CN111048633A - Manufacturing method of flip LED chip - Google Patents
Manufacturing method of flip LED chip Download PDFInfo
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- CN111048633A CN111048633A CN201911300430.4A CN201911300430A CN111048633A CN 111048633 A CN111048633 A CN 111048633A CN 201911300430 A CN201911300430 A CN 201911300430A CN 111048633 A CN111048633 A CN 111048633A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000005520 cutting process Methods 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000007771 core particle Substances 0.000 claims abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
- 239000010980 sapphire Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 238000011161 development Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The patent discloses a manufacturing method of a flip LED chip, which comprises the following steps: firstly, manufacturing a flip semiconductor LED chip; step two, carrying out initial cutting on the substrate, and forming a modified region in the middle of the substrate; the modified region comprises a plurality of fracture cracks; coarsening the upper surface of the substrate, and manufacturing a nano pattern on the upper surface of the substrate of the flip LED chip; fourthly, performing secondary cutting on the upper surface of the substrate in a surface cutting mode, and forming a groove on the substrate, wherein the groove depth is close to the position of the modified region; and step five, splitting the chip by using a splitting machine to obtain the single core particles. This patent is through the improvement LED chip luminousness of alligatoring substrate and nanometer pattern to through setting up the quality-improving layer in advance and solve the batch cutting problem of alligatoring and nanometer substrate.
Description
Technical Field
The patent relates to the technical field of semiconductor devices, in particular to a manufacturing method of a flip LED chip.
Background
At present, a high-power high-brightness LED becomes the key point of the development of the LED industry, and is widely applied to indoor and outdoor illumination. Considering that the conductivity of a P-GaN layer of a traditional normally-installed sapphire substrate high-power chip is not high, a semitransparent Ni/Au conducting layer needs to be deposited on the upper surface of a P-type layer to enable current to be distributed more uniformly, a current diffusion layer can absorb a part of light to reduce light efficiency, and meanwhile, the thermal resistance of the chip is high due to the low thermal conductivity of sapphire. In order to overcome the defects, a flip chip is provided. Therefore, light rays emitted by the active region are taken out through the transparent sapphire substrate, the absorption of the current diffusion layer and the electrode to light is eliminated, and the downward part of the light rays is reflected by the reflecting layer and then is emitted upwards, so that the light efficiency is greatly improved. Meanwhile, heat is directly conducted to the substrate through the electrodes, and the heat conducting performance is good.
The semiconductor deep ultraviolet light source has great application value in the fields of illumination, sterilization, medical treatment, printing, biochemical detection, high-density information storage, secret communication and the like. The light-emitting wavelength of the deep ultraviolet LED taking the AlGaN material as the light-emitting region can cover the ultraviolet band of 210-365nm, is an ideal material for realizing the deep ultraviolet LED device product in the band, and has incomparable advantages compared with other traditional ultraviolet light sources. The biggest bottleneck of the deep ultraviolet LED is the luminous efficiency, which is mainly limited by three aspects: (1) injection efficiency, the proportion of carriers that are efficiently injected into the light emitting region; (2) internal quantum efficiency, the proportion of photons generated by recombination of electrons and holes in the light emitting region; (3) light extraction efficiency, the proportion of photons generated in the light emitting region that are available to be extracted from the chip. In the deep ultraviolet band, the efficiency of the three aspects is low. Because the transparent conductive electrode has stronger absorption to deep ultraviolet light, the deep ultraviolet LED mostly adopts a flip-chip packaging mode for emitting light from the substrate surface at present, and the interface of the substrate and air becomes one of the keys influencing the light-emitting efficiency.
Disclosure of Invention
The technical problem to be solved is to provide a manufacturing method of a flip LED chip, and the method aims to improve production efficiency and facilitate cutting when solving the problem of low light emitting efficiency of the flip deep purple LED chip by coarsening and nano patterns. In order to solve the above problem, the patent provides a solution comprising:
a manufacturing method of a flip LED chip is characterized by comprising the following steps: firstly, manufacturing a flip semiconductor LED chip; step two, carrying out initial cutting on the substrate, and forming a modified region in the middle of the substrate; the modified region comprises a plurality of fracture cracks; coarsening the upper surface of the substrate, and manufacturing a nano pattern on the upper surface of the substrate of the flip LED chip; fourthly, performing secondary cutting on the upper surface of the substrate in a surface cutting mode, and forming a groove on the substrate, wherein the groove depth is close to the position of the modified region; and step five, splitting the chip by using a splitting machine to obtain the single core particles.
Preferably, the semiconductor LED chip includes a deep ultraviolet LED chip.
Preferably, the flip-chip LED chip comprises a substrate, an N-type semiconductor layer, a plurality of quantum wells and a P-type semiconductor layer; the N-type semiconductor layer, the multiple quantum wells and the P-type semiconductor layer are sequentially formed below the substrate, so that an N-P-P double heterostructure is formed; the N-type semiconductor layer is connected with the N electrode, and the P-type semiconductor layer is connected with the P electrode.
Preferably, the first step further comprises thinning and polishing the back surface of the substrate; the sapphire substrate is thinned to 100-200 mu m.
Preferably, the first step further comprises polishing the substrate.
Preferably, the nano-scale patterning is performed in the following manner: spin-coating a nano-imprint resist, performing nano-imprint treatment, or spin-coating a photoresist, performing exposure through a nano-scale high-precision exposure machine, and then performing development treatment; carrying out graphical etching on the sapphire substrate after the nanoimprint treatment or the development, wherein the etching mode can be as follows: ICP dry etching and wet etching. And removing the nano-imprint glue by using photoresist stripping liquid, acetone ultrasonic soaking and the like.
According to the scheme, the problems that invisible cutting cannot be carried out after coarsening and surface cutting cannot be cut into too deep can be avoided, the deeper position of the substrate is modified during initial cutting, and then surface cutting is carried out to the modified layer after coarsening, so that a good splitting condition can be provided, and cutting splitting of the coarsened chip can be completed.
Drawings
FIG. 1 is a schematic diagram of a flip chip structure
FIG. 2 is a schematic diagram of a flip chip structure after nano-roughening
Fig. 3, 4, 5 and 6 are flow charts of manufacturing LED chips in this embodiment;
fig. 7, 8, 9, 10 and 11 are flow charts of the division for manufacturing the LED chip in the present embodiment.
Detailed Description
The technical solution described in this patent includes various embodiments and modifications made on the various embodiments. In the present embodiments, these technical solutions are exemplarily set forth by way of the drawings so that the inventive concepts, technical features, effects of the technical features, and the like of the present patent become more apparent from the description of the embodiments. It should be noted, however, that the scope of protection of the patent should obviously not be limited to what is described in the examples, but can be implemented in various ways under the inventive concept of the patent.
In the description of the present embodiment, attention is paid to the following reading references in order to be able to accurately understand the meaning of the words in the present embodiment:
first, in the drawings of the present patent, the same or corresponding elements, layers, etc. will be denoted by the same reference numerals. Therefore, the explanation of the reference numbers or names of elements/layers, etc. that have been presented before may not be repeated later. Also, in the present embodiment, if the terms "first", "second", etc. are used to modify various elements or elements, the terms "first", "second", etc. do not denote any order but merely distinguish the elements or elements from one another. Furthermore, the singular forms "a", "an" and "the" do not refer to only the singular but also the plural unless the context clearly dictates otherwise.
Further, the inclusion or inclusion should be understood to be an open description that does not exclude the presence of other elements on the basis of the elements already described; further, when a layer, region or component is referred to as being "formed on", "disposed on" another layer, region or component, the layer, region or component may be directly or indirectly formed on the other layer, region or component, and similarly, when a relationship between two elements is expressed using terms such as connection, connection or the like, it may be either directly or indirectly connected without particular limitation. The term "and/or" connects two elements in a relational or an inclusive relationship.
In addition, for the purpose of illustrating the technical solution of the present patent, the dimensions of the elements described in the drawings of the present patent do not represent the dimensional proportionality of the actual elements, and particularly, in the microscopic structure related to the present patent, the dimensions, thicknesses, proportions, etc. may be exaggerated or reduced for "convenience of expression.
The specific embodiment provides a manufacturing method of a flip LED chip. The method comprises the following steps:
step one, manufacturing a flip semiconductor LED chip
In this implementation, the flip-chip LED chip includes a substrate 201, an N-type semiconductor layer 202, a multilayer quantum well 203, and a P-type semiconductor layer 204. In general terms, in a flip-chip LED chip, light is emitted from the substrate side, as shown in fig. 1. In fact, the flip chip and the front chip are in opposite relation, and the light rays of the front LED chip are emitted from one side of the electrode.
As shown in fig. 1, in the flip-chip LED chip, the uppermost end of the chip is a substrate layer, and the substrate layer can be made of various substrate materials, such as but not limited to a silicon substrate, a sapphire substrate, a silicon carbide substrate, and the like. In this embodiment, a sapphire substrate is taken as an example to develop a corresponding technical solution to disclose the specific inventive concept of this patent.
An N-type semiconductor layer 202, a plurality of quantum wells 203 and a P-type semiconductor layer 204 are sequentially formed under the substrate, so that an N-P-P double heterostructure is formed. In this configuration, the N-type semiconductor layer 202 may be N-type GaN, and the P-type semiconductor layer 004 may be P-type GaN. The N-type semiconductor layer is connected with an N electrode 206, the P-type semiconductor layer 204 is connected with a P electrode 205, and the connection is preferably direct connection; thus, when the current is applied at N, P poles, the light of the LED chip is emitted upward from the substrate. This forms a typical flip-chip LED chip.
The flip-chip LED chip fabrication process can be implemented in various ways known in the art, including but not limited to MOCVD and the like.
Preferably, the step further comprises thinning and polishing the back surface of the substrate; the sapphire substrate is thinned to 100-200 mu m; and then coarsening the sapphire substrate. The sapphire substrate is thinned to enhance the light extraction efficiency while reducing the difficulty of chip dicing and splitting, which will be developed in detail in the following steps.
Step two, carrying out primary cutting on the substrate to form a modified region in the middle of the substrate
Stealth scribing is a process in which a laser beam of a translucent wavelength is focused within the workpiece material to form a separate starting point modification layer 207. The modified layer is to destroy the substrate structure to form a fragile structure, and the modified layer with enough area can meet the cracking condition.
In this embodiment, the second step is performed after the LED chip is formed, and then the surface of the substrate of the LED chip is relatively smooth, and preferably, the modified layer is formed after the LED chip is polished. At this time, since the upper surface of the substrate is relatively smooth, it is possible to use a laser beam of a translucent wavelength and focus the laser beam inside the workpiece material, thereby forming a modification inside the substrate. The substrate interior refers to the area below the outer surface of the substrate and above the inner surface.
Thirdly, manufacturing nano patterns on the upper surface of the substrate of the flip LED chip
In such a flip LED chip, the interface between the substrate and air becomes one of the keys affecting the light extraction efficiency. The flat light emitting surface has serious total reflection loss, so that the light emitting efficiency of the LED chip is greatly reduced; therefore, in the present embodiment, the problem of the serious reflection loss of the optical facet is overcome by fabricating a nano-pattern on the upper surface of the sapphire substrate, so as to overcome the above-mentioned influence.
The method for manufacturing the nano-scale pattern on the thinned and polished sapphire substrate comprises the following steps: spin-coating a nano-imprint resist, performing nano-imprint treatment, or spin-coating a photoresist, performing exposure through a nano-scale high-precision exposure machine, and then performing development treatment; carrying out graphical etching on the sapphire substrate after the nanoimprint treatment or the development, wherein the etching mode can be as follows: ICP dry etching, wet etching, etching using a gas such as chlorine gas, may also be performed. And removing the nano-imprint glue by using photoresist stripping liquid, acetone ultrasonic soaking and the like.
Step four, after the etching is finished, the second cutting is carried out on the upper surface of the substrate in a surface cutting mode, a groove is formed on the substrate, and the groove depth is close to the position of the modified layer
In this step, the secondary cutting may mainly be performed by laser cutting, and although the laser cutting affects the substrate with a relatively shallow depth, it still can form a trench with a certain depth on the substrate with a roughened surface.
And step five, splitting the chip by using a splitting machine to obtain the single core particles.
In the specific embodiment, the sapphire substrate is roughened, the roughened surface has a strong scattering effect on the emergent light, the random emergence of the light is increased, and the total reflection loss of the emergent light on an emergent interface is reduced through multiple reflections, so that the light extraction efficiency is increased. There are many different types of patterns to be roughened, including hemispherical, pyramidal, trapezoidal, and conical. Through verification, the hemispherical graph has the highest light emitting efficiency, but the process difficulty is extremely high, and the semi-spherical graph is conical. The conical surface can efficiently destroy the scattering of photons, thereby improving the light emitting efficiency, and meanwhile, the LED chip emitting efficiency is the highest when the inclination angle of the cone is 50 degrees through verification.
When the wafer with the roughened substrate is used for cutting a chip, due to the effects of scattering and the like of the roughened nano layer, laser points of invisible cutting by adopting a laser cutting principle cannot enter sapphire, so that the wafer cannot be cut. In view of this problem, in the present embodiment, the initial stealth cutting is performed on the polished wafer, and the initially cut wafer forms a modified layer in the middle of the sapphire substrate, and the process is as shown in fig. 7 and 8; then, patterning and etching the back surface of the wafer, as shown in FIG. 9; after the etching is finished, performing secondary cutting in a surface cutting mode, cutting into an obvious groove from the back, wherein the groove depth is close to the position of the modified layer, as shown in fig. 10; finally, the core particles are obtained by splitting with a splitter, fig. 11.
The main purpose of this is to avoid the problem that the chip can not be cut invisibly after coarsening and the surface cutting can not cut too deeply, and the deeper position of the substrate is modified during initial cutting, and then the surface cutting is carried out to the modified layer after coarsening, so that a good splitting condition can be provided to complete the cutting splitting of the chip after coarsening.
The above is only the preferred technical solution of the present patent. All the technical features of the patent are deleted, substituted or modified under the inventive concept of the present patent. It is intended to cover such departures from the present disclosure as come within the known or customary practice in the art to which this invention pertains.
Claims (6)
1. A manufacturing method of a flip LED chip is characterized by comprising the following steps:
firstly, manufacturing a flip semiconductor LED chip;
step two, carrying out initial cutting on the substrate, and forming a modified region in the middle of the substrate; the modified region comprises a plurality of fracture cracks;
coarsening the upper surface of the substrate, and manufacturing a nano pattern on the upper surface of the substrate of the flip LED chip;
fourthly, performing secondary cutting on the upper surface of the substrate in a surface cutting mode, and forming a groove on the substrate, wherein the groove depth is close to the position of the modified region;
and step five, splitting the chip by using a splitting machine to obtain the single core particles.
2. The method of claim 1, wherein the semiconductor LED chip comprises a deep ultraviolet LED chip.
3. The method of claim 1, wherein the flip-chip LED chip comprises a substrate, an N-type semiconductor layer, a plurality of quantum wells, and a P-type semiconductor layer; the N-type semiconductor layer, the multiple quantum wells and the P-type semiconductor layer are sequentially formed below the substrate, so that an N-P-P double heterostructure is formed; the N-type semiconductor layer is connected to the N-electrode 206 and the P-type semiconductor layer is connected to the P-electrode.
4. The method of claim 1, wherein the first step further comprises thinning and polishing the backside of the substrate; the sapphire substrate is thinned to 100-200 mu m.
5. The method of claim 1, wherein the step one further comprises polishing the substrate.
6. The method of claim 1, wherein the nano-scale patterning is performed by: spin-coating a nano-imprint resist, performing nano-imprint treatment, or spin-coating a photoresist, performing exposure through a nano-scale high-precision exposure machine, and then performing development treatment; carrying out graphical etching on the sapphire substrate after the nanoimprint treatment or the development, wherein the etching mode can be as follows: ICP dry etching, wet etching, etching using a gas such as chlorine gas, may also be performed. And removing the nano-imprint glue by using photoresist stripping liquid, acetone ultrasonic soaking and the like.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911300430.4A CN111048633A (en) | 2019-12-17 | 2019-12-17 | Manufacturing method of flip LED chip |
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| CN201911300430.4A CN111048633A (en) | 2019-12-17 | 2019-12-17 | Manufacturing method of flip LED chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115036213A (en) * | 2022-08-11 | 2022-09-09 | 四川洪芯微科技有限公司 | Wafer cracking device and wafer cracking method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427107A (en) * | 2011-12-09 | 2012-04-25 | 祝进田 | High-power white light-emitting diode (LED) flip chip and manufacturing method thereof |
| US20160243833A1 (en) * | 2015-02-25 | 2016-08-25 | Canon Kabushiki Kaisha | Method for manufacturing semiconductor chip |
| CN107538136A (en) * | 2017-07-31 | 2018-01-05 | 山东浪潮华光光电子股份有限公司 | It is a kind of to utilize the method for being cut by laser sapphire substrate LED chip |
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- 2019-12-17 CN CN201911300430.4A patent/CN111048633A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427107A (en) * | 2011-12-09 | 2012-04-25 | 祝进田 | High-power white light-emitting diode (LED) flip chip and manufacturing method thereof |
| US20160243833A1 (en) * | 2015-02-25 | 2016-08-25 | Canon Kabushiki Kaisha | Method for manufacturing semiconductor chip |
| CN107538136A (en) * | 2017-07-31 | 2018-01-05 | 山东浪潮华光光电子股份有限公司 | It is a kind of to utilize the method for being cut by laser sapphire substrate LED chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115036213A (en) * | 2022-08-11 | 2022-09-09 | 四川洪芯微科技有限公司 | Wafer cracking device and wafer cracking method |
| CN115036213B (en) * | 2022-08-11 | 2023-01-10 | 四川洪芯微科技有限公司 | Wafer cracking device and wafer cracking method |
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Application publication date: 20200421 |