CN111257982A - Monocrystalline silicon grating guided-mode resonance filter - Google Patents
Monocrystalline silicon grating guided-mode resonance filter Download PDFInfo
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- CN111257982A CN111257982A CN202010065429.4A CN202010065429A CN111257982A CN 111257982 A CN111257982 A CN 111257982A CN 202010065429 A CN202010065429 A CN 202010065429A CN 111257982 A CN111257982 A CN 111257982A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/203—Filters having holographic or diffractive elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Abstract
The invention discloses a monocrystalline silicon grating guided-mode resonance filter. The filter is used for manufacturing a guided mode resonance structure based on the monocrystalline silicon grating, realizing the spectral filtering of linearly polarized light, and adjusting a resonance peak by changing the period of the monocrystalline silicon grating and the thickness of the high-refractive-index film. The TM linear polarized light filter comprises a high-refractive-index thin film layer germanium and a monocrystalline silicon grating layer; the TE linearly polarized light filter comprises a silicon dioxide thin film layer, a germanium thin film layer and a monocrystalline silicon grating layer. Linearly polarized light in TM and TE modes is vertically incident on the monocrystalline silicon triangular grating, and filtering of incident spectrum is achieved in the reflection direction. The monocrystalline silicon grating in the reflective optical filter structure is etched by a wet method, reactive ion etching is not needed in structural processing, and the preparation cost and difficulty of the device are reduced.
Description
Technical Field
The invention relates to an optical device, in particular to a monocrystalline silicon grating guided-mode resonance filter.
Background
The guided mode resonance filter is a new and unique optical filter that reflects a narrow band of wavelengths over a wide range of wavelengths with nearly 100% efficiency, and can resonate to eliminate all higher order diffracted waves under the zero order imposed by a diffraction element with a suitably high spatial frequency. The resonant waveguide grating filter provides a potential choice for the design of new filters due to its unique performance and simple structure. In addition, the guided mode resonance filter has wide application in the fields of biosensors, broadband reflectors, polarizers, and the like. However, although the guided mode resonance filter has unique advantages, parameters such as period, groove depth, thickness of the waveguide layer, etc. have a great influence on it. Much work is currently being focused on improving the design of guided mode resonance filters to reduce manufacturing difficulties and achieve high quality performance. So far, most of the fabrication processes of guided mode resonance filters transfer the mask by ion beam etching, and in the actual fabrication process, the accurate transfer of the mask, the control of etching time and etching rate play an important role in the final performance of the filter, and the ion beam etcher is an expensive equipment, which undoubtedly increases the processing cost of such devices.
It can be seen that the prior art guided mode resonance filter has a disadvantage of high cost in manufacturing.
Disclosure of Invention
Aiming at the problems, the invention provides a monocrystalline silicon grating guided-mode resonance filter.
In order to achieve the object of the present invention, there is provided a single crystal silicon grating guided mode resonance filter, comprising: a germanium thin film layer and a monocrystalline silicon grating layer; the top end of the monocrystalline silicon grating layer is provided with a plurality of sawtooth-shaped protrusions with the same size, the bottom edges of the sawtooth-shaped protrusions are all on a bottom edge straight line, and included angles formed by two side edges of each sawtooth-shaped protrusion and the bottom edge straight line are equal; the germanium thin film layer is a first thin film layer formed by plating germanium on the surfaces of the saw-tooth-shaped protrusions; the germanium film layer is an incident surface and a reflecting surface and is used for receiving TM linear polarized light which is vertically incident and then used as the reflecting surface for reflecting reflected light.
In one embodiment, the TM linear polarized light enters the surface of the germanium thin film layer in a direction perpendicular to the bottom line, and is reflected from the surface of the germanium thin film layer to obtain a reflected light ray, wherein the reflected light ray is 0-level light, and the reflection direction is completely opposite to the incidence direction.
In one embodiment, the single crystal silicon grating layer forms a base of the single crystal silicon grating guided mode resonance filter.
Wherein in one embodiment, the sets of sides of the single crystal silicon grating layer are parallel to each other.
In one embodiment, the single crystal silicon grating guided mode resonance filter further comprises: and the silicon dioxide anti-reflection layer is a second thin film layer formed by plating silicon dioxide on the surface of the germanium thin film layer.
In one embodiment, the TE linearly polarized light enters the silica anti-reflection layer surface in a direction perpendicular to the bottom line, and is reflected from the silica anti-reflection layer surface to obtain a reflected light ray, where the reflected light ray is 0-order light, and the reflection direction is completely opposite to the entering direction.
In one embodiment, the length of the bottom edge of each serration is set in the range of 1-2 μm.
In one embodiment, the thickness of the first thin film layer is set to 200-600 nm.
Wherein the included angle is equal to 54.74 degrees.
Wherein the thickness range of the second thin film layer is set to 200-600 nm.
According to the monocrystalline silicon grating guided-mode resonance filter, the monocrystalline silicon grating structure is prepared by utilizing the anisotropy of monocrystalline silicon and adopting chemical wet etching, so that a more convenient way is provided for manufacturing the guided-mode resonance filter based on the monocrystalline silicon grating. And the preparation process of the monocrystalline silicon guided-mode resonance filter is simple, expensive equipment such as an ion beam etching machine is avoided, the manufacturing cost is reduced, the economic benefit is high, and the application is wide.
Drawings
FIG. 1 is a schematic diagram of a single crystal silicon guided mode resonance filter for TM polarized light according to an embodiment;
FIG. 2 is a schematic diagram of an embodiment of a single crystal silicon guided mode resonance filter for TE polarized light;
FIG. 3 is a plot of reflection line simulations for one embodiment of TM linear polarized light incidence;
FIG. 4 is a graph of simulation of reflection lines at the incidence of TE linearly polarized light, according to one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a single crystal silicon guided mode resonance filter for TM polarized light in an embodiment, including: a germanium thin film layer 1 and a monocrystalline silicon grating layer 2; the top end of the monocrystalline silicon grating layer 2 is provided with a plurality of sawtooth-shaped protrusions with the same size, the bottom edges of the sawtooth-shaped protrusions are all on a bottom edge straight line, and included angles formed by two side edges of each sawtooth-shaped protrusion and the bottom edge straight line are equal; the germanium thin film layer 1 is a first thin film layer formed by plating germanium on the surfaces of the saw-tooth-shaped protrusions; the germanium film layer 1 is an incident surface and a reflecting surface, and is used for receiving perpendicularly incident TM linear polarized light and then used as a reflecting surface for reflecting reflected light.
The bottom line is a straight line passing through the bottom edges of the respective serrations.
The filter related to the patent is divided into two structures, one is for TE linearly polarized light, and the other is for TM linearly polarized light. Different structures are selected for different polarized light. The common point is that the grating is all based on monocrystalline silicon grating, and the surfaces are all plated with germanium films. In the embodiment shown in fig. 1, the filter structure is for TM linearly polarized light, and includes a germanium thin film layer 1 and a monocrystalline silicon grating layer 2. The single crystal silicon grating guided mode resonance filter in this embodiment is a guided mode resonance structure manufactured based on a single crystal silicon grating, and realizes spectral filtering of linearly polarized light. The resonant peak is adjusted by changing the period of the monocrystalline silicon grating and the thickness of the high-refractive-index film. The filter can filter TM and TE linearly polarized light.
In one embodiment, the single crystal silicon grating layer 2 forms a substrate of the single crystal silicon grating guided mode resonance filter.
The top end of the monocrystalline silicon grating layer 2 is provided with a plurality of saw-tooth-shaped protrusions with the same size, which are obtained by anisotropic wet etching, according to the wet etching process of the monocrystalline silicon grating, as the arrangement on the 111 surface of the monocrystalline silicon is tighter than that on the 100 surface, the etching speed of the alkaline solution to the 100 surface is much faster than that of the 111 surface, a monocrystalline silicon triangular grating is formed after long-time etching, and the monocrystalline silicon triangular grating is used as a substrate of a guided mode resonance filter, and a guided mode resonance structure is constructed on the substrate. The monocrystalline silicon grating structure prepared by chemical wet etching has good grating period and groove structure. Moreover, the groove-shaped structure of the grating obtained by wet etching is formed by monocrystalline silicon fixed crystal faces, and the parameter error is small.
In one embodiment, the TM linear polarized light is incident on the surface of the germanium thin film layer 1 in a direction perpendicular to the bottom line, and then is reflected from the surface of the germanium thin film layer 1 to obtain a reflected light, where the reflected light is 0-order light, and the reflection direction is completely opposite to the incident direction.
In this embodiment, when linearly polarized light of the TM mode is perpendicularly incident on the structure, filtering is achieved in the direction of reflection. And the incident light is linearly polarized light in a TM mode, the reflected light is still linearly polarized light in the TM mode, and the work of the monocrystalline silicon grating guided-mode resonance filter is based on a guided-mode resonance structure, so that the reflected light obtains a resonance peak in the reflection direction, the light with a specific wavelength can be automatically filtered, and the high reflection efficiency is obtained at the designed wavelength.
Wherein, in one embodiment, the groups of sides of the monocrystalline silicon grating layer 2 are parallel to each other.
Referring to fig. 1, in an embodiment, the top end of the single crystal silicon grating layer 2 has a plurality of serrations with the same size, the base edges of the serrations are all on the same base line, and two side edges of each serration form an equal included angle with the base line, so that the sets of side surfaces of the single crystal silicon grating layer 2 are parallel to each other, i.e., the sets of side surfaces extending in the same direction are parallel to each other.
Wherein, in one embodiment, the single crystal silicon grating guided-mode resonance filter further comprises: and the silicon dioxide anti-reflection layer 3 is a second thin film layer formed by plating silicon dioxide on the surface of the germanium thin film layer 1.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a single crystal silicon guided mode resonance filter for TE polarized light in an embodiment, and the filter structure for TE polarized light includes a silica anti-reflection layer 3, a germanium thin film layer 1 and a single crystal silicon grating layer 2. The second film layer is a silicon dioxide film layer formed by plating silicon dioxide on the surface of the germanium film layer 1.
In one embodiment, the TE linearly polarized light is incident on the surface of the silica anti-reflection layer 3 in a direction perpendicular to the bottom line, and then is reflected from the surface of the silica anti-reflection layer 3 to obtain a reflected light ray, where the reflected light ray is 0-order light, and the reflection direction is completely opposite to the incident direction.
In this embodiment, after linearly polarized light in the TE mode is perpendicularly incident on the structure, filtering is achieved in the reflection direction. And the incident light is linearly polarized light in a TE mode, the reflected light is still linearly polarized light in the TE mode, and the work of the monocrystalline silicon grating guided-mode resonance filter is based on a guided-mode resonance structure, so that the reflected light obtains a resonance peak in the reflection direction, and the light with specific wavelength can be automatically filtered.
In one embodiment, the serrations have a base side length in the range of 1-2 μm.
The filter structure of the patent takes a monocrystalline silicon grating layer 2 as a substrate, the top end of the monocrystalline silicon grating layer 2 is provided with a plurality of sawtooth-shaped protrusions with the same size, and the length range of the bottom sides of the sawtooth-shaped protrusions is set to be 1-2 μm.
In one embodiment, the thickness of the first thin film layer is set to 200-600 nm.
The first thin film layer is a germanium thin film layer formed by plating germanium on the surface of the sawtooth-shaped protrusion, and the thickness range of the germanium thin film layer is set to be 200-600 nm.
In one embodiment, the included angle is equal to 54.74 degrees.
The top end of the monocrystalline silicon grating layer 2 is provided with a plurality of sawtooth-shaped protrusions with the same size, the bottom edges of the sawtooth-shaped protrusions are all on the bottom edge straight line, the included angles formed by the two side edges of each sawtooth-shaped protrusion and the bottom edge straight line are equal, and the numerical value is 54.74 degrees.
In one embodiment, the thickness of the second thin film layer is set to 200-600 nm.
In this embodiment, the silicon dioxide anti-reflection layer 3 is a silicon dioxide thin film layer formed by plating silicon dioxide on the surface of the germanium thin film layer 1, and the thickness range of the silicon dioxide thin film layer is set to 200-600 nm.
In one embodiment, the base angle θ (i.e., the included angle between the two sides of each sawtooth protrusion and the base line) of the triangular single-crystal silicon grating layer shown in fig. 1 is set to 54.74 degrees, and when the period Λ of the grating layer (i.e., the length of the base line of the sawtooth protrusion) is 1.3 μm and 1.4 μm, respectively, and the thickness of the germanium thin-film layer is dg1 ═ 400nm, as shown in fig. 3, reflective filtering for TM linearly polarized light can be achieved at 2.26 μm and 2.43 μm, respectively.
In one embodiment, as shown in fig. 4, for the reflection spectrum of the TE linearly polarized light, when the period Λ of the grating layer is 1.1 μm and 1.2 μm, respectively, the thickness dg2 of the germanium thin film is 400nm, and the thickness dw2 of the silicon dioxide anti-reflection thin film layer is 400nm, the reflection filtering for the TE linearly polarized light can be realized at 1.91 μm and 2.09 μm, respectively.
The calculation simulation of the structure shows that the filtering peak value can be regulated and controlled along with the change of the thickness of the thin film layer and the period of the grating.
When the monocrystalline silicon grating guided-mode resonance filter is used, when linearly polarized light in a TM (TM means that the electric field vibration direction of the linearly polarized light is perpendicular to the line direction) mode and a TE (TE means that the electric field vibration direction of the linearly polarized light is parallel to the line direction) mode is perpendicularly incident on a structure, a filtering spectrum is obtained in the reflection direction. The filter related to the patent can reduce the manufacturing cost and has the advantages of simple preparation process, high economic benefit, wide application and the like.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
It should be noted that the terms "first \ second \ third" referred to in the embodiments of the present application merely distinguish similar objects, and do not represent a specific ordering for the objects, and it should be understood that "first \ second \ third" may exchange a specific order or sequence when allowed. It should be understood that "first \ second \ third" distinct objects may be interchanged under appropriate circumstances such that the embodiments of the application described herein may be implemented in an order other than those illustrated or described herein.
The terms "comprising" and "having" and any variations thereof in the embodiments of the present application are intended to cover non-exclusive inclusions. For example, a process, method, apparatus, product, or device that comprises a list of steps or modules is not limited to the listed steps or modules but may alternatively include other steps or modules not listed or inherent to such process, method, product, or device.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A single crystal silicon grating guided-mode resonance filter, comprising: the device comprises a germanium thin film layer (1) and a monocrystalline silicon grating layer (2); the top end of the monocrystalline silicon grating layer (2) is provided with a plurality of sawtooth-shaped protrusions with the same size, the bottom edges of the sawtooth-shaped protrusions are all on a bottom edge straight line, and included angles formed by two side edges of each sawtooth-shaped protrusion and the bottom edge straight line are equal; the germanium thin film layer (1) is a first thin film layer formed by plating germanium on the surfaces of the saw-tooth-shaped protrusions; the germanium film layer (1) is an incident surface and a reflecting surface and is used for receiving TM linear polarized light which is vertically incident and then used as the reflecting surface for reflecting reflected light.
2. The single crystal silicon grating guided mode resonance filter of claim 1, wherein the single crystal silicon grating layer (2) constitutes a substrate of the single crystal silicon grating guided mode resonance filter.
3. The single crystal silicon grating guided-mode resonance filter of claim 2, wherein the TM linearly polarized light is incident on the surface of the germanium thin film layer (1) in a direction perpendicular to the bottom line, and then is reflected from the surface of the germanium thin film layer (1) to obtain a reflected light, wherein the reflected light is 0-order light, and the reflection direction is completely opposite to the incident direction.
4. The single crystal silicon grating guided mode resonance filter of claim 1, wherein the sets of sides of the single crystal silicon grating layer (2) are parallel to each other.
5. The single crystal silicon grating guided mode resonance filter of claim 4, further comprising: and the silicon dioxide anti-reflection layer (3) is a second thin film layer formed by plating silicon dioxide on the surface of the germanium thin film layer (1).
6. The single crystal silicon grating guided-mode resonance filter of claim 5, wherein TE linearly polarized light is incident on the surface of the silicon dioxide anti-reflection layer (3) in a direction perpendicular to the bottom line, and is reflected from the surface of the silicon dioxide anti-reflection layer (3) to obtain a reflected light ray, wherein the reflected light ray is 0-order light, and the reflection direction is completely opposite to the incident direction.
7. The single crystal silicon grating guided mode resonance filter of claim 6, wherein the length of the bottom side of each serration is set to a range of 1-2 μm.
8. The single crystal silicon grating guided mode resonance filter of claim 1, wherein the thickness range of the first thin film layer is set to 200-600 nm.
9. The single crystal silicon grating guided mode resonance filter of claim 8, wherein the included angle is equal to 54.74 degrees.
10. The single crystal silicon grating guided mode resonance filter of claim 5, wherein the thickness range of the second thin film layer is set to 200-600 nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113391388A (en) * | 2021-05-27 | 2021-09-14 | 扬州大学 | PDMS (polydimethylsiloxane) -based peak value continuously variable guided mode resonance optical filter and preparation method thereof |
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