CN111198481B - Process method for rapidly measuring and calculating reference exposure energy of photosensitive resist - Google Patents
Process method for rapidly measuring and calculating reference exposure energy of photosensitive resist Download PDFInfo
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- CN111198481B CN111198481B CN202010163548.3A CN202010163548A CN111198481B CN 111198481 B CN111198481 B CN 111198481B CN 202010163548 A CN202010163548 A CN 202010163548A CN 111198481 B CN111198481 B CN 111198481B
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- exposure
- energy
- photosensitive resist
- exposure energy
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
Abstract
The invention discloses a process method for rapidly measuring and calculating the reference exposure energy of a photosensitive resist, which is to uniformly coat the photosensitive resist on an exposure screen; then selecting an exposure machine and an energy meter, setting exposure parameters, and then placing the exposure screen plate into the exposure machine for exposure; during exposure, the light data is recorded simultaneously and the reference exposure energy of the photosensitive glue is calculated according to the recorded data. The exposure machine is adopted to directly expose the novel photosensitive resist, and the exposure energy or the exposure time is recorded to calculate the reference exposure energy, so that the times of exposure test are reduced in the test process, the exposure time is shortened, and the reference exposure energy of the novel photosensitive resist can be found more quickly. And the reference exposure energy of the photosensitive resist is calculated, meanwhile, the consumed materials and time in the detection process are saved, the production cost is saved, and the accuracy of the reference energy detection is also improved.
Description
Technical Field
The invention relates to an exposure test method of a photosensitive resist for plate making, in particular to a process method for rapidly measuring and calculating the reference exposure energy of the photosensitive resist.
Background
In the practice of the plate making industry, a novel photosensitive resist needs to be subjected to a standard exposure energy test to obtain an approximately accurate exposure standard range before being put into use, and then more accurate exposure energy verification test and screen exposure effect confirmation work are carried out.
The method commonly used in the prior art for measuring the standard exposure energy of the novel photosensitive resist is a Kottuyi exposure test piece method. The method is a popular method in the industry, namely five films with different shading degrees are designed on one film negative film to carry out exposure with 2 times of predicted exposure energy, and after exposure and development are carried out, the range of the exposure energy which should be approximately in is judged according to the image resolution effect on the shading film. When the Kottuyi exposure test piece is used for exposure test, the predicted exposure energy may have a very large difference with the actual exposure energy, so that all five light-shielding pieces exposed at one time are overexposed and the reference range cannot be judged; or all five light-shielding films in one exposure are underexposed, all screens fall off, and the rough range cannot be judged. Second, this method usually requires two times of exposure energy for testing, and requires multiple tests with different exposure energies to obtain accurate exposure energy. Not only can the exposure range of the photoresist not be accurately measured, but also a great deal of test time cost and test material cost are wasted.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a process method for quickly measuring and calculating the reference exposure energy of the photosensitive resist by placing a novel photosensitive plate film on an exposure machine for pre-exposure and measuring the illumination variation result generated by ultraviolet rays penetrating through the photosensitive plate film in the exposure process to determine the exposure energy.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a process method for rapidly measuring and calculating the reference exposure energy of a photosensitive resist comprises the following steps:
the method comprises the following steps: coating a photosensitive resist, and uniformly coating the photosensitive resist on the exposure screen;
step two: selecting an exposure machine and an energy meter and setting exposure parameters;
step three: placing the exposure screen plate into an exposure machine to start exposure;
step four: simultaneously recording illumination data in the exposure process, and continuously recording exposure energy in the illumination rising process until the illumination does not rise any more;
step five: the reference exposure energy of the photoresist is calculated.
As an improvement of the above technical solution, in the first step, before coating the photoresist, the thickness of the corresponding photoresist exposure plate and the color and thickness of the exposure gauze need to be selected.
As a further improvement of the above technical solution, in the second step, the exposure energy of the exposure machine is first set, and the exposure machine is set to the maximum exposure energy.
As a further improvement of the above technical solution, the method for calculating the reference exposure energy of the photoresist in the fourth step is as follows: the base exposure energy is equal to the set energy minus the energy left before stopping exposure, multiplied by eighty percent.
As a further improvement of the above technical solution, in the second step, the exposure time of the exposure machine is first set, and the exposure machine is set to the maximum exposure time.
As a further improvement of the above technical solution, the method for calculating the reference exposure energy of the photoresist in the fourth step is as follows: the base exposure time is equal to the set time minus the time left before stopping exposure, multiplied by eighty percent.
As a further improvement of the above technical solution, in the fourth step, when recording exposure data, the illuminance is recorded every 10 energy units.
The invention has the beneficial effects that: the exposure machine is adopted to directly expose the novel photosensitive resist, and the exposure energy or the exposure time is recorded to calculate the reference exposure energy, so that the times of exposure test are reduced in the test process, the exposure time is shortened, and the reference exposure energy of the novel photosensitive resist can be obtained more quickly. And the reference exposure energy of the photosensitive resist is calculated, meanwhile, the consumed materials and time in the detection process are saved, the production cost is saved, and the accuracy of the reference energy detection is also improved.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a process flow diagram of the present invention.
Detailed Description
The conception, the specific structure, and the technical effects produced by the present invention will be clearly and completely described below in conjunction with the embodiments and the accompanying drawings to fully understand the objects, the features, and the effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and other embodiments obtained by those skilled in the art without inventive efforts are within the protection scope of the present invention based on the embodiments of the present invention. In addition, all the connection/connection relations referred to in the patent do not mean that the components are directly connected, but mean that a better connection structure can be formed by adding or reducing connection auxiliary components according to specific implementation conditions. All technical characteristics in the invention can be interactively combined on the premise of not conflicting with each other.
Referring to fig. 1, a process for rapidly measuring and calculating the reference exposure energy of a photoresist comprises the following steps:
the method comprises the following steps: coating a photosensitive resist, and uniformly coating the photosensitive resist on the exposure screen; before coating the photosensitive resist, the thickness of the corresponding photosensitive resist exposure plate and the color and thickness of the exposure gauze need to be selected.
Step two: selecting an exposure machine and an energy meter and setting exposure parameters; setting the exposure energy of an exposure machine during the process, wherein the exposure machine is set to be the maximum exposure energy; or the exposure time of the exposure machine is set firstly, and the exposure machine is set to be the maximum exposure time.
Step three: placing the exposure screen plate into an exposure machine to start exposure;
step four: simultaneously recording illumination data in the exposure process, and continuously recording exposure energy in the illumination rising process until the illumination does not rise any more; when recording exposure data, illuminance was recorded every 10 energy units.
Step five: and calculating the reference exposure energy of the photosensitive resist. There are two ways to calculate the reference exposure energy of the photoresist, namely, using the data of the reference exposure energy to calculate and using the data of the reference exposure time to calculate. When the reference exposure energy is adopted for calculation, the reference exposure energy is equal to the set energy minus the energy left before the exposure is stopped, and then multiplied by eighty percent; when the reference exposure time is adopted for calculation, the reference exposure time is equal to the set time minus the time left before the exposure is stopped, and then multiplied by eighty percent.
The specific detection process comprises the following steps: first, an exposure machine for exposure test and an energy meter for measuring the illuminance of an exposure screen, the type of which is UV-M03A, but not limited to this type of energy meter, and a probe UV-SD42 adapted to the wavelength of the photosensitive resist and the exposure machine, but not limited to this probe, are selected. Then after the glass plane of the exposure machine is cleaned up, the exposure screen coated with the novel photosensitive offset plate film is placed in the center of the exposure machine.
After the selected placement of the instrument is finished, pressing a power switch of the energy meter, calling out a unit of illuminance displayed by an electronic display of the energy meter, and then placing the probe in a region with photosensitive resist of the screen to be exposed; and starting an exposure power supply of the exposure machine, and setting the current exposure energy of the exposure machine to be the maximum exposure energy generally. And finally, covering a gland of the exposure machine, and starting the exposure machine to expose the screen printing plate.
The electronic display screen on the energy meter starts to measure the actual value of the illumination intensity in a certain time period in the exposure process of the novel photosensitive resist, and the actual value can slowly rise. The measuring personnel records the illuminance value of each 10 units of energy and continuously records the illuminance value. When the value of the illuminance displayed by the energy meter is not changed within 10 units of energy, the exposure machine is immediately closed, and the exposure screen is stopped. At the moment, subtracting the residual exposure energy recorded at the moment from the originally set exposure energy on the display of the exposure machine is the standard exposure energy of the test photosensitive resist under the current screen printing plate condition; if the set time is the time, the original set exposure time on the exposure machine minus the residual exposure time recorded at the time is the reference exposure time of the test photosensitive resist under the current screen printing condition. In general, the exposure reference energy can achieve the ideal resolution effect when the photosensitive resist is exposed to 80%, and finally, the photosensitive resist is completely cured by secondary solarization with 2 times of the exposure energy. Therefore, the reference exposure energy actually used is equal to 80% of the reference exposure energy.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (3)
1. The technological method for rapidly measuring and calculating the reference exposure energy of the photosensitive resist is characterized by comprising the following steps of: the method comprises the following steps:
the method comprises the following steps: coating a photosensitive resist, and uniformly coating the photosensitive resist on the exposure screen;
step two: selecting an exposure machine and an energy meter and setting exposure parameters;
step three: placing the exposure screen plate into an exposure machine to start exposure;
step four: simultaneously recording illumination data in the exposure process, and continuously recording exposure energy in the illumination rising process until the illumination does not rise any more;
step five: calculating the reference exposure energy of the photosensitive resist;
setting the exposure energy of the exposure machine first when the second step is carried out, and setting the exposure machine as the maximum exposure energy;
the method for calculating the standard exposure energy of the photosensitive resist in the step five comprises the following steps: the baseline exposure energy is equal to the set energy minus the energy left before stopping exposure, multiplied by eighty percent.
2. The process for rapidly calculating the exposure energy of a photoresist standard according to claim 1, wherein: in the first step, before coating the photosensitive resist, the thickness of the corresponding photosensitive resist exposure plate and the color and thickness of the exposure gauze need to be selected.
3. The process for rapidly calculating the exposure energy of a photoresist standard according to claim 1, wherein: when the exposure data is recorded in the fourth step, the illuminance is recorded every 10 energy units.
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| CN202010163548.3A CN111198481B (en) | 2020-03-10 | 2020-03-10 | Process method for rapidly measuring and calculating reference exposure energy of photosensitive resist |
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| CN202010163548.3A CN111198481B (en) | 2020-03-10 | 2020-03-10 | Process method for rapidly measuring and calculating reference exposure energy of photosensitive resist |
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| CN111198481B true CN111198481B (en) | 2023-03-31 |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0945604A (en) * | 1995-07-28 | 1997-02-14 | Nec Corp | Exposure method and aligner |
| DE69921383T2 (en) * | 1998-03-30 | 2005-10-27 | Infineon Technologies Ag | Control of critical dimensions |
| US7626182B2 (en) * | 2006-09-05 | 2009-12-01 | Asml Netherlands B.V. | Radiation pulse energy control system, lithographic apparatus and device manufacturing method |
| CN101825846A (en) * | 2009-03-02 | 2010-09-08 | 和舰科技(苏州)有限公司 | Method for detecting positive photoresistance exposure threshold energy |
| CN102566288B (en) * | 2010-12-21 | 2013-11-27 | 无锡华润上华半导体有限公司 | Exposure method and system |
| KR102180027B1 (en) * | 2014-09-19 | 2020-11-17 | 삼성전자 주식회사 | Metrology method for lithography process and method of monitoring lithography process using the metrology method |
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