CN111106027A - Measurement modification system for SOI top silicon wafer - Google Patents

Measurement modification system for SOI top silicon wafer Download PDF

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Publication number
CN111106027A
CN111106027A CN201911333672.3A CN201911333672A CN111106027A CN 111106027 A CN111106027 A CN 111106027A CN 201911333672 A CN201911333672 A CN 201911333672A CN 111106027 A CN111106027 A CN 111106027A
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silicon wafer
top silicon
soi top
soi
laser
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刘胜
陈文�
吴国强
孙成亮
东芳
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Wuhan University WHU
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Wuhan University WHU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/08—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/2055—Analysing diffraction patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • G01N2223/0566—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction analysing diffraction pattern
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
    • G01N2223/1016—X-ray
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/633—Specific applications or type of materials thickness, density, surface weight (unit area)

Abstract

The invention provides a measurement modification system for an SOI top silicon wafer. The invention integrates an XRD detection system and a laser direct writing technology, and provides a system capable of simultaneously detecting the surface roughness of the SOI top silicon wafer and modifying the surface roughness of the SOI top silicon wafer. The X-ray is transmitted to the surface of the SOI top silicon wafer through an XRD emission source, the signal transmitted from the surface of the silicon wafer is received by an XRD receiver, the surface roughness of the SOI top silicon wafer is obtained through analysis, then the region with the surface roughness not meeting the requirement of the SOI top silicon wafer is modified through a laser direct writing device, and the surface roughness of the SOI top silicon wafer is modified through a closed-loop control system until the surface roughness meets the requirement.

Description

Measurement modification system for SOI top silicon wafer
Technical Field
The invention relates to the technical field of SOI top silicon wafer detection, in particular to a measurement modification system of an SOI top silicon wafer.
Background
Silicon On insulator (soi), which is called silicon On insulator in chinese, is a new semiconductor silicon material in which a layer of silicon dioxide is buried in a single crystal silicon, wherein the silicon dioxide layer plays an insulating role to realize electrical isolation between a device active layer and a substrate. SOI materials can eliminate parasitic latch-up in bulk silicon CMOS circuits, while chips made from SOI materials have many advantages: such as very low energy consumption, very strong radiation resistance, very strong high temperature resistance, small error and the like, the advantages enable the SOI material to be very widely applied to most silicon-based integrated circuits.
SOI silicon chips are also widely used in the field of Micro-electro-mechanical Systems (MEMS). The top silicon of the SOI silicon chip is of a single crystal structure and can be used as a movable device structure, the oxygen buried layer in the SOI silicon chip can be used as a termination layer for silicon chip corrosion of the device layer, the thickness of the device layer can be accurately controlled, and the performance and the parameter stability of the device are ensured. Compared with a bulk silicon wafer, the SOI silicon wafer has certain advantages, a device manufactured by the SOI silicon wafer is lower in power consumption, parasitic capacitance is smaller, electric leakage is less, static power consumption is lower, and the middle oxygen buried layer can effectively electrically isolate a device layer from a substrate silicon wafer. Due to the existence of the silicon dioxide of the insulating layer, the device manufactured on the SOI top silicon wafer has certain advantages compared with the device manufactured on the bulk silicon. When manufacturing an MEMS device, the SOI top silicon wafer is used as a device layer, and in order to ensure the performance of the device, the surface roughness of the SOI top silicon wafer is inevitably required to be accurate in the processing process, so that the detection and modification of the surface roughness of the SOI top silicon wafer are very important. ,
XRD (X-ray diffraction) is also known as X-ray diffraction technique. By performing X-ray diffraction on a material and analyzing the diffraction pattern, information such as the composition of the material, the structure or form of atoms or molecules inside the material, and the like can be obtained. XRD is the primary method for studying the phase and crystal structure of a substance. When a certain substance is subjected to X-ray diffraction analysis, the substance is irradiated by X-rays to generate diffraction phenomena of different degrees, and the composition, the crystal form, other parameters and the like of the substance determine a specific diffraction pattern of the substance. The XRD technology has the advantages of no damage to polluted samples, quick and convenient use, high measurement precision and the like. Similarly, the thickness and the surface roughness of the material can be detected by using an XRD technology, and the surface roughness and the thickness of the material can be detected in real time by enabling X-rays to be incident on the surface of the material at a fixed angle larger than the total reflection angle.
In the process of detecting the surface roughness of the SOI top silicon wafer by using the XRD technology, when the detection finds that the surface roughness of the SOI top silicon wafer does not meet the precision requirement, the region with the unqualified roughness can be modified by using the laser direct writing technology, and the surface roughness of the SOI top silicon wafer is adjusted. When ultrashort pulse laser is focused on the surface of a solid material, the material can be directly removed or ablated, the material at the laser focus position can be locally modified after being irradiated by the laser, and the modification of the area on the surface of the sample can be completed by enabling the sample to be shifted relative to the laser focus. Therefore, the surface roughness of the SOI top silicon wafer can be adjusted and the surface area of the SOI top silicon wafer can be modified by the laser direct writing technology.
Disclosure of Invention
The invention integrates an XRD detection system and a laser direct writing technology, and provides a system which can simultaneously detect the thickness and the surface roughness of the SOI top silicon wafer and modify and adjust the thickness and the surface roughness of the silicon wafer.
The technical scheme of the system is a measurement modification system of an SOI top silicon chip, which is characterized by comprising the following steps: the device comprises a control terminal, an XRD device, a laser generator, a laser angle regulator, a reflector, a focusing prism and an SOI top silicon wafer;
the control terminal is respectively connected with the XRD device and the laser generator; the XRD device is connected with the SOI top layer silicon chip through a light path; the laser generator, the laser angle regulator, the reflector, the focusing prism and the SOI top silicon wafer are sequentially connected through a light path.
The technical scheme of the method is an on-line measurement modification method of an SOI top silicon wafer, which is characterized by comprising the following steps of:
step 1: dividing an SOI top silicon wafer into a plurality of regions, wherein each region is marked by a coordinate point;
step 2: the control terminal transmits X-rays to enter the SOI top silicon wafer dividing region at an angle larger than the fixed angle of total reflection through controlling the XRD device, receives X-ray reflection signals, and obtains the surface roughness of the SOI top silicon wafer dividing region through analyzing a diffraction pattern;
and step 3: the control terminal judges according to the surface roughness and the roughness threshold of the dividing region of the SOI top silicon wafer so as to control the laser generator to modify the dividing region of the SOI top silicon wafer;
preferably, each of the regions in step 1 is marked by coordinate points as:
marking the ith area as (x)i,yi)i∈[1,N]N represents that the number of SOI top silicon chip areas is N;
preferably, the dividing region of the SOI top silicon wafer in the step 2 is the ith region, and is specifically marked as (x)i,yi)i∈[1,N]N represents that the number of SOI top silicon chip areas is N;
in the step 2, the surface roughness of the dividing region of the SOI top silicon wafer obtained by analysis is as follows:
the control terminal obtains the surface roughness of the ith area by analyzing the change of the reflectivity of the X-ray, and the surface roughness of the ith area is ki,i∈[1,N]N represents that the number of SOI top silicon chip areas is N;
preferably, in step 3, the determination is made according to the surface roughness and the roughness threshold of the dividing region of the SOI top-level silicon wafer:
if k isiα, the roughness does not meet the precision requirement;
wherein i belongs to [1, N ], N represents that the number of SOI top silicon wafer regions is N, and α represents that the roughness threshold value is 0.002 mu m;
if k isiα is less than or equal to the roughness, which indicates that the roughness meets the precision requirement;
when the roughness does not meet the precision requirement, the step 3 of controlling the laser generator to modify the SOI top silicon wafer dividing region specifically comprises the following steps:
laser emitted by a laser emitter passes through a laser angle regulator connected with a light path of the laser emitter and then enters a reflecting mirror surface at a proper angle, and the incident laser is reflected by the reflecting mirror surface and then is focused on the surface of the silicon chip dividing region on the top layer of the SOI through a focusing prism;
the surface roughness of the I-th area divided by the SOI top silicon wafer is ki,i∈[1,N]N represents that the number of SOI top silicon chip areas is N;
the laser emitted by the laser emitter can be continuous laser or pulse laser;
when laser emitted by the laser emitter is focused on the surface of the divided region of the SOI top silicon wafer, the material of the focused region can be directly removed or ablated, so that the surface of the divided region of the SOI top silicon wafer can be modified;
and when the roughness of the ith area meets the precision requirement, the control terminal controls the laser generator to stop working, and then controls the XRD device to perform online measurement of the i +1 area of the next area.
The method has the advantages that the surface roughness of the SOI upper silicon wafer can be checked in real time, and then the laser direct writing is controlled to modify the surface roughness of the SOI upper silicon wafer by feeding back signals to the control terminal through the XRD device, so that the surface roughness of the upper silicon wafer can be accurately controlled.
Drawings
FIG. 1: the structure of the system is schematically shown.
The system comprises a laser emitter 1, a laser angle regulator 2, a reflector 3, a focusing prism 4, an SOI top silicon wafer 5, an XRD emission source 6, an XRD receiver 7 and a control terminal 8.
Detailed Description
In order to more clearly illustrate the present invention and/or the technical solutions in the prior art, the following will describe embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
Referring to fig. 1, a schematic structural diagram of a system for detecting surface roughness and modifying surface of a SOI top-layer silicon wafer in this embodiment is shown, where the system mainly includes an XRD detection subsystem and a laser direct writing subsystem; the basic structure of the system comprises: 1 is a laser emitter, 2 is a laser angle adjuster, 3 is a reflector, 4 is a focusing prism, 5 is an SOI top silicon wafer, 6 is an XRD emission source, 7 is an XRD receiver, 8 is a control terminal, etc., but not limited thereto.
Furthermore, the system has a detection function, and the surface roughness of the SOI top silicon wafer is detected in real time by using the XRD device and the laser direct writing device in the surface roughness detection and surface modification processes of the SOI top silicon wafer so as to judge whether the surface roughness of the SOI top silicon wafer meets the requirements or not.
Further, in this embodiment, the X-ray emitted from the XRD emission source 6 is incident at the total reflection angle relative to the surface of the SOI top silicon wafer 5, so as to obtain the strongest diffraction signal, but not limited to this angle, and reflect the surface roughness of the silicon wafer through the received reflection information.
In the embodiment, the XRD emission source 6 emits X-rays on the surface of the SOI top silicon wafer, and the XRD receiver 7 receives signals reflected from the surface of the SOI top silicon wafer and analyzes and processes the signals, so that the roughness information of the surface of the SOI top silicon wafer can be obtained by analyzing the reflected signals. After the surface roughness information of the SOI top silicon wafer is obtained, the information is fed back to the control terminal 8, and the area with the surface roughness not meeting the requirement is modified and adjusted through the laser direct writing device by the control terminal. The laser direct writing device in the embodiment can emit single-beam laser, the laser is femtosecond laser, the frequency of the laser is 20MHZ, the power of the laser is 10mW, the wavelength of the laser is 1030nm, the pulse width of the laser is 300fs, a light spot of a laser beam is a circular light spot distributed by a spatial flat top, and the size of the light spot is 1 um. After laser is emitted, the angle of the emitted laser is adjusted through a laser angle adjuster, the laser is focused on the surface of the SOI top silicon wafer after the path is changed through reflection of a reflecting mirror and is focused through a focusing prism, and then the surface of a focusing area can be modified through the laser. After the surface roughness of the silicon wafer is modified through laser direct writing, the surface roughness of the silicon wafer is detected through an XRD device, if the surface roughness of the SOI top-layer silicon wafer does not meet the requirement, the surface roughness is fed back to a control terminal, the surface roughness of the SOI top-layer silicon wafer is modified through controlling the laser direct writing device again, and the operation is repeated until the surface roughness of a focusing area meets the requirement, so that the SOI top-layer silicon wafer with the surface roughness meeting the precision requirement can be obtained.
The embodiment of the invention is described in conjunction with fig. 1, which is an on-line measurement modification method for SOI top-layer silicon wafer, and is characterized by comprising the following steps:
step 1: dividing an SOI top silicon wafer into a plurality of regions, wherein each region is marked by a coordinate point;
in step 1, each region is marked as:
marking the ith area as (x)i,yi)i∈[1,50000]50000 represents the number of SOI top silicon wafer regions as N;
step 2: the control terminal transmits X-rays to enter the SOI top silicon wafer dividing region at a fixed angle larger than the total reflection angle by controlling the XRD device, receives X-ray reflection signals, and obtains the surface roughness of the SOI top silicon wafer dividing region by analyzing the change of the reflectivity;
in the step 2, the dividing region of the SOI top silicon wafer is the ith region, and the specific mark is (x)i,yi)i∈[1,50000]50000 denotes the number of SOI top silicon wafer regions of 50000;
in the step 2, the surface roughness of the dividing region of the SOI top silicon wafer obtained by analysis is as follows:
the control terminal obtains the surface roughness of the ith area by analyzing the change of the reflectivity of the X-ray, and the surface roughness of the ith area is ki,i∈[1,50000]50000 denotes the number of SOI top silicon wafer regions of 50000;
and step 3: the control terminal judges according to the surface roughness and the roughness threshold of the dividing region of the SOI top silicon wafer so as to control the laser generator to modify the dividing region of the SOI top silicon wafer;
in step 3, the judgment is made according to the surface roughness and the roughness threshold of the dividing region of the SOI top silicon wafer:
if k isiRa0.025, which indicates that the roughness does not meet the precision requirement;
wherein i belongs to [1,50000],50000 represents that the number of SOI top silicon wafer regions is 50000, and Ra0.025 represents a roughness threshold;
if k isiRa0.025 or less, which indicates that the roughness meets the precision requirement;
when the roughness does not meet the precision requirement, the step 3 of controlling the laser generator to modify the SOI top silicon wafer dividing region specifically comprises the following steps:
laser emitted by a laser emitter passes through a laser angle regulator connected with a light path of the laser emitter and then enters a reflecting mirror surface at a proper angle, and the incident laser is reflected by the reflecting mirror surface and then is focused on the surface of the silicon chip dividing region on the top layer of the SOI through a focusing prism;
the surface roughness of the I-th area divided by the SOI top silicon wafer is ki,i∈[1,50000]50000 denotes the number of SOI top silicon wafer regions of 50000;
the laser emitted by the laser emitter can be continuous laser or pulse laser;
when laser emitted by the laser emitter is focused on the surface of the divided region of the SOI top silicon wafer, the material of the focused region can be directly removed or ablated, so that the surface of the divided region of the SOI top silicon wafer can be modified;
and when the roughness of the ith area meets the precision requirement, the control terminal controls the laser generator to stop working, and then controls the XRD device to perform online measurement of the i +1 area of the next area.
It should be understood that parts of the specification not set forth in detail are well within the prior art.
It should be understood that the above description of the preferred embodiments is given for clarity and not for any purpose of limitation, and that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (4)

1. A measurement modification system of SOI top silicon wafer is characterized in that:
the measurement and modification system of the SOI top silicon wafer is applied to a measurement and modification device of the SOI top silicon wafer, and the measurement and modification device of the SOI top silicon wafer comprises: the device comprises a control terminal, an XRD device, a laser generator, a laser angle regulator, a reflector, a focusing prism and an SOI top silicon wafer; the control terminal is respectively connected with the XRD device and the laser generator; the XRD device is connected with the SOI top layer silicon chip through a light path; the laser generator, the laser angle regulator, the reflector, the focusing prism and the SOI top silicon wafer are sequentially connected through a light path;
the measurement modification system of the SOI top silicon wafer comprises the following steps:
step 1: dividing an SOI top silicon wafer into a plurality of regions, wherein each region is marked by a coordinate point;
step 2: the control terminal transmits X-rays to enter the SOI top silicon wafer dividing region at an angle larger than the fixed angle of total reflection through controlling the XRD device, receives X-ray reflection signals, and obtains the surface roughness of the SOI top silicon wafer dividing region through analyzing a diffraction pattern;
and step 3: and the control terminal judges according to the surface roughness and the roughness threshold of the dividing region of the SOI top silicon wafer so as to control the laser generator to modify the dividing region of the SOI top silicon wafer.
2. The system for measurement and modification of SOI top-level silicon wafer according to claim 1, wherein:
in step 1, each region is marked as:
marking the ith area as (x)i,yi)i∈[1,N]And N represents that the number of SOI top silicon wafer areas is N.
3. The system for measurement and modification of SOI top-level silicon wafer according to claim 1, wherein:
in the step 2, the dividing region of the SOI top silicon wafer is the ith region, and the specific mark is (x)i,yi)i∈[1,N]N represents that the number of SOI top silicon chip areas is N;
in the step 2, the surface roughness of the dividing region of the SOI top silicon wafer obtained by analysis is as follows:
the control terminal obtains the surface roughness of the ith area by analyzing the change of the reflectivity of the X-ray, and the surface roughness of the ith area is ki,i∈[1,N]And N represents that the number of SOI top silicon wafer areas is N.
4. The system for measurement and modification of SOI top-level silicon wafer according to claim 1, wherein:
in step 3, the judgment is made according to the surface roughness and the roughness threshold of the dividing region of the SOI top silicon wafer:
if k isiα, the roughness does not meet the precision requirement;
wherein i belongs to [1, N ], N represents that the number of SOI top silicon wafer regions is N, and α represents that the roughness threshold value is 0.002 mu m;
if k isiα is less than or equal to the roughness, which indicates that the roughness meets the precision requirement;
when the roughness does not meet the precision requirement, the step 3 of controlling the laser generator to modify the SOI top silicon wafer dividing region specifically comprises the following steps:
laser emitted by a laser emitter passes through a laser angle regulator connected with a light path of the laser emitter and then enters a reflecting mirror surface at a proper angle, and the incident laser is reflected by the reflecting mirror surface and then is focused on the surface of the silicon chip dividing region on the top layer of the SOI through a focusing prism;
the surface roughness of the I-th area divided by the SOI top silicon wafer is ki,i∈[1,N]N represents that the number of SOI top silicon chip areas is N;
the laser emitted by the laser emitter can be continuous laser or pulse laser;
when laser emitted by the laser emitter is focused on the surface of the divided region of the SOI top silicon wafer, the material of the focused region can be directly removed or ablated, so that the surface of the divided region of the SOI top silicon wafer can be modified;
and when the roughness of the ith area meets the precision requirement, the control terminal controls the laser generator to stop working, and then controls the XRD device to perform online measurement of the i +1 area of the next area.
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