CN110938807A - Control method and system for returning wafer of PVD sputtering equipment to disc according to specified path - Google Patents
Control method and system for returning wafer of PVD sputtering equipment to disc according to specified path Download PDFInfo
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- CN110938807A CN110938807A CN201911174232.8A CN201911174232A CN110938807A CN 110938807 A CN110938807 A CN 110938807A CN 201911174232 A CN201911174232 A CN 201911174232A CN 110938807 A CN110938807 A CN 110938807A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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Abstract
The invention discloses a control method and a system for returning a wafer of PVD sputtering equipment to a disk according to a specified path, wherein the control method comprises the following steps: selecting a source chamber and a target chamber, and selecting a tray position of the source chamber and a tray position of the target chamber; selecting a process recipe, wherein the process recipe comprises process parameters to be executed when a target wafer is transmitted from a source chamber to a target chamber; after the disk transmission is confirmed to be started, generating and executing a first subtask, and monitoring the state of the first subtask; and when the first subtask is finished, generating and executing a second subtask until the Nth subtask is finished, wherein N is a natural number, and completing the disc returning operation of the target wafer from the source chamber to the target chamber. The invention has the advantages that the wafer processed in the process chamber is transferred from the process chamber to the cooling chamber and then to the loading and unloading chamber, only one key is needed for operation, the work task of an operator is reduced, and the execution efficiency of the task is improved.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a method and a system for controlling a wafer of PVD sputtering equipment to return to a disc according to a specified path.
Background
Physical Vapor Deposition (PVD) is to use low-voltage and high-current arc discharge technology under vacuum condition to evaporate a target material by gas discharge and ionize evaporated substances and gas, and to deposit the evaporated substances and reaction products thereof on a workpiece by the acceleration of an electric field.
The sputtering apparatus uses a Physical Vapor Deposition (PVD) method to sputter a thin film on a substrate, which is performed at a high temperature, requiring a heater to preheat a wafer on a tray to a process temperature. The substrate must be effectively cooled after the high-temperature coating to be taken out of the sputtering device. A typical sputtering apparatus comprises 4 chambers, a loading and unloading chamber, a transmission chamber, a process chamber and a cooling chamber. The complete coating process comprises the following procedures that a tray bearing the wafer is loaded by a loading cavity and then is transmitted to a process cavity through a transmission cavity, the process cavity is subjected to high-temperature coating and then is transmitted to a cooling cavity through the transmission cavity, and the cooled cooling cavity is transmitted to a loading and unloading cavity through the transmission cavity to unload and take out the wafer. As shown in fig. 1. The time of the cooling process has an important influence on the productivity of the machine, and the cooling time required for the machine at present is 6-10 min. The temperature of the cooled tray is also critical and is typically below 60 ℃.
After the tray bearing the wafer is abnormally terminated in the process of performing high-temperature coating on the process cavity, the tray can be conveyed back to the loading and unloading cavity from the cooling cavity by cooling the tray through the cooling cavity before the tray is conveyed to the loading and unloading cavity, the personnel operating the equipment needs to perform two manual transmission operations from the process cavity to the cooling cavity and the cooling cavity to the loading and unloading cavity in sequence, and in addition, if the misoperation of the operator occurs, the system cannot feed back to the operator in time, but waits for the transmission preparation, the system can give an alarm.
Therefore, a simple operation mode is desired, which reduces the work task of the operator and reduces the misoperation.
Disclosure of Invention
The invention aims to provide a control method and a control system for returning a wafer of PVD sputtering equipment to a disk according to a specified path, which realize one-key operation, reduce the work task of operators and reduce misoperation.
In order to achieve the above purpose, the present invention provides a method for controlling a wafer of a PVD sputtering apparatus to return to a disk according to a specified path, comprising the following steps:
selecting a source chamber and a target chamber, and selecting a tray position of the source chamber and a tray position of the target chamber;
selecting a process recipe comprising process parameters to be performed by a target wafer transferred from the source chamber to the destination chamber;
after the disk transmission is confirmed to be started, generating and executing a first subtask, and monitoring the state of the first subtask; and when the first subtask is finished, generating and executing a second subtask until an Nth subtask is finished, wherein N is a natural number, and completing the disc returning operation of the target wafer from the source chamber to the target chamber.
Optionally, selecting a process chamber as a source chamber and selecting a loading and unloading chamber as a target chamber;
selecting a cooling recipe as a process recipe, wherein the cooling recipe is a process parameter to be executed by a cooling chamber of the target wafer in the disk-returning operation.
Optionally, the first subtask includes: transferring a target wafer from the process chamber to the cooling chamber;
the second subtask includes: performing a cooling process operation on the target wafer in the cooling chamber;
the third subtask includes: and conveying the target wafer from the cooling chamber to the loading and unloading chamber.
Optionally, before the target wafer is transported to the cooling chamber, selecting a tray position of the cooling chamber is further included.
Optionally, the PVD sputtering apparatus is used for sputtering aluminum nitride films.
The invention also provides a system for returning the wafer of the PVD sputtering equipment to the disc according to the specified path, which comprises:
the information feed-in module is used for inputting task information by an operator;
the task generating module sequentially generates a plurality of subtasks according to the received task information;
the task execution module is used for sequentially executing each subtask generated by the task generation module and finishing the corresponding operation steps;
and the monitoring module is used for monitoring the execution state of the current subtask and controlling the task generating module to generate the next subtask or not according to the state of the current subtask.
Optionally, the task information includes: a source chamber, a target chamber, and a process recipe are selected.
Optionally, the system comprises:
the process chamber is used as the source chamber in the target wafer returning process;
a loading and unloading chamber which is used as the target chamber in the target wafer returning process;
a cooling chamber in which the process recipe is executed during a process of transferring the target wafer from the process chamber back to the load and unload chamber.
Optionally, the subtasks sequentially generated by the task generating module include:
the first subtask: transferring a target wafer from the process chamber to the cooling chamber;
the second subtask: performing a cooling process operation on the target wafer in the cooling chamber;
the third subtask: and conveying the target wafer from the cooling chamber to the loading and unloading chamber.
Optionally, trays are disposed in the process chamber, the cooling chamber, and the loading and unloading chamber, and the task information further includes: selecting the position of a process chamber tray, selecting the position of a cooling chamber tray, and selecting the position of a loading and unloading chamber tray.
The invention has the beneficial effects that:
when the tray for bearing the wafer is abnormally terminated in the high-temperature coating process of the process cavity and the wafer needs to be transferred to the loading and unloading cavity, an operator does not need to sequentially perform two manual transmission operations from the process cavity to the cooling cavity and from the cooling cavity to the loading and unloading cavity, the operator only needs to select the cavity where the wafer is located and a target cavity, select a process formula and click a transmission button to complete one-key disk returning operation, the transmission process of the wafer is monitored by software, the work tasks of the operator are reduced, misoperation is reduced, the waiting time is shortened, and the execution efficiency of the tasks is improved.
The present invention has other features and advantages which will be apparent from or are set forth in detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings, in which like reference numerals generally represent like parts.
Fig. 1 shows a flowchart of a method for controlling a PVD sputtering apparatus to return a wafer to a disk according to a designated path according to an embodiment of the present invention.
FIG. 2 is a human-machine interface of a system for returning a wafer to a disk along a designated path in a PVD sputtering apparatus according to an embodiment of the invention.
FIG. 3 is a human-machine interface of a system for returning a wafer to a disk along a designated path in a PVD sputtering apparatus according to an embodiment of the invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
An embodiment of the present invention provides a method for controlling a wafer of a PVD sputtering apparatus to return to a disk according to a specified path, where fig. 1 is a flowchart of the method for controlling the wafer of the PVD sputtering apparatus to return to the disk according to the specified path, and referring to fig. 1, the method for controlling the wafer of the PVD sputtering apparatus to return to the disk according to the specified path includes:
selecting a source chamber and a target chamber, and selecting a tray position of the source chamber and a tray position of the target chamber;
selecting a process recipe, wherein the process recipe comprises process parameters to be executed by transferring a target wafer from a source chamber to a target chamber;
after the disk transmission is confirmed to be started, generating and executing a first subtask, and monitoring the state of the first subtask; and when the first subtask is finished, generating and executing a second subtask until the Nth subtask is finished, wherein N is a natural number, and completing the disc returning operation of the target wafer from the source chamber to the target chamber.
Specifically, a typical sputtering apparatus station includes 4 chambers, a load lock chamber, a transfer chamber, a process chamber, and a cool down chamber. The transfer chamber is communicated with other chambers and is used for transferring the tray carrying the wafer among the chambers. The normal and complete coating process comprises the following steps that a tray bearing wafers is loaded by a loading chamber and then is transmitted to a process chamber through a transmission chamber, the wafers are subjected to high-temperature coating in the process chamber, the coated wafers are transmitted to a cooling chamber through the transmission chamber after the coating is finished, the temperature of the coated wafers is reduced in the cooling chamber, and the cooled wafer tray is transmitted to a loading and unloading chamber through the transmission chamber to be unloaded and taken out of the wafers. After the operating program is preset in the sputtering equipment, the intervention of operators is not needed in the process. However, when the process is abnormally terminated, the operator is required to perform step-by-step control on each operation of the pallet. The following embodiments provide a method for returning a wafer by one key, and an operator only needs to input an instruction once to realize the operation of returning the wafer according to a specified path.
This embodiment takes the abnormality of the wafer during sputtering the aluminum nitride film in the process chamber as an example, and describes how to return the tray carrying the wafer to the load/unload chamber by a key return operation. Firstly, a source cavity and a tray position in the source cavity and a tray position in a target cavity and a target cavity are selected, the source cavity is a cavity with abnormal process, a plurality of positions for placing trays are arranged in the source cavity, and the position of a wafer tray with abnormal process is selected. If the PVD sputtering equipment has a plurality of process chambers, the process chamber with abnormal process can be selected, and for the equipment with the loading chamber and the unloading chamber which are two separated chambers, the unloading chamber can be selected. A process recipe, which is a parameter of the process to be performed on the wafer, in this example, a parameter of the cooling performed in the cooling chamber, is then selected. After the setting is finished, the system confirms to start to transmit the disk, generates and executes a first subtask, monitors the working state of the first subtask, does not generate a second subtask before the first subtask is not finished, and does not generate the second subtask if the execution of the task fails. When the currently executed Nth sub-task (N is a natural number) is monitored to be finished, the system generates and executes the next sub-task until the wafer tray is conveyed to the target chamber. In this embodiment, when the task end flag "Complete" is detected, the current subtask ends, and the generation of the next subtask is dynamically triggered. Each subtask is each step of the operation on the wafer, if only 2 steps of the operation are performed on the wafer, the number of the subtasks is 2, and 3 times of the operation on the wafer are required, the number of the subtasks is 3, in this example, the first subtask includes: the target wafer is transferred from the process chamber to the cooling chamber. The second subtask includes: and carrying out a cooling process operation on the target wafer in the cooling chamber. The third subtask includes: and conveying the target wafer from the cooling chamber to the loading and unloading chamber. And selecting the tray position of the cooling chamber, and finishing the tray transferring operation after the three subtasks are executed. The PVD sputtering apparatus of the present example was used to sputter an aluminum nitride film.
An embodiment of the present invention further provides a system for returning a wafer of a PVD sputtering apparatus along a designated path, including:
the information feed-in module is used for inputting task information by an operator;
the task generating module sequentially generates a plurality of subtasks step by step according to the received task information;
the task execution module is used for sequentially executing each subtask generated by the task generation module and finishing the corresponding operation steps;
and the monitoring module is used for monitoring the execution state of the current subtask and controlling whether the task generating module generates the next subtask or not according to the state of the current subtask.
Specifically, the information feed-in module is used for transmitting information, an operator issues an operation task by inputting task information, and the information feed-in module can be a human-computer interaction interface. The task generation module is used for generating a plurality of subtasks step by step from the received total task, the number of the subtasks is determined by the operation steps of the wafers, each pair of wafers needs one corresponding subtask in one operation, and the plurality of subtasks are dynamically generated step by step according to the time sequence relation. The task execution module is used for executing each subtask generated by the task generation module, and the task execution module immediately executes the task after the subtask is generated. The monitoring module is used for monitoring the execution state of the current subtask, when the monitoring module monitors that the current subtask is finished, the monitoring module controls the task generating module to generate the next subtask, the executing module starts to execute the subtask, and when the current subtask is not finished or is abnormal, the task generating module does not generate the next subtask.
The system in this embodiment further includes: the process chamber is used as a source chamber in the target wafer returning process; the loading and unloading chamber is used as a target chamber in the target wafer returning process; and a cooling chamber, wherein the target wafer executes the process formula in the cooling chamber in the process of returning from the process chamber to the loading and unloading chamber. And the process chamber, the cooling chamber and the loading and unloading chamber are all provided with trays.
In this embodiment, the operation process of each module will be described by taking the example of transferring the tray loaded with the wafer in the process chamber to the loading/unloading chamber. The transmission path of the wafer tray is a process chamber, a cooling chamber and a loading and unloading chamber. Firstly, an operator inputs task information through a human-computer interaction interface, referring to fig. 2 and 3, the input information is that a source chamber is selected as a process chamber, and the position of a process chamber tray is selected; selecting a target cavity as a loading and unloading cavity, and selecting the position of a loading and unloading cavity tray; a cooling recipe is selected, wherein the cooling recipe is a process parameter to be executed by a cooling chamber of a target wafer in a disk returning operation, and the position of a cooling chamber tray is selected. After a transmission button (Start Move) is clicked, the task generation module generates a first subtask: the method comprises the following steps that a target wafer is conveyed from a process chamber to a cooling chamber, a task execution module executes a first subtask, a monitoring module monitors the execution state of the current subtask in the execution process of the subtask, and when the fact that the first subtask is finished is monitored, a task generation module generates a second subtask: and carrying out a cooling process operation on the target wafer in the cooling chamber. The task execution module executes the second subtask, the monitoring module monitors the execution state of the second subtask, and when the second subtask is monitored to be finished, the task generation module generates a third subtask: and conveying the target wafer from the cooling chamber to the loading and unloading chamber, executing a third subtask by the task execution module, and finishing the total task after the third subtask is executed.
In summary, according to the control method and the control system for the wafer return according to the designated path of the PVD sputtering apparatus provided by the invention, after the operator inputs the task information, the system generates and sequentially executes a plurality of sub-tasks formed step by step, and the execution state of the task is monitored by software, so that the intervention of the operator is not required in the task execution process, the work task of the operator is reduced, the misoperation is reduced, the waiting time is reduced, and the task execution efficiency is improved.
The embodiments of the present invention described above are exemplary, not exhaustive, and are not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. A control method for a PVD sputtering device to return a wafer according to a specified path is characterized by comprising the following steps:
selecting a source chamber and a target chamber, and selecting a tray position of the source chamber and a tray position of the target chamber;
selecting a process recipe comprising process parameters to be performed by a target wafer transferred from the source chamber to the destination chamber;
after the disk transmission is confirmed to be started, generating and executing a first subtask, and monitoring the state of the first subtask; and when the first subtask is finished, generating and executing a second subtask until an Nth subtask is finished, wherein N is a natural number, and completing the disc returning operation of the target wafer from the source chamber to the target chamber.
2. The PVD sputtering apparatus control method of wafer backtracking along a designated path as recited in claim 1, wherein a process chamber is selected as a source chamber, and a load/unload chamber is selected as a destination chamber;
selecting a cooling recipe as a process recipe, wherein the cooling recipe is a process parameter to be executed by a cooling chamber of the target wafer in the disk-returning operation.
3. The PVD sputtering apparatus wafer re-mastering control method according to claim 2, wherein the first sub-task comprises: transferring a target wafer from the process chamber to the cooling chamber;
the second subtask includes: performing a cooling process operation on the target wafer in the cooling chamber;
the third subtask includes: and conveying the target wafer from the cooling chamber to the loading and unloading chamber.
4. The PVD sputtering apparatus wafer re-mastering control method according to claim 3, wherein before the target wafer is transported to the cooling chamber, selecting a tray position of the cooling chamber is further included.
5. The PVD sputtering apparatus as recited in claim 1, wherein the PVD sputtering apparatus is adapted to sputter an aluminum nitride film.
6. A system for returning a wafer of a PVD sputtering device to a disc according to a specified path is characterized by comprising:
the information feed-in module is used for inputting task information by an operator;
the task generating module sequentially generates a plurality of subtasks according to the received task information;
the task execution module is used for sequentially executing each subtask generated by the task generation module and finishing the corresponding operation steps;
and the monitoring module is used for monitoring the execution state of the current subtask and controlling the task generating module to generate the next subtask or not according to the state of the current subtask.
7. The PVD sputtering apparatus wafer re-mastering system of claim 6, wherein the task information comprises: a source chamber, a target chamber, and a process recipe are selected.
8. The PVD sputtering apparatus wafer re-mastering system of claim 7, comprising:
the process chamber is used as the source chamber in the target wafer returning process;
a loading and unloading chamber which is used as the target chamber in the target wafer returning process;
a cooling chamber in which the process recipe is executed during a process of transferring the target wafer from the process chamber back to the load and unload chamber.
9. The PVD sputtering apparatus system of claim 8, wherein the tasks sequentially generated by the task generation module comprise:
the first subtask: transferring a target wafer from the process chamber to the cooling chamber;
the second subtask: performing a cooling process operation on the target wafer in the cooling chamber;
the third subtask: and conveying the target wafer from the cooling chamber to the loading and unloading chamber.
10. The system for returning the wafer to the PVD sputtering apparatus according to the designated path as recited in claim 9, wherein the process chamber, the cooling chamber, and the loading/unloading chamber are all provided with trays, and the task information further comprises: selecting the position of a process chamber tray, selecting the position of a cooling chamber tray, and selecting the position of a loading and unloading chamber tray.
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