CN111192874A - GaN power device with composite structure - Google Patents
GaN power device with composite structure Download PDFInfo
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- CN111192874A CN111192874A CN202010030167.8A CN202010030167A CN111192874A CN 111192874 A CN111192874 A CN 111192874A CN 202010030167 A CN202010030167 A CN 202010030167A CN 111192874 A CN111192874 A CN 111192874A
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- 239000002131 composite material Substances 0.000 title claims abstract description 16
- 230000005669 field effect Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 110
- 229910002704 AlGaN Inorganic materials 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 45
- 238000002161 passivation Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 9
- 230000006911 nucleation Effects 0.000 claims description 7
- 238000010899 nucleation Methods 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a GaN power device with a composite structure, which comprises a GaN field effect transistor (GaN FET) and a GaN Schottky diode (GaN SBD), wherein the GaN SBD is positioned between a grid electrode and a source electrode of the GaN FET; the anode of the GaN SBD is electrically connected to the source of the GaN FET, and the cathode of the GaN SBD is electrically connected to the gate of the GaN FET. The invention can effectively avoid the failure of the device caused by instantaneous surge voltage in the application process of the device and improve the reliability of the device.
Description
Technical Field
The invention belongs to the technical field of power semiconductor devices, and particularly relates to a high-reliability GaN power device with a composite structure.
Background
The semiconductor power device is a core element of a power electronic system, and the emergence of each new generation of power electronic devices is accompanied with a revolution of technical innovation. At present, the MOSFET made of Si material plays a great role in the application of semiconductor power devices and occupies the leading position of the market. However, due to the limitation of Si materials, although the performance of Si material MOSFETs is continuously improved through various processes, materials and design optimization, the improvement is far behind the development speed of power electronic technology, Si material power semiconductor devices have been unable to meet the requirements of rapidly developed power systems on high frequency, low power consumption, high power capacity and the like, and new generation wide bandgap power semiconductor materials and devices represented by GaN are gradually developed to meet the requirements of new generation power systems.
At present, a conventional GaN power device is of a planar transverse structure, the device is mainly divided into two main types of depletion mode (D-mode) and enhancement mode (E-mode), the research of the two types of depletion mode (D-mode) and enhancement mode (E-mode) is in a starting stage, the design structure and the technical route are various, and the main design structure comprises: a trench gate (access gate) design structure, a p-GaN gate design structure, a gate Injection transistor (git) design structure of the japan patent proprietary to Panasonic, and an island technology design structure of the canadian GaN Systems patent proprietary. However, the intrinsic stress caused by the conventional GaN power device material structure, the interface state density of the MIS gate structure is high, and the stability of the passivation layer grown on the surface of the AlGaN barrier layer is poor, so that the gate reliability of the device is poor. Therefore, on one hand, the intrinsic stress of the material is reduced, the process level of the device is improved, on the other hand, the design structure of the device is optimized, the protection of the grid electrode of the device is enhanced, and the method is an important method for improving the reliability of the GaN power device.
Disclosure of Invention
The invention mainly aims to provide a GaN power device with a composite structure, which can effectively improve the reliability of the device.
In order to achieve the purpose, the invention adopts a technical scheme that: provided is a GaN power device of a composite structure, including: a substrate; an AlN nucleation layer formed on the substrate; a GaN buffer layer formed on the AlN nucleation layer; a GaN channel layer formed on the GaN buffer layer; an AlGaN barrier layer formed on the GaN channel layer; the passivation layer is formed on the AlGaN barrier layer, and the bottom end of the passivation layer is at least partially embedded into the GaN channel layer; the drain electrode is formed on the AlGaN barrier layer of the drain electrode region, and the bottom end of the drain electrode is embedded into the AlGaN barrier layer; the source electrode is formed on the AlGaN barrier layer of the source electrode region, and the bottom end of the source electrode is embedded into the AlGaN barrier layer; a gate formed on the passivation layer over the AlGaN barrier layer; the cathode is formed on the AlGaN barrier layer of the cathode region, and the bottom end of the cathode is embedded into the AlGaN barrier layer; an anode formed on the AlGaN barrier layer; a gate lead-out metal formed on the gate; a first common wiring layer extending from the source electrode to the anode electrode, wherein the source electrode and the anode electrode are electrically connected to each other via the first common wiring layer; a first interlayer insulating film formed on the passivation layer between the source electrode and the anode electrode; a second common wiring layer extending from the gate electrode to the cathode electrode, wherein the gate electrode and the cathode electrode are electrically connected to each other via the second common wiring layer; a second layer insulating film formed on the passivation layer and the first common wiring layer.
Preferably, the substrate is made of Si, SiC, GaN or Al2O3。
Preferably, the source, drain and cathode and the AlGaN barrier layer form an alloy ohmic contact.
Preferably, the anode forms a schottky contact with the AlGaN barrier layer.
Preferably, the material adopted by the passivation layer is Si3N4、HfO2Or Al2O3。
Preferably, the cathode forms a GaN schottky diode (GaNSBD) with the anode and the AlGaN barrier layer.
Preferably, the drain, the gate and the source and the AlGaN barrier layer form a GaN field effect transistor (GaN FET).
The GaN SBD integrated in parallel connection between the grid electrode and the source electrode of the GaN power device with the composite structure can effectively clamp the voltage between the grid electrode and the source electrode, control the voltage between the grid electrode and the source electrode and improve the reliability of the device.
Drawings
FIG. 1 is a schematic diagram of a composite structure GaN power device according to an embodiment of the invention;
fig. 2 is an equivalent circuit diagram of the device disclosed by the invention.
Detailed Description
The technical solution of the present invention is described in detail below with reference to the accompanying drawings and specific embodiments.
A GaN power device with a composite structure according to an embodiment of the present invention, as shown in fig. 1, includes a substrate 1, an AlN nucleation layer 2, a GaN buffer layer 3, a GaN channel layer 4, an AlGaN barrier layer 5, a passivation layer 6, a cathode 7, a drain 8, a source 9, an anode 10, a gate 11, a first interlayer insulating film 12, a first common wiring layer 13, a second layer insulating film 14, a drain extraction metal 15, and a second common wiring layer 16.
Wherein an AlN nucleation layer 2 is formed on a substrate 1. A GaN buffer layer 3 is formed on the AlN nucleation layer 2. The GaN channel layer 4 is formed on the GaN buffer layer 3. The AlGaN barrier layer 5 is formed on the GaN channel layer 4. A passivation layer 6 is formed on the AlGaN barrier layer 5, and a bottom end of the passivation layer 6 is at least partially embedded inside the GaN channel layer 4. The drain 8 is formed on the AlGaN barrier layer 5 in the drain region, and the bottom end of the drain 8 is embedded inside the AlGaN barrier layer 5. The source 9 is formed on the AlGaN barrier layer 5 in the source region, and the bottom end of the source 9 is embedded inside the AlGaN barrier layer 5. A gate 11 is formed on the passivation layer 6 above the AlGaN barrier layer 5. The cathode 7 is formed on the AlGaN barrier layer 5 in the cathode region, and the bottom end of the cathode 7 is embedded inside the AlGaN barrier layer 5. The anode 10 is formed on the AlGaN barrier layer 5. A drain lead metal 15 is formed on the gate electrode 11. The first common wiring layer 13 extends from the source 9 to the anode 10, wherein the source 9 and the anode 10 are electrically connected to each other via the first common wiring layer 13. A first interlayer insulating film 12 is formed on the passivation layer 6 between the source electrode 9 and the anode electrode 10. The second common wiring layer 16 extends from the gate electrode 11 to the cathode electrode 7, wherein the gate electrode 11 and the cathode electrode 7 are electrically connected to each other via the second common wiring layer 16. A second-layer insulating film 14 is formed on the passivation layer 6 and the first common wiring layer 13.
In the present embodiment, the material used for the substrate 1 is Si, SiC, GaN or Al2O3. The source electrode 9 and the drain electrode 8 form alloy ohmic contacts with the cathode 7 and the AlGaN barrier layer 5. The anode 10 forms a schottky contact with the AlGaN barrier layer 5. The passivation layer 6 is made of Si3N4、HfO2Or Al2O3. The cathode 7 forms a GaN schottky diode (GaNSBD) with the anode 10 and the AlGaN barrier layer 5. The drain 8, gate 11 and source 9 and AlGaN barrier layer 5 form a GaN field effect transistor (GaN FET).
The AlGaN barrier layer 5 and the GaN channel layer 4 form an AlGaN/GaN heterojunction, and two-dimensional electron gas (2 DEG) is generated at an interface of the heterojunction, and the 2DEG is a conductive carrier, as shown by a dotted line in fig. 1.
As can be seen from fig. 1, a groove is formed between the source 9 and the anode 10, electrically isolating the GaN SBD and the GaN FET from each other.
The GaNSBD integrated in parallel connection between the grid electrode and the source electrode of the GaN power device with the composite structure can effectively clamp the voltage between the grid electrode and the source electrode, control the voltage between the grid electrode and the source electrode, and improve the reliability of the device.
While the invention has been described in detail with respect to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (7)
1. A GaN power device of composite structure, comprising:
a substrate;
an AlN nucleation layer formed on the substrate;
a GaN buffer layer formed on the AlN nucleation layer;
a GaN channel layer formed on the GaN buffer layer;
an AlGaN barrier layer formed on the GaN channel layer;
the passivation layer is formed on the AlGaN barrier layer, and the bottom end of the passivation layer is at least partially embedded into the GaN channel layer;
the drain electrode is formed on the AlGaN barrier layer of the drain electrode region, and the bottom end of the drain electrode is embedded into the AlGaN barrier layer;
the source electrode is formed on the AlGaN barrier layer of the source electrode region, and the bottom end of the source electrode is embedded into the AlGaN barrier layer;
a gate formed on the passivation layer over the AlGaN barrier layer;
the cathode is formed on the AlGaN barrier layer of the cathode region, and the bottom end of the cathode is embedded into the AlGaN barrier layer;
an anode formed on the AlGaN barrier layer;
a drain lead-out metal formed on the gate electrode;
a first common wiring layer extending from the source electrode to the anode electrode, wherein the source electrode and the anode electrode are electrically connected to each other via the first common wiring layer;
a first interlayer insulating film formed on the passivation layer between the source electrode and the anode electrode;
a second common wiring layer extending from the gate electrode to the cathode electrode, wherein the gate electrode and the cathode electrode are electrically connected to each other via the second common wiring layer;
a second layer insulating film formed on the passivation layer and the first common wiring layer.
2. The GaN power device with composite structure as claimed in claim 1, wherein the substrate is made of Si, SiC, GaN or Al2O3。
3. The composite structure GaN power device of claim 1 wherein the source, drain and cathode and the AlGaN barrier form an alloy ohmic contact.
4. The composite structure GaN power device of claim 1 wherein said anode forms a schottky contact with said AlGaN barrier layer.
5. The GaN power device with composite structure as claimed in claim 1, wherein the passivation layer is made of Si3N4、HfO2Or Al2O3。
6. The GaN power device with composite structure of claim 1-5, wherein the cathode forms a GaN Schottky diode (GaN SBD) with the anode and the AlGaN barrier layer.
7. The GaN power device of claim 1-5, wherein the drain, the gate and the source and the AlGaN barrier layer form a GaN field effect transistor (GaN FET).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010030167.8A CN111192874A (en) | 2020-01-13 | 2020-01-13 | GaN power device with composite structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010030167.8A CN111192874A (en) | 2020-01-13 | 2020-01-13 | GaN power device with composite structure |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001332567A (en) * | 2000-05-22 | 2001-11-30 | Sony Corp | Protective circuit for field effect transistor |
| WO2011013500A1 (en) * | 2009-07-30 | 2011-02-03 | 住友電気工業株式会社 | Semiconductor device and method for manufacturing same |
| CN104241282A (en) * | 2013-06-20 | 2014-12-24 | 德州仪器公司 | Bi-directional gallium nitride switch and forming method thereof |
| CN208189596U (en) * | 2017-02-21 | 2018-12-04 | 半导体元件工业有限责任公司 | High electron mobility diode and semiconductor devices |
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2020
- 2020-01-13 CN CN202010030167.8A patent/CN111192874A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001332567A (en) * | 2000-05-22 | 2001-11-30 | Sony Corp | Protective circuit for field effect transistor |
| WO2011013500A1 (en) * | 2009-07-30 | 2011-02-03 | 住友電気工業株式会社 | Semiconductor device and method for manufacturing same |
| CN104241282A (en) * | 2013-06-20 | 2014-12-24 | 德州仪器公司 | Bi-directional gallium nitride switch and forming method thereof |
| CN208189596U (en) * | 2017-02-21 | 2018-12-04 | 半导体元件工业有限责任公司 | High electron mobility diode and semiconductor devices |
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Application publication date: 20200522 |