CN111371293A - IGBT drive circuit with state monitoring and fault recording functions - Google Patents
IGBT drive circuit with state monitoring and fault recording functions Download PDFInfo
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- H—ELECTRICITY
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- G08B21/185—Electrical failure alarms
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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Abstract
The invention relates to an IGBT driving circuit with state monitoring and fault recording functions, which comprises a logic control module, a fault monitoring module, an optical fiber interface and a power supply module, wherein the logic control module is used for controlling the state of the IGBT driving circuit; the logic control module comprises: a logic control circuit and a gate power amplifying circuit; the fault monitoring module comprises a fault detection circuit and a signal processing circuit; according to the invention, functions such as state monitoring and the like are integrated into the IGBT driving circuit, so that the working state of the IGBT can be obtained within the first time, the multi-stage detection consisting of a plurality of comparators can realize the fault identification and state monitoring of the IGBT, and the judgment and alarm are made in advance for the degradation failure, so that the system paralysis caused by the degradation failure of the IGBT module is avoided, and compared with an offline test and a quasi-online test, the operation is convenient and the cost is lower; the accumulated short-circuit fault times are recorded and output through the logic control chip, the power failure data of the chip are not lost, and a research basis is provided for residual life prediction and health management in the whole life cycle of the IGBT.
Description
Technical Field
The invention relates to a fault monitoring technology of an IGBT (insulated gate bipolar transistor) driving circuit, in particular to an IGBT driving circuit with state monitoring and fault recording functions.
Background
Power electronic devices complement the development of power electronic technology. At present, power devices have become indispensable devices for industrial applications, and play a key role in energy conversion and power electronics. An Insulated Gate Bipolar Transistor (IGBT) is taken as a most representative power device, combines the advantages of an MOSFET and a GTR, and has the advantages of high switching frequency, convenience in control, high input impedance, high withstand voltage, small loss and the like. As a core component of the system, the IGBT is widely applied to medium and high power electronic systems such as a multi-level inverter, high-voltage direct current transmission, a wind power converter, a photovoltaic inverter and the like. . With the development of new structures and new processes of power devices, the power level, power density and switching frequency of the IGBT are also continuously improved, the voltage range is 600V-6500V, the current range is 1A-4500A, and the IGBT is mainly applied in the frequency range of 1-100 kHz. In addition, silicon (Si) is generally used in the mainstream high-power IGBT at present, but due to material limitations, the device performance of the IGBT is already close to the theoretical limit, so research and application of novel materials such as silicon carbide (SiC) and gallium nitride (GaN) is becoming an inevitable trend.
The IGBT driving technology has been developed along with the development of IGBT devices. Since the IGBT becomes the first power device of various inverters, how to drive the inverter to work safely and reliably becomes a research hotspot of domestic and foreign scholars. The driving circuit mainly has the functions of carrying out isolated transmission and power amplification on the control signal. In addition, due to the requirement of the operating environment of the IGBT, it is also necessary to provide a perfect protection function, which mainly includes: short-circuit protection, overvoltage protection, power supply undervoltage protection, over-temperature protection and the like. When the system has faults such as short circuit, overvoltage, overtemperature and the like, the fault can be timely and accurately detected, and the IGBT can be safely and quickly turned off so as to ensure the safe operation of the power system, wherein the short circuit detection protection function is particularly important. At present, companies such as CONCEPT, Saimi accuse, Feishi, bronze sword, etc. at home and abroad have already provided products with more perfect functions. With the continuous improvement of application requirements, the IGBT driving circuit is required to have driving and protecting functions in the future, and meanwhile, the IGBT driving circuit has real-time state monitoring and fault recognition functions on the IGBT module, so that early warning can be effectively carried out on the failure of the IGBT module, the reliability and the safety of the use of the module are improved, and the service life of a device is prolonged.
However, as shown in FIG. 1[1]The power device is also the component with the highest failure rate in the converter system, and accounts for about 30%, and then the fault of the PCB, the fault of the capacitor, the fault of the welding part and the like are carried out in sequence. The failure of the IGBT can be caused by three reasons, the first is failure caused by processing and manufacturing, process defects or internal material and design defects, the second is failure caused by external stress (such as thermal stress, electrical stress, mechanical stress, radiation stress, etc.), and the third is failure caused by other parts of the circuit, such as a control driving circuit, a filter circuit, etc. In practical application, because the power converter operates for a long time, the IGBT module finally degrades and finally fails under the action of external stress no matter under a fault working condition or a normal working condition. In the life cycle of the IGBT, due to the continuous accumulation of damage, the performance parameters of the IGBT are also continuously decreased, thereby causing the gradual degradation of the system function, and finally causing the system to malfunction or even shut down, which brings about huge losses of manpower and material resources.
At present, a great deal of research shows that the performance degradation or failure of the IGBT module can cause the parameters to change, i.e., there is a rather close relationship between the degradation failure and the state parameters of the IGBT module. As shown in fig. 2[2]When the IGBT module ages, its equivalent parasitic resistance increases, resulting in a saturated on-state voltage drop V of the module at the same collector currentce(sat)Will gradually increase.
Thus, by monitoringAnd the state parameters representing the health state of the IGBT module extract aging information in real time, and provide basis for life prediction and health management of the IGBT module so as to carry out fault early warning and replacement and maintenance in advance. Currently, the degradation failure of the IGBT module and the corresponding variation of the partial state parameters are shown in table 1. In addition, the rate of change of collector current dicDt, turn-on delay time tdonThe status parameters will change accordingly.
TABLE 1 State parameter variation for IGBT failure
Currently, the existing IGBT state monitoring technology needs to adopt an off-line test or a quasi-on-line test. Offline testing cannot achieve real-time warning of faults; the quasi-online detection needs to additionally increase a measuring circuit on the basis of the power converter, so that the system cost is increased. Therefore, a fast and accurate IGBT state monitoring method is needed, which can detect and effectively identify faults in real time, and can record the number of times of short-circuit faults of the IGBT, so as to provide a research basis for predicting the remaining life of the IGBT.
In summary, the driving circuit is used as a bridge between the power loop and the control loop, and directly affects the normal and reliable operation of the IGBT and the safe and stable operation of the system. When faults such as overcurrent and overvoltage occur, the driving circuit is required to pass through Vce、dicAnd the state parameters such as/dt and the like timely and effectively detect and identify faults and protect the IGBT. It can be seen that the driving circuit can acquire the operating state of the IGBT module in the first time. If corresponding state parameters are selected, when the IGBT has faults such as overcurrent and overvoltage, the IGBT is used as a judgment basis; when the IGBT driving circuit is in a normal working condition, the state monitoring is realized through the IGBT driving circuit, so that the integration of functions such as state monitoring, fault identification and the like into the traditional IGBT driving circuit becomes possible. Currently, the state monitoring function of the IGBT driving circuit is less researched.
Technical scheme of prior art I
Before the device is put into use, the IGBT module is tested off-line under certain conditionsQuantity Vce、VgeAnd TjAnd marking the initial value of the corresponding state parameter, periodically measuring the state parameter of the IGBT module after the device is put into use, and comparing the measured value with the initial value, thereby evaluating and judging the health state and reliability of the IGBT module.
Disadvantages of the first prior art
The detection method cannot realize real-time detection and early warning of faults, so that loss caused by system faults cannot be reduced. Meanwhile, an additional test platform is required for offline test, so that the investment is increased, and the cost is higher.
Technical scheme of prior art II
Quasi-online testing is carried out on the IGBT module, and the saturated voltage drop V of the collector and the emitter under low current is utilizedce(sat)And fault monitoring is realized. A current source capable of independently outputting is added in a converter system, when the converter is shut down, 100mA small current is injected under the condition that the IGBT is in saturation conduction, and the saturation voltage drop of the IGBT module is measured, so that the health level of the IGBT module is evaluated.
The second prior art has the defects
The method needs to add an auxiliary power supply and a test circuit in the converter, and the investment cost of the converter is increased. In addition, the method can evaluate the degradation state of the IGBT only under a specific converter working condition, and has certain limitation in practical engineering application.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide an IGBT driving circuit with the functions of state monitoring and fault recording, and solves the following problems: (1) the state monitoring and fault recognition functions are integrated into the driving circuit, real-time state monitoring is realized, and early warning is effectively carried out on the failure of the IGBT module, so that the reliability and safety of the system are improved, and the maintenance cost is reduced; (2) and the logic control chip is used for recording and outputting the times of short-circuit faults of the IGBT, so that a research basis is provided for the service life prediction and health management of the IGBT, and the service life is prolonged.
In order to achieve the above purposes, the technical scheme adopted by the invention is as follows:
an IGBT drive circuit with state monitoring and fault recording functions comprises: the system comprises a logic control module, a fault monitoring module, an optical fiber interface and a power supply module; the logic control module comprises: logic control circuit and gate power amplifier circuit, logic control circuit includes: a logic control chip; the fault monitoring module includes: a fault detection circuit and a signal processing circuit;
the power supply module is a DC/DC power supply module and is used for providing a working power supply for the logic control module, the fault monitoring module and the optical fiber interface and realizing high-voltage isolation between the control circuit and the power loop;
the gate power amplifying circuit is connected with a gate g and an auxiliary emitter e of the IGBT module, and the logic control circuit is respectively connected with the signal processing circuit and the optical fiber interface;
the optical fiber interface is used for converting the PWM optical signals into corresponding electric signals and transmitting the electric signals to the logic control chip, and converting feedback signals of different fault types into corresponding optical signals and sending fault alarm information when the IGBT is in fault;
when the IGBT is in a normal working condition, the optical fiber interface is also used for displaying and outputting the accumulated short-circuit fault times in the logic control chip;
the fault detection circuit is connected with a gate electrode g, an auxiliary collector electrode c and a power emitter electrode E of the IGBT module and is used for detecting collector-emitter voltage V of the IGBT module in the switching-on processceCollector current IcCollector current change rate dicDt, gate voltage VgeGate electrode current IgAnd junction temperature TjWaiting for the state parameter; and transmits the detection signal to the signal processing circuit,
the signal processing circuit is used for receiving the detection signal, comparing the detection signal with a corresponding preset comparison threshold value, transmitting the comparison result to the logic control circuit, providing a criterion for the protection action of the protection circuit and realizing the fault monitoring of the IGBT module;
the logic control chip is used for controlling the on and off of the IGBT module through the gate power amplifying circuit after processing the PWM input signal according to the comparison result sent by the signal processing circuit, and is also used for recording the accumulated short-circuit fault times so as to prevent the chip power-down data from being lost.
On the basis of the scheme, the signal processing circuit is composed of a comparator U1～UnIs composed of a preset comparator U1～UnComparison threshold value V in1～VnWhich are the respective state parameter values of the IGBT in different states, and V1>V2>……>VnIn which V is1As IGBT fault detection protection threshold; v2～VnThe maximum threshold value is selected as a discrimination basis if the state parameter detection value is greater than or equal to the corresponding preset threshold value, and the IGBT is indicated to be in a corresponding fault or degradation state; and if the state parameter detection value is smaller than all the threshold values, the IGBT is in a healthy state.
On the basis of the scheme, the logic control chip is a CPLD chip or an FPGA chip.
The invention has the beneficial effects that:
(1) the functions of state monitoring, fault identification and the like are integrated into the IGBT driving circuit, the working state of the IGBT can be obtained within the first time, the multi-stage detection formed by a plurality of comparators can realize the fault identification and state monitoring of the IGBT, and the judgment and alarm are made in advance for the degradation failure, so that the system paralysis caused by the degradation failure of the IGBT module is avoided, and compared with an offline test and a quasi-online test, the operation is convenient and the cost is lower;
(2) and the accumulated short-circuit fault times are recorded and output through the logic control chip, the power failure data of the chip is not lost, and a research basis is provided for the residual life prediction and the health management in the whole life cycle of the IGBT.
Drawings
The invention has the following drawings:
FIG. 1 is a ratio statistical chart of a failure part of a variable flow system;
FIG. 2 Power cycle aging test Vce(sat)Changes with aging process;
FIG. 3 is a block diagram of an IGBT driving circuit;
fig. 4 is a schematic diagram of a signal processing circuit.
Detailed Description
The invention is described in further detail below with reference to fig. 3-4.
The invention provides an IGBT driving circuit with state monitoring, fault identification and recording functions, which utilizes VceVoltage detection sum dicThe method comprises the steps of detecting the change rate of the current/dt to realize real-time monitoring of state parameters, realizing state detection of the IGBT by a certain number of comparators and setting a multi-stage comparison threshold, identifying fault states by different state variable data, and outputting corresponding feedback signals. Meanwhile, a signal processing scheme of the driving circuit is designed, the frequency of occurrence of short-circuit faults is recorded and stored, the data is guaranteed not to be lost when power is down, and the stored previous fault information can be output after power is re-turned on.
The invention provides an IGBT driving circuit with fault monitoring, identifying and recording functions, aiming at the defects of the existing IGBT in the aspects of on-line state monitoring, health management and the like. The system can be divided into a logic control module, a fault monitoring module, an optical fiber interface and a power supply module. The logic control module comprises a logic control circuit and a gate power amplifying circuit, and the fault monitoring module comprises a fault detection circuit and a signal processing circuit, as shown in fig. 3.
The DC/DC power supply module has the main functions of providing a working power supply for the logic control module, the fault monitoring module and the optical fiber interface and realizing high-voltage isolation between the control circuit and the power loop.
In the logic control module, a gate power amplifying circuit is connected with a gate g and an auxiliary emitter e of the IGBT module, the logic control circuit is connected with a fault monitoring module and an optical fiber interface, and a logic control chip processes a PWM input signal according to a fault feedback signal of a fault detection module and controls the IGBT module to be reliably switched on and off through the gate power amplifying circuit. In addition, the accumulated short-circuit fault times are recorded by using a logic control chip, output is carried out through an optical fiber interface, the power failure data of the chip is not lost, and the control chip can be selected from a CPLD (complex programmable logic device) or an FPGA (field programmable gate array).
In the fault monitoring module, a fault detection circuit is connected with a gate electrode g and an auxiliary collector electrode c of the IGBT module and a power emitter electrode E to detect the collector-emitter voltage V of the IGBT module in the turn-on processceCollector current IcCollector current change rate dicDt, gate voltage VgeGate electrode current IgJunction temperature TjAnd the like. And then, the detection signal is transmitted to a signal processing circuit consisting of a plurality of comparators, and is compared with a corresponding preset comparison threshold value, and the comparison result is transmitted to a logic control circuit, so that a criterion is provided for the protection action of the protection circuit, and the fault monitoring of the IGBT module is realized.
As shown in fig. 4, a schematic diagram of a signal processing circuit is provided by providing a comparator U1～UnAnd presetting a comparison threshold V in the comparator1～VnWhich are respectively corresponding state parameter values and V of the IGBT in different states1>V2>……>VnIn which V is1As IGBT fault detection protection threshold; v2～VnAs an IGBT degradation degree monitoring threshold value, the larger the threshold value is, the higher the degradation degree of the IGBT module is represented. If the state parameter detection value is larger than or equal to the corresponding preset threshold value, selecting the maximum threshold value as a judgment basis to indicate that the IGBT is in a corresponding fault or degradation state; and if the state parameter detection value is smaller than all the threshold values, the IGBT is in a healthy state and operates normally. The multistage partition detection is realized by utilizing the preset threshold values of the plurality of comparators, so that the IGBT fault detection protection can be realized when faults such as overcurrent and overvoltage occur, the change of state parameters can be detected in real time under normal working conditions, the degradation degree of a device can be represented, and a fault reference criterion is provided for the normal work of the IGBT in the whole life cycle.
The optical fiber interface is connected with the logic control circuit and used for converting the PWM optical signals into corresponding electric signals and transmitting the electric signals to the logic control chip, and converting feedback signals of different fault types into corresponding optical signals and sending fault alarm information when the IGBT is in fault. In addition, when the IGBT is in a normal working condition, the fiber interface displays and outputs the accumulated short-circuit fault times in the control chip.
The technical key points and points to be protected of the invention are as follows:
(1) on the basis of an IGBT driving circuit, a multistage detection circuit consisting of a plurality of comparators is utilized to realize fault identification and state monitoring of the device, and early warning is realized for IGBT faults;
(2) and a logic control chip of the IGBT driving circuit is used for recording and outputting the accumulated short-circuit fault times, so that the power failure data of the chip is not lost, and a fault reference criterion is provided for normal work of the IGBT in the whole life cycle.
Accessories:
references (e.g. patents/papers/standards)
[1] Stone Wei. high-power IGBT module health state information extraction method research and accelerated aging test platform development [ D ]. Zhejiang: zhejiang university, 2018.
[2]H.Luo,T.Iannuzzo,and P.D.Reigosa,et al.“Modern IGBT gate drivingmethods for enhancing reliability of high-power converters—Anoverview,”Microelectron.Rel,vol.58,pp.141-150,2016.
[3] A girl of poplar, wenyang, li national jade, high power IGBT module and drive circuit overview [ J ] high voltage technology, 2018, 44 (10): 3207-3220.
[4] Fault Prediction and Health Management (PHM) and reliability assessment technology research of traction converters [ D ]. beijing: beijing university of transportation, 2017.
[5]Smet V，Forest F，Huselstein J J，et al.Evaluation of V-ce Monitoring asa Real-Time Method to Estimate Aging of Bond Wire-IGBT Modules Stressed by PowerCycling[J].IEEE Transactions on Industrial Electronics，2013，60(7)：2760-2770.
[6] Liubingli, Rooifei, Xiaofei, etc. IGBT health state monitoring method based on collector-emitter saturation voltage drop and solder layer void ratio, CN105242186A [ P ] 2016.
[7] An IGBT element running state monitor device, CN106610601A [ P ] 2017.
List of abbreviations, english and key term definitions:
1. an Insulated Gate Bipolar Transistor (IGBT);
2. pulse Width Modulation (PWM), Pulse width modulation;
3、Vcethe voltage between the collector and the emitter of the IGBT;
4、Iccollector current of the IGBT;
5、dicdt, collector current rate of change of the IGBT;
6、Vgethe voltage between the gate and the emitter of the IGBT;
7、Iggate current of the IGBT;
8、Tjthe junction temperature of the IGBT.
Those not described in detail in this specification are within the skill of the art.
Claims (3)
1. An IGBT drive circuit with state monitoring and fault recording functions is characterized by comprising: the system comprises a logic control module, a fault monitoring module, an optical fiber interface and a power supply module; the logic control module comprises: logic control circuit and gate power amplifier circuit, logic control circuit includes: a logic control chip; the fault monitoring module includes: a fault detection circuit and a signal processing circuit;
the power supply module is a DC/DC power supply module and is used for providing a working power supply for the logic control module, the fault monitoring module and the optical fiber interface and realizing high-voltage isolation between the control circuit and the power loop;
the gate power amplifying circuit is connected with a gate g and an auxiliary emitter e of the IGBT module, and the logic control circuit is respectively connected with the signal processing circuit and the optical fiber interface;
the optical fiber interface is used for converting the PWM optical signals into corresponding electric signals and transmitting the electric signals to the logic control chip, and converting feedback signals of different fault types into corresponding optical signals and sending fault alarm information when the IGBT is in fault;
when the IGBT is in a normal working condition, the optical fiber interface is also used for displaying and outputting the accumulated short-circuit fault times in the logic control chip;
the fault detection circuit is connected with a gate electrode g, an auxiliary collector electrode c and a power emitter electrode E of the IGBT module and is used for detecting collector-emitter voltage V of the IGBT module in the switching-on processceCollector current IcCollector current change rate dicDt, gate voltage VgeGate electrode current IgAnd junction temperature TjWaiting for the state parameter; and transmits the detection signal to the signal processing circuit,
the signal processing circuit is used for receiving the detection signal, comparing the detection signal with a corresponding preset comparison threshold value, transmitting the comparison result to the logic control circuit, providing a criterion for the protection action of the protection circuit and realizing the fault monitoring of the IGBT module;
the logic control chip is used for controlling the on and off of the IGBT module through the gate power amplifying circuit after processing the PWM input signal according to the comparison result sent by the signal processing circuit, and is also used for recording the accumulated short-circuit fault times so as to prevent the chip power-down data from being lost.
2. The IGBT drive circuit with status monitoring and fault recording functions as claimed in claim 1, wherein the signal processing circuit is composed of a comparator U1～UnIs composed of a preset comparator U1～UnComparison threshold value V in1～VnWhich are the respective state parameter values of the IGBT in different states, and V1>V2>……>VnIn which V is1As IGBT fault detection protection threshold; v2～VnThe maximum threshold value is selected as a discrimination basis if the state parameter detection value is greater than or equal to the corresponding preset threshold value, and the IGBT is indicated to be in a corresponding fault or degradation state; if the state parameter detection value is less than all the threshold values, the IGB is indicatedT is in a healthy state.
3. The IGBT driving circuit with the functions of state monitoring and fault recording according to claim 1, wherein the logic control chip is a CPLD chip or an FPGA chip.
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Cited By (8)
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| CN111999629A (en) * | 2020-08-24 | 2020-11-27 | 阳光电源股份有限公司 | IGBT module state monitoring method and device |
| CN112492750A (en) * | 2020-10-21 | 2021-03-12 | 北京交通大学 | Functional laminated high-power driving protection circuit |
| CN112751521A (en) * | 2020-12-31 | 2021-05-04 | 安徽工程大学 | Controller system applied to motor |
| CN113848445A (en) * | 2021-10-11 | 2021-12-28 | 中国华能集团清洁能源技术研究院有限公司 | Method for monitoring short-circuit and open-circuit faults of IGBT (insulated Gate Bipolar transistor) in SST (Voltage tester) based on Vce |
| CN114325287A (en) * | 2022-01-04 | 2022-04-12 | 深圳市永联科技股份有限公司 | Power MOS manages fault detection's circuit |
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