CN111366752A - Annular shear piezoelectric acceleration sensor structure and manufacturing method thereof - Google Patents
Annular shear piezoelectric acceleration sensor structure and manufacturing method thereof Download PDFInfo
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- CN111366752A CN111366752A CN202010181997.0A CN202010181997A CN111366752A CN 111366752 A CN111366752 A CN 111366752A CN 202010181997 A CN202010181997 A CN 202010181997A CN 111366752 A CN111366752 A CN 111366752A
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- 238000010008 shearing Methods 0.000 claims abstract description 22
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- 238000009434 installation Methods 0.000 claims description 13
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- 229910001069 Ti alloy Inorganic materials 0.000 claims description 7
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- G—PHYSICS
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- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
- G01P15/0915—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up of the shear mode type
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Abstract
The invention discloses an annular shearing piezoelectric acceleration sensor structure and a manufacturing method thereof, wherein the annular shearing piezoelectric acceleration sensor structure comprises a base, an annular shape memory alloy and at least one piezoelectric crystal, wherein a mounting column perpendicular to the base is formed in the center of the top surface of the base, and a limiting structure is formed at the joint of the mounting column and the base; the shape memory alloy is sleeved on the mounting column, and a gap is formed between the outer surface of the mounting column and the inner surface of the shape memory alloy; the piezoelectric crystal set up in between erection column and the shape memory alloy, the internal surface and the surface of piezoelectric crystal are the arc surface, the internal surface of piezoelectric crystal with the surface laminating of erection column, the surface of piezoelectric crystal with the internal surface laminating of shape memory alloy utilizes shape memory alloy atress shrink with the piezoelectric crystal fastening on the erection column.
Description
Technical Field
The invention relates to the technical field of vibration measurement, in particular to an annular shear piezoelectric acceleration sensor structure suitable for high-G-value impact acceleration measurement and a manufacturing method thereof.
Background
The impact acceleration measurement is used as a branch of vibration measurement, and the demand is more and more vigorous at present. Shock acceleration sensors have been developed for many years as a means of measuring shock acceleration displacement. The research on the domestic impact acceleration is started late, and the performance of the domestic impact sensor is far behind that of foreign products due to factors such as process and the like.
The piezoelectric sensor is a major type of acceleration sensor, and its main structural form includes the following two major types, compression type and shear type. The compression type has a compression structure, so that the transverse sensitivity of the sensor is high. The shear type is insensitive to lateral acceleration due to the polarization crystal orientation of the sensitive material, and has small lateral sensitivity. Therefore, compared with the two piezoelectric sensor structures, the shear type performance is superior to the compression type performance. The shearing structure can be subdivided into flat plate shearing, annular shearing and triangular shearing, and each shearing structure has the characteristics of the shearing structure. The base is processed into a flat plate by the flat plate shearing structure, and the flat plate shearing structure is easily affected by vibration or impact to enable the sensor to output abnormally. Annular shear structures are particularly secure, and sensors of this type are rarely used for a variety of reasons. The triangular shearing structure is applied to a plurality of foreign piezoelectric acceleration sensors, and the triangular shearing structure needs piezoelectric ceramics, a balancing weight, a memory fastening device and the like to be combined together to form the sensor. The shearing structure of the type is the most complicated one of three shearing structures, the number of structural parts is large, and the rigidity and the strength of the sensor are difficult to ensure.
However, the impact acceleration measurement has very high requirements on the structural strength of the sensor, and due to the reason that the rigidity and the strength of the sensor are difficult to guarantee, many sensors are damaged or even collapsed when bearing high impact acceleration, and the accuracy of the measurement cannot be guaranteed.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an annular shear piezoelectric acceleration sensor structure and a manufacturing method thereof, wherein the annular shear piezoelectric acceleration sensor structure can improve the rigidity and the structural strength of a piezoelectric sensor and improve the reliability of the sensor structure.
In order to solve the technical problems, the invention adopts the following technical scheme:
a ring-shaped shearing piezoelectric acceleration sensor structure comprises a base, a ring-shaped shape memory alloy and at least one piezoelectric crystal, wherein a mounting column perpendicular to the base is formed in the center of the top surface of the base, and a limiting structure is formed at the joint of the mounting column and the base; the shape memory alloy is sleeved on the mounting column, and a gap is formed between the outer surface of the mounting column and the inner surface of the shape memory alloy; the piezoelectric crystal set up in between erection column and the shape memory alloy, the internal surface and the surface of piezoelectric crystal are the arc surface, the internal surface of piezoelectric crystal with the surface laminating of erection column, the surface of piezoelectric crystal with the internal surface laminating of shape memory alloy utilizes shape memory alloy atress shrink with the piezoelectric crystal fastening on the erection column.
Preferably, a wire is welded to each of the mounting post and the shape memory alloy.
Preferably, the limiting structure is a positioning step.
Preferably, the shape memory alloy is a one-way shape memory alloy.
Preferably, the number of the piezoelectric crystals is 2.
Preferably, the base is made of titanium alloy bar stock.
The invention also provides a manufacturing method of the annular shear piezoelectric acceleration sensor structure, which comprises the following steps:
s1: preparing a base, wherein an installation column vertical to the base is formed in the center of the top surface of the base, and a limiting structure is formed at the joint of the installation column and the base;
s2: preparing a ring-shaped shape memory alloy;
s3: preparing a piezoelectric crystal, wherein the inner surface and the outer surface of the piezoelectric crystal are both arc surfaces, the radian of the inner surface of the piezoelectric crystal is matched with the radian of the outer surface of the mounting column, and the radian of the outer surface of the piezoelectric crystal is matched with the radian of the inner surface of the shape memory alloy;
s4: mounting a piezoelectric crystal on a mounting column of a base, wherein the inner surface of the piezoelectric crystal is attached to the outer surface of the mounting column;
s5: sleeving the shape memory alloy on the piezoelectric crystal, wherein the outer surface of the piezoelectric crystal is attached to the inner surface of the shape memory alloy;
s6: and applying an acting force to the shape memory alloy to make the shape memory alloy stressed to contract so as to fasten the piezoelectric crystal on the mounting column.
Preferably, the method for manufacturing the annular shear piezoelectric acceleration sensor structure further includes step S7: and welding a lead on each of the mounting column and the shape memory alloy.
Preferably, the step S1 further includes:
s11: cutting the prepared titanium alloy bar into a disc-shaped base, wherein an installation column is reserved at the center of the top surface of the base, and a limiting structure is reserved at the joint of the installation column and the base;
s12: and grinding the outer surface of the mounting column.
Preferably, the step S3 further includes:
s31: forming and firing the piezoelectric crystal;
s32: and grinding the inner surface and the outer surface of the piezoelectric crystal.
The invention has the beneficial technical effects that: the annular shear piezoelectric acceleration sensor structure adopts the shape memory alloy as a fastener, and the fastening force provided by the shape memory alloy can ensure that the structure of the sensor core body is not damaged when the sensor core body bears high impact acceleration, so that the rigidity and the structural strength of the piezoelectric sensor are improved; in addition, the shape memory alloy is used as a fastener and a piezoelectric crystal, so that the mass block used in the traditional sensor is omitted, the structure of the sensor is greatly simplified, and the reliability of the structure of the sensor is improved; finally, the structure of the sensor is simplified, so that the mass of the sensor is reduced, and the sensor has wider frequency response.
Drawings
FIG. 1 is a schematic perspective view of an annular shear piezoelectric acceleration sensor structure according to the present invention;
FIG. 2 is a cross-sectional view of an annular shear piezoelectric acceleration sensor configuration of the present invention;
FIG. 3 is a schematic perspective view of a base according to the present invention;
FIG. 4 is a schematic perspective view of a piezoelectric crystal according to the present invention;
FIG. 5 is a schematic perspective view of the shape memory alloy of the present invention;
FIG. 6 is a schematic diagram of the electrode connections of the annular shear piezoelectric acceleration sensor structure of the present invention;
fig. 7 is a working flow chart of a manufacturing method of the annular shear piezoelectric acceleration sensor structure of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood by those skilled in the art, the present invention is further described with reference to the accompanying drawings and examples.
As shown in fig. 1-5, in an embodiment of the present invention, the annular shear piezoelectric acceleration sensor structure includes a base 10, two symmetrical piezoelectric crystals 20 and a shape memory alloy 30 in a shape of a circular ring, a mounting column 11 perpendicular to the base 10 is formed at the center of the top surface of the base 10, and a limiting structure 12 is formed at the connection between the mounting column 11 and the base 10; the shape memory alloy 30 is sleeved on the mounting column 11, and a gap is formed between the outer surface of the mounting column 11 and the inner surface 31 of the shape memory alloy 30; the piezoelectric crystal 20 is arranged between the mounting column 11 and the shape memory alloy 30, the inner surface 21 and the outer surface 22 of the piezoelectric crystal 20 are both arc surfaces, the inner surface 21 of the piezoelectric crystal 20 is attached to the outer surface 111 of the mounting column 11, the outer surface 22 of the piezoelectric crystal 20 is attached to the inner surface 31 of the shape memory alloy 30, and the piezoelectric crystal 20 is fastened on the mounting column 11 by utilizing the stress contraction of the shape memory alloy 30 to form a piezoelectric acceleration sensor sensitive core body.
As shown in fig. 3, the base 10 is a disk-shaped base formed by cutting a titanium alloy bar, and the base 10 is used for contacting with the outside to sense the external acceleration and transmit the acceleration to the piezoelectric crystal 20. Due to the contact of the base 10 with the outside, the bottom surface 13 of the base 10 must ensure sufficient flatness, so as to avoid the influence of acceleration in other directions than the axial direction due to the uneven bottom surface on the measurement accuracy. A columnar mounting column 11 used for matching with the piezoelectric crystal 20 is formed in the center of the top surface of the base 10 through cutting, and the outer surface 111 of the mounting column 11 is attached to the inner surface 21 of the piezoelectric crystal 20 to form an assembly surface. Since the piezoelectric crystal 20 is a fragile crystal, there is a high requirement for the flatness of the outer surface 111 of the mounting post 11, and the outer surface of the mounting post 11 must ensure sufficient surface flatness to prevent the base 10 from breaking the piezoelectric crystal 20 after being subjected to external action. The invention strictly controls the height of the mounting column 11 and avoids the sensor core body from generating transverse acceleration when bearing the acceleration. A limiting structure 12 is reserved at the joint of the mounting column 11 and the base 10, and the limiting structure 12 can be designed to surround the positioning step of the mounting column 11 and can also be symmetrically arranged on positioning bumps on two sides of the mounting column 11. The limiting structure 12 is used for limiting the installation position of the piezoelectric crystal 20 during installation, and during installation, the piezoelectric crystal 20 is assembled above the limiting structure 12, so that short circuit caused by the fact that the inner surface 21 and the outer surface 22 of the piezoelectric crystal 20 are in contact with the base 10 at the same time can be effectively avoided.
As shown in fig. 4, the piezoelectric crystal 20 is formed into an arc-shaped structure by extrusion molding and firing. Grinding of inner and outer surfaces 21, 22 of piezoelectric crystal 20 after firing of piezoelectric crystal 20 is required to improve flatness and curvature so that inner and outer surfaces 21, 22 of piezoelectric crystal 20 maintain sufficient surface flatness and curvature to avoid crushing of piezoelectric crystal 20 during assembly or use. The polarization direction of the piezoelectric crystal 20 is axial, the piezoelectric crystal 20 only senses axial shearing force, the piezoelectric crystal 20 generates electric charges in proportion to the shearing force after bearing the axial shearing force, and the acceleration borne by the sensor is obtained by measuring the magnitude of the electric charges.
As shown in FIG. 5, the shape memory alloy 30 is a one-way shape memory alloy that does not deform under external action after being subjected to external action to shrink and set. The shape memory alloy 30 is designed to provide a fastening force, and the inner surface 31 of the shape memory alloy 30 needs to have sufficient surface flatness so that the inner surface 31 of the shape memory alloy 30 and the outer surface 22 of the piezoelectric crystal 20 can be fitted to form a fitting surface. The shape memory alloy 30 is used as a fastening force source of the piezoelectric acceleration sensor structure, the shape memory alloy 30, the piezoelectric crystal 20 and the base 10 are in a tight fit mode, and the shape memory alloy 30, the piezoelectric crystal 20 and the base 10 are fastened together to form the sensitive core body structure after being contracted.
As shown in fig. 1 and 2, when the annular shear piezoelectric acceleration sensor structure of the present invention is assembled, the inner surfaces 21 of the two piezoelectric crystals 20 are first attached to the outer surface 111 of the mounting post 11 of the base 10, and in order to avoid short circuit caused by simultaneous contact between the inner surfaces 21 and the outer surfaces 22 of the piezoelectric crystals 20 and the base 10, the piezoelectric crystals 20 must be assembled above the position-limiting structure 12. After assembling the piezoelectric crystals 20 and the base 10, the outer surfaces 22 of the two piezoelectric crystals 20 are enclosed to form a cylindrical surface. The cylindrical surfaces enclosed by the outer surfaces 22 of the two piezoelectric crystals 20 are attached to the inner surface 31 of the shape memory alloy 30, and the shape memory alloy 30 is assembled on the outer surfaces 22 of the piezoelectric crystals 20, so that the assembly relationship of the base 10, the piezoelectric crystals 20 and the shape memory alloy 30 is completed. After the assembly is finished, the position of the piezoelectric crystal 20 is adjusted, so that the top surface 23 of the piezoelectric crystal 20 is parallel to the bottom surface 13 of the base 10; the shape memory alloy 30 is positioned so that the top surface 32 of the shape memory alloy 30 is parallel to the bottom surface 13 of the base 10 and the shape memory alloy 30 is in place. Since the shape memory alloy 30 is maintained in a positional relationship by a static friction force with the piezoelectric crystal 20 when assembled, the close fit relationship among the shape memory alloy 30, the piezoelectric crystal 20, and the base 10 becomes a key factor for successful assembly. After the shape memory alloy 30, the piezoelectric crystal 20 and the base 10 are assembled, an external force is applied to the shape memory alloy 30 to contract the shape memory alloy, so that the shape memory alloy 30, the piezoelectric crystal 20 and the base 10 are fastened together. The static friction force formed by the fastening force of the shape memory alloy 30 is used for balancing the acceleration force generated by the external acceleration, and the shearing action is formed on the piezoelectric crystal 20 to generate electric charges in proportion to the acceleration, and the acceleration born by the sensor is obtained by measuring the magnitude of the electric charges. The static friction between the shape memory alloy 30, the piezoelectric crystal 20 and the base 10 makes the shape memory alloy 30 and the piezoelectric crystal 20 form a sensitive core. The shape memory alloy 30 and the base 10 both belong to metal conductors, and the two piezoelectric crystals 20 are connected in parallel through the shape memory alloy 30 and the base 10, so that the charge sensitivity of the sensor is improved.
After the annular shear piezoelectric acceleration sensor structure is assembled, the sensitive direction of the annular shear piezoelectric acceleration sensor structure is the axial direction of the base 10, and when the annular shear piezoelectric acceleration sensor structure bears axial acceleration, the positive and negative directions of the acceleration are the axial positive and negative directions of the base 10. As shown in fig. 6, after the piezoelectric crystal 20 is polarized, the inner surface 21 and the outer surface 22 become two charge output poles, and the inner surface 21 of the piezoelectric crystal 20 and the mounting column 11 of the base 10 form a mounting surface, so the base 10 can be used as a charge output negative pole; the outer surface 22 of the piezoelectric crystal 20 and the inner surface 31 of the shape memory alloy 30 form a mounting surface, so that the shape memory alloy 30 can be used as a conductor to conduct two piezoelectric crystals 20 with arc structures and connect the two piezoelectric crystals in parallel to form a positive electrode for outputting electric charge; the mounting post 11 and the shape memory alloy 30 are each welded with a wire, which serves as the output of the annular shear piezoelectric acceleration sensor structure of the present invention.
Compared with the prior art, the invention has the beneficial effects that:
1) according to the piezoelectric sensor, the shape memory alloy is used as the fastener, the fastening force provided by the shape memory alloy can ensure that the structure of the sensor core body is not damaged when the sensor core body bears high impact acceleration, and the rigidity and the structural strength of the piezoelectric sensor are improved;
2) the shape memory alloy is used as a fastener and serves as a piezoelectric crystal, so that the quality is high, a mass block used in the traditional sensor is omitted, the structure of the sensor is greatly simplified, and the reliability of a sensor core body is improved;
3) according to the invention, two piezoelectric crystals with arc structures are matched with the shape memory alloy for use, no additional device is needed in the whole assembly process, the assembly can be completed through the deformation and shrinkage of the shape memory alloy, the number of structural components is greatly reduced, the structure is simplified, no redundant part exists, the structural strength of the sensitive structure of the sensor is greatly improved, the quality of the sensor core is reduced, and the core has wider frequency response.
As shown in fig. 7, the present invention also provides a method for manufacturing an annular shear piezoelectric acceleration sensor structure according to the embodiment shown in fig. 1 to 6, which includes the steps of:
s1: preparing a base, wherein a mounting column perpendicular to the base is formed in the center of the top surface of the base, and a limiting structure is formed at the joint of the mounting column and the base. Step S1 further includes steps S11-S12.
S11: the prepared titanium alloy bar is cut into a disc-shaped base, an installation column is reserved at the center of the top surface of the base, and a limiting structure is reserved at the joint of the installation column and the base. Specifically, the prepared titanium alloy bar is cut into a disc-shaped base, the base 10 is in contact with the outside for sensing the external acceleration and transmitting the acceleration to the piezoelectric crystal 20, and the bottom surface 13 of the base 10 must ensure enough flatness, so that the influence on the measurement accuracy due to the acceleration in other directions besides the axial direction caused by the uneven bottom surface is avoided. The center of the top surface of the base 10 is provided with a cylindrical mounting post 11 used for matching with the mounting piezoelectric crystal 20 through cutting, a limiting structure 12 is reserved at the joint of the mounting post 11 and the base 10, the limiting structure 12 can be designed to surround the positioning step of the mounting post 11 and can also be symmetrically arranged on the positioning convex blocks at two sides of the mounting post 11.
S12: and grinding the outer surface of the mounting column. Because piezoelectric crystal 20 belongs to fragile crystal, and erection column 11 surface 111 need form the assembly plane with the laminating of piezoelectric crystal 20 internal surface 21, consequently has higher requirement to the roughness of erection column 11 surface 111, and sufficient surface smoothness must be guaranteed to erection column 11 surface, avoids base 10 to lead to piezoelectric crystal 20 to be cracked after bearing the external action. It is therefore necessary to grind the outer surface of the mounting post to improve flatness and curvature so that the inner and outer surfaces 21, 22 of the piezoelectric crystal 20 maintain sufficient surface flatness.
S2: preparing a ring-shaped shape memory alloy; after the shape memory alloy is prepared in the shape of a circular ring, the inner surface 31 of the shape memory alloy is ground to improve surface flatness.
S3: preparing a piezoelectric crystal, wherein the inner surface and the outer surface of the piezoelectric crystal are both arc surfaces, the radian of the inner surface of the piezoelectric crystal is matched with the radian of the outer surface of the mounting column, and the radian of the outer surface of the piezoelectric crystal is matched with the radian of the inner surface of the shape memory alloy; the step S3 further includes steps S31-S32.
S31: forming and firing the piezoelectric crystal;
s32: and grinding the inner surface and the outer surface of the piezoelectric crystal. Grinding of inner and outer surfaces 21, 22 of piezoelectric crystal 20 after firing of piezoelectric crystal 20 is required to improve flatness and curvature so that inner and outer surfaces 21, 22 of piezoelectric crystal 20 maintain sufficient surface flatness and curvature to avoid crushing of piezoelectric crystal 20 during assembly or use.
S4: and mounting the piezoelectric crystal on a mounting column of the base, wherein the inner surface of the piezoelectric crystal is attached to the outer surface of the mounting column. Specifically, two piezoelectric crystals 20 are attached to the inner surface 21 of the mounting post 11 of the base 10, and in order to avoid short circuit caused by simultaneous contact between the inner surface 21 and the outer surface 22 of the piezoelectric crystals 20 and the base 10, the piezoelectric crystals 20 must be assembled above the position limiting structures 12. After assembling the piezoelectric crystals 20 and the base 10, the outer surfaces 22 of the two piezoelectric crystals 20 are enclosed to form a cylindrical surface.
S5: the shape memory alloy is sleeved on the piezoelectric crystal, and the outer surface of the piezoelectric crystal is attached to the inner surface of the shape memory alloy. Specifically, the cylindrical surfaces enclosed by the outer surfaces 22 of the two piezoelectric crystals 20 are attached to the inner surface 31 of the shape memory alloy 30, and the shape memory alloy 30 is sleeved on the outer surfaces 22 of the piezoelectric crystals 20, so as to complete the assembly relationship among the base 10, the piezoelectric crystals 20, and the shape memory alloy 30. Then, adjusting the position of the piezoelectric crystal 20 to make the top surface 23 of the piezoelectric crystal 20 parallel to the bottom surface 13 of the base 10; the shape memory alloy 30 is positioned so that the top surface 32 of the shape memory alloy 30 is parallel to the bottom surface 13 of the base 10 and the shape memory alloy 30 is in place.
S6: and applying an acting force to the shape memory alloy to make the shape memory alloy stressed to contract so as to fasten the piezoelectric crystal on the mounting column. The shape memory alloy 30, the piezoelectric crystal 20 and the base 10 are tightly matched, after the shape memory alloy 30, the piezoelectric crystal 20 and the base 10 are assembled, external acting force is applied to the shape memory alloy 30 to enable the shape memory alloy to contract, and the shape memory alloy 30, the piezoelectric crystal 20 and the base 10 are fastened together to form the sensitive core. The static friction force formed by the fastening force of the shape memory alloy 30 is used for balancing the acceleration force generated by the external acceleration, and the shearing action is formed on the piezoelectric crystal 20 to generate electric charges in proportion to the acceleration, and the acceleration born by the sensor is obtained by measuring the magnitude of the electric charges.
In some preferred embodiments of the present invention, the method for manufacturing the annular shear piezoelectric acceleration sensor structure further includes the steps of:
s7: and welding a lead on each of the mounting column and the shape memory alloy. After the piezoelectric crystal 20 is polarized, the inner surface 21 and the outer surface 22 become two charge output poles, and the inner surface 21 of the piezoelectric crystal 20 and the mounting column 11 of the base 10 form a mounting surface, so the base 10 can be used as a charge output cathode; the outer surface 22 of the piezoelectric crystal 20 and the inner surface 31 of the shape memory alloy 30 form a mounting surface, so that the shape memory alloy 30 can be used as a conductor to conduct two piezoelectric crystals 20 with arc structures and connect the two piezoelectric crystals in parallel to form a positive electrode for outputting electric charge; the mounting post 11 and the shape memory alloy 30 are each welded with a wire, which serves as the output of the annular shear piezoelectric acceleration sensor structure of the present invention.
The foregoing is considered as illustrative of the preferred embodiments of the invention and is not to be construed as limiting the invention in any way. Various equivalent changes and modifications can be made by those skilled in the art based on the above embodiments, and all equivalent changes and modifications within the scope of the claims should fall within the protection scope of the present invention.
Claims (10)
1. The utility model provides an annular shearing piezoelectricity acceleration sensor structure which characterized in that, annular shearing piezoelectricity acceleration sensor structure including:
the mounting structure comprises a base, a mounting column and a limiting structure, wherein the mounting column is perpendicular to the base and is formed in the center of the top surface of the base;
the shape memory alloy is sleeved on the mounting column, and a gap is formed between the outer surface of the mounting column and the inner surface of the shape memory alloy;
at least one piezoelectric crystal, piezoelectric crystal set up in between erection column and the shape memory alloy, piezoelectric crystal's internal surface and surface are the arc surface, piezoelectric crystal's internal surface with the surface laminating of erection column, piezoelectric crystal's external surface with the internal surface laminating of shape memory alloy utilizes the shape memory alloy atress shrink with piezoelectric crystal fastening on the erection column.
2. The annular shear piezoelectric acceleration sensor structure of claim 1, characterized in that a wire is welded to each of the mounting post and the shape memory alloy.
3. The annular shear piezoelectric acceleration sensor structure of claim 1, characterized in that the limiting structure is a positioning step.
4. The annular shear piezoelectric acceleration sensor structure of claim 1, characterized in that the shape memory alloy is a one-way shape memory alloy.
5. The annular shear piezoelectric acceleration sensor structure of claim 1, characterized in that the number of piezoelectric crystals is 2.
6. The annular shear piezoelectric acceleration sensor structure of claim 1, characterized in that the base is made of titanium alloy bar stock.
7. A manufacturing method of an annular shear piezoelectric acceleration sensor structure is characterized by comprising the following steps:
s1: preparing a base, wherein an installation column vertical to the base is formed in the center of the top surface of the base, and a limiting structure is formed at the joint of the installation column and the base;
s2: preparing a ring-shaped shape memory alloy;
s3: preparing a piezoelectric crystal, wherein the inner surface and the outer surface of the piezoelectric crystal are both arc surfaces, the radian of the inner surface of the piezoelectric crystal is matched with the radian of the outer surface of the mounting column, and the radian of the outer surface of the piezoelectric crystal is matched with the radian of the inner surface of the shape memory alloy;
s4: mounting a piezoelectric crystal on a mounting column of a base, wherein the inner surface of the piezoelectric crystal is attached to the outer surface of the mounting column;
s5: sleeving the shape memory alloy on the piezoelectric crystal, wherein the outer surface of the piezoelectric crystal is attached to the inner surface of the shape memory alloy;
s6: and applying an acting force to the shape memory alloy to make the shape memory alloy stressed to contract so as to fasten the piezoelectric crystal on the mounting column.
8. The method for manufacturing an annular shear piezoelectric acceleration sensor structure of claim 7, which further includes the step S7: and welding a lead on each of the mounting column and the shape memory alloy.
9. The method for fabricating the annular shear piezoelectric acceleration sensor structure of claim 7, characterized in that the step S1 further includes:
s11: cutting the prepared titanium alloy bar into a disc-shaped base, wherein an installation column is reserved at the center of the top surface of the base, and a limiting structure is reserved at the joint of the installation column and the base;
s12: and grinding the outer surface of the mounting column.
10. The method for fabricating the annular shear piezoelectric acceleration sensor structure of claim 8, characterized in that the step S3 further includes:
s31: forming and firing the piezoelectric crystal;
s32: and grinding the inner surface and the outer surface of the piezoelectric crystal.
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Application publication date: 20200703 |