CN110931598A - Manufacturing method of secondary annealed single crystal silicon SE-PERC battery - Google Patents
Manufacturing method of secondary annealed single crystal silicon SE-PERC battery Download PDFInfo
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- CN110931598A CN110931598A CN201911103064.3A CN201911103064A CN110931598A CN 110931598 A CN110931598 A CN 110931598A CN 201911103064 A CN201911103064 A CN 201911103064A CN 110931598 A CN110931598 A CN 110931598A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000007650 screen-printing Methods 0.000 claims abstract description 5
- 238000012360 testing method Methods 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005224 laser annealing Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a manufacturing method of a secondary annealed single crystal silicon SE-PERC battery, which comprises the steps of texturing, diffusing, front laser, etching, annealing, back passivation film, front passivation film, back laser, screen printing, sintering and testing, and is characterized in that: and adding a damage repairing annealing step after the front laser step and before the etching step. The laser annealing step is carried out after the front laser step, and the silicon wafer is placed in the tubular annealing furnace for annealing, so that the effect of repairing damage of front laser to the surface of the silicon wafer is achieved, the carrier recombination is reduced by passivating the surface, and the open-circuit voltage and the short current of the crystalline silicon battery are improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a manufacturing method of a secondary annealed single crystal silicon SE-PERC cell.
Background
With the rise of the monocrystalline silicon SE-PERC battery, laser is more widely applied in the preparation process of a crystalline silicon battery piece, and laser grooving, preparation of a selective emitter and the like can not leave the figure of the laser. Metal wrap-around back contact (MWT) and emitter penetration (EWT) techniques also require laser via holes to achieve. The traditional single crystal silicon SE-PERC battery manufacturing steps are as follows:
1. texturing: forming a suede surface on the surface of the P-type monocrystalline silicon wafer by using a wet process technology;
2. diffusion: forming a P-N junction by diffusion;
3. front laser: preparing a selective emitter, and heavily doping the surface of the silicon wafer by using laser;
4. etching: performing back polishing by using an HF/HNO3 solution, and removing phosphosilicate glass (PSG) formed in the front and back diffusion processes by using HF;
5. annealing: reactivating phosphorus atoms in the dead layer on the surface of the silicon wafer, and repairing dangling bonds to form a silicon dioxide layer;
6. back passivation film: preparing an aluminum oxide and silicon nitride film;
7. front passivation film: preparing a silicon nitride or silicon oxide passivation film, reducing the reflectivity and reducing the surface recombination speed of the silicon wafer;
8. back laser: forming a back contact;
9. screen printing: printing back silver paste, back aluminum paste and front silver paste;
10. and (3) sintering: forming an ohmic contact;
11. and (3) testing: the tablets were tested.
In the monocrystalline silicon SE-PERC battery, in the process of selecting an emitter through a front laser step, laser energy is in a Gaussian distribution form, relatively heavy damage can be generated in a laser action area, the original crystal lattice structure of the silicon wafer suede can be damaged, current carriers are compounded near a surface defect state, the open voltage and the short current of a crystalline silicon battery piece are reduced, and the photoelectric conversion efficiency of the monocrystalline silicon SE-PERC battery is reduced.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the front laser step breaks the lattice structure of the original silicon wafer suede to enable current carriers to be compounded near a surface defect state, so that the open voltage and the short current of a crystalline silicon cell are reduced, and the problem of the photoelectric conversion efficiency of the monocrystalline silicon SE-PERC cell is reduced.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a manufacturing method of a secondary annealed single crystal silicon SE-PERC battery comprises the steps of texturing, diffusion, front laser, etching, annealing, back passivation film, front passivation film, back laser, screen printing, sintering and testing, and is characterized in that:
a damage repairing annealing step is added after the front laser step and before the etching step, and the damage repairing annealing step comprises four procedures;
putting a silicon wafer into a tubular annealing furnace;
heating the annealing furnace to 650-750 ℃, and introducing nitrogen into the annealing furnace to ensure that each temperature zone is synchronously heated;
thirdly, after the temperature in the annealing furnace is stable, controlling the temperature in the annealing furnace to be 600-700 ℃, and simultaneously introducing oxygen and nitrogen into the annealing furnace;
and step four, after cooling and purging, taking the silicon wafer out of the annealing furnace.
Preferably, the flow rate of nitrogen introduced in the second procedure is 5.0-10.0 normal liters per minute.
Preferably, the flow rate of oxygen introduced into the third procedure is 100-400 standard milliliters per minute, the flow rate of nitrogen introduced into the third procedure is 3.5-9.0 standard liters per minute, and the time of the third procedure is controlled to be 5-12 minutes.
The invention has the beneficial effects that: through carrying out the damage repairing annealing step after the front laser step, the silicon wafer is placed in a tubular annealing furnace for annealing, so that the effect of repairing damage caused by the front laser to the surface of the silicon wafer is achieved, the surface is passivated, the recombination of current carriers is reduced, the open voltage and the short current of the crystalline silicon battery are improved, and through repeated experiments, the manufacturing method enables the photoelectric conversion efficiency of the monocrystalline silicon SE-PERC battery to have a gain of 0.05% -0.15%.
Drawings
FIG. 1 is a flow chart of the conventional single crystal silicon SE-PERC cell fabrication steps
FIG. 2 is a flow chart of the manufacturing steps of the present invention
FIG. 3 is a flow chart of a first annealing step of the present invention
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 2 to 3, a method for manufacturing a secondarily annealed single crystal silicon SE-PERC cell includes the steps of:
1. texturing: forming a suede surface on the surface of the P-type monocrystalline silicon wafer by using a wet process technology;
2. diffusion: forming a P-N junction by diffusion;
3. front laser: preparing a selective emitter, and heavily doping the surface of the silicon wafer by using laser;
4. first annealing: repairing the damage of the front laser to the surface of the silicon chip, passivating the surface and reducing the recombination of current carriers.
5. Etching: performing back polishing by using an HF/HNO3 solution, and removing phosphosilicate glass (PSG) formed in the front and back diffusion processes by using HF;
6. and (3) second annealing: reactivating phosphorus atoms in the dead layer on the surface of the silicon wafer, and repairing dangling bonds to form a silicon dioxide layer;
7. back passivation film: preparing an aluminum oxide and silicon nitride film;
8. front passivation film: preparing a silicon nitride or silicon oxide passivation film, reducing the reflectivity and reducing the surface recombination speed of the silicon wafer;
9. back laser: forming back contacts
10. Screen printing: and printing back silver paste, back aluminum paste and front silver paste, and sintering to form ohmic contact so as to complete the manufacturing process of the single crystal silicon SE-PERC battery.
11. And (3) sintering: forming an ohmic contact;
12. and (3) testing: the tablets were tested.
Wherein the first annealing step comprises the following procedures:
putting a silicon wafer into a tubular annealing furnace;
heating the annealing furnace to 700 ℃, and introducing nitrogen with the flow rate of 5.0 standard liters per minute into the annealing furnace;
thirdly, after the temperature in the annealing furnace is stable, controlling the temperature in the annealing furnace at 650 ℃, and simultaneously introducing oxygen with the flow rate of 100 standard milliliters per minute and nitrogen with the flow rate of 3.5 standard liters per minute into the annealing furnace, wherein the annealing time is 12 minutes;
and step four, after cooling and purging, taking the silicon wafer out of the annealing furnace.
The experimental data are as follows:
| type of experiment | Voc(mV) | Isc(A) | Rs(mΩ) | FF(%) | Eta(%) | Irev2(A) |
| Normal sheet | 680.1 | 10.137 | 1.9 | 81.17 | 22.22 | 0.065 |
| Experimental sheet | 681.5 | 10.162 | 1.9 | 81.15 | 22.34 | 0.076 |
According to experimental data, the open-pressure and short-flow advantages of the twice-annealed experimental piece are obvious compared with those of a normal-flow battery piece, and the experimental efficiency is improved by 0.12%.
It will be obvious to those skilled in the art that the present invention may be varied in many ways, and that such variations are not to be regarded as a departure from the scope of the invention. All such modifications as would be obvious to one skilled in the art are intended to be included within the scope of this claim.
Claims (3)
1. A manufacturing method of a secondary annealed single crystal silicon SE-PERC battery comprises the steps of texturing, diffusion, front laser, etching, annealing, back passivation film, front passivation film, back laser, screen printing, sintering and testing, and is characterized in that:
a damage repairing annealing step is added after the front laser step and before the etching step, and the damage repairing annealing step comprises four procedures;
putting a silicon wafer into a tubular annealing furnace;
heating the annealing furnace to 650-750 ℃, and introducing nitrogen into the annealing furnace to ensure that each temperature zone is synchronously heated;
thirdly, after the temperature in the annealing furnace is stable, controlling the temperature in the annealing furnace to be 600-700 ℃, and simultaneously introducing oxygen and nitrogen into the annealing furnace;
and step four, after cooling and purging, taking the silicon wafer out of the annealing furnace.
2. The method of manufacturing a secondary annealed single-crystal silicon SE-PERC cell according to claim 1, characterized in that: and in the second procedure, the flow rate of nitrogen is 5.0-10.0 normal liters per minute.
3. The method of manufacturing a secondary annealed single-crystal silicon SE-PERC cell according to claim 1, characterized in that: and in the third procedure, the flow of oxygen is 100-400 standard milliliters per minute, the flow of nitrogen is 3.5-9.0 standard liters per minute, and the time of the third procedure is controlled to be 5-12 minutes.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113066899A (en) * | 2021-03-23 | 2021-07-02 | 韩华新能源（启东）有限公司 | Laser-doped solar cell preparation process and solar cell |
| CN117352597A (en) * | 2023-12-05 | 2024-01-05 | 一道新能源科技股份有限公司 | Preparation method of solar cell, solar cell and electric equipment |
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Application publication date: 20200327 |