CN110972403A - Forming method of fine embedded circuit based on nano copper - Google Patents
Forming method of fine embedded circuit based on nano copper Download PDFInfo
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- CN110972403A CN110972403A CN201911229204.1A CN201911229204A CN110972403A CN 110972403 A CN110972403 A CN 110972403A CN 201911229204 A CN201911229204 A CN 201911229204A CN 110972403 A CN110972403 A CN 110972403A
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- nano
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- copper particles
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
Abstract
The invention discloses a method for forming a fine embedded circuit based on nano copper, which comprises the following steps: step A, processing a bulge with a target circuit shape on the surface of a hard substrate; b, pressing the hard substrate into the surface of the circuit carrier plate to form a groove with the shape of the target circuit on the surface of the circuit carrier plate; step C, filling the nano-copper particles in the grooves; d, sintering in a reducing atmosphere to sinter the nano-copper particles in the groove into a primary circuit; e, cleaning the surface of the circuit carrier plate by using an organic solution, and properly heating the circuit carrier plate according to the removal degree of the residual nano copper particles; and step F, electroplating the preliminary circuit to enable the metal copper to fill gaps among the nano copper particles in the groove and enable the circuit to be thickened to completely fill the whole groove, and finishing circuit forming. The invention utilizes the size effect of the nano-copper particles, can realize circuit forming at lower temperature, and has simpler process and operation.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a method for forming a fine embedded circuit based on nano copper.
Background
The printed circuit board is a support body of the electronic component and a carrier for electrical connection, and after the electronic equipment adopts the printed board, the printed boards of the same type have consistency, thereby reducing errors of manual wiring, realizing automatic insertion or mounting, automatic tin soldering and automatic detection of the electronic component, ensuring the quality of the electronic equipment, improving the labor productivity, reducing the cost and being convenient for maintenance. With the development of miniaturization and digitalization of electronic products, printed circuit boards are also developed in the directions of high density, high precision, fine pore diameter, fine wires, fine pitch, high reliability, multilayering, high-speed transmission, light weight and thinness, and higher requirements are put forward for the manufacture of fine circuits.
The common method is to use pattern plating to manufacture the circuit, firstly, base copper needs to be prefabricated, then a dry film is covered, after exposure and development and pattern plating, the process steps of film stripping, base copper etching and the like are needed, and the circuit manufacturing process is complex.
Disclosure of Invention
The present invention is directed to a method for forming a fine damascene circuit based on nano-copper, so as to solve the above-mentioned problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a forming method of a fine embedded circuit based on nano copper comprises the following steps:
step A, processing a bulge with a target circuit shape on the surface of a hard substrate;
b, pressing the hard substrate into the surface of the circuit carrier plate in a hot pressing mode, so that a groove in the shape of a target circuit is formed on the surface of the circuit carrier plate;
step C, filling the nano-copper particles in the groove;
d, sintering in a reducing atmosphere to sinter the nano-copper particles in the groove into a primary circuit;
e, cleaning the surface of the circuit carrier plate by using an organic solution, and properly heating the circuit carrier plate according to the removal degree of the residual nano copper particles;
and step F, electroplating the preliminary circuit to enable metal copper to fill gaps among the nano copper particles in the groove and enable the circuit to be thickened to completely fill the whole groove, and finishing circuit forming.
In the step E, the process of cleaning the surface of the circuit carrier plate is to put the circuit carrier plate into an organic solution for ultrasonic treatment.
In the step C, the nano-copper particles and a solvent are prepared into liquid or paste, and the liquid or paste is coated on the groove position of the circuit through a nozzle or a drip nozzle, so that the nano-copper particles are infiltrated into the groove.
The solvent is one of glycol, ethanol, terpineol or other organic alcohols, and rosin and soldering flux are added during preparation.
And directly conveying the nano copper particles to the groove position of the circuit in the atmosphere of inert gas.
And D, placing the circuit carrier plate into an annealing furnace for heating and sintering or irradiating the nano copper particles by using laser for sintering.
The particle size of each copper particle in the nano-copper particles is the same, or the nano-copper particles are formed by mixing nano-sized copper particles with different particle sizes, or the nano-copper particles are formed by mixing nano-sized particles and micron-sized particles; the particle size of the nano copper particles is 0.1-5 mu m; the particle shape of the nano-copper particle is one of a spherical shape, a linear shape and an irregular shape, or the nano-copper particle is formed by mixing a plurality of particles with different shapes.
The surface of the nano copper particle is coated with one or more of polyvinylpyrrolidone, imidazole, 2-phenylimidazole or benzimidazole.
The circuit carrier plate is a dielectric layer carrier plate, an ABF dielectric layer, a printed circuit board or a flexible circuit board, wherein the dielectric layer carrier plate is made of polyphenylene sulfide resin, FR-4 epoxy resin, BT resin or other epoxy resins.
A method for forming a fine embedded circuit comprises the following steps:
step 4, cleaning the surface of the circuit carrier plate by using an organic solution, and properly heating the circuit carrier plate according to the removal degree of the residual nano copper particles;
and step 5, electroplating the preliminary circuit to enable metal copper to fill gaps among the nano copper particles in the groove and enable the circuit to be thickened to completely fill the whole groove, and finishing circuit forming.
Drawings
The drawings are further illustrative of the invention, and the content of the drawings is not to be construed as limiting the invention in any way.
FIG. 1 is a schematic diagram of a circuit formation process in which one embodiment of the present invention is sintered in an annealing furnace;
FIG. 2 is a schematic diagram of a circuit formation process using laser sintering according to one embodiment of the present invention;
FIG. 3 is a schematic view of a circuit formation process for sintering in an annealing furnace according to another embodiment of the present invention;
FIG. 4 is a schematic diagram of a circuit formation process using laser sintering in accordance with another embodiment of the present invention;
in the drawings: 1-hard substrate, 2-circuit carrier plate, 21-groove, 22-target circuit, 23-preliminary circuit, 3-nano copper particles and 4-laser.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
A method for forming a fine damascene circuit based on nano-copper in the present embodiment, as shown in fig. 1 and 2, includes the following steps:
step A, processing a bulge with the shape of a target circuit 22 on the surface of a hard substrate 1;
step B, pressing the hard substrate 1 into the surface of the circuit carrier plate 2 in a hot pressing mode, so that a groove 21 with the shape of a target circuit 22 is formed on the surface of the circuit carrier plate 2;
step C, filling the nano copper particles 3 in the grooves 21;
d, sintering in a reducing atmosphere to sinter the nano-copper particles 3 in the groove 21 into a primary circuit 23;
e, cleaning the surface of the circuit carrier plate 2 by using an organic solution, and then properly heating the circuit carrier plate according to the cleaning degree of the residual nano copper particles 3;
and step F, electroplating the preliminary circuit 23 to enable metal copper to fill gaps among the nano copper particles 3 in the groove 21 and enable the circuit to be thickened to completely fill the whole groove 21, and finishing circuit forming.
Firstly, processing a bulge with a target shape on the surface of a hard substrate 1, then using the hard substrate 1 as a mold for extruding a groove 21 with a target circuit 22 shape on the surface of a circuit carrier plate 2, thus facilitating mass production, having higher efficiency and lower cost of mass production; then filling the nano copper particles 3 in the preformed circuit pattern groove 21 on the circuit carrier plate 2, and sintering the circuit carrier plate 2 in a reducing atmosphere by using a joint to enable the nano copper particles 3 to be fused and combined with each other; as is known, when the solid substance is in a large size, the melting point of the solid substance is fixed, but after the solid substance is ultra-fine, the melting point of the solid substance is significantly reduced, so that when the nano copper particles 3 are sintered, the nano-size effect of the nano copper particles 3 can be utilized, and therefore, the circuit forming can be realized at a lower temperature, and the sintering temperature is far lower than the melting point of the large-size metal copper; after sintering, in order to prevent the surface of the circuit carrier plate 2 from remaining unsintered nano-copper particles 3, the circuit carrier plate 2 is heated, the remaining nano-copper particles 3 are easy to fall off in an organic solution because the nano-copper particles are not sintered, and in order to avoid the organic solution from polluting the circuit, the surface of the circuit carrier plate 2 can be cleaned by using a volatile organic solvent so as to remove the remaining copper; but not removed for the sintered wires. After cleaning, further electroplating is needed to thicken the copper layer to a specified thickness, and the electroplating can also make the metal copper fill the sintered gaps of the nano copper particles 3 in the groove 21 so as to make the circuit more full, and then annealing treatment is carried out to eliminate stress, thus completing circuit forming. However, in the conventional circuit forming process, the bottom copper needs to be prefabricated on the circuit carrier plate 2, then the circuit forming can be completed through the steps of covering a dry film, exposing, developing and pattern electroplating, finally film stripping, bottom copper etching and the like, so that the process is very complex, the circuit forming efficiency is extremely low, the production and development steps are seriously slowed down, and the economic development of enterprises is restricted; compared with the traditional circuit forming, the forming method has the advantages that the process steps are fewer, the forming efficiency of the embedded circuit can be effectively improved, the forming of the embedded circuit can be realized at a lower temperature by utilizing the size effect of the nano copper particles 3, the forming of the embedded circuit is easier to operate, the influence of the embedded circuit on the circuit carrier plate 2 during sintering is reduced, the threshold for producing the embedded circuit is effectively reduced, and great economic benefits are brought to the society.
In the step E, the process of cleaning the surface of the circuit carrier 2 is to put the circuit carrier 2 into an organic solution for ultrasonic treatment.
The ultrasonic treatment can accelerate the molecular motion of the organic solution, so that when the circuit carrier plate 2 is put into the organic solution for ultrasonic treatment, the removal speed of the residual nano copper particles 3 on the surface of the circuit carrier plate 2 can be accelerated, and the cleaning efficiency is higher.
In the step C, the nano-copper particles 3 and a solvent are prepared into a liquid or paste, and the liquid or paste is coated on the groove 21 of the circuit through a nozzle or a drip nozzle, so that the nano-copper particles 3 penetrate into the groove 21.
The viscosity and the surface tension of the liquid or the paste are regulated and controlled by adjusting the solid-liquid ratio and the solvent components, so that the liquid or the paste can penetrate into and be adsorbed at the position of the groove 21 through the capillary phenomenon, and the nano-copper particles 3 can be better fixed in the groove 21, and in addition, because the specific surface area of the nano-copper particles 3 is larger, the nano-copper particles 3 are easy to oxidize when the nano-copper particles 3 are exposed in the air; the solvent may also serve to isolate the nano-copper particles 3 from the air, thereby effectively preventing the nano-copper particles 3 from being oxidized.
The solvent is one of glycol, ethanol, terpineol or other organic alcohols, and rosin and soldering flux are added during preparation.
The solvent adopts glycol, ethanol, terpineol or other organic alcohols, which can play a role in isolating air, can not react with the nano-copper particles 3, and can prevent the surface of the nano-copper particles 3 from being oxidized; in addition, rosin and soldering flux are added, so that after the nano copper particles 3 are melted, the copper particles have better metallurgical bonding performance, and the circuit forming effect is better.
The nano-copper particles 3 are directly fed to the location of the grooves 21 of the wire under an inert gas atmosphere.
The inert gas is used for conveying the nano-copper particles 3, so that the nano-copper particles 3 can be protected, and the surface of the nano-copper particles 31 can be prevented from being oxidized.
In the step D, the circuit carrier 2 is placed into an annealing furnace for sintering by heating or the nano-copper particles 3 are irradiated by the laser 4 for sintering.
The nano copper particles 3 can be fused and sintered by putting the circuit carrier plate 2 into an annealing furnace for heating, so as to form a target circuit 22; alternatively, the nano copper particles 3 absorb the energy of the laser beam 4 and generate heat by irradiation with the laser beam 4, thereby being melted and sintered into the target line 22.
The particle size of each copper particle in the nano-copper particles 3 is the same, or the nano-copper particles 3 are formed by mixing nano-sized copper particles with different particle sizes, or the nano-copper particles 3 are formed by mixing nano-sized particles and micron-sized particles; the particle size of the nano copper particles 3 is 0.1-5 mu m; the particle shape of the nano-copper particle 3 is one of a spherical shape, a linear shape and an irregular shape, or the nano-copper particle 3 is formed by mixing a plurality of particles with different shapes.
Because the cross section sizes of the target circuit 22 are different, and the nano-copper particles 3 with nano-sizes are higher in cost, the smaller the particle size is, the higher the price is; for the target circuit 22 with a smaller cross section, the nano copper particles 3 required for filling the groove 21 are fewer, and the nano copper particles 3 with the same particle size or the nano copper particles 3 with different particle sizes can be selected for filling; for the target circuit 22 with a larger cross section, if only the nano-sized copper nanoparticles 3 are adopted, the grooves 21 are filled with more nano-sized copper particles 3, the cost is higher, and at the moment, the nano-sized copper particles 3 formed by mixing the nano-sized copper particles and the micron-sized copper particles can be selected for filling, so that the using amount of the nano-sized copper particles can be reduced, and the production cost of the target circuit 22 can be reduced on the premise of ensuring the same forming effect of the target circuit 22.
The surface of the nano copper particle 3 is coated with one or more of polyvinylpyrrolidone, imidazole, 2-phenylimidazole or benzimidazole.
Polyvinylpyrrolidone, imidazole, 2-phenylimidazole and benzimidazole are easily volatilized or decomposed at the high temperature of laser 43, so that the nano copper particles 3 are coated by the materials, the nano copper particles 3 can be protected before sintering, the surface oxidation of the nano copper particles 3 is prevented, when the nano copper particles 3 are sintered, the materials coated on the surfaces of the nano copper particles 3 can volatilize or decompose at the high temperature, the nano copper particles 31 are exposed and melted, the forming of a circuit is completed, the materials coated on the surfaces of the nano copper particles 3 cannot remain after complete decomposition, and the circuit forming effect is better.
The circuit carrier 2 is a dielectric layer carrier, an ABF dielectric layer, a printed circuit board or a flexible circuit board which is made of polyphenylene sulfide resin, FR-4 epoxy resin, BT resin or other epoxy resins.
A method for forming a fine embedded circuit, as shown in fig. 3 and 4, comprising the steps of:
step 4, cleaning the surface of the circuit carrier plate 2 by using an organic solution, and properly heating the circuit carrier plate 2 according to the removal degree of the residual copper;
and step 5, electroplating the primary circuit 23 to enable metal copper to fill gaps among the nano copper particles 3 in the groove 21 and enable the circuit to be thickened to completely fill the whole groove 21, and finishing circuit forming.
For a small-lot or customized circuit board, the groove 21 having the same shape as the target circuit 22 can be directly formed on the circuit carrier 2, so that no additional mold is required, and the cost in the small-lot or customized production is lower.
Example one
A circuit pattern groove 21 with the width of 30 mu m is punched on a circuit carrier plate 2 made of polyphenylene sulfide (PI) 50x50mm by laser 4 with proper wavelength and energy, and then nano copper particles 3 coated by polyvinylpyrrolidone and with the particle size of 50nm are coated in the carrier plate groove 21. Removing the nano-copper particles 3 outside the grooves 21 by a mechanical method by using a brush, then placing the circuit carrier plate 2 in an annealing furnace for vacuumizing, and introducing reducing gas for sintering, wherein the reducing gas contains 95% of N by volume2(Nitrogen) and 5%H2(Hydrogen). Setting sintering parameters, wherein the heating rate is 0.5 ℃/s, heating from room temperature of 25 ℃ to 260 ℃, keeping the temperature at 260 ℃ for 20min, and then cooling to room temperature. After sintering, further electroplating to thicken the Cu layer to the plane of the carrier plate, and then annealing at 200 ℃ for 1 hour to finish circuit forming.
Example two
A circuit pattern groove 21 with the width of 50 mu m is formed on a circuit carrier plate 2 made of BT resin and 100x100mm through laser 4 with proper wavelength and energy, and nano copper particles 3 with the particle size of 100nm and coated by imidazole are coated in the groove 21 of the circuit carrier plate 2. Removing the nano copper outside the groove 21 by a brush through a mechanical method, placing the circuit carrier plate 2 in an annealing furnace, vacuumizing, and introducing reducing gas for sintering, wherein the reducing gas contains 95% of N by volume2And 5% of H2. Setting sintering parameters, wherein the heating rate is 1 ℃/s, heating from room temperature 25 ℃ to 260 ℃, keeping the temperature at 260 ℃ for 20min, and then cooling to room temperature. After sintering, further electroplating to thicken the Cu layer to the plane of the carrier plate, and then annealing at 200 ℃ for 1 hour to finish circuit forming.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive other specific embodiments of the present invention without inventive efforts, and such equivalent modifications or replacements are included within the scope defined by the claims of the present application.
Claims (10)
1. A forming method of a fine embedded circuit based on nano copper is characterized in that: the method comprises the following steps:
step A, processing a bulge with a target circuit shape on the surface of a hard substrate;
b, pressing the hard substrate into the surface of the circuit carrier plate in a hot pressing mode to form a groove with the shape of the target circuit on the surface of the circuit carrier plate;
step C, filling the nano-copper particles in the groove;
d, sintering in a reducing atmosphere to sinter the nano-copper particles in the groove into a primary circuit;
e, cleaning the surface of the circuit carrier plate by using an organic solution, and properly heating the circuit carrier plate according to the removal degree of the residual nano copper particles;
and step F, electroplating the preliminary circuit to enable the metal copper to fill gaps among the nano copper particles in the groove and enable the circuit to be thickened to completely fill the whole groove, and finishing circuit forming.
2. The method for forming a fine embedded circuit based on nano-copper as claimed in claim 1, wherein: in the step E, the process of cleaning the surface of the circuit carrier plate is to put the circuit carrier plate into an organic solution for ultrasonic treatment.
3. The method for forming a fine embedded circuit based on nano-copper as claimed in claim 1, wherein: in the step C, the nano-copper particles and a solvent are prepared into liquid or paste, and the liquid or paste is coated on the groove position of the circuit through a nozzle or a drip nozzle, so that the nano-copper particles are infiltrated into the groove.
4. The method for forming a fine embedded circuit based on nano-copper as claimed in claim 3, wherein: the solvent is one of glycol, ethanol, terpineol or other organic alcohols, and rosin and soldering flux are added during preparation.
5. The method for forming a fine embedded circuit based on nano-copper as claimed in claim 1, wherein: and directly conveying the nano copper particles to the groove position of the circuit in the atmosphere of inert gas.
6. The method for forming a fine embedded circuit based on nano-copper as claimed in claim 1, wherein: and D, placing the circuit carrier plate into an annealing furnace for heating and sintering or irradiating the nano copper particles by using laser for sintering.
7. The method for forming a fine embedded circuit based on nano-copper as claimed in claim 1, wherein: the particle size of each copper particle in the nano-copper particles is the same, or the nano-copper particles are formed by mixing nano-sized copper particles with different particle sizes, or the nano-copper particles are formed by mixing nano-sized particles and micron-sized particles; the particle size of the nano copper particles is 0.1-5 mu m; the particle shape of the nano-copper particle is one of a spherical shape, a linear shape and an irregular shape, or the nano-copper particle is formed by mixing a plurality of particles with different shapes.
8. The method for forming a fine embedded circuit based on nano-copper as claimed in claim 1, wherein: the surface of the nano copper particle is coated with one or more of polyvinylpyrrolidone, imidazole, 2-phenylimidazole or benzimidazole.
9. The method for forming a fine embedded circuit based on nano-copper as claimed in claim 1, wherein: the circuit carrier plate is a dielectric layer carrier plate, an ABF dielectric layer, a printed circuit board or a flexible circuit board, wherein the dielectric layer carrier plate is made of polyphenylene sulfide resin, FR-4 epoxy resin, BT resin or other epoxy resins.
10. A method for forming a fine embedded circuit is characterized in that: the method comprises the following steps:
step 1, processing a groove with the same shape as a target circuit on the surface of a circuit carrier plate in a laser processing, mechanical processing or chemical etching mode;
step 2, filling the nano-copper particles in the groove;
step 3, sintering is carried out in a reducing atmosphere, so that the nano copper particles in the groove are sintered into a primary circuit;
step 4, cleaning the surface of the circuit carrier plate by using an organic solution, and properly heating the circuit carrier plate according to the removal degree of the residual nano copper particles;
and step 5, electroplating the preliminary circuit to enable metal copper to fill gaps among nano copper particles in the groove and enable the circuit to be thickened to completely fill the whole groove, and finishing circuit forming.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911229204.1A CN110972403A (en) | 2019-12-04 | 2019-12-04 | Forming method of fine embedded circuit based on nano copper |
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| CN201911229204.1A CN110972403A (en) | 2019-12-04 | 2019-12-04 | Forming method of fine embedded circuit based on nano copper |
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| CN112786531A (en) * | 2020-12-31 | 2021-05-11 | 广东工业大学 | Method for preparing deep hole interconnection structure based on nano metal |
| CN113382554A (en) * | 2021-06-04 | 2021-09-10 | 广东工业大学 | Cleaning method of laser forming metal circuit |
| CN113394120A (en) * | 2021-06-03 | 2021-09-14 | 广东工业大学 | Fan-out type packaging structure based on laser forming and preparation method thereof |
| CN113411965A (en) * | 2021-04-30 | 2021-09-17 | 广东工业大学 | Manufacturing method of embedded fine circuit |
| CN113543527A (en) * | 2021-07-09 | 2021-10-22 | 广东工业大学 | Filling substrate type selection method for carrier plate hole filling process and carrier plate hole filling process |
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| CN113543527A (en) * | 2021-07-09 | 2021-10-22 | 广东工业大学 | Filling substrate type selection method for carrier plate hole filling process and carrier plate hole filling process |
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