CN110912411A - 非对称异型上、下管有源钳位反激变换器 - Google Patents
非对称异型上、下管有源钳位反激变换器 Download PDFInfo
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- CN110912411A CN110912411A CN201911215419.8A CN201911215419A CN110912411A CN 110912411 A CN110912411 A CN 110912411A CN 201911215419 A CN201911215419 A CN 201911215419A CN 110912411 A CN110912411 A CN 110912411A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
本发明专利是一种非对称异型上、下管有源钳位反激变换器,上管使用超结功率MOSFET管,下管使用GaN功率管。下管使用GaN功率管,充分发挥开关速度快,关断损耗小的特点;上管使用超结功率MOSFET管,减低成本。同时,由于上管使用更高导通电阻的器件,其寄生电容更小,从而减小原边电流下跌凹坑所产生的损耗。与目前市场上、下管或者同时采用超结功率MOSFET管,或者同时采用氮化镓GaN功率管相比较,本发明专利的整个装置既能充分发挥两种不同器件的特性,保障设备性能优化,又可降低成本。
Description
技术领域
本发明专利涉及一种上、下管使用不同类型器件和不同参数的有源钳位反激变换器。
背景技术
目前,高功率密度的手机快充和笔记本电脑适配器采用源钳位反激变换器,其上、下管或者同时采用超结功率MOSFET管,或者同时采用氮化镓GaN功率管。使用GaN功率管时,由于其各种寄生电容小,下管要求实现软开关所需要的激磁电流小,***的环流降低,因此可以减小由此在环路中产生的导通损耗以及变压器原边绕组的导通损耗;若输出采用同步整流,在原边和次级绕组换流过程中,变压器的原边电流下跌凹坑大,从而减小上管的导通损耗以及变压器原边绕组的导通损耗,提高整个效率,但是,使用GaN功率管,***的成本非常高。使用超结功率MOSFET管时,由于其各种寄生非线性特性,在低压的时候输出电容变得非常大,需要有更长的死区时间;在原边和次级绕组换流过程中,变压器的原边电流下跌凹坑小,从而降低***效率,但是,使用超结功率MOSFET管,***的成本非常低。可以看到,这二种结构并不优化。
发明内容
为了克服上面的问题,本发明专利提供一种上管使用超结功率MOSFET管,下管使用GaN功率管的非对称有源钳位反激变换器。
本发明解决技术问题所采用的技术方案是:在原有的有源钳位反激变换器结构中,上管使用超结功率MOSFET管,下管使用GaN功率管。由于上管不在主功率回路中,可以使用比下管的导通电阻大得多的器件,使用更高的导通电阻,这样,其寄生电容更低,就可以减小原边和次级绕组换流过程中,原边电流下跌凹坑所产生的损耗。
本发明的有益的效果是:下管使用GaN功率管,充分发挥开关速度快,关断损耗小的特点;上管使用超结功率MOSFET管,减低成本。同时,由于上管使用更高导通电阻的器件,其寄生电容更小,从而减小原边电流下跌凹坑所产生的损耗。整个装置成本介于二者之间,又充分发挥二种器件的特性。
附图说明
下面结合附图和实施对本发明进一步说明:
图1是本发明的电路图
图1中,(1)是本发明输入电容,(2)是本发明的钳位电容,(3)是本发明上管、超结功率MOSFET管,(4)是本发明的变压器,(5)是本发明输出同步整流功率MOSFET管,(6)是本发明输出电容,(7)是本发明下管、氮化镓GaN功率管。
具体实施方式
(3)的漏极连接到(2)的一端,(2)连接到(1)的正极,(1)的负极接到输入地,(4)的原边绕组一端连接到(1)的正极。(3)的源极连接到(7)的漏极,同时连接到(4)的原边绕组另一端,(7)的源极连接到输入地。(4)的次级绕组一端连接到(6)的正极,(4)的次级绕组另一端连接到(5)的漏极,(5)的源极连接到输出地,(6)的负极连接到输出地。图1中,(5)放在输出的地端,也称为底端,(5)也可以放在输出端,也称为高端。
Claims (3)
1.一种非对称异型上、下管有源钳位反激变换器,其特征是有源钳位反激变换器的上、下管使用不同类型的器件和不同参数。
2.根据权利要求1所述的非对称异型上、下管有源钳位反激变换器,其特征是上管使用超结功率MOSFET管,下管使用GaN功率管。
3.根据权利要求1、权利要求2所述的非对称异型上、下管有源钳位反激变换器,其特征是上管使用导通电阻更高、寄生电容更低的器件。
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Cited By (1)
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CN111786564A (zh) * | 2020-07-15 | 2020-10-16 | 江苏能华微电子科技发展有限公司 | 一种高效率紧凑型快充电源 |
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US20180226895A1 (en) * | 2017-02-09 | 2018-08-09 | Delta Electronics, Inc. | Power converter and method of control thereof |
US20180294731A1 (en) * | 2017-04-10 | 2018-10-11 | Delta Electronics (Shanghai) Co., Ltd | Control device and control method |
CN109067181A (zh) * | 2018-07-18 | 2018-12-21 | 东南大学 | 有源钳位反激变换器的自适应同步整流控制***及控制方法 |
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- 2019-12-02 CN CN201911215419.8A patent/CN110912411A/zh active Pending
Patent Citations (8)
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CN1822483A (zh) * | 2005-11-28 | 2006-08-23 | 伊博电源(杭州)有限公司 | 一种三绕阻反激变换器同步整流管的自驱动电路 |
CN203800053U (zh) * | 2013-10-30 | 2014-08-27 | 英飞凌科技奥地利有限公司 | 半导体器件及包括该半导体器件的集成装置 |
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CN108352787A (zh) * | 2016-09-09 | 2018-07-31 | 纳维达斯半导体股份有限公司 | 反激变换器 |
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CN111786564A (zh) * | 2020-07-15 | 2020-10-16 | 江苏能华微电子科技发展有限公司 | 一种高效率紧凑型快充电源 |
CN111786564B (zh) * | 2020-07-15 | 2022-03-01 | 江苏能华微电子科技发展有限公司 | 一种高效率紧凑型快充电源 |
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