CN111290162B - 液晶显示装置、电子设备 - Google Patents
液晶显示装置、电子设备 Download PDFInfo
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- CN111290162B CN111290162B CN202010230323.5A CN202010230323A CN111290162B CN 111290162 B CN111290162 B CN 111290162B CN 202010230323 A CN202010230323 A CN 202010230323A CN 111290162 B CN111290162 B CN 111290162B
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- quantum dot
- liquid crystal
- crystal display
- display device
- color resistance
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Images
Classifications
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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Abstract
本发明公开了一种量子点材料结构、液晶显示装置及电子设备。该量子点材料结构应用于液晶显示装置。该量子点材料结构由内而外依次包括:量子点核、量子点壳和量子点配体层;量子点核包括砷化镉纳米簇;量子点核用于吸收预定波长的绿光;量子点壳用于保护量子点核;配体层用于促进量子点材料结构分散。本发明的量子点材料结构能够解决现有技术中由于RGB色阻不能够完全吸收其他波长的光导致液晶显示器件色纯度降低、色域降低影响视觉效果的问题。与传统的采用加厚RGB色阻膜厚的方案来提升色域相比,本发明可避免对亮度的影响。与现有的在RGB色阻中加入其他吸收材料提高色域的方法相比,本发明能效更高,成本更低。
Description
技术领域
本发明涉及量子点技术领域,具体涉及一种量子点材料结构、液晶显示装置及电子设备。
背景技术
液晶显示(Liquid Crystal Disney,简称为LCD)器件具有低压、微功耗、长寿命、无辐射,轻薄等优异特性,在众多平面显示器件中脱颖而出,成为发展最成熟、应用面最广、已经产业化并且仍在迅猛发展的一种显示器件。但LCD无法实现自发光,我们能看到的美丽的图案是它对光线调制的结果。因此为LCD提供背光源的背光模组是至关重要的零件之一,背光模组的发光效果将直接影响显示模块的视觉效果。白光发光二极管(Light EmittingDiode,简称为LED),光源来源于蓝光LED芯片激发稀土荧光粉。这种传统的荧光粉转换下的白光LED,由于红光光谱部分的缺失,导致显色指数偏低(通常低于80)、色温偏高(一般高于5000K),使其应用受限。因此,探索低成本、高效且显色指数高的新型荧光材料受到越来越多的关注。量子点(Quantum Dots,简称为QDs)是一种新型的半导体荧光材料。该材料是一种具有零维结构的纳米材料,这种纳米级结构带来了量子尺寸效应。随着量子点粒径的减小,量子点的发光颜色由红到蓝移动。由于量子点材料在可见光发射光谱内其发射光的波段是可调的,人们可以根据光源需要制备相应的量子点材料,这是其他发光材料不可比拟的。也正因为量子点的光谱可调,因而可以实现高色域的背光***。而且量子点的半高宽较窄(小于 30nm),实现了更纯的单色光,使得显示器的画面更加鲜艳亮丽。与传统荧光粉相比,在一样的灯光强度之下,量子点所需要的光源更少,在转化过程中所使用的电力自然就少,故在节约能耗方面更有优势。
眼睛是人类感知外界最重要的感觉器官,通过视觉可以获得80%以上的外界信息。而液晶面板是传递信息的直接媒介,因而液晶面板所能传递的颜色信息量也就决定了人们获得的信息量。色域值越大,代表其可以显示的颜色就更加丰富,色彩越艳丽,能被眼睛感受到的信息也就越多。目前主流的LCD技术利用红、绿、蓝(RGB)色阻对白光的不同透过率实现RGB彩色显示。目前大部分量子点背光源模组都是采用量子点膜与蓝光LED结合来提高LCD的色域,但是由于RGB色阻不能够完全吸收其他波长的光,使得RGB255灰阶下纯色的画面色纯度降低。传统技术通过提高RGB色阻厚度来提高色域。RGB光阻单体厚度增加会增加RGB色纯度,同时降低亮度值,反应到光谱上就是减小了其透过光谱的半高宽(fullwidth at half maximum,简称为FWHM)和峰值。随着膜厚的增加,色域值逐渐增大,但增大的幅度小于效率降低的幅度。因此,若采用加厚RGB色阻膜厚的方案来提升色域,需通过其他方式来优化透过率。现有技术还包括在RGB色阻中加入其他吸收材料来提高色域。由于这类材料的吸收光谱较宽,导致LCD穿透明显下降,能效上升。并且,上述方案都会大幅增加RGB色阻的成本。
因此,在保证LCD较高透率的前提下,如何提高RGB色纯度、降低漏光、提高色域,进而显示鲜艳的画面,追求更真实的画质,成为了本领域技术人员亟待解决的技术问题和始终研究的重点。
发明内容
有鉴于此,本发明实施例提供了一种量子点材料结构、液晶显示装置、电子设备,以解决现有技术中由于RGB色阻不能够完全吸收其他波长的光导致液晶显示器件色纯度降低、色域降低影响视觉效果的问题。
为此,本发明实施例提供了如下技术方案:
本发明第一方面,提供了一种量子点材料结构,应用于液晶显示装置,所述量子点材料结构由内而外依次包括:量子点核、量子点壳和量子点配体层;
所述量子点核包括砷化镉纳米簇;
所述量子点核用于吸收预定波长的绿光;
所述量子点壳用于保护量子点核;
所述配体层用于促进量子点材料结构分散。
进一步地,所述量子点壳包括以下材料中的一种或几种:
ZnSe,ZnS,ZnO、SiO2或者量子点水凝胶。
进一步地,所述量子点配体层包括以下材料中的一种或几种:
吡啶、有机酸、烷基硫醇、巯基酸、巯基胺、有机酸、有机胺或者有机磷。
进一步地,所述预定波长为535nm。
本发明第二方面,提供了一种液晶显示装置,包括上述第一方面所述的量子点材料结构和色阻层;其中,所述色组层包括红色色阻、蓝色色阻、绿色色阻;
所述量子点材料结构分散于所述红色色阻和所述蓝色色阻中。
进一步地,所述液晶显示装置还包括蓝色二极管光源。
本发明第三方面,提供了一种液晶显示装置,包括色阻层和偏光层;
所述色组层包括红色色阻、蓝色色阻和绿色色阻;
所述偏光层上对应所述红色色阻和所述蓝色色阻的投影位置涂抹有上述第一方面所述的量子点材料结构。
进一步地,所述偏光层包括上偏光片和下偏光片:
所述量子点材料结构涂抹于所述下偏光片。
进一步地,所述量子点材料结构涂抹于所述下偏光片外侧。
本发明第四方面,提供了一种电子设备包括上述第二方面或第三方面所述的液晶显示装置。
本发明实施例技术方案,具有如下优点:
本发明实施例提供了一种量子点材料结构,应用于液晶显示装置,能够吸收预定波长的绿光。该量子点材料结构能够解决现有技术中由于RGB色阻不能够完全吸收其他波长的光导致液晶显示器件色纯度降低、色域降低影响视觉效果的问题。与传统的采用加厚RGB色阻膜厚的方案来提升色域相比,本发明实施例可避免对亮度的影响。与现有的在RGB色阻中加入其他吸收材料提高色域的方法相比,本发明能效更高,成本更低。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为根据本发明实施例的一种量子点材料结构图。
图2为根据本发明实施例的一种液晶显示装置结构图。
图3为根据本发明实施例的另一种液晶显示装置结构图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中一种量子点材料结构、液晶显示装置、电子设备的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
在本申请中,“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何实施例不一定被解释为比其它实施例更优选或更具优势。为了使本领域任何技术人员能够实现和使用本申请,给出了以下描述。在以下描述中,为了解释的目的而列出了细节。应当明白的是,本领域普通技术人员可以认识到,在不使用这些特定细节的情况下也可以实现本申请。在其它实例中,不会对公知的结构和过程进行详细阐述,以避免不必要的细节使本申请的描述变得晦涩。因此,本申请并非旨在限于所示的实施例,而是与符合本申请所公开的原理和特征的最广范围相一致。
液晶显示技术利用色阻对白光的不同透过率实现RGB彩色显示,由于有机色阻吸收光谱较宽,其背光透过色阻后的光谱也比较宽,导致色域较低。量子点膜与蓝光LED结合可以提高LCD的色域,但是由于色阻不能够完全吸收其他波长的光,使RGB255灰阶下纯色的画面色纯度降低。传统技术通过提高色阻厚度来提高色域,或者在色阻中加入其他吸收材料提高色域。由于这类材料的吸收光谱较宽,导致LCD液晶显示器穿透明显下降,能效上升。图1为根据本发明实施例的一种量子点材料结构图,应用于液晶显示装置。如图1所示,该量子点材料结构由内而外依次包括:量子点核、量子点壳和量子点配体层。
量子点核包括砷化镉纳米簇(Cadmium arsenide Magic-Size,简称为 Cd3As2Magic-Size)。
本实施例中,砷化镉纳米簇的吸收光谱峰位为535nm,发射光谱峰位为 545nm。砷化镉纳米簇的尺寸为1-4nm。
量子点核用于吸收预定波长的绿光。
本实施例利用砷化镉纳米簇的超窄吸收来吸收535nm左右的绿光。改善量子点红绿光与蓝色背光的光型差异,降低大视角色偏。砷化镉纳米簇的置备方法可根据具体情况设置。例如,首先,取1.536g氧化镉粉末(12mmol), 8.75mL油酸(25mmol)以及11.25mL十八烯溶液于50mL的三颈烧瓶中,将反应体系加热至100℃,在该条件下反复抽真空和通入氮气的操作三次后,将反应体系升温至250℃,直至深红色的氧化镉粉末分散溶解,溶液变得澄清透明,降温至120℃待用。其次,取0.2228g的Mg3As2超细粉末(1.0mmol) 于另一个50mL三颈烧瓶中,确保装置处于氮气气氛保护下,继而将1.5mL 的4.0mol/L的盐酸溶液注入到反应瓶中,制取H3As的反应迅速发生,在氮气流的吹送作用下,H3As通过一个充满了P2O5粉末用于除水的洗气装置,进入到之前待用的油酸镉溶液之中。气体通入到反应瓶后,溶液颜色迅速变化,由无色迅速变成深红色,意味着砷化镉纳米簇的生成。反应过程中的不同时段,以注射器分别从溶液中取出0.1mL的原液,分散到3.0mL的甲苯溶液中,进行光谱监测。反应经历十分钟以后,已经完全反应,体系立刻降温至接近室温。此反应由于会产生有毒性的H3As气体,因此操作过程需要十分谨慎,装置的气密性以及尾气的收集需要格外注意,饱和的硫酸铜溶液和1.0moL/L的硝酸银溶液用于尾气处理。尾气处理的化学反应如下:
8CuSO4+AsH3+4H2O==H3AsO4+4H2SO4+4Cu2SO4
3Cu2SO4+2AsH3==3H2SO4+2Cu3As
4Cu2SO4+AsH3+4H2O==H3AsO4+4H2SO4+8Cu
3AgNO3+AsH3==Ag3As+HNO3
采用上述方法置备的砷化镉纳米簇在日光照射下呈现深红色,紫外灯照射下有很明显的绿色的发光,符合材料的荧光光谱位置。该方法可以实现高质量砷化镉纳米簇的大量制备,产物的制备量取决于反应物的投料。大量制备的纳米簇经过快速的离心分离之后,通过真空烘箱烘干,最终干燥的粉末状的纳米簇材料具有良好的空气稳定性,本领域技术人员根据该实施例的描述,可以采用现有技术中其他的方式来置备砷化镉纳米簇。
量子点壳用于保护量子点核。
与大多数的半导体纳米簇结构相类似,当砷化镉纳米簇以溶液形式存在时,欠缺化学稳定性和易被氧化的特质,限制了材料更深入的研究和进一步利用。为了进一步提高纳米簇材料的稳定性和光学性质,对纳米簇材料进行了无机惰性材料的包覆。本实施例中,量子点壳为具有阻隔作用的常规量子点保护层。量子点壳的作用包括防止材料发生熟化、刻蚀、分解、氧化等变质现象。量子点壳包括的材料可根据具体情况设置,例如,ZnS、ZnSe、SiO2等。对砷化镉纳米簇进行量子点壳包覆的方法可根据具体情况设置。例如,取一定量制备好的砷化镉或磷化镉纳米簇化合物溶液于三颈烧瓶中,进行反复的抽真空通入氮气的操作三次,溶液温度保持在30℃条件下,用注射器适量的滴入金属有机化合物二乙基锌,五分钟后等摩尔的环硫乙烷分子以相同的方式加入到反应体系中,反应30分钟后,取样测光谱,紫外可见吸收光谱以及荧光光谱均有一定的红移,表明ZnS壳已经包覆在纳米簇表面。在ZnS壳材料包覆之后,光谱峰位置都出现了红移现象,且红移的光谱依然保持着较窄的半峰宽。荧光效率的测试结果表明,砷化镉纳米簇核壳结构纳米晶的荧光量子效率达到了8.0%,较砷化镉纳米簇1.5%的结果有了近5倍的提高。在包覆了无机ZnS材料硫化锌之后,将该材料分散在甲苯溶液中,与未包覆硫化锌的纳米簇样品相比较,以溶液形式保存30 小时后,光谱测试表明,包覆后的材料其特征吸收峰没有明显变化,没有受到特别大的影响;而未包覆硫化锌壳层的单纯砷化镉纳米簇材料的吸收光谱,在三十分钟的时间内就发生了变化,3.0小时后即近乎完全消失,说明硫化锌材料的外延生长是成功的,对纳米簇材料的稳定性特别是抗氧化能力有显著的提高。本领域技术人员根据该实施例的描述,可以采用现有技术中其他的方式来对纳米簇材料进行了无机惰性材料的包覆。
在一个具体的实施方式中,还包括样品纯化。例如,制备的砷化镉纳米簇首先分散在少量正己烷溶液中,以极性溶剂丙酮作为沉淀剂的条件下,以 4000转每分钟的转速离心10min,分离后的沉淀物再次分散到甲苯溶液中,以甲醇溶液作为沉淀剂,再次以同样参数离心10min。分离沉淀后的产物再次分散到非极性溶剂中用于测试表征。需要注意的是,制备的砷化镉纳米簇材料,以溶液形式存在时较不稳定,极易被氧化,因此提纯过程需要在手套箱中进行,使用的各溶剂均经过无水无氧处理,粉末干燥过程必须在真空烘箱中进行,各项操作均需严谨认真。
配体层用于促进量子点材料结构分散。
在半导体纳米簇材料的制备体系当中,配体的选择是十分重要的,配体的种类和用量直接影响制备效果。配体层可用于控制纳米粒子的尺寸、形貌、活性以及生长过程。本实施例中,配体层为能够促进材料分散,同时造成材料荧光淬灭的有机配体。例如吡啶、有机酸、烷基硫醇、巯基酸、巯基胺、有机酸、有机胺、有机磷等。本实施例通过有机分子配体的使用,量子点材料形貌和结构实现了更为精细的调控。在一个优选的实施例中,配体层用于促进量子点材料结构分散在色阻体系中。本领域技术人员根据该实施例的描述,可以采用现有技术中其他的方式来置备配体层。
在一个具体的实施方式中,量子点壳可以是ZnSe,ZnS,ZnO、SiO2或者量子点水凝胶等材料。
本实施例中,量子点壳为无机保护壳,包括ZnSe,ZnS,ZnO,SiO2等材料的一种或多种组合,也包括其他高稳定性复合量子点。例如,水凝胶装载量子点结构等。量子点壳具有阻隔作用,能够保护量子点核,防止材料发生熟化、刻蚀、分解、氧化等变质现象。
在一个具体的实施方式中,量子点配体层可以是
吡啶、有机酸、烷基硫醇、巯基酸、巯基胺、有机酸、有机胺或者有机磷等材料。
本实施例中,量子点配体层为有机配体,包括有机胺、有机酸、烷基硫醇、有机磷,吡啶等量子点常见配体。量子点配体层包括促进材料分散的作用。
在一个具体的实施方式中,预定波长为535nm。
发明实施例还提供了一种液晶显示装置,图2为根据本发明实施例的一种液晶显示装置结构图。如图2所示,包括上述实施例及优选实施例中的任一种量子点材料结构和色阻层;其中,色组层23包括红色色阻232、蓝色色阻231、绿色色阻233;
本实施例中,液晶显示装置的结构可根据具体情况设置。例如,液晶显示装置从上到下包含以下结构:碳纤维衬底22、色阻层、上偏光片21、液晶层24、薄膜晶体管阵列层25、下偏光片26、导光板27和LED28。本实施例中,偏光片优选为内置偏光片。个LED28出射的光,经过下偏光片26 选择吸收后变为线偏振光。该先偏振光透过薄膜晶体管阵列层25后到达液晶层24,对液晶的控制信号由薄膜晶体管阵列开关来完成。通过控制薄膜晶体管阵列开关,相应的薄膜晶体管阵列器件周围电场发生变化,液晶分子随之发生转动,线偏振光选择性透过。有过液晶的线偏振光再经过色组层23 的选择性吸收以及与与下偏光片26吸收轴互相垂直的上偏光片21,就可以显示多姿多彩的画面。本领域技术人员根据该实施例的描述,可以采用现有技术中其他方式来制成液晶显示装置。
色阻层可以精确地透过小范围波段的光波,吸收掉其它波段的光波。本实施例中,色组层23的置备方法可根据具体情况设置。例如,色组层23的工艺制程顺序一般是:光阻涂布、前烘、曝光、显影、后烘。光阻涂布前需进行玻璃基板清洗,以保证基板表面清洁。光阻涂布常用方案旋转涂布和辊印涂布。但旋转涂布不适用于大面积涂胶,故LCD生产一般使用辊印涂布方式。光阻涂布需控制的参数主要为涂布速度以及吐出量,这两个参数直接影响了膜厚与涂布均匀性。烘烤的主要目的是使光阻内溶剂挥发,减少涂布后残留溶剂,增强光阻与玻璃基板的附着力。其加热原理是使用热电偶分区域加热。温度和时间是影响前烘质量的主要因素。曝光制程需在黄光区进行。曝光是通过UV光透过掩模版将影像转移到玻璃基板表面上,使照射到的光阻发生化学反应。接触式,近场式,投影式是目前常用的三种曝光光学***。曝光的主要控制参数是曝光量、光源到基板之间的距离以及曝光时间。曝光过程直接影响到所需图案的精度,是整个制程中最重要的一个环节。显影是将不需要的图案部分以显影液溶解掉,使影像能完整的呈现在基板上。对于正性光阻,显影会将曝光部分溶解掉;对于负性光阻,显影则是将未曝光部分溶解掉。彩色滤光膜一般使用负性光阻。显影需要严格控制显影液溶度以及显影时间。显影不足或者显影过度都会严重影响图案精度,从而对显示效果造成影响。后烘是将光阻内的溶剂赶走,使光阻进行热聚合反应,增加光阻化学稳定性,以去除水分,使膜层坚固。后烘需考虑温度均匀性以及膜层耐热性。
在一个具体的实施方式中,量子点材料结构分散于红色色阻和蓝色色阻中。
本实施例中,将上述量子点材料分别分散在红色色阻和蓝色色阻中,涂布成膜。本实施例能够改善蓝色色阻530nm左右的漏光,提高蓝色色阻色纯度。本实施例能够解决现有技术中由于RGB色阻不能够完全吸收其他波长的光导致液晶显示器件色纯度降低、色域降低影响视觉效果的问题。传统的提升色域的方法是增加色阻膜厚。通过比较不同厚度的RGB色阻的光谱可知,随着膜厚的增大,光谱的透过率下降明显,半峰高宽也在减小。RGB 色阻的膜厚变化近似满足朗伯一比尔定律:当一束平行单色光垂直通过某一均勻非散射的吸光物质时,其吸光度A与吸光物质的浓度c及吸收层厚度b成正比。虽然透过RGB光阻的光并不是单色光,而是波段较窄的光谱;且RGB光阻的颜料粒子也存在着散射作用,RGB光阻的膜厚变化会有所偏离朗伯一比尔定律,但对于分析RGB光阻的光谱随膜厚的变化趋势并没有影响。与传统的采用加厚RGB色阻膜厚的方案来提升色域相比,本发明实施例可避免对亮度的影响。与现有的在RGB色阻中加入其他吸收材料提高色域的方法相比,本发明能效更高,成本更低。
在一个具体的实施方式中,液晶显示装置还包括蓝色二极管光源。
本实施例中,蓝色二极管光源为光谱为蓝光,蓝光波长可选为 430-450nm。
发明实施例还提供了一种液晶显示装置,图3为根据本发明实施例的另一种液晶显示装置结构图。如图3所示,该液晶显示装置包括色阻层和偏光层。
色组层33包括红色色阻332、蓝色色阻331和绿色色阻333;
偏光层上对应红色色阻332和蓝色色阻331的投影位置361涂抹有上述实施例及优选实施例中的任一种量子点材料结构。
本实施例中,液晶显示装置的结构可根据具体情况设置。例如,上偏光片31、碳纤维衬底32、色阻层、液晶层34、薄膜晶体管阵列层35、下偏光片36、导光板和LED。本实施例能够解决现有技术中由于RGB色阻不能够完全吸收其他波长的光导致液晶显示器件色纯度降低、色域降低影响视觉效果的问题。与传统的采用加厚RGB色阻膜厚的方案来提升色域相比,本发明实施例可避免对亮度的影响。与现有的在RGB色阻中加入其他吸收材料提高色域的方法相比,本发明能效更高,成本更低。
在一个具体的实施方式中,偏光层包括上偏光片31和下偏光片36:
量子点材料结构涂抹于下偏光片36。
本实施例中,量子点材料结构可单独分散于光固化树脂中,涂布于LCD 下偏光片36外侧,并图案化。使图案与蓝色色阻331和红色色阻332对应,避免该量子点材料结构对绿色画面的影响。
在一个具体的实施方式中,量子点材料结构涂抹于下偏光片36外侧。
本发明实施例还提供了一种电子设备,包括上述实施例及优选实施例中的任一种液晶显示装置。
虽然结合附图描述了本发明的实施例,但是本领域技术人员可以在不脱离本发明的精神和范围的情况下作出各种修改和变型,这样的修改和变型均落入由所附权利要求所限定的范围之内。
Claims (10)
1.一种液晶显示装置,其特征在于,包括量子点材料结构和色阻层;其中,所述量子点材料结构由内而外依次包括:量子点核、量子点壳和量子点配体层;
所述量子点核包括砷化镉纳米簇;所述量子点核用于吸收预定波长的绿光;
所述量子点壳用于保护所述量子点核;
所述配体层用于促进量子点材料结构分散;
所述色阻层包括红色色阻、蓝色色阻、绿色色阻;
所述量子点材料结构分散于所述红色色阻和所述蓝色色阻中。
2.根据权利要求1所述的液晶显示装置,其特征在于,所述量子点壳包括以下材料中的一种或几种:
ZnSe,ZnS,ZnO、SiO2或者量子点水凝胶。
3.根据权利要求1所述的液晶显示装置,其特征在于,所述量子点配体层包括以下材料中的一种或几种:
吡啶、有机酸、烷基硫醇、有机胺或者有机磷,其中所述有机酸包括巯基酸,所述有机胺包括巯基胺。
4.根据权利要求1所述的液晶显示装置,其特征在于,所述液晶显示装置还包括蓝色二极管光源。
5.一种液晶显示装置,其特征在于,包括色阻层和偏光层;
所述色阻层包括红色色阻、蓝色色阻和绿色色阻;
所述偏光层上对对所述红色色阻和所述蓝色色阻的投影位置涂抹量子点材料结构;
所述量子点材料结构由内而外依次包括:量子点核、量子点壳和量子点配体层;
所述量子点核包括砷化镉纳米簇;所述量子点核用于吸收预定波长的绿光;
所述量子点壳用于保护所述量子点核;
所述配体层用于促进量子点材料结构分散。
6.根据权利要求5所述的液晶显示装置,其特征在于,所述量子点壳包括以下材料中的一种或几种:
ZnSe,ZnS,ZnO、SiO2或者量子点水凝胶。
7.根据权利要求5所述的液晶显示装置,其特征在于,所述量子点配体层包括以下材料中的一种或几种:
吡啶、有机酸、烷基硫醇、有机胺或者有机磷,其中所述有机酸包括巯基酸,所述有机胺包括巯基胺。
8.根据权利要求5所述的液晶显示装置,其特征在于,所述偏光层包括上偏光片和下偏光片:
所述量子点材料结构涂抹于所述下偏光片。
9.根据权利要求8所述的液晶显示装置,其特征在于,所述量子点材料结构涂抹于所述下偏光片外侧。
10.一种电子设设,其特征在于,包括权利要求5-9中任一所述的液晶显示装置。
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