CN110993519A - 芯片绑定方法 - Google Patents

芯片绑定方法 Download PDF

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CN110993519A
CN110993519A CN201911149939.3A CN201911149939A CN110993519A CN 110993519 A CN110993519 A CN 110993519A CN 201911149939 A CN201911149939 A CN 201911149939A CN 110993519 A CN110993519 A CN 110993519A
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electrode
light
chip
film layer
substrate
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CN110993519B (zh
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***
孙海威
汤振兴
曲峰
刘静
刘超
汪楚航
崔强伟
孟柯
龚林辉
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US16/830,834 priority patent/US11239198B2/en
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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Abstract

本申请提供一种芯片绑定方法。所述芯片绑定方法用于将芯片绑定在显示模组上，所述显示模组包括基板及位于所述基板上的功能层，所述基板包括第一板部与第二板部，所述功能层位于所述第一板部上，所述第二板部上侧设有电极。所述芯片绑定方法包括：在所述第二板部背离所述电极的一侧形成吸光膜层；在所述电极上涂覆异方性导电胶膜，并将所述芯片放置于所述异方性导电胶膜上；开启位于所述基板下方的激光器，所述激光器产生的激光束部分被所述吸光膜层吸收，部分穿过所述基板对所述异方性导电胶膜进行加热；采用压头向下按压所述芯片，以使所述芯片通过所述异方性导电胶膜与所述电极连通。

Description

芯片绑定方法
技术领域
本申请涉及显示技术领域，特别涉及一种芯片绑定方法。
背景技术
显示装置的芯片一般采用COG(chip on glass，芯片绑定在玻璃基板)技术封装芯片。具体地，玻璃基板上设有电极，芯片通过电极上涂覆的各向异性导电胶与电极压接连通。
采用COG技术将芯片绑定在玻璃基板的工艺过程中，由于芯片与基板的热膨胀系数不同，会出现玻璃基板及芯片翘曲变形的问题，玻璃基板的翘曲变形延伸至显示区，导致显示区靠近芯片的区域漏光，显示面板出现COG Mura现象(芯片绑定导致显示面板的显示亮度及颜色变化的现象)，影响显示面板的显示效果。
发明内容
本申请实施例提供了一种芯片绑定方法，所述芯片绑定方法用于将芯片绑定在显示模组上，所述显示模组包括基板及位于所述基板上的功能层，所述基板包括第一板部与第二板部，所述功能层位于所述第一板部上，所述第二板部上侧设有电极；所述芯片绑定方法包括：
在所述第二板部背离所述电极的一侧形成吸光膜层；
在所述电极上涂覆异方性导电胶膜，并将所述芯片放置于所述异方性导电胶膜上；
开启位于所述基板下方的激光器，所述激光器产生的激光束部分被所述吸光膜层吸收，部分穿过所述基板对所述异方性导电胶膜进行加热；
采用压头向下按压所述芯片，以使所述芯片通过所述异方性导电胶膜与所述电极连通。
在一个实施例中，所述第二板部包括设有所述电极的电极区及未设所述电极的***区，所述吸光膜层覆盖所述***区且未覆盖所述电极区。
在一个实施例中，所述在所述基板背离所述电极的一侧形成吸光膜层，包括：
在所述第二板部背离所述电极的一侧形成吸光材料层，所述吸光材料层覆盖所述电极区及所述***区；
对所述吸光材料层进行图形化，将所述电极区覆盖的所述吸光材料层去除。
在一个实施例中，所述在所述第二板部背离所述电极的一侧形成吸光膜层，包括：
在所述第二板部背离所述电极的一侧贴附遮挡层，所述遮挡层覆盖所述电极区；
在所述第二板部背离所述电极的一侧形成吸光材料层，所述吸光材料层覆盖所述遮挡层与所述***区；
去除所述遮挡层。
在一个实施例中，所述第二板部包括设有所述电极的电极区及未设所述电极的***区，所述吸光膜层包括覆盖所述电极区的第一吸光膜层及覆盖所述***区的第二吸光膜层；所述第一吸光膜层的透光率大于所述第二吸光膜层的透光率。
在一个实施例中，所述第二板部包括设有所述电极的电极区及未设所述电极的***区，所述吸光膜层覆盖所述电极区与所述***区，所述吸光膜层覆盖所述电极区的部分与覆盖所述***区的部分的透光率相同，所述吸光膜层的透光率大于50％。
在一个实施例中，所述第二板部包括设有所述电极的电极区及未设所述电极的***区，所述激光束在所述基板上的投影覆盖所述电极区及所述***区。
在一个实施例中，所述在所述第二板部背离所述电极的一侧形成吸光膜层之后，所述芯片绑定方法还包括：
将所述显示模组置于支撑部上，所述激光束可通过所述支撑部。
在一个实施例中，所述激光器为红外激光器，所述支撑部由透明材料制备。
在一个实施例中，所述吸光膜层的材料包括光刻胶。
本申请实施例所达到的主要技术效果是：
本申请实施例提供的芯片绑定方法，通过在第二板部背离电极的一侧形成吸光膜层，激光器发射的激光束在经过吸光膜层时，部分被吸光膜层吸收，其余部分通过基板。吸光膜层吸收的激光束对基板加热，使基板温度升高；通过基板的激光束对异方性导电胶膜加热，异方性导电胶膜再将部分热量传递至芯片，使芯片温度升高。可知，本申请实施例提供的芯片绑定方法，通过控制吸光膜层的吸光率，可控制激光束被吸光膜层吸收的量及穿过基板的量，从而控制基板与芯片的温差在合适的范围，以使基板与芯片的形变量相同或者相差较小，避免基板与芯片形变量差别较大而导致基板及芯片翘曲变形的问题，可改善COG Mura现象。
附图说明
图1是本申请一示例性实施例提供的显示模组的剖视图；
图2是本申请一示例性实施例提供的显示模组的俯视图；
图3是本申请一示例性实施例提供的进行芯片绑定时显示模组与压头、激光器的位置关系示意图；
图4是本申请一示例性实施例提供的芯片绑定方法的流程图；
图5是本申请一示例性实施例提供的显示模组上形成吸光膜层的一种示意图；
图6是本申请一示例性实施例提供的显示模组上形成吸光膜层的另一种示意图；
图7是本申请一示例性实施例提供的显示模组上形成吸光膜层的再一种示意图。
具体实施方式
这里将详细地对示例性实施例进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施例并不代表与本申请相一致的所有实施例。相反，它们仅是与如所附权利要求书中所详述的、本申请的一些方面相一致的装置和方法的例子。
在本申请使用的术语是仅仅出于描述特定实施例的目的，而非旨在限制本申请。在本申请和所附权利要求书中所使用的单数形式的“一种”、“所述”和“该”也旨在包括多数形式，除非上下文清楚地表示其他含义。还应当理解，本文中使用的术语“和/或”是指并包含一个或多个相关联的列出项目的任何或所有可能组合。
应当理解，尽管在本申请可能采用术语第一、第二、第三等来描述各种信息，但这些信息不应限于这些术语。这些术语仅用来将同一类型的信息彼此区分开。例如，在不脱离本申请范围的情况下，第一信息也可以被称为第二信息，类似地，第二信息也可以被称为第一信息。取决于语境，如在此所使用的词语“如果”可以被解释成为“在……时”或“当……时”或“响应于确定”。
下面结合附图，对本申请的一些实施例作详细说明。在不冲突的情况下，下述的实施例及实施例中的特征可以相互组合。
在本申请实施例中，为描述方便，将由基板指向功能层的方向定义为上，将由功能层指向基板的方向定义为下，以此确定出上下方向。容易理解，不同的方向定义方式并不会影响工艺的实质操作内容以及产品的实际形态。
本申请实施例提供了一种芯片绑定方法。所述芯片绑定方法用于将芯片(Integrated Circuit，IC)绑定在显示模组上。
参见图1，所述显示模组100包括基板10及位于所述基板10上的功能层20。所述基板10包括第一板部101与第二板部102，第一板部101与第二板部102指的是同一基板的不同部分。所述功能层20位于所述第一板部101上，所述第二板部102的上侧设有电极30。其中，电极30用于与芯片电连接而实现芯片的绑定。
在一个实施例中，位于基板10上的功能层20可包括像素电路层及位于像素电路层上的像素层。像素电路层包括多个像素电路，像素层包括多个像素，每一像素电路用于驱动一个像素。电极30可与像素电路在同一工艺步骤中形成。
参见图2，显示模组100可包括显示区及边框区，功能层20位于显示区，第二板部102位于显示模组100的边框区。具体地，第二板部102可以位于显示模组100的下边框。第二板部102可包括电极区1021及***区1022，电极30设置在电极区1021，***区1022指的是第二板部102除去电极区1021之外的区域。显示模组100需要绑定多个芯片时，第二板部102可包括多个电极区1021，每一芯片对应一个电极区1021。
参见图3，在将芯片50绑定在基板10上时，需在电极30上涂覆异方性导电胶膜(Anisotropic Conductive Film，ACF)40，异方性导电胶膜40的粒子在压力及温度作用下破裂，使芯片50与电极30电连接。本申请实施例提供的芯片绑定方法，需要用到激光器60和压头70。激光器60位于基板10下方，激光器60可发射激光束61，对基板10及芯片50进行加热。压头70位于芯片50上方，压头70对芯片50施加压力。
参见图4，本申请实施例提供的芯片绑定方法包括如下步骤110至步骤140。
在步骤110中，在第二板部背离所述电极的一侧形成吸光膜层。
在步骤110之后，芯片绑定方法还可包括：将显示模组100置于支撑部80上。支撑部80用于支撑显示模组100。
现有技术中，在进行芯片绑定时，对芯片上方的压头升温，压头将热量传递至芯片，芯片再将部分热量传递至异方性导电胶膜。同时，在支撑部侧部设置加热部，加热部对支撑部加热，支撑部再热量传递至基板。为了避免压头与功能层接触损坏功能层，需保证芯片与功能层之间保持一定距离，不利于实现显示设备的窄边框设计。并且，通过加热部加热支撑部，支撑部将热量传递至基板来实现对基板加热，基板的温度变化存在滞后性，基板的温度不易控制，因而芯片与基板之间的温差不易控制，容易导致芯片与基板的形变量不一致，而造成芯片绑定完成后芯片与基板翘曲变形的问题。
本申请实施例中，通过在第二板部102背离电极30的一侧形成吸光膜层90，激光器60发射的激光束61在经过吸光膜层90时，部分被吸光膜层90吸收，其余部分通过基板10。吸光膜层90吸收的激光束61对基板10加热，使基板10温度升高；通过基板10的激光束61对异方性导电胶膜40加热，异方性导电胶膜40再将部分热量传递至芯片50，使芯片50温度升高。可知，本申请实施例中，通过激光束61对芯片50及基板10加热，不需要对压头70升温，压头70按压芯片50时不会因温度高而损坏芯片50，可将芯片50与功能层20之间的距离设置得较小，有利于实现显示设备的窄边框。并且，通过控制吸光膜层90的吸光率，可控制激光束61被吸光膜层90吸收的量及穿过基板10的量，从而控制基板10与芯片50的温差在合适的范围，以使基板10与芯片50的形变量相同或者相差较小，避免基板10与芯片50形变量差别较大而导致基板10及芯片50翘曲变形的问题，可改善COG Mura现象。
在一个实施例中，基板10可以是玻璃基板。玻璃基板对激光的透过率较高，未被吸光膜层90吸收的部分可穿过玻璃基板。
在一个实施例中，参见图5，吸光膜层90覆盖第二板部102的***区1022，未覆盖第二板部102的电极区1021。其中，吸光膜层90覆盖***区1022，指的是吸光膜层90在横向上的面积与***区1022的横截面的面积相同，也即是，***区1022全部被吸光膜层90覆盖。
如此设置，激光器60发射的激光束61在纵向上与电极区1021对应的部分通过电极区1021的量较大，对异方性导电胶膜40加热效率更高，异方性导电胶膜40可将更多的热量传递至芯片50，可使得芯片50的温度较高，更利于芯片50的绑定。
在一个示例性实施例中，在第二板部背离所述电极的一侧形成吸光膜层的步骤110，可通过如下步骤111和步骤112来实现。
在步骤111中，在所述第二板部背离所述电极的一侧形成吸光材料层，所述吸光材料层覆盖所述电极区及所述***区。
在该步骤中，可采用涂覆或者粘贴的方式在第二板部102背离电极30的一侧上形成吸光材料层。
在步骤112中，对所述吸光材料层进行图形化，将所述电极区覆盖的所述吸光材料层去除。
在该步骤中，可采用曝光显影工艺或者激光刻蚀工艺将吸光材料层覆盖在电极区1021的部分去除，吸光材料层覆盖在***区1022的部分未被去除，即为吸光膜层90。
在另一个示例性实施例中，在第二板部背离所述电极的一侧形成吸光膜的步骤110，可通过如下步骤113至步骤115来实现。
在步骤113中，在所述第二板部背离所述电极的一侧贴附遮挡层，所述遮挡层覆盖所述电极区。
在步骤114中，在所述第二板部背离所述电极的一侧形成吸光材料层，所述吸光材料层覆盖所述遮挡层与所述***区。
可采用涂覆或者粘贴的方式在第二板部102背离电极30的一侧上形成吸光材料层。
在步骤115中，去除所述遮挡层。
在该步骤中，去除遮挡层的过程中将覆盖电极区1021的吸光材料层一起去除，从而使形成的吸光膜层未覆盖电极区1021。
遮挡层可以是纸质的膜层或者塑料材质的膜层等，只要保证便于粘贴且便于去除即可。
在另一个实施例中，参见图6，所述吸光膜层90包括覆盖所述电极区1021的第一吸光膜层91及覆盖所述***区1022的第二吸光膜层92，所述第一吸光膜层91的透光率大于所述第二吸光膜层92的透光率。
如此设置，激光束61经过第一吸光膜层91的部分被吸收的量较多，经过第二吸光膜层92的部分被吸收的量较少，从而可使得异方性导电胶膜40及芯片50温度较高，有助于芯片50的绑定。通过选择透光率合适的第一吸光膜层91与第二吸光膜层92，可控制基板10与芯片50的温差在合适的范围，从而使基板10与芯片50的形变量相同或者相差较小。
在制备吸光膜层90时，可先制备第一吸光膜层91，再制备第二吸光膜层92。或者，也可以先制备第二吸光膜层92，再制备第一吸光膜层91。
在再一个实施例中，参见图7，所述吸光膜层90覆盖所述电极区1021与所述***区1022，所述吸光膜层90覆盖所述电极区1021的部分与覆盖所述***区1022的部分的透光率相同，且所述吸光膜层的透光率大于50％。如此，可使得激光束61被吸光膜层90吸收的量较少，透光吸光膜层90的量较多，可使得异方性导电胶膜40及芯片50温度较高，有助于芯片50的绑定。并且，由于吸光膜层90各处透光率相同，则吸光膜层90可在一个工序中形成，制备比较简单。
在步骤120中，在所述电极上涂覆异方性导电胶膜，并将所述芯片放置于所述异方性导电胶膜上。
在步骤130中，开启位于所述基板下方的激光器，所述激光器产生的激光束部分被所述吸光膜层吸收，部分穿过所述基板对所述异方性导电胶膜进行加热。
在一个实施例中，激光器60产生的激光束61在所述基板10上的投影覆盖所述电极区1021及所述***区1022。如此，当需要绑定多个芯片50时，激光束61对多个芯片50均能进行加热，且加热程度接近一致，比较利于芯片50的绑定。
在一个实施例中，所述激光器60为红外激光器，所述支撑部80由透明材料制备。支撑部80由透明材料制备，支撑部80对激光器60发射的红外光的透过率较高，从而使激光束61的利用率较高。
在步骤140中，采用压头向下按压所述芯片，以使所述芯片通过所述异方性导电胶膜与所述电极连通。
异方性导电胶膜40的温度升高后，呈现一定的流动性。通过压头70按压芯片50，压头70对芯片50施加的压力传递至异方性导电胶膜40，异方性导电胶膜40的粒子破裂，使芯片50与电极30电连接。
在一个实施例中，所述吸光膜层90的材料包括光刻胶。通过选择不同颜色及不同成分的光刻胶，可调节吸光膜层90对激光束61的透过率。
需要指出的是，在附图中，为了图示的清晰可能夸大了层和区域的尺寸。而且可以理解，当元件或层被称为在另一元件或层“上”时，它可以直接在其他元件上，或者可以存在中间的层。另外，可以理解，当元件或层被称为在另一元件或层“下”时，它可以直接在其他元件下，或者可以存在一个以上的中间的层或元件。另外，还可以理解，当层或元件被称为在两层或两个元件“之间”时，它可以为两层或两个元件之间唯一的层，或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。
本领域技术人员在考虑说明书及实践这里公开的公开后，将容易想到本发明的其它实施方案。本发明旨在涵盖本发明的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本发明的一般性原理并包括本发明未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本发明的真正范围和精神由下面的权利要求指出。
应当理解的是，本发明并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本发明的范围仅由所附的权利要求来限制。

Claims (10)

1.一种芯片绑定方法，其特征在于，所述芯片绑定方法用于将芯片绑定在显示模组上，所述显示模组包括基板及位于所述基板上的功能层，所述基板包括第一板部与第二板部，所述功能层位于所述第一板部上，所述第二板部上侧设有电极；所述芯片绑定方法包括：
在所述第二板部背离所述电极的一侧形成吸光膜层；
在所述电极上涂覆异方性导电胶膜，并将所述芯片放置于所述异方性导电胶膜上；
开启位于所述基板下方的激光器，所述激光器产生的激光束部分被所述吸光膜层吸收，部分穿过所述基板对所述异方性导电胶膜进行加热；
采用压头向下按压所述芯片，以使所述芯片通过所述异方性导电胶膜与所述电极连通。
2.根据权利要求1所述的芯片绑定方法，其特征在于，所述第二板部包括设有所述电极的电极区及未设所述电极的***区，所述吸光膜层覆盖所述***区且未覆盖所述电极区。
3.根据权利要求2所述的芯片绑定方法，其特征在于，所述在所述基板背离所述电极的一侧形成吸光膜层，包括：
在所述第二板部背离所述电极的一侧形成吸光材料层，所述吸光材料层覆盖所述电极区及所述***区；
对所述吸光材料层进行图形化，将所述电极区覆盖的所述吸光材料层去除。
4.根据权利要求2所述的芯片绑定方法，其特征在于，所述在所述第二板部背离所述电极的一侧形成吸光膜层，包括：
在所述第二板部背离所述电极的一侧贴附遮挡层，所述遮挡层覆盖所述电极区；
在所述第二板部背离所述电极的一侧形成吸光材料层，所述吸光材料层覆盖所述遮挡层与所述***区；
去除所述遮挡层。
5.根据权利要求1所述的芯片绑定方法，其特征在于，所述第二板部包括设有所述电极的电极区及未设所述电极的***区，所述吸光膜层包括覆盖所述电极区的第一吸光膜层及覆盖所述***区的第二吸光膜层；所述第一吸光膜层的透光率大于所述第二吸光膜层的透光率。
6.根据权利要求1所述的芯片绑定方法，其特征在于，所述第二板部包括设有所述电极的电极区及未设所述电极的***区，所述吸光膜层覆盖所述电极区与所述***区，所述吸光膜层覆盖所述电极区的部分与覆盖所述***区的部分的透光率相同，所述吸光膜层的透光率大于50％。
7.根据权利要求1所述的芯片绑定方法，其特征在于，所述第二板部包括设有所述电极的电极区及未设所述电极的***区，所述激光束在所述基板上的投影覆盖所述电极区及所述***区。
8.根据权利要求1所述的芯片绑定方法，其特征在于，所述在所述第二板部背离所述电极的一侧形成吸光膜层之后，所述芯片绑定方法还包括：
将所述显示模组置于支撑部上，所述激光束可通过所述支撑部。
9.根据权利要求8所述的芯片绑定方法，其特征在于，所述激光器为红外激光器，所述支撑部由透明材料制备。
10.根据权利要求1所述的芯片绑定方法，其特征在于，所述吸光膜层的材料包括光刻胶。
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Publication number Priority date Publication date Assignee Title
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Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3285294B2 (ja) * 1995-08-08 2002-05-27 太陽誘電株式会社 回路モジュールの製造方法
CN1642372A (zh) * 2004-01-16 2005-07-20 三洋电机株式会社 显示板的制造方法及显示板
US20050196711A1 (en) * 2004-03-03 2005-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
CN1702878A (zh) * 2004-05-28 2005-11-30 三洋电机株式会社 半导体装置及其制造方法
CN1818754A (zh) * 2005-02-10 2006-08-16 欧姆龙株式会社 接合方法以及接合装置
US20080295885A1 (en) * 2007-05-30 2008-12-04 Shing Man Lee Thick Crystalline Silicon Film On Large Substrates for Solar Applications
JP2011524073A (ja) * 2008-06-11 2011-08-25 コーニング インコーポレイテッド ガラスエンベロープを封着するためのマスクおよび方法
US20160043321A1 (en) * 2014-08-07 2016-02-11 Samsung Display Co., Ltd. Optical mask and laser transfer method using the same
CN105388797A (zh) * 2015-12-24 2016-03-09 信利（惠州）智能显示有限公司 一种异方性导电膜邦定装置及方法
US20160104864A1 (en) * 2011-11-29 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Sealed Structure, Light-Emitting Device, Electronic Device, and Lighting Device
CN207320071U (zh) * 2017-10-02 2018-05-04 盟立自动化股份有限公司 激光辅助接合装置
CN108227268A (zh) * 2018-01-31 2018-06-29 武汉华星光电技术有限公司 液晶显示装置的制作方法及液晶显示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2880840T3 (es) * 2010-05-06 2021-11-25 Immunolight Llc Composición de unión adhesiva y método de uso

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3285294B2 (ja) * 1995-08-08 2002-05-27 太陽誘電株式会社 回路モジュールの製造方法
CN1642372A (zh) * 2004-01-16 2005-07-20 三洋电机株式会社 显示板的制造方法及显示板
US20050196711A1 (en) * 2004-03-03 2005-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
CN1702878A (zh) * 2004-05-28 2005-11-30 三洋电机株式会社 半导体装置及其制造方法
CN1818754A (zh) * 2005-02-10 2006-08-16 欧姆龙株式会社 接合方法以及接合装置
US20080295885A1 (en) * 2007-05-30 2008-12-04 Shing Man Lee Thick Crystalline Silicon Film On Large Substrates for Solar Applications
JP2011524073A (ja) * 2008-06-11 2011-08-25 コーニング インコーポレイテッド ガラスエンベロープを封着するためのマスクおよび方法
US20160104864A1 (en) * 2011-11-29 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Sealed Structure, Light-Emitting Device, Electronic Device, and Lighting Device
US20160043321A1 (en) * 2014-08-07 2016-02-11 Samsung Display Co., Ltd. Optical mask and laser transfer method using the same
CN105388797A (zh) * 2015-12-24 2016-03-09 信利（惠州）智能显示有限公司 一种异方性导电膜邦定装置及方法
CN207320071U (zh) * 2017-10-02 2018-05-04 盟立自动化股份有限公司 激光辅助接合装置
CN108227268A (zh) * 2018-01-31 2018-06-29 武汉华星光电技术有限公司 液晶显示装置的制作方法及液晶显示装置

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