CN111293088A - 具有激光可激活模塑化合物的半导体封装 - Google Patents

具有激光可激活模塑化合物的半导体封装 Download PDF

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Publication number
CN111293088A
CN111293088A CN201911227032.4A CN201911227032A CN111293088A CN 111293088 A CN111293088 A CN 111293088A CN 201911227032 A CN201911227032 A CN 201911227032A CN 111293088 A CN111293088 A CN 111293088A
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molding compound
laser
die
pads
semiconductor die
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CN201911227032.4A
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English (en)
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S·H·施马尔茨尔
张超发
W·莱斯
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本公开的实施例涉及具有激光可激活模塑化合物的半导体封装。具体地，提供了模塑封装的实施例和对应的制造方法的实施例。在模塑封装的一个实施例中，模塑封装包括具有多个激光激活区域的激光可激活模塑化合物，该激光激活区域电镀有导电材料，以在激光可激活模塑化合物的第一侧面形成金属焊盘和/或金属走线。嵌入激光可激活模塑化合物中的半导体管芯具有多个管芯焊盘。互连体将半导体管芯的多个管芯焊盘电连接至在激光可激活模塑化合物第一侧面的金属焊盘和/或金属走线。

Description

具有激光可激活模塑化合物的半导体封装
技术领域
本公开的实施例涉及半导体领域。
背景技术
许多类型的半导体器件对寄生电效应高度敏感，这些效应诸如是寄生互连电阻和电感、寄生电容耦合等。例如开关、RF(射频)功率放大器、低噪声放大器(LNA)、天线调谐器、混频器等，都对寄生电效应高度敏感。用于减少封装的半导体器件上的寄生电效应的技术常常会导致总成本较高、封装尺寸较大、制造工艺较复杂、器件性能降低等。
因此，存在改进用于半导体器件的低寄生封装的需求。
发明内容
根据模塑封装的一个实施例，该模塑封装包括：激光可激活模塑化合物，其具有多个激光激活区域，这些激光激活区域电镀有导电材料，以在激光可激活模塑化合物的第一侧面形成金属焊盘和/或金属走线；半导体管芯，其嵌入激光可激活模塑化合物中，并且具有多个管芯焊盘；以及互连体，其将半导体管芯的多个管芯焊盘电连接至在激光可激活模塑化合物第一侧面的金属焊盘和/或金属走线。
在一个实施例中，互连体包括多个线柱凸点，这些线柱凸点在第一端部附接至半导体管芯的多个管芯焊盘，并且在与第一端部相对的第二端部，线柱凸点附接至在激光可激活模塑化合物第一侧面的金属焊盘和/或金属走线。
在另一个实施例中，互连体包括多个金属柱，这些金属在第一端部附接至半导体管芯的多个管芯焊盘，并且在与第一端部相对的第二端部，金属柱附接至在激光可激活模塑化合物第一侧面的金属焊盘和/或金属走线。
在另一个实施例中，互连体包括多个垂直键合线，这些垂直键合线在第一端部附接至半导体管芯的多个管芯焊盘，并且在与第一端部相对的第二端部，垂直键合线附接至在激光可激活模塑化合物第一侧面的金属焊盘和/或金属走线。
单独地或组合地，模塑封装可以进一步包括阻焊层，该阻焊层覆盖激光可激活模塑化合物的第一侧面的一部分，使得在第一侧面仅露出部分金属焊盘和/或金属走线，以形成模塑封装的连接焊盘(landingpads)。
单独地或组合地，可以将多个管芯焊盘设置在半导体管芯的第一侧面处，与第一侧面相对的半导体管芯第二侧面未被激光可激活模塑化合物覆盖，并且模塑封装可以进一步包括球顶包封(glob top)，该球顶包封覆盖半导体管芯的第二侧面。
单独地或组合地，可以将多个管芯焊盘设置在半导体管芯的第一侧面处，与第一侧面相对的半导体管芯第二侧面未被激光可激活模塑化合物覆盖，激光可激活模塑化合物比半导体管芯厚，并且激光可激活模塑化合物可以在半导体管芯的第二侧面具有凹进区域。
激光可激活模塑化合物的凹进区域可以在模塑封装内形成开放腔。
单独地或组合地，模塑封装可以进一步包括散热器，该散热器被设置在激光可激活模塑化合物的凹进区域中。
单独地或组合地，在激光可激活模塑化合物第一侧面的金属焊盘和/或金属走线的厚度可以是约1μm至约80μm，例如约5μm至约20μm。
单独地或组合地，半导体管芯可以包括RF前端电路、逻辑器件，或者半导体管芯可以是控制器。
单独地或组合地，可以通过互连体，将金属焊盘中的第一金属焊盘电连接至半导体管芯的管芯焊盘中的第一管芯焊盘，该金属焊盘在激光可激活模塑化合物的第一侧面，并且在第一管芯焊盘的覆盖区在激光可激活模塑化合物的第一侧面上的垂直投影中，可以将第一金属焊盘定位在第一管芯焊盘的覆盖区外部。
第一金属焊盘可以连接至金属走线中的第一金属走线，该金属走线在激光可激活模塑化合物的第一侧面，并且在垂直投影中，可以将第一金属走线定位在第一管芯焊盘的覆盖区内部，并且与第一管芯焊盘垂直对准。
根据制造模塑封装的方法的一个实施例，该方法包括：将半导体管芯放置在载体上，半导体管芯具有多个管芯焊盘，这些管芯焊盘背离载体；在将半导体管芯放置在载体上之前或之后，将互连体附接至半导体管芯的多个管芯焊盘；将半导体管芯和互连体嵌入激光可激活模塑化合物中；将激光指向激光可激活模塑化合物的第一侧面，以激光激活激光可激活模塑化合物的多个区域；以及将导电材料电镀在激光可激活模塑化合物的多个激光激活区域上，以在激光可激活模塑化合物的第一侧面形成金属焊盘和/或金属走线，其中互连体将半导体管芯的多个管芯焊盘电连接至金属焊盘和/或金属走线，金属焊盘和/或金属走线在激光可激活模塑化合物的第一侧面。
在一个实施例中，将互连体附接至半导体管芯的多个管芯焊盘包括：将多个线柱凸点附接至半导体管芯的多个管芯焊盘。
在另一个实施例中，将互连体附接至半导体管芯的多个管芯焊盘包括：将多个金属柱附接至半导体管芯的多个管芯焊盘。
在另一个实施例中，将互连体附接至半导体管芯的多个管芯焊盘包括：将附接在第一端部的多个垂直键合线附接至半导体管芯的多个管芯焊盘。
单独地或组合地，该方法可以进一步包括：用阻焊层覆盖激光可激活模塑化合物的第一侧面的一部分，使得在第一侧面仅部分金属焊盘和/或金属走线露出，以形成模塑封装的连接焊盘。
单独地或组合地，该方法可以进一步包括：在将导电材料电镀在激光可激活模塑化合物的多个激光激活区域上之后，从半导体管芯去除载体，以露出半导体管芯的与管芯焊盘相对的一侧；以及用球顶包封覆盖半导体管芯通过去除载体而露出的这一侧。
单独地或组合地，将半导体管芯和互连体嵌入激光可激活模塑化合物中可以包括：在互连体的背离载体的一侧用激光可激活模塑化合物覆盖互连体，并且该方法可以进一步包括：使激光可激活模塑化合物(例如通过磨削)变薄，以在互连体的背离载体的一侧露出互连体。
单独地或组合地，将半导体管芯和互连体嵌入激光可激活模塑化合物中可以包括：在互连体的背离载体的一侧用激光可激活模塑化合物覆盖互连体，该方法可以进一步包括：在激光可激活模塑化合物中(例如通过激光或机械钻孔方式)钻孔，以在互连体的背离载体的这一侧露出互连体。
单独地或组合地，在将半导体管芯和互连体嵌入激光可激活模塑化合物中之后，在互连体的背离载体的一侧，互连体可以从激光可激活模塑化合物中突出。
单独地或组合地，该方法可以进一步包括：在激光可激活模塑化合物中，在半导体管芯的与多个管芯焊盘相对的一侧形成空腔。
在阅读以下的详细描述之后以及在查看附图之后，本领域技术人员将认识到附加的特征和优点。
附图说明
附图的元素不必相对于彼此成比例。相似的附图标记标示对应的相似部分。除非它们相互排斥，否则可以组合各种所示的实施例的特征。在附图中描绘了实施例，并且在随后的说明中详细描述了实施例。
图1图示了模塑封装的一个实施例的横截面图，该模塑封装具有用于管芯(芯片)嵌入的激光可激活模塑化合物。
图2图示了图1的模塑封装的局部平面图。
图3A图示了示例性的线柱凸点互连的横截面图，该线柱凸点互连可以用于图1的模塑封装中。
图3B图示了示例性的柱状互连的横截面图，该柱状互连可以用于图1的模塑封装中。
图3C图示了示例性的垂直键合线互连的横截面图，该垂直键合线互连可以用于图1的模塑封装中。
图4图示了模塑封装的另一个实施例的横截面图，该模塑封装具有用于管芯嵌入的激光可激活模塑化合物。
图5A至图5E图示了根据一个实施例在制造模塑封装的不同阶段期间的相应局部横截面图，该模塑封装具有用于管芯嵌入的激光可激活模塑化合物。
图6A至图6E图示了根据另一个实施例在制造模塑封装的不同阶段期间的相应局部横截面图，该模塑封装具有用于管芯嵌入的激光可激活模塑化合物。
图7A至图7D图示了根据又一个实施例在制造模塑封装的不同阶段期间的相应局部横截面图，该模塑封装具有用于管芯嵌入的激光可激活模塑化合物。
图8图示了模塑封装的横截面图，该模塑封装由图5A至图5E、图6A至图6E或图7A至图7D所示方法中的任何一种制成。
图9A至图9E、图10A至图10E、图11A至图11E以及图12A至图12E各自图示了根据附加实施例在制造模塑封装的不同阶段期间的相应局部横截面图，该模塑封装具有用于管芯嵌入的激光可激活模塑化合物。
图13图示了在电镀工艺之后并且在去除载体之前的结构的局部平面图，该结构由图9A至图9E、图10A至图10E、图11A至图11E以及图12A至图12E所示方法中的任何一种制成。
图14图示了在电镀工艺之后并且在载体的去除之前通过一个互连体、一个管芯焊盘和一个金属焊盘/金属走线的横截面图，这些部件由图9A至图9E、图10A至图10E、图11A至图11E以及图12A至图12E所示的方法中的任何一种制成。
具体实施方式
这里所描述的实施例提供了具有低寄生的模塑半导体封装，以及对应的制造方法。封装使用用于管芯(芯片)嵌入的激光可激活模塑化合物。激光可激活模塑化合物包括至少一种添加物、例如以有机金属络合物形式的添加物，该添加物由聚焦激光束引起的物理化学反应激活。反应使模塑化合物中的络合物拆开，并从有机配体中断裂出金属原子。释放的金属原子充当涂覆/电镀在模塑化合物由激光激活的区域中的金属或金属合金(例如Cu、Ni、NiP、Au、Cu/Ni/Au叠层等)的核。如这里所使用的术语“激光激活区域”是指激光可激活模塑化合物的已经被激光束激活的区域，与模塑化合物的激光可激活的区域相对，该区域可被激光激活但实际尚未被激活。模塑化合物的激光激活区域电镀有导电材料，以在激光可激活模塑化合物的一侧或多侧形成金属焊盘和/或金属走线。因此，金属焊盘和/或金属走线直接构造在模塑化合物上，而不必使用复杂且昂贵的引线框架。因此，有源电路与封装I/O(输入/输出)之间的距离是可控的，以使寄生电效应最小化。而且，可以用这种方式实现的金属焊盘和/或金属走线产生较大的设计自由度，因为与具有引线框架类型的方式一样，不需要管芯互连体(例如，线柱凸点、金属柱、垂直键合线等)一定存在于管芯焊盘的覆盖区内部。应当理解，除非另外特别指出，否则这里所描述的各种实施例的特征可以彼此组合。
图1图示了模塑封装100的一个实施例的横截面图，而图2图示了模塑封装100的局部平面图。模塑封装100包括激光可激活模塑化合物102，其具有多个激光激活区域104，这些激光激活区域电镀有导电材料，以在激光可激活模塑化合物102的一侧或多侧形成金属焊盘106和/或金属走线107。至少一个半导体管芯108嵌入激光可激活模塑化合物102中，并且具有多个管芯焊盘110。例如，可能仅有一个半导体管芯108嵌入在激光可激活模塑化合物102中，或者可能有两个或更多个半导体管芯108嵌入在激光可激活模塑化合物102中。嵌入激光可激活模塑化合物102中的半导体管芯108的数目和类型依赖于各种因素，并且不应被认为是限制性的。例如，嵌入激光可激活模塑化合物102中的一个或多个半导体管芯108可以包括诸如一个或多个电源开关的RF前端电路、RF功率放大器、LNA、天线调谐器、混频器等。附加地或可替代地，嵌入激光可激活模塑化合物102中的一个或多个半导体管芯108可以包括逻辑器件。附加地或可替代地，嵌入激光可激活模塑化合物102中的半导体管芯108中的一个半导体管芯可以是控制器。同样，嵌入激光可激活模塑化合物102中的半导体管芯108的数目和类型依赖于各种因素，并且不应被认为是限制性的。
模塑封装100还包括互连体112，该互连体用于将每个嵌入的半导体管芯108的管芯焊盘110连接至金属焊盘106和/或金属走线107的对应焊盘，该金属焊盘和/或金属走线形成在激光可激活模塑化合物102的一侧或多侧。可以使用任何类型的互连体112。例如，互连体112可以包括由诸如铜、金、铝、镍等的金属或金属合金制成的线柱凸点，该线柱凸点在第一端部附接至管芯焊盘110，并且在与第一端部相对的第二端部附接至金属焊盘106和/或金属走线107。示例性的线柱凸点200在图3A中示出。在另一个实施例中，互连体112包括由诸如铜、金、铝、镍等的金属或金属合金制成的金属柱，该金属柱在第一端部附接至管芯焊盘110，并且在与第一端部相对的第二端部附接至金属焊盘106和/或金属走线107。示例性的柱202在图3B中示出。在又一个实施例中，互连体112包括垂直键合线，该垂直键合线在第一端部附接至管芯焊盘110，并且在与第一端部相对的第二端部附接至金属焊盘106和/或金属走线107。通过在第一(近端)端部键合到对应的管芯焊盘110之后切割键合线，形成第二(远端)端部。键合线有比线柱凸点和金属柱更细的倾向，从而使得相邻焊盘之间的电容耦合更小。而且，较大的长度是可能的，从而允许金属焊盘和/或金属走线与半导体管芯之间的较大距离。示例性的垂直键合线204在图3C中示出。为了易于示出相应的互连结构200、202、204，激光可激活模塑化合物102未在图3A至3C中示出。还可以使用其他类型的互连体，例如焊锡凸点。
模塑封装100还可以包括阻焊层114，诸如漆、环氧树脂、液态感光阻焊油墨、干膜感光阻焊油墨等，该阻焊层用金属焊盘106和/或金属走线107覆盖了激光可激活模塑化合物102该侧面的一部分，使得仅部分金属焊盘106和/或金属走线107在该侧面露出，以形成模塑封装100的连接焊盘。例如通过焊接至印刷电路板(PCB)、另一模塑封装等，可以建立到模塑封装100的连接焊盘的外部连接。
在一实施例中，管芯焊盘110被设置在半导体管芯的一个侧面116处，而管芯108的与第一侧面116相对的第二侧面118未被激光可激活模塑化合物102覆盖。相反地，模塑封装100可以进一步包括球顶包封或其他类型的保护材料120，其覆盖半导体管芯108的第二侧面118。在球顶包封的情况下，球顶包封用作保护半导体管芯108的包装。可以将球顶包封放置在半导体管芯108之上作为环境屏障物、机械加固物、干预保护层等。有两种主要类型的球顶包封：单材料半球形和双材料坝填充。在其他实施例中，半导体管芯108的第二侧面118可以具有或可以不具有管芯焊盘110，并且被激光可激活模塑化合物102至少部分地覆盖。
如本文中先前所述，在激光可激活模塑化合物102的一侧或多侧形成的金属焊盘106和/或金属走线107不一定需要存在于管芯焊盘的覆盖区内部。例如，金属焊盘106中的第一金属焊盘106'可以由互连体112电连接至管芯焊盘110中的第一管芯焊盘110'。由于第一管芯焊盘110'被覆盖并且因此在视野之外，所以第一管芯焊盘110'在图2中被示为虚线框。在图2中示出了部分被去除的阻焊剂层114，以图示部分激光可激活模塑化合物102和部分具有上述第一管芯焊盘110'的半导体管芯108。第一管芯焊盘110'的覆盖区垂直投影在具有第一金属焊盘106'的激光可激活模塑化合物102的侧面上(在图2中从页面出来)，在该垂直投影中，第一金属焊盘106'可以定位在第一管芯焊盘110'的覆盖区外部。可以将相同的第一金属焊盘106'连接至金属走线107中的第一金属走线107'，该第一金属走线位于激光可激活模塑化合物102的与第一金属焊盘106'相同的一侧。在垂直投影中，第一金属走线107'可以至少部分地定位在第一管芯焊盘110'的覆盖区内部，并因此与第一管芯焊盘110'垂直对准。
在激光可激活模塑化合物102的一侧或多侧形成的金属焊盘106和/或金属走线107的尺寸、形状和布局依赖于各种因素，并且不应视为限制性的。例如，在RF封装的情况下，金属焊盘106和/或金属走线107的厚度可以在约10μm(微米)至约15μm的范围内。金属焊盘106和/或金属走线107可以更薄，例如在约5μm至约10μm的范围内。对于大功率应用，金属焊盘106和/或金属走线107的厚度可以甚至更大，例如约20μm至约40μm或甚至更厚。例如，金属焊盘106和/或金属走线107可以具有约1μm至约80μm的厚度。考虑到欧姆损耗，较厚的金属焊盘106和/或金属走线107可以是优选的，但是为保持低电容，较薄的金属焊盘106和/或金属走线107可以是优选的。对于不涉及功率转换的RF应用，趋肤效应限制了较厚的金属焊盘106和/或金属走线107的有效性。金属焊盘106和/或金属走线107相对于管芯焊盘110的定位也依赖于各种因素，并且不应被认为是限制性的。
图4图示了模塑封装300的另一个实施例的平面图，该模塑封装300具有激光可激活模塑化合物102、至少一个半导体管芯(在视野之外)以及互连体112，该至少一个半导体管芯嵌入激光可激活模塑化合物102中，互连体112将半导体管芯的管芯焊盘110连接至金属焊盘106和/或金属走线107，金属焊盘和/或金属走线位于激光可激活模塑化合物102的一侧或多侧。根据这个实施例，金属焊盘106和金属走线107中的一些全部或部分地位于相应的管芯焊盘110的覆盖区内部，而金属焊盘106和金属走线107中的其他的位于模塑封装300的垂直投影(从图4中的页面出来)中的相应管芯焊盘110的覆盖区外部。由于管芯焊盘110在视野之外，所以管芯焊盘110在图4中被示为虚线框。图4中仅标记了管芯焊盘110、互连体112、金属焊盘106和金属走线107的单个实例，以减少附图的混淆并有助于理解。金属焊盘106具有大致正方形的形状，金属走线107具有大致矩形的形状，而互连体112具有大致圆形的形状，以清楚地区分模塑封装300的这些不同元件。同样地，在激光可激活模塑化合物102的一侧或多侧形成的金属焊盘106和/或金属走线107的尺寸、形状和布局依赖于各种因素，并且不应视为限制性的。互连体112的尺寸、形状和布局也依赖于各种因素，并且不应视为限制性的，各种因素包括互连体的类型(例如，线柱凸点、金属柱、垂直键合线等)。
接下来描述用于制造具有激光可激活模塑化合物和这里所描述的互连特征的模塑封装的各种方法实施例。
图5A至图5E图示了根据一个实施例在制造这里所描述的模塑封装的不同阶段期间的相应局部横截面图。
图5A示出了附接至临时载体400的多个半导体管芯108，临时载体诸如是金属板、塑料板或薄膜、箔、条带等，其中互连体112背离载体400。例如经由单个单元放置工艺，使用胶粘剂或双面胶带，可以将半导体管芯108附接至载体400。在另一个实施例中，通过首先将管芯108附接至晶片(未示出)并将晶片层压到载体400，可以将半导体管芯108附接至载体400。
如在本文中先前所述，每个互连体112均可以包括线柱凸点、金属柱、垂直键合线等。在被附接至载体400之前，半导体管芯108从半导体晶片(未示出)中例如通过锯切分离出。通常，半导体晶片以及由此得到的半导体管芯108可以由适于制造半导体器件的任何半导体材料制成。这样的材料的示例包括但不限于诸如硅(Si)或锗(Ge)的基础半导体材料，诸如碳化硅(SiC)或硅锗(SiGe)的IV族化合物半导体材料，二元、三元或四元III-V半导体材料，诸如氮化镓(GaN)、砷化镓(GaAs)、磷化镓(GaP)、磷化铟(InP)、磷化铟镓(InGaPa)、氮化铝镓(AlGaN)、氮化铝铟(AlInN)、氮化铟镓(InGaN)、氮化铝镓铟(AlGaInN)或磷化砷化铟镓(InGaAsP)等。
在将管芯110附接至载体400之后，半导体管芯108嵌入本文先前所述类型的激光可激活模塑化合物102中。根据这个实施例，半导体管芯110被超模压，因为管芯108具有互连体112的侧面被相当数量的激光可激活模塑化合物102覆盖，这意味着模塑化合物102将必须变薄以露出互连体112。
图5B示出了激光可激活模塑化合物102变薄以露出互连体112之后的结构，该互连体112连接至半导体管芯108的管芯焊盘110。在一个实施例中，激光可激活模塑化合物102通过磨削变薄，直至露出互连体112。
图5C示出了在激光可激活模塑化合物102的不同区域的激光激活期间的结构。朝下的箭头指示激光指向在具有裸露的互连体112的激光可激活模塑化合物102的侧面，从而激光激活模塑化合物102的不同区域104。如本文中先前所述，通过激光活化被释放的金属原子充当涂覆/电镀在模塑化合物102的区域104中的金属或金属合金(例如Cu、Ni、NiP、Au、Cu/Ni/Au叠层等)的核，该区域由激光限定。对于激光这样直接将激光可激活模塑化合物102结构化合适的聚合物可以包括但不限于：具有树脂基的热固性聚合物、ABS(丙烯腈-丁二烯-苯乙烯)、PC/ABS(聚碳酸酯/丙烯腈-丁二烯-苯乙烯)、PC(聚碳酸酯)、PA/PPA(聚酰亚胺/聚邻苯二甲酰胺)、PBT(聚对苯二甲酸丁二酯)、COP(环烯烃聚合物)、PPE(聚苯醚)、LCP(液晶聚合物)、PEI(聚乙烯亚胺或聚氮丙啶)、PEEK(聚醚醚酮)、PPS(聚苯硫醚)等。
导电材料被电镀在激光可激活模塑化合物102的多个激光激活区域104上，以形成金属焊盘106和/或金属走线107，该金属焊盘和/或金属走线位于激光可激活模塑化合物102的具有裸露的互连体112的侧面，图5D示出在此之后得到的一种结构。每个互连体112将对应的管芯焊盘110电连接至用于该模塑封装的对应的金属焊盘106和/或金属走线107。电镀工艺可以从清洁步骤开始，以去除激光碎屑，并且接着可以增材式地积聚电镀金属、金属合金或金属叠层，以形成金属焊盘106和/或金属走线107，例如，在铜金属焊盘106和/或金属走线107的情况下使用无电流的铜浴。如果需要较大厚度的铜，则可以使用标准的电铸铜浴。可以将一种或更多种专用涂料施加到金属焊盘106和/或金属走线107，涂料诸如是Ni、Au、Sn、Sn/Pb、Ag、Ag/Pd等。
利用阻焊层114覆盖激光可激活模塑化合物102的具有金属焊盘106和/或金属走线107的侧面的一部分，图5E示出了在此之后的结构，因此，仅部分金属焊盘106和/或金属走线107露出，以形成每个模塑封装的连接焊盘。阻焊层114可以是漆、环氧树脂、液态感光阻焊油墨、干膜感光阻焊油墨等。然后可以将该结构重新层压到另一载体(未示出)，该另一载体具有面向新载体的连接焊盘，并且可以去除旧载体。然后可以在去除原载体的侧面，例如通过磨削使结构变薄。球顶包封可以施加到结构的这个侧面，从而保护每个半导体管芯108的裸露侧面。然后例如通过锯穿相邻封装之间的结构，分离出单个体模塑封装。
图6A至图6E图示了根据另一个实施例在制造这里所描述的模塑封装的不同阶段期间的相应局部横截面图。图6A至图6E所示的实施例类似于图5A至图5E所示的实施例。然而区别在于，在图6A中，半导体管芯108仅被微量激光可激活模塑化合物102稍稍地超模压，例如约5μm至约20μm，这意味着互连体112可以通过模塑化合物102的钻孔(例如，通过激光或机械钻孔)而不是磨削被裸露。图6B示出了钻孔工艺之后的结构，该结构形成在激光可激活模塑化合物102中的孔(开口)500，以露出互连体112。图6C至图6E分别与图5C至图5E相同。
图7A至图7D图示了根据又一个实施例在制造这里所描述的模塑封装的不同阶段期间的相应局部横截面图。图7A至图7D所示的实施例类似于图5A至图5E所示的实施例。然而区别在于，在将半导体管芯108和互连体112嵌入激光可激活模塑化合物102中之后，在图7A中，在互连体112的背离载体400的一侧，互连体112从激光可激活模塑化合物102中突出。例如，可以将橡胶元件放置在用于模塑结构的夹具中。橡胶元件防止激光可激活模塑化合物102完全包住互连体112。这样可以避免为了露出互连体112而将激光可激活模塑化合物102变薄(例如通过磨削)或钻孔(例如通过激光或机械钻孔)。互连体112可以例如在模塑工艺之后通过磨削变薄，以使互连体112和激光可激活模塑化合物102的该侧面大致平坦，互连体112在该侧面终止。图7B至图7D分别与图5C至图5E相同。
图8图示了模塑封装的横截面图，该模塑封装由图5A至图5E、图6A至图6E或图7A至图7D所示的方法中的任何一种制成。球顶包封502覆盖半导体管芯108的背面118，该背面在施加球顶包封120之前可以变薄或可以不变薄。除了球顶包封之外的元件可以邻接半导体管芯108的背面118。例如，散热器(未示出)可以附接至半导体管芯108的裸露的背面118，或者可以在激光可激活模塑化合物102中在管芯背面118处形成空腔。
图9A至图9E、图10A至图10E、图11A至图11E以及图12A至图12E各自图示了根据附加实施例在制造模塑封装的不同阶段期间的相应局部横截面图。
在图9A、图10A、图11A和图12A中，提供了诸如金属板、塑料板或薄膜、箔、条带等的载体700。在图9A中，在管芯附接之前，载体700未被结构化。在图10A中，在管芯附接之前，载体700被结构化。在图11A中，载体700具有支柱702。在图12A中，在管芯附接之前，将间隔材料704施加到载体700。间隔材料704在管芯的背面允许一定的绝缘距离。例如在MEMS(微机电***)或传感器应用的情况下，间隔材料704可以稍后被去除以形成空腔，或者可以在管芯的背面被散热器取代。间隔材料704还提供缓冲，以使管芯不与随后用于去除载体的化学物质接触。
图9B、图10B、图11B和图12B示出了附接半导体管芯108之后的相应的载体，附接使用诸如焊锡、胶带、胶等的管芯附接材料706来实现。在图12B的情况下，间隔材料704可以用作管芯附接材料。
图9C、图10C、图11C和图12C示出了用激光可激活模塑化合物102模塑半导体管芯108之后的相应结构，并且可以对应于本文中先前结合图5A至图5B、图6A至图6B和图7A描述的实施例中的任一个。就是说，可以通过使激光可激活模塑化合物102(例如通过磨削)变薄(例如图5B)，露出管芯互连体112；可以通过对激光可激活模塑化合物102的(例如通过激光或机械钻孔的方式)钻孔(例如图6B)，露出管芯互连体112；或者可以通过修改模塑夹具来露出管芯互连体112，使得互连体112从激光可激活模塑化合物102中突出(例如，图7A)，而不必使模塑化合物102变薄或者对模塑化合物102激光钻孔。
图9D、图10D、图11D和图12D示出了在如下过程之后的相应结构：激光激活激光可激活模塑化合物的不同区域，并且在激光可激活模塑化合物的激光激活区域上电镀导电材料，以形成金属焊盘106和/或金属走线107，并且这些结构可以对应于本文中先前结合图5C至图5D、图6C至图6D和图7B至图7C描述的实施例中任一个。
图9E、图10E、图11E和图12E示出了在去除载体700之后的相应结构。在图9E的情况下，半导体管芯108的背面或在管芯背面的管芯附接材料706(如果未去除)是裸露的，并且与激光可激活模塑化合物102的背面大致平坦。在图10E的情况下，管芯焊盘(未示出)被设置在每个管芯108的第一侧面，每个管芯108的(相对的)第二侧面未被激光可激活模塑化合物102覆盖，激光可激活模塑化合物102比半导体管芯108厚，激光可激活模塑化合物102在半导体管芯108的第二侧面具有凹进区域708，该凹进区域708通过去除结构化的载体700而形成。凹进区域708可以用散热器材料填充，或者例如在MEMS或传感器应用的情况下可以保持未填充以形成空腔。在图11E的情况下，由于使用支柱702，激光可激活模塑化合物102围绕管芯108的***接触管芯108的背面。支柱702可以保留在最终的模塑封装中，或者可以被去除例如以形成相应的空腔。在图12E的情况下，间隔材料704可以保留在最终的模塑封装中，或者可以被去除例如以形成相应的空腔。
图13图示了结构的局部平面图，该结构在电镀工艺之后并且在去除载体之前，由图9A至图9E、图10A至图10E、图11A至图11E以及图12A至图12E所示方法中的任何一种制成。在分离之前，金属焊盘106和/或金属走线107对于几个封装是可见的。在图13中仅标记了金属焊盘106/金属走线107的单个实例，以减少附图的混淆并有助于理解。
图14图示了在电镀工艺之后并且在载体的去除之前的一个互连体112、一个管芯焊盘110和一个金属焊盘106/金属走线107的横截面图，它们通过图9A至图9E、图10A至图10E、图11A至图11E以及图12A至图12E所示的方法中的任何一种制成。如图14所示，可以将一种或更多种专用涂层施加到互连体112，专用涂层诸如Ni、Au、Sn、Sn/Pb、Ag、Ag/Pd等。
诸如“第一”、“第二”等的术语用于描述各种元件、区域、部分等，并且也不旨在限制。在整个说明书中，相似的术语指代相似的元素。
如这里所使用的，术语“具有”、“包含”、“包括”以及诸如此类的术语是开放式术语，这些开放式术语指示所陈述的元件或特征的存在，但是不排除额外的元件或特征。除非上下文另外明确说明，否则冠词“一”、“一个”和“该”旨在包括复数以及单数。
尽管这里已经示出和描述了特定实施例，然而本领域普通技术人员应当理解，在不脱离本发明范围的情况下，各种替代和/或等效实施方式可替代所示出和描述的具体实施例。本申请旨在覆盖本文所讨论的具体实施例的任何改编或变化。因此，本发明旨在仅由权利要求及其等同物限制。

Claims (23)

1.一种模塑封装，包括：
激光可激活模塑化合物，所述激光可激活模塑化合物具有多个激光激活区域，所述多个激光激活区域电镀有导电材料，以在所述激光可激活模塑化合物的第一侧面形成金属焊盘和/或金属走线；
半导体管芯，所述半导体管芯嵌入所述激光可激活模塑化合物中并且具有多个管芯焊盘；以及
互连体，所述互连体将所述半导体管芯的所述多个管芯焊盘电连接至在所述激光可激活模塑化合物的所述第一侧面的所述金属焊盘和/或金属走线。
2.根据权利要求1所述的模塑封装，其中所述互连体包括多个线柱凸点，所述线柱凸点在第一端部附接至所述半导体管芯的所述多个管芯焊盘，并且所述线柱凸点在与所述第一端部相对的第二端部附接至在所述激光可激活模塑化合物的所述第一侧面的所述金属焊盘和/或金属走线。
3.根据权利要求1所述的模塑封装，其中所述互连体包括多个金属柱，所述金属柱在第一端部附接至所述半导体管芯的所述多个管芯焊盘，并且所述金属柱在与所述第一端部相对的第二端部附接至在所述激光可激活模塑化合物的所述第一侧面的所述金属焊盘和/或金属走线。
4.根据权利要求1所述的模塑封装，其中所述互连体包括多个垂直键合线，所述垂直键合线在第一端部附接至所述半导体管芯的所述多个管芯焊盘，并且所述垂直键合线在与所述第一端部相对的第二端部附接至在所述激光可激活模塑化合物的所述第一侧面的所述金属焊盘和/或金属走线。
5.根据权利要求1所述的模塑封装，进一步包括阻焊层，所述阻焊层覆盖所述激光可激活模塑化合物的所述第一侧面的一部分，使得在所述第一侧面仅露出部分所述金属焊盘和/或金属走线，以形成所述模塑封装的连接焊盘。
6.根据权利要求1所述的模塑封装，其中所述多个管芯焊盘被设置在所述半导体管芯的第一侧面处，其中所述半导体管芯的与所述第一侧面相对的第二侧面未被所述激光可激活模塑化合物覆盖，并且其中所述模塑封装进一步包括球顶包封，所述球顶包封覆盖所述半导体管芯的所述第二侧面。
7.根据权利要求1所述的模塑封装，其中所述多个管芯焊盘被设置在所述半导体管芯的第一侧面处，其中所述半导体管芯的与所述第一侧面相对的第二侧面未被所述激光可激活模塑化合物覆盖，其中所述激光可激活模塑化合物比所述半导体管芯厚，并且其中所述激光可激活模塑化合物在所述半导体管芯的所述第二侧面具有凹进区域。
8.根据权利要求7所述的模塑封装，其中所述激光可激活模塑化合物的所述凹进区域在所述模塑封装内形成开放腔。
9.根据权利要求7所述的模塑封装，进一步包括散热器，所述散热器被设置在所述激光可激活模塑化合物的所述凹进区域中。
10.根据权利要求1所述的模塑封装，其中在所述激光可激活模塑化合物的所述第一侧面的所述金属焊盘和/或金属走线的厚度为约1μm至约80μm。
11.根据权利要求1所述的模塑封装，其中所述半导体管芯包括RF前端电路、逻辑器件，或者所述半导体管芯是控制器。
12.根据权利要求1所述的模塑封装，其中，在所述激光可激活模塑化合物的所述第一侧面的所述金属焊盘中的第一金属焊盘通过所述互连体电连接至所述半导体管芯的所述管芯焊盘中的第一管芯焊盘，并且其中在所述第一管芯焊盘的覆盖区在所述激光可激活模塑化合物的所述第一侧面上的垂直投影中，所述第一金属焊盘被定位在所述第一管芯焊盘的所述覆盖区的外部。
13.根据权利要求12所述的模塑封装，其中所述第一金属焊盘连接至在所述激光可激活模塑化合物的所述第一侧面的所述金属走线中的第一金属走线，并且其中在所述垂直投影中，所述第一金属走线被定位在所述第一管芯焊盘的所述覆盖区的内部，并且与所述第一管芯焊盘垂直对准。
14.一种制造模塑封装的方法，所述方法包括：
将半导体管芯放置在载体上，所述半导体管芯具有多个管芯焊盘，所述多个管芯焊盘背离所述载体；
在将所述半导体管芯放置在所述载体上之前或之后，将互连体附接至所述半导体管芯的所述多个管芯焊盘；
将所述半导体管芯和所述互连体嵌入激光可激活模塑化合物中；
将激光指向所述激光可激活模塑化合物的第一侧面，以激光激活所述激光可激活模塑化合物的多个区域；以及
将导电材料电镀在所述激光可激活模塑化合物的所述多个激光激活区域上，以在所述激光可激活模塑化合物的所述第一侧面形成金属焊盘和/或金属走线，
其中所述互连体将所述半导体管芯的所述多个管芯焊盘电连接至在所述激光可激活模塑化合物的所述第一侧面的所述金属焊盘和/或金属走线。
15.根据权利要求14所述的方法，其中将所述互连体附接至所述半导体管芯的所述多个管芯焊盘包括：将多个线柱凸点附接至所述半导体管芯的所述多个管芯焊盘。
16.根据权利要求14所述的方法，其中将所述互连体附接至所述半导体管芯的所述多个管芯焊盘包括：将多个金属柱附接至所述半导体管芯的所述多个管芯焊盘。
17.根据权利要求14所述的方法，其中将所述互连体附接至所述半导体管芯的所述多个管芯焊盘包括：将附接在第一端部的多个垂直键合线附接至所述半导体管芯的所述多个管芯焊盘。
18.根据权利要求14所述的方法，进一步包括：
用阻焊层覆盖所述激光可激活模塑化合物的所述第一侧面的一部分，使得在所述第一侧面仅部分所述金属焊盘和/或金属走线露出，以形成所述模塑封装的连接焊盘。
19.根据权利要求14所述的方法，进一步包括：
在将所述导电材料电镀在所述激光可激活模塑化合物的所述多个激光激活区域上之后，从所述半导体管芯去除所述载体，以露出所述半导体管芯的与所述管芯焊盘相对的侧面；以及
用球顶包封覆盖所述半导体管芯的通过去除所述载体而露出的所述侧面。
20.根据权利要求14所述的方法，其中将所述半导体管芯和所述互连体嵌入所述激光可激活模塑化合物中包括：在所述互连体的背离所述载体的一侧用所述激光可激活模塑化合物覆盖所述互连体，所述方法进一步包括：
使所述激光可激活模塑化合物变薄，以在所述互连体的所述背离所述载体的一侧露出所述互连体。
21.根据权利要求14所述的方法，其中将所述半导体管芯和所述互连体嵌入所述激光可激活模塑化合物中包括：在所述互连体的背离所述载体的一侧用所述激光可激活模塑化合物覆盖所述互连体，所述方法进一步包括：
在所述激光可激活模塑化合物中钻孔，以在所述互连体的背离所述载体的侧面露出所述互连体。
22.根据权利要求14所述的方法，其中，在所述互连体的背离所述载体的一侧，所述互连体从所述激光可激活模塑化合物中突出。
23.根据权利要求14所述的方法，进一步包括：
在所述激光可激活模塑化合物中，在所述半导体管芯的与所述多个管芯焊盘相对的一侧形成空腔。
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