CN110931653A - Display panel and preparation method thereof - Google Patents

Display panel and preparation method thereof Download PDF

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Publication number
CN110931653A
CN110931653A CN201911177912.5A CN201911177912A CN110931653A CN 110931653 A CN110931653 A CN 110931653A CN 201911177912 A CN201911177912 A CN 201911177912A CN 110931653 A CN110931653 A CN 110931653A
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layer
electrode layer
substrate
display panel
light emitting
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CN110931653B (en
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万之君
李金川
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses a display panel and a preparation method thereof, wherein the display panel comprises a substrate, a first electrode layer, a light-emitting layer, a pixel definition layer, a second electrode layer and an auxiliary electrode layer, wherein the pixel definition layer comprises a retaining wall and an opening area, the second electrode layer covers the pixel definition layer and the light-emitting layer, the auxiliary electrode layer is arranged on the second electrode layer, and the orthographic projection of the auxiliary electrode layer on the substrate completely falls into the orthographic projection of the retaining wall on the substrate; the display panel can solve the problem of overlarge resistance of the second electrode layer and can also ensure the light-emitting rate of the display panel; the preparation method of the display panel can directly realize transfer printing while forming a patterned transfer printing film layer by adjusting the thickness of the pixel defining layer, thereby simplifying the manufacturing process.

Description

Display panel and preparation method thereof
Technical Field
The invention relates to the technical field of display panels, in particular to a display panel and a preparation method thereof.
Background
Organic electroluminescent (OLED) display devices mainly include a bottom emission type (emitting light downward with respect to a substrate) and a top emission type (emitting light upward with respect to a substrate). Compared with a bottom-emitting OLED, the light of the top-emitting OLED directly penetrates out of the device without passing through the substrate, the light-emitting area of the device cannot be influenced by the design of the pixel circuit on the substrate, the competition between the area of the TFT and the metal circuit and the light-emitting area is avoided, the aperture opening ratio of the panel can be effectively improved, and the high-brightness and high-resolution OLED display panel is prepared. Meanwhile, the top-emitting OLED has lower working voltage under the same brightness, so that the service life of a light-emitting device is longer, and the power consumption is lower.
In the top-emitting OLED display device, since light needs to pass through the cathode of the device, the transparency of the cathode needs to be increased in order to ensure the light extraction rate. Currently, in top-emitting OLED devices, low work function metals or alloys (such as Ag or MgAg alloys), or transparent conductive oxides (TCO, such as IZO) are typically used for the cathode. In order to avoid the influence of the cathode on the light extraction rate, when metal or alloy is used as the cathode of the device, the cathode needs to be made thinner; TCO is adopted, and the material does not need to be made to be thin due to high transparency of the material. However, the cathode of the above two materials inevitably has the problem of overlarge resistance of the cathode.
For a large-size top-emitting OLED display panel, the voltage Drop (IR-Drop) at the position, which is far away from the power supply, of the panel is more serious due to the overlarge cathode resistance of the device, so that the brightness difference between the periphery and the center of the panel is large, and finally the phenomenon of serious uneven brightness of the panel is caused. Meanwhile, the panel generates too much heat at the too bright part of the panel, which can affect the normal operation of the TFT substrate. In addition, the cathode resistance is too large, which causes the driving voltage of the OLED device to be large and the power consumption of the panel to be increased.
FIGS. 1A-1B are schematic diagrams of a conventional auxiliary cathode preparation process. As shown in fig. 1A and 1B, the conventional auxiliary cathode is prepared by the following steps: 1) a step of patterning the printing film layer 71 formed on the transfer roller 200 by using a printing plate 300 to form a patterned printing film layer 72; 2) transferring the patterned printing film layer 72 on the transfer roller 200 to a display substrate 101.
As can be seen, the conventional preparation process of the auxiliary cathode is complicated, and the transfer printing process of the patterned printing film layer 72 requires high alignment precision.
Therefore, it is desirable to provide a display panel and a method for manufacturing the same to solve the above problems.
Disclosure of Invention
The display panel of the invention can solve the problem of overlarge resistance of the second electrode layer of the device and ensure the light extraction rate by arranging the auxiliary electrode layer in the non-luminous area and utilizing the parallel connection of the auxiliary electrode layer and the second electrode layer.
According to the preparation method of the display panel, the auxiliary electrode layer can be directly formed by transfer printing while the patterned transfer printing film layer is formed by adjusting the thickness of the pixel defining layer.
In order to achieve the above purpose, the display panel and the manufacturing method thereof of the present invention adopt the following technical methods.
The present invention provides a display panel including: a substrate; a first electrode layer disposed on the substrate; a pixel defining layer disposed on the first electrode layer, the pixel defining layer including a plurality of retaining walls and an opening region exposing the first electrode layer; a light emitting layer positioned in the opening region and covering the first electrode layer; a second electrode layer disposed on the light emitting layer and covering the pixel defining layer and the light emitting layer; and the auxiliary electrode layer is arranged on the second electrode layer, and the orthographic projection of the auxiliary electrode layer on the substrate completely falls into the orthographic projection of the retaining wall on the substrate.
Further, the thickness range of the pixel definition layer is 1 um-3 um.
Further, the retaining wall comprises a first retaining wall and a second retaining wall which are sequentially arranged along the direction deviating from the substrate, wherein the side edge of the first retaining wall is opposite to the inclination angle theta of the substrate1Is less than the inclination angle theta of the side edge of the second retaining wall relative to the substrate2。
Further, the thickness ratio of the first retaining wall to the second retaining wall ranges from 0.2 to 0.5.
Furthermore, the orthographic projection of the second retaining wall on the substrate completely falls into the range of the orthographic projection of the first retaining wall on the substrate.
Further, the inclination angle θ1And the angle of inclination is theta2The ranges of (A) and (B) are the same and are each independently from 30 ℃ to 60 ℃.
Further, the display panel further comprises an organic layer, wherein the organic layer is located between the light-emitting layer and the second electrode layer and covers the light-emitting layer and the pixel defining layer.
The invention also provides a preparation method of the display panel, which comprises the following steps:
providing a substrate and preparing a first electrode layer on the substrate;
a step of preparing a pixel defining layer on the first electrode layer, the pixel defining layer including a plurality of retaining walls and an opening area, the opening area exposing the first electrode layer, and the pixel defining layer having a thickness ranging from 1um to 3 um;
a step of preparing a light emitting layer on the pixel defining layer, the light emitting layer being located in the opening area and covering the first electrode layer;
a step of preparing a second electrode layer on the light emitting layer, the second electrode layer being on the light emitting layer and covering the pixel defining layer and the light emitting layer; and the number of the first and second groups,
preparing an auxiliary electrode layer on the second electrode layer, wherein the orthographic projection of the auxiliary electrode layer on the substrate completely falls into the orthographic projection of the retaining wall on the substrate;
and wherein the process of preparing the auxiliary electrode layer comprises at least the steps of:
step S1, preparing a transfer film layer for preparing the auxiliary electrode layer on a transfer roller;
and step S2, controlling the transfer roller with the transfer film layer formed thereon to contact the second electrode layer for transfer so as to pattern transfer the transfer film layer onto the second electrode layer to form the auxiliary electrode layer.
Further, in the step S1, the material for preparing the transfer film layer is a nano conductive ink, and the nano conductive ink is at least one of a metal nano ink or a carbon nanotube ink.
Further, in the step S1, the thickness of the transfer film layer is less than 1 um.
Further, the preparation method of the display panel further comprises the following steps: a step of preparing an organic layer between the light emitting layer and the second electrode layer, the organic layer covering the light emitting layer and the pixel defining layer.
The display panel and the preparation method thereof have the beneficial effects that:
according to the display panel, the auxiliary electrode layer is arranged on the second electrode layer, so that the problems of overlarge resistance of the second electrode layer of the light-emitting device and serious panel voltage Drop (IR-Drop) can be solved, and the uniformity of the display panel is improved; meanwhile, the auxiliary electrode layer is arranged in the non-luminous area of the display panel, so that the light emitting rate of the display panel can be ensured.
According to the preparation method of the display panel, the thickness of the pixel definition layer is adjusted, so that the transfer printing can be directly realized while the patterned transfer printing film layer is formed, and further, the adoption of a printing plate, the patterning of the transfer printing film layer and the subsequent high-precision alignment operation can be avoided, so that the production cost can be reduced, and the production flow can be simplified; by adjusting the inclination angle of the retaining wall, the second electrode layer can be prevented from being broken.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
FIGS. 1A-1B are schematic diagrams of a conventional auxiliary cathode preparation process.
FIG. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the invention.
Fig. 3 is a top view of fig. 2.
FIG. 4 is a schematic view of a process for preparing an auxiliary electrode layer according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
The invention provides a display panel. FIG. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the invention. Fig. 3 is a top view of fig. 2. As shown in fig. 2 and fig. 3, the display panel 100 of the present invention includes a plurality of light emitting regions 100a and a plurality of non-light emitting regions 100b, wherein the non-light emitting regions 100b are disposed at the periphery of the light emitting regions 100 a.
As shown in fig. 2, the display panel 100 includes a substrate 10, a first electrode layer 20, a pixel defining layer 30, a light emitting layer 40, a second electrode layer 60, and an auxiliary electrode layer 70, which are sequentially stacked in a direction perpendicular to the substrate 10. Wherein the auxiliary electrode layer 70 is located in the non-light emitting region 100b of the display panel 100 and connected in parallel with the second electrode layer 60.
By disposing the auxiliary electrode layer 70 in the non-light emitting region 100b and using the parallel connection of the second electrode layer 60 and the auxiliary electrode layer 70, the display panel 100 of the invention can solve the problems of the second electrode layer 60 of the light emitting device, such as excessive resistance and serious panel voltage Drop (IR-Drop), improve the uniformity of the display panel 100, and ensure the light emitting rate of the display panel 100.
The substrate 10 is an array substrate. The array substrate comprises a substrate and a thin film transistor layer positioned on the substrate. Wherein, the material of the substrate base plate can be at least one of glass, quartz, resin or PI.
As shown in fig. 2, the first electrode layer 20 is disposed on the substrate 10. Specifically, the first electrode layer 20 includes a plurality of first electrode blocks (not shown) arranged in an array on the substrate 10. The size and shape of the first electrode block are conventional in the art and are not limited in this application. In a specific implementation, the first electrode block is used as an electrode of a light emitting device, and can be a cathode or an anode. For example, in the present embodiment, the first electrode block serves as an anode of the light emitting device.
As shown in fig. 2, the pixel defining layer 30 is disposed on the substrate 10. The pixel definition layer 30 includes a plurality of retaining walls 31 and a plurality of opening regions 32 surrounded by the retaining walls 31, and the opening regions 32 expose the first electrode layer 20.
Referring to fig. 2, the retaining walls 31 are disposed on the substrate 10 and are used for separating the first electrode blocks of the first electrode layer 10 from each other. That is, the dam 31 corresponds to the non-light emitting region 100b of the display panel 100.
In this embodiment, the retaining walls 31 are disposed on the substrate 10 and the first electrode layer 20. Specifically, the retaining wall 31 is adjacent to the first electrode block or the retaining wall 31 covers the peripheral area of the first electrode block.
Specifically, the thickness of the pixel defining layer ranges from 1um to 3 um. The length of the retaining wall 31 extending in a direction away from the substrate 10 ranges from 1um to 3 um. By adjusting the thickness of the retaining walls 31, the display panel 100 of the invention increases the difference between the terrain heights of the non-light-emitting areas 100b and the light-emitting areas 100a relative to the substrate 10, so that the transfer film layer 71 which is not patterned can be prevented from being transferred into the light-emitting areas 100a when the auxiliary electrode layer 70 is formed by transfer.
Referring to fig. 2, in the embodiment, the retaining wall 31 includes a first retaining wall 311 and a second retaining wall 312 sequentially disposed along a direction away from the substrate 10, and a thickness ratio of the first retaining wall 311 to the second retaining wall 312 ranges from 0.2 to 0.5. Accordingly, the open area 32 includes a first open area defined by the first retaining wall 311 and a second open area defined by the second retaining wall 312.
In the present embodiment, the second barrier wall 312 is disposed on the display panel 100, so that the overall thickness of the barrier wall 31 can be adjusted, and the difference between the heights of the non-light-emitting areas 100b and the light-emitting areas 100a relative to the substrate 10 can be increased.
Referring to fig. 2, the side of the first retaining wall 311 has an inclination angle θ relative to the substrate 101Is smaller than the inclined angle theta of the side edge of the second retaining wall 312 relative to the substrate 102. The display panel 100 of the present invention is formed by defining the inclination angle θ1Less than the angle of inclination theta2The second electrode layer 60 is prevented from being broken near the dam wall 31, thereby preventing the light emitting device from being short-circuited.
In this embodiment, the cross section of the first retaining wall 311 and the second retaining wall 312 in the direction perpendicular to the substrate 10 is trapezoidal, and the inclined angle θ of the inclined side of the first retaining wall 311 relative to the substrate 101Is smaller than the inclined angle theta of the inclined edge of the second retaining wall 312 relative to the substrate 102. In specific implementation, the inclination angle theta1And the angle of inclination theta2The ranges of (A) and (B) are the same, and are respectively 30-60 ℃. By defining said angle of inclination theta1And the angle of inclination theta2The value range of (b) can further reduce the risk of the second electrode layer 60 breaking during film formation.
Referring to fig. 2, the orthographic projection of the second retaining wall 312 on the substrate 10 falls into the orthographic projection of the first retaining wall 311 on the substrate 10. Alternatively, the second open area can expose the periphery of the first open area. By forming the second retaining wall 312 with a smaller cross-sectional dimension on the first retaining wall 311, the second retaining wall 312 can form a buffer zone while adjusting the overall thickness of the retaining wall 31, so as to further prevent the transfer film layer 71 from entering the light emitting area 100a, and finally ensure that the auxiliary electrode layer 70 does not cover the light emitting area 100 a.
Referring to fig. 2 and 3, the opening region 32 is surrounded by the retaining walls 31 and exposes the first electrode layer 20. The opening area 32 is also referred to as a pixel area or a hollow area in practice. The opening area 32 corresponds to the light emitting area 100a to ensure that the light of the light emitting area 100a can penetrate out. Wherein the shape, size or number of the open areas 32 is conventional in the art. It should be noted that the opening area 32 is only schematically illustrated in the drawings, and the present invention does not limit the specific parameters of the opening area 32 as long as the object of the present invention is satisfied.
As shown in fig. 2, the light emitting layer 40 is disposed in the opening region 32 and covers the first electrode layer 20. Alternatively, the light emitting layer 40 is disposed on the pixel defining layer 30, and the light emitting layer 40 is positioned in the opening region 32 and covers the first electrode layer 20. That is, the projection of the light emitting layer 40 on the substrate 10 falls entirely within the orthogonal projection of the opening area 32 on the substrate 10.
Here, it should be noted that, first, the Light Emitting layer 40 may be an organic electroluminescent layer in an Organic Light Emitting Diode (OLED), or may be a quantum dot Light Emitting layer in a quantum dot Light Emitting device (quantum dot Light Emitting Diode, QLED), which is not limited in this respect, as long as the Light Emitting layer 40 has a function of Emitting Light.
As shown in fig. 2, the second electrode layer 60 is disposed on the light emitting layer 40 and the second electrode layer 60 covers the pixel defining layer 30 and the light emitting layer 40. Specifically, the second electrode layer 60 can be prepared by a full-surface evaporation method.
By covering the second electrode layer 60 with the light-emitting region 100a and the non-light-emitting region 100b, the display panel 100 of the invention can reduce the resistance of the second electrode layer 60 and facilitate the parallel connection of the second electrode layer 60 and the subsequent auxiliary electrode layer 70.
As shown in fig. 2, the auxiliary electrode layer 70 is disposed on the second electrode layer 60, and an orthographic projection of the auxiliary electrode layer 70 on the substrate 10 falls within an orthographic projection of the retaining wall 31 on the substrate 10. That is, the auxiliary electrode layer 70 is connected in parallel with the second electrode layer 60, and an orthogonal projection of the auxiliary electrode layer 70 on the substrate 10 does not overlap or intersect with an orthogonal projection of the opening area 32 on the substrate 10.
By providing the auxiliary electrode layer 70, the display panel 100 can prevent the problems of excessive resistance of the second electrode layer 60 and serious panel voltage Drop (IR-Drop) by using the parallel connection of the auxiliary electrode layer 70 and the second electrode layer 60, thereby improving the display uniformity; meanwhile, by disposing the auxiliary electrode layer 70 in the non-light emitting region 100b, the light extraction rate of the display panel 100 can be ensured.
In this embodiment, the auxiliary electrode layer 70 includes a plurality of auxiliary electrode blocks spaced apart from each other, and the auxiliary electrode blocks are disposed on the second electrode layer 60 and in the non-light emitting region 100a of the display panel 100. The second electrode layer 60 is a cathode, and the auxiliary electrode layer 70 serves as an auxiliary cathode.
Specifically, the auxiliary electrode layer 70 may be made of a metal nano-ink or a carbon nano-tube ink material. Wherein the metal nano-ink includes, but is not limited to, silver (Ag) nano-ink and gold (Au) nano-ink. In the present embodiment, the auxiliary electrode layer 70 is made of a silver (Ag) nano ink material.
As shown in fig. 2, the display panel 100 further includes at least one organic layer 50. The organic layer 50 is located between the light emitting layer 40 and the second electrode layer 60, and the organic layer 50 covers the light emitting layer 40 and the pixel defining layer 30. In the present embodiment, the organic layer 50 is an electron transport layer, and the electron transport layer is located between the light emitting layer 40 and the second electrode layer 60 and covers the light emitting layer 40 and the pixel defining layer 30.
In other embodiments, the display panel 100 further includes another organic layer between the first electrode layer 20 and the light emitting layer 40. In specific implementation, the another organic layer is at least one selected from a hole injection layer, a hole transport layer, a hole blocking layer, an electron injection layer, an electron transport layer, or an electron blocking layer according to the positive and negative polarities of the first electrode layer 20. For example, in the present embodiment, the first electrode layer 20 serves as an anode, and the other organic layer may serve as a functional layer such as an HIL, an HTL, or an EML.
The invention also provides a preparation method of the display panel, and the preparation method of the display panel can be used for preparing the display panel 100. Fig. 4 is a schematic view of a process for preparing an auxiliary electrode layer according to the present invention, and as shown in fig. 4, the method for preparing a display panel according to the present invention includes the following steps:
providing a substrate and preparing a first electrode layer on the substrate;
a step of preparing a pixel defining layer on the first electrode layer, the pixel defining layer including a plurality of retaining walls and an opening area, the opening area exposing the first electrode layer, and the pixel defining layer having a thickness ranging from 1um to 3 um;
a step of preparing a light emitting layer on the pixel defining layer, the light emitting layer being located in the opening area and covering the first electrode layer;
a step of preparing a second electrode layer on the light emitting layer, the second electrode layer being on the light emitting layer and covering the pixel defining layer and the light emitting layer; and the number of the first and second groups,
preparing an auxiliary electrode layer on the second electrode layer, wherein the orthographic projection of the auxiliary electrode layer on the substrate completely falls into the orthographic projection of the retaining wall on the substrate;
and wherein the process of preparing the auxiliary electrode comprises at least the steps of:
step S1, preparing a transfer film layer for preparing the auxiliary electrode layer on a transfer roller;
and step S2, controlling the transfer roller with the transfer film layer formed thereon to contact the second electrode layer for transfer so as to pattern transfer the transfer film layer onto the second electrode layer to form the auxiliary electrode layer.
The pattern transfer is understood to mean that the transfer film layer 71 (the transfer film layer 71 is not patterned) is only transferred to a partial area of a substrate to be transferred. That is, the transfer film layer 71 (the transfer film layer 71 is not patterned) is patterned in the transfer region on the substrate to be transferred. In other words, the transfer film layer 71 (the transfer film layer 71 is not patterned) is patterned after being transferred on the substrate to be transferred.
As shown in fig. 4, in step S2, after the transfer roller 200 is in contact with the second electrode layer 60 for transfer, a part of the transfer film layer 71 forms the patterned auxiliary electrode layer 70 on the second electrode layer 60, and another part of the transfer film layer 71 remains adhered to the transfer roller 200 to form the patterned transfer film layer 72.
According to the manufacturing method of the display panel, the topographic structure of the second electrode layer 60 can be adjusted by adjusting the thickness of the pixel defining layer 30, so that the transfer region of the transfer film layer 71 (the transfer film layer 71 is not patterned) on the second electrode layer 60 is controlled, and the auxiliary electrode layer 70 can be controlled to be located only in the non-light emitting region 100 b.
Therefore, the preparation method of the display panel can directly utilize the transfer film layer 71 (the transfer film layer 71 is not patterned) to form the auxiliary electrode layer 70 on the second electrode layer 60, and further can avoid the adoption of a printing plate, the patterning process of the transfer film layer 71 and the subsequent high-precision alignment operation, thereby reducing the production cost and simplifying the production flow.
In the step S1, the material forming the transfer film layer 71 is a nano conductive ink, and the nano conductive ink is at least one of a metal nano ink or a carbon nanotube ink. The metal nano-ink includes, but is not limited to, silver (Ag) nano-ink and gold (Au) nano-ink. The preparation method of the nano conductive ink belongs to common technical means in the field, and is not described herein again.
In the step S1, the thickness of the transfer film layer 71 is less than 1 um. By defining the thickness of the transfer 71, the possibility of the transfer film layer 71 entering the light emitting region 100a can be reduced. In a specific implementation, the thickness of the auxiliary electrode layer 70 may be increased by multiple transfer printing. That is, the thickness of the auxiliary electrode layer 70 can be increased by repeating the steps S1 and S2 a plurality of times.
In specific implementation, the thickness of the transfer film layer 71 may be 300nm or less than 300 nm.
In the step S2, it is noted that during the contact transfer between the transfer roller 200 and the second electrode layer 60, the transfer pressure is set according to the transfer condition (e.g., the material of the transfer film layer 71, the second electrode layer 60 or the transfer device, etc.) to ensure that the transfer film layer 71 can be detached from the transfer roller 200 and adhered to the second electrode layer 60, and at the same time, to prevent the transfer film layer 71 from being collapsed or entering the light emitting region 100 a. Generally speaking, the transfer pressure is greater than the surface bonding force of the transfer film 71 and the transfer roller 200, and the deformation amount of the transfer film 71 is less than 10%.
Specifically, the second electrode layer 60 can be prepared by evaporation. The light emitting layer 40 can be prepared by an ink jet printing method.
Specifically, the process of preparing the pixel defining layer 30 at least includes the following steps:
a. a step of forming the first retaining walls 311 on the first electrode layer 20; and a process for the preparation of a coating,
b. and forming the second retaining wall 312 on the first retaining wall 311.
Through the steps a and b, the pixel defining layer 30 shown in fig. 2 can be obtained. It is composed ofThe thickness ratio of the first retaining wall 311 to the second retaining wall 312 ranges from 0.2 to 0.5; the orthographic projection of the second retaining wall 312 on the substrate 10 completely falls into the orthographic projection range of the first retaining wall 311 on the substrate 10 far away from one side of the substrate 10, and the inclination angle of the side edge of the first retaining wall 311 relative to the substrate 10 is theta1Is smaller than the inclined angle theta of the side edge of the second retaining wall 312 relative to the substrate 102。
According to the preparation method of the display panel, the thickness and the structure of the retaining wall 31 are adjusted, so that the transfer film layer 71 can be prevented from entering the opening area 32 in the transfer process, and the auxiliary electrode layer 70 is ensured not to cover the light emitting area 100 a; the second electrode layer 60 can also be prevented from breaking, and the light emitting device can be prevented from short-circuiting.
In a specific implementation, the second retaining wall 312 and the first retaining wall 311 can be manufactured by a yellow light process, respectively.
The preparation method of the display panel further comprises the following steps: a step of preparing an organic layer 50 between the light emitting layer 40 and the second electrode layer 60, the organic layer 50 covering the light emitting layer and the pixel defining layer. The organic layer 50 may be prepared by a vacuum thermal evaporation method.
The organic layer 50 may be selected from at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron injection layer, an electron transport layer, or an electron blocking layer according to the positive and negative polarities of the second electrode layer 60. For example, in the present embodiment, the second electrode layer 60 serves as a cathode, and the organic layer 50 is an electron transport layer.
The preparation method of the display panel further comprises the following steps: a step of preparing another organic layer between the first electrode layer 20 and the light emitting layer 40. The further organic layer can be prepared by a process of ink jet printing.
The other organic layer can be selected from at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron injection layer, an electron transport layer, or an electron blocking layer depending on the positive or negative polarity of the first electrode layer 20. For example, in the present embodiment, the first electrode layer 20 serves as an anode, and the other organic layer may serve as a functional layer such as an HIL, an HTL, or an EML.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The display panel and the manufacturing method thereof provided by the embodiment of the present application are described in detail above, and the principle and the embodiment of the present application are explained by applying specific examples herein, and the description of the above embodiment is only used to help understanding the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (11)

1. A display panel, comprising:
a substrate;
a first electrode layer disposed on the substrate;
a pixel defining layer disposed on the first electrode layer, the pixel defining layer including a plurality of retaining walls and an opening region exposing the first electrode layer;
a light emitting layer positioned in the opening region and covering the first electrode layer;
a second electrode layer disposed on the light emitting layer and covering the pixel defining layer and the light emitting layer;
and the number of the first and second groups,
and the auxiliary electrode layer is arranged on the second electrode layer, and the orthographic projection of the auxiliary electrode layer on the substrate completely falls into the orthographic projection of the retaining wall on the substrate.
2. The display panel of claim 1, wherein the pixel defining layer has a thickness in a range of 1um to 3 um.
3. The display panel according to claim 2, wherein the retaining walls include a first retaining wall and a second retaining wall sequentially arranged along a direction departing from the substrate, and a side of the first retaining wall is inclined to the substrate at an angle θ1Is less than the inclination angle theta of the side edge of the second retaining wall relative to the substrate2。
4. The display panel according to claim 3, wherein the thickness ratio of the first retaining wall to the second retaining wall ranges from 0.2 to 0.5.
5. The display panel according to claim 3, wherein the orthographic projection of the second retaining wall on the substrate completely falls within the range of the orthographic projection of the first retaining wall on the substrate.
6. The display panel according to claim 3, wherein the inclination angle θ is1And the angle of inclination is theta2The ranges of (A) and (B) are the same and are each independently from 30 ℃ to 60 ℃.
7. The display panel according to claim 1, further comprising an organic layer between the light emitting layer and the second electrode layer and covering the light emitting layer and the pixel defining layer.
8. A preparation method of a display panel is characterized by comprising the following steps:
providing a substrate and preparing a first electrode layer on the substrate;
a step of preparing a pixel defining layer on the first electrode layer, the pixel defining layer including a plurality of retaining walls and an opening area, the opening area exposing the first electrode layer, and the pixel defining layer having a thickness ranging from 1um to 3 um;
a step of preparing a light emitting layer on the pixel defining layer, the light emitting layer being located in the opening area and covering the first electrode layer;
a step of preparing a second electrode layer on the light emitting layer, the second electrode layer being on the light emitting layer and covering the pixel defining layer and the light emitting layer; and the number of the first and second groups,
preparing an auxiliary electrode layer on the second electrode layer, wherein the orthographic projection of the auxiliary electrode layer on the substrate completely falls into the orthographic projection of the retaining wall on the substrate;
and wherein the process of preparing the auxiliary electrode layer comprises at least the steps of:
step S1, preparing a transfer film layer for preparing the auxiliary electrode layer on a transfer roller;
and step S2, controlling the transfer roller with the transfer film layer formed thereon to contact the second electrode layer for transfer so as to pattern transfer the transfer film layer onto the second electrode layer to form the auxiliary electrode layer.
9. The method for manufacturing a display panel according to claim 8, wherein in the step S1, a material for manufacturing the transfer film layer is a nano conductive ink, and the nano conductive ink is at least one of a metal nano ink or a carbon nanotube ink.
10. The method for manufacturing a display panel according to claim 8, wherein in the step S1, the thickness of the transfer film layer is less than 1 um.
11. The method for manufacturing a display panel according to claim 8, further comprising: a step of preparing an organic layer between the light emitting layer and the second electrode layer, the organic layer covering the light emitting layer and the pixel defining layer.
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112002822A (en) * 2020-08-11 2020-11-27 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN112259590A (en) * 2020-10-22 2021-01-22 合肥京东方卓印科技有限公司 Display panel, preparation method thereof and display device
CN112271182A (en) * 2020-09-12 2021-01-26 昆山工研院新型平板显示技术中心有限公司 Preparation method of display panel and display panel
CN112864338A (en) * 2021-01-12 2021-05-28 京东方科技集团股份有限公司 Display panel, display equipment and manufacturing method
CN112993182A (en) * 2021-02-05 2021-06-18 深圳市华星光电半导体显示技术有限公司 Display panel and display device
CN113097411A (en) * 2021-03-22 2021-07-09 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN113193147A (en) * 2021-04-27 2021-07-30 武汉华星光电半导体显示技术有限公司 Display panel and display device
CN113299702A (en) * 2021-05-08 2021-08-24 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN113488456A (en) * 2021-06-25 2021-10-08 深圳市华星光电半导体显示技术有限公司 Display device and manufacturing method thereof
CN114420859A (en) * 2021-11-29 2022-04-29 京东方科技集团股份有限公司 Display substrate, display device and preparation method of display substrate
US11374073B2 (en) 2020-08-11 2022-06-28 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel with auxiliary electrode and manufacturing method thereof
CN114706249A (en) * 2022-06-07 2022-07-05 惠科股份有限公司 Display panel and display device
WO2024065313A1 (en) * 2022-09-28 2024-04-04 京东方科技集团股份有限公司 Display panel and manufacturing method therefor, and display device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160233285A1 (en) * 2015-02-05 2016-08-11 Samsung Display Co., Ltd. Organic light emitting diode display and manufacturing method thereof
CN106531770A (en) * 2016-12-23 2017-03-22 京东方科技集团股份有限公司 Organic electroluminescent display panel, manufacturing method thereof and display device
CN107093680A (en) * 2017-05-04 2017-08-25 京东方科技集团股份有限公司 Metal auxiliary electrode and the manufacture method using its display device
EP3460850A1 (en) * 2017-09-25 2019-03-27 LG Display Co., Ltd. Display device having an auxiliary electrode
US10367044B2 (en) * 2016-01-05 2019-07-30 Samsung Dispiay Co., Ltd. Method of manufacturing organic light-emitting display apparatus
CN110112188A (en) * 2019-04-24 2019-08-09 深圳市华星光电半导体显示技术有限公司 The preparation method of display panel and display panel
CN110164930A (en) * 2019-05-22 2019-08-23 上海视涯信息科技有限公司 A kind of strong microcavity silicon-based organic light-emitting display device and forming method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160233285A1 (en) * 2015-02-05 2016-08-11 Samsung Display Co., Ltd. Organic light emitting diode display and manufacturing method thereof
US10367044B2 (en) * 2016-01-05 2019-07-30 Samsung Dispiay Co., Ltd. Method of manufacturing organic light-emitting display apparatus
CN106531770A (en) * 2016-12-23 2017-03-22 京东方科技集团股份有限公司 Organic electroluminescent display panel, manufacturing method thereof and display device
CN107093680A (en) * 2017-05-04 2017-08-25 京东方科技集团股份有限公司 Metal auxiliary electrode and the manufacture method using its display device
EP3460850A1 (en) * 2017-09-25 2019-03-27 LG Display Co., Ltd. Display device having an auxiliary electrode
CN110112188A (en) * 2019-04-24 2019-08-09 深圳市华星光电半导体显示技术有限公司 The preparation method of display panel and display panel
CN110164930A (en) * 2019-05-22 2019-08-23 上海视涯信息科技有限公司 A kind of strong microcavity silicon-based organic light-emitting display device and forming method thereof

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11374073B2 (en) 2020-08-11 2022-06-28 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel with auxiliary electrode and manufacturing method thereof
CN112002822A (en) * 2020-08-11 2020-11-27 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof
WO2022032741A1 (en) * 2020-08-11 2022-02-17 深圳市华星光电半导体显示技术有限公司 Display panel and manufacturing method therefor
CN112271182A (en) * 2020-09-12 2021-01-26 昆山工研院新型平板显示技术中心有限公司 Preparation method of display panel and display panel
CN112271182B (en) * 2020-09-12 2022-10-04 昆山工研院新型平板显示技术中心有限公司 Preparation method of display panel and display panel
CN112259590A (en) * 2020-10-22 2021-01-22 合肥京东方卓印科技有限公司 Display panel, preparation method thereof and display device
US11985864B2 (en) * 2020-10-22 2024-05-14 Hefei BOE Joint Technology Co., Lid. Display panel and method of manufacturing same, and display device
US20220130926A1 (en) * 2020-10-22 2022-04-28 Hefei Boe Joint Technology Co., Ltd. Display panel and method of manufacturing same, and display device
CN112864338A (en) * 2021-01-12 2021-05-28 京东方科技集团股份有限公司 Display panel, display equipment and manufacturing method
US11950442B2 (en) 2021-01-12 2024-04-02 Chengdu Boe Optoelectronics Technology Co., Ltd. Array substrate and manufacturing method thereof, display panel, and electronic apparatus
CN112993182A (en) * 2021-02-05 2021-06-18 深圳市华星光电半导体显示技术有限公司 Display panel and display device
CN113097411A (en) * 2021-03-22 2021-07-09 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof
CN113193147A (en) * 2021-04-27 2021-07-30 武汉华星光电半导体显示技术有限公司 Display panel and display device
CN113299702B (en) * 2021-05-08 2022-07-12 深圳市华星光电半导体显示技术有限公司 Display panel and preparation method thereof
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