CN111341704B - Edge removing device and edge removing method for silicon wafer back sealing layer - Google Patents
Edge removing device and edge removing method for silicon wafer back sealing layer Download PDFInfo
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- CN111341704B CN111341704B CN202010428566.XA CN202010428566A CN111341704B CN 111341704 B CN111341704 B CN 111341704B CN 202010428566 A CN202010428566 A CN 202010428566A CN 111341704 B CN111341704 B CN 111341704B
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- 238000005530 etching Methods 0.000 claims abstract description 84
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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Abstract
The invention provides an edge removing device and an edge removing method for a silicon wafer back sealing layer, wherein the edge removing device comprises: the clamp comprises a first clamping plate and a second clamping plate, and a clamping space is formed between the first clamping plate and the second clamping plate; the silicon wafer comprises a bottom film and at least one functional film, wherein the bottom film is arranged in a clamping space in an attached mode and is attached to a second clamping plate, the functional film comprises a first film layer and a second film layer, the area of the first film layer is larger than that of the second film layer so as to form a step surface on the first film layer, the step surface is opposite to the edge of the surface, provided with a back sealing layer, of the silicon wafer, and a plurality of liquid outlets are formed in the step surface; and the etching liquid supply pipeline is communicated with the liquid outlets and is used for spraying etching liquid to the edge of one surface of the silicon wafer, which is provided with the back sealing layer. The edge removing device disclosed by the embodiment of the invention can meet the requirements of different back sealing layer removing amounts, greatly reduces the consumption of etching liquid, and is favorable for reducing the cost and protecting the environment.
Description
Technical Field
The invention relates to the technical field of silicon wafer preparation, in particular to an edge removing device and an edge removing method for a silicon wafer back sealing layer.
Background
Silicon epitaxial materials are key basic materials in the semiconductor integrated circuit industry, and most of the processes of large-scale integrated circuits use silicon epitaxial wafers. The silicon epitaxial substrate mostly adopts a heavily doped silicon wafer, in the epitaxial process, impurities in the substrate enter a gas phase in an atomic form from the front side and the back side of the substrate at a high temperature, the impurities enter a detention layer and are doped into the epitaxial layer again in the epitaxial growth process to generate a self-doping effect, so that the resistivity of the epitaxial layer is reduced, and the performance of a device is influenced. Therefore, a back sealing technology is provided, namely a layer of high-purity silicon dioxide film is deposited on the back surface of the substrate, so that the back surface impurities are sealed, the volatilization of the impurities can be effectively inhibited, and the influence of self-doping on the resistivity and the uniformity of the resistivity is reduced, which is one side of the back sealing technology; however, the back-sealed silica films also have their adverse effects: firstly, in the epitaxial process especially thick layer epitaxial growth in-process, the silica layer nucleation at the edge back of silicon chip forms polycrystal or amorphous granule, secondly in the epitaxial process, the heating method is mostly the radio frequency heating, and the base temperature is higher than the silicon chip temperature, simultaneously because the silicon chip is different with the coefficient of thermal expansion of back seal silica film, the silicon chip deformation leads to the edge perk. If the silicon dioxide film on the edge of the back of the silicon wafer is stripped, the warping deformation degree of the epitaxial wafer can be reduced, and the quality of the device is improved.
At present, the methods for removing the back sealing layer at the edge of the silicon wafer include the following methods:
the back surface film pasting method adopts a blue film to be pasted on the surface of a back seal layer needing to be protected, and because the specification and the cost of the blue film are limited, the precision control completely depends on manual work, the requirement on operators is high, and the automation control is not facilitated; and in order to solve the problem of surface adhesive residue after the back sealing layer is corroded and removed to uncover the film, the surface adhesive residue needs to be boiled in ammonia water, so that the complexity of one-step process is increased.
The back protection method adopts a soft film or a sucker for protection, the soft film protection can be realized by single-chip corrosion and multi-chip corrosion together, and the soft film and the silicon wafer are squeezed together to prevent hydrofluoric acid from contacting with the SiO2 film, so that the hardness of the soft film is higher; moreover, if the hardness or the extrusion force is not proper, the conditions of splintering or acid entering at the edge can be caused, and the acid entering at the edge can cause that the range of removing the back sealing layer cannot be accurately controlled, so that the edge of the product is irregular; in addition, the method is a complete soaking mode, and the consumption of hydrofluoric acid is large.
The edge removing machine adopts the sucker for edge peeling, and is characterized in that the silicon wafer has no mechanical damage and neat edge, thereby greatly reducing the consumption of labor and working hours, being easy to realize automation, but the equipment is expensive, and the limitation of the sensor causes slight difference between the wafers.
Disclosure of Invention
In view of the above, the invention provides an edge removing device and an edge removing method for a silicon wafer back sealing layer, so as to solve the problems that the removal amount of the back sealing layer is difficult to control, the consumption of etching solution is large, the removal process is complicated and the like in the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme:
an embodiment of the present invention provides an edge removing apparatus for a silicon wafer back sealing layer, including:
the clamp comprises a first clamping plate and a second clamping plate which are oppositely arranged, and a clamping space is formed between the first clamping plate and the second clamping plate;
the silicon wafer clamping device comprises a bottom film and at least one functional film which are placed in a clamping space, wherein the bottom film is attached to a second clamping plate, a silicon wafer is clamped between the functional film and the bottom film under the condition that only one functional film is arranged, the at least two functional films are arranged in a stacked mode, a silicon wafer is clamped between every two adjacent functional films and between the functional film and the bottom film, the functional films comprise a first film layer and a second film layer which are arranged in a stacked mode, the area of the first film layer is larger than that of the second film layer so as to form a step surface on the first film layer, the step surface is opposite to the edge of one surface, provided with a back sealing layer, of the silicon wafer, and a plurality of liquid outlets are formed in the step surface;
and the etching liquid supply pipeline is communicated with the liquid outlets and is used for spraying etching liquid to the edge of one surface of the silicon wafer, which is provided with the back sealing layer, through the liquid outlets.
Optionally, the etching liquid supply pipeline includes a supply pipe and a plurality of etching pipes, the supply pipe and the plurality of etching pipes are disposed inside the first film layer, a first end of the supply pipe is communicated with a first end of each etching pipe, a second end of each etching pipe is communicated with one liquid outlet, and the plurality of etching pipes are radially disposed.
Optionally, in the case of having at least two functional films, the second ends of the supply tubes inside two adjacent first film layers are communicated through a connection tube, and the connection tube is further communicated with an etching liquid supply source.
Optionally, the cross-sectional shape of the liquid outlet is circular or rectangular.
Optionally, the thickness of the second film layer is 0.5 mm-1.5 mm, and the width of the step surface is 0.1 mm-2.5 mm.
Optionally, the minimum distance between the liquid outlet and the second film layer is 5-50 μm.
Optionally, the first film layer and the second film layer are made of any one of PVC, PFA, and PTFE.
Optionally, the method further includes:
the fixture is placed in the centrifugal groove and connected with the centrifugal groove, and the fixture can rotate around the axis of the fixture under the driving of the centrifugal groove.
The invention also provides an edge removing method of a silicon wafer back sealing layer, which is applied to the edge removing device and comprises the following steps:
clamping a bottom film, at least one functional film and a silicon wafer by using a clamp, and enabling the step surface of the functional film to be opposite to the edge of one surface of the silicon wafer on which a back sealing layer is formed, wherein a silicon wafer is clamped between the functional film and the bottom film under the condition that only one functional film is arranged, at least two functional films are arranged in a stacked manner under the condition that at least two functional films are arranged, and a silicon wafer is clamped between every two adjacent functional films and between the functional film and the bottom film;
and rotating the clamp, and simultaneously spraying etching liquid to the edge of the side, on which the back seal layer is formed, of the silicon wafer through the liquid outlets by using an etching liquid supply pipeline until the back seal layer at the edge of the silicon wafer is completely removed.
Optionally, the etching liquid is hydrofluoric acid.
The technical scheme of the invention has the following beneficial effects:
the edge removing device provided by the embodiment of the invention has the advantages of simple structure, convenience in operation and low operation cost, can meet the requirements of different back sealing layer removing amounts, can greatly reduce the consumption of etching liquid, and is favorable for reducing the cost and protecting the environment.
Drawings
Fig. 1 is a schematic structural diagram of an edge removing apparatus for a silicon wafer back sealing layer according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a plurality of functional films sandwiching a silicon wafer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an etching solution supply pipeline according to an embodiment of the present invention;
FIG. 4 is a schematic layout diagram of an etching tube according to an embodiment of the present invention;
FIG. 5 is a schematic view of a circular liquid outlet according to an embodiment of the present invention;
FIG. 6 is a schematic view of a rectangular liquid outlet according to an embodiment of the present invention;
FIG. 7 is a schematic connection diagram of a connection pipe between two adjacent functional membranes according to an embodiment of the present invention;
FIG. 8 is a schematic view of the connection pipes among the functional membranes according to the embodiment of the present invention;
fig. 9 is a schematic view illustrating a positional relationship between a liquid outlet and a second film layer according to an embodiment of the present invention;
fig. 10 is a flowchart illustrating an edge removal method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
As shown in fig. 1-2, an embodiment of the present invention provides an edge removing apparatus for a silicon wafer back sealing layer, which may include a jig, at least one functional film 2, and a base film 6, wherein the jig includes a first clamping plate 51 and a second clamping plate 52 that are oppositely disposed, and a clamping space is formed between the first clamping plate 51 and the second clamping plate 52, that is, an article placed in the clamping space may be clamped by applying a clamping force to the first clamping plate 51 and the second clamping plate 52; at least one functional film 2 and a bottom film 6 are placed in the clamping space, wherein the bottom film 6 is attached to the second clamping plate 52, and when only one functional film 2 is present, a silicon wafer 1 can be clamped between the functional film 2 and the bottom film 6, in this case, the edge removing device is in a single-wafer removing mode, that is, only one silicon wafer 1 is placed in the edge removing device, and in the case of having at least two functional films 2, at least two functional films 2 are stacked, so that a silicon wafer 1 can be clamped between two adjacent functional films 2, and a silicon wafer 1 can be clamped between the bottom film 6 and the adjacent functional film 2, in this case, the edge removing device is in a multi-wafer removing mode, that is, multiple silicon wafers 1 can be placed in the edge removing device at the same time. In the embodiment of the present invention, the functional film 2 includes the first film layer 21 and the second film layer 22 which are stacked, wherein the area of the first film layer 21 is larger than the area of the second film layer 22, so that a step surface is formed in an area of the first film layer 21 not covered by the second film layer 22, the step surface is opposite to an edge of a surface of the silicon wafer 1 on which the back seal is formed, in other words, the area of the step surface corresponds to a removal amount (removal area) of the back seal on the silicon wafer 1, and since the surface of the second film layer 22 is closely attached to the surface of the silicon wafer 1 on which the back seal is formed, the removal area of the exposed back seal on the silicon wafer 1 can be controlled by controlling the area of the surface of the second film layer 22 attached to the silicon wafer 1.
In the embodiment of the invention, the edge removing device further comprises an etching liquid supply pipeline 3, the etching liquid supply pipeline 3 is communicated with the plurality of liquid outlets 23 on the step surface of the first film layer 21 and is used for spraying etching liquid to the edge of the surface, on which the back sealing layer is formed, of the silicon wafer 1 through the plurality of liquid outlets 23, and as most area of the surface, on which the back sealing layer is formed, of the silicon wafer 1 is tightly attached to the second film layer 22, the etching liquid cannot etch the back sealing layer of the part of the area, and only the back sealing layer at the edge of the silicon wafer 1 is removed, so that the purposes of reducing the warping deformation degree of an epitaxial wafer and improving the quality of a device are finally achieved; the removal area of the exposed back seal layer to be removed on the silicon wafer 1 can be controlled by only controlling the area of the surface, which is attached to the silicon wafer 1, of the second film layer 22, so that the removal device in the embodiment of the invention can be applied to removal scenes with any removal amount of the back seal layer; because the etching liquid in the embodiment of the invention is sprayed through the pipeline, compared with a complete soaking mode, the consumption of the etching liquid can be greatly reduced, and the method is beneficial to environmental protection.
As shown in fig. 3-4, in some embodiments of the present invention, the etching liquid supply pipeline 3 is disposed inside the first film layer 21, specifically, the etching liquid supply pipeline 3 may include a supply pipe 31 and a plurality of etching pipes 32, wherein a first end of the supply pipe 31 is communicated with a first end of each etching pipe 32, and a second end of each etching pipe 32 is communicated with a liquid outlet 23, so that the etching liquid flows from the second end of the supply pipe 31, and is shunted from the first end to the first end of each etching pipe 32, and is finally sprayed from the liquid outlet 23 communicated with the second end of the etching pipe 32 toward the edge region of the back seal layer to be removed on the silicon wafer 1; and the etching tubes 32 may be radially arranged to rapidly supply the etching liquid to the liquid outlet 23.
As shown in fig. 5 to 6, in the embodiment of the present invention, the cross-sectional shape of the liquid outlet 23 formed on the step surface of the first film layer 21 may be circular or rectangular, and since the liquid outlet 23 is disposed in the edge region of the silicon wafer 1 where the back seal layer is to be removed, the position of the etching liquid falling on the silicon wafer 1 can be accurately controlled in a top-down etching liquid supply manner, so as to avoid excessive etching; the number of the liquid outlets 23 can be determined according to the actual area to be etched and the required etching speed, and it can be known that when the number of the liquid outlets 23 is large, the etching speed can be correspondingly increased due to the increase of the channels for supplying the etching liquid; in a preferred embodiment of the present invention, the cross-sectional shape of the liquid outlet 23 may be rectangular, and the length direction of the rectangle is the same as the radial direction of the silicon wafer, so that the rectangular liquid outlet 23 can cover a wider area of the edge region to be removed on the silicon wafer 1, thereby increasing the etching speed.
In an alternative embodiment of the present invention, the etching liquid supply pipeline 3 in the functional film 2 (specifically, the first film layer 21) may be formed by a photolithography technique and a soft lithography technique for surface patterning in the microelectronics industry, or formed by a high-temperature, high-pressure, or high-voltage process method, or formed by bonding through oxygen plasma treatment, which are described above as examples, and based on the disclosure of the present invention, the etching liquid supply pipeline 3 may also be formed by other methods, and the embodiment of the present invention does not limit the specific forming manner of the etching liquid supply pipeline 3.
In some embodiments of the present invention, the thickness of the second film layer 22 is 0.5mm to 1.5mm, the width of the step surface is 0.1mm to 2.5mm, the distance from the liquid outlet 23 formed on the step surface of the first film layer 21 to the surface to be removed of the silicon wafer 1 is determined by the thickness of the second film layer 22, by controlling the thickness within the above range, the area of the etching solution directly falling and diffusing on the surface to be removed of the silicon wafer 1 can be controlled, and by controlling the width of the step surface, the removal area of the exposed back sealing layer to be removed on the silicon wafer 1 can be controlled. The first film layer 21, the second film layer 22 and the bottom film 6 in the embodiment of the present invention may be circular, wherein the cross-sectional area of the first film layer 21 may be the same as the cross-sectional area of the silicon wafer 1.
In the case of at least two functional films 2, as shown in fig. 7-8, the second ends of the supply pipes 31 inside two adjacent first film layers 21 are communicated through a connection pipe 33, and the connection pipe 33 is also communicated with an etching liquid supply source, so that the etching liquid can be conveyed to the supply pipe 31 inside each second film layer 21 through the connection pipe 33 and guided to the liquid outlet 23 through the etching pipe 32 to realize the supply of the etching liquid, wherein the connection pipe 33 can be a tee pipe or the like.
As shown in fig. 9, in other embodiments of the present invention, a minimum distance D between the liquid outlet 23 on the step surface and the second film layer 22 is 5 μm to 50 μm, that is, on a plane where the faying surface of the first film layer 21 and the second film layer 22 is located, a minimum distance D between a first point on the edge of the liquid outlet 23, which is closest to the second film layer 22, and a side surface of the second film layer 22 is 5 μm to 50 μm, where the distance D is a reserved etching margin to ensure accuracy of etching and prevent the edge from entering acid to cause a range of the back seal layer that cannot be removed precisely controlled. If the removing device is under the condition of rotation, under the action of centrifugal force and the reserved distance D, the etching precision can be better and more conveniently controlled, and the control difficulty is reduced.
In the embodiment of the present invention, the material of the first film layer 21 and the second film layer 22 may be any one of PVC, PFA, and PTFE, the material of the first film layer 21 and the second film layer 22 may be the same or different, and the above three materials may be resistant to acid corrosion well to ensure recycling, wherein the second film layer 22 is preferably a soft film to ensure that the silicon wafer 1 is not damaged. The PVC is polyvinyl chloride, PFA is a copolymer of a small amount of perfluoropropyl perfluorovinyl ether and polytetrafluoroethylene, and PTFE is a high molecular compound formed by polymerizing tetrafluoroethylene.
In the embodiment of the invention, the back sealing layer formed on the surface of the silicon wafer can be a silicon dioxide layer or a silicon nitride layer, and under the condition that the materials of the back sealing layer are different, proper etching liquid can be selected according to the specific material of the back sealing layer so as to ensure the etching removal effect of the edge of the back sealing layer.
In the embodiment of the invention, the edge removing device further comprises a centrifugal groove 4, the clamp is placed in the centrifugal groove 4 and is connected with the centrifugal groove 4, and the clamp can rotate around the axis of the clamp under the driving of the centrifugal groove 4; specifically, the first clamping plate 51 and the second clamping plate 52 of the clamp can be connected with a rotating shaft which is fixedly connected with the centrifugal groove, so that after a clamping force is applied to the clamp, the silicon wafer 1 clamped in the clamp can synchronously rotate along with the clamp, and under the action of centrifugal force, the etching liquid can deviate to a certain extent to cover more regions to be etched, so that the etching efficiency is improved, and the centrifugal groove 4 can collect the etching liquid to avoid splashing of the etching liquid.
According to the edge removing device provided by the embodiment of the invention, the etching liquid can be accurately sprayed at the position of the back sealing layer to be removed, and meanwhile, the back sealing layer can be more accurately and rapidly removed through centrifugal control; moreover, the device has simple structure, convenient operation and low running cost, greatly reduces the consumption of the etching liquid and is beneficial to environmental protection; moreover, the device is suitable for the situation of different back sealing layer removal amounts, is suitable for large-scale production of the whole product, improves the production efficiency and simultaneously solves the unnecessary cost investment.
As shown in fig. 10, another embodiment of the present invention further provides an edge removing method for a silicon wafer back sealing layer, which is applied to the edge removing apparatus in any of the above embodiments, where the method may include:
step 101: clamping a bottom film, at least one functional film and a silicon wafer by using a clamp, and enabling the step surface of the functional film to be opposite to the edge of one surface of the silicon wafer on which a back sealing layer is formed, wherein a silicon wafer is clamped between the functional film and the bottom film under the condition that only one functional film is arranged, at least two functional films are arranged in a stacked manner under the condition that at least two functional films are arranged, and a silicon wafer is clamped between every two adjacent functional films and between the functional film and the bottom film;
step 102: and rotating the clamp, and simultaneously spraying etching liquid to the edge of the side of the silicon wafer with the back sealing layer through the liquid outlets 23 by using an etching liquid supply pipeline until the back sealing layer at the edge of the silicon wafer is completely removed.
That is, first, a base film 6, at least one functional film 2 and a silicon wafer 1 are clamped by a fixture, so that the step surface of the functional film 2 is opposite to the edge area of the silicon wafer 1 where the back seal layer is to be removed, wherein the removal device can work in two modes, namely, a single-chip removal mode and a multi-chip removal mode, in the single-chip removal mode, the number of the functional films 2 clamped in the fixture is only one, a silicon wafer 1 can be clamped between the functional film 2 and the base film 6, in the multi-chip removal mode, the number of the functional films 2 clamped in the fixture is at least two, a silicon wafer 1 can be clamped between two adjacent functional films 2, and a silicon wafer 1 can also be clamped between the base film 6 and the functional film 2 adjacent to the base film; after the fixing, the fixture can be placed into a centrifugal groove 4 together with a clamped silicon wafer 1, a functional film 2 and the like, after the fixture is installed, the centrifugal groove 4 is used for driving the fixture to rotate, meanwhile, etching liquid is sprayed to the area, to be removed of the back sealing layer, on the silicon wafer 1 through a plurality of liquid outlets 23 on the step surface through an etching liquid supply pipeline 3, the etching liquid is sprayed to the surface of the silicon wafer 1, certain offset is generated under the action of centrifugal force, then the back sealing layer to be removed of the back sealing layer area is etched, and the back sealing layer in the area is completely removed.
After the etching is finished, the clamp can be stopped, the silicon wafer 1 in the clamp is taken out, and the silicon wafer 1 is cleaned and dried, so that the edge of the back sealing layer on the surface of the silicon wafer 1 is removed.
In some embodiments of the invention, the etching liquid is hydrofluoric acid, and the hydrofluoric acid has strong etching capability and high etching speed.
According to the edge removing method provided by the embodiment of the invention, the etching liquid can be accurately sprayed at the position of the back sealing layer to be removed, and meanwhile, the back sealing layer can be more accurately and rapidly removed through centrifugal control; moreover, the method is convenient to operate, low in running cost, capable of removing a plurality of silicon wafers simultaneously, greatly reducing the consumption of the etching liquid and beneficial to environmental protection.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. An edge removing device for a silicon wafer back sealing layer is characterized by comprising: the clamp comprises a first clamping plate and a second clamping plate which are oppositely arranged, and a clamping space is formed between the first clamping plate and the second clamping plate; the bottom film and the at least one functional film are placed in the clamping space, and the bottom film is attached to the second clamping plate; under the condition that only one functional film exists, a silicon wafer is clamped between the functional film and the bottom film; under the condition that at least two functional films are provided, the at least two functional films are arranged in a laminated mode, and a silicon wafer is clamped between every two adjacent functional films and between the functional films and the bottom film; the functional film comprises a first film layer and a second film layer which are stacked, the area of the first film layer is larger than that of the second film layer so as to form a step surface on the first film layer, the step surface is opposite to the edge of one surface of the silicon wafer, which is provided with a back sealing layer, and the step surface is provided with a plurality of liquid outlets; the etching liquid supply pipeline is communicated with the liquid outlets and is used for spraying etching liquid to the edge of one surface of the silicon wafer, which is provided with the back sealing layer, through the liquid outlets; the etching liquid supply pipeline comprises a supply pipe and a plurality of etching pipes, the supply pipe and the etching pipes are arranged inside the first film layer, the first end of the supply pipe is communicated with the first end of each etching pipe, the second end of each etching pipe is communicated with one liquid outlet, and the etching pipes are radially arranged.
2. The edge removing device according to claim 1, wherein in the case of at least two functional films, the second ends of the supply pipes inside adjacent two of the first film layers are communicated through a connection pipe, and the connection pipe is also communicated with an etching liquid supply source.
3. The edge-removal device of claim 1, wherein the exit port has a circular or rectangular cross-sectional shape.
4. The edge removing device according to claim 1, wherein the thickness of the second film layer is 0.5mm to 1.5mm, and the width of the step surface is 0.1mm to 2.5 mm.
5. The edge removing device according to claim 1, wherein the minimum distance between the liquid outlet and the second film layer is 5-50 μm.
6. The edge-removing device of claim 1, wherein the first film layer and the second film layer are made of any one of PVC, PFA, and PTFE.
7. The edge-removal device of claim 1, further comprising:
the fixture is placed in the centrifugal groove and connected with the centrifugal groove, and the fixture can rotate around the axis of the fixture under the driving of the centrifugal groove.
8. An edge removing method of a silicon wafer back sealing layer, which is applied to the edge removing device according to any one of claims 1 to 7, and is characterized by comprising the following steps:
clamping a bottom film, at least one functional film and a silicon wafer by using a clamp, and enabling the step surface of the functional film to be opposite to the edge of one surface of the silicon wafer on which a back sealing layer is formed, wherein a silicon wafer is clamped between the functional film and the bottom film under the condition that only one functional film is arranged, at least two functional films are arranged in a stacked manner under the condition that at least two functional films are arranged, and a silicon wafer is clamped between every two adjacent functional films and between the functional film and the bottom film;
and rotating the clamp, and simultaneously spraying etching liquid to the edge of the side, on which the back seal layer is formed, of the silicon wafer through the liquid outlets by using an etching liquid supply pipeline until the back seal layer at the edge of the silicon wafer is completely removed.
9. The edge removal method of claim 8, wherein the etching solution is hydrofluoric acid.
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