CN111341719B - 承载装置、半导体设备及残余电荷的检测方法 - Google Patents
承载装置、半导体设备及残余电荷的检测方法 Download PDFInfo
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Abstract
本发明公开一种承载装置、半导体设备及残余电荷的检测方法,所公开的承载装置用于半导体设备中承载晶圆(400),包括环状基部(100)、静电承载盘(200)和至少三个定位件(300),静电承载盘(200)包括用于承载晶圆(400)的承载面(210),环状基部(100)环绕承载面(210)设置,至少三个定位件(300)间隔设置于环状基部(100),定位件(300)包括锥形段(310),在锥形段(310)凸出于承载面(210)的情况下,至少三个锥形段(310)形成限位空间,限位空间的开口尺寸向着远离承载面(210)的方向递增。上述方案能够解决因晶圆除电不完全而导致晶圆的位置偏移较大的问题。
Description
技术领域
本发明涉及半导体制造技术领域,尤其涉及一种承载装置、半导体设备及残余电荷的检测方法。
背景技术
微电子器件的制造包含许多不同的阶段,每一阶段又包含各种不同的制程,刻蚀是其中重要的制程之一。刻蚀过程主要包含将等离子体引到晶圆的(待刻蚀材料,如硅)表面,通过物理和化学作用腐蚀晶圆表面,进而在晶圆上形成所需要的各种线条、孔洞、沟槽或其他形状。
在当前晶圆的生产过程中,每片晶圆加工完成后,均需要对其进行除电操作,一般的除电操作是在半导体设备中的电极上加反向电压、通气启辉,或者二者兼有,在除电操作完成后,半导体设备的顶针将晶圆顶起。上述生产过程存在对晶圆除电不完全的情况,从而导致晶圆以及半导体设备中的静电卡盘上会存有残余电荷,当顶针将晶圆顶起时,晶圆上的残余电荷会与静电卡盘上的残余电荷产生局部吸附的作用,进而导致晶圆的位置产生较大的偏移,最终会影响对晶圆的正常取出。
发明内容
本发明公开一种承载装置、半导体设备及残余电荷的检测方法,以解决因晶圆除电不完全而导致晶圆的位置偏移较大的问题。
为了解决上述问题,本发明采用下述技术方案:
一种承载装置,用于半导体设备中承载晶圆,所述承载装置包括环状基部、静电承载盘和至少三个定位件,所述静电承载盘包括用于承载所述晶圆的承载面,所述环状基部环绕所述承载面设置,至少三个所述定位件间隔设置于所述环状基部,所述定位件包括锥形段,在所述锥形段凸出于所述承载面的情况下,至少三个所述锥形段形成限位空间,所述限位空间的开口尺寸向着远离所述承载面的方向递增。
一种半导体设备,包括反应腔室,所述反应腔室中设置有上述的承载装置。
一种残余电荷的检测方法,适用于上述半导体设备,所述方法包括:
S110、对所述半导体设备进行启辉;
S120、在经过启辉后的所述半导体设备中的电极上施加反向电压;
S130、向所述半导体设备的反应腔室中通入气压为预设气压、流量为第一流量的氦气;
S140、检测所述氦气的当前流量;
S150、在所述当前流量与第一流量的比值大于或等于第一预设值情况下,停止氦气的通入。
本发明采用的技术方案能够达到以下有益效果:
本发明实施例公开的承载装置以及半导体设备中,静电承载盘包括用于支撑晶圆的承载面,且至少三个定位件间隔设置于环状基部,在定位件的锥形段凸出于承载面的情况下,至少三个锥形段能够形成限位空间,该限位空间的开口尺寸向着远离承载面的方向递增。该限位空间能够在上下料过程中对晶圆进行限位,即使晶圆上存在有残余电荷,导致晶圆的位置发生偏移,该限位空间也能够对晶圆的位置进行校正,从而使得晶圆的位置始终能够在较小的范围内,能够避免因晶圆的位置发生较大的偏移,而导致晶圆较难或无法顺利地从半导体设备的反应腔中取出的问题,进而能够解决因晶圆除电不完全而导致晶圆的位置偏移较大的问题。
本发明实施例公开的残余电荷的检测方法中,首先半导体设备进行启辉,然后在经过启辉后的半导体设备中的电极上施加反向电压,以进一步对晶圆除电,接下来向半导体设备的反应腔室中通入气压为预设气压、流量为第一流量的氦气,通过检测氦气的当前流量,得出氦气的当前流量值,通过对比氦气的当前流量值与预设值之间的偏差判断出晶圆上残余电荷的多少,且在氦气的当前流量与第一流量的比值大于或等于第一预设值时,说明晶圆上的残余电荷较少或没有,对晶圆的影响较小,从而能够避免因晶圆存在残余电荷而导致其位置发生偏移,进而能够解决因晶圆除电不完全而导致晶圆的位置偏移较大的问题。
附图说明
为了更清楚地说明本发明实施例或背景技术中的技术方案,下面将对实施例或背景技术中所需要使用的附图作简单的介绍,显而易见地,对于本领域普通技术人员而言,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例公开的承载装置的部分结构示意图;
图2为本发明另一实施例公开的承载装置的部分结构示意图;
图3为本发明实施例公开的承载装置的部分结构的俯视图;
图4为本发明实施例公开的承载装置的部分结构的局部细节示意图;
图5为本发明实施例公开的定位件的结构示意图;
图6为本发明实施例公开的真空波纹管的结构示意图。
附图标记说明:
100-环状基部、110-安装孔、120-基环、130-聚集环、131-内周面;
200-静电承载盘、210-承载面、220-顶针、230-静电卡盘;
300-定位件、310-锥形段;
400-晶圆;
500-驱动机构、510-伸缩装置、520-传动件、521-第一段、522-第二段、530-真空波纹管、531-密封槽。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明具体实施例及相应的附图对本发明技术方案进行清楚、完整地描述。显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
以下结合附图,详细说明本发明各个实施例公开的技术方案。
请参考图1至图6,本发明实施例公开一种承载装置,所公开的承载装置用于半导体设备中承载晶圆400,且承载装置包括环状基部100、静电承载盘200和至少三个定位件300。
其中,环状基部100和静电承载盘200为半导体设备放置晶圆400的部件,静电承载盘200包括用于承载晶圆400的承载面210,环状基部100环绕承载面210设置。环状基部100和静电承载盘200的结构以及功能均为已知技术,为了文本简洁,在此不再赘述。
定位件300包括锥形段310,且至少三个定位件300间隔设置于环状基部100。在锥形段310凸出于承载面210的情况下,至少三个锥形段310形成限位空间,该限位空间的开口尺寸向着远离承载面210的方向递增,且在该承载装置安装至半导体设备后,该限位空间的开口朝向半导体设备的顶部。
具体地,定位件300的结构可以有多种,例如,定位件300可以为锥形杆,或者,定位件300还可以包括主体段,该主体段与锥形段310横截面积较大的一端相连。当然,定位件300还可以为杆状件,然后在该杆状件的一端切一个斜面,该斜面所对应的部位就为锥形段310,本发明实施例中对定位件300的结构不做限制。可选地,锥形段310上横截面积最大的位置与横截面积最小的位置之间的距离可以为6mm至20mm,也就是说,锥形段310的锥顶到锥底的距离为6mm至20mm,同时,锥形段310的斜角可以为5°至15°。
晶圆400一般通过半导体设备(例如刻蚀机等)进行加工,在半导体设备具体的工作过程中,晶圆400传进半导体设备的反应腔室后,晶圆400需要从高位下降至承载面210,在此下降的过程中,限位空间能够对晶圆400起到限位作用,以使晶圆400下降至预设位置,即使在下降过程中晶圆400出现位置偏移,限位空间也能够对晶圆400的位置进行校正。当晶圆400完成加工后,晶圆400需要从承载面210上升至高位,此上升过程中,可能因静电吸附的作用而导致晶圆400的位置发生偏移,但限位空间能够对晶圆400进行限位,实现对晶圆400位置的校正,使得晶圆400的位置始终能够在预设的范围内,从而能够避免晶圆400发生较大的偏移。
加工晶圆400的半导体设备一般包括反应腔室,环状基部100、静电承载盘200和至少三个定位件300均设置在反应腔室之内。
本发明实施例公开的承载装置中,静电承载盘200包括用于承载晶圆400的承载面210,且至少三个定位件300间隔设置于环状基部100,在定位件300的锥形段310凸出于承载面210的情况下,至少三个锥形段310能够形成限位空间,该限位空间的开口尺寸向着远离承载面210的方向递增。该限位空间能够在承载装置的上下料过程中对晶圆400进行限位,即使晶圆400上存在有残余电荷,导致晶圆400的位置发生偏移,该限位空间也能够对晶圆400的位置进行校正,从而使得晶圆400的位置始终能够在较小的范围内,能够避免因晶圆400的位置发生较大的偏移,而导致晶圆400较难或无法顺利地从半导体设备的反应腔中取出的问题,进而能够解决因晶圆400除电不完全而导致晶圆400的位置偏移较大的问题。
如上文所述,因晶圆400存在残余电荷而导致其位置较容易偏移,上述实施例中通过对晶圆400进行限位解决晶圆400的偏移问题。从另一个角度考虑,降低晶圆400上的残余电荷也能够解决晶圆400的偏移问题。因此,在本发明实施例中还公开一种残余电荷的检测方法,在晶圆400完成现有的除电操作之后,该方法包括:
S110、对半导体设备进行启辉;
S120、在经过启辉后的半导体设备中的电极上施加反向电压;
具体地,上述两次操作与晶圆400现有的除电方法相同,其除电原理均为已知技术,为了文本简洁,在此不再赘述。不同的是启辉持续的时间、反向电压的大小以及反向电压持续的时间可以与现有晶圆400除电方法不同。进一步地,该启辉持续的时间可以为1秒至5秒。需要说明的是,半导体设备一般包括电极,在晶圆400的加工过程中,等离子体通过在电极的作用下到达晶圆400的表面,且等离子体与晶圆400发生物理化学反应,从而完成对晶圆400的加工。
S130、向半导体设备的反应腔室中通入气压为预设气压、流量为第一流量的氦气;
S140、检测氦气的当前流量;
S150、在氦气的当前流量与第一流量的比值大于或等于第一预设值的情况下,停止氦气的通入。
需要说明的是,在晶圆400不存在残余电荷的情况下通入气压为预设气压的氦气,此时检测到的流量为第一流量,也就是说,将晶圆400直接放置在承载面210上,在半导体设备不进行任何加工过程的情况下通入气压为预设气压的氦气,此时检测到的流量为第一流量。
此方案中,氦气的当前流量与第一流量的比值大于或等于第一预设值时,说明晶圆400上的残余电荷较少或没有,对晶圆400的影响较小,从而能够避免因晶圆400存在残余电荷而导致其位置发生偏移,此种方式也能够解决因晶圆400除电不完全而导致晶圆400的位置偏移较大的问题。
氦气的当前流量与第一流量的比值小于第一预设值时,说明此时晶圆400上还存在有残余电荷,且此部分残余电荷还能够影响晶圆400,可能导致晶圆400的位置发生偏移,需要进一步除电。基于此,在一种可选的实施例中,在氦气的当前流量与第一流量的比值小于第一预设值,且大于第二预设值的情况下,将通入反应腔室的氦气的气压调整为1.5至2.5倍的预设气压,并转入S140,第二预设值小于第一预设值。
具体地,此步骤通过增大通入氦气的气压,以使气压较高的氦气通过流动带走残余电荷,相较于现有的除电操作,此种除电方式简单,易于操作。但此种除电方式一般适用于晶圆400上存在少量电荷的情况。
转入S140操作是为了保证晶圆400在同一个检测标准下进行检测,以使通过此方法检测和除电后的晶圆400均能够满足除电要求。
相同地,氦气的当前流量与第一流量的比值大于或等于第一预设值时,说明晶圆400上的残余电荷较少或没有,对晶圆400的影响较小,从而能够进一步避免因晶圆400存在残余电荷而导致其位置发生偏移,此种方式能够进一步解决因晶圆400除电不完全而导致晶圆400的位置偏移较大的问题。
氦气的当前流量与第一流量的比值小于第二预设值时,说明此时晶圆400除电效果较差,晶圆400上还存在有较多的残余电荷,可能导致晶圆400的位置发生较大偏移,需要进一步除电。基于此,在一种可选的实施例中,在氦气的当前流量与第一流量的比值小于第二预设值的情况下,转入S110
此时晶圆400上的残余电荷较多,需要重新进行除电操作,重复步骤S110至S150,直至氦气的当前流量与第一流量的比值大于或等于第一预设值。
以使通过此检测方法的晶圆400上不存在残余电荷,或者存在极少量残余电荷,且该极少量残余电荷不会或较难影响到晶圆400,从而能够从另一个角度解决因晶圆400除电不完全而导致晶圆400的位置偏移较大的问题。
具体地,第一预设值可以为90%,第二预设值可以为60%。
一般情况下,在晶圆400的自动化生产过程中,晶圆400通常通过机械手进行抓取,而机械手的手爪为了实现抓取动作,手爪上安装了较多的零部件,例如,卡盘、到位传感器、接近传感器以及手爪贴片等。因此,机械手的手爪可能会与凸出于承载面210的锥形段310干涉,导致手爪或锥形段310被撞坏,从而造成生产事故。
基于此,在一种可选的实施例中,环状基部100可以开设有至少三个安装孔110,至少三个定位件300可以一一对应地安装于安装孔110内,且锥形段310可回缩至安装孔110之内或凸出于承载面210,也就是说,锥形段310可回缩至安装孔110之内或至少部分伸出至安装孔110之外。此种情况下,当机械手为半导体设备上下料时,锥形段310回缩至安装孔110之内,机械手的手爪靠近承载面210抓取或放置晶圆400时,由于锥形段310回缩至安装孔110之内,此时锥形段310没有凸出于承载面210,能够避免机械手的手爪与锥形段310出现干涉的情况,从而防止手爪或锥形段310被撞坏,进而避免生产事故的发生,最终提高晶圆400自动化生产的可靠性。
具体地,环状基部100可以包括基环120和聚集环130,静电承载盘200可以包括顶针220和静电卡盘230,聚集环130设置于基环120上,静电卡盘230设置于基环120内;顶针220可伸缩地设置于静电卡盘230,晶圆400随顶针220移动。具体地,在顶针220伸出的情况下,顶针220至少部分伸出至静电卡盘230之外,在顶针220缩回的情况下,顶针220缩回至静电卡盘230之内。顶针220能够在晶圆400加工完成后将晶圆400顶起,方便机械手进行抓取,此时,由于晶圆400被顶起,使得机械手在抓取晶圆400时与承载面210之间具有距离,避免机械手撞到承载面210,从而防止手爪或承载装置被撞坏,进而避免生产事故的发生,最终提高晶圆400自动化生产的可靠性。
为了进一步提高限位空间对晶圆400的限位效果,以使晶圆400位置偏移较小,在一种可选的实施例中,在锥形段310凸出于承载面210、且顶针220缩回至静电卡盘230之内的情况下,晶圆400的外周面与锥形段310之间的距离可以为第一距离,聚集环130在向着远离承载面210的方向上可以具有内周面131,内周面131与晶圆400的外周面之间的距离可以为第二距离,且第二距离可以大于第一距离。此种情况下,晶圆400的最大偏移距离可以为第一距离,由于第二距离大于第一距离,所以晶圆400不会与聚集环的内周面131接触,避免聚集环130发生损伤的情况,防止在后续加工晶圆400的过程中出现的加工问题,从而提高晶圆400的良品率较低。
如上文所述,在晶圆400的自动化生产过程中,晶圆400通常通过机械手进行抓取,而机械手通常会设定一个报警值,当晶圆400的偏移量大于报警值时,在机械手抓取晶圆400时,导致机械手无法自校正实现晶圆400的抓取,此时,机械手发生报警,致使生产暂停,从而导致晶圆400的量产不稳定性。
基于此,在一种可选的实施例中,在锥形段310凸出于承载面210、且顶针220至少部分伸出至静电卡盘230之外的情况下,晶圆400的外周面与锥形段310之间的距离可以为第三距离,且第三距离可以小于预设警戒值,该预设警戒值可以为晶圆400的取出警戒值,也就是说,晶圆400的取出警戒值在本实施例中为机械手的报警值,具体地,机械手具有一定的自校正功能,一般当晶圆400的偏移小于机械手的校正范围时,机械手可以通过自身的矫正功能实现对晶圆400的抓取,当晶圆400的偏移大于机械手自身的校正范围时发生报警,生产暂停,为了保证量产稳定性,一般设置机械手的报警值小于机械手的最大校正值。
当然,在半导体设备通过其他方式上来料时,晶圆400的取出警戒值是此种方式所允许晶圆400的最大偏移量。
上述实施例中,当晶圆400被传入承载装置或准备传出承载装置时,锥形段310伸出至安装孔110之外,然后顶针220至少部分伸出至静电卡盘230之外,将晶圆400顶起,方便机械手放置晶圆400或抓取晶圆400,此时,由于第三距离小于晶圆400的取出警戒值,所以晶圆400的偏移量不会大于晶圆400的取出警戒值,从而使得机械手在抓取晶圆400时能够自动校正,实现对晶圆400的抓取,避免生产暂停,进而提高晶圆400的量产稳定性。
在承载装置具体的操作过程中,为了使承载装置的控制较为方便,加工过程流有条不紊,方便操作人员编写控制程序,在本发明实施例中还可以公开一种承载装置的操作方法,该方法包括:
S200、将晶圆400放置于顶针220;
此过程通常通过机械手来完成,实现承载装置的上料。
S210、锥形段310至少部分伸出至安装孔110之外;
S220、顶针220回缩,以使晶圆400下降;
此过程中,由于第二距离大于第一距离,所以在晶圆400的下降过程中,限位空间会对晶圆400进行校正,所以晶圆400不会与聚集环的内周面131接触,避免聚集环130发生损伤的情况,防止在后续加工晶圆400的过程中出现的加工问题,从而提高晶圆400的良品率较低。
S230、锥形段310回缩至安装孔110之内;
避免定位件300伸出影响承载装置进行后续操作。
S240、加工晶圆400;
此操作完成晶圆400的蚀刻加工。
S250、锥形段310至少部分伸出至安装孔110之外;
S260、晶圆400除电以及晶圆400上残余电荷的检测;
由于在晶圆400除电以及晶圆400上残余电荷的检测过程中,晶圆400可能会偏移,所以需要锥形段310至少部分伸出至安装孔110之外进行限位,避免晶圆400出现偏移较大的情况。
S270、顶针220伸出,以使晶圆400升起;
在晶圆400完成除电及检测残余电荷合格之后,顶针220伸出,将晶圆400升起,方便机械手进行抓取。
S280、锥形段310回缩至安装孔110之内;
此过程是能够避免定位件300与机械手干涉,出现不必要的生产事故,进而提高晶圆400生产时的安全性。
S290、将晶圆400传出。
从而完成一个晶圆400的整个加工流程,且此过程各步骤清晰明确。方便操作人员控制承载装置生产作业。
如上文所述,锥形段310可回缩至安装孔110之内或至少部分伸出至安装孔110之外。基于此,在一种可选的实施例中,承载装置还可以包括驱动机构500,至少三个定位件300均可以与驱动机构500相连,驱动机构500可驱动锥形段310回缩至安装孔110之内或至少部分伸出至安装孔110之外,从而实现锥形段310的自动伸缩运动,进而提高承载装置的自动化程度。
具体地,伸缩装置510的种类可以有多种,例如直线电机、液压伸缩杆和气压伸缩杆等,直线电机、液压伸缩杆和气压伸缩杆均能够实现伸缩运动,以驱动定位件300运动,本发明实施例中对伸缩装置510的种类不做限制。
进一步地,驱动机构500的数量可以与定位件300的数量相同,且每个定位件300均连接有一个驱动机构500,但是此种方式需要多个驱动机构500,导致承载装置的成本较高,且不利于控制定位件300同步伸缩。基于此,在一种可选的实施例中,驱动机构500可以包括伸缩装置510、传动件520和真空波纹管530,真空波纹管530的一端与定位件300相连,且真空波纹管530与安装孔110密封设置,真空波纹管530的另一端与传动件520的第一端相连,传动件520的第二端与伸缩装置510相连。此种连接方式的结构较为简单,且驱动可靠,方便安装人员进行安装。同时,相较于上述第一种方式,此种连接方式中仅需一个驱动机构500便可以完成对多个定位件300的驱动,从而能够降低承载装置的成本,且便于控制定位件300同步伸缩。
需要说明的是,真空波纹管530的结构与原理均为已知技术,为了文本简洁,在此不再赘述。
在一种具体的连接方式中,真空波纹管530的一端可以与定位件300螺纹相连,传动件520具有第一段521和第二段522,第二段522的一端与第一段521的一端相连,第一段521的另一端与伸缩装置510相连,第二段522的另一端与真空波纹管530的另一端可以通过螺钉相连。螺纹连接的方式安装简单,方便安装人员进行安装作业,且安装后的稳定性较好,避免脱落。同时,此方案使得伸缩装置510、传动件520和真空波纹管530各部件之间可拆卸相连,方便后期进行拆卸维护,方便更换损坏的部件,进而提高承载装置的可维护性。当然,也可以通过卡接以及磁吸相连等方式进行各部件之间的连接。
如上文所述,真空波纹管530与安装孔110密封设置,可选地,真空波纹管530与安装孔110密封设置的端部设置有密封槽531,密封槽531中设置有密封圈。密封圈在安装后被压缩,使得其形状发生变形,实现封堵缝隙的效果,从而能够较好地密封安装孔110,避免因开设安装孔110而影响半导体设备的真空***,以使半导体设备能够正常地、可靠地运行。
在一种可选的实施例中,安装孔110可以为圆孔,定位件300可以为圆杆,在定位件300伸缩方向上,安装孔110的投影直径为第一直径,定位件300的投影直径为第二直径,第一直径大于第二直径,且两者的差值可以为0.5mm至2mm。避免安装孔110开孔过大,导致晶圆400加工过程中等离子体在安装孔110中积累。同时,也能够避免安装孔110开孔较小,导致定位件300较难伸缩运动。
定位件300的材质可以有多种,例如塑胶、金属等,本发明实施例中对此不做限制。可选地,定位件300可以为树脂件,因为树脂材料的定位件300在晶圆400加工过程中不会或较难出现打火的现象,影响晶圆400的加工以及承载装置的可靠性,从而提高半导体设备在加工晶圆400过程中的稳定性与可靠性。
如上文所述,至少三个定位件300间隔设置于环状基部100,以形成限位空间,为了使定位件300能够较为均匀地对晶圆400进行限位,在一种可选的实施例中,在环状基部100的周向上,至少三个定位件300可以等间隔地设置于环状基部100,此种设置方式无疑能够使得至少三个定位件300均匀分布,从而使得定位件300能够较为均匀地对晶圆400进行限位,实现更好的限位效果,以使晶圆400的位置始终能够在规定的范围内,进而能够避免因晶圆400的位置发生较大的偏移而导致晶圆400较难或无法顺利地传出承载装置,最终能够解决因晶圆400除电不完全而导致晶圆400的位置偏移较大的问题。
基于本发明实施例中公开的承载装置,本发明还公开一种半导体设备,所公开的半导体设备包括反应腔室,反应腔室中设置有如上文任意实施例所述的承载装置。
本发明上文实施例中重点描述的是各个实施例之间的不同,各个实施例之间不同的优化特征只要不矛盾,均可以组合形成更优的实施例,考虑到行文简洁,在此则不再赘述。
以上所述仅为本发明的实施例而已,并不用于限制本发明。对于本领域技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原理之内所作的任何修改、等同替换、改进等,均应包含在本发明的权利要求范围之内。
Claims (14)
1.一种承载装置,用于半导体设备中承载晶圆(400),其特征在于,所述承载装置包括环状基部(100)、静电承载盘(200)和至少三个定位件(300),所述静电承载盘(200)包括用于承载所述晶圆(400)的承载面(210),所述环状基部(100)环绕所述承载面(210)设置,至少三个所述定位件(300)间隔设置于所述环状基部(100),所述定位件(300)包括锥形段(310),在所述锥形段(310)凸出于所述承载面(210)的情况下,至少三个所述锥形段(310)形成限位空间,所述限位空间的开口尺寸向着远离所述承载面(210)的方向递增;
所述环状基部(100)开设有至少三个安装孔(110),至少三个所述定位件(300)一一对应地安装于所述安装孔(110)内,且所述锥形段(310)可回缩至所述安装孔(110)之内或凸出于所述承载面(210)。
2.根据权利要求1所述的承载装置,其特征在于,所述环状基部(100)包括基环(120)和聚集环(130),所述静电承载盘(200)包括顶针(220)和静电卡盘(230),所述聚集环(130)设置于所述基环(120)上,所述静电卡盘(230)设置于所述基环(120)内;
所述顶针(220)可伸缩地设置于所述静电卡盘(230)中,所述晶圆(400)随所述顶针(220)移动。
3.根据权利要求2所述的承载装置,其特征在于,在所述锥形段(310)凸出于所述承载面(210)、且所述顶针(220)缩回至所述静电卡盘(230)之内的情况下,所述晶圆(400)的外周面与所述锥形段(310)之间的距离为第一距离,所述聚集环(130)在向着远离所述承载面(210)的方向上具有内周面(131),所述内周面(131)与所述晶圆(400)的外周面之间的距离为第二距离,且所述第二距离大于所述第一距离。
4.根据权利要求2所述的承载装置,其特征在于,在所述锥形段(310)凸出于所述承载面(210)、且所述顶针(220)至少部分伸出至所述静电卡盘(230)之外的情况下,所述晶圆(400)的外周面与所述锥形段(310)之间的距离为第三距离,且所述第三距离小于预设警戒值。
5.根据权利要求1所述的承载装置,其特征在于,所述承载装置还包括驱动机构(500),至少三个所述定位件(300)均与所述驱动机构(500)相连,所述驱动机构(500)可驱动所述锥形段(310)回缩至所述安装孔(110)之内或凸出于所述承载面(210)。
6.根据权利要求5所述的承载装置,其特征在于,所述驱动机构(500)包括伸缩装置(510)、传动件(520)和真空波纹管(530),所述真空波纹管(530)的一端与所述定位件(300)相连,且所述真空波纹管(530)与所述安装孔(110)密封设置,所述真空波纹管(530)的另一端与所述传动件(520)的第一端相连,所述传动件(520)的第二端与所述伸缩装置(510)相连。
7.根据权利要求6所述的承载装置,其特征在于,所述伸缩装置(510)为直线电机或液压伸缩杆。
8.根据权利要求1所述的承载装置,其特征在于,所述安装孔(110)为圆孔,所述定位件(300)为圆杆,在所述定位件(300)伸缩方向上,所述安装孔(110)的投影直径为第一直径,所述定位件(300)的投影直径为第二直径,所述第一直径大于所述第二直径,且两者的差值为0.5mm至2mm。
9.根据权利要求1所述的承载装置,其特征在于,所述定位件(300)为树脂件。
10.根据权利要求1所述的承载装置,其特征在于,在所述环状基部(100)的周向上,至少三个所述定位件(300)等间隔地设置于所述环状基部(100)。
11.一种半导体设备,包括反应腔室,其特征在于,所述反应腔室中设置有如权利要求1至10中任一项所述的承载装置。
12.一种残余电荷的检测方法,适用于权利要求11所述的半导体设备,其特征在于,所述方法包括:
S110、对所述半导体设备进行启辉;
S120、在经过启辉后的所述半导体设备中的电极上施加反向电压;
S130、向所述半导体设备的反应腔室中通入气压为预设气压、流量为第一流量的氦气;
S140、检测所述氦气的当前流量;
S150、在所述当前流量与第一流量的比值大于或等于第一预设值情况下,停止氦气的通入。
13.根据权利要求12所述的残余电荷的检测方法,其特征在于,在所述当前流量与第一流量的比值小于第一预设值,且大于第二预设值的情况下,将通入所述反应腔室的所述氦气的气压调整为1.5至2.5倍的预设气压,并转入所述S140,所述第二预设值小于所述第一预设值。
14.根据权利要求12所述的残余电荷的检测方法,其特征在于,在所述当前流量与第一流量的比值小于第二预设值的情况下,转入所述S110。
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