CN111200046B - LED chip structure and manufacturing method thereof - Google Patents
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- CN111200046B CN111200046B CN202010031515.3A CN202010031515A CN111200046B CN 111200046 B CN111200046 B CN 111200046B CN 202010031515 A CN202010031515 A CN 202010031515A CN 111200046 B CN111200046 B CN 111200046B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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Abstract
The embodiment of the invention provides an LED chip structure and a manufacturing method thereof, relating to the technical field of semiconductors. The manufacturing method of the LED chip structure comprises the steps of carrying out smoothing treatment on the surface of the metal reflector before the metal barrier layer is manufactured, and then depositing and manufacturing the metal barrier layer. And then annealing the combined structure of the metal reflector and the metal barrier layer. By the manufacturing method, on the premise of ensuring good performance of the reflector, the deposition quality of the barrier metal is improved, the stress effect of the metal barrier layer is reduced, the process adjustment process is obviously simplified, the transportability and compatibility of the process are enhanced, and the reliability of the LED chip structure is improved. The LED chip structure provided by the embodiment of the invention is prepared by the manufacturing method of the embodiment of the invention, and the bonding property of the metal barrier layer and the metal reflector is good, so that the reliability is higher.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an LED chip structure and a manufacturing method thereof.
Background
The LED has the advantages of low energy consumption, high brightness, long service life, environmental protection, wide wavelength range and the like, and is widely applied to the fields of display, communication, common illumination, disinfection, solidification and the like. In the LED chip structure using the metal reflector, the metal reflector has high metal activity, a surface is easily oxidized, and the metal reflector has electromigration characteristics, so that a metal barrier layer that can block metal diffusion of the reflector and has stable properties needs to be covered on the metal reflector. In order to improve the ohmic contact between the mirror and the epitaxial layer, annealing and other treatments are required, so that the surface of the mirror is roughened, and the phenomena of metal balling, metal agglomeration and the like occur. This results in poor bonding of the reflector and the barrier layer, which reduces the reliability of the LED chip structure.
Disclosure of Invention
The invention aims to provide an LED chip structure and a manufacturing method thereof, which can improve the bonding property of a metal reflector and a metal barrier layer, so that the reliability of the LED chip structure is improved.
Embodiments of the invention may be implemented as follows:
in a first aspect, an embodiment provides a method for manufacturing an LED chip structure, including:
forming an n-type layer, a multi-quantum well layer and a p-type layer which are connected layer by layer on a substrate;
depositing a metal reflector on the p-type layer;
smoothing the surface of the metal reflector;
depositing a metal barrier layer on the surface of the metal reflector;
annealing the metal reflector and the metal barrier layer together;
and manufacturing an insulating layer, an n electrode and a p electrode to obtain the LED chip structure.
In an alternative embodiment, the smoothing process comprises at least one of an oxidation etch, a plasma bombardment, an ultrasonic treatment, a lapping and polishing, a laser etching, a solution etching, a deposition of a metal transition layer.
In an alternative embodiment, depositing a metal barrier layer on a surface of a metal mirror comprises:
and depositing a layer of barrier layer metal on the surface of the metal reflector by adopting an electron beam evaporation or magnetron sputtering process, and forming a metal barrier layer by photoetching, wet/dry etching or metal stripping process.
In alternative embodiments, the atmosphere in which the metal mirror and the metal barrier layer are co-annealed is a combination of one or more of nitrogen, argon, vacuum, air, and the like.
In an alternative embodiment, the metal mirror and the metal barrier layer are co-annealed at a temperature of 100 ℃ to 300 ℃ for a time of 1 minute to 30 minutes.
In an alternative embodiment, the metal reflector is made of an alloy of one or more of Ag, Al, Pb, Ni, Rh, Pt, Au, and Ti.
In an alternative embodiment, the material of the metal barrier layer is one or more of Ti, Ta, Ni, Al, Au, Pt, Pb, W, TiW, TiN, TaN, and the like.
In an alternative embodiment, before the step of smoothing the surface of the metal mirror, the method further includes:
and annealing the metal reflector deposited and formed on the p-type layer.
In an alternative embodiment, the step of manufacturing the insulating layer, the n-electrode and the p-electrode to obtain the LED chip structure includes:
removing the p-type layer, the multi-quantum well layer and part of the n-type layer in the target area by adopting an etching process to expose the surface of the n-type layer;
depositing insulating layers on the surface of the metal barrier layer, the surface of the n-type layer, the surface of the p-type layer and the side wall of the target area;
removing the insulating layer in the electrode manufacturing area by adopting an etching process to form an n-electrode contact opening area exposing the surface of the n-type layer and a p-electrode contact opening area exposing the metal barrier layer;
an n-electrode contacting the surface of the n-type layer and a p-electrode contacting the metal barrier layer are formed in the n-electrode contact opening region and the p-electrode contact opening region, respectively.
In a second aspect, the embodiment provides an LED chip structure, which is manufactured by using the manufacturing method of the LED chip structure in any one of the foregoing embodiments.
The embodiment of the invention has the beneficial effects that:
the manufacturing method of the LED chip structure comprises the steps of carrying out smoothing treatment on the surface of the metal reflector before the metal barrier layer is manufactured, and then depositing and manufacturing the metal barrier layer. Then, the combined structure of the metal reflector and the metal barrier layer is annealed. By the manufacturing method, on the premise of ensuring good performance of the reflector, the deposition quality of the barrier metal is improved, the stress effect of the metal barrier layer is reduced, the process adjustment process is obviously simplified, the transportability and compatibility of the process are enhanced, and the reliability of the LED chip structure is improved.
The LED chip structure provided by the embodiment of the invention is prepared by the manufacturing method of the embodiment of the invention, and the metal barrier layer and the metal reflector are good in combination, so that the reliability is higher.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
FIG. 1 is a flow chart of a method for fabricating an LED chip structure according to an embodiment of the present invention;
fig. 2 to 7 are schematic diagrams of different shapes of the LED chip structure provided in the embodiment of the invention in the manufacturing process.
An icon: 1-a substrate; 2-composite layer; a 3-n type layer; a 3A-n type layer surface; 4-a multi-quantum well layer; a 5-p type layer; 6-a metal mirror; 7-a metal barrier layer; 8-an insulating layer; a 9A-n electrode contact opening region; a 9B-p electrode contact opening region; a 10A-n electrode; 10B-p electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
In the preparation process of the LED chip, particularly the flip LED chip, the manufacture of the reflector and the barrier layer is a key process. The flip LED chip adopting the metal reflector has the advantages of good current expansion, low voltage, small thermal resistance, higher current density driving, higher light-emitting efficiency after packaging than that of a normally-installed and vertical LED, and production cost only equivalent to that of the normally-installed LED. In order to improve the ohmic contact between the metal mirror and the epitaxial layer, annealing and other treatments are required, so that the surface of the metal mirror is roughened, and the phenomena of metal balling, metal agglomeration and the like occur. The increase of the surface roughness of the metal reflector causes the problem of combination with the barrier layer, the stress of the thin film of the barrier layer is increased and is not uniformly distributed, the barrier layer containing hard metal can bubble, fall off, fracture and the like, the barrier layer fails, and the reliability of a chip is reduced and even the electric leakage is caused. The stress process of adjusting the barrier layer by changing the sputtering process is long, and can be adjusted according to the transfer requirement of the preparation environment, so that the requirements of industrial production can not be met in time.
In order to overcome the defects, the application provides a method for manufacturing an LED chip structure, which can be applied to manufacturing a flip-chip LED chip structure. In addition, the embodiment of the application also provides an LED chip structure manufactured by the manufacturing method of the LED chip structure.
Fig. 1 is a flowchart of a method for manufacturing an LED chip structure according to an embodiment of the present invention. Referring to fig. 1, the present embodiment provides a method for manufacturing an LED chip structure, including:
step S100, forming an n-type layer, a multi-quantum well layer and a p-type layer which are connected layer by layer on a substrate.
As shown in fig. 2, a composite layer 2, an n-type layer 3, a multiple quantum well layer 4, and a p-type layer 5 are grown in this order on an epitaxial substrate 1. Wherein the composite layer comprises a nucleation layer and a buffer layer. In the present embodiment, the substrate 1 may be sapphire, silicon carbide, gallium oxide, gallium nitride, graphene, or the like.
And step S200, depositing and forming a metal reflector on the p-type layer.
As shown in fig. 3, the surface of the p-type layer 5 is cleaned and surface treated, and a layer of mirror metal, such as Ni/Ag/Ni (1nm/150nm/5nm), is deposited on the surface of the p-type layer 5 by electron beam evaporation or magnetron sputtering process. The metal mirror 6 is formed by photolithography, wet etching, or metal lift-off process, and the metal mirror 6 is brought into p-ohmic contact with the p-type layer by an annealing process. The metal reflector 6 may be made of one or more of Ag, Al, Pb, Ni, Rh, Pt, Au, Ti, etc. After the metal mirror is deposited, the metal mirror 6 is annealed, the annealing temperature of the metal mirror 6 is 200 ℃ to 600 ℃, and the annealing time is 30 seconds to 5 minutes, for example, the metal mirror 6 is annealed at 400 ℃ for 5 minutes in the air atmosphere, so that the metal mirror 6 and the p-type layer 5 form p-ohmic contact.
Step S300, a surface of the metal mirror is smoothed.
In the embodiment of the present application, the smoothing process may be one or more of oxidation etching, gas plasma bombardment, ultrasonic treatment, grinding and polishing, laser etching, solution etching, deposition of a metal transition layer, and the like.
Step S400, depositing a metal barrier layer on the surface of the metal reflector.
As shown in fig. 4, a barrier metal is deposited on the surface of the metal mirror 6 after the annealing and smoothing processes, and a metal barrier layer 7 is formed by photolithography, wet/dry etching, or a metal lift-off process. The material of the metal barrier layer 7 may be one or more alloys of Ti, Ta, Ni, Al, Au, Pt, Pb, W, TiW, TiN, TaN, and the like. For example, the metal barrier layer 7 may be TiW of 500nm thickness. Through the smoothing treatment, the surface particles of the metal reflector caused by annealing can be reduced, and other problems caused by the rough surface of the reflector are reduced.
And step S500, annealing the metal reflector and the metal barrier layer together.
After the metal barrier layer 7 is formed, the combined structure of the metal reflector 6 and the metal barrier layer 7 is annealed, so that the bonding interface of the metal barrier layer and the metal reflector is improved, the stress of the metal barrier layer 7 is reduced, and the bonding property is improved. The temperature for annealing the metal reflector 6 and the metal barrier layer 7 together may be selected from 100 ℃ to 300 ℃, the annealing time may be selected from 1 minute to 30 minutes, and the annealing atmosphere is one or a combination of more of nitrogen, argon, vacuum, air, and the like. For example, annealing at 150 ℃ is performed for 10 minutes in a nitrogen atmosphere.
Step S600, an insulating layer, an n electrode, and a p electrode are manufactured to obtain an LED chip structure.
Step S600 may be implemented by:
(1) removing the p-type layer, the multi-quantum well layer and part of the n-type layer in the target region by adopting an etching process to expose the surface of the n-type layer;
(2) depositing insulating layers on the surface of the metal barrier layer, the surface of the n-type layer, the surface of the p-type layer and the side wall of the target area;
(3) removing the insulating layer in the electrode manufacturing area by adopting an etching process to form an n-electrode contact opening area exposing the surface of the n-type layer and a p-electrode contact opening area exposing the metal barrier layer;
(4) an n-electrode contacting the surface of the n-type layer and a p-electrode contacting the metal barrier layer are formed in the n-electrode contact opening region and the p-electrode contact opening region, respectively.
Specifically, as shown in fig. 5, a pattern may be first formed by photolithography, and the pattern may demarcate a target region, i.e., a region where a portion of the epitaxial material needs to be removed. And then removing the p-type layer 5, the multi-quantum well layer 4 and part of the n-type layer 3 in the target region by adopting a dry etching process to expose the surface 3A of the n-type layer.
Referring to fig. 6, an insulating layer 8 is deposited on the surface of the metal barrier layer 7, the surface of the n-type layer 3A, p, the surface of the layer 5 and the sidewalls of the target region, and the material of the insulating layer 8 may be SiO2、Si3N4Etc., the thickness can be selected to be 300 nm; an electrode formation region is formed by photolithography on the insulating layer 8, and the insulating layer 8 of the electrode formation region is etched by wet/dry etching to form an n-electrode contact opening region 9A and a p-electrode contact opening region 9B. The n-electrode contact opening region 9A exposes the n-type layer surface 3A, and the p-electrode contact opening region 9B exposes the metal barrier layer 7.
As shown in fig. 7, next, a photolithography process is used to form an n-electrode contact layer region and a p-electrode contact layer region, an electron beam evaporation or magnetron sputtering or electroplating process is used to prepare an electrode contact layer metal (such as Ti/Al/Ni/Au) on the n-electrode contact opening region 9A, p and a part of the insulating layer 8 region in the electrode contact layer region, and an n-electrode 10A and a p-electrode 10B are formed by a metal lift-off process. And finally obtaining the LED chip structure of the embodiment of the application.
The manufacturing method of the LED chip structure provided by this embodiment has at least the following advantages:
1. the smoothing treatment reduces surface particles of the metal reflector 6 caused by annealing and other processes, and reduces other problems caused by rough surface of the reflector;
2. the bonding interface of the metal reflector 6 and the metal barrier layer 7 is improved, the deposition quality of the metal barrier layer is improved, the stress problem of the metal of the barrier layer is solved, and the reliability of a chip process and a device is improved;
3. the process adjustment process is simplified, the portability and the compatibility of the chip process are obviously improved, the transplantation cost of the process is reduced, and the requirements of industrial production can be met in time.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. A manufacturing method of an LED chip structure is characterized by comprising the following steps:
forming an n-type layer, a multi-quantum well layer and a p-type layer which are connected layer by layer on a substrate;
depositing a metal reflector on the p-type layer, and annealing the metal reflector deposited on the p-type layer;
smoothing the surface of the metal reflector;
depositing and forming a metal barrier layer on the surface of the metal reflector;
annealing the metal reflector and the metal barrier layer together, wherein the annealing temperature is 100-300 ℃, and the annealing time is 1-30 minutes;
and manufacturing an insulating layer, an n electrode and a p electrode to obtain the LED chip structure.
2. The method of claim 1, wherein the smoothing process comprises at least one of oxidation etching, plasma bombardment, ultrasonic processing, grinding and polishing, laser etching, solution etching, and deposition of a metal transition layer.
3. The method of claim 1, wherein depositing a metal barrier layer on the surface of the metal reflector comprises:
and depositing a layer of barrier layer metal on the surface of the metal reflector by adopting an electron beam evaporation or magnetron sputtering process, and forming the metal barrier layer by photoetching, wet/dry etching or metal stripping process.
4. The method of claim 1, wherein the annealing of the metal reflector and the metal barrier layer is performed in a combination of one or more of nitrogen, argon, vacuum, and air.
5. The method of claim 1, wherein the metal reflector is made of an alloy of one or more of Ag, Al, Pb, Ni, Rh, Pt, Au, and Ti.
6. The method of claim 1, wherein the metal barrier layer is made of one or more alloys selected from the group consisting of Ti, Ta, Ni, Al, Au, Pt, Pb, W, TiW, TiN, and TaN.
7. The method of claim 1, wherein the step of forming an insulating layer, an n-electrode and a p-electrode to obtain the LED chip structure comprises:
removing the p-type layer, the multi-quantum well layer and part of the n-type layer in the target region by adopting an etching process to expose the surface of the n-type layer;
depositing insulating layers on the surface of the metal barrier layer, the surface of the n-type layer, the surface of the p-type layer and the side wall of the target area;
removing the insulating layer in the electrode manufacturing area by adopting an etching process to form an n-electrode contact opening area exposing the surface of the n-type layer and a p-electrode contact opening area exposing the metal barrier layer;
and forming the n electrode contacting the surface of the n-type layer and the p electrode contacting the metal barrier layer in the n electrode contact opening area and the p electrode contact opening area respectively.
8. An LED chip structure, characterized in that the LED chip structure is manufactured by the method for manufacturing the LED chip structure according to any one of claims 1 to 7.
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| CN103779234A (en) * | 2012-10-18 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device packaging structure and preparing method |
| CN203721754U (en) * | 2014-01-15 | 2014-07-16 | 华灿光电(苏州）有限公司 | Light emitting diode possessing omni-directional reflecting mirror |
| CN108011002A (en) * | 2017-11-30 | 2018-05-08 | 广东省半导体产业技术研究院 | A kind of UV LED chip production method |
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