CN110931422A - 一种介质层的沉积方法 - Google Patents
一种介质层的沉积方法 Download PDFInfo
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- CN110931422A CN110931422A CN201911110095.1A CN201911110095A CN110931422A CN 110931422 A CN110931422 A CN 110931422A CN 201911110095 A CN201911110095 A CN 201911110095A CN 110931422 A CN110931422 A CN 110931422A
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- dielectric layer
- annealing
- chemical vapor
- vapor deposition
- flowable chemical
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Formation Of Insulating Films (AREA)
Abstract
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Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201911110095.1A CN110931422B (zh) | 2019-11-13 | 2019-11-13 | 一种介质层的沉积方法 |
Applications Claiming Priority (1)
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CN201911110095.1A CN110931422B (zh) | 2019-11-13 | 2019-11-13 | 一种介质层的沉积方法 |
Publications (2)
Publication Number | Publication Date |
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CN110931422A true CN110931422A (zh) | 2020-03-27 |
CN110931422B CN110931422B (zh) | 2021-12-21 |
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CN201911110095.1A Active CN110931422B (zh) | 2019-11-13 | 2019-11-13 | 一种介质层的沉积方法 |
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CN (1) | CN110931422B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090043360A (ko) * | 2007-10-29 | 2009-05-06 | 주식회사 티지솔라 | 태양전지 제조방법 |
CN108987248A (zh) * | 2017-06-01 | 2018-12-11 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构及其形成方法 |
CN109166787A (zh) * | 2018-08-26 | 2019-01-08 | 合肥安德科铭半导体科技有限公司 | 一种氧化硅薄膜的可流动化学气相沉积方法 |
CN110391285A (zh) * | 2018-04-23 | 2019-10-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
-
2019
- 2019-11-13 CN CN201911110095.1A patent/CN110931422B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090043360A (ko) * | 2007-10-29 | 2009-05-06 | 주식회사 티지솔라 | 태양전지 제조방법 |
CN108987248A (zh) * | 2017-06-01 | 2018-12-11 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构及其形成方法 |
CN110391285A (zh) * | 2018-04-23 | 2019-10-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN109166787A (zh) * | 2018-08-26 | 2019-01-08 | 合肥安德科铭半导体科技有限公司 | 一种氧化硅薄膜的可流动化学气相沉积方法 |
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Publication number | Publication date |
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CN110931422B (zh) | 2021-12-21 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20211203 Address after: 710061 unit 1, building 1, Nonglin No. 1 community, Chang'an South Road, Yanta District, Xi'an City, Shaanxi Province 1901 Applicant after: Shaanxi Yuteng Electronic Technology Co.,Ltd. Address before: 221000 Quanshan science and Technology Park, National University of mining and technology, China University of mining and technology, north of Jinshan East Road, Xuzhou City, Jiangsu Province Applicant before: Xuzhou Shunyi Semiconductor Technology Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20230109 Address after: 727000 Building 11, Phase II, Optoelectronics Industrial Park, Weiba Road, New Material Industrial Park, Tongchuan City, Shaanxi Province Patentee after: Yuteng (Tongchuan) Semiconductor Co.,Ltd. Address before: 710061 unit 1, building 1, Nonglin No. 1 community, Chang'an South Road, Yanta District, Xi'an City, Shaanxi Province 1901 Patentee before: Shaanxi Yuteng Electronic Technology Co.,Ltd. |
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