CN111302296A - Method for micro-nano electroforming micro device - Google Patents
Method for micro-nano electroforming micro device Download PDFInfo
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- CN111302296A CN111302296A CN201911132597.4A CN201911132597A CN111302296A CN 111302296 A CN111302296 A CN 111302296A CN 201911132597 A CN201911132597 A CN 201911132597A CN 111302296 A CN111302296 A CN 111302296A
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- mold
- micro
- silica gel
- sandwich structure
- electroforming
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Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000005323 electroforming Methods 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000000741 silica gel Substances 0.000 claims abstract description 20
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004809 Teflon Substances 0.000 claims abstract description 12
- 229920006362 Teflon® Polymers 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 241001133184 Colletotrichum agaves Species 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims abstract description 4
- 238000003825 pressing Methods 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000004070 electrodeposition Methods 0.000 description 10
- 238000001723 curing Methods 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- 230000007123 defense Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
Abstract
The invention discloses a method for micro-nano electroforming of a micro device, which relates to the technical field of micro electro mechanical processing and comprises the following steps: s1: directly processing a Teflon material by using an ultrafast laser to obtain a square mold, wherein the surface of the square mold is provided with a microstructure; s2: cleaning and drying the mold obtained in the step S1, and coating a silica gel mixed solution in the microstructure of the mold; s3: covering a copper metal block on the silica gel mixed solution, and forming a sandwich structure with the mold in the step S2; s4: applying pressure to two ends of the sandwich structure in the step S3, and naturally curing the sandwich structure in the air; s5: and releasing the pressure after the silica gel is solidified, and taking down the die which is subjected to die-back to finally obtain the silica gel real-time mask taking copper as the substrate.
Description
Technical Field
The invention relates to the technical field of micro-electro-mechanical processing, in particular to a method for micro-nano electroforming of a micro device.
Background
Micro-electromechanical systems (MEMS) are a very important branch of the semiconductor industry, which are micro-devices or systems that integrate micro-sensors, micro-actuators, micro-mechanical structures, micro-power sources, micro-energy sources, signal processing and control circuits, high-performance electronic integrated devices, interfaces, and communications. MEMS is a revolutionary new technology, is widely applied to high and new technology industries, and is a key technology related to national science and technology development, economic prosperity and national defense safety. MEMS is a system that integrates tiny devices into a system by micro-assembly or various integration means to achieve specific functions, wherein the fabrication of individual components plays a critical role for MEMS.
The preparation of MEMS spare part bypasses the processes of glue coating, prebaking, exposing, postbaking, developing, mold hardening and the like in the photoetching patterning technology, in the ultraviolet exposure process, ultraviolet rays irradiate the spin-coated photoresist through a mask plate with a certain pattern, a sample wafer is placed in developing solution to develop to form a spare part or a photoresist mold with a specific pattern structure after being postbaked at a certain temperature, finally, the sample wafer with the specific pattern is placed in electroplating solution to be electroplated as a cathode, and a metal pattern structure opposite to the photoresist mold is formed on the surface of the sample wafer.
There are two main technical schemes for MEMS part preparation: UV-LIGA and EFAB protocols. The UV-LIGA process is an MEMS processing technology based on an ultraviolet lithography technology, and mainly comprises three process steps of ultraviolet deep synchrotron radiation lithography, electroforming and injection molding replication.
The EFAB technical scheme is that a series of real-time mask plates are used for selectively electrodepositing metal to stack micro-structure layers, the real-time mask plates are formed by manufacturing a graphical silica gel structure on a metal substrate, the substrate of the mask plates is used as an electroforming anode during electrodeposition, and the real-time mask plates are formed by preparing a corresponding photoresist mould through an LIGA technology and then performing reverse mould copying. The three steps of selective deposition, tiled deposition and surface planarization are required for multiple times when the existing EFAB technology is used for forming a three-dimensional metal structure, and in the specific process, a photoresist mould is prepared through an LIGA technology, and a real-time mask is formed in the photoresist mould by using a silica gel reverse mould; essentially, the EFAB technology is an improved scheme of the UV-LIGA technology, and both the two technical schemes must prepare a photoresist mold, so that high-cost photoresist must be used, most of the photoresist has certain damage to human bodies, and long-time contact can bring certain influence on the health of operators. In addition, the thickness of the photoresist after spin coating is generally not more than 200 μm, the depth is not favorable for metal deposition in the thickness electrodeposition process, electrodeposition and planarization treatment are required for multiple times, the process is very time-consuming, meanwhile, metal layers formed by two adjacent electrodeposition can cause a certain burr to appear on a bonding interface between two layers, and the bonding interface of the two metal layers can influence the structural performance of the whole part; moreover, the steps of photoetching are complicated, the cost is high, and the further cost reduction of the technology is restricted.
Disclosure of Invention
The invention aims to: the method for micro-nano electroforming of the micro device is provided, and solves the problems of high cost, influence on the body health of operators, difficult metal deposition, poor structural performance and complex operation in the background technology.
The technical scheme adopted by the invention is as follows:
a method for micro-nano electroforming of a micro device comprises the following steps:
s1: directly processing a Teflon material by using an ultrafast laser to obtain a square mold, wherein the surface of the square mold is provided with a microstructure; s2: cleaning and drying the mold obtained in the step S1, and coating a silica gel mixed solution in the microstructure of the mold; s3: covering a copper metal block on the silica gel mixed solution, and forming a sandwich structure with the mold in the step S2; s4: applying pressure to two ends of the sandwich structure in the step S3, and naturally curing the sandwich structure in the air; s5: and releasing the pressure after the silica gel is solidified, and taking down the die which is subjected to die-back to finally obtain the silica gel real-time mask taking copper as the substrate.
The invention does not use the relevant photoetching patterning process and does not use high-cost photoresist with certain harmfulness, thereby effectively reducing the production cost; the ultrafast laser processing of the hydrophobic material Teflon is beneficial to pouring out of the silica gel mold, and a release agent used in the EFAB technical scheme is not used, so that the cost can be further reduced; the ultra-fast laser processing hydrophobic material Teflon can be used for processing a mould pattern with the depth close to 500 mu m at one time, more electroplating solution can be contained in the selective electrodeposition process, the metal deposition is more facilitated, the metal layer obtained by electrodeposition at one time is thicker, the number of electrodeposited metal layers is reduced, the component preparation efficiency is improved, and the performance of the prepared metal structure is better. In step S1, according to the process requirements, a series of parameters such as laser scanning speed, number of layers to be processed, number of elements, laser processing power, defocus distance, laser processing frequency, etc. are changed to obtain a high-quality teflon mold having features of sidewall perpendicularity of approximately 90 °, a deep aspect ratio, and a flat bottom, and meanwhile, the microstructure on the mold is determined according to the process requirements, and the processing degree of freedom is high; in step S4, the curing method may be preferably to place the sandwich structure in an oven for baking and fast curing.
Further, the copper metal block in the step S3 is made of anode copper.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. a method for electroforming a micro-nano micro device does not use a photoetching patterning related process or a photoresist with high cost and certain harmfulness, and can effectively reduce the production cost.
2. According to the invention, the ultrafast laser processing of the hydrophobic Teflon material is beneficial to pouring out of the silica gel mold, and the release agent used in the EFAB technical scheme is not used, so that the cost can be further reduced.
3. According to the invention, the ultra-fast laser is used for processing the hydrophobic material Teflon, a mold pattern with the depth close to 500 mu m can be obtained through one-time processing, more electroplating solution can be contained in the selective electrodeposition process, the metal deposition is facilitated, meanwhile, the metal layer obtained through one-time electrodeposition is thicker, the number of electrodeposited metal layers is reduced, the component preparation efficiency is improved, and the prepared metal structure has better performance.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Examples
A method for micro-nano electroforming of a micro device comprises the following steps:
s1: directly processing a Teflon material by using an ultrafast laser to obtain a square mold, wherein the surface of the square mold is provided with a microstructure; s2: cleaning and drying the mold obtained in the step S1, and coating a silica gel mixed solution in the microstructure of the mold; s3: covering a copper metal block on the silica gel mixed solution, and forming a sandwich structure with the mold in the step S2; s4: applying pressure to two ends of the sandwich structure in the step S3, and naturally curing the sandwich structure in the air; s5: and releasing the pressure after the silica gel is solidified, and taking down the die which is subjected to die-back to finally obtain the silica gel real-time mask taking copper as the substrate.
The invention does not use the relevant photoetching patterning process and does not use high-cost photoresist with certain harmfulness, thereby effectively reducing the production cost; the ultrafast laser processing of the hydrophobic material Teflon is beneficial to pouring out of the silica gel mold, and a release agent used in the EFAB technical scheme is not used, so that the cost can be further reduced; the ultra-fast laser processing hydrophobic material Teflon can be used for processing a mould pattern with the depth close to 500 mu m at one time, more electroplating solution can be contained in the selective electrodeposition process, the metal deposition is more facilitated, the metal layer obtained by electrodeposition at one time is thicker, the number of electrodeposited metal layers is reduced, the component preparation efficiency is improved, and the performance of the prepared metal structure is better. In step S1, according to the process requirements, a series of parameters such as laser scanning speed, number of layers to be processed, number of elements, laser processing power, defocus distance, laser processing frequency, etc. are changed to obtain a high-quality teflon mold having features of sidewall perpendicularity of approximately 90 °, a deep aspect ratio, and a flat bottom, and meanwhile, the microstructure on the mold is determined according to the process requirements, and the processing degree of freedom is high; in step S4, the curing method may be preferably to place the sandwich structure in an oven for baking and fast curing.
The above description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be made by those skilled in the art without inventive work within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope defined by the claims.
Claims (2)
1. A method for micro-nano electroforming of micro devices is characterized by comprising the following steps: the method comprises the following steps:
s1: directly processing a Teflon material by using an ultrafast laser to obtain a square mold, wherein the surface of the square mold is provided with a microstructure;
s2: cleaning and drying the mold obtained in the step S1, and coating a silica gel mixed solution in the microstructure of the mold;
s3: covering a copper metal block on the silica gel mixed solution, and forming a sandwich structure with the mold in the step S2;
s4: applying pressure to two ends of the sandwich structure in the step S3, and naturally curing the sandwich structure in the air;
s5: and releasing the pressure after the silica gel is solidified, and taking down the die which is subjected to die-back to finally obtain the silica gel real-time mask taking copper as the substrate.
2. The method for micro-nano electroforming of micro device according to claim 1, wherein: the copper metal block in the step S3 is made of anode copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911132597.4A CN111302296A (en) | 2019-11-19 | 2019-11-19 | Method for micro-nano electroforming micro device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911132597.4A CN111302296A (en) | 2019-11-19 | 2019-11-19 | Method for micro-nano electroforming micro device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111302296A true CN111302296A (en) | 2020-06-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911132597.4A Pending CN111302296A (en) | 2019-11-19 | 2019-11-19 | Method for micro-nano electroforming micro device |
Country Status (1)
| Country | Link |
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| CN (1) | CN111302296A (en) |
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|---|---|---|---|---|
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| US20190382908A1 (en) * | 2018-06-14 | 2019-12-19 | Picofluidics Limited | Method of producing a structure |
-
2019
- 2019-11-19 CN CN201911132597.4A patent/CN111302296A/en active Pending
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|---|---|---|---|---|
| WO2001025137A1 (en) * | 1999-10-04 | 2001-04-12 | Nanostream, Inc. | Modular microfluidic devices comprising layered circuit board-type substrates |
| CN1621945A (en) * | 2004-12-20 | 2005-06-01 | 西安交通大学 | Method for making dimethyl silicone polymer micro flow control chip composite type optical cured resin die arrangement |
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| EP2839970A1 (en) * | 2013-08-21 | 2015-02-25 | Hueck Rheinische GmbH | Method for producing a hydrophobic or superhydrophobic surface topography |
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