CN111048495A - Light emitting diode display and method of manufacturing the same - Google Patents
Light emitting diode display and method of manufacturing the same Download PDFInfo
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- CN111048495A CN111048495A CN201811183411.3A CN201811183411A CN111048495A CN 111048495 A CN111048495 A CN 111048495A CN 201811183411 A CN201811183411 A CN 201811183411A CN 111048495 A CN111048495 A CN 111048495A
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- 239000002184 metal Substances 0.000 claims description 83
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- 229920005989 resin Polymers 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000011368 organic material Substances 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- 150000003384 small molecules Chemical class 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 9
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a light emitting diode display, which comprises: the LED driving circuit comprises a substrate, a plurality of leads, a plurality of light emitting areas and at least one driving chip. A plurality of conductive lines are formed on the substrate. The light emitting areas comprise light emitting diode areas and virtual areas, the light emitting areas are arranged in a matrix form, and the virtual areas of the light emitting areas correspond to each other. The driving chip can be arranged above the virtual area of the light emitting areas, and can also be arranged above the light emitting areas.
Description
Technical Field
The present invention relates to a light emitting diode display and a method for manufacturing the same, and more particularly, to a passive matrix light emitting diode display in which a driving chip is formed above a light emitting region and a method for manufacturing the same.
Background
As mobile devices become more miniaturized, the space in which the relevant components of the display can be located becomes smaller, and therefore how to make the relevant components of the display more closely configured remains to be solved.
Disclosure of Invention
Technical problem to be solved
In view of the above-mentioned existing problems, it is an object of the present invention to provide a light emitting diode display, so that the relevant components of the display can be more closely arranged.
(II) technical scheme
In order to achieve the above object, the present invention provides a light emitting diode display, comprising: the LED driving circuit comprises a substrate, a plurality of leads, a plurality of light emitting areas and at least one driving chip. A plurality of conductive lines are formed on the substrate. The light emitting areas comprise light emitting diode areas and virtual areas, the light emitting areas are arranged on the conducting wires in a matrix mode, and the virtual areas of the light emitting areas correspond to each other or the light emitting diode areas correspond to each other. The driving chip is disposed above the dummy regions where the light emitting regions correspond to each other. The driving chip may also be disposed above the plurality of light emitting areas, in which case, the dummy areas of the plurality of light emitting areas do not have to be disposed corresponding to each other.
Preferably, when at least one light emitting diode in the light emitting diode region is damaged, at least one light emitting diode functioning normally may be formed in the dummy region.
Preferably, the plurality of light emitting regions may be small molecule organic light guide layers or high molecule organic light guide layers.
Preferably, a photosensitive resin black matrix may be formed between the plurality of light emitting regions.
Preferably, a first metal layer may be formed on the plurality of light emitting regions, and a planarization layer may be formed on the first metal layer.
Preferably, a second metal layer may be formed on the planarization layer, and the driving chip may be disposed on the second metal layer and over the corresponding photosensitive resin black matrix and the dummy region.
Preferably, a protection layer may be further included, the protection layer being formed on the second metal layer, the planarization layer and the driving chip.
Preferably, the planarization layer may be a light guide material having a refractive index greater than 1, and the protective layer may be an opaque organic material.
Preferably, the light emitting diode region may include a plurality of micro light emitting diodes.
Preferably, the plurality of micro light emitting diodes may be flip chip type or vertical type.
Preferably, the plurality of conductive lines, the first metal layer and the second metal layer may be increased in thickness by electroplating to reduce the resistance.
Preferably, the first metal layer may include a plurality of metal lines, and the plurality of metal lines may be electrically connected to each other by a shorting bar.
Preferably, the plurality of wires may be electrically connected to each other by a resistance line.
Preferably, a plurality of tip metal blocks may be disposed beside the plurality of wires.
In addition, the present invention provides a method of manufacturing a light emitting diode display, which includes the steps of: providing a substrate; forming a plurality of wires on the substrate; forming a plurality of luminous areas on the plurality of conducting wires in a matrix arrangement mode, wherein the plurality of luminous areas comprise luminous diode areas and virtual areas; and forming at least one driving chip over the dummy regions corresponding to the plurality of light emitting regions. The driving chip can also be arranged above the light emitting areas, and in this case, the virtual areas of the light emitting areas do not need to be arranged correspondingly.
Preferably, when at least one light emitting diode in the light emitting diode region is damaged, at least one light emitting diode functioning normally may be formed in the dummy region.
Preferably, the plurality of light emitting regions may be small molecule organic light guide layers or high molecule organic light guide layers.
Preferably, a photosensitive resin black matrix may be formed between the plurality of light emitting regions.
Preferably, a first metal layer may be formed on the plurality of light emitting regions, and a planarization layer may be formed on the first metal layer.
Preferably, a second metal layer may be formed on the planarization layer, and a driving chip may be formed on the second metal layer and above the corresponding photosensitive resin black matrix and the dummy region.
Preferably, the method may further include the step of forming a protection layer on the second metal layer, the planarization layer and the driving chip.
Preferably, the protective layer may be an opaque organic material.
Preferably, the planarization layer may be a transparent organic material.
Preferably, the light emitting diode region may include a plurality of micro light emitting diodes.
Preferably, the plurality of micro light emitting diodes may be flip chip type or vertical type.
Preferably, the plurality of conductive lines, the first metal layer and the second metal layer are increased in thickness by electroplating to reduce the impedance.
Preferably, the first metal layer may include a plurality of metal lines, and the plurality of metal lines may be electrically connected to each other by a shorting bar.
Preferably, the plurality of wires may be electrically connected to each other by a resistance line.
Preferably, a plurality of tip metal blocks may be disposed beside the plurality of wires.
(III) advantageous effects
The invention may have one or more of the following advantages:
1. by providing the dummy region, the driving chip can be formed above the light emitting region.
2. With the improvement of welding technology and materials, the driving chip can be arranged on the flat layer and the photosensitive resin black matrix.
3. Since the driving chip can be formed above the corresponding photosensitive resin black matrix and the dummy region, the plurality of light emitting regions can be more closely spaced to each other, thereby shortening the pixel pitch.
4. Since the driving chip can be disposed above the light emitting regions, the relative positions of the light emitting regions and the driving chip can be arbitrarily arranged, and thus the pixel pitch can be further shortened.
Drawings
Fig. 1 is an internal top view of a light emitting diode display according to an embodiment of the present invention.
Fig. 2A is a flow chart of a manufacturing process of a light emitting diode display (flip-chip micro light emitting diode) according to an embodiment of the present invention.
Fig. 2B is a flow chart of a manufacturing process of an led display (flip-chip micro led) according to an embodiment of the present invention.
Fig. 2C is a flow chart of a manufacturing process of an led display (flip-chip micro led) according to an embodiment of the present invention.
Fig. 3A is a flow chart of a method for manufacturing a led display according to another embodiment of the present invention (vertical micro-leds).
Fig. 3B is a flow chart of a process for fabricating a led display according to another embodiment of the present invention (vertical micro-leds).
Fig. 3C is a flow chart of a process for fabricating a led display according to another embodiment of the present invention (vertical micro-leds).
FIG. 4A is a schematic diagram of the present invention with electrostatic protection.
FIG. 4B is a schematic diagram of the present invention with another electrostatic protection.
FIG. 4C is a schematic diagram of the present invention with another electrostatic protection.
Description of the reference numerals
1: substrate
2: conducting wire
21: impedance line
22: tip metal block
23. 24, 25 short-circuit bar (shorting bar)
3: photosensitive resin black matrix
4: luminous zone
41: light emitting diode region
42: virtual zone
5: a first metal layer
51: short-circuit bar
6: planarization layer
7: second metal layer
8: driving chip
9: protective layer
Detailed Description
Advantages, features and technical means of realisation of the present invention will be described in more detail with reference to exemplary embodiments and the accompanying drawings so that the invention may be more easily understood and may be realised in different forms and therefore should not be construed as limited to the embodiments described herein but rather as providing a more complete, complete and complete teaching of the invention concept to be afforded to those skilled in the art and as merely providing for a concise description of the inventive concept, as defined in the appended claims.
One or more embodiments of the present invention described below disclose a light emitting diode display. The led display disclosed in the following embodiments can have the effect of enabling the related components of the display to be more closely arranged.
Referring to fig. 1 to 2C, fig. 1 is a top view of an led display according to an embodiment of the present invention, and fig. 2A to 2C are flow charts of a manufacturing process of an led display according to an embodiment of the present invention (flip-chip micro leds).
As shown in fig. 1 to 2C, the light emitting diode display of the present invention includes: the display device comprises a substrate 1, a plurality of wires 2, a plurality of light emitting areas 4 and at least one driving chip 8. The substrate 1 is selected from any one of the following: a transparent glass substrate or a plastic substrate. The plurality of wires 2 are arranged and formed on the substrate 1, and the material of the plurality of wires 2 is selected from any one of the following materials: indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and metals. The light emitting regions 4 include light emitting diode regions 41 and dummy regions 42, the light emitting regions 4 are arranged on the wires 2 in a matrix form, such that the cathodes and the anodes of the light emitting diodes in the light emitting diode regions 41 are electrically connected to the wires 2, the dummy regions 42 of the light emitting regions 4 correspond to each other or the light emitting diode regions 41 correspond to each other (as shown in fig. 1), the light emitting regions 4 may be small molecule organic light guide layers or polymer organic light guide layers covering the light emitting diodes and the wires 2, and the light emitting diodes may be micro light emitting diodes of a flip chip type (as shown in fig. 2A to 2C) or a vertical type (as shown in fig. 3A to 3C). And the driving chip 8 is formed above the dummy region 42 corresponding to the plurality of light emitting regions 4 (as shown in fig. 1).
In the above, by providing the dummy area 42, the driving chip 8 can be formed above the light emitting area 4, and in the manufacturing process of the display, if the light emitting diode of the light emitting diode area 41 is damaged, the light emitting diode with normal function can be formed in the dummy area 42, so as to prevent the whole display from being unusable due to the damage of a few light emitting diodes.
In addition, referring to the manufacturing flowchart of the led display (flip-chip micro led) according to an embodiment of the present invention, with reference to fig. 2A, first, in step S1, a substrate 1, such as a glass substrate, is provided. In step S2, a plurality of wires 2 are formed on the substrate 1. In step S3, a black matrix 3 (Resin-BM) is formed on the substrate 1 and the plurality of wires 2, and the black matrix 3 has good light shielding performance, high resolution, good uniformity, good heat resistance and chemical resistance. In step S4, a light emitting diode region 41 including a flip-chip micro light emitting diode is formed on the plurality of wires 2, and the cathode and the anode of the flip-chip micro light emitting diode are electrically connected to the plurality of wires 2, respectively. Step S5, light emitting areas 4 (such as transparent small molecule organic light guide layer or polymer organic light guide layer) are formed on the plurality of wires 2 and the flip chip type micro light emitting diode, and the photosensitive resin black matrix 3 separates the plurality of light emitting areas 4 from each other, so as to prevent the light emission of the light emitting areas 4 from affecting the light emission of another light emitting area 4.
Next, referring to fig. 2B, step S6, a contact hole is formed in the photosensitive resin black matrix 3. In step S7, a first metal layer 5 is formed on the photosensitive resin black matrix 3, the light-emitting regions 4 and the contact holes, such that the first metal layer 5 is electrically connected to the wires 2, and the first metal layer 5 may be selected from any one of the following materials: molybdenum (Mo), titanium (Ti), tungsten (W), aluminum (Al), copper (Cu) and composite metal materials thereof. In step S8, a planarization layer 6 is formed on the photosensitive resin black matrix 3 and the first metal layer 5, and the planarization layer 6 is made of a transparent organic material. In step S9, contact holes are formed in the planarization layer 6 and the photosensitive resin black matrix 3.
Next, referring to fig. 2C, in step S10, a second metal layer 7 is formed on the planarization layer 6 and the contact holes in the photosensitive resin black matrix 3, the second metal layer 7 is electrically connected to the plurality of conductive lines 2 and the first metal layer 5, respectively, and the second metal layer 7 may be made of any one of the following materials: molybdenum (Mo), titanium (Ti), tungsten (W), aluminum (Al), copper (Cu) and composite metal materials thereof. In step S11, the driving chip 8 is formed on the second metal layer 7 and corresponding to the photoresist black matrix 3 and the upper portion of the dummy region 42 (as shown in fig. 1), such that the driving chip 8 is electrically connected to the cathode and the anode of the flip-chip micro led to control the operation of the flip-chip micro led. Finally, in step S12, a protection layer 9 is further formed on the second metal layer 7, the planarization layer 6 and the driving chip 8, wherein the protection layer 9 is an opaque organic material to protect the above-mentioned components from contamination, moisture and external light.
Referring to fig. 3A, in a flowchart of manufacturing a light emitting diode display according to another embodiment (vertical micro light emitting diode) of the present invention, first, in step S1-1, a substrate 1, such as a glass substrate, is provided. In step S2-1, a plurality of wires 2 are formed on a substrate 1. In step S3-1, a Black Matrix 3 (Resin-BM) is formed on the substrate 1 and the plurality of wires 2, and the Black Matrix 3 has good light shielding performance, high resolution, good uniformity, good heat resistance and chemical resistance. In step S4-1, the led region 41 including the vertical micro leds is formed on the plurality of wires 2, and either the cathode or the anode of the vertical micro leds is electrically connected to the plurality of wires 2. Step S5-1, light-emitting areas 4 (such as transparent small molecule organic light guide layer or polymer organic light guide layer) are formed on the plurality of wires 2 and the vertical micro light-emitting diode, and the photosensitive resin black matrix 3 separates the plurality of light-emitting areas 4 from each other, so as to prevent the light-emitting areas 4 from emitting light to affect the light-emitting of another light-emitting area 4.
Next, referring to fig. 3B, step S6-1, contact holes are formed in the light emitting region 4. In step S7-1, a first metal layer 5 is formed on the photosensitive resin black matrix 3, the plurality of light-emitting areas 4 and the contact holes, such that the first metal layer 5 is electrically connected to either the cathode or the anode of the vertical micro light-emitting diode, and the first metal layer 5 may be made of any one of the following materials: molybdenum (Mo), titanium (Ti), tungsten (W), aluminum (Al), copper (Cu) and composite metal materials thereof. In step S8-1, a planarization layer 6 is formed on the photosensitive resin black matrix 3 and the first metal layer 5, and the planarization layer 6 is made of a transparent organic material. In step S9-1, contact holes are formed in the planarization layer 6 and the photosensitive resin black matrix 3.
Next, referring to fig. 3C, in step S10-1, a second metal layer 7 is formed in the planarization layer 6 and the contact holes in the photosensitive resin black matrix 3, the second metal layer 7 is electrically connected to the plurality of conductive lines 2 and the first metal layer 5, respectively, and the second metal layer 7 may be made of any one of the following materials: molybdenum (Mo), titanium (Ti), tungsten (W), aluminum (Al), copper (Cu) and composite metal materials thereof. In step S11-1, the driving chip 8 is formed on the second metal layer 7 and above the photoresist black matrix 3 and the dummy region 42 (as shown in fig. 1), such that the driving chip 8 is electrically connected to the cathode and the anode of the vertical micro light emitting diode to control the operation of the vertical micro light emitting diode. Finally, in step S12-1, a protection layer 9 is further formed on the second metal layer 7, the planarization layer 6 and the driver chip 8, wherein the protection layer 9 is an opaque organic material to protect the above components from contamination, moisture and external light.
In addition, the plurality of wires 2, the first metal layer 5 and the second metal layer 7 on the substrate 1 of the invention can be increased in thickness by electroplating (electroplating) according to actual product requirements, so as to reduce the impedance.
In addition, the electroplating method may generate unexpected high-voltage static electricity to floating metal which is not electrically connected, and damage the product, and the invention provides the following scheme to protect the circuit:
referring to fig. 4A, in detail, the first metal layer 5 of the present embodiment includes a plurality of metal lines, and the plurality of metal lines are electrically connected to each other by a Shorting bar (Shorting bar)51, so that the plurality of metal lines of the first metal layer 5 are maintained at an equal potential. Similarly, the plurality of wires 2 may be grouped and electrically connected to each other by the shorting bars 23, 24, and 25 to maintain the respective potentials of the metal lines in each group, and then the occurrence of the damage caused by the high-voltage static electricity between the first metal layer 5 and all the vertical and horizontal multi-metal lines of the plurality of wires 2 can be effectively reduced as long as the shorting bars 51, 23, 24, and 25 are maintained without a large potential difference. After the electroplating process is completed, all the metal lines can be restored to the independent operation state by removing the shorting bars 51, 23, 24, and 25.
Referring to fig. 4B, the conductive wires 2 are electrically connected to each other by the impedance wires 21, and the impedance wires 21 have a slender structure to generate a high impedance effect, so that once a voltage difference is generated between the conductive wires 2 instantaneously, the voltage difference can be eliminated through the impedance wires 21 without affecting the independent operation of the conductive wires 2 due to the existence of the impedance wires 21. It is possible to provide an electrostatic protection effect to the plurality of wires 2.
Referring to fig. 4C, a plurality of metal blocks 22 having sharp tips are disposed beside the plurality of wires 2, and by using the principle of tip discharge, the sharper metal tips have a stronger electric field, which is more likely to induce a discharge effect, so that static charges accumulated on the metal wires 2 can be effectively consumed, thereby reducing damage caused by high static voltages. In addition, the distance between the plurality of tip metal blocks 22 and the plurality of wires 2 may also adjust the condition of the occurrence of the tip discharge effect, and the closer the distance is, the more the tip discharge effect is likely to occur, so that the designer may improve the electrostatic protection effect by adjusting the time and the condition of the occurrence of the tip discharge effect.
In summary, the driving chip can be formed above the light emitting area by arranging the dummy area. In addition, with the improvement of the soldering technique and materials, the driving chip can be disposed on the photosensitive resin black matrix or the organic material. In addition, since the driving chip can be formed above the corresponding photosensitive resin black matrix and the dummy region, the plurality of light emitting regions can be more closely spaced to each other, thereby shortening the pixel pitch. And, through setting up the black matrix of photosensitive resin among a plurality of luminescent regions, avoid the luminescence of luminescent region to influence the luminescence of another luminescent region. In addition, a protective layer is formed on the second metal layer, the flat layer and the driving chip to protect the internal components from being polluted, damp and irradiated by external light. Finally, in the manufacturing process of the display, if the light emitting diode in the light emitting diode area is damaged, the light emitting diode with normal function can be formed in the virtual area, so that the phenomenon that the whole display cannot be used due to the damage of a few light emitting diodes is avoided.
The above-mentioned embodiments are only for illustrating the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the same, and the scope of the present invention should not be limited by the above-mentioned embodiments, that is, all equivalent changes or modifications made according to the ideas of the present invention should be included in the claims of the present invention.
Claims (32)
1. A light emitting diode display, comprising:
a substrate;
a plurality of conductive lines formed on the substrate;
a plurality of light emitting areas including light emitting diode areas and dummy areas, the light emitting areas being arranged on the plurality of wires in a matrix form, the dummy areas of the light emitting areas corresponding to each other or the light emitting diode areas corresponding to each other; and
and a driving chip formed above the dummy region corresponding to the light emitting regions.
2. The LED display of claim 1, wherein when at least one LED in the LED area is damaged, the at least one LED is formed in the dummy area to function normally.
3. The light-emitting diode display defined in claim 1 wherein the light-emitting regions are small-molecule organic light-guiding layers or high-molecule organic light-guiding layers.
4. The light-emitting diode display according to claim 1, wherein a photosensitive resin black matrix is formed between the plurality of light-emitting areas.
5. The light-emitting diode display defined in claim 4 wherein a first metal layer is formed over the plurality of light-emitting areas and a planar layer is formed over the first metal layer.
6. The light-emitting diode display defined in claim 5 wherein a second metal layer is formed on the planarization layer, the driver chips being formed on the second metal layer and corresponding over the photosensitive resin black matrix and the dummy areas.
7. The light-emitting diode display defined in claim 6 further comprising a protective layer formed over the second metal layer, the planar layer and the drive chip.
8. The light-emitting diode display defined in claim 7 wherein the protective layer is an opaque organic material.
9. The light-emitting diode display defined in claim 7 wherein the planar layer is a transparent organic material.
10. The light-emitting diode display defined in claim 1 wherein the light-emitting diode region contains a plurality of micro light-emitting diodes.
11. The led display according to claim 10 wherein said plurality of micro-leds are flip-chip or vertical.
12. The light-emitting diode display defined in claim 6 wherein the plurality of conductive lines, the first metal layer and the second metal layer are increased in thickness by electroplating to reduce impedance.
13. The light-emitting diode display defined in claim 6 wherein the first metal layer comprises a plurality of metal lines electrically connected to each other by shorting bars.
14. The light-emitting diode display defined in claim 6 wherein the plurality of wires are electrically connected to each other by impedance lines.
15. The light-emitting diode display defined in claim 6 wherein a plurality of pointed metal bumps are disposed adjacent the plurality of wires.
16. A light emitting diode display, comprising:
a substrate;
a plurality of conductive lines formed on the substrate;
a plurality of light emitting areas including light emitting diode areas and dummy areas, the light emitting areas being arranged in a matrix on the plurality of wires; and
and the driving chip is formed above the plurality of light emitting areas.
17. A method of manufacturing a light emitting diode display comprising the steps of:
providing a substrate;
forming a plurality of wires on the substrate;
forming a plurality of light emitting areas on the plurality of wires in a matrix arrangement, wherein the plurality of light emitting areas comprise light emitting diode areas and virtual areas; and
and forming a driving chip above the dummy region corresponding to the light emitting regions.
18. The method of claim 17, wherein when at least one LED in the LED region is damaged, forming the at least one normally functioning LED in the dummy region.
19. The method of claim 17, wherein the plurality of light emitting areas are small molecule organic light guiding layers or polymer organic light guiding layers.
20. The method of claim 17, wherein a black matrix of photosensitive resin is formed between the light emitting areas.
21. The method of claim 20, wherein a first metal layer is formed over the plurality of light emitting regions, and a planarization layer is formed over the first metal layer.
22. The method of claim 21, wherein a second metal layer is formed on the planarization layer, and the driving chip is formed on the second metal layer and above the black matrix and the dummy region.
23. The method of claim 22, further comprising the step of forming a protection layer on the second metal layer, the planarization layer and the driver chip.
24. The method of claim 23, wherein the protective layer is an opaque organic material.
25. The method of claim 23, wherein the planarization layer is a transparent organic material.
26. The method of claim 17, wherein the led region comprises a plurality of micro-leds.
27. The method of claim 26, wherein the micro-leds are flip-chip or vertical.
28. The method of claim 22, wherein the conductive lines, the first metal layer and the second metal layer are increased in thickness by electroplating to reduce impedance.
29. The method of claim 22, wherein the first metal layer comprises a plurality of metal lines electrically connected to each other by shorting bars.
30. The method of claim 22, wherein the plurality of wires are electrically connected to each other by a resistive wire.
31. The method of claim 22, wherein a plurality of tip metal blocks are disposed adjacent the plurality of wires.
32. A method of manufacturing a light emitting diode display comprising the steps of:
providing a substrate;
forming a plurality of wires on the substrate;
forming a plurality of light emitting areas on the plurality of wires in a matrix arrangement, wherein the plurality of light emitting areas comprise light emitting diode areas and virtual areas; and
and forming a driving chip corresponding to the upper parts of the light emitting areas.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768590A (en) * | 2020-12-30 | 2021-05-07 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166013A (en) * | 1996-04-29 | 1997-11-26 | 摩托罗拉公司 | Integrated electro-optical package and method of fabrication |
| CN1851901A (en) * | 2006-04-28 | 2006-10-25 | 友达光电股份有限公司 | Method for making organic light-emitting-diode panel |
| CN101501743A (en) * | 2006-08-11 | 2009-08-05 | 夏普株式会社 | Display apparatus and electronic apparatus with the same |
| CN105793795A (en) * | 2013-12-17 | 2016-07-20 | 勒克斯维科技公司 | Display module and system applications |
| CN107871454A (en) * | 2016-09-26 | 2018-04-03 | 启端光电股份有限公司 | micro light emitting diode display panel |
-
2018
- 2018-10-11 CN CN201811183411.3A patent/CN111048495B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1166013A (en) * | 1996-04-29 | 1997-11-26 | 摩托罗拉公司 | Integrated electro-optical package and method of fabrication |
| CN1851901A (en) * | 2006-04-28 | 2006-10-25 | 友达光电股份有限公司 | Method for making organic light-emitting-diode panel |
| CN101501743A (en) * | 2006-08-11 | 2009-08-05 | 夏普株式会社 | Display apparatus and electronic apparatus with the same |
| CN105793795A (en) * | 2013-12-17 | 2016-07-20 | 勒克斯维科技公司 | Display module and system applications |
| CN107871454A (en) * | 2016-09-26 | 2018-04-03 | 启端光电股份有限公司 | micro light emitting diode display panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768590A (en) * | 2020-12-30 | 2021-05-07 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
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|---|---|
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