CN111058015A - 基板处理装置、基板的输入方法以及基板处理方法 - Google Patents

基板处理装置、基板的输入方法以及基板处理方法 Download PDF

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CN111058015A
CN111058015A CN201910956845.0A CN201910956845A CN111058015A CN 111058015 A CN111058015 A CN 111058015A CN 201910956845 A CN201910956845 A CN 201910956845A CN 111058015 A CN111058015 A CN 111058015A
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opening
substrate
processing apparatus
substrate processing
inner tube
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永田朋幸
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Tokyo Electron Ltd
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Abstract

本发明提供基板处理装置、基板的输入方法以及基板处理方法。该基板处理装置能够使内管与基板之间的距离接近。该基板处理装置具有：圆筒形状的反应管，其在下端具有开口；盖体，其能够打开关闭该反应管的所述开口；基板保持件，其能够载置于该盖体，能够在纵向上空开间隔地多层保持多个基板；以及内管，其能够载置于所述盖体，覆盖所述基板保持件。

Description

基板处理装置、基板的输入方法以及基板处理方法
技术领域
本公开涉及基板处理装置、基板的输入方法以及基板处理方法。
背景技术
以往以来，公知有一种基板处理装置，该基板处理装置具有：内管，其收纳多个基板；外管，其包围内管；可动壁，其以能够移动的方式设于内管的内部或内管与外管之间；喷射器，其向基板供给处理气体；以及排气单元，其将供给到基板的处理气体排出，在内管的侧壁形成有第1开口部，在可动壁形成有第2开口部，排气单元经由第1开口部和第2开口部将供给到基板的处理气体排出(例如参照专利文献1)。
专利文献1：日本特开2018－46114号公报
发明内容
发明要解决的问题
本公开提供能够使内管与基板之间的距离接近的基板处理装置、基板的输入方法以及基板处理方法。
用于解决问题的方案
为了达成上述目的，本发明的一技术方案所涉及的基板处理装置具有：圆筒形状的反应管，其在下端具有开口；盖体，其能够打开关闭该反应管的所述开口；基板保持件，其能够载置于该盖体，能够在纵向上空开间隔地多层保持多个基板；以及内管，其能够载置于所述盖体，覆盖所述基板保持件。
发明的效果
采用本发明，能够使内管与基板保持件之间的距离接近。
附图说明
图1是第1实施方式所涉及的基板处理装置的概略图。
图2是用于说明图1的基板处理装置的反应管的横剖视图。
图3是表示内管的一个例子的立体图。
图4是示出中心管的一个例子的立体图。
图5是用于说明转台的旋转机构的一个例子的纵剖视图。
图6是用于说明第1实施方式所涉及的基板输送方法的图。
图7是用于说明基板的输入动作的俯视图。
图8是示出内管与中心管之间的更详细的关系的立体图。
图9是示出本公开的第2实施方式所涉及的基板处理装置的一个例子的横剖视图。
图10是示出本公开的第3实施方式所涉及的基板处理装置的一个例子的图。
具体实施方式
以下，参照附图对用于实施本发明的方式进行说明。
[第1实施方式]
对本公开的第1实施方式所涉及的基板处理装置进行说明。图1是第1实施方式所涉及的基板处理装置的概略图。
如图1所示，基板处理装置1具有：反应管46，其收纳作为基板的半导体晶圆(以下称作“晶圆W”)；盖体36，其气密地堵塞反应管46的下端的开口部侧；晶圆舟38，其为以规定的间隔保持多个晶圆W并相对于反应管46内进行插拔的基板保持件；喷射器40，其向反应管46内导入规定的气体；排气装置41，其将反应管46内的气体排出；以及加热器42，其加热晶圆W。
反应管46具有下端部开放的有顶的圆筒形状的内管43、下端部开放且覆盖内管43的外侧的有顶的圆筒形状的中心管44以及覆盖中心管44的外侧的有顶的圆筒形状的外管45。内管43、中心管44以及外管45由石英等耐热性材料形成，呈同轴状配置而成为三层管构造。
内管43的顶部例如成为平坦。在内管43的与喷射器40相对的区域设有供给开口43A。内管43不收纳喷射器40，而设于比喷射器40靠内侧的位置。而且，喷射器40供给的处理气体经由供给开口43A供给到内管43内。
喷射器40沿着内管43在纵向上延伸设置。喷射器40设于内管43的外部，但设有包围内管43和喷射器40的中心管44，而防止处理气体的扩散。
图2是用于说明图1的基板处理装置的反应管的横剖视图。如图2所示，内管43在与喷射器40相对的区域设有较宽的供给开口43A。而且，在供给开口43A的相反侧设有宽度小于供给开口43A的宽度的排气开口43B。内管43接近晶圆W的外形附近地设置。
在中心管44沿着其长度方向(上下方向)形成有收纳喷射器40的喷嘴收纳部48。在第1实施方式中，如图2所示，使中心管44的侧壁的一部分朝向外侧突出而形成凸部50，将凸部50内形成为喷嘴收纳部48。
图3是表示内管43的一个例子的立体图。如图3所示，内管43具有宽度L1的供给开口43A和宽度L2的排气开口43B。供给开口43A开放得较大是因为具有经由供给开口43A向设于内管43内的晶圆舟38内移载晶圆W的用途。即，内管43的供给开口43A不仅具有作为将自喷射器40供给的处理气体向内管43内导入的导入口的作用，还具有作为晶圆W的输入输出口的作用。因而，为了在移载晶圆W时避免晶圆W与内管43之间的接触，供给开口43A需要具有大于晶圆W的直径的宽度L1，因此，设为宽度较大的开口。
另外，供给开口43A的纵向上的长度优选以包含晶圆舟38的载置有多层晶圆W的范围的方式设定，以使自喷射器40供给的处理气体直接供给到晶圆W。即，优选供给开口43A的上端设定于比在晶圆舟38的最上层载置的晶圆W高的位置，供给开口43A的下端设定于比在晶圆舟38的最下层载置的晶圆W低的位置。
内管43在供给开口43A的相反侧具有排气开口43B。在反应管46内进行基板处理的情况下，自喷射器40供给的处理气体优选形成与大致水平的晶圆W的表面平行的层流而流动。由此，不仅是晶圆W的喷射器40附近的位置，还能够使处理气体遍及晶圆W的与喷射器40相反的一侧的位置，能够提高基板处理的面内均匀性。为了形成这样的层流，优选设为在喷射器40的相反侧进行排气而形成大致水平的平行流的流动这样的结构。因而，如图1所示，基板处理装置1成为在喷射器40的相反侧设有排气开口43B的结构。与其相对应地，在排气开口43B的相反侧、且是接近供给开口43A的位置设有气体出口82。通过使气体出口82远离排气开口43B，能够缓和在晶圆舟的下方区域较强程度地排气的倾向，能够形成更均匀的层流。而且，排气开口43B的纵向上的长度也与供给开口43A相同地设为能够包含载置于晶圆舟38的晶圆W的上层到下层的长度，此外，优选设定为与供给开口43A相同的高度。这是因为，由此能够使处理气体的供给侧与排出侧相对应，而容易形成层流。
内管43的内表面优选设为尽可能地接近晶圆舟38的结构。内管43起到防止自喷射器40供给来的处理气体扩散而使其停留在晶圆W上和晶圆W的周边的作用。由此，能够高效地使处理气体吸附于晶圆W的表面。若内管43与晶圆舟38之间的距离较远，则处理气体容易扩散，导致相对于晶圆W的吸附量减少。本来内管43就是为了防止这样的处理气体的扩散而设置的，但内管43与晶圆W之间的距离越近，则防止处理气体的扩散而促进处理气体相对于晶圆W的表面的吸附的效果越大。因而，内管43的内表面形状优选设为沿着晶圆舟38的外形的形状，其间隙也设定为9mm以下，优选设定为7mm以下，更优选设定为6mm以下，在本实施方式所涉及的基板处理装置中，能够设定为5mm。
这是因为，内管43和晶圆舟38均从最初开始设于盖体36上。即，在以往的基板处理装置中，内管43设于反应管46内。于是，晶圆舟38与内管43之间的间隔需要考虑反应管46侧的组装误差和盖体36侧的组装误差这两者，而该间隔也存在限制。
然而，在本实施方式所涉及的基板处理装置1中，晶圆舟38和内管43这两者仅考虑以盖体36侧为基准的组装误差即可。即，如图1所示那样，成为与盖体36的旋转轴66同轴地设置旋转轴104且在转台65上载置内管43而成的结构。而且，晶圆舟38借助保温台72支承于旋转轴66上的旋转板70上。也就是说，晶圆舟38和内管43这两者均以旋转轴66为基点，而仅考虑相对于旋转轴66的组装误差即可，因此，组装误差非常小，而能够以较小的间隙配置晶圆舟38和内管43。
而且，在本实施方式所涉及的基板处理装置中，为从最初开始在内管43内设有晶圆舟38、或从最初开始晶圆舟38被内管43覆盖的状态，因此，能够在静止的状态下对间隙进行设定。因而，能够尽可能地缩小间隙的设定。以往，需要进行向内管43内***晶圆舟38这样的移动，因此，需要考虑能够***移动的间隙，而间隙的缩小存在限制。另一方面，在本实施方式中，能够在最初设定间隙，之后的相对移动能够以同轴进行，因此，能够使相对移动产生的误差极小。
内管43在侧面的供给开口43A的两侧端部包括突出面43C。该突出面43C以覆盖喷射器40的两侧的方式设置，是为了防止自喷射器40供给来的处理气体向左右方向扩散而设置的挡板。并不是必须要在供给开口43A的两侧设置突出面43C，但从防止处理气体的扩散的观点来看，优选尽可能地设置突出面43C。如图3所示那样，突出面43C优选在纵向上设于自供给开口43A的上端到下端的全部的范围。
另外，从防止处理气体的扩散的观点来看，内管43优选还包括上表面43D。
这样，通过以同轴的旋转轴66为基准进行晶圆舟38和内管43的组装，并以沿着晶圆舟38的外形和晶圆W的外形的方式使内管43接近而设置内管43，能够有效地防止处理气体的扩散。
图4是示出中心管44的一个例子的立体图。与内管43相同，如图4所示，在中心管44的与喷嘴收纳部48相反的一侧的侧壁沿着其长度方向(上下方向)形成有宽度L3的矩形形状的排气开口部52。
排气开口部52为以能够排出内管43内的处理气体的方式形成的气体排出口。排气开口部52的长度与晶圆舟38的长度相同或长于晶圆舟38的长度且形成为分别向上下方向延伸。即，排气开口部52的上端配置为延伸到与晶圆舟38的上端相对应的位置以上的高度，排气开口部52的下端配置为延伸到与晶圆舟38的下端相对应的位置以下的高度。这一点与内管43的排气开口43B相同。具体而言，如图1所示，晶圆舟38的上端与排气开口部52的上端之间的高度方向上的宽度L3在0mm～5mm左右的范围内。而且，晶圆舟38的下端与排气开口部52的下端之间的高度方向上的宽度L4在0mm～350mm左右的范围内。而且，排气开口部52的宽度L5在10mm～400mm左右的范围内，优选在40mm～200mm左右的范围内。
反应管46的下端利用例如由不锈钢形成的圆筒形状的歧管54支承。在歧管54的上端部形成有凸缘部56，在凸缘部56上设置并支承外管45的下端部。在凸缘部56与外管45的下端部之间夹设有O形密封圈等密封构件58而使外管45内成为气密状态。
在歧管54的上部的内壁设有环状的支承部60，在支承部60上设置并支承中心管44的下端部。在歧管54的下端的开口部隔着O形密封圈等密封构件62气密地安装有盖体36，将反应管46的下端的开口部侧、即歧管54的开口部气密地堵塞。盖体36例如由不锈钢形成。
在盖体36的中央部贯穿设置有旋转轴66。盖体36的下部支承于包括舟皿升降机的升降单元68的臂68A，构成为利用升降单元68打开关闭歧管54的开口。而且，旋转轴66利用马达69(参照图5)进行旋转。
在旋转轴66的上端设有旋转板70，在旋转板70上借助石英制的保温台72载置用于保持晶圆W的晶圆舟38。因而，通过使升降单元68升降，盖体36和晶圆舟38一体地上下移动，能够相对于反应管46内***拔出晶圆舟38。
喷射器40设于歧管54，向内管43内导入处理气体、吹扫气体等气体。喷射器40构成为石英制的气体喷嘴，可以设有多个(例如3个)。各喷射器40在内管43内沿着其长度方向设置，并且以其基端部弯曲成L字状并贯穿歧管54的方式被支承。
如图2所示，喷射器40以在中心管44的喷嘴收纳部48内沿着周向成为一列的方式设置。在各喷射器40沿着其长度方向以规定的间隔形成有多个气体孔40A，能够利用各气体孔40A朝向水平方向放出各气体。规定的间隔例如以与支承于晶圆舟38的晶圆W之间的间隔相同的方式设定。而且，高度方向上的位置以各气体孔40A位于在上下方向上相邻的晶圆W间的中间的方式设定，而能够高效地向晶圆W之间的空间部供给各气体。
作为气体的种类，使用原料气体、氧化气体以及吹扫气体，能够对各气体一边进行流量控制一边根据需要经由各喷射器40进行供给。作为原料气体而使用含硅气体，作为氧化气体而使用臭氧(O3)气体，作为吹扫气体而使用氮(N2)气，能够利用原子层沉积(ALD：Atomic Layer Deposition)法形成氧化硅膜。另外，所使用的气体的种类能够根据成膜的膜的种类适当选择。
而且，在歧管54的上部的侧壁且是支承部60的上方形成有气体出口82，能够经由中心管44与外管45之间的空间部84使自排气开口43B和排气开口部52所排出的内管43内的气体排出。在气体出口82设有排气装置41。排气装置41具有与气体出口82连接的排气通路86，在排气通路86依次夹设有压力调整阀88和真空泵90，而能够将反应管46内抽真空。排气开口43B的宽度L2和排气开口部52的宽度L5设定为10mm～400mm的范围内的大小，而能够有效地将内管43内的气体排出。
在外管45的外周侧以覆盖外管45的方式设有圆筒形状的加热器42，而对晶圆W进行加热。
而且，在内管43的下方设有支承内管43的转台65。如图1所示，转台65具有圆盘形状，构成为能够在上表面载置内管43。
在转台65的下方设有旋转轴104，该旋转轴104贯穿盖体。旋转轴104构成为能够利用马达106(参照图5)与旋转轴66独立地进行移动(旋转)。通过使旋转轴66旋转而使旋转板70旋转，能够使晶圆舟38的位置变化。由此，能够一边使晶圆舟38旋转一边进行基板处理。
图5是用于说明转台65的旋转机构的一个例子的纵剖视图。如图5所示，旋转板70和转台65构成为能够利用设于盖体36的双轴的旋转轴66、104独立地进行旋转。具体而言，旋转板70经由旋转轴66与马达69连接，利用马达69调整旋转轴66的转速和转动角度，从而以规定的转速旋转规定的转动角度。转台65经由旋转轴104与马达106连接，利用马达106调整旋转轴104的转动角度和转速，从而以规定的转速旋转规定的转动角度。在晶圆舟38于反应管46的下方位置移载晶圆时转台65朝向位于与喷射器40相反的一侧的移载装置侧，仅在移载结束后朝向喷射器40侧，因此，旋转180度即可，只要能够可靠地旋转180度，就没有对转速等的详细的要求，能够设定为能够可靠地进行动作的转速。
而且，在旋转轴66与旋转轴104之间的间隙以及旋转轴66与盖体36之间的间隙设有吹扫气体流路108，而能够供给N2气体等吹扫气体。由此，能够防止处理气体侵入于旋转轴66、104之间的间隙而腐蚀旋转轴。而且，在旋转轴66与旋转轴104之间以及旋转轴66与将旋转轴66固定于盖体36的壳体61之间设有轴承部63和磁性流体密封部64，该轴承部63具有滚柱轴承。由于具有磁性流体密封部64，因而能够防止大气、灰尘侵入于反应管46的内部。
返回到图1，例如利用包括计算机等的控制部110来控制这样形成的基板处理装置1的整体的动作，进行该动作的计算机的程序存储于存储介质112。存储介质112例如包括软盘、微型光盘、硬盘、闪存、DVD等。
接着，对使用了第1实施方式所涉及的基板处理装置的基板输送方法进行说明。
图6是用于说明第1实施方式所涉及的基板输送方法的图。在图6中，在基板输送区域10设有FIMS口8、基板保管器2、载置台8a、分隔壁18、门机构19以及移载机构16。
如图6所示，在将基板保管器2载置于载置台8a之后，在使基板保管器2与分隔壁18密合的状态下打开门机构19，使用移载机构16将晶圆W取出，并向位于相反侧的内管43内的晶圆舟38移载。因而，内管43使供给开口43A朝向移载机构16侧而接受晶圆W。
在使晶圆W移载至晶圆舟38之后，使转台65旋转，使供给开口43A朝向喷射器40侧。
若在该状态下使盖体36上升，则能够不与喷射器40干涉地将内管43向反应管46内***。而且，在内管43停止旋转的状态下，一边使晶圆舟38旋转一边自喷射器40供给处理气体，能够适当地进行基板处理。此时，由于晶圆W与内管43之间的距离接近，因而效率良好地向晶圆W供给处理气体，能够提高沉积速度和面内均匀性。
图7是用于说明基板的输入动作的俯视图。图7的(a)是示出晶圆移载时的状态的图。如图7的(a)所示，在移载晶圆W时，需要如图6中说明的那样使供给开口43A朝向移载机构16侧，因此，使供给开口43A朝向移载机构16侧，经由供给开口43A向晶圆舟38移载晶圆W。
图7的(b)是示出晶圆移载后将晶圆舟38和内管43***于中心管44内的状态的图。在将全部的晶圆W移载至晶圆舟38之后，使转台65旋转，使内管43的供给开口43A朝向喷射器40侧。然后，使盖体36上升，向反应管46内的中心管44内***内管43。于是，内管43沿着晶圆舟38的外形接近地配置，并且成为供给开口43A朝向喷射器40的正面的状态。突出面43C成为从左右方向覆盖喷射器40的两侧的状态，而抑制喷射器40供给来的处理气体向左右扩散。而且，中心管44利用连续的壁面覆盖内管43的供给开口43A，而防止处理气体的扩散。
通过控制部110控制设于盖体36的旋转轴104的动作，从而进行这样的动作。而且，基板处理中的晶圆舟38的旋转动是旋转轴66的动作，因而通过控制部110控制旋转轴66的动作，从而进行基板处理。
排气开口43B和排气开口部52位于喷射器40的相反侧，形成自喷射器40供给来的处理气体直行穿过排气开口43B和排气开口部52而排出这样的流路，促进处理气体成为层流状态。
另外，喷射器40可以根据基板处理的种类设置所需要的个数。例如，若是氧化硅膜的成膜，则需要含硅气体、臭氧等氧化气体、进行吹扫的氮气等，而需要至少三个喷射器40。这样，能够根据用途来确定喷射器40的个数。
图8是示出内管43与中心管44之间更详细的关系的立体图。如图8所示，中心管44在内管43的周围进行包围。成为内管43的突出面43C防止处理气体向横向扩散、中心管44防止气体自供给开口43A的较大的开口扩散的结构。
这样，根据第1实施方式所涉及的基板处理装置和基板处理方法，能够利用中心管44防止处理气体的扩散，能够有效地向晶圆W供给处理气体。
[第2实施方式]
图9是示出本公开的第2实施方式所涉及的基板处理装置的一个例子的横剖视图。如图9所示，在第2实施方式所涉及的基板处理装置中，内管43的结构与第1实施方式所涉及的基板处理装置相同，但在未设置中心管44的方面与第1实施方式不同。
在第2实施方式所涉及的基板处理装置中，未设置中心管44，而是自外管145的内周壁面向内管43的突出面43C的外侧以与突出面43C相对的方式设有突出壁145A。突出壁145A自与突出面43C相反的一侧突出，成为由突出壁145A和突出面43C构成迷宫式密封件的形状。通过构成该迷宫式密封件，能够抑制处理气体自内管43内流出。
通过这样构成迷宫式密封件，还能够仅由外管45和内管43抑制气体的扩散。
根据第2实施方式所涉及的基板处理装置，能够具有简单的结构，并且能够防止处理气体自内管43流出。
另外，基板的输入方法和基板处理方法与第1实施方式相同，因而省略其说明。
[第3实施方式]
图10是示出本公开的第3实施方式所涉及的基板处理装置的一个例子的图。在第3实施方式所涉及的基板处理装置中，具有在内管43的下部设有防排气构件47的结构。防排气构件47为用于防止处理气体向下方排出的构件，为了使流路向下方的流导率降低，在表面设有多个突起47a，而缩小处理气体的流路，防止气体的通过。即，多个突起47a以覆盖各喷射器40之间的空间的方式设置。防排气构件47例如可以设于内管43的供给开口43A的下方。由此，能够抑制供给开口43A的下方的处理气体的流出。
如图10所示，防排气构件47构成为与内管43分体的构件，并设于内管43的内周面，还可以通过焊接等直接设置于内管43的外周面。而且，还可以在内管43的供给开口43A的下部，利用焊接等仅将突起47a直接固定于内管43的壁面。
另外，在内管43由石英构成的情况下，防排气构件47也优选由相同材料的石英构成。
而且，第3实施方式所涉及的基板处理装置能够通过将第1实施方式和第2实施方式这两者组合而构成。
以上，对本公开的优选的实施方式进行了详细说明，但本公开并不限定于上述的实施方式，只要不偏离本发明的范围，就能够对上述的实施方式施加各种变形和替换。

Claims (17)

1.一种基板处理装置，其中，
该基板处理装置具有：
圆筒形状的反应管，其在下端具有开口；
盖体，其能够打开关闭该反应管的所述开口；
基板保持件，其能够载置于该盖体，能够在纵向上空开间隔地多层保持多个基板；以及
内管，其能够载置于所述盖体，覆盖所述基板保持件。
2.根据权利要求1所述的基板处理装置，其中，
所述内管的侧面具有用于使基板能够向所述基板保持件移载的第1开口和在所述反应管内成为排气口的第2开口。
3.根据权利要求2所述的基板处理装置，其中，
所述第1开口和第2开口具有纵长的长方形的形状。
4.根据权利要求2或3所述的基板处理装置，其中，
所述第2开口小于所述第1开口。
5.根据权利要求2～4中任一项所述的基板处理装置，其中，
所述内管的内表面具有沿着所述基板保持件的外形的形状。
6.根据权利要求2～5中任一项所述的基板处理装置，其中，
所述盖体具有使所述基板保持件旋转的第1旋转轴和使所述内管旋转的第2旋转轴，
所述第1旋转轴和所述第2旋转轴以旋转中心一致的方式设置。
7.根据权利要求6所述的基板处理装置，其中，
所述第2旋转轴以包围使所述基板保持件旋转的所述第1旋转轴的方式设置，所述第2旋转轴具有能够载置所述内管的转台。
8.根据权利要求7所述的基板处理装置，其中，
所述第1旋转轴和第2旋转轴构成为能够隔着磁性流体密封件独立地进行旋转。
9.根据权利要求8所述的基板处理装置，其中，
在所述反应管内的规定区域设有喷射器，该喷射器沿着所述反应管的侧面的内周面铅垂地延伸，用于供给处理气体，
所述内管以所述第1开口与所述喷射器相对的方式配置于所述反应管内。
10.根据权利要求9所述的基板处理装置，其中，
该基板处理装置还具有：
控制部，其控制所述盖体、所述第1旋转轴以及第2旋转轴的动作；以及
移载装置，其将基板向所述基板保持件移载，
所述控制部进行如下的控制：
在将所述基板保持件向载置于所述盖体上的所述转台上的所述内管内移载时，以所述第1开口朝向所述移载装置侧的方式使所述转台旋转，
在所述基板移载至所述内管内的所述基板保持件之后，以所述内管的所述第1开口朝向配置有所述喷射器的方向的方式使所述转台旋转，在所述第1开口朝向配置有所述喷射器的方向的状态下使所述盖体上升而堵塞所述开口。
11.根据权利要求10所述的基板处理装置，其中，
使所述第2旋转轴停止而使所述内管成为固定的状态，一边使所述第1旋转轴旋转而使所述基板保持件旋转一边自所述喷射器供给处理气体，而对所述基板进行处理。
12.根据权利要求10或11所述的基板处理装置，其中，
在所述内管的所述第1开口的沿纵向延伸的左右端部设有突出面，该突出面以自左右方向包围所述喷射器的方式突出并沿纵向延伸。
13.根据权利要求12所述的基板处理装置，其中，
在所述反应管的内周设有突出壁，该突出壁向所述突出面的外侧延伸，并与所述突出面形成迷宫构造。
14.根据权利要求9～13中任一项所述的基板处理装置，其中，
在所述反应管内的所述内管与所述反应管之间设有中心管，该中心管自外侧覆盖所述第1开口，并且在包含所述第2开口在内的位置设有开口。
15.根据权利要求9～14中任一项所述的基板处理装置，其中，
在所述第1开口的下方设有防止所述处理气体向下方流出的防排气构件。
16.一种基板的输入方法，其中，
该基板的输入方法具有以下工序：
经由设于内管的侧面的第2开口将基板移载至基板保持件内，所述基板保持件设于载置在转台上的所述内管内，该基板保持件能够在纵向上具有间隔地多层保持多个基板，所述转台设于在下端具有第1开口的圆筒形状的反应管的下方所配置的盖体上；
以所述第2开口位于与设于所述反应管内的喷射器相对的平面位置的方式使所述转台旋转；以及
使所述盖体上升，以所述第2开口与所述喷射器相对的方式利用所述盖体堵塞所述第1开口。
17.一种基板处理方法，其中，
该基板处理方法具有以下工序：
利用权利要求16所述的基板的输入方法向所述反应管内输入所述基板保持件和所述内管；以及
一边利用轴心与使所述转台旋转的第1旋转轴的轴心一致的第2旋转轴使所述基板保持件旋转，一边自所述喷射器供给处理气体而对所述多个基板进行处理。
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