CN111048646A - Light emitting diode chip manufacturing method and light emitting diode chip - Google Patents
Light emitting diode chip manufacturing method and light emitting diode chip Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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Abstract
The invention discloses a light-emitting diode chip manufacturing method and a light-emitting diode chip, and the light-emitting diode chip comprises a lens, a fixing piece, a mounting seat, a chip and a mounting table, wherein the mounting table is fixedly connected to the upper side of the mounting seat, the chip is fixedly connected to the upper side of the mounting table, the fixing piece is sleeved on the outer sides of the mounting seat and the mounting table, the lens is arranged inside the fixing piece and is fixed through the fixing piece, the upper side of the mounting table is filled with silica gel wrapping the chip, the surface of the silica gel is provided with fluorescent powder, the chip is electrically connected with two gold wires, and the outer side of the fixing piece is symmetrically provided with. The invention has reasonable structural design, adopts a laser machine cutting mode, is particularly suitable for manufacturing the LED chip structure with high quality requirement, effectively improves the cleavage yield, reduces the leakage reject ratio, improves the overall yield of products, and improves the luminous efficiency of the chip by setting the fluorescent powder so as to meet the production requirement.
Description
Technical Field
The invention relates to the technical field of light emitting diode chips, in particular to a light emitting diode chip manufacturing method and a light emitting diode chip.
Background
The diode is an electronic device made of semiconductor materials (silicon, selenium, germanium and the like), is the first semiconductor device in the world, has unidirectional conductivity and a rectification function, is various in types, and is mainly applied to electronic circuits and industrial products.
An LED chip, also known as a light emitting diode, is a solid state semiconductor device that can directly convert electricity into light. The heart of the LED is a semiconductor wafer, one end of the wafer is attached to a support, the other end of the wafer is a cathode, and the other end of the wafer is connected with an anode of a power supply, so that the whole wafer is packaged by epoxy resin. The main material of the chip is monocrystalline silicon. The semiconductor wafer is composed of two parts, one of which is a P-type semiconductor in which holes predominate and the other of which is an N-type semiconductor in which electrons predominate. When the two semiconductors are connected, a P-N junction is formed between them. When current is applied to the wafer through the wire, electrons are pushed to the P region where they recombine with holes and then emit energy in the form of photons, which is the principle of LED light emission.
At present, in the preparation steps of common light emitting diodes, cutting is one of indispensable procedures, and the traditional cutting procedure mainly adopts a front-side diamond knife technology to perform a scribing process. However, in such a manner, more byproducts such as burning marks and chips are often left in the cutting channel, the chips are not easy to clean up, the chips are prone to generating a bad phenomenon of electric leakage, the light emitting brightness of the LED chips is affected, the light emitting efficiency of the chips is low, and the production requirements cannot be met.
Disclosure of Invention
Based on the technical problems in the background art, the invention provides a light emitting diode chip manufacturing method and a light emitting diode chip.
The light-emitting diode chip provided by the invention comprises a lens, a fixing piece, a mounting seat, a chip and a mounting table, wherein the mounting table is fixedly connected to the upper side of the mounting seat, the chip is fixedly connected to the upper side of the mounting table, the fixing piece is sleeved on the outer sides of the mounting seat and the mounting table, the lens is arranged inside the fixing piece and is fixed through the fixing piece, the upper side of the mounting table is filled with silica gel wrapping the chip, the surface of the silica gel is provided with fluorescent powder, the chip is electrically connected with two gold wires, the outer side of the fixing piece is symmetrically provided with two lead frames, and the two gold wires are respectively and electrically connected with the two lead.
Preferably, a solder-fixed connection produced by pressure welding is provided between the mounting table and the chip.
Preferably, mounting and mount pad all are circular structure, the mount table is located the upside middle part position of mount pad, the mounting adopts plastics material to make.
The invention also provides a manufacturing method of the light-emitting diode chip, which comprises the following steps:
s1, cleaning and drying: cleaning a silicon wafer by a wet method, washing the silicon wafer by deionized water, dehydrating and baking the silicon wafer, drying the silicon wafer by a hot plate, heating the silicon wafer for 1 to 2 minutes at the temperature of 150 to 250 ℃, and protecting the silicon wafer by nitrogen;
s2, priming: coating the bottom by adopting a hot plate of a gas-phase bottom film, performing HMDS vapor deposition, controlling the temperature to be 200-250 ℃, and processing for 30 seconds;
s3, rotary gluing: a. static gluing and dynamic gluing;
s4, soft baking: drying by a vacuum hot plate, and heating for 30-60 seconds at the temperature of 85-120 ℃;
s5, edge removal: after soft baking, removing an edge solvent by using PGMEA or EGMEA, spraying a small amount of solvent out of the edges of the front and back surfaces, and carefully controlling the solvent not to reach the effective area of the photoresist;
s6, alignment: pre-aligning, namely performing laser automatic alignment through nicks on a silicon wafer;
s7, exposure: contact exposure, proximity exposure, projection exposure;
s8, post-baking: drying by a hot plate, and heating for 1 minute at the temperature of 110-130 ℃;
s9, developing: a silicon wafer immersion type developing method, a continuous spray developing method and a puddle type developing method;
s10, hard baking: drying by a hot plate, and heating for 1-2 minutes at the temperature of 100-130 ℃;
s11, removing silicon nitride: removing the silicon nitride by a dry oxidation method;
s12, ion implantation: injecting boron ions into a substrate through a SiO2 film by ion implantation to form a P-type well, removing photoresist, putting the P-type well into a high-temperature furnace for annealing treatment, removing a silicon nitride layer by hot phosphoric acid, doping phosphorus ions to form an N-type well, annealing, removing a SiO2 layer by HF, generating a SiO2 layer by a dry oxidation method, depositing a silicon nitride layer by LPCVD, reserving the silicon nitride layer on the lower gate isolation layer by using a photoetching technology and an ion etching technology, growing a SiO2 layer without the protection of the silicon nitride, and forming an isolation region between PN;
s13, coating: removing silicon nitride by hot phosphoric acid, removing SiO2 at the position of a gate isolation layer by using HF solution, regenerating a SiO2 film with better finished quality as a gate oxide layer, depositing a polycrystalline silicon layer by LPCVD, coating a photoresist for photoetching, coating a plasma etching technology, forming a gate structure, and oxidizing to generate a SiO2 protective layer;
s14, stripping: coating photoresist on the surface, removing the photoresist in the P well region, injecting arsenic ions to form the source and drain of NMOS, injecting B ions to form the source and drain of PMOS in the N well region by the same method, depositing a layer of undoped oxide layer by PECVD, protecting the element, and annealing
S15, cutting and packaging: and cutting the silicon wafer by a laser machine, and then carrying out packaging treatment to manufacture the chip.
Preferably, the static gluing comprises glue dripping, accelerated rotation, glue throwing and solvent volatilization, and the dynamic gluing comprises low-speed rotation, glue dripping, accelerated rotation, glue throwing and solvent volatilization.
Preferably, the contact exposure method directly contacts the photoresist layer through a mask plate, the proximity exposure method slightly separates the mask plate from the photoresist layer by a separation distance of 10-50 μm, and the projection exposure method uses a lens to collect light between the mask plate and the photoresist to realize exposure.
The invention adopts a laser machine cutting mode, is particularly suitable for manufacturing the LED chip structure with high quality requirement, effectively improves the cleavage yield, reduces the leakage reject ratio, improves the overall yield of the product, and improves the luminous efficiency of the chip through the arrangement of the fluorescent powder so as to meet the production requirement.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting diode chip according to the present invention.
In the figure: 1 lens, 2 fixing pieces, 3 mounting seats, 4 chips, 5 mounting tables, 6 gold wires, 7 silica gel, 8 fluorescent powder and 9 lead frames.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples.
Referring to fig. 1, the light emitting diode chip provided by the invention comprises a lens 1, a fixing member 2, a mounting base 3, a chip 4 and a mounting table 5, wherein the mounting table 5 is fixedly connected to the upper side of the mounting base 3, the chip 4 is fixedly connected to the upper side of the mounting table 5, a solder generated by pressure welding is fixedly connected between the mounting table 5 and the chip 4, the fixing member 2 is sleeved on the outer sides of the mounting base 3 and the mounting table 5, the lens 1 is arranged inside the fixing member 2, the lens 1 is fixed by the fixing member 2, the upper side of the mounting table 5 is filled with silica gel 7 wrapping the chip 4, the surface of the silica gel 7 is provided with fluorescent powder 8, the chip 4 is electrically connected with two gold wires 6, the outer side of the fixing member 2 is symmetrically provided with two lead frames 9, the two gold wires 6 are respectively and electrically connected with the two lead frames 9, the fixing member 2 and the mounting base, the fixing member 2 is made of plastic.
The invention also provides a manufacturing method of the light-emitting diode chip, which comprises the following steps:
s1, cleaning and drying: cleaning a silicon wafer by a wet method, washing the silicon wafer by deionized water, dehydrating and baking the silicon wafer, drying the silicon wafer by a hot plate, heating the silicon wafer for 1 to 2 minutes at the temperature of 150 to 250 ℃, and protecting the silicon wafer by nitrogen;
s2, priming: coating the bottom by adopting a hot plate of a gas-phase bottom film, performing HMDS vapor deposition, controlling the temperature to be 200-250 ℃, and processing for 30 seconds;
s3, rotary gluing: a. static gluing and dynamic gluing;
s4, soft baking: drying by a vacuum hot plate, and heating for 30-60 seconds at the temperature of 85-120 ℃;
s5, edge removal: after soft baking, removing an edge solvent by using PGMEA or EGMEA, spraying a small amount of solvent out of the edges of the front and back surfaces, and carefully controlling the solvent not to reach the effective area of the photoresist;
s6, alignment: pre-aligning, namely performing laser automatic alignment through nicks on a silicon wafer;
s7, exposure: contact exposure, proximity exposure, projection exposure;
s8, post-baking: drying by a hot plate, and heating for 1 minute at the temperature of 110-130 ℃;
s9, developing: a silicon wafer immersion type developing method, a continuous spray developing method and a puddle type developing method;
s10, hard baking: drying by a hot plate, and heating for 1-2 minutes at the temperature of 100-130 ℃;
s11, removing silicon nitride: removing the silicon nitride by a dry oxidation method;
s12, ion implantation: injecting boron ions into a substrate through a SiO2 film by ion implantation to form a P-type well, removing photoresist, putting the P-type well into a high-temperature furnace for annealing treatment, removing a silicon nitride layer by hot phosphoric acid, doping phosphorus ions to form an N-type well, annealing, removing a SiO2 layer by HF, generating a SiO2 layer by a dry oxidation method, depositing a silicon nitride layer by LPCVD, reserving the silicon nitride layer on the lower gate isolation layer by using a photoetching technology and an ion etching technology, growing a SiO2 layer without the protection of the silicon nitride, and forming an isolation region between PN;
s13, coating: removing silicon nitride by hot phosphoric acid, removing SiO2 at the position of a gate isolation layer by using HF solution, regenerating a SiO2 film with better finished quality as a gate oxide layer, depositing a polycrystalline silicon layer by LPCVD, coating a photoresist for photoetching, coating a plasma etching technology, forming a gate structure, and oxidizing to generate a SiO2 protective layer;
s14, stripping: coating a photoresist on the surface, removing the photoresist of the P well region, injecting arsenic ions to form a source drain electrode of an NMOS, injecting B ions to form a source drain electrode of a PMOS in the N well region by the same method, depositing a layer of undoped oxide layer by PECVD, protecting an element, and annealing;
s15, cutting and packaging: and cutting the silicon wafer by a laser machine, and then carrying out packaging treatment to manufacture the chip.
Cleaning operations remove surface contaminants (particles, organics, process residues, mobile ions); removing water vapor to change the surface of the substrate from hydrophilic to hydrophobic to enhance the adhesion of the surface.
The priming operation can make the surface hydrophobic and enhance the adhesion between the substrate surface and the photoresist
The static gluing comprises glue dripping, accelerated rotation, glue throwing and solvent volatilization, and the dynamic gluing comprises low-speed rotation (500 revolutions per minute), glue dripping, accelerated rotation (3000 revolutions per minute), glue throwing and solvent volatilization, and the viscosity of the photoresist is reduced, and the thickness of the photoresist is reduced as the viscosity is reduced; the higher the speed, the thinner the thickness; the faster the acceleration, the more uniform the rotation acceleration; in relation to the point in time of the rotational acceleration.
4-7% of the solvent can be removed by soft drying operation, so that the adhesion is enhanced; stress in the photoresist film is released, and the photoresist is prevented from contaminating the equipment.
The contact exposure method is directly contacted with the photoresist layer through the mask plate, the approach exposure method is slightly separated from the photoresist layer through the mask plate, the separation distance is 10-50 mu m, and the projection exposure method is used for realizing exposure by using lens to collect light between the mask plate and the photoresist.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (6)
1. The light-emitting diode chip is characterized by comprising a lens (1), a fixing piece (2), a mounting seat (3), a chip (4) and a mounting table (5), the mounting table (5) is fixedly connected to the upper side of the mounting base (3), the chip (4) is fixedly connected to the upper side of the mounting table (5), the fixing piece (2) is sleeved on the outer sides of the mounting seat (3) and the mounting platform (5), the lens (1) is arranged inside the fixing piece (2), the lens (1) is fixed through the fixing piece (2), the upper side of the mounting table (5) is filled with silica gel (7) wrapping the chip (4), the surface of the silica gel (7) is provided with fluorescent powder (8), the chip (4) is electrically connected with two gold wires (6), the outside symmetry of mounting (2) is provided with two lead frame (9), two gold thread (6) are connected two lead frame (9) electricity respectively.
2. The light-emitting diode chip as claimed in claim 1, characterized in that a solder-tight connection produced by means of pressure welding is provided between the mount (5) and the chip (4).
3. The light emitting diode chip as claimed in claim 1, wherein the fixing member (2) and the mounting base (3) are both circular structures, the mounting platform (5) is located at a middle position of an upper side of the mounting base (3), and the fixing member (2) is made of plastic.
4. The manufacturing method of the light-emitting diode chip is characterized by comprising the following steps of:
s1, cleaning and drying: cleaning a silicon wafer by a wet method, washing the silicon wafer by deionized water, dehydrating and baking the silicon wafer, drying the silicon wafer by a hot plate, heating the silicon wafer for 1 to 2 minutes at the temperature of 150 to 250 ℃, and protecting the silicon wafer by nitrogen;
s2, priming: coating the bottom by adopting a hot plate of a gas-phase bottom film, performing HMDS vapor deposition, controlling the temperature to be 200-250 ℃, and processing for 30 seconds;
s3, rotary gluing: a. static gluing and dynamic gluing;
s4, soft baking: drying by a vacuum hot plate, and heating for 30-60 seconds at the temperature of 85-120 ℃;
s5, edge removal: after soft baking, removing an edge solvent by using PGMEA or EGMEA, spraying a small amount of solvent out of the edges of the front and back surfaces, and carefully controlling the solvent not to reach the effective area of the photoresist;
s6, alignment: pre-aligning, namely performing laser automatic alignment through nicks on a silicon wafer;
s7, exposure: contact exposure, proximity exposure, projection exposure;
s8, post-baking: drying by a hot plate, and heating for 1 minute at the temperature of 110-130 ℃;
s9, developing: a silicon wafer immersion type developing method, a continuous spray developing method and a puddle type developing method;
s10, hard baking: drying by a hot plate, and heating for 1-2 minutes at the temperature of 100-130 ℃;
s11, removing silicon nitride: removing the silicon nitride by a dry oxidation method;
s12, ion implantation: injecting boron ions into a substrate through a SiO2 film by ion implantation to form a P-type well, removing photoresist, putting the P-type well into a high-temperature furnace for annealing treatment, removing a silicon nitride layer by hot phosphoric acid, doping phosphorus ions to form an N-type well, annealing, removing a SiO2 layer by HF, generating a SiO2 layer by a dry oxidation method, depositing a silicon nitride layer by LPCVD, reserving the silicon nitride layer on the lower gate isolation layer by using a photoetching technology and an ion etching technology, growing a SiO2 layer without the protection of the silicon nitride, and forming an isolation region between PN;
s13, coating: removing silicon nitride by hot phosphoric acid, removing SiO2 at the position of a gate isolation layer by using HF solution, regenerating a SiO2 film with better finished quality as a gate oxide layer, depositing a polycrystalline silicon layer by LPCVD, coating a photoresist for photoetching, coating a plasma etching technology, forming a gate structure, and oxidizing to generate a SiO2 protective layer;
s14, stripping: coating a photoresist on the surface, removing the photoresist of the P well region, injecting arsenic ions to form a source drain electrode of an NMOS, injecting B ions to form a source drain electrode of a PMOS in the N well region by the same method, depositing a layer of undoped oxide layer by PECVD, protecting an element, and annealing;
s15, cutting and packaging: and cutting the silicon wafer by a laser machine, and then carrying out packaging treatment to manufacture the chip.
5. The method for manufacturing a light emitting diode chip as claimed in claim 4, wherein the static coating includes dropping, accelerating rotation, spin coating, and volatilizing solvent, and the dynamic coating includes low-speed rotation, dropping, accelerating rotation, spin coating, and volatilizing solvent.
6. The method for manufacturing a light emitting diode chip as claimed in claim 4, wherein the contact exposure method is directly contacting the photoresist layer through a mask, the proximity exposure method is slightly separated from the photoresist layer by a distance of 10-50 μm through the mask, and the projection exposure method is implemented by condensing light between the mask and the photoresist through a lens.
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| CN201911333021.4A CN111048646A (en) | 2019-12-23 | 2019-12-23 | Light emitting diode chip manufacturing method and light emitting diode chip |
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| CN201911333021.4A CN111048646A (en) | 2019-12-23 | 2019-12-23 | Light emitting diode chip manufacturing method and light emitting diode chip |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100960099B1 (en) * | 2009-09-02 | 2010-05-31 | (주)칸델라 | Lens for light emitting diode package |
| CN202084573U (en) * | 2011-02-15 | 2011-12-21 | 晶诚（郑州）科技有限公司 | High-power LED package structure |
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Application publication date: 20200421 |