CN110945720B - 各向异性导电膜 - Google Patents
各向异性导电膜 Download PDFInfo
- Publication number
- CN110945720B CN110945720B CN201880054523.0A CN201880054523A CN110945720B CN 110945720 B CN110945720 B CN 110945720B CN 201880054523 A CN201880054523 A CN 201880054523A CN 110945720 B CN110945720 B CN 110945720B
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- Prior art keywords
- insulating resin
- resin layer
- conductive particles
- anisotropic conductive
- conductive film
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Abstract
本发明涉及用于抑制在各向异性导电连接时因绝缘性树脂层流动导致的导电粒子的流动、提高导电粒子的捕获性、减少短路的各向异性导电膜,所述各向异性导电膜具有导电粒子分散于绝缘性树脂层的导电粒子分散层。该绝缘性树脂层为光聚合性树脂组合物的层。导电粒子附近的绝缘性树脂层的表面相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面具有倾斜或起伏。
Description
技术领域
本发明涉及各向异性导电膜。
背景技术
在IC芯片等电子部件的安装中,广泛使用使导电粒子分散于绝缘性树脂层的各向异性导电膜。在各向异性导电膜中,使导电粒子高密度地分散于绝缘性树脂层,使得能够应对高安装密度。但是,提高导电粒子的个数密度成为发生短路的原因。
对此,为了在减少短路的同时,改善在将各向异性导电膜临时压接于基板时的操作性,提出了将以单层埋入导电粒子的光聚合性树脂层和绝缘性粘接剂层层叠的各向异性导电膜(专利文献1)。作为该各向异性导电膜的使用方法,以光聚合性树脂层未聚合且具有粘性的状态进行临时压接,接着使光聚合性树脂层光聚合而固定导电粒子,然后,将基板和电子部件正式压接。
另外,为了达成与专利文献1相同的目的,还提出了将第1连接层夹持于主要由绝缘性树脂构成的第2连接层和第3连接层的3层结构的各向异性导电膜(专利文献2、3)。具体而言,专利文献2的各向异性导电膜的第1连接层具有在绝缘性树脂层的第2连接层侧的平面方向以单层排列导电粒子的结构,相邻的导电粒子间的中央区域的绝缘性树脂层厚比导电粒子附近的绝缘性树脂层厚变薄。另一方面,专利文献3的各向异性导电膜具有第1连接层与第3连接层的边界起伏的结构,第1连接层具有在绝缘性树脂层的第3连接层侧的平面方向以单层排列导电粒子的结构,相邻的导电粒子间的中央区域的绝缘性树脂层厚比导电粒子附近的绝缘性树脂层厚变薄。
现有技术文献
专利文献
专利文献1:日本特开2003-64324号公报;
专利文献2:日本特开2014-060150号公报;
专利文献3:日本特开2014-060151号公报。
发明概述
发明所要解决的课题
但是,在专利文献1所记载的各向异性导电膜中,存在以下问题:在各向异性导电连接的临时压接时导电粒子容易移动,在各向异性导电连接后无法维持各向异性导电连接前的导电粒子的精密配置,或者无法充分地隔开导电粒子间的距离。另外,若在将如上所述的各向异性导电膜与基板临时压接后使光聚合性树脂层光聚合,并使埋入有导电粒子的经光聚合的树脂层和电子部件贴合,则有在电子部件的凸点的端部难以捕获导电粒子的问题,或导电粒子的压入需要过大的力,无法充分地压入导电粒子的问题。另外,在专利文献1中,为了改善导电粒子的压入,也未充分地进行从导电粒子从光聚合性树脂层露出的观点等出发的研究。
因此,考虑代替光聚合性树脂层,使导电粒子分散于各向异性导电连接时的加热温度下为高粘度的热聚合性的绝缘性树脂层,在抑制各向异性导电连接时的导电粒子的流动性的同时,提高将各向异性导电膜与电子部件贴合时的操作性。但是,由于即使将导电粒子临时精密地配置于如上所述的绝缘性树脂层,若在各向异性导电连接时树脂层流动,则导电粒子也会同时流动,所以难以充分地实现导电粒子的捕获性(捕捉性)的提高或短路的减少,不仅难以使各向异性导电连接后的导电粒子维持当初的精密配置,而且难以使导电粒子彼此保持隔开的状态。因此,现状仍然是希望事先使导电粒子分散保持于光聚合性树脂层。
另外,在专利文献2、3所记载的3层结构的各向异性导电膜的情况下,虽然对于基本的各向异性导电连接特性未发现问题,但由于是3层结构,所以从制备成本的观点出发,要求减少制备工时。另外,在第1连接层的单面的导电粒子附近,第1连接层的整体或其一部分比导电粒子的外形大幅***(绝缘性树脂层本身变得不平坦),由于在该***的部分保持导电粒子,所以为了兼顾导电粒子的保持或不动性和容易被端子夹持,担心设计上的限制容易增多的问题。
与之相对的是,本发明的课题在于:在使导电粒子分散于光聚合性的绝缘性树脂层的各向异性导电膜中,即使不必需为3层结构,另外,即使在保持导电粒子的光聚合性的绝缘性树脂层的该导电粒子附近不使光聚合性的绝缘性树脂的整体或其一部分比导电粒子的外形大幅***,也抑制因各向异性导电连接时的光聚合性的绝缘性树脂层的流动导致的导电粒子的不必要的移动(流动),提高导电粒子的捕获性,并且减少短路。
用于解决课题的手段
本发明人在各向异性导电膜中设置将导电粒子分散于光聚合性的绝缘性树脂层的导电粒子分散层时,对于光聚合性的绝缘性树脂层的导电粒子附近的表面形状得到以下见解(i)、(ii),另外,对于光聚合性的绝缘性树脂层的光聚合的时机得到以下见解(iii)。
即,发现在专利文献1所记载的各向异性导电膜中,埋入有导电粒子的一侧的光聚合性的绝缘性树脂层本身的表面变得平坦,与之相对的是,(i) 在导电粒子从光聚合性的绝缘性树脂层露出的情况下,若使导电粒子周围的光聚合性的绝缘性树脂层的表面相对于相邻的导电粒子间的中央部的光聚合性的绝缘性树脂层的切面向该绝缘性树脂层内侧倾斜,则损害该绝缘性树脂层的表面的平坦性而变为部分缺损的状态(由于光聚合性的绝缘性树脂层的表面的一部分缺损,从而部分损害线性的绝缘性树脂层的表面的平坦性的状态),由此,可减少有在各向异性导电连接时妨碍端子间的导电粒子的夹持或扁平化之虞的不必要的绝缘性树脂,此外,(ii) 在导电粒子不从光聚合性的绝缘性树脂层露出而埋入在该绝缘性树脂层内的情况下,若在导电粒子正上方的绝缘性树脂层上相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面形成如波浪、即形成如成为痕迹的微小的起伏(以下只简单记为起伏),则在各向异性导电连接时导电粒子变得容易被端子压入,端子中的导电粒子的捕获性提高,此外各向异性导电膜的制品检查或使用层面的确认变得容易。另外,发现在通过将导电粒子压入至该绝缘性树脂层而形成导电粒子分散层的情况下,光聚合性的绝缘性树脂层的如上所述的倾斜或起伏可通过调整压入导电粒子时的绝缘性树脂层的粘度、压入速度、温度等来形成。
另外,(iii) 在使用如本发明所述的各向异性导电膜将电子部件彼此各向异性导电连接而制备连接结构体时,发现通过在一个电子部件上配置各向异性导电膜后,在其上方配置另一个电子部件之前对各向异性导电膜的光聚合性的绝缘性树脂层进行光照射,从而抑制在各向异性导电连接时该绝缘性树脂的最低熔融粘度的过度降低而防止导电粒子的不必要的流动,由此可在连接结构体中实现良好的导通特性。
本发明提供各向异性导电膜,其是具有导电粒子分散于绝缘性树脂层的导电粒子分散层的各向异性导电膜,
该绝缘性树脂层为光聚合性树脂组合物的层,
导电粒子附近的绝缘性树脂层的表面相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面具有倾斜或起伏。
在本发明的各向异性导电膜中,优选在所述倾斜中,导电粒子周围的绝缘性树脂层的表面成为所述切面并有缺损,在所述起伏中,导电粒子正上方的绝缘性树脂层的树脂量比使所述导电粒子正上方的绝缘性树脂层的表面位于该切面时少。或者,优选导电粒子的最深部距所述切面的距离Lb与导电粒子直径D之比(Lb/D)为30%以上且105%以下。
光聚合性树脂组合物可为光阳离子聚合性、光阴离子聚合性或光自由基聚合性,优选为含有成膜用聚合物、光阳离子聚合性化合物、光阳离子聚合引发剂和热阳离子聚合引发剂的光阳离子聚合性树脂组合物。在这里,优选的光阳离子聚合性化合物为选自环氧化合物和氧杂环丁烷化合物的至少一种,优选的光阳离子聚合引发剂为芳族鎓四(五氟苯基)硼酸盐。另外,在光聚合性树脂组合物为光自由基聚合性树脂组合物的情况下,优选含有成膜用聚合物、光自由基聚合性化合物、光自由基聚合引发剂和热自由基聚合引发剂。
在本发明的各向异性导电膜中,可在从绝缘性树脂层露出的导电粒子周围的绝缘性树脂层的表面形成倾斜或起伏,或在不从绝缘性树脂层露出而埋入在绝缘性树脂层内的导电粒子正上方的绝缘性树脂层的表面形成倾斜或起伏。另外,绝缘性树脂层的层厚La与导电粒子直径D之比(La/D)优选为0.6~10,优选将导电粒子相互不接触地配置。此外,导电粒子的最接近粒子间距离优选为导电粒子直径的0.5倍以上且4倍以下。
在本发明的各向异性导电膜中,可在绝缘性树脂层的与形成有倾斜或起伏的表面相反侧的表面层叠第2绝缘性树脂层,相反地,也可在绝缘性树脂层的形成有倾斜或起伏的表面层叠第2绝缘性树脂层。在这些情况下,优选第2绝缘性树脂层的最低熔融粘度低于绝缘性树脂层的最低熔融粘度。需说明的是,导电粒子的粒径的CV值优选为20%以下。
本发明的各向异性导电膜可通过以下的制备方法制备,所述制备方法具有形成导电粒子分散于绝缘性树脂层的导电粒子分散层的工序。在这里,形成导电粒子分散层的工序具有:使导电粒子以分散于由光聚合性树脂组合物构成的绝缘性树脂层表面的状态保持的工序;和将在绝缘性树脂层表面保持的导电粒子压入至该绝缘性树脂层的工序,在将该导电粒子压入至绝缘性树脂层表面的工序中,调整压入导电粒子时的绝缘性树脂层的粘度、压入速度或温度,使得导电粒子附近的绝缘性树脂层表面相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面具有倾斜或起伏。更具体而言,在将导电粒子压入至绝缘性树脂层的工序中,优选在所述倾斜中,使得导电粒子周围的绝缘性树脂层的表面相对于所述切面有缺损,在所述起伏中,使得导电粒子正上方的绝缘性树脂层的树脂量比在使所述导电粒子正上方的绝缘性树脂层的表面位于该切面时变少。或者,将导电粒子的最深部距所述切面的距离Lb与导电粒子直径D之比(Lb/D)设为30%以上且105%以下。在该数值范围内,若为30%以上且低于60%,则最低限度地保持导电粒子,并且导电粒子从树脂层的露出大,因此低温低压安装变得更容易,若为60%以上且105%以下,则变得更容易保持导电粒子,并且变得容易维持在连接前后被捕获的导电粒子的状态。
需说明的是,光聚合性树脂组合物、导电粒子的粒径的CV值如上所述。
另外,在本发明的各向异性导电膜的制备方法中,优选在使导电粒子保持于绝缘性树脂层表面的工序中,在光聚合性的绝缘性树脂层的表面以规定的排列保持导电粒子,在将导电粒子压入至该绝缘性树脂层的工序中,将导电粒子用平板或辊压入至光聚合性的绝缘性树脂层。另外,优选在使导电粒子保持于绝缘性树脂层表面的工序中,通过在转印模中填充导电粒子,并将该导电粒子转印于光聚合性的绝缘性树脂层,从而在绝缘性树脂层的表面以规定的配置保持导电粒子。
本发明还提供通过上述各向异性导电膜将第1电子部件和第2电子部件各向异性导电连接而得的连接结构体。
本发明的连接结构体可通过以下制备方法制备,所述制备方法具有:各向异性导电膜配置工序,所述工序相对于第1电子部件,从该导电粒子分散层的形成有倾斜或起伏的一侧或未形成倾斜或起伏的一侧配置各向异性导电膜;光照射工序,所述工序通过从各向异性导电膜侧或第1电子部件侧对各向异性导电膜进行光照射而使导电粒子分散层光聚合;和热压接工序,所述工序通过在经光聚合的导电粒子分散层上配置第2电子部件,并用热压接工具将第2电子部件加热加压,从而将第1电子部件与第2电子部件各向异性导电连接。优选在该配置工序中,相对于第1电子部件,从该导电粒子分散层的形成有倾斜或起伏的一侧配置各向异性导电膜,然后在光照射工序中,从各向异性导电膜侧进行光照射。
发明效果
本发明的各向异性导电膜具有导电粒子分散于光聚合性的绝缘性树脂层的导电粒子分散层。在该各向异性导电膜中,使导电粒子附近的绝缘性树脂层的表面相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面倾斜,或形成起伏。即,在导电粒子从光聚合性的绝缘性树脂层露出的情况下,露出的导电粒子周围的绝缘性树脂层具有倾斜,在导电粒子不从光聚合性的绝缘性树脂层露出而埋入在该绝缘性树脂层内的情况下,导电粒子正上方的绝缘性树脂层具有起伏,或导电粒子在1个点与绝缘性树脂层接触。
换言之,在本发明的各向异性导电膜中,由于将导电粒子埋入至光聚合性的绝缘性树脂,所以在导电粒子附近因埋入的程度而可存在树脂沿着导电粒子的外周存在的情况(例如参照图4、图6),或虽然绝缘性树脂整体的倾向是平坦,但在导电粒子附近,绝缘性树脂随着导电粒子的埋入而嵌入于内部的情况(例如参照图1B、图2)。嵌入于内部的情况也包含因导电粒子埋入树脂中而变为如断崖样的状态(图3)。也存在两者混杂的情况。本发明中的倾斜为绝缘性树脂随着导电粒子的埋入而嵌入于内部,从而形成的斜面,另外,起伏为如上所述的倾斜和随之堆积在导电粒子上的绝缘性树脂层(倾斜有时也会因堆积而消失)。如上所述,通过在绝缘性树脂上形成倾斜或起伏,导电粒子变为一部分或整体被埋入至绝缘性树脂的状态而被保持,因此可使连接时的树脂的流动等影响为最小限度,从而提高连接时的导电粒子的捕获性。另外,与专利文献2或3相比,由于导电粒子附近的绝缘性树脂量至少在与端子连接的膜面的一部分得到减少(导电粒子的厚度方向的绝缘性树脂量变少),所以端子与导电粒子变得容易直接接触。即,相对于连接时的压入而成为导电粒子的阻碍的树脂不存在或得到减少,从而以最小限度的树脂量构成。此外,虽然绝缘性树脂有基本沿着导电粒子的外形的表面脱落等,但不会产生过度的***。另外,由于该情况下的树脂可保持导电粒子,所以容易为较高粘度,优选成为与端子的连接面的膜面的、特别是导电粒子正上方的树脂量少。或者,由于相同的原因,也优选没有沿着导电粒子的外形保持导电粒子的较高粘度的树脂。如上所述,本发明遵循这些结构。需说明的是,沿着导电粒子的外形,在可期待变得容易显现压入的效果的同时,也可期待通过观察外观而在各向异性导电膜的制备中变得容易判定好坏的效果。另外,端子与导电粒子变得容易直接接触,预计在导通特性的提高或压入的均匀性方面也有效果。如上所述,通过兼顾利用较高粘度的绝缘性树脂对导电粒子的保持和导电粒子的膜面方向正上方的上述树脂的脱离或减少或变形,建立导电粒子的捕获和压入的均匀性、导通特性良好的条件。另外,也可使较高粘度的树脂本身(绝缘性树脂层的厚度)变薄,从而也可提高层叠较低粘度的第2树脂层等的设计自由度。若使较高粘度的树脂本身变薄,则变得容易取得连接工具的加热加压条件的界限(margin)。需说明的是,在这种情况下,在发挥更大的效果的方面希望导电粒子直径的偏差小。原因在于,若导电粒子直径的偏差变大,则每个导电粒子的倾斜或起伏的程度不同。
若从绝缘性树脂层露出的导电粒子周围的绝缘性树脂层具有倾斜,则在该倾斜部分,相对于在各向异性导电连接时导电粒子被夹持在端子间或被压塌成扁平,绝缘性树脂难以成为阻碍。另外,导电粒子周围的树脂量因倾斜而减少,相应地,与使导电粒子不必要地流动有关的树脂流动减少。由此,端子中的导电粒子的捕获性提高,导通可靠性提高。
另外,即使埋入在绝缘性树脂层内的导电粒子正上方的绝缘性树脂层具有起伏,与倾斜的情况相同地,在各向异性导电连接时来自端子的按压力也变得容易施加于导电粒子。其原因在于,导电粒子正上方的树脂量因起伏而减少地存在,通过使导电粒子固定,并且具有起伏,与树脂平坦地堆积的情况(参照图8)相比,估计在连接时变得容易产生树脂流动,也可期待与倾斜相同的效果。由此,在这种情况下端子中的导电粒子的捕获性也提高,导通可靠性提高。
根据如上所述的本发明的各向异性导电膜,导电粒子的捕获性提高,由于端子上的导电粒子难以流动,所以可精密地控制导电粒子的配置。因此,例如可用于端子宽度为6μm~50μm、端子间间隔为6μm~50μm的细间距的电子部件的连接。另外,若在导电粒子的大小低于3μm (例如2.5~2.8μm)时有效连接端子宽度(在连接时相对的一对端子的宽度中,俯视下重叠的部分的宽度)为3μm以上,且最短端子间距离为3μm以上,则可不引起短路而连接电子部件。
另外,由于可精密地控制导电粒子的配置,所以在连接标准间距的电子部件的情况下,可使分散性(各个导电粒子的独立性)或配置的规则性、粒子间距离等应对各种电子部件的端子的布局。
此外,若埋入在绝缘性树脂层内的导电粒子正上方的绝缘性树脂层具有起伏,则通过观察各向异性导电膜的外观明确地查明导电粒子的位置,因此制品检查变得容易,另外,在各向异性导电连接时各向异性导电膜的哪个膜面与基板贴合的使用层面的确认也变得容易。
另外,根据本发明的各向异性导电膜,由于不必为了固定导电粒子的配置而事先使光聚合性的绝缘性树脂层光聚合,所以在各向异性导电连接时绝缘性树脂层能够具有粘性。因此,将各向异性导电膜与基板临时压接时的操作性提高,在临时压接后压接电子部件时操作性也提高。
另一方面,根据本发明的各向异性导电膜的制备方法,调整将导电粒子埋入至绝缘性树脂层时的该绝缘性树脂层的粘度、压入速度、温度等,使得在绝缘性树脂层形成上述倾斜或起伏。因此,可容易地制备发挥上述效果的本发明的各向异性导电膜。
另外,构成本发明的各向异性导电膜的绝缘性树脂层由光聚合性树脂组合物构成。因此,在使用本发明的各向异性导电膜使电子部件彼此各向异性导电连接而制备连接结构体时,通过在一个电子部件上配置各向异性导电膜后,在其上方配置另一个电子部件之前,对各向异性导电膜的光聚合性的绝缘性树脂层进行光照射,从而抑制在各向异性导电连接时该绝缘性树脂的最低熔融粘度的过度降低而防止导电粒子的不必要的流动,由此在连接结构体中可实现良好的导通特性。
附图说明
[图1A] 图1A是表示实施例的各向异性导电膜10A的导电粒子的配置的平面图。
[图1B] 图1B是实施例的各向异性导电膜10A的截面图。
[图2] 图2是实施例的各向异性导电膜10B的截面图。
[图3] 图3是在绝缘性树脂层形成的可称之为“倾斜”与“起伏”的中间的状态的各向异性导电膜10C的截面图。
[图4] 图4是实施例的各向异性导电膜10D的截面图。
[图5] 图5是实施例的各向异性导电膜10E的截面图。
[图6] 图6是实施例的各向异性导电膜10F的截面图。
[图7] 图7是实施例的各向异性导电膜10G的截面图。
[图8] 图8是比较例的各向异性导电膜10X的截面图。
[图9] 图9是实施例的各向异性导电膜10H的截面图。
[图10] 图10是实施例的各向异性导电膜10I的截面图。
具体实施方式
以下边参照附图边对本发明的各向异性导电膜的一个实例进行详细地说明。需说明的是,在各图中,相同符号表示相同或同等的构成要素。
<各向异性导电膜的整体构成>
图1A是说明本发明的一个实施例的各向异性导电膜10A的粒子配置的平面图,图1B是其X-X截面图。
该各向异性导电膜10A例如可制成长度为5m以上的长条的膜形态,也可制成卷绕在卷芯上的卷装体。
各向异性导电膜10A由导电粒子分散层3构成,在导电粒子分散层3中,导电粒子1以露出的状态规则地分散于光聚合性的绝缘性树脂层2的单面。在膜的俯视下导电粒子1相互不接触,在膜厚方向导电粒子1也相互不重叠而规则地分散,构成导电粒子1的膜厚方向的位置对齐的单层的导电粒子层。
在各个导电粒子1周围的绝缘性树脂层2的表面2a,相对于相邻的导电粒子间的中央部的绝缘性树脂层2的切面2p形成倾斜2b。需说明的是,如下所述,在本发明的各向异性导电膜中,也可在埋入至绝缘性树脂层2的导电粒子1正上方的绝缘性树脂层的表面形成起伏2c (图4、图6)。
在本发明中,“倾斜”是指,在导电粒子1附近绝缘性树脂层的表面的平坦性受损,相对于所述切面2p树脂层的一部分缺损,而使得树脂量减少的状态。换言之,在倾斜中,导电粒子周围的绝缘性树脂层的表面相对于切面形成缺损。另一方面,“起伏”是指,在导电粒子正上方的绝缘性树脂层的表面具有波浪,因存在如波浪那样具有高低差的部分,而使得树脂量减少的状态。换言之,导电粒子正上方的绝缘性树脂层的树脂量比使导电粒子正上方的绝缘性树脂层的表面位于切面时变少。这些可对比相当于导电粒子正上方的部位和导电粒子间的平坦的表面部分(图1B、4、6的2f)来识别。需说明的是,起伏的起始点也有作为倾斜而存在的情况。
<导电粒子的分散状态>
本发明中的导电粒子的分散状态也包含导电粒子1无规则地分散的状态或分散成规则配置的状态。在这种分散状态下,优选将导电粒子相互不接触地配置,其个数比例优选为95%以上、更优选为98%以上、进一步优选为99.5%以上。关于该个数比例,在分散状态的规则配置中,接触的2个以上的导电粒子(换言之,凝聚的导电粒子)计为1个。可采用与后述的膜俯视下的导电粒子的占有面积率相同的测定方法,优选按N=200以上而求得。无论是在哪种情况下,从捕获稳定性的观点出发均优选膜厚方向的位置对齐。在这里,膜厚方向的导电粒子1的位置对齐是指,不限定于在膜厚方向的单一深度对齐,也包含在绝缘性树脂层2的正面和背面的界面或其附近分别存在导电粒子的方案。
另外,从兼顾捕获导电粒子和抑制短路的观点出发优选导电粒子1在膜的俯视下规则地排列。由于排列的方案取决于端子和凸点的布局,所以无特殊限定。例如,在膜的俯视下如图1A所示可设为正方格子排列。此外,作为导电粒子的规则排列的方案,可列举出长方格子、斜方格子、六方格子、三角格子等格子排列。也可为组合有多个不同形状的格子的方案。规则排列并不限定于如上所述的格子排列,例如也可使导电粒子以规定间隔排列成直线状的粒子列以规定的间隔并列。通过使导电粒子1相互不接触而形成格子状等规则排列,可在各向异性导电连接时对各导电粒子1均等地施加压力,减少导通电阻的偏差。规则排列例如可通过观察是否在膜的长边方向重复规定的粒子配置来确认。
此外,为了兼顾捕获稳定性和抑制短路而更优选在膜的俯视下规则地排列,并且膜厚方向的位置对齐。
另一方面,在所连接的电子部件的端子间间隔宽而不易发生短路的情况下,如果不使导电粒子规则地排列而不对导通造成妨碍的程度地存在导电粒子,则也可无规则地分散。在这种情况下,也优选与上述相同地分别独立的分散。原因在于,会使制备各向异性导电膜时的检查或管理变得容易。
在使导电粒子规则地排列的情况下,当具有其排列的格子轴或排列轴时,可与各向异性导电膜的长边方向或与长边方向平行的方向平行,或与各向异性导电膜的长边方向交叉,可根据所连接的端子宽度、端子间距、布局等确定。例如,在制成细间距用的各向异性导电膜的情况下,如图1A所示使导电粒子1的格子轴A相对于各向异性导电膜10A的长边方向倾斜,使用各向异性导电膜10A连接的端子20的长边方向(膜的短边方向)与格子轴A所成的角度θ为6°~84°、优选11°~74°。
导电粒子1的粒子间距离可根据用各向异性导电膜连接的端子的大小或端子间距而适宜确定。例如,在使各向异性导电膜应对细间距的COG (Chip On Glass)的情况下,从防止发生短路的观点出发优选使最接近粒子间距离为导电粒子直径D的0.5倍以上、更优选大于0.7倍。另一方面,从导电粒子1的捕获性的观点出发,优选使最接近粒子间距离为导电粒子直径D的4倍以下、更优选为3倍以下。
另外,导电粒子的面积占有率优选为35%以下、更优选为0.3~30%。该面积占有率可通过下式进行计算:
[俯视下的导电粒子的个数密度]×[平均1个导电粒子的俯视面积]×100。
在这里,作为导电粒子的个数密度的测定区域,优选任意地设定多个部位(优选5个部位以上,更优选10个部位以上)的1边为100μm以上的矩形区域,使测定区域的总面积为2mm2以上。各个区域的大小或数量只要根据个数密度的状态适宜调整即可。例如,可设置优选10个部位以上、更优选20个部位以上的以导电粒子直径D的30倍长度为1边的矩形区域,从而使测定区域的总面积为2mm2以上。作为细间距用途的个数密度较大的情况的一个实例,对于从各向异性导电膜10A任意选择的面积为100μm×100μm的区域的200个部位处(2mm2),通过使用由金属显微镜等得到的观测图像测定个数密度,并将其平均,从而可得到上述式中的“俯视下的导电粒子的个数密度”。在凸点间间隔为50μm以下的连接对象物中,面积为100μm×100μm的区域成为存在1个以上的凸点的区域。
需说明的是,如果面积占有率在上述范围内,则个数密度的值无特殊限制,在实际使用上,个数密度优选150~70000个/mm2,特别是在细间距用途的情况下优选为6000~42000个/mm2、更优选为10000~40000个/mm2、进一步更优选为15000~35000个/mm2。需说明的是,不排除个数密度低于150个/mm2的方案。
导电粒子的个数密度除了如上所述使用金属显微镜观察来求得以外,还可利用图像分析软件(例如WinROOF,三谷商事株式会社等)测量观察图像来求得。观察方法或测量方法并不限定于上述方法。
另外,平均1个导电粒子的俯视面积可通过测量膜面的由金属显微镜或SEM等电子显微镜等得到的观测图像来求得。还可使用图像分析软件。观察方法或测量方法并不限定于上述方法。
面积占有率是按压夹具为了将各向异性导电膜压接(优选热压接)于电子部件所需要的推力的指标。以往,为了使各向异性导电膜应对细间距,只要不发生短路,可缩窄导电粒子的粒子间距离,提高个数密度,但若这样提高个数密度,则电子部件的端子个数增多,每1个电子部件的连接总面积变大,随之而来的是,按压夹具为了将各向异性导电膜压接(优选热压接)于电子部件所需要的推力变大,担心在以往的按压夹具中产生按压不充分的问题。与之相对的是,通过如上所述使面积占有率为优选35%以下、更优选0.3~30%的范围,可将按压夹具为了将各向异性导电膜热压接于电子部件所需要的推力控制为较低。
<导电粒子>
导电粒子1可从公知的各向异性导电膜中使用的导电粒子中适宜选择使用。例如可列举出:镍、钴、银、铜、金、钯等金属粒子,焊料等合金粒子,包覆金属的树脂粒子等。也可并用2种以上。其中,从在连接后因树脂粒子回弹而变得容易维持与端子的接触,从而导通性能稳定的观点出发,优选包覆金属的树脂粒子。需说明的是,也可利用公知的技术对导电粒子的表面实施不对导通特性造成妨碍的绝缘处理。
为了可应对布线高度的偏差,另外,为了抑制导通电阻的上升,并且抑制短路的发生,导电粒子直径D优选为1μm以上且30μm以下、更优选为2.5μm以上且9μm以下。根据连接对象物,也有适用直径大于9μm的情况。分散于绝缘性树脂层之前的导电粒子的粒径可利用普通的粒度分布测定装置进行测定,另外,平均粒径也可使用粒度分布测定装置来求得。可为图像型或激光型。作为图像型的测定装置,作为一个实例可列举出湿式流动式粒径/形状分析装置FPIA-3000 (Malvern公司)。测定导电粒子直径D的样品数(导电粒子个数)优选1000个以上。各向异性导电膜中的导电粒子直径D可由SEM等电子显微镜观察而求得。在这种情况下,希望使测定导电粒子直径D的样品数(导电粒子个数)为200个以上。
构成本发明的各向异性导电膜的导电粒子的粒径的偏差优选CV值(标准偏差/平均)为20%以下。通过使CV值为20%以下,在夹持时变得容易均等地按压,特别是在排列的情况下可防止按压力局部地集中,可有助于导通的稳定性。另外,可在连接后利用压痕精确地进行连接状态的评价。另外,可使对各个导电粒子的光照射均匀化,而使绝缘性树脂层的光聚合均匀化。具体而言,无论是端子尺寸大的芯片(FOG等)还是小的芯片(COG等),均可利用压痕精确地进行连接状态的确认。因此,各向异性导电连接后的检查变得容易,可期待提高连接工序的生产性。
在这里,粒径的偏差可利用图像型粒度分析装置等计算。作为一个实例,未配置于各向异性导电膜的作为各向异性导电膜的原料粒子的导电粒子直径可使用湿式流动式粒径/形状分析装置FPIA-3000 (Malvern公司)求得。在这种情况下,如果测定优选1000个以上、更优选3000个以上、特别优选5000个以上的导电粒子个数,则可正确地把握导电粒子单体的偏差。在将导电粒子配置于各向异性导电膜的情况下,可与上述球形度相同地通过平面图像或截面图像来求得。
另外,构成本发明的各向异性导电膜的导电粒子优选为近似球形。通过使用近似球形的粒子作为导电粒子,例如在如日本特开2014-60150号公报所记载地使用转印模制备排列有导电粒子的各向异性导电膜时,由于导电粒子在转印模上平滑地滚动,所以可向转印模上的规定位置高精度地填充。因此,可精确地配置导电粒子。
在这里,近似球形是指用下式计算的球形度为70~100。
球形度={1-(So-Si)/So}×100
在上述式中,So为导电粒子的平面图像中的该导电粒子的外切圆的面积,Si为导电粒子的平面图像中的该导电粒子的内切圆的面积。
在该计算方法中,优选在各向异性导电膜的面视野和截面下拍摄导电粒子的平面图像,在各自的平面图像中测量任意的100个以上(优选200个以上)的导电粒子的外切圆的面积和内切圆的面积,求得外切圆的面积的平均值和内切圆的面积的平均值,作为上述So、Si。另外,在面视野和截面下,均优选球形度在上述范围内。面视野和截面的球形度之差优选为20以内、更优选为10以内。由于各向异性导电膜的生产时的检查主要在面视野下进行,而各向异性导电连接后的详细的好坏判定在面视野和截面这两者下进行,所以优选球形度之差小。若是导电粒子单体,则该球形度也可使用上述的湿式流动式粒径形状分析装置FPIA-3000 (Malvern公司)来求得。在将导电粒子配置于各向异性导电膜的情况下,与球形度相同地,可通过各向异性导电膜的平面图像或截面图像来求得。
<光聚合性的绝缘性树脂层>
(光聚合性的绝缘性树脂层的粘度)
绝缘性树脂层2的最低熔融粘度无特殊限制,可根据各向异性导电膜的应用对象或各向异性导电膜的制备方法等适宜确定。例如,只要可形成上述凹陷2b、2c,则根据各向异性导电膜的制备方法也可设为1000Pa·s左右。另一方面,作为各向异性导电膜的制备方法,在进行使导电粒子以规定的配置保持于绝缘性树脂层的表面,并将该导电粒子压入至绝缘性树脂层的方法时,从绝缘性树脂层可成膜的观点出发优选将树脂的最低熔融粘度设为1100Pa·s以上。
另外,如后述的各向异性导电膜的制备方法所述,从如图1B所示地在压入至绝缘性树脂层2的导电粒子1的露出部分周围形成凹陷2b、或如图6所示地在压入至绝缘性树脂层2的导电粒子1正上方形成凹陷2c的观点出发,优选为1500Pa·s以上、更优选为2000Pa·s以上、进一步优选为3000~15000Pa·s、进一步更优选为3000~10000Pa·s。作为一个实例,该最低熔融粘度可使用旋转式流变仪(TA instrument公司制),在5g的测定压力下保持恒定,使用直径为8mm的测定板来求得,更具体而言,在30~200℃的温度范围内,通过设定升温速度为10℃/分钟、测定频率为10Hz、相对于所述测定板的负荷变动为5g来求得。
通过将绝缘性树脂层2的最低熔融粘度设为1500Pa·s以上的高粘度,在将各向异性导电膜向连接对象压接时可抑制导电粒子的不必要的移动,特别是可防止在各向异性导电连接时应被端子间夹持的导电粒子会因树脂流动而流动。
另外,在通过将导电粒子1压入至绝缘性树脂层2而形成各向异性导电膜10A的导电粒子分散层3的情况下,压入导电粒子1时的绝缘性树脂层2在将导电粒子1压入至绝缘性树脂层2使得导电粒子1从绝缘性树脂层2露出时,形成如绝缘性树脂层2塑性变形而在导电粒子1周围的绝缘性树脂层2形成凹陷2b (图1B)的高粘度的粘性体,或者,在压入导电粒子1使得导电粒子1不从绝缘性树脂层2露出而埋入在绝缘性树脂层2时,形成如在导电粒子1正上方的绝缘性树脂层2的表面形成凹陷2c (图6)的高粘度的粘性体。因此,绝缘性树脂层2在60℃下的粘度的下限优选为3000Pa·s以上、更优选为4000Pa·s以上、进一步优选为4500Pa·s以上,上限优选为20000Pa·s以下、更优选为15000Pa·s以下、进一步优选为10000Pa·s以下。该测定可通过与最低熔融粘度相同的测定方法进行,提取温度为60℃的值来求得。需说明的是,在本发明中,并不排除60℃粘度低于3000Pa·s的情况。原因在于,在通过光照射进行连接的情况下,由于需要低温安装,所以若可保持导电粒子,则希望为更低粘度。
将导电粒子1压入至绝缘性树脂层2时的绝缘性树脂层2的具体的粘度根据所形成的凹陷2b、2c的形状或深度等,下限优选为3000Pa·s以上、更优选为4000Pa·s以上、进一步优选为4500Pa·s以上,上限优选为20000Pa·s以下、更优选为15000Pa·s以下、进一步优选为10000Pa·s以下。另外,希望在优选40~80℃、更优选50~60℃下得到如上所述的粘度。
如上所述,通过在从绝缘性树脂层2露出的导电粒子1周围形成凹陷2b (图1B),与没有凹陷2b的情况相比,相对于将各向异性导电膜向物品压接时产生的导电粒子1的扁平化而从树脂受到的阻力减少。因此,在各向异性导电连接时变得容易用端子夹持导电粒子,从而导通性能提高,另外,捕获性提高。
另外,通过在不从绝缘性树脂层2露出而埋入的导电粒子1正上方的绝缘性树脂层2的表面形成凹陷2c (图6),与没有凹陷2c的情况相比,将各向异性导电膜向物品压接时的压力变得容易集中于导电粒子1。因此,在各向异性导电连接时变得容易用端子夹持导电粒子,从而捕获性提高,导通性能提高。
(光聚合性的绝缘性树脂层的层厚)
在本发明的各向异性导电膜中,光聚合性的绝缘性树脂层2的层厚La与导电粒子直径D之比(La/D)优选为0.6~10。在这里,导电粒子直径D是指其平均粒径。若绝缘性树脂层2的层厚La过大,则在各向异性导电连接时导电粒子变得容易产生位置偏移,端子中的导电粒子的捕获性降低。若La/D超过10,则该倾向明显。因此,La/D更优选8以下,进一步更优选6以下。反之,若绝缘性树脂层2的层厚La过小而La/D低于0.6,则难以通过绝缘性树脂层2将导电粒子1维持为规定的粒子分散状态或规定的排列。特别是在所连接的端子为高密度COG的情况下,绝缘性树脂层2的层厚La与导电粒子直径D之比(La/D)优选为0.8~2。
(光聚合性的绝缘性树脂层的组成)
绝缘性树脂层2由光聚合性树脂组合物形成。例如,可由光阳离子聚合性树脂组合物、光自由基聚合性树脂组合物或光阴离子聚合性树脂组合物形成。在这些光聚合性树脂组合物中可根据需要含有热聚合引发剂。
(光阳离子聚合性树脂组合物)
光阳离子聚合性树脂组合物含有成膜用聚合物、光阳离子聚合性化合物、光阳离子聚合引发剂和热阳离子聚合引发剂。
(成膜用聚合物)
作为成膜用聚合物,可使用各向异性导电膜中应用的公知的成膜用聚合物,可列举出:双酚S型苯氧基树脂、具有芴骨架的苯氧基树脂、聚苯乙烯、聚丙烯腈、聚苯硫醚、聚四氟乙烯、聚碳酸酯等,它们可单独使用或组合使用2种以上。这些之中,从成膜状态、连接可靠性等观点出发可适合使用双酚S型苯氧基树脂。苯氧基树脂是由双酚类和表氯醇合成的多羟基聚醚。作为可在市场上获取的苯氧基树脂的具体例,可列举出新日铁住金化学(株)的商品名“FA290”等。
为了实现适度的最低熔融粘度,光阳离子聚合性树脂组合物中的成膜用聚合物的掺混量优选设为树脂成分(成膜用聚合物、光聚合性化合物、光聚合引发剂和热聚合引发剂的总和)的5~70wt%、更优选设为20~60wt%。
(光阳离子聚合性化合物)
光阳离子聚合性化合物为选自环氧化合物和氧杂环丁烷化合物的至少一种。
作为环氧化合物,优选使用5官能以下的化合物。作为5官能以下的环氧化合物,无特殊限定,可列举出:缩水甘油醚型环氧化合物、缩水甘油酯型环氧化合物、脂环型环氧化合物、双酚A型环氧化合物、双酚F型环氧化合物、双环戊二烯型环氧化合物、酚醛清漆苯酚型环氧化合物、联苯型环氧化合物、萘型环氧化合物等,可从这些之中单独使用1种,或组合使用2种以上。
作为可在市场上获取的缩水甘油醚型的单官能环氧化合物的具体例,可列举出四日市合成(株)的商品名“Epogosey EN”等。另外,作为可在市场上获取的双酚A型的2官能环氧化合物的具体例,可列举出DIC(株)的商品名“840-S”等。另外,作为可在市场上获取的双环戊二烯型的5官能环氧化合物的具体例,可列举出DIC(株)的商品名“HP-7200系列”等。
作为氧杂环丁烷化合物,无特殊限定,可列举出联苯型氧杂环丁烷化合物、亚二甲苯基型氧杂环丁烷化合物、倍半硅氧烷型氧杂环丁烷化合物、醚型氧杂环丁烷化合物、苯酚酚醛清漆型氧杂环丁烷化合物、硅酸酯型氧杂环丁烷化合物等,可从这些之中单独使用1种,或组合使用2种以上。作为可在市场上获取的联苯型的氧杂环丁烷化合物的具体例,可列举出宇部兴产(株)的商品名“OXBP”等。
为了实现适度的最低熔融粘度,光阳离子聚合性树脂组合物中的阳离子聚合性化合物的含量优选为树脂成分的10~70wt%、更优选为20~50wt%。
(光阳离子聚合引发剂)
作为光阳离子聚合引发剂,可使用公知的引发剂,可优选使用以四(五氟苯基)硼酸根(TFPB)为阴离子的鎓盐。由此,可抑制光固化后的最低熔融粘度的过度上升。认为其原因在于,TFPB的取代基大,分子量大。
作为光阳离子聚合引发剂的阳离子部分,可优选采用芳族锍、芳族碘鎓、芳族重氮鎓、芳族铵等芳族鎓。这些之中,优选采用作为芳族锍的三芳基锍。作为以TFPB为阴离子的鎓盐的可在市场上获取的具体例,可列举出BASF Japan(株)的商品名“IRGACURE 290”、富士胶片和光纯药(株)的商品名“WPI-124”等。
光阳离子聚合性树脂组合物中的光阳离子聚合引发剂的含量优选设为树脂成分中的0.1~10wt%、更优选设为1~5wt%。
(热阳离子聚合引发剂)
作为热阳离子聚合引发剂,无特殊限定,可列举出芳族锍盐、芳族碘鎓盐、芳族重氮鎓盐、芳族铵盐等,这些之中,优选使用芳族锍盐。作为可在市场上获取的芳族锍盐的具体例,可列举出三新化学工业(株)的商品名“SI-60”等。
热阳离子聚合引发剂的含量优选设为树脂成分的1~30wt%、更优选设为5~20wt%。
(光自由基聚合性树脂组合物)
光自由基聚合性树脂组合物含有成膜用聚合物、光自由基聚合性化合物、光自由基聚合引发剂和热自由基聚合引发剂。
作为成膜用聚合物,可适宜选择使用光阳离子聚合性树脂组合物中所述的聚合物。其含量也如上所述。
作为光自由基聚合性化合物,可使用以往公知的光自由基聚合性(甲基)丙烯酸酯单体。例如,可使用单官能(甲基)丙烯酸酯系单体、二官能以上的多官能(甲基)丙烯酸酯系单体。光自由基聚合性树脂组合物中的光自由基聚合性化合物的含量为树脂成分中的优选10~60质量%、更优选为20~55质量%。
作为热自由基聚合引发剂,可列举出有机过氧化物、偶氮系化合物等。特别是可优选使用不产生导致气泡的氮的有机过氧化物。根据固化率与产品寿命的平衡,相对于100质量份的(甲基)丙烯酸酯化合物,热自由基聚合引发剂的使用量优选为2~60质量份、更优选为5~40质量份。
(其它的成分)
在光阳离子聚合性树脂组合物或光自由基光聚合性树脂组合物等光聚合性树脂组合物中,为了调整最低熔融粘度,优选含有二氧化硅等绝缘性填充剂(以下只记为填充剂)。为了实现适度的最低熔融粘度,相对于光聚合性树脂组合物的总量,填充剂的含量优选为3~60wt%、更优选为10~55wt%、进一步优选为20~50wt%。另外,填充剂的平均粒径优选为1~500nm、更优选为10~300nm、进一步优选为20~100nm。
另外,为了提高各向异性导电膜与无机材料的界面的粘接性,光聚合性树脂组合物优选进一步含有硅烷偶联剂。作为硅烷偶联剂,可列举出:环氧基系、甲基丙烯酰氧基系、氨基系、乙烯基系、巯基-硫醚系、酰脲系等,这些可单独使用,也可组合使用2种以上。
此外,还可含有与上述的绝缘填充剂不同的填充剂、软化剂、促进剂、抗老化剂、着色剂(颜料、染料)、有机溶剂、离子捕集剂等。
(绝缘性树脂层的厚度方向的导电粒子的位置)
在本发明的各向异性导电膜中,如上所述,绝缘性树脂层2的厚度方向的导电粒子1的位置可为导电粒子1从绝缘性树脂层2露出,或不露出而埋入于绝缘性树脂层2内,导电粒子的最深部距相邻的导电粒子间的中央部的切面2p的距离(以下称为埋入量) Lb与导电粒子直径D之比(Lb/D) (以下称为埋入率)优选为30%以上且105%以下。需说明的是,导电粒子1可贯穿绝缘性树脂层2,这种情况下的埋入率(Lb/D)为100%。
若将埋入率(Lb/D)设为30%以上且低于60%,则因如上所述的原因而容易进行低温低压安装,通过设为60%以上,变得容易通过绝缘性树脂层2将导电粒子1维持为规定的粒子分散状态或规定的排列,另外,通过设为105%以下,可减少发挥在各向异性导电连接时使端子间的导电粒子不必要地流动的作用的绝缘性树脂层的树脂量。
需说明的是,在本发明中,埋入率(Lb/D)的数值是指各向异性导电膜中含有的所有导电粒子数的80%以上、优选90%以上、更优选96%以上为该埋入率(Lb/D)的数值。因此,埋入率为30%以上且105%以下是指各向异性导电膜中含有的所有导电粒子数的80%以上、优选90%以上、更优选96%以上的埋入率为30%以上且105%以下。通过如上所述地使所有导电粒子的埋入率(Lb/D)对齐,按压的负荷均匀地施加于导电粒子,因此端子中的导电粒子的捕获状态良好,可期待导通的稳定性。为了进一步提高精度,可测量200个以上的导电粒子来求得。
另外,埋入率(Lb/D)的测量可通过在面视野图像中调整焦点,对于某种程度的个数一并求得。或者,也可在埋入率(Lb/D)的测量中使用激光式辨别位移传感器(KEYENCE公司制等)。
(埋入率为30%以上且低于60%的方案)
作为埋入率(Lb/D)为30%以上且低于60%的导电粒子1的更具体的埋入方案,首先,如图1B中示出的各向异性导电膜10A所示,可列举出以30%以上且低于60%的埋入率埋入使得导电粒子1从绝缘性树脂层2露出的方案。该各向异性导电膜10A在绝缘性树脂层2的表面中与从该绝缘性树脂层2露出的导电粒子1接触的部分及其附近,相对于相邻的导电粒子间的中央部的绝缘性树脂层的表面2a的切面2p,具有成为基本沿着导电粒子外形的棱线的倾斜2b。
在通过将导电粒子1压入至绝缘性树脂层2而制备各向异性导电膜10A的情况下,如上所述的倾斜2b或后述的起伏2c可通过在40~80℃下以3000~20000Pa·s、更优选4500~15000Pa·s进行导电粒子1的压入来形成。
(埋入率为60%以上且低于100%的方案)
作为埋入率(Lb/D)为60%以上且105%以下的导电粒子1的更具体的埋入方案,与埋入率为30%以上且低于60%的方案相同地,首先,如图1B中示出的各向异性导电膜10A所示,可列举出以60%以上且低于100%的埋入率埋入使得导电粒子1从绝缘性树脂层2露出的方案。该各向异性导电膜10A在绝缘性树脂层2的表面中与从该绝缘性树脂层2露出的导电粒子1接触的部分及其附近,相对于相邻的导电粒子间的中央部的绝缘性树脂层的表面2a的切面2p,具有成为基本沿着导电粒子外形的棱线的倾斜2b。
在通过将导电粒子1压入至绝缘性树脂层2而制备各向异性导电膜10A的情况下,如上所述的倾斜2b或后述的起伏2c可通过在40~80℃下以3000~20000Pa·s、更优选4500~15000Pa·s进行导电粒子1的压入来形成。另外,倾斜2b或起伏2c有因热按压绝缘性树脂层等而其一部分会消失的情况。在倾斜2b不具有该痕迹的情况下,成为与起伏2c近似相同的形状(即,倾斜变化为起伏)。在起伏2c不具有该痕迹的情况下,导电粒子有以1个点在绝缘性树脂层2露出的情况。
(埋入率为100%的方案)
接着,在本发明的各向异性导电膜中,作为埋入率(Lb/D)为100%的方案,可列举出:如图2中示出的各向异性导电膜10B所示,在导电粒子1周围具有与图1B中示出的各向异性导电膜10A相同的成为基本沿着导电粒子外形的棱线的倾斜2b,且从绝缘性树脂层2露出的导电粒子1的露出直径Lc比导电粒子直径D小的方案;如图3中示出的各向异性导电膜10C所示,导电粒子1的露出部分周围的倾斜2b在导电粒子1附近陡峭地显现,且导电粒子1的露出直径Lc与导电粒子直径D近似相等的方案;如图4中示出的各向异性导电膜10D所示,在绝缘性树脂层2的表面具有浅的起伏2c,且导电粒子1以其顶部1a的1个点从绝缘性树脂层2露出的方案。
由于这些各向异性导电膜10B、10C、10D的埋入率为100%,所以导电粒子1的顶部1a和绝缘性树脂层2的表面2a共面(在一个面上)对齐。若导电粒子1的顶部1a和绝缘性树脂层2的表面2a共面对齐,则与如图1B所示地导电粒子1从绝缘性树脂层2突出的情况相比,在各向异性导电连接时在各个导电粒子周围膜厚度方向的树脂量难以变得不均匀,有可减少因树脂流动导致的导电粒子移动的效果。需说明的是,即使埋入率严格地来说不为100%,也可得到埋入至绝缘性树脂层2的导电粒子1的顶部和绝缘性树脂层2的表面为共面的程度地对齐的该效果。换言之,在埋入率(Lb/D)为大致90~100%的情况下,可说埋入至绝缘性树脂层2的导电粒子1的顶部和绝缘性树脂层2的表面为共面,可减少因树脂流动导致的导电粒子的移动。
在这些各向异性导电膜10B、10C、10D中,由于10D的导电粒子1周围的树脂量难以变得不均匀,所以可消除因树脂流动导致的导电粒子的移动,另外,虽然是顶部1a的1个点,但由于导电粒子从绝缘性树脂层2露出,所以端子中的导电粒子1的捕获性也好,可期待难以引起导电粒子的微小移动的效果。因此,该方案特别是在细间距或凸点间间隔狭小的情况下有效。
需说明的是,如后所述,倾斜2b、起伏2c的形状或深度不同的各向异性导电膜10B(图2)、10C (图3)、10D (图4)可通过改变压入导电粒子1时的绝缘性树脂层2的粘度等而制备。需说明的是,图3的方案可解释为图2 (倾斜的方案)和图4 (起伏的方案)的中间状态。本发明也包含该图3的方案。
(埋入率超过100%的方案)
在本发明的各向异性导电膜中,在埋入率超过100%的情况下,可列举出如图5中示出的各向异性导电膜10E所示,导电粒子1露出,且在其露出部分周围的绝缘性树脂层2具有相对于切面2p的倾斜2b或在导电粒子1正上方的绝缘性树脂层2的表面具有相对于切面2p的起伏2c的方案。
需说明的是,在导电粒子1的露出部分周围的绝缘性树脂层2具有倾斜2b的各向异性导电膜10E (图5)和在导电粒子1正上方的绝缘性树脂层2具有起伏2c的各向异性导电膜10F (图6)可通过改变在制备它们时的压入导电粒子1时的绝缘性树脂层2的粘度等而制备。
需说明的是,若将图5中示出的各向异性导电膜10E用于各向异性导电连接,则由于从端子直接按压导电粒子1,所以端子中的导电粒子的捕获性提高。另外,若将图6中示出的各向异性导电膜10F用于各向异性导电连接,则导电粒子1不直接按压端子,而经由绝缘性树脂层2按压,但由于在按压方向存在的树脂量比图8的状态(即,以超过100%的埋入率埋入导电粒子1,导电粒子1不从绝缘性树脂层2露出,并且绝缘性树脂层2的表面平坦的状态)少,所以变得容易对导电粒子施加按压力,并且妨碍在各向异性导电连接时端子间的导电粒子1因树脂流动而不必要地移动。
需说明的是,如图7所示,在埋入率(Lb/D)低于60%的各向异性导电膜10G中,由于导电粒子1变得容易在绝缘性树脂层2上滚动,所以从提高各向异性导电连接时的导电粒子的捕获率的观点出发,优选将埋入率(Lb/D)设为60%以上。
另外,在埋入率(Lb/D)超过100%的方案中,如图8中示出的比较例的各向异性导电膜10X所示,在绝缘性树脂层2的表面平坦的情况下,介于导电粒子1与端子之间的树脂量变得过多。另外,由于导电粒子1不直接与端子接触来按压端子,而经由绝缘性树脂层按压端子,由此导电粒子也容易因树脂流动而流动。
在本发明中,绝缘性树脂层2的表面的倾斜2b、起伏2c的存在可通过用扫描型电子显微镜观察各向异性导电膜的截面来确认,也可在面视野观察中确认。也可用光学显微镜、金属显微镜观察倾斜2b、起伏2c。另外,倾斜2b、起伏2c的大小也可通过在观察图像时调整焦点等来确认。即使在如上所述地通过热按压而使倾斜或起伏减少后,也是相同的。原因在于,有残留痕迹的情况。
<各向异性导电膜的变形方案>
(第2绝缘性树脂层)
本发明的各向异性导电膜如图9中示出的各向异性导电膜10H所示,在导电粒子分散层3的绝缘性树脂层2的形成倾斜2b的面,也可层叠最低熔融粘度低于该绝缘性树脂层2的第2绝缘性树脂层4。另外,如图10中示出的各向异性导电膜10I所示,也可在导电粒子分散层3的绝缘性树脂层2的未形成倾斜2b的面,层叠最低熔融粘度比低于该绝缘性树脂层2的第2绝缘性树脂层4。通过层叠第2绝缘性树脂层4,在使用各向异性导电膜各向异性导电连接电子部件时,填充由电子部件的电极或凸点形成的空间,可使粘接性提高。需说明的是,在层叠第2绝缘性树脂层4的情况下,无论第2绝缘性树脂层4是否位于倾斜2b的形成面上,优选第2绝缘性树脂层4位于用工具加压的IC芯片等电子部件侧(换言之,绝缘性树脂层2位于放置于台上的基板等电子部件侧)。由此,可避免导电粒子的不必要的移动,可提高捕获性。即使倾斜2b为起伏2c,也是相同的。
绝缘性树脂层2与第2绝缘性树脂层4的最低熔融粘度越是存在差异,越是变得容易用第2绝缘性树脂层4填充由电子部件的电极或凸点形成的空间,可期待提高电子部件彼此的粘接性的效果。另外,越是存在该差异,在导电粒子分散层3中存在的绝缘性树脂层2的移动量越是相对地变小,因此变得容易提高端子中的导电粒子的捕获性。在实际使用上,绝缘性树脂层2与第2绝缘性树脂层4的最低熔融粘度比优选为2以上、更优选为5以上、进一步优选为8以上。另一方面,若该之比过大,则在将长条的各向异性导电膜制成卷装体的情况下,有产生树脂溢出或粘连之虞,因此在实际使用上优选15以下。更具体而言,第2绝缘性树脂层4的优选的最低熔融粘度满足上述之比,并且为3000Pa·s以下、更优选为2000Pa·s以下、特别优选为100~2000Pa·s。
需说明的是,第2绝缘性树脂层4可在与绝缘性树脂层相同的树脂组合物中通过调整粘度而形成。
另外,在各向异性导电膜10H、10I中,由于有受电子部件或连接条件影响的部分,所以第2绝缘性树脂层4的层厚无特殊限定,优选为4~20μm。或者,相对于导电粒子直径,优选为1~8倍。
另外,若将绝缘性树脂层2和第2绝缘性树脂层4合在一起的各向异性导电膜10H、10I整体的最低熔融粘度过低,则担心树脂溢出,因此优选大于100Pa·s、更优选200~4000Pa·s。
(第3绝缘性树脂层)
也可与第2绝缘性树脂层4夹持绝缘性树脂层2而在相反侧设置第3绝缘性树脂层。例如,可使第3绝缘性树脂层作为粘合层起作用。也可与第2绝缘性树脂层相同地为了填充由电子部件的电极或凸点形成的空间而设置。
第3绝缘性树脂层的树脂组成、粘度和厚度可与第2绝缘性树脂层相同或不同。将绝缘性树脂层2、第2绝缘性树脂层4和第3绝缘性树脂层合在一起的各向异性导电膜的最低熔融粘度无特殊限制,但若过低,则担心树脂溢出,因此优选大于100Pa·s、更优选200~4000Pa·s。
<各向异性导电膜的制备方法>
本发明的各向异性导电膜可通过以下制备方法制备,所述制备方法具有形成导电粒子分散于绝缘性树脂层的导电粒子分散层的工序。
在该制备方法中,形成导电粒子分散层的工序具有:使导电粒子以分散于由光聚合性树脂组合物构成的绝缘性树脂层表面的状态保持的工序;和将在绝缘性树脂层表面保持的导电粒子压入至该绝缘性树脂层的工序。
在将该导电粒子压入至绝缘性树脂层表面的工序中,调整压入导电粒子时的绝缘性树脂层的粘度、压入速度或温度等,而使得导电粒子附近的绝缘性树脂层表面相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面具有倾斜或起伏。在这里,在将导电粒子压入至绝缘性树脂层的工序中,在所述倾斜中,导电粒子周围的绝缘性树脂层的表面相对于所述切面有缺损,在所述起伏中,导电粒子正上方的绝缘性树脂层的树脂量比使所述导电粒子正上方的绝缘性树脂层的表面位于所述切面时变少。或者,导电粒子的最深部距所述切面的距离Lb与导电粒子直径D之比(Lb/D)为30%以上且105%以下。需说明的是,对于导电粒子或光聚合性树脂组合物,可使用关于本发明的各向异性导电膜所述的材料相同的材料。
作为本发明的各向异性导电膜的制备方法的具体例,例如可通过在绝缘性树脂层2的表面以规定的排列保持导电粒子1,并用平板或辊将该导电粒子1压入至绝缘性树脂层而制备。需说明的是,在制备埋入率超过100%的各向异性导电膜的情况下,可用具有与导电粒子排列对应的凸部的压板压入。
在这里,绝缘性树脂层2中的导电粒子1的埋入量可通过压入导电粒子1时的按压力、温度等调整,另外,倾斜2b、起伏2c的形状和深度可通过压入时的绝缘性树脂层2的粘度、压入速度、温度等调整。
另外,作为使导电粒子1保持于绝缘性树脂层2的方法,可利用公知的方法。例如,通过将导电粒子1直接散布于绝缘性树脂层2,或使导电粒子1以单层附着于可双轴拉伸的膜,将该膜双轴拉伸,在该拉伸的膜上按压绝缘性树脂层2而将导电粒子转印于绝缘性树脂层2,从而使导电粒子1保持于绝缘性树脂层2。另外,也可使用转印模使导电粒子1保持于绝缘性树脂层2。
在使用转印模使导电粒子1保持于绝缘性树脂层2的情况下,作为转印模,例如可使用对硅、各种陶瓷、玻璃、不锈钢等金属等无机材料或各种树脂等有机材料等通过光刻法等公知的开口形成方法形成开口的转印模,应用印刷法的转印模。另外,转印模可采用板状、辊状等形状。需说明的是,本发明并不被上述方法所限定。
另外,在压入导电粒子的绝缘性树脂层的压入导电粒子的一侧的表面或其相反面,可层叠粘度低于绝缘性树脂层的第2绝缘性树脂层。
为了使用各向异性导电膜经济地进行电子部件的连接,各向异性导电膜优选为某种程度的长条。因此,各向异性导电膜将长度制备成优选5m以上、更优选10m以上、进一步优选25m以上。另一方面,若使各向异性导电膜过度变长,则不再能够使用在使用各向异性导电膜进行电子部件的制备的情况下使用的以往的连接装置,操作性也差。因此,各向异性导电膜将其长度制备成优选5000m以下、更优选1000m以下、进一步优选500m以下。从操作性优异的观点出发,各向异性导电膜的如上所述的长条体优选制成卷绕于卷芯的卷装体。
<各向异性导电膜的使用方法>
本发明的各向异性导电膜可在将IC芯片、IC模块、FPC等第1电子部件与FPC、玻璃基板、塑料基板、刚性基板、陶瓷基板等第2电子部件各向异性导电连接而制备连接结构体时优选使用。可使用本发明的各向异性导电膜将IC芯片或晶片堆叠而多层化。需说明的是,用本发明的各向异性导电膜连接的电子部件并不限定于上述电子部件。近年来,可用于多样化的各种电子部件。本发明也包含使用本发明的各向异性导电膜将电子部件彼此各向异性导电连接的连接结构体的制备方法或由此得到的连接结构体,即通过本发明的各向异性导电膜将电子部件彼此各向异性导电连接而得的连接结构体。
(连接结构体及其制备方法)
本发明的连接结构体是通过本发明的各向异性导电膜将第1电子部件与第2电子部件各向异性导电连接而得。作为第1电子部件,例如可列举出:LCD (Liquid CrystalDisplay)面板、有机EL (OLED)等平板显示器(FPD)用途、触摸面板用途等的透明基板,印制线路板(PWB)等。印制线路板的材质无特殊限定,例如可为FR-4基材等环氧玻璃,也可使用热塑性树脂等塑料、陶瓷等。另外,若透明基板为透明性高的基板,则无特殊限定,可列举出玻璃基板、塑料基板等。另一方面,第2电子部件具备与第1端子列相对向的第2端子列。第2电子部件无特殊限制,可根据目的适宜选择。作为第2电子部件,例如可列举出IC(Integrated Circuit)、柔性基板(FPC:Flexible Printed Circuits)、带载封装(TCP)基板、将IC安装于FPC而得的COF (Chip On Film)等。需说明的是,本发明的连接结构体可通过具有以下配置工序、光照射工序和热压接工序的制备方法制备。
(配置工序)
首先,相对于第1电子部件,从该导电粒子分散层的形成有倾斜或起伏的一侧或未形成倾斜或起伏的一侧配置各向异性导电膜。若从导电粒子分散层的形成有倾斜或起伏的一侧配置,则通过光照射倾斜或起伏的部位,可期待促进树脂量较少的部分的反应而兼顾导电粒子的压入和保持的效果。反之,若相对于第1电子部件,从导电粒子分散层的未形成倾斜或起伏的一侧配置各向异性导电膜,则通过对在第1电子部件侧存在的树脂量较多的部分照射光,可期待导电粒子的夹持状态容易变得牢固。需说明的是,若考虑光照射工序,则优选从导电粒子分散层的形成有倾斜或起伏的一侧配置。其原因在于,通过缩短第1电子部件与导电粒子的距离,可期待提高捕获性。
(光照射工序)
接着,通过从各向异性导电膜侧或第1电子部件侧对各向异性导电膜进行光照射(所谓预先照射)而使导电粒子分散层光聚合。通过光聚合,变得容易进行低温下的连接,可避免对所连接的电子部件过度地加热。另外,若从各向异性导电膜侧进行光照射,则可在搭载第2电子部件前引发因对各向异性导电膜整体的均匀的光照射而产生的反应,可排除来自于设置在第1电子部件的遮光部(与布线有关的部分)的影响。反之,若从第1电子部件侧进行光照射,则不再需要考虑第2电子部件的搭载。需说明的是,关于第2电子部件的搭载,随着连接装置的发展,若考虑连接工序时的负担相对地降低,则优选从各向异性导电膜侧进行光照射。
基于光照射的导电粒子分散层的光聚合的程度可用称为反应率的指标评价,优选为70%以上、更优选为80%以上、进一步更优选为90%以上。上限为100%以下。反应率可使用市售的HPLC (高效液相色谱装置,换算成苯乙烯)测定光聚合前后的树脂组合物。另外,为了实现各向异性导电连接时的良好的导电粒子捕获性和压入,本工序的光照射后的导电粒子分散层的最低熔融粘度(即连接挤出前的最低熔融粘度。也可解释为光聚合开始后的最低熔融粘度)的下限优选为1000Pa·s以上、更优选为1200Pa·s以上,上限优选为8000Pa·s以下、更优选为5000Pa·s以下。达到该最低熔融粘度的温度优选为60~100℃、更优选为65~85℃。
作为照射光,可根据光聚合性的各向异性导电膜的聚合特性从紫外线(UV:ultraviolet)、可见光(visible light)、红外线(IR:infrared)等波长带选择。其中,优选能量高的紫外线(通常波长为10nm~400nm)。
需说明的是,优选在配置工序中,相对于第1电子部件,从该导电粒子分散层的形成有倾斜或起伏的一侧配置各向异性导电膜,然后在光照射工序中,从各向异性导电膜侧进行光照射。
(热压接工序)
通过在经光照射的各向异性导电膜上配置第2电子部件,并用公知的热压接工具将第2电子部件加热加压,从而使第1电子部件与第2电子部件各向异性导电连接,可得到连接结构体。需说明的是,为了低温化,热压接工具也可不加热而作为压接工具使用。各向异性导电连接条件可根据所使用的电子部件或各向异性导电膜等适宜设定。需说明的是,也可在热压接工具与应连接的电子部件之间配置聚四氟乙烯片、聚酰亚胺片、玻璃布、硅橡胶等缓冲材料进行热压接。需说明的是,在热压接时,也可从第1电子部件侧进行光照射。
产业上的可利用性
本发明的各向异性导电膜具有导电粒子分散于由光聚合性树脂组合物构成的绝缘性树脂层的导电粒子分散层,导电粒子附近的绝缘性树脂层的表面相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面具有倾斜或起伏。因此,在使电子部件彼此各向异性导电连接而制备连接结构体时,通过在一个电子部件上配置各向异性导电膜后,在其上方配置另一个电子部件之前,对各向异性导电膜的光聚合性的绝缘性树脂层进行光照射,从而抑制在各向异性导电连接时该绝缘性树脂的最低熔融粘度的过度降低而可防止导电粒子的不必要的流动,由此可在连接结构体中实现良好的导通特性。因此,本发明的各向异性导电膜对半导体装置等电子部件向各种基板的安装有用。
符号说明
1 导电粒子;
1a 导电粒子的顶部;
2 绝缘性树脂层;
2a 绝缘性树脂层的表面;
2b 凹陷(倾斜);
2c 凹陷(起伏);
2f 平坦的表面部分;
2p 切面;
3 导电粒子分散层;
4 第2绝缘性树脂层;
10A、10B、10C、10D、10E、10F、10G、10H、10I 实施例的各向异性导电膜;
20 端子;
A 导电粒子的排列的格子轴;
D 导电粒子直径;
La 绝缘性树脂层的层厚;
Lb 埋入量(导电粒子的最深部距相邻的导电粒子间的中央部的切面的距离);
Lc 露出直径;
θ 端子的长边方向与导电粒子的排列的格子轴所成的角度。
Claims (35)
1.各向异性导电膜,其是具有导电粒子分散于绝缘性树脂层的导电粒子分散层的各向异性导电膜,
该绝缘性树脂层为光聚合性树脂组合物的层,
导电粒子附近的绝缘性树脂层的表面相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面具有倾斜或起伏,
导电粒子的最深部距所述切面的距离Lb与导电粒子的粒径D之比、即Lb/D为30%以上且105%以下。
2.根据权利要求1所述的各向异性导电膜,其中,在所述倾斜中,导电粒子周围的绝缘性树脂层的表面相对于所述切面有缺损,在所述起伏中,导电粒子正上方的绝缘性树脂层的树脂量比使所述导电粒子正上方的绝缘性树脂层的表面位于所述切面时少。
3.根据权利要求2所述的各向异性导电膜,其中,导电粒子的最深部距所述切面的距离Lb与导电粒子的粒径D之比、即Lb/D为30%以上且低于60%。
4.根据权利要求2所述的各向异性导电膜,其中,导电粒子的最深部距所述切面的距离Lb与导电粒子的粒径D之比、即Lb/D为60%以上且低于100%。
5.根据权利要求1~4中任一项所述的各向异性导电膜,其中,光聚合性树脂组合物为光阳离子聚合性树脂组合物。
6.根据权利要求1~4中任一项所述的各向异性导电膜,其中,光聚合性树脂组合物为光自由基聚合性树脂组合物。
7.根据权利要求1~4中任一项所述的各向异性导电膜,其中,在从绝缘性树脂层露出的导电粒子周围的绝缘性树脂层的表面形成有倾斜或起伏。
8.根据权利要求1~4中任一项所述的各向异性导电膜,其中,在不从绝缘性树脂层露出而埋入在绝缘性树脂层内的导电粒子正上方的绝缘性树脂层的表面形成有倾斜或起伏。
9.根据权利要求1~4中任一项所述的各向异性导电膜,其中,绝缘性树脂层的层厚La与导电粒子的粒径D之比、即La/D为0.6~10。
10.根据权利要求1~4中任一项所述的各向异性导电膜,其中,将导电粒子相互不接触地配置。
11.根据权利要求1~4中任一项所述的各向异性导电膜,其中,导电粒子的最接近粒子间距离为导电粒子直径的0.5倍以上且4倍以下。
12.根据权利要求1~4中任一项所述的各向异性导电膜,其中,在绝缘性树脂层的与形成有倾斜或起伏的表面相反侧的表面,层叠有第2绝缘性树脂层。
13.根据权利要求1~4中任一项所述的各向异性导电膜,其中,在绝缘性树脂层的形成有倾斜或起伏的表面,层叠有第2绝缘性树脂层。
14.根据权利要求12所述的各向异性导电膜,其中,第2绝缘性树脂层的最低熔融粘度低于绝缘性树脂层的最低熔融粘度。
15.根据权利要求13所述的各向异性导电膜,其中,第2绝缘性树脂层的最低熔融粘度低于绝缘性树脂层的最低熔融粘度。
16.根据权利要求13所述的各向异性导电膜,其中,在绝缘性树脂层的形成有倾斜或起伏的表面的相反侧,层叠有第3绝缘性树脂层。
17.根据权利要求1~4中任一项所述的各向异性导电膜,其中,导电粒子为选自金属粒子、合金粒子、和包覆金属的树脂粒子中的1种或2种以上。
18.根据权利要求1~4中任一项所述的各向异性导电膜,其中,导电粒子可并用2种以上。
19.根据权利要求1~4中任一项所述的各向异性导电膜,其中,导电粒子的个数密度为150~70000个/mm2。
20.根据权利要求1~4中任一项所述的各向异性导电膜,其中,导电粒子的面积占有率为35%以下。
21.根据权利要求1~4中任一项所述的各向异性导电膜,其中,导电粒子的粒径的CV值为20%以下。
22.各向异性导电膜的制备方法,其是具有形成导电粒子分散于绝缘性树脂层的导电粒子分散层的工序的、根据权利要求1所述的各向异性导电膜的制备方法,
形成导电粒子分散层的工序具有:使导电粒子以分散于由光聚合性树脂组合物构成的绝缘性树脂层表面的状态保持的工序;和将在绝缘性树脂层表面保持的导电粒子压入至该绝缘性树脂层的工序,
在将导电粒子压入至绝缘性树脂层表面的工序中,调整压入导电粒子时的绝缘性树脂层的粘度、压入速度或温度,使得导电粒子附近的绝缘性树脂层表面相对于相邻的导电粒子间的中央部的绝缘性树脂层的切面具有倾斜或起伏,
导电粒子的最深部距所述切面的距离Lb与导电粒子直径D之比、即Lb/D为30%以上且105%以下。
23.根据权利要求22所述的各向异性导电膜的制备方法,其中,在将导电粒子压入至绝缘性树脂层的工序中,在所述倾斜中,导电粒子周围的绝缘性树脂层的表面相对于所述切面有缺损,在所述起伏中,导电粒子正上方的绝缘性树脂层的树脂量比使所述导电粒子正上方的绝缘性树脂层的表面位于所述切面时少。
24.根据权利要求23所述的各向异性导电膜的制备方法,其中,导电粒子的最深部距所述切面的距离Lb与导电粒子的粒径D之比、即Lb/D为30%以上且低于60%。
25.根据权利要求23所述的各向异性导电膜的制备方法,其中,导电粒子的最深部距所述切面的距离Lb与导电粒子的粒径D之比、即Lb/D为60%以上且低于100%。
26.根据权利要求22~25中任一项所述的各向异性导电膜的制备方法,其中,光聚合性树脂组合物为光阳离子聚合性树脂组合物。
27.根据权利要求22~25中任一项所述的各向异性导电膜的制备方法,其中,光聚合性树脂组合物为光自由基聚合性树脂组合物。
28.根据权利要求22~25中任一项所述的各向异性导电膜的制备方法,其中,导电粒子直径的CV值为20%以下。
29.根据权利要求22~25中任一项所述的各向异性导电膜的制备方法,其中,在使导电粒子保持于绝缘性树脂层表面的工序中,在绝缘性树脂层的表面以规定的排列保持导电粒子,
在将导电粒子压入至该绝缘性树脂层的工序中,将导电粒子用平板或辊压入至绝缘性树脂层。
30.根据权利要求22~25中任一项所述的各向异性导电膜的制备方法,其中,在使导电粒子保持于绝缘性树脂层表面的工序中,通过在转印模中填充导电粒子,并将该导电粒子转印于绝缘性树脂层,从而在绝缘性树脂层的表面以规定的排列保持导电粒子。
31.连接结构体,其是通过根据权利要求1~21中任一项所述的各向异性导电膜将第1电子部件和第2电子部件各向异性导电连接而得的连接结构体。
32.连接结构体的制备方法,其是将第1电子部件和第2电子部件经由根据权利要求1~21中任一项所述的各向异性导电膜进行各向异性导电连接而得的连接结构体的制备方法,所述制备方法具有:
各向异性导电膜配置工序,所述工序相对于第1电子部件,从该导电粒子分散层的形成有倾斜或起伏的一侧或未形成倾斜或起伏的一侧配置各向异性导电膜;
光照射工序,所述工序通过从各向异性导电膜侧或第1电子部件侧对各向异性导电膜进行光照射而使导电粒子分散层光聚合;和
热压接工序,所述工序通过在经光聚合的导电粒子分散层上配置第2电子部件,并用热压接工具将第2电子部件加热加压,从而将第1电子部件与第2电子部件各向异性导电连接。
33.根据权利要求32所述的连接结构体的制备方法,其中,在配置工序中,相对于第1电子部件,从该导电粒子分散层的形成有倾斜或起伏的一侧配置各向异性导电膜,然后,
在光照射工序中,从各向异性导电膜侧进行光照射。
34.连接结构体的制备方法,其是将第1电子部件和第2电子部件经由根据权利要求1~21中任一项所述的各向异性导电膜进行各向异性导电连接而得的连接结构体的制备方法,所述制备方法具有:
各向异性导电膜配置工序,所述工序相对于第1电子部件,从该导电粒子分散层的形成有倾斜或起伏的一侧或未形成倾斜或起伏的一侧配置各向异性导电膜;
光照射工序,所述工序通过从各向异性导电膜侧或第1电子部件侧对各向异性导电膜进行光照射而使导电粒子分散层光聚合;和
热压接工序,所述工序通过在经光聚合的导电粒子分散层上配置第2电子部件,并用热压接工具将第2电子部件加压,从而将第1电子部件与第2电子部件各向异性导电连接。
35.根据权利要求34所述的连接结构体的制备方法,其中,在配置工序中,相对于第1电子部件,从该导电粒子分散层的形成有倾斜或起伏的一侧配置各向异性导电膜,然后,
在光照射工序中,从各向异性导电膜侧进行光照射。
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