CN111088526B - Multi-piece loaded silicon carbide epitaxial growth equipment - Google Patents
Multi-piece loaded silicon carbide epitaxial growth equipment Download PDFInfo
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- CN111088526B CN111088526B CN201911379938.8A CN201911379938A CN111088526B CN 111088526 B CN111088526 B CN 111088526B CN 201911379938 A CN201911379938 A CN 201911379938A CN 111088526 B CN111088526 B CN 111088526B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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Abstract
The invention provides multi-piece loaded silicon carbide epitaxial growth equipment which comprises a base, a reaction chamber arranged on the base, an air inlet mechanism arranged on the left side of the reaction chamber, an air outlet mechanism arranged on the right side of the reaction chamber, a heating coil arranged at the bottom of the reaction chamber, a tray frame rotatably arranged in the middle of the reaction chamber, and a driving mechanism used for driving the tray frame to rotate; the tray frame comprises a vertical rotary rod and a plurality of graphite trays which are horizontally connected with the rotary rod in series; and a plurality of positioning grooves for placing the substrate are uniformly arranged on the upper surface of each graphite tray. The silicon carbide epitaxial growth equipment can produce a plurality of epitaxial wafers at one time, and is compact in structure, energy-saving and environment-friendly.
Description
Technical Field
The invention relates to the technical field of silicon carbide epitaxial growth, in particular to a multi-piece loaded silicon carbide epitaxial growth device.
Background
The silicon carbide epitaxial growth refers to that a single crystal layer which has certain requirements and is the same as the substrate crystal orientation is grown on a silicon carbide substrate as if the original crystal extends outwards by a section. There are various methods for growing epitaxial layers, among which the most common is a vapor phase epitaxy process, in which a substrate is placed in a reaction chamber and heated, and a silicon-containing reaction gas is introduced to perform a high temperature reaction, so that the silicon-containing reaction gas is reduced or thermally decomposed, and the generated silicon atoms are epitaxially grown on the surface of the substrate silicon.
The existing silicon carbide epitaxial growth equipment can only produce one epitaxial wafer at a time, and the production efficiency is not high. There are some silicon carbide epitaxial growth equipments, though can once produce a plurality of epitaxial wafers, it is a disc structure, with the multichip substrate tiling on a big disc, can only improve production quantity through the diameter of increase disc, make growth chamber volume very huge like this, can lead to gas utilization ratio very low moreover, and heating efficiency is not high, need consume a large amount of electric energy and growth gas.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a multi-piece loaded silicon carbide epitaxial growth device which can produce a plurality of epitaxial pieces at one time, and has the advantages of compact structure, energy conservation and environmental protection.
In order to achieve the purpose, the invention adopts the following technical scheme:
a multi-piece loaded silicon carbide epitaxial growth device comprises a base, a reaction chamber arranged on the base, an air inlet mechanism arranged on the left side of the reaction chamber, an air outlet mechanism arranged on the right side of the reaction chamber, a heating coil arranged at the bottom of the reaction chamber, a tray frame rotatably arranged in the middle of the reaction chamber, and a driving mechanism used for driving the tray frame to rotate;
the tray frame comprises a vertical rotary rod and a plurality of graphite trays which are horizontally connected with the rotary rod in series; and a plurality of positioning grooves for placing the substrate are uniformly arranged on the upper surface of each graphite tray.
In the multi-piece loaded silicon carbide epitaxial growth equipment, a plurality of groups of jacks are arranged on the rotating rod from top to bottom, and each group of jacks comprises at least two jacks uniformly distributed along the circumferential direction; graphite tray slides and wears to establish on the rotary rod, and presses on a set of bolt, and this set of bolt includes a plurality of detachably pegs graft the bolt on a set of jack, and graphite tray's bottom is provided with the spacing groove that supplies the bolt to stretch into.
In the multi-piece loaded silicon carbide epitaxial growth equipment, the lower end of the rotating rod is fixedly connected with a chassis, the graphite tray at the lowest part is supported on the chassis, and the upper surface of the chassis is provided with a limiting bulge matched with the limiting groove of the graphite tray.
In the multi-piece loaded silicon carbide epitaxial growth device, the driving mechanism comprises a rotating shaft arranged at the bottom of the reaction chamber and a motor used for driving the rotating shaft to rotate; the upper end of the rotating shaft is hexagonal, a connecting sleeve is arranged at the bottom of the chassis, and the connecting sleeve is provided with a hexagonal sleeve hole matched with the upper end of the rotating shaft.
In the multi-piece loaded silicon carbide epitaxial growth device, a rotatable connecting rod coaxially penetrates through the rotating rod, the lower end of the connecting rod extends into the hexagonal sleeve hole and is provided with an external thread, and a pressing plate pressed on the top of the rotating rod is arranged at the upper end of the connecting rod; the rotating shaft is provided with an internal thread hole matched with the lower end of the connecting rod.
In the multi-piece loaded silicon carbide epitaxial growth equipment, the lower part of the connecting rod is provided with a convex ring which is used for abutting against the top wall of the hexagonal sleeve hole, and the upper end of the connecting rod is provided with a handle.
In the multi-piece loaded silicon carbide epitaxial growth equipment, the air inlet mechanism comprises a hollow air inlet box, an air inlet pipe and a plurality of air injection holes, wherein the air inlet pipe is arranged on one side, back to the tray rack, of the air inlet box, and the air injection holes are uniformly formed in one side, facing the tray rack, of the air inlet box.
In the multi-piece loaded silicon carbide epitaxial growth equipment, the air injection holes are provided with air equalizing nets.
In the multi-piece loaded silicon carbide epitaxial growth equipment, the air outlet mechanism comprises a hollow air outlet box, an air outlet pipe arranged on one side of the air outlet box, which is back to the tray rack, a plurality of air suction holes uniformly arranged on one side of the air outlet box, which faces the tray rack, and an air suction pump connected with the air outlet pipe.
In the multi-piece loaded silicon carbide epitaxial growth equipment, the inner side of the reaction chamber is provided with a heat insulation layer.
Has the advantages that:
the multi-piece loaded silicon carbide epitaxial growth equipment provided by the invention has the following advantages:
1. the tray frame adopts a multilayer structure, and each layer can be used for placing a plurality of substrates, so that a large number of epitaxial wafers can be produced simultaneously;
2. the tray frame adopts a multilayer structure, fully utilizes the space in the reaction chamber, has a compact structure and is beneficial to saving electric energy;
3. the tray frame adopts a multilayer structure, so that the reaction gas can be fully contacted with each substrate when flowing, the gas utilization rate is high, the cost is favorably reduced, and the tray frame is more environment-friendly;
4. because the tray frame can rotate, the heating of each substrate and the contact of each substrate and reaction gas are uniform, and therefore, the epitaxial wafer grows uniformly.
Drawings
Fig. 1 is a schematic structural diagram of a multi-wafer-loaded silicon carbide epitaxial growth apparatus provided by the present invention.
Fig. 2 is a schematic structural diagram of a tray frame in the multi-piece loaded silicon carbide epitaxial growth apparatus provided by the invention.
Fig. 3 is a perspective view of a graphite tray in the multi-piece loaded silicon carbide epitaxial growth apparatus provided by the present invention.
Fig. 4 is a perspective view of a multi-piece loaded silicon carbide epitaxial growth apparatus according to the present invention, with the bottom of the graphite tray facing upward.
Fig. 5 is a schematic structural diagram of a gas inlet mechanism in the multi-wafer-loading silicon carbide epitaxial growth apparatus provided by the invention.
Fig. 6 is a schematic structural diagram of a gas outlet mechanism in the multi-wafer-loaded silicon carbide epitaxial growth apparatus provided by the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The following disclosure provides embodiments or examples for implementing different configurations of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
For convenience of description, herein, the left-right direction coincides with the left-right direction in fig. 1.
Referring to fig. 1-6, the multi-plate loaded silicon carbide epitaxial growth apparatus provided by the present invention includes a susceptor 1, a reaction chamber 2 disposed on the susceptor, an air inlet mechanism 3 disposed on the left side of the reaction chamber, an air outlet mechanism 4 disposed on the right side of the reaction chamber, a heating coil 5 (an induction coil) disposed at the bottom of the reaction chamber, a tray frame 6 rotatably disposed in the middle of the reaction chamber, and a driving mechanism 7 for driving the tray frame to rotate;
the tray frame 6 comprises a vertical rotary rod 6.1 and a plurality of graphite trays 6.2 horizontally connected with the rotary rod in series; a plurality of positioning grooves 6.2a for placing the substrate 90 are uniformly arranged on the upper surface of each graphite tray 6.2; as shown in fig. 2 and 3.
When the device works, a silicon carbide substrate is placed into the positioning grooves 6.2a of the graphite trays 6.2, then the heating coil 5 works to generate an alternating magnetic field, the graphite trays 6.2 are heated under the action of the magnetic field, so that the graphite trays 6.2 are heated, reaction gas enters the reaction chamber 2 from the gas inlet mechanism 3, reacts with the substrate 90 and then is discharged from the gas outlet mechanism 4, and in the process, the tray frame 6 is driven to rotate by the driving mechanism 7. The multi-piece loaded silicon carbide epitaxial growth equipment has the advantages that:
1. the tray frame 6 adopts a multilayer structure, and a plurality of substrates 90 can be placed on each layer, so that a large number of epitaxial wafers can be produced simultaneously; generally, 2-10 graphite trays 6.2 are provided, each of which can hold 3-10 substrates;
2. the tray frame 6 adopts a multilayer structure, fully utilizes the space in the reaction chamber 2, has a compact structure and is beneficial to saving electric energy; compared with the existing silicon carbide epitaxial growth equipment for simultaneously producing a plurality of silicon carbide wafers, the power consumption for producing the same number of epitaxial wafers can be reduced by 50 percent;
3. the tray frame 6 adopts a multilayer structure, so that the reaction gas can fully contact with each substrate 90 when flowing, the gas utilization rate is high, the cost is reduced, and the tray frame is environment-friendly; compared with the existing silicon carbide epitaxial growth equipment for single-chip production, the utilization rate of gas is improved from 30% to 80%;
4. since the tray frame 6 is rotatable, each substrate 90 is heated and contacted with the reaction gas more uniformly, and thus the epitaxial wafer grows uniformly.
In some preferred embodiments, see fig. 3, the edge of each positioning groove 6.2a is provided with at least one recess 6.2b for the insertion of a finger, so that the finger can be inserted into the recess to remove the workpiece. In addition, an air hole penetrating to the bottom of the graphite tray 6.2 can be formed in the bottom of each positioning groove 6.2a, so that the problem that workpieces are difficult to take out due to negative pressure when the workpieces are taken out is avoided.
Preferably, the number of graphite trays 6.2 in the tray rack 6 is adjustable. Referring to fig. 2, a plurality of groups of jacks are arranged (preferably arranged at equal intervals) on the rotating rod 6.1 from top to bottom, and each group of jacks comprises at least two jacks 6.1a uniformly arranged along the circumferential direction; graphite tray 6.2 slides and wears to establish on rotary rod 6.1, and presses on a set of bolt, and this group of bolt includes a plurality of removable bolts 6.3 of pegging graft on a set of jack, and graphite tray 6.2's bottom is provided with the spacing groove 6.2c that supplies bolt 6.3 to stretch into (see fig. 4). When the graphite tray 6.2 is installed, the bolt 6.3 is firstly inserted into the corresponding jack 6.1a, then the graphite tray 6.2 is sleeved, and the limit groove 6.2c is aligned to the bolt 6.3 when the graphite tray is sleeved; the bolt can support the graphite tray 6.2 on one hand, and can be matched with the limiting groove 6.2c to transmit the graphite tray 6.2 on the other hand, so that the graphite tray 6.2 can rotate along with the rotating rod 6.1; by adopting the connecting structure, the graphite tray 6.2 is convenient and quick to assemble and disassemble, adjust the position and adjust the quantity. The connection mode between the rotating rod and the graphite tray is not limited to this, and for example, the graphite tray may be directly locked to the rotating rod by a locking screw.
In some embodiments, see fig. 2, the lower end of the rotating rod 6.1 is fixedly connected to a chassis 6.4, the lowermost graphite tray 6.2 is supported on the chassis 6.4 (see fig. 1), and the upper surface of the chassis 6.4 is provided with a limiting protrusion 6.4a adapted to the limiting groove 6.2c of the graphite tray 6.2.
Further, as shown in fig. 1, the driving mechanism 7 includes a rotating shaft 7.1 disposed at the bottom of the reaction chamber, and a motor 7.2 for driving the rotating shaft 7.1 to rotate; the upper end of the rotating shaft 7.1 is hexagonal, the bottom of the chassis 6.4 is provided with a connecting sleeve 6.4b, and the connecting sleeve is provided with a hexagonal sleeve hole 6.4c matched with the upper end of the rotating shaft 7.1, as shown in fig. 2. When carrying out graphite tray 6.2 position and quantity adjustment and when placing substrate 90, all can take out whole tray frame 6, put into the reacting chamber again after the dress and peg graft with pivot 7.1, convenient and fast. The upper end of the rotating shaft 7.1 can also be in a non-circular shape such as a triangle, a quadrangle, an ellipse and the like, and the hexagonal trepan boring 6.4c is replaced correspondingly.
It should be noted that, in order to facilitate taking and placing the tray rack 6, the top cover 2.1 is disposed at the top of the reaction chamber 2, and the top cover 2.1 can be opened when the tray rack 6 is taken and placed. In this embodiment, the top cover 2.1 is hinged to the upper end of the reaction chamber 2, and the top cover 2.1 is provided with a cover handle 2.2 for opening.
Preferably, as shown in fig. 2, a rotatable connecting rod 6.5 is coaxially arranged in the rotating rod 6.1 in a penetrating manner, the lower end of the connecting rod 6.5 extends into the hexagonal sleeve hole 6.4c and is provided with an external thread, and the upper end of the connecting rod 6.5 is provided with a pressing plate 6.5a pressed on the top of the rotating rod 6.1; the rotating shaft 7.1 is provided with an internal thread hole 7.1a matched with the lower end of the connecting rod 6.5. After the connecting sleeve 6.4b is sleeved into the rotating shaft 7.1, the connecting rod 6.5 can be rotated to connect the lower end of the connecting rod with the threaded hole 7.1a, and at the moment, the pressing plate 6.5a presses the rotating rod 6.1, so that the separation of the tray frame 6 and the rotating shaft 7.1 in the working process can be avoided.
Furthermore, as shown in fig. 2, a convex ring 6.5b for abutting against the top wall of the hexagonal sleeve hole 6.4c is arranged at the lower part of the connecting rod 6.5, and a handle 6.5c is arranged at the upper end of the connecting rod 6.5. The connecting rod 6.5 can be forced to rotate by the handle 6.5c, so that the use is convenient; on the other hand, the whole tray rack 6 can be lifted by the handle 6.5c for taking and placing, and the convex ring 6.5b is abutted against the top wall of the hexagonal sleeve hole 6.4c, so that the connecting rod 6.5 is prevented from being separated from the rotating rod 6.1.
In some preferred embodiments, see fig. 2, the rotating rod 6.1 is of a two-layer structure, the inner layer being steel and the outer layer being graphite; wherein the inner layer provides the supporting function, and the outer layer has good heat conductivity, and can be heated by alternating magnetic field, therefore it can carry out heat conduction between each graphite tray 6.2, improves the temperature homogeneity between each graphite tray 6.2, also is the heat source, can further improve the effective utilization ratio of electric energy, can improve the efficiency.
Specifically, as shown in fig. 5, the air intake mechanism 3 includes a hollow air intake box 3.1, an air intake pipe 3.2 disposed on a side of the air intake box facing away from the tray frame 6, and a plurality of air injection holes 3.3 uniformly disposed on a side of the air intake box facing the tray frame. Reaction gas firstly enters the inner cavity of the air inlet box 3.1 from the air inlet pipe 3.2 and then uniformly flows out from each gas injection hole 3.3, so that the uniformity of the airflow can be improved, and the growth uniformity of epitaxial wafers on each graphite tray 6.2 is ensured.
In some preferred embodiments, the air injection holes 3.3 are provided with a wind equalizing net 3.4. When the gas flows out from the gas injection holes 3.3, the gas uniformly flows out from the meshes of the air equalizing net 3.4, so that the gas can flow through the graphite tray 6.2 and the substrate 90 in a laminar flow instead of a turbulent flow, the growth uniformity of the epitaxial wafer can be further improved, and the product quality is improved.
Specifically, as shown in fig. 6, the air outlet mechanism 4 comprises a hollow air outlet box 4.1, an air outlet pipe 4.2 arranged on one side of the air outlet box, which is back to the tray rack 6, a plurality of air suction holes 4.3 uniformly arranged on one side of the air outlet box, which is facing to the tray rack, and an air suction pump 4.4 connected with the air outlet pipe. The air is uniformly sucked from each air suction hole 4.3 during air outlet, and the uniformity of the air flow at each position is further improved.
In addition, the inner side of the reaction chamber 2 is provided with a heat preservation layer 8 to avoid heat loss and reduce energy consumption. Wherein, the upper heat preservation layer 8 is connected with the top cover 2.1 and can swing along with the top cover.
In some embodiments, the upper insulating layer 8 is connected with the top cover 2.1 through the multi-heel connecting column 2.3, so that the insulating layer 8 and the top cover 2.1 are spaced, and the heat insulation effect can be further improved.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, which are substantially the same as the present invention.
Claims (9)
1. The multi-piece loaded silicon carbide epitaxial growth equipment is characterized by comprising a base, a reaction chamber arranged on the base, an air inlet mechanism arranged on the left side of the reaction chamber, an air outlet mechanism arranged on the right side of the reaction chamber, a heating coil arranged at the bottom of the reaction chamber, a tray frame rotatably arranged in the middle of the reaction chamber and a driving mechanism used for driving the tray frame to rotate;
the tray frame comprises a vertical rotary rod and a plurality of graphite trays which are horizontally connected with the rotary rod in series; a plurality of positioning grooves for placing substrates are uniformly arranged on the upper surface of each graphite tray;
the rotary rod is provided with a plurality of groups of jacks from top to bottom, and each group of jacks comprises at least two jacks uniformly distributed along the circumferential direction; the graphite tray is arranged on the rotary rod in a sliding penetrating mode and pressed on a group of inserting pins, the group of inserting pins comprise a plurality of inserting pins which are detachably inserted in a group of inserting holes, and limiting grooves for the inserting pins to extend into are formed in the bottom of the graphite tray;
the edge of the positioning groove is at least provided with a notch for fingers to insert.
2. The multi-piece loaded silicon carbide epitaxial growth apparatus according to claim 1, wherein the lower end of the rotating rod is fixedly connected with a chassis, the lowermost graphite tray is supported on the chassis, and a limiting protrusion matched with a limiting groove of the graphite tray is arranged on the upper surface of the chassis.
3. A multi-piece loaded silicon carbide epitaxial growth apparatus according to claim 2, wherein the driving mechanism comprises a rotary shaft provided at the bottom of the reaction chamber, and a motor for driving the rotary shaft to rotate; the upper end of the rotating shaft is hexagonal, a connecting sleeve is arranged at the bottom of the chassis, and the connecting sleeve is provided with a hexagonal sleeve hole matched with the upper end of the rotating shaft.
4. The multi-piece loaded silicon carbide epitaxial growth apparatus according to claim 3, wherein a rotatable connecting rod is coaxially inserted through the rotating rod, the lower end of the connecting rod extends into the hexagonal sleeve hole and is provided with an external thread, and the upper end of the connecting rod is provided with a pressing plate pressing on the top of the rotating rod; the rotating shaft is provided with an internal thread hole matched with the lower end of the connecting rod.
5. The multi-piece loaded silicon carbide epitaxial growth apparatus according to claim 4, wherein the lower portion of the connecting rod is provided with a convex ring for abutting against the top wall of the hexagonal trepan boring, and the upper end of the connecting rod is provided with a handle.
6. A multi-piece loaded silicon carbide epitaxial growth apparatus according to claim 1, wherein the air inlet mechanism comprises a hollow air inlet box, an air inlet pipe arranged on the side of the air inlet box facing away from the tray frame, and a plurality of air injection holes uniformly arranged on the side of the air inlet box facing the tray frame.
7. Multi-piece loaded silicon carbide epitaxial growth apparatus according to claim 6, wherein the gas injection holes are provided with a gas-equalizing mesh.
8. The multi-piece loaded silicon carbide epitaxial growth apparatus according to claim 1, wherein the gas outlet mechanism comprises a hollow gas outlet box, a gas outlet pipe arranged on one side of the gas outlet box, which faces away from the tray frame, a plurality of gas suction holes uniformly arranged on one side of the gas outlet box, which faces towards the tray frame, and a gas suction pump connected with the gas outlet pipe.
9. Multi-piece loaded silicon carbide epitaxial growth apparatus according to claim 1, wherein the inside of the reaction chamber is provided with an insulating layer.
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| CN114250451B (en) * | 2021-06-01 | 2023-03-07 | 浙江求是半导体设备有限公司 | Epitaxial growth device |
| CN115613131B (en) * | 2022-10-17 | 2023-11-28 | 江苏汉印机电科技股份有限公司 | Vacuum chamber of silicon carbide epitaxial chemical vapor deposition system |
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| CN103060774A (en) * | 2011-10-24 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and substrate processing equipment with same |
| CN103590020A (en) * | 2012-08-13 | 2014-02-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray assembly and MOCVD equipment with the same |
| CN104342751A (en) * | 2013-08-02 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and MOCVD device |
| CN104195629A (en) * | 2014-08-20 | 2014-12-10 | 中国科学院半导体研究所 | Tower-type multichip epitaxial growth device |
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