CN110993807B - Organic light-emitting diode, preparation method and display device - Google Patents
Organic light-emitting diode, preparation method and display device Download PDFInfo
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- CN110993807B CN110993807B CN201911092407.0A CN201911092407A CN110993807B CN 110993807 B CN110993807 B CN 110993807B CN 201911092407 A CN201911092407 A CN 201911092407A CN 110993807 B CN110993807 B CN 110993807B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Abstract
The application discloses an organic light emitting diode, a preparation method and a display device, wherein the organic light emitting diode comprises: a substrate; the pixel definition layer is arranged on the substrate and comprises a plurality of isolation columns arranged at intervals, and pixel pits are formed between every two adjacent isolation columns; the organic functional layer is arranged in the pixel pit and comprises an anode, a hole injection layer, a hole transmission layer and an organic light emitting layer which are sequentially arranged; and the hole injection layer comprises a hole capture material, and the content of the hole capture material close to the isolation column is greater than the average content of the hole capture material in the hole injection layer. Through the mode, the leakage current of the organic light emitting diode can be reduced, and the display effect of the display device is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to an organic light emitting diode, a preparation method and a display device.
Background
An Organic Light-Emitting Diode (OLED) has a structure in which an Organic functional layer is sandwiched between positive and negative electrodes, and positive and negative electrons can emit Light when they meet in an Organic Light-Emitting layer in the Organic functional layer. The display device has the advantages of simple structure, low cost, good display effect and wide application prospect. In the process of producing OLEDs, the inkjet printing color patterning technology is gradually identified as a mainstream technology in the field of flat panel displays, and has significant advantages in saving raw materials and reducing costs, and the development trend and achievement level thereof have attracted great attention in the industry.
In the prior art, when a film layer is generated through ink-jet printing, after a liquid drop is paved in a pixel pit, a drying film-forming process can be explained by a coffee ring effect, wherein when the liquid drop is spread on a substrate, surface defects and the like can cause the 'pinning' effect of a solute at a contact line, the liquid drop can continuously keep the spreading shape, and the volatilization speed of the solvent at the contact line is high, so that the solvent volatilized from the middle part of the liquid drop is transferred to the edge of the liquid drop to compensate, and finally the solute is deposited on the substrate to form an uneven film with thick edge and thin middle, namely a coffee ring. Under the influence of the coffee ring effect, the film surface in the OLED device structure prepared by ink-jet printing can generate obvious accumulation along the pixel limiting layer, so that the overall leakage current of the device is larger, and the overall effect of the device is further influenced.
Therefore, the prior art is in need of further improvement.
Disclosure of Invention
The invention provides an organic light emitting diode, a preparation method and a display device, which can solve the problems of large leakage current and poor display effect of the organic light emitting diode prepared by the existing ink-jet printing mode.
In order to solve the technical problems, the invention adopts a technical scheme that: an organic light emitting diode is provided.
The organic light emitting diode includes:
a substrate;
the pixel definition layer is arranged on the substrate and comprises a plurality of isolation columns arranged at intervals, and pixel pits are formed between every two adjacent isolation columns;
the organic functional layer is arranged in the pixel pit and comprises an anode, a hole transfer injection layer, a hole transfer layer and an organic light emitting layer which are sequentially arranged;
and the hole injection layer comprises a hole capture material, and the content of the hole capture material close to the isolation column is greater than the average content of the hole capture material in the hole injection layer.
Wherein the contact surface of the isolation column and the organic functional layer contains a fluorine-containing material.
Wherein the mass fraction of the hole-trapping material in the hole injection layer is 0.01-5%.
Wherein the hole-trapping material comprises:
perylene bisimide derivatives.
Wherein, the structural formula of the perylene imide derivative is as follows:
wherein R comprises an alkyl chain with the carbon number less than 12.
The organic functional layer further comprises an electron transport layer, an electron injection layer and a cathode which are sequentially arranged on the organic light-emitting layer.
Wherein the organic functional layer is formed by adopting an ink-jet printing mode.
In order to solve the technical problems, the invention adopts a technical scheme that: a display device is provided.
Wherein the display device includes the organic light emitting diode.
In order to solve the technical problems, the invention adopts a technical scheme that: a method for fabricating an organic light emitting diode is provided.
Wherein the method comprises the following steps:
providing a substrate;
forming a pixel definition layer on the substrate, wherein the pixel definition layer comprises a plurality of isolation columns arranged at intervals, and pixel pits are formed between every two adjacent isolation columns;
sequentially forming an anode, a hole injection layer, a hole transport layer and an organic light emitting layer in the pixel pit;
and the hole injection layer ink comprises a hole capture material, and the content of the hole capture material close to the isolation column is greater than the average content of the hole capture material in the hole injection layer.
Wherein the method further comprises:
mixing the hole capture material with the hole injection layer body material to obtain the hole injection layer ink;
and depositing the hole injection layer ink in the pixel pits to obtain the hole injection layer.
The beneficial effect of this application is:
different from the prior art, the hole capture material is added into the hole injection layer to capture a small amount of holes injected through the anode, and the hole capture material is distributed more at the film layer gathering position of the organic light emitting layer, so that the leakage current of the corresponding organic light emitting diode can be effectively reduced, and the display effect of the display device is improved.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of an organic light emitting diode of the present application;
FIG. 2 is a schematic structural diagram of another embodiment of an organic light emitting diode of the present application;
FIG. 3 is a schematic structural diagram of an embodiment of a display device according to the present application;
FIG. 4 is a schematic flow chart diagram illustrating one embodiment of a method for fabricating an organic light emitting diode according to the present application;
fig. 5 is a flowchart of an embodiment of step S300 in the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of an organic light emitting diode according to the present application, where the organic light emitting diode includes:
a substrate 100; a pixel defining layer 200 disposed on the substrate 100 and including a plurality of isolation pillars 210 disposed at intervals, wherein a pixel pit (not labeled) is formed between adjacent isolation pillars 210; an organic functional layer 300 disposed in the pixel pit and including an anode 310, a hole injection layer 320, a hole transport layer 330, and an organic light emitting layer 340 sequentially disposed; the hole injection layer 320 includes a hole trapping material (not shown), and the content of the hole trapping material near the isolation pillars 210 is greater than the average content of the hole trapping material in the hole injection layer 320.
In this embodiment, a hole trapping material is added to the hole injection layer 320 to trap a small amount of holes injected through the anode 310, and the hole trapping material is distributed more at the position where the film layer of the organic light emitting layer 340 is gathered, so that the leakage current corresponding to the organic light emitting diode can be effectively reduced, and the display effect of the display device can be further improved.
Specifically, the substrate 100 is used for supporting other structures on the organic light emitting diode. The material of the substrate 100 may be determined according to actual conditions, and may be a glass substrate or a polymer substrate. Especially when the led is a flexible led, the substrate 100 may be a PVC substrate.
The isolation pillars 210 are used to separate adjacent pixels from each other and avoid crosstalk, and the material of the isolation pillars 210 includes an organic polymer, such as Polyimide (PI). The anode 310 is used for providing a cavity, the anode 310 is made of different materials according to the light emitting direction of the organic light emitting diode, and when the organic light emitting diode is a bottom light emitting organic light emitting diode, the anode 310 is a transparent anode and can be obtained by etching an ITO glass substrate. When the organic light emitting diode is a top emission organic light emitting diode, the anode 310 is a reflective anode, such as an emitting anode formed of metal titanium or a reflective anode formed of metal silver or the like.
The organic light emitting layer 340 can be deposited by spin coating, vacuum evaporation or ink jet printing. Since the inkjet printing can avoid contact contamination of the functional solution and greatly save expensive pigments for preparing the organic light emitting layer 340, the organic light emitting layer 340 is formed by inkjet printing, that is, red, green and blue pixels are formed in the pixel pits by inkjet printing. Due to the coffee ring effect in the inkjet printing film forming process, the film surface is obviously accumulated on the isolation column 210, and the leakage current is large. Correspondingly, the hole trapping material is doped in the hole injection layer 320, and more hole trapping material is doped at the position of the isolation column 210, so that interaction can be generated between the hole trapping material and a film layer (organic light emitting layer) gathered at the position of the isolation column 210, leakage current is reduced to a certain extent, and display effect is improved.
In one embodiment, in order to make the concentration distribution of the hole trapping material in the hole injection layer 320 correspond to the distribution of the thickness of the film layer in the organic light emitting layer 340, that is, to distribute more hole trapping material near the isolation pillars 210, the contact surface between the isolation pillars 210 and the organic functional layer 300 is made of a fluorine-containing material. This is because the hole-trapping material has a strong intermolecular hydrogen bonding effect, and can generate an intermolecular force with a fluorine-containing material, so that the hole-trapping material is more accumulated near the pillars 210, and further interacts with the organic light-emitting layer 300 accumulated at the pillars 210 during use to reduce leakage current, thereby improving display effect.
Further, in order to effectively trap the holes injected from the anode 310 and reduce leakage current, and simultaneously avoid affecting the display performance of the organic light emitting diode, the content of the hole trapping material in the hole injection layer 320 needs to be controlled. In one embodiment, the mass fraction of the hole trapping material in the hole injection layer 320 is 0.01-5%. Since the hole-trapping material is not uniformly distributed in the hole injection layer 320, that is, the average content of the hole-trapping material in the hole injection layer 320 is 0.01 to 5%, for example, 0.01%, 0.1%, 0.5%, 1%, 3%, or 5%.
In one embodiment, the hole-trapping material comprises: perylene bisimide derivatives. The thermal decomposition temperature of the perylene imide derivative can reach more than 400 ℃, so that the perylene imide derivative has good thermal stability, and the effect of capturing holes due to decomposition or volatilization in the film forming and baking process of the hole injection layer 320 can be avoided. Meanwhile, the perylene bisimide derivative is an electron-rich group and can effectively capture holes. In addition, the amide group in the perylene bisimide organism has a strong hydrogen bonding effect, and is easy to generate intermolecular interaction with fluorine atoms contained on the surface of the isolation column 210, so that more hole capture materials are gathered at the gathering position of the organic light-emitting layer 340, and the effects of reducing leakage current and improving the display effect are achieved.
Further, the structural formula of the perylene bisimide derivative is as follows:
wherein R comprises an alkyl chain with the carbon number less than 12.
In this embodiment, since the hole injection layer 320 is formed by spin coating, vacuum evaporation, inkjet printing, or the like, it is necessary to blend the hole trapping material in the ink of the hole injection layer 320. When R comprises an alkyl chain with the carbon number less than 12, the solubility of the perylene imide derivative can be effectively improved. Further, in order to sufficiently dissolve the perylene imide derivative in the ink of the hole injection layer 320, R is a tert-butyl group. Of course, R may be selected according to the properties of the ink of the hole injection layer 320 and the environment of use, and is not particularly limited as long as the perylene imide derivative can increase the solubility in the ink of the hole injection layer 320.
Further, referring to fig. 2, fig. 2 is a schematic structural diagram of another embodiment of an organic light emitting diode according to the present application, in which the organic functional layer 300 includes, in addition to the anode 310, the hole injection layer 320 and the hole transport layer 330, an electron transport layer 350, an electron injection layer 360 and a cathode 370, which are sequentially disposed on the organic light emitting layer 340. The organic light emitting diode emits light by emitting photons in a de-excitation process of excitons formed by combination of electrons and holes in the organic functional layer 300 under the driving of an external voltage. It is considered that the cathode 370 serves to generate electrons, reaches the organic light emitting layer 340 through the electron injection layer 360 and the electron transport layer 350, and combines with holes from the anode 310 in the organic light emitting layer 340 to emit light, according to the understanding of the above light emitting principle.
In order to solve the technical problems, the invention adopts a technical scheme that: a display device is provided.
Referring to fig. 3, fig. 3 is a schematic structural diagram of an embodiment of a display device according to the present application, wherein the display device 1000 includes the organic light emitting diode 1. The display device 1000 includes a fixed display device and a mobile display device. Including but not limited to televisions, desktop monitors, and the like, especially large-sized (over 65 inches) stationary display devices. The mobile display device includes, but is not limited to, a mobile phone, a tablet computer, a smart watch, VR glasses, and the like.
In order to solve the technical problems, the invention adopts a technical scheme that: a method for fabricating an organic light emitting diode is provided.
Referring to fig. 4, fig. 4 is a schematic flow chart illustrating a method for manufacturing an organic light emitting diode according to an embodiment of the present invention, wherein the method includes the steps of:
s100, providing a substrate.
S200, forming a pixel definition layer on the substrate, wherein the pixel definition layer comprises a plurality of isolation columns arranged at intervals, and pixel pits are formed between every two adjacent isolation columns.
S300, sequentially forming an anode, a hole injection layer, a hole transport layer and an organic light-emitting layer in the pixel pit; and the hole injection layer ink comprises a hole capture material, and the content of the hole capture material close to the isolation column is greater than the average content of the hole capture material in the hole injection layer.
In this embodiment, a hole trapping material is added to the hole injection layer to trap a small amount of holes injected through the anode, and the hole trapping material is distributed more at the position where the film layer of the organic light emitting layer is gathered, so that leakage current of the corresponding organic light emitting diode can be effectively reduced, and the display effect of the display device is further improved.
Specifically, the detailed schemes and the corresponding technical effects of the foregoing embodiments have been explained in detail in the foregoing, and are not described again here.
Further, referring to fig. 5, fig. 5 is a flowchart illustrating an embodiment of the step S300, where the method includes the steps of:
s310, mixing the hole capture material with the body material of the hole injection layer to obtain the hole injection layer ink.
In the step S310, since the hole-trapping material is selected to have solubility, it can be dissolved in an organic solvent; and in order to enable the hole capture material to fully play a role in capturing holes, the hole injection layer ink is obtained by doping the hole capture material into the bulk material of the hole injection layer.
And S320, depositing the hole injection layer ink in the pixel pits to obtain the hole injection layer.
In step S320, the hole injection layer ink is deposited in the pixel pits by spin coating, vacuum evaporation, inkjet printing, or the like, so as to form a hole injection layer. In one embodiment, since the organic light emitting layer is formed by inkjet printing, in order to improve the continuity of the organic light emitting diode manufacturing process and further improve the quality of the film layer, the hole injection layer is formed by inkjet printing. Further, in order to shorten the film formation time, inkjet printing is performed using a plurality of heads, such as 128 or 256 ejection ports.
To sum up, this application is in add the hole capture material in the hole injection layer to the capture passes through a small amount of holes of anode injection, and make the hole capture material is in the film layer of organic light emitting layer gathers punishment and distributes more, can effectively reduce the leakage current that corresponds organic light emitting diode, and then improves display device's display effect.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (8)
1. An organic light emitting diode, comprising:
a substrate;
the pixel definition layer is arranged on the substrate and comprises a plurality of isolation columns arranged at intervals, and pixel pits are formed between every two adjacent isolation columns;
the organic functional layer is arranged in the pixel pit and comprises an anode, a hole injection layer, a hole transmission layer and an organic light emitting layer which are sequentially arranged;
the hole injection layer comprises a hole capture material, and the content of the hole capture material close to the isolation column is larger than the average content of the hole capture material in the hole injection layer;
wherein the contact surface of the isolation column and the organic functional layer is made of fluorine-containing material,
the hole trapping material comprises perylene bisimide derivatives.
2. The organic light-emitting diode according to claim 1, wherein the mass fraction of the hole-trapping material in the hole injection layer is 0.01 to 5%.
3. The organic light-emitting diode of claim 1, wherein the perylene imide derivative has the formula:
wherein R comprises an alkyl chain with the carbon number less than 12.
4. The organic light emitting diode according to claim 1, wherein the organic functional layer further comprises an electron transport layer, an electron injection layer and a cathode which are sequentially disposed on the organic light emitting layer.
5. The organic light emitting diode according to claim 1, wherein the organic functional layer is formed by inkjet printing.
6. A display device characterized in that the display device comprises the organic light emitting diode according to any one of claims 1 to 5.
7. A method of fabricating an organic light emitting diode, the method comprising:
providing a substrate;
forming a pixel definition layer on the substrate, wherein the pixel definition layer comprises a plurality of isolation columns arranged at intervals, and pixel pits are formed between every two adjacent isolation columns;
sequentially forming an anode, a hole injection layer, a hole transport layer and an organic light emitting layer in the pixel pit;
the hole injection layer ink comprises a hole capture material, and the content of the hole capture material close to the isolation column is larger than the average content of the hole capture material in the hole injection layer;
wherein the contact surface of the isolation column and the organic functional layer is made of fluorine-containing material,
the hole trapping material comprises perylene bisimide derivatives.
8. The method of claim 7, wherein the method further comprises:
mixing the hole capture material with the bulk material of the hole injection layer to obtain the hole injection layer ink;
and depositing the hole injection layer ink in the pixel pits to obtain the hole injection layer.
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| CN101543135A (en) * | 2007-05-31 | 2009-09-23 | 松下电器产业株式会社 | Organic El device and method for manufacturing the same |
| KR20120039425A (en) * | 2010-10-15 | 2012-04-25 | 엘지디스플레이 주식회사 | Organic electroluminescent display device |
| CN106848084A (en) * | 2017-03-31 | 2017-06-13 | 上海天马有机发光显示技术有限公司 | A kind of OLED display panel, preparation method and the electronic equipment containing it |
| JP2018190551A (en) * | 2017-04-28 | 2018-11-29 | キヤノン株式会社 | Organic light emitting device, imaging device, and method of manufacturing organic light emitting device |
| CN109166975A (en) * | 2018-07-27 | 2019-01-08 | 深圳市华星光电技术有限公司 | OLED display device and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2014150057A (en) * | 2013-01-11 | 2014-08-21 | Canon Inc | Organic light emitting device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101543135A (en) * | 2007-05-31 | 2009-09-23 | 松下电器产业株式会社 | Organic El device and method for manufacturing the same |
| KR20120039425A (en) * | 2010-10-15 | 2012-04-25 | 엘지디스플레이 주식회사 | Organic electroluminescent display device |
| CN106848084A (en) * | 2017-03-31 | 2017-06-13 | 上海天马有机发光显示技术有限公司 | A kind of OLED display panel, preparation method and the electronic equipment containing it |
| JP2018190551A (en) * | 2017-04-28 | 2018-11-29 | キヤノン株式会社 | Organic light emitting device, imaging device, and method of manufacturing organic light emitting device |
| CN109166975A (en) * | 2018-07-27 | 2019-01-08 | 深圳市华星光电技术有限公司 | OLED display device and display device |
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