufacture of a pellicle, wherein the three-dimensional template is configured to manufacture the pellicle with an EUV transmittance of greater than 90%, wherein the three-dimensional template is a modified zeolite that has been doped with one or more of lanthanum, zinc, molybdenum, yttrium, calcium, tungsten, vanadium, titanium, niobium, chromium, tantalum, and hafnium.

12. A three-dimensional template for use in manufacturing a pellicle, wherein the three-dimensional template is configured to manufacture the pellicle with an EUV transmittance of greater than 90%, wherein the template comprises a zeolite, wherein the zeolite is doped with one or more of lanthanum, zinc, molybdenum, yttrium, calcium, tungsten, vanadium, titanium, niobium, chromium, tantalum, and hafnium.

13. A pellicle having a three-dimensional structure substantially corresponding to the internal pore structure of a zeolite,

wherein the pellicle is carbon-containing, and

the pellicle has an EUV transmittance of greater than 90%.