CN110931454B - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN110931454B CN110931454B CN201811092112.9A CN201811092112A CN110931454B CN 110931454 B CN110931454 B CN 110931454B CN 201811092112 A CN201811092112 A CN 201811092112A CN 110931454 B CN110931454 B CN 110931454B
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- China
- Prior art keywords
- layer
- conductive layer
- semiconductor
- semiconductor device
- semiconductor circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 233
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000015654 memory Effects 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 264
- 239000011229 interlayer Substances 0.000 description 25
- 238000009792 diffusion process Methods 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811092112.9A CN110931454B (zh) | 2018-09-19 | 2018-09-19 | 半导体装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811092112.9A CN110931454B (zh) | 2018-09-19 | 2018-09-19 | 半导体装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110931454A CN110931454A (zh) | 2020-03-27 |
CN110931454B true CN110931454B (zh) | 2023-11-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811092112.9A Active CN110931454B (zh) | 2018-09-19 | 2018-09-19 | 半导体装置及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN110931454B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220034273A (ko) | 2020-09-10 | 2022-03-18 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 이를 포함하는 전자 시스템 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102598254A (zh) * | 2009-10-23 | 2012-07-18 | 新思科技有限公司 | 用于硅通孔的esd/天线二极管 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6583440B2 (en) * | 2000-11-30 | 2003-06-24 | Seiko Epson Corporation | Soi substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the soi substrate, method of manufacturing the element substrate, and method of manufacturing the electro-optical apparatus |
TWI285410B (en) * | 2006-01-27 | 2007-08-11 | Ind Tech Res Inst | Interlayer interconnect of three-dimensional memory and method for manufacturing the same |
US9711555B2 (en) * | 2013-09-27 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual facing BSI image sensors with wafer level stacking |
-
2018
- 2018-09-19 CN CN201811092112.9A patent/CN110931454B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102598254A (zh) * | 2009-10-23 | 2012-07-18 | 新思科技有限公司 | 用于硅通孔的esd/天线二极管 |
Also Published As
Publication number | Publication date |
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CN110931454A (zh) | 2020-03-27 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: Tokyo Applicant after: Kaixia Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. Address after: Tokyo Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo Applicant before: Pangea Co.,Ltd. |
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CB02 | Change of applicant information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220216 Address after: Tokyo Applicant after: Pangea Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant |