CN110911325B - Wafer conveying blade - Google Patents
Wafer conveying blade Download PDFInfo
- Publication number
- CN110911325B CN110911325B CN201911206763.0A CN201911206763A CN110911325B CN 110911325 B CN110911325 B CN 110911325B CN 201911206763 A CN201911206763 A CN 201911206763A CN 110911325 B CN110911325 B CN 110911325B
- Authority
- CN
- China
- Prior art keywords
- branch
- wafer
- base
- intersection
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005452 bending Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims description 25
- 230000007704 transition Effects 0.000 claims description 18
- 230000007423 decrease Effects 0.000 claims description 4
- 239000002245 particle Substances 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 131
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000000725 suspension Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
Abstract
The invention relates to a wafer transfer blade comprising: a base, a first branch, a second branch, a third branch, and a fourth branch, wherein the first branch extends from a first location of the base in a first direction away from the base; the second branch extends from the second part of the base part to a second direction far away from the base part, and the extending end of the first branch is intersected with the extending end of the second branch; the first direction is different from the second direction; the third branch extends from the intersection of the second branch and the first branch in a third direction away from the base; the fourth branch extends from the intersection of the second branch and the first branch in a fourth direction away from the base. The wafer conveying blade can enable the conveying blade to be in contact with the area with the minimum bending deformation degree of the wafer, so that the area with the larger bending deformation degree of the wafer is in a suspended state, the contact area between the wafer and the conveying blade when the bending deformation occurs is reduced, particles and scratches on the surface of the wafer are reduced, and the yield of the wafer is greatly improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing equipment, and particularly relates to a wafer conveying blade.
Background
In the manufacture of semiconductor devices, semiconductor wafers are introduced into and removed from various processing chambers. Since various processes are required for manufacturing a semiconductor device in a plurality of processing chambers, the transfer/taking of semiconductor wafers in the respective processing chambers is performed by means of a dedicated wafer transfer apparatus.
During the epitaxial production process, the (100) plane silicon wafer 1 is vapor grown in an epitaxial process chamber. Referring to fig. 1, fig. 1 is a schematic structural diagram of an epitaxial growth process chamber provided in the prior art; in fig. 1, a <010> crystal orientation is adopted in the groove direction of a (100) plane silicon wafer 1, and a base 2 provides a supporting function for the growth process of the silicon wafer 1; the top bell jar 3 and the bottom bell jar 4 provide a proper closed environment for the growth of the silicon wafer 1; wafer lift pins 5 are capable of placing silicon wafer 1 from the transfer blade onto susceptor 2; the lamp module 6 is a heating device for silicon wafer growth. Referring to fig. 2, fig. 2 is a schematic diagram of a structure of a conventional transfer blade 7 for transferring wafers according to the prior art; in fig. 2, the transfer direction (arrow direction) of the transfer blade 7 coincides with the groove direction <010>, the hatched portion is the contact area of the silicon wafer 1 and the transfer blade 7, and the portion of the silicon wafer 1 not contacting the transfer blade 7 is in a floating state.
However, when the silicon wafer 1 is transferred to the process chamber along with the transfer blade 7, the silicon wafer 1 is transferred from the space having a low temperature to the process chamber having a high temperature, and the silicon wafer 1 is thermally deformed due to the sudden increase of the temperature, so that the bending phenomenon occurs. The silicon wafer 1 moves on the surface of the transfer blade 7 during bending and rubs against the transfer blade 7, so that more particles and scratches are generated on the surface of the silicon wafer 1, and the yield of the silicon wafer 1 is reduced.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a wafer transfer blade. The technical problems to be solved by the invention are realized by the following technical scheme:
the embodiment of the invention provides a wafer conveying blade, which comprises the following components: a base, a first branch, a second branch, a third branch, and a fourth branch, wherein,
the first branch extends from a first location of the base portion in a first direction away from the base portion;
the second branch extends from a second position of the base part to a second direction far away from the base part, and the extending end of the first branch is intersected with the extending end of the second branch;
the first direction is different from the second direction;
the third branch extending from the intersection of the first and second branches in a third direction away from the base;
the fourth branch extends from an intersection of the first branch and the second branch in a fourth direction away from the base.
In one embodiment of the invention, the first and second branches are symmetrically distributed along an axis of symmetry of the base.
In one embodiment of the invention, the third and fourth branches are symmetrically distributed along an axis of symmetry of the base.
In one embodiment of the invention, the third branch extends in the second direction from the intersection of the second branch and the first branch, and the fourth branch extends in the first direction from the intersection of the second branch and the first branch.
In one embodiment of the present invention, the width between the inner edge and the outer edge of the first branch is gradually increased along with the extending direction thereof, the width between the inner edge and the outer edge of the second branch is gradually increased along with the extending direction thereof, the width between the inner edge and the outer edge of the third branch is gradually decreased along with the extending direction thereof, and the width between the inner edge and the outer edge of the fourth branch is gradually decreased along with the extending direction thereof.
In one embodiment of the present invention, the width of the end of the first branch away from the intersection of the second branch and the first branch, the width of the end of the second branch away from the intersection of the second branch and the first branch, the width of the end of the third branch away from the intersection of the second branch and the first branch, and the width of the end of the fourth branch away from the intersection of the second branch and the first branch are all 25 to 40mm.
In one embodiment of the invention, the length of the first branch, the length of the second branch, the length of the third branch and the length of the fourth branch are all equal.
In one embodiment of the invention, the angle between the inner edge of the first branch and the inner edge of the second branch is 40-50 °.
In one embodiment of the invention, the device further comprises a transition portion disposed at the intersection of the first branch, the second branch, the third branch and the fourth branch.
In one embodiment of the invention, the width of the transition is 45-65 mm.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the wafer conveying blade is designed to be of a structure with four branches, and the four branches are combined to enable the conveying blade to be in contact with the area with the smallest bending deformation degree of the wafer, so that the area with the larger bending deformation degree of the wafer is in a suspended state, the contact area between the wafer and the conveying blade when the wafer is subjected to bending deformation is reduced, particles and scratches on the surface of the wafer are reduced, and the yield of the wafer is greatly improved.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial growth process chamber provided in the prior art;
FIG. 2 is a schematic diagram of a prior art trapezoidal transfer blade for transferring wafers;
FIG. 3 is a schematic view of a prior art wafer bending deformation on a trapezoidal transfer blade;
FIG. 4 is a schematic view of a first wafer transfer blade according to an embodiment of the present invention;
FIG. 5 is a schematic view of a second wafer transfer blade according to an embodiment of the present invention;
FIG. 6 is a schematic view of a third wafer transfer blade according to an embodiment of the present invention;
FIG. 7 is a schematic view of a fourth wafer transfer blade according to an embodiment of the present invention;
FIG. 8 is a schematic view of a fifth wafer transfer blade according to an embodiment of the present invention;
fig. 9 a-9 b are schematic diagrams illustrating bending deformation of a silicon wafer on a transfer blade according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Referring to fig. 2 and 3, fig. 3 is a schematic diagram of bending deformation of a wafer on a trapezoidal transfer blade according to the prior art. The Up region and Down region in FIG. 3 are regions with the greatest degree of wafer bending; the Up area is the peak position and represents the area with the largest upward bending degree of the wafer; the Down area is the trough position and represents the area where the wafer is bent Down to the greatest extent. As can be seen from fig. 2 and 3, the edges of the trapezoidal transfer blade will contact the trough position before the wafer is deformed, and the peak position is on the trapezoidal transfer blade; when the wafer is subjected to bending deformation, friction is generated between the bending deformation area and the trapezoid conveying blade; the peak position and the trough position of the wafer have relatively more friction with the trapezoidal conveying blade due to the larger bending deformation degree, and particularly have the most friction with the trapezoidal conveying blade at the trough position which is bent downwards, so that the particles and scratches at the position are the most.
Based on the rule that the wafer is bent and deformed on the trapezoid conveying blade, the wafer conveying blade is designed to avoid contact with a position, particularly a trough position, where the wafer is bent and deformed greatly as much as possible, and particles and scratches on the surface of the wafer are reduced by reducing the contact area between the wafer and the conveying blade.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a first wafer transfer blade according to an embodiment of the invention. The wafer transfer blade includes a base 10, a first branch 20, a second branch 30, a third branch 40, and a fourth branch 50. Wherein the first branch 20 extends from a first location of the base 10 in a first direction away from the base 10; the second branch 30 extends from the second portion of the base 10 in a second direction away from the base 10, and the extending end of the first branch 20 intersects with the extending end of the second branch 30, the first direction being different from the second direction; the third branch 40 extends from the intersection of the first branch 20 and the second branch 30 in a third direction away from the base 10; the fourth branch 50 extends from the intersection of the first branch 20 and the second branch 30 in a fourth direction away from the base 10.
Since the third and fourth branches 40 and 50 extend from the intersection of the first and second branches 20 and 30 and the first direction is different from the second direction, the four branches of the wafer transfer blade form an "X" or "X-like shape. That is, a line l parallel to the outer edge 12 is taken at the intersection of the first branch 20 and the second branch 30 1 The straight line l 1 The area where the four branches are located is divided into an area close to the base 10 and an area distant from the base 10, the first branch 20, the second branch 30 being in the area close to the base 10, the third branch 40 and the fourth branch 50 being in the area distant from the base 10.
In one particular embodiment, the base 10, the first branch 20, the second branch 30, the third branch 40, and the fourth branch 50 may be fabricated to form a unitary blade. In other embodiments, the base 10, the first branch 20, the second branch 30, the third branch 40 and the fourth branch 50 may also be separate components, and the components are connected and assembled to form a whole blade.
The first portion and the second portion refer to two positions located at the same edge of the base 10 and spaced apart from each other by a certain distance, for example, in the present embodiment, the first portion and the second portion of the base 10 are located at the inner edge 11 of the base 10.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a second wafer transfer blade according to an embodiment of the present invention, the first branch 20 may extend from an outer position of the inner edge 11 or may extend from an inner position of the inner edge 11, and the second branch 30 may extend from an outer position of the inner edge 11 or may extend from an inner position of the inner edge 11. The first branch 20 in fig. 5 extends from an outer position of the inner edge 11, i.e. the first location is located at an outer position of the inner edge 11, and the second branch 30 extends from an inner position of the inner edge 11, i.e. the second location is located at an inner position of the inner edge 11.
In this embodiment, the direction away from the base 10 includes any direction that is in the same plane as the base 10 and faces away from the outer edge 12 of the base 10, including a direction perpendicular to the outer edge 12 and a direction forming an angle with the outer edge 12. Taking the first direction perpendicular to the outer edge 12 as an example, the second direction is different from the first direction, and therefore, the second direction forms a certain angle with the outer edge 12. The third direction may be perpendicular to the outer edge 12, or may form an angle with the outer edge 12; the fourth direction may be perpendicular to the outer edge 12 or may form an angle with the outer edge 12. The third direction and the fourth direction may be the same or different.
Referring to fig. 6, fig. 6 is a schematic structural diagram of a third wafer transfer blade according to an embodiment of the present invention, in fig. 6, an outer edge 12 of a uniform base 10 of a first branch 20, a second branch 30, a third branch 40, and a fourth branch 50 forms an included angle, and an included angle between an outer edge 42 of the third branch 40 and an outer edge 52 of the fourth branch 50 is 90 °; i.e. the first, second, third and fourth directions all form an angle with the outer edge 12, and the third direction is different from the fourth direction.
When the wafer conveying blade is adopted to convey the wafer, according to the <011> crystal orientation and the <010> crystal orientation of the wafer, a certain <011> crystal position which is easy to bend downwards is in a suspension state, and the <011> crystal orientation position opposite to the <011> crystal orientation is ensured to be in the suspension state, and then the wafer is conveyed; when the conveying blades convey the wafer into the epitaxial growth process chamber, the position, which is easy to bend downwards, is in a suspended state and is not contacted with the conveying blades, so that friction is not generated between the position, which is easy to bend downwards, of the wafer and the conveying blades, particles and scratches on the surface of the wafer are reduced, and the yield of the wafer is improved.
Referring to fig. 4 and fig. 7, fig. 7 is a schematic structural diagram of a fourth wafer transfer blade according to an embodiment of the invention. For the lengths of the four branches, the lengths of the first branch 20, the second branch 30, the third branch 40, and the fourth branch 50 may be the same, or may be different, or may have the same lengths of two branches, or may have the same lengths of three branches. That is, the intersection of the first and second branches 20, 30 may have a short distance from the base 10 as shown in fig. 7, or may have a longer distance from the base 10 as shown in fig. 4; the intersection of the first branch 20 or the second branch 30 may be located at an axis of symmetry l of the base 10 perpendicular to the outer edge 12 2 On, or in the symmetry axis l 2 Either side of (3). Preferably, the lengths of the four branches are the same, the same length can ensure that the junction of the four branches is positioned at the center of the wafer, the center of the wafer is not easy to bend and deform, friction is not easy to generate between the wafer and the conveying blade, and therefore defects such as particles and scratches on the wafer can be reduced.
Further, the first and second branches 20, 30 may be along an axis of symmetry l 2 Symmetrically distributed, please refer to fig. 4; may also be along the symmetry axis l 2 Asymmetric distribution, see fig. 5. The third branch 40 and the fourth branch 50 may be along the symmetry axis l 2 Symmetrically distributed, please refer to fig. 4; may also be along the symmetry axis l 2 Asymmetric distribution, see fig. 6. Preferably, the first branch 20 and the second branch 30 are along the symmetry axis l, since the peak positions and the valley positions of the wafer are sequentially alternating and the distances and angles between adjacent peak positions and valley positions are equal 2 Symmetrically distributed, and the third branch 40 and the fourth branch 50 are along the alignment axis l 2 Symmetrically distributed so that the transfer blade can avoid not only the downward bending deformation position of the wafer but also the upward bending deformation position of the wafer when the transfer blade transfers the wafer, thereby enabling the transfer blade to be in contact with the position between the downward bending deformation area and the upward bending deformation area, wherein the wafer bending deformation degree is at the positionMinimal, and therefore less, relative friction with the transfer blade occurs, thereby reducing the occurrence of defects such as particles and scratches on the wafer.
Further, referring to fig. 4, the first branch 20 and the third branch 40 are along a straight line l 1 Symmetrically distributed, and the second branch 30 and the fourth branch 50 are also along the straight line l 1 A symmetrical distribution, i.e. the third branch 40 extends in the second direction from the intersection of the second branch 30 and the first branch 20, and the fourth branch 50 extends in the first direction from the intersection of the second branch 30 and the first branch 20; that is, the third direction coincides with the second direction and the fourth direction coincides with the first direction, so that the four branches form a central symmetry. The four branches are arranged to be symmetrical in center, when the wafer is placed, the positions of the wafer, which are easy to bend and deform upwards and easy to bend and deform downwards, are suspended, and the rest positions, which are easy to bend and deform, are suspended along with the positions; for example, the wafer may be oriented while it is being placed<010>Is placed between the third branch 40 and the fourth branch 50 while allowing a crystal orientation that is prone to bending deformation downward<011>The position is suspended, and the position of the wafer which is easy to generate bending deformation is centrosymmetric, and the center of the conveying blade is symmetrical, therefore, when the wafer is oriented<010>And crystal orientation<011>When the positions are suspended, the rest crystal directions<010>And crystal orientation<011>The position is also in the unsettled state, is favorable to carrying out accurate quick location to the wafer, shortens the time of placing the wafer, and then improves conveying blade's conveying efficiency, reduces the area of contact of its deformation position and conveying blade when the wafer takes place bending deformation simultaneously, reduces the production of defects such as granule and mar on the wafer.
For the width d of the four branches, the width d of each branch can be gradually changed (i.e. gradually increased or gradually decreased) along the extending direction of the branch, or can be kept unchanged (i.e. equal width) along the extending direction of the branch; if four branches of equal width are used for the transfer blade, the width d of each branch may be 25-40 mm, as shown in fig. 4. Preferably, the width of the end of each branch contacting the wafer edge is smaller than the width of the end thereof contacting the wafer center, i.e. the width between the inner edge 21 and the outer edge 22 of the first branch 20 gradually increases with the direction of extension thereof, the width between the inner edge 31 and the outer edge 32 of the second branch 30 gradually increases with the direction of extension thereof, the width between the inner edge 41 and the outer edge 42 of the third branch 40 gradually decreases with the direction of extension thereof, and the width between the inner edge 51 and the outer edge 52 of the fourth branch 50 gradually decreases with the direction of extension thereof; further, the width of the end of each branch that contacts the wafer edge (i.e., the end that is distal from the intersection of the four branches) is 25-40 mm. Because the position of the wafer which is easy to bend and deform is positioned at the edge of the wafer, the width of the end part of each branch, which is contacted with the edge of the wafer, is smaller than the width of the end part of each branch, which is contacted with the center of the wafer, so that the contact area between the deformed part of the wafer and the conveying blade when the wafer bends and deforms can be reduced to the greatest extent, the friction between the wafer and the conveying blade is further reduced, and the defects such as particles and scratches on the wafer are reduced.
Further, referring to fig. 2 and 4, in this embodiment, the epitaxial growth process chamber is further provided with 3 wafer lifting pins 5 at the position where the wafer is placed, and the included angles formed by two adjacent wafer lifting pins 5 and the center of the wafer are all 120 °. Therefore, in order to ensure that the transfer blade does not collide with the wafer lift pins 5 during the transfer and that the wafer lift pins 5 do not contact the transfer blade during the up-and-down movement, it is preferable to set the angle θ between the inner edge 21 of the first branch 20 and the inner edge 31 of the second branch 30 to 40 to 50 °.
Further, referring to fig. 8 and fig. 9 a-9 b, fig. 8 is a schematic structural diagram of a fifth wafer transfer blade according to an embodiment of the present invention, and fig. 9 a-9 b are schematic diagrams of bending deformation of a silicon wafer on the transfer blade according to an embodiment of the present invention, wherein fig. 9a is a top view and fig. 9b is a side view. A transition 60 is provided at the junction of the first branch 20, the second branch 30, the third branch 40, the fourth branch 50. The extending ends of the first and second branches 20 and 30 may intersect first and then continue to extend through the transition portion 60, and the third and fourth branches 40 and 50 extend from the extending ends of the transition portion 60, so that the intersection point of the first and second branches 20 and 30 is located at the side of the transition portion 60, as shown in fig. 9 a. The first, second, third and fourth branches 20, 30, 40, 50 may also intersect first and then the transition 60 overlays the intersection so that the intersection of the first branch 20 and the second branch 30 is located in the transition 60, as shown in fig. 8. Similarly, the location at which the third branch 40 and the transition 60 intersect may or may not be the same as the location at which the fourth branch 50 and the transition 60 intersect. The transition portion 60 is arranged on the basis of avoiding friction caused by contact between the edge of the wafer which is easy to deform and the blade, so that the contact area of the transfer blade at the center of the wafer can be increased, the supporting force of the transfer blade to the wafer is further improved, and the stability during transfer is improved.
The shape of the transition portion 60 includes, but is not limited to, rectangular, circular, trapezoidal, triangular, etc., and the present embodiment is not further limited. The width w of the transition 60 is preferably smaller than the width of the base 10, which may range from 45 to 65mm, to avoid collision between the blade and the lift pin during transport and during lifting. Further, the width of the transition portion 60 is not limited to the above parameters, and may be determined according to the structure of the epitaxial growth process chamber in practical use. The width of the transition portion 60 refers to the maximum distance in the direction parallel to the outer edge 12 of the base portion 10.
Referring to fig. 9 a-9 b, the shaded portion in fig. 9a is the contact portion of the silicon wafer 1 with the transfer blade. Taking four branches as center symmetry, having equal width, and forming an included angle of 45 degrees between the inner edge 21 of the first branch 20 and the inner edge 31 of the second branch 30, and providing a wafer transfer blade of the transition portion 60 to transfer a silicon wafer 1 having a diameter of 300mm as an example, first, a groove <010> crystal orientation of the silicon wafer 1 is kept consistent with a transfer direction of the transfer blade so that the four branches are located at intermediate positions of the upward bending and downward bending regions, the silicon wafer is placed on the transfer blade and transferred into an epitaxial growth process chamber, and when entering the process chamber, the silicon wafer is heated to undergo bending deformation. As can be seen from fig. 9a and 9b, the Up region and the Down region of the silicon wafer 1, where the bending deformation is greatest, are in a suspended state, and are not in contact with the transfer blade, and the region of the transfer blade in contact with the silicon wafer 1 is the region where the bending deformation is smallest; moreover, the 3 wafer lift pins 5 do not collide with the transfer blade during the transfer of the silicon wafer 1 by the transfer blade and during the lift pins 5 lift the silicon wafer 1. Therefore, the region with the largest bending deformation degree of the silicon wafer 1 can not rub the conveying blade, and the defects of particles, scratches and the like are avoided; the area where the silicon wafer 1 contacts the transfer blade is the position where the bending deformation degree of the silicon wafer 1 is minimum, and friction generated between the position and the transfer blade is less, so that particles and scratches generated on the silicon wafer are reduced.
Further, referring to fig. 4 and 9b, the inner edge 11 side of the base 10 has a positioning portion 13 protruding relative to the first and second branches 20 and 30, and the extension end of the third branch 40 is provided with a positioning portion 43, and the extension end of the fourth branch 50 is provided with a positioning portion 53, which together form a shape matching the shape of the wafer for placing the wafer.
According to the invention, the wafer conveying blade is designed to have the structures of the first branch 20, the second branch 30, the third branch 40 and the fourth branch 50, and the four branches can avoid the area with the largest bending deformation degree of the wafer and only contact with the area with the smallest bending deformation degree of the wafer, so that the area with the larger bending deformation degree of the wafer is in a suspended state, the contact area between the wafer and the conveying blade when the bending deformation occurs is reduced, the generation of particles and scratches on the surface of the wafer is reduced, and the yield of the wafer is greatly improved. On the other hand, the contact area between the wafer and the conveying blade is reduced, so that the pollution caused by the contact of the wafer and the blade is also reduced, and the yield of the wafer is further improved.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. The wafer conveying method is characterized in that the wafer conveying method utilizes a wafer conveying blade to convey a wafer into an epitaxial growth process chamber, the wafer is heated to generate bending deformation, and the wafer conveying blade comprises: a base, a first branch, a second branch, a third branch, and a fourth branch, wherein,
the first branch extends from a first location of the base portion in a first direction away from the base portion;
the second branch extends from a second position of the base part to a second direction far away from the base part, and the extending end of the first branch is intersected with the extending end of the second branch;
the first direction is different from the second direction;
the third branch extending from the intersection of the first and second branches in a third direction away from the base;
the fourth branch extending from the intersection of the first and second branches in a fourth direction away from the base,
the wafer transfer blade is configured such that, when a deformation occurs during a process in which a wafer is transferred, an area where the wafer is bent upward to the greatest extent and an area where the wafer is bent downward to the greatest extent are not in contact with the wafer transfer blade.
2. The wafer transfer method of claim 1, wherein the first branch and the second branch are symmetrically distributed along an axis of symmetry of the base.
3. The wafer transfer method of claim 1 or 2, wherein the third branch and the fourth branch are symmetrically distributed along an axis of symmetry of the base.
4. The wafer transfer method of claim 3, wherein the third branch extends in the second direction from an intersection of the second branch and the first branch, and the fourth branch extends in the first direction from an intersection of the second branch and the first branch.
5. The wafer transfer method of claim 1, wherein a width between an inner edge and an outer edge of the first branch increases gradually with a direction of extension thereof, a width between an inner edge and an outer edge of the second branch increases gradually with a direction of extension thereof, a width between an inner edge and an outer edge of the third branch decreases gradually with a direction of extension thereof, and a width between an inner edge and an outer edge of the fourth branch decreases gradually with a direction of extension thereof.
6. The wafer transfer method of claim 5, wherein a width of an end of the first branch away from an intersection of the second branch and the first branch, a width of an end of the second branch away from an intersection of the second branch and the first branch, a width of an end of the third branch away from an intersection of the second branch and the first branch, and a width of an end of the fourth branch away from an intersection of the second branch and the first branch are each 25-40 mm.
7. The wafer transfer method of claim 1, wherein a length of the first branch, a length of the second branch, a length of the third branch, and a length of the fourth branch are all equal.
8. The wafer transfer method of claim 1, wherein an angle between an inner edge of the first branch and an inner edge of the second branch is 40 ° to 50 °.
9. The wafer transfer method of claim 1, further comprising a transition disposed at an intersection of the first branch, the second branch, the third branch, and the fourth branch.
10. The wafer transfer method of claim 9, wherein the transition portion has a width of 45-65 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911206763.0A CN110911325B (en) | 2019-11-29 | 2019-11-29 | Wafer conveying blade |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911206763.0A CN110911325B (en) | 2019-11-29 | 2019-11-29 | Wafer conveying blade |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110911325A CN110911325A (en) | 2020-03-24 |
| CN110911325B true CN110911325B (en) | 2024-03-26 |
Family
ID=69820936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911206763.0A Active CN110911325B (en) | 2019-11-29 | 2019-11-29 | Wafer conveying blade |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110911325B (en) |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4586743A (en) * | 1984-09-24 | 1986-05-06 | Intelledex Incorporated | Robotic gripper for disk-shaped objects |
| JPH1154598A (en) * | 1997-08-06 | 1999-02-26 | Kokusai Electric Co Ltd | Wafer susceptor |
| JPH11106293A (en) * | 1997-10-03 | 1999-04-20 | Super Silicon Kenkyusho:Kk | Production of epitaxial wafer and apparatus therefor |
| TW381985B (en) * | 1996-11-26 | 2000-02-11 | Tokyo Electron Ltd | Transfer arm apparatus and semiconductor processing system using the same |
| TW390832B (en) * | 1997-02-14 | 2000-05-21 | Applied Materials Inc | Clamp wrist, claming mechanism, robot arm assembly, robot and method for transferring a workpiece |
| TW464592B (en) * | 1999-02-17 | 2001-11-21 | Pri Automation Inc | Gripping device for gripping an object having a handle with a flange on an upper surface thereof, and method of engaging a payload |
| KR20020090493A (en) * | 2001-05-28 | 2002-12-05 | 삼성전자 주식회사 | Cross arm of wafer lift apparatus |
| TW519509B (en) * | 2002-08-30 | 2003-02-01 | Applied Materials Inc | A robot blade for silicon wafer transportation |
| JP3109624U (en) * | 2005-01-04 | 2005-05-19 | 有限会社旭電研 | Robot hand for transfer |
| JP2005285823A (en) * | 2004-03-26 | 2005-10-13 | Fujitsu Display Technologies Corp | Substrate transport device |
| JP2007059740A (en) * | 2005-08-26 | 2007-03-08 | Sumco Corp | Method of manufacturing silicon wafer |
| KR20070031609A (en) * | 2005-09-15 | 2007-03-20 | 삼성전자주식회사 | Apparatus of transferring wafers |
| CN202259225U (en) * | 2011-10-09 | 2012-05-30 | 北京京东方光电科技有限公司 | Mechanical arm for delivery of substrate |
| TW201535577A (en) * | 2013-10-08 | 2015-09-16 | Rudolph Technologies Germany Gmbh | Holding and turning device for flat objects |
| JP2016047589A (en) * | 2014-08-28 | 2016-04-07 | トヨタ自動車株式会社 | Robot hand |
| CN105609461A (en) * | 2014-11-14 | 2016-05-25 | 株式会社荏原制作所 | Substrate holding apparatus |
| CN207489817U (en) * | 2017-11-08 | 2018-06-12 | 上海华力微电子有限公司 | A kind of device for the Transport disc service life for promoting chemical vapor deposition method equipment |
| CN207517655U (en) * | 2017-09-26 | 2018-06-19 | 珠海格力电器股份有限公司 | A kind of silicon chip |
| TWI639189B (en) * | 2017-09-07 | 2018-10-21 | 大陸商上海新昇半導體科技有限公司 | Edge position controller for a wafer |
| CN208111470U (en) * | 2018-05-17 | 2018-11-16 | 苏州阿特斯阳光电力科技有限公司 | A kind of biography sheet devices and solar battery system of processing |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8792084B2 (en) * | 2009-05-20 | 2014-07-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US10399231B2 (en) * | 2017-05-22 | 2019-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate handling contacts and methods |
-
2019
- 2019-11-29 CN CN201911206763.0A patent/CN110911325B/en active Active
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4586743A (en) * | 1984-09-24 | 1986-05-06 | Intelledex Incorporated | Robotic gripper for disk-shaped objects |
| TW381985B (en) * | 1996-11-26 | 2000-02-11 | Tokyo Electron Ltd | Transfer arm apparatus and semiconductor processing system using the same |
| TW390832B (en) * | 1997-02-14 | 2000-05-21 | Applied Materials Inc | Clamp wrist, claming mechanism, robot arm assembly, robot and method for transferring a workpiece |
| JPH1154598A (en) * | 1997-08-06 | 1999-02-26 | Kokusai Electric Co Ltd | Wafer susceptor |
| JPH11106293A (en) * | 1997-10-03 | 1999-04-20 | Super Silicon Kenkyusho:Kk | Production of epitaxial wafer and apparatus therefor |
| TW464592B (en) * | 1999-02-17 | 2001-11-21 | Pri Automation Inc | Gripping device for gripping an object having a handle with a flange on an upper surface thereof, and method of engaging a payload |
| KR20020090493A (en) * | 2001-05-28 | 2002-12-05 | 삼성전자 주식회사 | Cross arm of wafer lift apparatus |
| TW519509B (en) * | 2002-08-30 | 2003-02-01 | Applied Materials Inc | A robot blade for silicon wafer transportation |
| JP2005285823A (en) * | 2004-03-26 | 2005-10-13 | Fujitsu Display Technologies Corp | Substrate transport device |
| JP3109624U (en) * | 2005-01-04 | 2005-05-19 | 有限会社旭電研 | Robot hand for transfer |
| JP2007059740A (en) * | 2005-08-26 | 2007-03-08 | Sumco Corp | Method of manufacturing silicon wafer |
| KR20070031609A (en) * | 2005-09-15 | 2007-03-20 | 삼성전자주식회사 | Apparatus of transferring wafers |
| CN202259225U (en) * | 2011-10-09 | 2012-05-30 | 北京京东方光电科技有限公司 | Mechanical arm for delivery of substrate |
| TW201535577A (en) * | 2013-10-08 | 2015-09-16 | Rudolph Technologies Germany Gmbh | Holding and turning device for flat objects |
| JP2016047589A (en) * | 2014-08-28 | 2016-04-07 | トヨタ自動車株式会社 | Robot hand |
| CN105609461A (en) * | 2014-11-14 | 2016-05-25 | 株式会社荏原制作所 | Substrate holding apparatus |
| TWI639189B (en) * | 2017-09-07 | 2018-10-21 | 大陸商上海新昇半導體科技有限公司 | Edge position controller for a wafer |
| CN207517655U (en) * | 2017-09-26 | 2018-06-19 | 珠海格力电器股份有限公司 | A kind of silicon chip |
| CN207489817U (en) * | 2017-11-08 | 2018-06-12 | 上海华力微电子有限公司 | A kind of device for the Transport disc service life for promoting chemical vapor deposition method equipment |
| CN208111470U (en) * | 2018-05-17 | 2018-11-16 | 苏州阿特斯阳光电力科技有限公司 | A kind of biography sheet devices and solar battery system of processing |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110911325A (en) | 2020-03-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107112265B (en) | Substrate conveying mechanism | |
| CN105723504A (en) | Substrate support apparatus having reduced substrate particle generation | |
| US11721555B2 (en) | Method and system for thinning wafer thereof | |
| TW201110257A (en) | Processing chamber with translating wear plate for lift pin | |
| US7635241B2 (en) | Support platform of non-contact transfer apparatus | |
| US11427929B2 (en) | Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method | |
| US10770334B2 (en) | Substrate holding device | |
| US20230330864A1 (en) | Manipulator | |
| CN103765573A (en) | Susceptor | |
| CN110911325B (en) | Wafer conveying blade | |
| JP4797514B2 (en) | Silicon wafer manufacturing method | |
| US20170353994A1 (en) | Self-centering pedestal heater | |
| CN103824796A (en) | Graphite bearing disc for LED epitaxial process, and matching substrate thereof | |
| KR20130095495A (en) | Baot for loading semiconductor substrate | |
| CN216487983U (en) | Bearing assembly, wafer conveying device and wafer heat treatment equipment | |
| KR20210089761A (en) | A wafer transfer apparatus, a vapor phase growth apparatus, a wafer transfer method, and a manufacturing method of an epitaxial silicon wafer | |
| KR102477733B1 (en) | Substrate supporting device, substrate transporting robot and aligner device | |
| TWI717403B (en) | Wafer boat, annealing tool and anneling method | |
| KR20090068586A (en) | Wafer for chemical vapor deposition and method for fabricating the same | |
| JP2006321610A (en) | Carrying device | |
| TWI646573B (en) | Focusing ring and plasma processing device | |
| CN217651349U (en) | Graphite base for placing silicon substrate | |
| KR102413349B1 (en) | equipment for deposition thin film | |
| CN217809642U (en) | Wafer bearing disc | |
| KR101209882B1 (en) | Robot-arm |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210917 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |